JPS5888428U - surface acoustic wave device - Google Patents

surface acoustic wave device

Info

Publication number
JPS5888428U
JPS5888428U JP14019282U JP14019282U JPS5888428U JP S5888428 U JPS5888428 U JP S5888428U JP 14019282 U JP14019282 U JP 14019282U JP 14019282 U JP14019282 U JP 14019282U JP S5888428 U JPS5888428 U JP S5888428U
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
wave device
axis
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14019282U
Other languages
Japanese (ja)
Inventor
昇 若月
高野 昌介
加茂 武志
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP14019282U priority Critical patent/JPS5888428U/en
Publication of JPS5888428U publication Critical patent/JPS5888428U/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はニオブ酸リチウム単結晶基板の結晶軸配向の説
明図、第2図は本考案の実施例の構成を示す説明図、第
3図a、  b〜第10図は本考案の効果を示す特性図
であり、図中、1は基板、2□。 2□は入出カドランジューサ、3は伝搬路、4はシリコ
ン酸化膜を示す。
Fig. 1 is an explanatory diagram of the crystal axis orientation of a lithium niobate single crystal substrate, Fig. 2 is an explanatory diagram showing the configuration of an embodiment of the present invention, and Figs. 3a, b to 10 illustrate the effects of the present invention. In the figure, 1 is the substrate and 2 □. 2□ indicates an input/output quadrant, 3 indicates a propagation path, and 4 indicates a silicon oxide film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 結晶軸配向をy軸回転角125°〜131’の方向とす
るようにカットしたニオブ酸リチウム単結晶基板上に入
出力電極を形成し1該入出力電極を含む前記基板の上に
弾性表面波波長の1720以上175未満の膜厚のシリ
コン酸化膜を被着したことを特徴とする弾性表面波素子
Input/output electrodes are formed on a lithium niobate single crystal substrate cut so that the crystal axis is oriented at a y-axis rotation angle of 125° to 131'; 1. A surface acoustic wave device comprising a silicon oxide film having a thickness of 1720 or more and less than 175 wavelength.
JP14019282U 1982-09-16 1982-09-16 surface acoustic wave device Pending JPS5888428U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14019282U JPS5888428U (en) 1982-09-16 1982-09-16 surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14019282U JPS5888428U (en) 1982-09-16 1982-09-16 surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPS5888428U true JPS5888428U (en) 1983-06-15

Family

ID=29933362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14019282U Pending JPS5888428U (en) 1982-09-16 1982-09-16 surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPS5888428U (en)

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