JPS5878668U - Composite semiconductor device - Google Patents
Composite semiconductor deviceInfo
- Publication number
- JPS5878668U JPS5878668U JP17439281U JP17439281U JPS5878668U JP S5878668 U JPS5878668 U JP S5878668U JP 17439281 U JP17439281 U JP 17439281U JP 17439281 U JP17439281 U JP 17439281U JP S5878668 U JPS5878668 U JP S5878668U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- composite semiconductor
- acoustic wave
- surface acoustic
- composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は弾性表面波発振器の回路図、第２図ａ。
ｂは個別基板で構成した弾性表面波発振器の各々平面と
側面を示す構造図、第３図ａ、 ｂは同一平面上に半
導体装置と弾性表面波装置を構成した従来の複合半導体
装置の各々牟面と側面を示す構造図、第４図ａ、 ｂ
、第５図は各々本考案の実施例の複合半導体装置の構造
図である。
なお図において、１，３・・・・・・半導体装置、２゜
４・・・・・・弾性表面波装置、５・・・・・・ケース
、６・・・・・・同一基板、１１． １２・・・・・・
トランスジューサ、２１ ・・・・・・・圧電膜、３１
・・・・・・５ｉｎ２膜、４１・・・・・・集積回路、
５１・・・・・・Ｓｉ又はＧａＡｓ基板、６１・・・・
・・サファイア基板、である。FIG. 1 is a circuit diagram of a surface acoustic wave oscillator, and FIG. 2a is a circuit diagram of a surface acoustic wave oscillator. 3b is a structural diagram showing the plane and side surfaces of a surface acoustic wave oscillator constructed from individual substrates, and FIGS. Structural drawings showing faces and sides, Figure 4 a, b
, and FIG. 5 are structural diagrams of composite semiconductor devices according to embodiments of the present invention. In the figure, 1, 3... Semiconductor device, 2゜4... Surface acoustic wave device, 5... Case, 6... Same substrate, 11 ．． 12...
Transducer, 21 Piezoelectric film, 31
...5in2 film, 41 ... integrated circuit,
51... Si or GaAs substrate, 61...
...It is a sapphire substrate.
Claims (1)
半導体装置において、絶縁膜により保護された該半導体
装置の上部に設けられた圧電膜を使用して該弾性表面波
装置が形成されていることを特徴とする複合半導体装置
。In a composite semiconductor device including a surface acoustic wave device and a semiconductor device, the surface acoustic wave device is formed using a piezoelectric film provided on the top of the semiconductor device protected by an insulating film. A composite semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17439281U JPS5878668U (en) | 1981-11-24 | 1981-11-24 | Composite semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17439281U JPS5878668U (en) | 1981-11-24 | 1981-11-24 | Composite semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5878668U true JPS5878668U (en) | 1983-05-27 |
Family
ID=29966384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17439281U Pending JPS5878668U (en) | 1981-11-24 | 1981-11-24 | Composite semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5878668U (en) |
-
1981
- 1981-11-24 JP JP17439281U patent/JPS5878668U/en active Pending
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