JPS5893233A - Pattern matching apparatus with automatic focal plane alignment - Google Patents
Pattern matching apparatus with automatic focal plane alignmentInfo
- Publication number
- JPS5893233A JPS5893233A JP56190837A JP19083781A JPS5893233A JP S5893233 A JPS5893233 A JP S5893233A JP 56190837 A JP56190837 A JP 56190837A JP 19083781 A JP19083781 A JP 19083781A JP S5893233 A JPS5893233 A JP S5893233A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- mask
- optical system
- pattern
- focus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 238000001514 detection method Methods 0.000 description 5
- 241000257465 Echinoidea Species 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体製造設備の一つであり、半導体ウェハ
上に回路を作る際、マスクパターン像とウェハを整合さ
せる装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is one of semiconductor manufacturing equipment, and relates to an apparatus for aligning a mask pattern image with a wafer when forming a circuit on a semiconductor wafer.
半導体製造設備の一つであるプロジェクション方式のマ
スクパターンとウエノ・の整合装置において、ウェハ面
上をマスクパターンの結像位置に精度良く位置決めする
必要がある。In a projection-type mask pattern and wafer alignment device that is one of semiconductor manufacturing equipment, it is necessary to accurately position the image formation position of the mask pattern on the wafer surface.
第1図に従来のパターン整合装置の概略を示して説明す
る。FIG. 1 schematically shows and explains a conventional pattern matching device.
第1図において、光源4から出た光によって、マスク2
上に描かれた像は、投影光学系66′を経て設足位置5
で結像する。ウェハテーブル3を移動させることにより
ウェハlの上面を設だ位置5に合せ、マスクパターンを
ウェハIK転写していた。In FIG. 1, the light emitted from the light source 4 causes the mask 2 to
The image drawn above is transmitted to the foot position 5 through the projection optical system 66'.
to form an image. By moving the wafer table 3, the upper surface of the wafer 1 was aligned with the set position 5, and the mask pattern was transferred to the wafer by IK.
このような従来の装置では、マスク2および投影光学系
6,6の熱膨張等によりマスク投影像が結像する位置と
設定位置にズレを生じた場合にも、そのズレを補正する
ことが出来ないままにパターンの転写が行なわれ、焦点
のメした像が転写されていた。そのためにウェハ上の回
路に不良が生じ、製品歩留りの低下を招いていた。In such a conventional device, even if a deviation occurs between the position where the mask projection image is formed and the set position due to thermal expansion of the mask 2 and the projection optical systems 6, 6, the deviation cannot be corrected. The pattern was transferred while the pattern was not in focus, resulting in an out-of-focus image being transferred. This has caused defects in the circuits on the wafer, leading to a decrease in product yield.
本発明は、前記の如き従来技術を改善し、さらに精度の
高い位置決めを行なうことにより、製品の歩留り向上を
させることができるパターン整合装置を提供せんとする
ものである。The present invention aims to provide a pattern matching device that improves the conventional technology as described above and can improve the yield of products by performing more accurate positioning.
本発明は前記の目的を達成せんがため、つLハと投影光
学系との間に昇降自在の対物光学系を設け、その対物光
学系を通してつLハ上の投影像の焦点を検出する手段を
設け、かつ的記対物光学系とつ1ハとを一定の相対位置
に保って移動させ得る如く構成し、曲記対物光学系の焦
点検出手段の情報を元にしてウェハ上に投影される像の
焦点を合せる如くしたものである。In order to achieve the above-mentioned object, the present invention provides means for providing an objective optical system that can be raised and lowered between the L-shape and the projection optical system, and detecting the focal point of the projected image on the L-shape through the objective optical system. and is constructed so that the target optical system and the target optical system can be moved while maintaining a fixed relative position, and the image is projected onto the wafer based on information from the focus detection means of the target optical system. This is like focusing an image.
次に第2図により本発明の一実施例を説明する。Next, an embodiment of the present invention will be described with reference to FIG.
第2図において、1は転写されるウェハ、2はウェハ1
に転写するマスク、3は昇降自在のウェハテーブル、4
は光源、6.6は光源4からの光をマスク2を通して受
ける投影光学系で、これによりウェハ1が結像位置12
にあれば像として現れるが、ウェハlが他の位置にあれ
ばフォーカスの合はない像しか現れない。In FIG. 2, 1 is the wafer to be transferred, 2 is the wafer 1
3 is a wafer table that can be raised and lowered, 4
6 is a light source, and 6.6 is a projection optical system that receives light from the light source 4 through the mask 2, so that the wafer 1 is positioned at the imaging position 12.
If the wafer l is at any other position, it will appear as an image, but if the wafer l is at any other position, only an out-of-focus image will appear.
本発明においては、投影光学系″6′とウニ・・1との
間にハーフミラ−などからなる対物光学系7を設け、そ
の対物光学系7全通してつLハエ上に投影されるマスク
2の像の焦点を検出し得る焦点検出回路8と、その回路
8より情報を取り込み、これを元にして紡記対物光学系
7とウニ・・テーブル3とを上下に動作させる信号10
、11を出力する制御回路9より構成されていれ
まず投影光学系6.6を経たマスク2の投影像に結像面
位置12 VcつLハ面があれば、像として現れるが、
ウェハ面が他にあればフォーカスの合わない像しか現れ
ない。従って焦点検出回路8を作動させ乍ら、対物光学
系7金上下し、ウェハ1の像が最も鮮明になる位置に移
動させて焦点を合せる。この状態におけるウェハ1と対
物光学系7との相対位置関係を保ちなからウェハテーブ
ル3と対物光学系7を同時VC移動させ、前記と同様に
ウェハ1上の投影像が最も鮮明VCなる位置に停止させ
る。In the present invention, an objective optical system 7 consisting of a half mirror or the like is provided between the projection optical system ``6'' and the sea urchin 1, and a mask 2 is projected onto the L fly through the entire objective optical system 7. a focus detection circuit 8 capable of detecting the focal point of an image of
, 11. If the projected image of the mask 2 that has passed through the projection optical system 6.6 has an imaging plane position 12VcxLc plane, it will appear as an image.
If there is another wafer surface, only an out-of-focus image will appear. Therefore, while operating the focus detection circuit 8, the objective optical system 7 is moved up and down to a position where the image of the wafer 1 is the clearest and focused. While maintaining the relative positional relationship between the wafer 1 and the objective optical system 7 in this state, the wafer table 3 and the objective optical system 7 are simultaneously moved by VC to the position where the projected image on the wafer 1 is the clearest VC in the same way as above. make it stop.
こうすることによpウェハ1の面とマスク2の投影像面
とが完全に一致した形となり、マスク2の像は最も鮮明
な状態でウニ・−1上に投影される。By doing this, the surface of the p-wafer 1 and the projection image plane of the mask 2 are completely aligned, and the image of the mask 2 is projected onto the sea urchin-1 in the clearest state.
従って、投影光学系6.6とマスク2が温度変化しても
、結像面位置に正確にウェハ上面を合せることができ、
焦点ずれのないパターン転写をすることができる。Therefore, even if the temperature of the projection optical system 6.6 and the mask 2 changes, the top surface of the wafer can be accurately aligned with the image plane position.
It is possible to transfer patterns without defocusing.
以上述べた如く、本発明の自動焦点合せ付パターン整合
装置は、ウェハとその上方に位置する投影光学系との間
にハーフミラ−等からなる対物光学系と、その対物光学
系を通してウェハ上の焦点を検出する手段を用いてウニ
・・上の焦点を合せ、その状態における対物光学系とウ
ニ・・との相対位置を保ちながら移動させ、マスクに描
かれたパターンとウェハに投影されたマスクのパターン
ヲ焦点検出手段を用いて相互に位置合せすることにより
正確な転写をすることができ、製品の歩留りを向上させ
ることができる。As described above, the pattern matching device with automatic focusing of the present invention includes an objective optical system consisting of a half mirror or the like between the wafer and the projection optical system located above the wafer, and a focal point on the wafer through the objective optical system. A means for detecting the urchin is used to focus on the sea urchin, and the objective optical system is moved while maintaining the relative position of the urchin.The pattern drawn on the mask and the mask projected onto the wafer are then By aligning the patterns with each other using a focus detection means, accurate transfer can be performed and the yield of products can be improved.
第1図は従来のパターン整合装置の概要を示す説明図、
第2図は本発明を適用したパターン整合装置の一例を示
す説明図である。
1・・・つ1ハ、2・・・マスク、3・・・つ1ノ%
f −プル、4・・・光源、6,6′・・・投影光学系
、7・・・対物光学系、8・・・焦点検出回路、9・・
・制御回路、1o・・・ウェハテーブル作動信号、11
・・・対物光学系作動信号、12・・・結像面。
代理人 弁理士 秋 本 正 実第 j 図
j
第 2図FIG. 1 is an explanatory diagram showing an overview of a conventional pattern matching device;
FIG. 2 is an explanatory diagram showing an example of a pattern matching device to which the present invention is applied. 1... 1 ha, 2... mask, 3... 1 no%
f-pull, 4... Light source, 6, 6'... Projection optical system, 7... Objective optical system, 8... Focus detection circuit, 9...
- Control circuit, 1o... Wafer table operation signal, 11
...Objective optical system operation signal, 12...Imaging plane. Agent Patent Attorney Tadashi Akimoto Jichiji Figure j Figure 2
Claims (1)
いて、第2の試料と投影光学系との間に昇降自在の対物
光学系を設け、その対物光学系を通して第2の試料上の
投影像の焦点を検出する手段を設け、かつ前記対物光学
系と第2の試料とを一定の相対位置に保って移動書せ得
る如く構成し、前記対物光学系の焦点検出手段の情報を
元にして第2の試料上に投影される偉の焦点を合せる如
くなしたことを特徴とする自動焦点合せ付パターン整合
装置。In an apparatus for projecting and transferring an image of a first sample onto a second sample, an objective optical system that can be raised and lowered is provided between the second sample and the projection optical system, and an image of the first sample is transferred onto the second sample through the objective optical system. means for detecting the focal point of the projected image of the objective optical system and the second sample is configured to be movable while keeping the objective optical system and the second sample at a constant relative position; 1. A pattern matching device with automatic focusing, characterized in that the pattern matching device is configured to focus a pattern projected onto a second sample from the source.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56190837A JPS5893233A (en) | 1981-11-30 | 1981-11-30 | Pattern matching apparatus with automatic focal plane alignment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56190837A JPS5893233A (en) | 1981-11-30 | 1981-11-30 | Pattern matching apparatus with automatic focal plane alignment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5893233A true JPS5893233A (en) | 1983-06-02 |
Family
ID=16264584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56190837A Pending JPS5893233A (en) | 1981-11-30 | 1981-11-30 | Pattern matching apparatus with automatic focal plane alignment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5893233A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08102441A (en) * | 1995-07-28 | 1996-04-16 | Canon Inc | Projection exposure device |
JPH08102440A (en) * | 1995-07-28 | 1996-04-16 | Canon Inc | Projection exposure |
-
1981
- 1981-11-30 JP JP56190837A patent/JPS5893233A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08102441A (en) * | 1995-07-28 | 1996-04-16 | Canon Inc | Projection exposure device |
JPH08102440A (en) * | 1995-07-28 | 1996-04-16 | Canon Inc | Projection exposure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4538914A (en) | Transfer apparatus for compensating for a transfer error | |
US4617469A (en) | Exposure apparatus with detecting means insertable into an exposure path | |
JPH04181935A (en) | Optical device having automatic focus detecting means | |
US4669867A (en) | Alignment and exposure apparatus | |
WO2007079639A1 (en) | Ttl alignment system for projection exposure apparatus and alignment method | |
JPH10223525A (en) | Focus control method for aligner | |
JPS5893233A (en) | Pattern matching apparatus with automatic focal plane alignment | |
JPH051610B2 (en) | ||
JPS5919320A (en) | Optical system for detection | |
JPS6257008B2 (en) | ||
JP2006084783A (en) | Mask alignment method and mask alignment device for double-face exposure apparatus | |
JP2528790B2 (en) | Optical reproduction apparatus for two objects in different object planes | |
JP2986627B2 (en) | Alignment method of mask and work in proximity exposure apparatus | |
JPS6154622A (en) | Pattern transfer process and device and applicable prealigner and mask holder | |
JPS62200724A (en) | Projection and exposure device | |
JPH0267713A (en) | Multiple exposure process | |
JPS6135450A (en) | Method and device for projection exposure | |
JPH0521318A (en) | Autofocusing mechanism | |
JP2653356B2 (en) | Projection exposure method | |
JPS5875834A (en) | Mask alignment device | |
JPS60138926A (en) | Pattern transfer device | |
JPH0547635A (en) | Projection aligner | |
JPS61203640A (en) | Optical exposing apparatus | |
JPH0582410A (en) | Method for detecting image forming plane | |
JPS60216548A (en) | Lamellar article for exposure |