JPS5887348U - Semiconductor devices with antistatic treatment - Google Patents
Semiconductor devices with antistatic treatmentInfo
- Publication number
- JPS5887348U JPS5887348U JP18310281U JP18310281U JPS5887348U JP S5887348 U JPS5887348 U JP S5887348U JP 18310281 U JP18310281 U JP 18310281U JP 18310281 U JP18310281 U JP 18310281U JP S5887348 U JPS5887348 U JP S5887348U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor devices
- antistatic treatment
- semiconductor device
- antistatic
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Packaging Frangible Articles (AREA)
- Elimination Of Static Electricity (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
図はこの考案の実施例を示し、第1図はこの考案の半導
体ディバイス、第2図この考案の断面図、第3図はこの
考案の本体の一部拡大断面図である。
なお図中1は半導体ディバイス、2は本体、3は端子、
4は極薄膜である。The drawings show an embodiment of this invention; FIG. 1 is a semiconductor device of this invention, FIG. 2 is a sectional view of this invention, and FIG. 3 is a partially enlarged sectional view of the main body of this invention. In the figure, 1 is the semiconductor device, 2 is the main body, 3 is the terminal,
4 is an extremely thin film.
Claims (1)
剤から成る均一かつ連続した極薄膜を形成せしめたこと
を特徴とする帯電防止処理を施した半導体ディバイス。A semiconductor device subjected to antistatic treatment, characterized in that a uniform and continuous ultra-thin film made of an antistatic agent is formed on the outer surface of the main body and each terminal of the semiconductor device.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18310281U JPS5887348U (en) | 1981-12-09 | 1981-12-09 | Semiconductor devices with antistatic treatment |
EP82304114A EP0080790A3 (en) | 1981-08-10 | 1982-08-04 | Method and apparatus for forming an extremely thin film on the surface of an object |
US06/412,988 US4605574A (en) | 1981-09-14 | 1982-08-30 | Method and apparatus for forming an extremely thin film on the surface of an object |
US06/745,876 US4656963A (en) | 1981-09-14 | 1985-06-18 | Method and apparatus for forming an extremely thin film on the surface of an object |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18310281U JPS5887348U (en) | 1981-12-09 | 1981-12-09 | Semiconductor devices with antistatic treatment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5887348U true JPS5887348U (en) | 1983-06-14 |
JPS62193Y2 JPS62193Y2 (en) | 1987-01-07 |
Family
ID=29982064
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18310281U Granted JPS5887348U (en) | 1981-08-10 | 1981-12-09 | Semiconductor devices with antistatic treatment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5887348U (en) |
-
1981
- 1981-12-09 JP JP18310281U patent/JPS5887348U/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62193Y2 (en) | 1987-01-07 |
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