JPS5892247A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5892247A
JPS5892247A JP19352381A JP19352381A JPS5892247A JP S5892247 A JPS5892247 A JP S5892247A JP 19352381 A JP19352381 A JP 19352381A JP 19352381 A JP19352381 A JP 19352381A JP S5892247 A JPS5892247 A JP S5892247A
Authority
JP
Japan
Prior art keywords
heat
bimetal
semiconductor element
heat radiating
becomes large
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19352381A
Other languages
Japanese (ja)
Inventor
「あ」　一仁
Kazuhito To
Miyoshi Yoshida
吉田　美義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19352381A priority Critical patent/JPS5892247A/en
Publication of JPS5892247A publication Critical patent/JPS5892247A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Abstract

PURPOSE:To allow heat radiation of semiconductor elements with different calorific powers by using the same heat radiating mechanism by a method wherein a part of a heat radiating path is constituted of a bimetal resulting in the control of heat radiating amounts. CONSTITUTION:When the semiconductor element 3 is operated, a part of generated heat escapes out to a multi-layer ceramic substrate 1 through solder balls 2, but most of heat is transferred from a part of the bimetal 7 through an arm 6 to a heat radiating fin 4 and emitted. When heat generation becomes large, the heat transferred to the bimetal 7 also becomes large, therefore the curve of the bimetal 7 becomes small, and accordingly the contact area with the semiconductor element 3 becomes large. Thereby, the area of the heat transfer path from the semiconductor element 3 through the bimetal 7 and the arm 6 to the heat radiating fin 4 increases resulting in the increase of heat radiating amounts. If the semiconductor element 3 is overcooled, the curve of the bimetal 7 becomes large, and the contact area with the semiconductor element 3 reduces. Therefore, the heat radiating amount reduces.

Description

【発明の詳細な説明】 この発明は半導体素子から発生する熱を放熱フィンによ
って放熱する半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device in which heat generated from a semiconductor element is radiated by heat radiating fins.

＄１１Ｉｉ！１は従来の半導体装置を示す概略断面側面
図である。同図において、＜１３Ｆｉ多層セラミック基
板、（２ｊは半田ボール、（３Ｊは表面を下向きにして
、この半田ポール（２』によって前記多層セラミック基
板（１）にボンディングされている半導体系子、（４）
は前記多層セラミック基鈑（１）にハーメチックシール
されている放熱フィン、（５）は一端がこの放熱フィン
（４）κ取シ付けられ、他端が前記半導体素子（３）の
裏面に圧接されたリーフスプリングである。$11Ii! 1 is a schematic cross-sectional side view showing a conventional semiconductor device. In the same figure, a <13Fi multilayer ceramic substrate, (2j is a solder ball, (3J is a semiconductor device bonded to the multilayer ceramic substrate (1) with its surface facing downward with the solder pole (2), (4) )
is a heat dissipation fin (5) hermetically sealed to the multilayer ceramic substrate (1); one end of the heat dissipation fin (4) is attached to the heat dissipation fin (4); It is a leaf spring.

次に、上記構成による半導体装置の放熱動作について説
明する。まず、半導体素子（３）が作動すると、熱が発
生する。この熱の一部／ｒｉ牛田ボール（２）を通じて
多層セラミック基板（１）に逃けるが、大部分の熱はリ
ーフスプリング（５）ヲ通じて放熱フィン（４）に伝わ
シ放熱する。Next, the heat dissipation operation of the semiconductor device with the above configuration will be explained. First, when the semiconductor element (3) operates, heat is generated. A part of this heat escapes to the multilayer ceramic substrate (1) through the Ushida balls (2), but most of the heat is transmitted to the heat dissipation fins (4) through the leaf springs (5) and is radiated.

しかしながら、従来の半導体装置は前記したように、そ
の放熱量が一定である。このため、多数の牛導体装ｔｔ
−同一の放熱機構で放熱すると、各半導体素子の発熱量
の多少によって、各半導体装置に放熱量が異なるものが
出てくるなどの欠点があった。However, as described above, the amount of heat dissipated by conventional semiconductor devices is constant. For this reason, a large number of cow conductor installations tt
- When heat is radiated using the same heat radiating mechanism, there is a drawback that each semiconductor device has a different amount of heat radiated depending on the amount of heat generated by each semiconductor element.

したがって、この発明の目的は半導体末子の発熱量の多
少によって、その放熱量を制御することができる半導体
装置な提供するものである。Therefore, an object of the present invention is to provide a semiconductor device in which the amount of heat dissipated can be controlled depending on the amount of heat generated by the semiconductor terminal.

このような目的全達成するため、この発明は放熱経路の
一部をバイメタルで構成し、半導体素子から発生する発
熱の大小によって、このバイメタルの半導体素子との接
触面積が変わり、放熱量を１１１１１１するものであシ
、以下実施例を用いて詳細に説明する。In order to achieve all of these objectives, the present invention configures a part of the heat dissipation path with a bimetal, and the contact area of the bimetal with the semiconductor element changes depending on the amount of heat generated from the semiconductor element, increasing the amount of heat dissipation to 111111. This will be explained in detail below using examples.

第２図はこの発明に係る半導体装置の一実施例を示す断
面側画図である。同図において、（６）は一端が前記放
熱フィン（４）に取シ付けられた腕、（７）は一端がこ
の腕（６１の他端に取シ付けられたバイメタルである。FIG. 2 is a cross-sectional side view showing one embodiment of the semiconductor device according to the present invention. In the figure, (6) is an arm whose one end is attached to the radiation fin (4), and (7) is a bimetal whose one end is attached to the other end of this arm (61).

なお、このバイメタル（７）は−例として、糾膨張係数
の異なる２つの金属ｉｔ接合したものであシ、通常はそ
の一端が半導体素子（３）に圧接されるように反ってい
るが、半導体素子（３７の発熱量が大きくなるにしたが
って、その反ルが小さくなシ、半導体素子（３１との接
触面積が多くなるように構成されている。Note that this bimetal (7) is, for example, made by joining two metals with different thermal expansion coefficients, and is usually curved so that one end is pressed against the semiconductor element (3). It is configured such that as the amount of heat generated by the element (37) increases, its warpage becomes smaller and the contact area with the semiconductor element (31) increases.

次に、上記構成による半導体装置の放熱動作について説
明する。まず、半導体素子（３）が作動すると、熱が発
生する。この熱の一部は半田ボール（２）を通じて、多
層セラ２ツク基；ｆｉ（ＩＪに逃げるが、大部分の熱は
バイメタル（７３の一部から腕（６）を通じて放熱フィ
ン（４）に伝わシ放熱する。そして、半導体素子（３）
の発熱が太きくなると、バイメタル（７）Ｋ伝わる熱も
大きくなるから、バイメタル（７Ｊの反シが小さくな〉
、半導体素子（３）との接触面積が大きくなる。このた
め、半導体素子＋３１からバイメタル（７）および腕（
６）を通じて、放熱フィン（４）に至る伝熱軽路の面積
が増加し、放熱量が増加する。そして、もし半導体素子
（３］が過冷却になると、バイメタル（７）の反シが人
きくなル、半導体素子（３）との接触面積が減少するた
め、放熱量が減少する。Next, the heat dissipation operation of the semiconductor device with the above configuration will be explained. First, when the semiconductor element (3) operates, heat is generated. A part of this heat escapes to the multilayer ceramic 2 fi (IJ) through the solder ball (2), but most of the heat is transferred from a part of the bimetal (73) to the heat dissipation fin (4) through the arm (6). The semiconductor element (3)
As the heat generated by the bimetal (7)K increases, the heat transmitted by the bimetal (7)K also increases, so the resistance of the bimetal (7J) decreases.
, the contact area with the semiconductor element (3) becomes larger. Therefore, from the semiconductor element +31 to the bimetal (7) and the arm (
6), the area of the light heat transfer path leading to the heat radiation fins (4) increases, and the amount of heat radiation increases. If the semiconductor element (3) becomes supercooled, the bimetal (7) becomes stiffer and the contact area with the semiconductor element (3) decreases, thereby reducing the amount of heat dissipated.

なお、以上の実施例では、腕（６）を単なる棒にしたが
、それをスプリング内蔵として、腕（６）と半導体素子
（３）の接触をよシ確実とすると共に、半導体素子（３
）と放熱フィン（４）のすき閏の変化に対応できる。ま
た、バイメタル（７）の半導体素子（３）に接する方の
面に歌い金属、例えばインジュウム中細いワイヤーを編
んだものを付けることで、バイメタル（７）と半導体素
子（３）の接触時に、接触の確実さｔ？するようにして
もよいことは奄ちろんである。In the above embodiments, the arm (6) is a simple rod, but it has a built-in spring to ensure more reliable contact between the arm (6) and the semiconductor element (3).
) and the radiating fin (4). In addition, by attaching a woven metal such as indium thin wire to the side of the bimetal (7) that is in contact with the semiconductor element (3), contact can be made when the bimetal (7) and the semiconductor element (3) come into contact. The certainty of t? Of course, you can do what you want.

以上詳ＪａｌＫ説明したように、この発明に係る半導体
装置によれば発熱量のちがう半導体素子を同一の放熱機
構な用いて放熱することができる効果がある。As described above in detail, the semiconductor device according to the present invention has the advantage that semiconductor elements having different amounts of heat can be radiated using the same heat radiating mechanism.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の半導体装置を示す概略断面側面図、第２
図はこの発９１１に係る半導体装置の一実施例管示す概
略断面側面図である。 （１）・・・・多層セラミック基板、（２）・・・・半
田ボール、（３）・・−・半導体素子、（４）・・・・
放熱フィン、　（５）・・・・リーフスプリング、（６
Ｊ・・・・腕、（７３・・・・バイメタル。 なお、図中、同一符号は同一または相当部分を示す。 代１人　葛　野　信　−（外１名） 第１図Figure 1 is a schematic cross-sectional side view showing a conventional semiconductor device;
The figure is a schematic cross-sectional side view showing one embodiment of a semiconductor device according to this invention 911. (1)...Multilayer ceramic substrate, (2)...Solder ball, (3)...Semiconductor element, (4)...
Heat dissipation fin, (5) Leaf spring, (6
J... Arm, (73... Bimetal. In the figures, the same reference numerals indicate the same or equivalent parts. 1 person Shin Kuzuno - (1 other person) Figure 1

Claims (1)

【特許請求の範囲】[Claims] 半導体素子から発生する熱を放熱経路を通じて放熱フィ
ンから放熱する半導体装置において、前記放熱経路の一
部をバイメタルで構成し、半導体素子から発生する発熱
の大小によって、このバイメタルの半導体素子との接触
面積が変わ）、放熱量ｆ：　ｌ！ＩＪ　６１することヲ
４Ｇ徴とする半導体装置。In a semiconductor device in which heat generated from a semiconductor element is radiated from a radiation fin through a heat radiation path, a part of the heat radiation path is made of a bimetal, and the contact area of the bimetal with the semiconductor element is determined depending on the magnitude of the heat generated from the semiconductor element. ), heat radiation amount f: l! IJ 61 A semiconductor device with 4G characteristics.
JP19352381A 1981-11-28 1981-11-28 Semiconductor device Pending JPS5892247A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19352381A JPS5892247A (en) 1981-11-28 1981-11-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19352381A JPS5892247A (en) 1981-11-28 1981-11-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5892247A true JPS5892247A (en) 1983-06-01

Family

ID=16309482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19352381A Pending JPS5892247A (en) 1981-11-28 1981-11-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5892247A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5131456A (en) * 1991-07-01 1992-07-21 Ibm Corporation Bimetallic insert fin for high conduction cooling structure
US5486389A (en) * 1991-04-05 1996-01-23 Gerber Garment Technology, Inc. Roll of tape with doubly adhesively faced pads
JP2009016239A (en) * 2007-07-06 2009-01-22 Toyota Motor Corp Temperature control structure of power source body, and vehicle
EP2315285A1 (en) * 2009-10-22 2011-04-27 Nxp B.V. Apparatus for regulating the temperature of a light emitting diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486389A (en) * 1991-04-05 1996-01-23 Gerber Garment Technology, Inc. Roll of tape with doubly adhesively faced pads
US5131456A (en) * 1991-07-01 1992-07-21 Ibm Corporation Bimetallic insert fin for high conduction cooling structure
JP2009016239A (en) * 2007-07-06 2009-01-22 Toyota Motor Corp Temperature control structure of power source body, and vehicle
EP2315285A1 (en) * 2009-10-22 2011-04-27 Nxp B.V. Apparatus for regulating the temperature of a light emitting diode
US8217558B2 (en) 2009-10-22 2012-07-10 Nxp B.V. Apparatus for regulating the temperature of a light emitting diode

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