JPS5889877A - Superconductive circuit device - Google Patents

Superconductive circuit device

Info

Publication number
JPS5889877A
JPS5889877A JP56187185A JP18718581A JPS5889877A JP S5889877 A JPS5889877 A JP S5889877A JP 56187185 A JP56187185 A JP 56187185A JP 18718581 A JP18718581 A JP 18718581A JP S5889877 A JPS5889877 A JP S5889877A
Authority
JP
Japan
Prior art keywords
superconductor
layer
grounding
superconductor layer
superconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56187185A
Other languages
Japanese (ja)
Inventor
Kenichi Kuroda
研一 黒田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56187185A priority Critical patent/JPS5889877A/en
Publication of JPS5889877A publication Critical patent/JPS5889877A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/10Junction-based devices
    • H10N60/12Josephson-effect devices

Abstract

PURPOSE:To obtain the titled superconductive circuit device, whose area can be reduced as a whole, by arranging a common grounding superconductor layer between at least two superconductive circuit constitution parts, and laminating them on a substrate. CONSTITUTION:In the constitution comprising the superconductive circuit constitution parts 10A and 10B and the grounding superconductor layer 2AB, a current is flowed through superconductor layers 9a and 9B constituting the superconductive circuits 4A and 4B, by the grounding superconductor 2AB, and a magnetic field is generated around the superconductor layers 9A and 9B. The magnetic field is located between the grounding superconductor layer 2AB and the superconductor layers 9A and 9B. Josephson junctions 11A and 11B constituting the superconductive circuits 4A and 4B are effectively switched and controlled. The grounding superconductor 2AB, which is provided between the superconducting circuit constitution parts 10A and 10B, indicates diamagnetic property. Therefore, the constitution comprising the superconductive circuit constitution part 10A and the grounding superconductor 2AB and the constitution comprising the superconducting circuit constitution part 10B and the grounding superconductor layer 2AB are operated under the magnetically separated state by the grounding superconductive layer 2AB.

Description

【発明の詳細な説明】 本発明は、絶縁層上に超伝導回路を構成してなるm成の
超伝導回路構IIt部とこれに対する接地用超伝導体層
とが基板上に形成されてなる構成を有する超伝導回路装
置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention is characterized in that an m-component superconducting circuit structure IIt section comprising a superconducting circuit on an insulating layer and a grounding superconductor layer therefor are formed on a substrate. The present invention relates to a superconducting circuit device having a configuration.

J91檀超伝尋回路I&皺として、従来、第1図に下す
如き、シリコン、ガラス等でなる基板1上に、鉛、鉛−
インジウム−金合金、ニオブ等でなる接地用超伝導体層
2が蒸着、スパッタリング等によって形成され、一方像
地用超伝尋体層2上にSio2  等でなる絶縁層6が
蒸着等によって形成され、而してその絶縁層6上に超伝
導回路4が構・成され、この場合超伝導回路4が絶縁層
5上に鉛、鉛−インジウム−金合金、鉛−ビスマス合金
、ニオブ等でなる超伝導体層5が所要のパターンを以っ
て形成され、その少(とも遊端部の表面上に超伝導体層
5に対する酸化処理によりトンネル障壁となる薄い絶縁
層6が形成され、又絶縁層6上に超伝導体層5と一様の
材料でなる超伝導体層7か、超伝導体層5と絶縁層6を
介して対向適長せる態様を以って所要のパターンを以っ
て形成され、更に絶縁層3上に超伝導体層5及び7を埋
設せる態様を以って絶縁層3と一様の材料でなる層間絶
縁層8が形成され、その層間絶縁層8上に、超伝導体層
7が超伝導体層5と絶縁層6を介して対向適長している
部と対時延長せる態様を以って超伝導体層5及び7と同
様の材料でなる超伝導体層9が所要のパターンを以って
形成されてなるllI4成を有するものが提案されてい
る。
Conventionally, as shown in FIG. 1, lead, lead, etc. are placed on a substrate 1 made of silicon, glass, etc.
A ground superconductor layer 2 made of indium-gold alloy, niobium, etc. is formed by vapor deposition, sputtering, etc., and an insulating layer 6 made of Sio2, etc. is formed on the image ground superconductor layer 2 by vapor deposition, etc. Then, a superconducting circuit 4 is formed on the insulating layer 6, and in this case, the superconducting circuit 4 is made of lead, lead-indium-gold alloy, lead-bismuth alloy, niobium, etc. on the insulating layer 5. A superconductor layer 5 is formed in a required pattern, and a thin insulating layer 6 is formed on the surface of the free end portion (at least on the surface of the free end) to serve as a tunnel barrier by oxidizing the superconductor layer 5. A superconductor layer 7 made of the same material as the superconductor layer 5 is formed on the layer 6, or a desired pattern is formed in such a manner that the superconductor layer 5 and the insulating layer 6 are faced to each other in appropriate lengths. An interlayer insulating layer 8 made of the same material as the insulating layer 3 is formed by embedding the superconductor layers 5 and 7 on the insulating layer 3, and on the interlayer insulating layer 8. , the superconductor layer 7 is made of the same material as the superconductor layers 5 and 7, with the superconductor layer 5 and the insulating layer 6 interposed in between, and the superconductor layer 7 facing the insulating layer 6 and extending in parallel with each other. It has been proposed that the conductor layer 9 has an llI4 structure formed in a desired pattern.

所で期る構成を有する超伝導回路装置は、絶一層3及び
超伝導回路4による超伝導回路構成部10を有し、その
超伝導回路構成@10と、これに対する接地用超伝導体
層2とか基f!1上に形成されてなる構成を有するもの
である。そしてこの場合、超伝導回路構成部10の超伝
導回路4が、超伝導体層7が、超伝導体層5に絶縁層6
を介して対向延長している部に於て形成されたジョセフ
ソン接合11を有し、そのジョセフソン接合11が、超
伝導体層7が超伝導体層5にS縁層6を介して対向延長
している部即ちジョセフソン接合11と対向延長してい
る超伝導体層9に111111用電訛が流されることに
よってその超伝導体層9の周りに発生する磁場の影譬を
受けてスイッチング制御されるものである。
The superconducting circuit device having the configuration described above has a superconducting circuit component 10 consisting of an absolute layer 3 and a superconducting circuit 4, and the superconducting circuit configuration @10 and a grounding superconductor layer 2 for this Toka base f! It has a structure formed on 1. In this case, the superconducting circuit 4 of the superconducting circuit component 10 has a superconductor layer 7, a superconductor layer 5 and an insulating layer 6.
The Josephson junction 11 is formed in a portion where the superconductor layer 7 faces the superconductor layer 5 with the S edge layer 6 in between. Switching occurs under the influence of the magnetic field generated around the superconductor layer 9 when the electric current for 111111 is applied to the extended portion, that is, the superconductor layer 9 extending opposite to the Josephson junction 11. It is something that is controlled.

又接地用超伝導体層2が、上述ぜる如くに超伝導体層9
の周りに発生する磁場を、接地用超伝導体層2と超伝導
体層9との間に局在せしめ、値って上述せるジョセフソ
ン接合11のスイツチングll1lI41を効果的にな
さしめるものである。
Further, the grounding superconductor layer 2 is a superconductor layer 9 as described above.
The magnetic field generated around the grounding superconductor layer 2 and the superconductor layer 9 is localized between the grounding superconductor layer 2 and the superconductor layer 9, thereby effectively causing the switching of the Josephson junction 11 described above. .

従って第1図に示す従来の超伝導回路装置によれば、絶
縁層3上に超伝導回路4を構成してなる構成の超伝導回
路構成部10と、これに対する接地用超伝導体層2とが
基板1上に形成されてなる構成を有し、そして接地用超
伝導体層2にて、超伝導1路4を栴成せる超伝導体層9
に流される電流によってその超伝導体層9の周りに発生
する磁場を、接地用超伝導体層2と超伝導体層9との間
に局在せしめて、超伝導回路4を構成せるジョセフソン
接合11を効果的にスイッチングIIJ御せしめ得るも
のである。
Therefore, according to the conventional superconducting circuit device shown in FIG. is formed on the substrate 1, and a superconductor layer 9 capable of forming a superconducting path 4 in the grounding superconductor layer 2.
Josephson constructs a superconducting circuit 4 by localizing a magnetic field generated around the superconductor layer 9 between the grounding superconductor layer 2 and the superconductor layer 9 by a current flowing through the superconductor layer 9. This makes it possible to effectively control the switching IIJ of the junction 11.

然し乍ら、接地用超伝導体層2にて、超伝導回wI4を
1/I#成せる超伝導体層9に流される電流によってそ
の超伝導体層9の周りに発生する磁場を、接地用超伝導
体層2と超伝導体層9との間に局在せしめる様になされ
ている為、接地用超伝導体層2と超伝導体層9との間に
、磁場の影譬を受けてはならない超伝導体層、他のジョ
セフソン接合等を配し得ないという制約を有し、この為
へ伝4−路装置が全体として大向種化するものである。
However, in the grounding superconductor layer 2, the magnetic field generated around the superconductor layer 9 by the current flowing through the superconductor layer 9 that can form a superconducting circuit wI4 of 1/I# is controlled by the grounding superconductor layer 2. Since it is arranged to be localized between the conductor layer 2 and the superconductor layer 9, there is no influence of the magnetic field between the grounding superconductor layer 2 and the superconductor layer 9. However, there are restrictions in that superconductor layers, other Josephson junctions, etc. cannot be disposed, and for this reason, the transmission 4-path device as a whole becomes a major problem.

依って本発明は、全体として小面槓化し得る、νI規な
期檀超伝尋回路装置を提案せんとするもので、以下詳述
する所より明らかとなるであろう。
Therefore, the present invention proposes a νI-standard ultra-transparent circuit device that can be made into a small-sized circuit as a whole, and this will become clear from the detailed description below.

第2図は本発明による超伝導回路装置の一例を示し、第
1図にて上述せる絶縁層3上に超伝導回路4を構成して
なる構成の超伝導回路構成部10とlI!111の構成
を有する超伝導回路構成部の少(とも2つが、第1及び
wJ2の起伝導回路4[ei:l110A及び10Bと
して有し、而してそれ等第1及び第2の超伝導[g1路
構成部10A及び10Bが、それ等間にそれ轡に対して
共通の第1図の場合の接地用超伝導体層2と(ロ)様の
接地用超伝導体層2AB・を配した関係で、第1図の一
合とflllmの基&1上に積重ねられて形成されてな
る構成を有する。尚第1及び第2の超伝導回路構成部1
0人及び10Bに於て、第1図との対応部分には同一符
号にA及びBの附された符号が附されている。
FIG. 2 shows an example of a superconducting circuit device according to the present invention, and in FIG. 111 of the superconducting circuit components (both of which have as first and wJ2 conductive circuits 4[ei:l110A and 10B, which are the first and second superconducting circuits [ei:l110A and 10B)] The g1 path forming parts 10A and 10B have a common grounding superconductor layer 2 in the case of FIG. In relation, it has a structure in which it is stacked on the base &1 of the unit and flllm in FIG. 1.The first and second superconducting circuit components 1
In 0 person and 10B, parts corresponding to those in FIG. 1 are given the same reference numerals with A and B added.

この場合、超伝導回路構成$1OA及び10Bは、超伝
導回路構成部10Aを基板1@とじて基板1上に積重ね
られて形成され、又超伝導回路構成部10A及び10B
は、それ郷の絶縁層3A及び3Bを夫々誉地用超伝導体
層2人B側としているものである。尚この場合超伏4回
路構g部10Bは、それが接地用超伝導体層流の基@1
1mとは反対側の面上に形成されているので、その絶縁
層3−B1超伝導体i!ll513.絶縁層6B°、超
伝導体層7J層間絶縁層8B及び超伝導体層9Bが、帛
1図にて上述せる一超伝嶌回路?lI底部10の場合と
、一様に、それ等の朧に接地用超伝導体層2AB上に形
成されて形成されるも、超伝導回鮎構JiSl:1@5
10Aは、それが接地用超伝導体層2AB・の基板1@
の向上に形成゛されているので、その絶縁層5に、超伝
導体層7A、絶縁層6A、%超伝尋体層5A、層間絶縁
層8人及び超伝導体層9人かそれ等の順とは逆の鵬に基
板1上に形成されるものである。
In this case, the superconducting circuit configurations $1OA and 10B are formed by stacking the superconducting circuit configuration portion 10A on the substrate 1 with the substrate 1@, and superconducting circuit configuration portions 10A and 10B
In this case, the insulating layers 3A and 3B of Sogo are respectively placed on the side of the superconductor layer 2 for Honchi B. In this case, the super-lowered four-circuit structure g section 10B is the grounding superconductor laminar flow base @1
Since it is formed on the surface opposite to 1m, the insulating layer 3-B1 superconductor i! ll513. The insulating layer 6B, the superconductor layer 7J, the interlayer insulating layer 8B, and the superconductor layer 9B form the one-superconductor circuit described above in Figure 1? In the case of the lI bottom part 10, even if they are formed on the grounding superconductor layer 2AB, the superconducting circuit JiSl:1@5
10A is the substrate 1 of the grounding superconductor layer 2AB.
The insulating layer 5 includes a superconductor layer 7A, an insulating layer 6A, a superconductor layer 5A, an interlayer insulating layer 8 and a superconductor layer 9, or It is formed on the substrate 1 in the opposite order.

以上が本発明による超伝導回路装置の−例構成であるか
、馴る構成によれば、その超伝専回に!1@成810A
及び1013の夫々が、第1図にて上述せる超伝導回路
構成部1oと同様の構成を令し、そして超伝導回路W底
部10Aと接地用超伝導体層2ABとよりなる構成、及
び超伝尋回w&偶゛成510Bと接地用超伝導体層2A
Hとよりなる構成が、@1mo)場合の超伝導回路構成
部10・と接地用超伝導体層2とよりなる構IJk4こ
対応するので、超伝導回路構成部10Aと接地用超伝導
体層2ABとよりなる構成に於て、第1医の場合と同様
に、接地用超伝導体層塵にて、超伝導回路4Aを構成せ
る超伝導体層9AIC流されるIILfILによってそ
の超伝導体層9Aの周りに発生する磁場を、接地用超伝
導体層2ABと超伝導体層9ムとの間に局在せしめて′
、超伝導回路4ムを構成せるジョセフソン接合11Aを
効果的にスイッナンク側II!11せしめ俺、又超伝専
回mmg部10Bと接地用超伝導体層2ABとよりなる
構成に於ても、同様に、接地用超伝導体層2ABにて、
超伝導(ロ)路4.uflll成せる超伝導体層9Bに
流される電流によってその超伝導1体1m9Bの周りに
発生する磁場を、接地用超伝導体層2AHと超伝導体1
−9Bとの間に局在せしめて、超伝導回路4Bを栴成せ
るシ’−r * 7 ソ7 接合11 Bを効果的にス
イッf7ダ制倫せしめ得るもので返る。又この為、第1
図の場合と同様に、超伝導回路構成部10Aと接地用超
伝導体層2AHとよりなる構成に於て、接地用超伝導体
層2AB〆超伝導体層9Aとの間に、磁−場の影智を受
けてはならない超伝導体層、他のジョセフソン接合−を
配し侍ないものであり、又超伝導回路構成部1・DBと
接地用超伝導体p#II2 ABとよりなる構成に於て
も、同様に、接地用超伝導体層2ABと超伝導体層9b
との間に、磁場の影参を受けてはならない超伝導体層、
他のジョセフソン接合等を配し鞠ないものである。
The above is an example configuration of a superconducting circuit device according to the present invention, or according to a suitable configuration, it can be used exclusively for superconducting circuits! 1@Nari810A
and 1013 have the same configuration as the superconducting circuit component 1o described above in FIG. Cross-circuit w & even formation 510B and grounding superconductor layer 2A
Since the configuration consisting of H corresponds to the structure IJk4 consisting of the superconducting circuit component 10 and the grounding superconductor layer 2 in @1mo), the superconducting circuit component 10A and the grounding superconductor layer 2 In the configuration consisting of 2AB, as in the case of the first doctor, the superconductor layer 9A that constitutes the superconductor circuit 4A is washed away by the superconductor layer 9AIC that constitutes the superconductor circuit 4A with the grounding superconductor layer dust. The magnetic field generated around is localized between the grounding superconductor layer 2AB and the superconductor layer 9M.
, the Josephson junction 11A that forms the superconducting circuit 4 is effectively switched to the switch side II! 11. Also, in the configuration consisting of the superden dedicated mmg section 10B and the grounding superconductor layer 2AB, similarly, in the grounding superconductor layer 2AB,
Superconducting (b) path 4. The magnetic field generated around the superconductor 1m9B by the current flowing through the superconductor layer 9B, which can be formed by the grounding superconductor layer 2AH and the superconductor 1
-9B to form a superconducting circuit 4B, which can effectively bring about the switch f7 junction 11B. Also, for this reason, the first
As in the case shown in the figure, in the configuration consisting of the superconducting circuit component 10A and the grounding superconductor layer 2AH, a magnetic field is created between the grounding superconductor layer 2AB and the superconductor layer 9A. A superconductor layer that must not be affected by the effects of Similarly, in the configuration, the grounding superconductor layer 2AB and the superconductor layer 9b
A superconductor layer that must not be affected by the magnetic field,
It is possible to arrange other Josephson junctions.

然し乍ら、第2図に示す本発明による超伝導回路装置の
場合、第1図にて上述せる超伝導回路装置i@S10と
lW1様の超伝導回路構成部10A及び10Bが、それ
叫間にそれ等に対して共通の接地用超伝導体層2AHを
配した関係で基板1上に槓重ねられて形成されているの
で、基板1の面積をw、1図の場合の1/2根度迄小と
しても、鵬1図の場合と同様の&kll:を得ることが
出来るものである。又超伝導(ロ)路栴成1@510A
及び10B藺に介挿された接地用超伝導体m2ABか反
磁性を呈するので、超伝導回路構成部10Aと接地用超
伝導体層2ABとよりなる構成、及び超伝導回路構成部
10Bと接地用超伝導一体層2ABとよりなる構成が、
接地用超伝導体層2ABによって、磁気的に互に分離さ
れた状態で動作するものである。
However, in the case of the superconducting circuit device according to the present invention shown in FIG. 2, the superconducting circuit components 10A and 10B of the superconducting circuit devices i@S10 and lW1 described above in FIG. Since the grounding superconductor layer 2AH is placed in common with the substrate 1, the area of the substrate 1 is reduced to w, which is 1/2 of that in Figure 1. Even if it is small, it is possible to obtain &kll: similar to the case of Peng 1. Also, superconductivity (b) route Seiji 1 @ 510A
Since the grounding superconductor m2AB inserted in 10B and 10B exhibits diamagnetic properties, the superconducting circuit component 10A and the grounding superconductor layer 2AB, and the superconducting circuit component 10B and the grounding superconductor layer 2AB The structure consisting of the superconducting monolithic layer 2AB is
They operate in a state where they are magnetically separated from each other by the grounding superconductor layer 2AB.

依って812図にて上述ゼる本発明による超伝導回路装
置によれば、@1図にて上述せる従来の超伝導回路装置
にて得ら°れると同様の機能を、絽1図にて上述せる従
来の超伝導−路装置に比し格段的に小面積化して得るこ
とが出来るという大なる%倣を有するものである。
Therefore, the superconducting circuit device according to the present invention shown in FIG. Compared to the conventional superconducting path device mentioned above, it has a large area reduction and can be obtained with a significantly smaller area.

次に本発明による超伝導−W6装置の他の例を一8g3
図を伴なって述べるに、l121Jとの対応部分には同
一符号を附し詳細説明はこれを省略するも、第2図にて
上述せる構成に於て、その超伝導回路構成部10人に於
て、その層間絶縁層8人及び基板1間に、超伝導体層9
人の周りに於て、その超伝導体層9ムと略々同じ厚さを
有する層間絶縁層8Aと同様の絶縁層25Aがスペーサ
として形成され、又層間絶縁層8人の基板1111とは
反対側の面上に、超伝導体層5ムの周りに於て、その超
伝導体層5ムと略々同じ厚さを有する層間絶縁層8ムと
同様の絶縁層22Aが、層間絶縁層8A上に絶縁層22
Bを介して超伝導体層7人が形成されてなる#/#成が
得られるべ(、スペーサとして形成され、更に超伝導体
層5人及び絶縁層22A上に、超伝導体層710)@り
に於て、その超伝導体層7人と略々同じ厚さを有する層
間絶縁層8人と一様の絶縁層21ムか、一様にスペーサ
として形成され、依って絶縁層3Aが基板1の板面と略
々平行に蝙兼せる平らな上−面を有し、これに応じて接
地用超伝導体層2ABが平らな上面を有し、又超伝導回
路構成@10Bに於て、その絶縁層3Bの接地用超伝導
体層2ABIIとは反対憫の面上に、超伝導体層5Bの
周りに於て、その超伝導体層5Bと略々同じ厚さを有す
る絶縁層5Bと同様の絶縁層21Bが、絶縁層3B上に
絶縁層21Bを介して超伝導体層7Bが形成されてなる
構成が得られるべく、スペーサとして形成され、更に超
伝導体層5B及び絶縁層21B上に、超伝導体層7Bの
周りに於て、その超伝導体層7Bt略々同じ厚さを有す
る絶縁層3Bと同様−の絶縁層22Bが、同様にスペー
サとして形成され、依って層間絶縁層8Bが基板1の板
間と輪々平行に砥長せる平らな上面を有することを除い
てはs m 2図の場合と同様の構成を一有する。
Next, another example of the superconducting W6 device according to the present invention will be described.
To explain this with reference to the drawings, the same reference numerals are given to the parts corresponding to l121J, and the detailed explanation thereof will be omitted. A superconductor layer 9 is placed between the 8 interlayer insulating layers and the substrate 1.
Around the person, an insulating layer 25A similar to the interlayer insulating layer 8A having approximately the same thickness as the superconductor layer 9 is formed as a spacer, and the interlayer insulating layer 25A is opposite to the substrate 1111 of the 8 person. On the side surface, around the superconductor layer 5m, an insulating layer 22A similar to the interlayer insulating layer 8m having approximately the same thickness as the superconductor layer 5m is formed. Insulating layer 22 on top
A #/# structure should be obtained in which seven superconductor layers are formed through B (a superconductor layer 710 is formed as a spacer, and further on five superconductor layers and the insulating layer 22A). In this case, the 7 superconductor layers, the 8 interlayer insulating layers and the uniform insulating layer 21 having approximately the same thickness are uniformly formed as a spacer, so that the insulating layer 3A is It has a flat upper surface that can be used as a base almost parallel to the plate surface of the substrate 1, and correspondingly, the grounding superconductor layer 2AB has a flat upper surface, and also in the superconducting circuit configuration @10B. Then, on the surface of the insulating layer 3B opposite to the grounding superconductor layer 2ABII, an insulating layer having approximately the same thickness as the superconductor layer 5B is placed around the superconductor layer 5B. An insulating layer 21B similar to 5B is formed as a spacer in order to obtain a structure in which a superconductor layer 7B is formed on an insulating layer 3B via an insulating layer 21B, and further superconductor layer 5B and an insulating layer On the superconductor layer 7B, an insulating layer 22B similar to the insulating layer 3B having substantially the same thickness as the superconductor layer 7B is formed on the superconductor layer 7B as a spacer, thus forming an interlayer. The structure is the same as that shown in FIG. sm2, except that the insulating layer 8B has a flat upper surface that can be polished parallel to the interplates of the substrate 1.

実際上絶縁層25ム、22A、21ム、21B及び22
Bは夫々超伝導体層9ム、5ム、7ム、6B及び7Bを
形成して后、所謂リフトオフ法により形成し得るもので
ある。
Practically insulating layers 25, 22A, 21, 21B and 22
B can be formed by a so-called lift-off method after forming superconductor layers 9M, 5M, 7M, 6B and 7B, respectively.

以上が本発明による超伏411jl懺置の他の例の構成
であるが、それがスペーサとしての絶縁層21A、22
ム、25A、21B]び22Bを有するξとを除いては
第21の場合と同様の構成を有するので、92図の場合
と同様の優れたe鎗が得られるものである。
The above is the structure of another example of the super-flat 411jl emplacement according to the present invention.
Since the configuration is the same as in the 21st case except for ξ having 25A, 21B] and 22B, an excellent e-spring similar to that in the case shown in FIG. 92 can be obtained.

然し乍ら、第3図にて上述せる本発明による超伝導回路
装置の場合、スペーサとしての絶縁層21ム、22A、
23ム、21B及び22Bを有するので、超伝導体層5
A17ム、6−B。
However, in the case of the superconducting circuit device according to the present invention described above in FIG. 3, the insulating layers 21A, 22A,
23, 21B, and 22B, the superconductor layer 5
A17mu, 6-B.

7B及び9Bか折重って嬌長することがなく、従ってそ
れ等超伝導体層5ム、7ム、6B17B及び9Bに不必
要に断線が生ずる轡のことがないという特徴を有するも
のである。
7B and 9B do not overlap and elongate, and therefore, there is no possibility of unnecessarily disconnecting the superconductor layers 5, 7, 6, 17B, and 9B. .

尚上述に於ては本発明の僅かな例を示したに留まり超伝
導回路構M、部10A及び10Bの何れか一方が、超伏
4体層を有するもジョセフソン接合を有さざる構成とす
ることも出来るものである。又上述に於ては、ジョセフ
ソン接合が所謂トンネル接合直Satであるとして開示
説明したが、ジョセフソン接合を所−トンネル振合・直
交型とすることも出来、更にはブリッジ型とすることも
出来、その他事発明の精神を脱することなしに檀々の変
型変更をなし得るであろう。
The above description merely shows a few examples of the present invention, and the superconducting circuit structure M has a structure in which either one of the parts 10A and 10B has a super-flat four-body layer but does not have a Josephson junction. It is also possible to do so. Furthermore, in the above description, the Josephson junction has been disclosed and explained as being a so-called tunnel junction straight Sat, but the Josephson junction can also be a tunnel-aligned orthogonal type, or even a bridge type. It would be possible to make other modifications and variations of the figures without departing from the spirit of invention.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の超伝導回路構成を示す4鍼的−f面図、
第2図は本発明によ゛る超伝導回路装置の一例を示す路
線的断面図、第3図は本発明による超伝導回路装置の他
の例を示す略−的断面図である。 図中、1は基板、2ABは接堆用超伝導体層、3A及び
5Bは絶縁層、4A及び4Bは超伝導回路、5人1.5
B、7A、7B、9ム及び9Bは超伝導体層、10ム及
び10Bは超伏4ig回路構成部、11人及び11Bは
ジョセフソン接合、21A、22A、25ム、21B及
び22Bはスペーサとしての絶縁層を夫々示す。 出願人 日本電信電鈷公社
Figure 1 is a 4-axis view showing the conventional superconducting circuit configuration.
FIG. 2 is a schematic sectional view showing one example of the superconducting circuit device according to the present invention, and FIG. 3 is a schematic sectional view showing another example of the superconducting circuit device according to the present invention. In the figure, 1 is a substrate, 2AB is a superconductor layer for contact deposition, 3A and 5B are insulating layers, 4A and 4B are superconducting circuits, 5 people 1.5
B, 7A, 7B, 9 and 9B are superconductor layers, 10 and 10B are super-flat 4ig circuit components, 11 and 11B are Josephson junctions, and 21A, 22A, 25 and 21B and 22B are spacers. The insulating layers are shown respectively. Applicant Nippon Telegraph Corporation

Claims (1)

【特許請求の範囲】[Claims] 絶縁層上に超伝導回路を構成してなる構成の超伝導口*
*g部の少くとも2つ7を#!1及び第2の超伏4同路
構成部として有し、該第1及び絹2の超伝専回路構成鄭
が、それ等間にそれ等に対して共通の接地用超伝導体層
を配した関係で、基板上に積重ねられて形成されてなる
◆を特徴とする超伝導−路装置。
A superconducting port consisting of a superconducting circuit on an insulating layer*
*# at least two 7s in the g section! 1 and a second superconductor 4 as the same circuit component, and the first and second superconductor circuit configurations have a common grounding superconductor layer between them. A superconducting path device characterized by ◆, which is formed by being stacked on a substrate in this manner.
JP56187185A 1981-11-21 1981-11-21 Superconductive circuit device Pending JPS5889877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56187185A JPS5889877A (en) 1981-11-21 1981-11-21 Superconductive circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56187185A JPS5889877A (en) 1981-11-21 1981-11-21 Superconductive circuit device

Publications (1)

Publication Number Publication Date
JPS5889877A true JPS5889877A (en) 1983-05-28

Family

ID=16201593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56187185A Pending JPS5889877A (en) 1981-11-21 1981-11-21 Superconductive circuit device

Country Status (1)

Country Link
JP (1) JPS5889877A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721196A (en) * 1991-02-12 1998-02-24 Sumitomo Electric Industries, Ltd. Stacked tunneling and stepped grain boundary Josephson junction
US11040102B2 (en) 2010-05-14 2021-06-22 Amgen Inc. High concentration antibody formulations

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853874A (en) * 1981-09-26 1983-03-30 Fujitsu Ltd Josephson integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853874A (en) * 1981-09-26 1983-03-30 Fujitsu Ltd Josephson integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721196A (en) * 1991-02-12 1998-02-24 Sumitomo Electric Industries, Ltd. Stacked tunneling and stepped grain boundary Josephson junction
US11040102B2 (en) 2010-05-14 2021-06-22 Amgen Inc. High concentration antibody formulations

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