JPS589155B2 - イオンプレ−テイングソウチ - Google Patents
イオンプレ−テイングソウチInfo
- Publication number
- JPS589155B2 JPS589155B2 JP3203275A JP3203275A JPS589155B2 JP S589155 B2 JPS589155 B2 JP S589155B2 JP 3203275 A JP3203275 A JP 3203275A JP 3203275 A JP3203275 A JP 3203275A JP S589155 B2 JPS589155 B2 JP S589155B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plate
- shutter
- ion plating
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007733 ion plating Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 26
- 239000000126 substance Substances 0.000 claims description 15
- 238000001704 evaporation Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- -1 argon ions Chemical class 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3203275A JPS589155B2 (ja) | 1975-03-17 | 1975-03-17 | イオンプレ−テイングソウチ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3203275A JPS589155B2 (ja) | 1975-03-17 | 1975-03-17 | イオンプレ−テイングソウチ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51106640A JPS51106640A (en) | 1976-09-21 |
| JPS589155B2 true JPS589155B2 (ja) | 1983-02-19 |
Family
ID=12347518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3203275A Expired JPS589155B2 (ja) | 1975-03-17 | 1975-03-17 | イオンプレ−テイングソウチ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS589155B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383555U (enExample) * | 1989-12-18 | 1991-08-26 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106244985B (zh) * | 2016-09-22 | 2019-01-11 | 铜陵市铜创电子科技有限公司 | 一种金属化薄膜加工用镀膜机构 |
-
1975
- 1975-03-17 JP JP3203275A patent/JPS589155B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383555U (enExample) * | 1989-12-18 | 1991-08-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51106640A (en) | 1976-09-21 |
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