JPS5880544A - Detector for foreign matter on reticle of exposure device - Google Patents

Detector for foreign matter on reticle of exposure device

Info

Publication number
JPS5880544A
JPS5880544A JP17898781A JP17898781A JPS5880544A JP S5880544 A JPS5880544 A JP S5880544A JP 17898781 A JP17898781 A JP 17898781A JP 17898781 A JP17898781 A JP 17898781A JP S5880544 A JPS5880544 A JP S5880544A
Authority
JP
Japan
Prior art keywords
light
reticle
exposure
photoelectric conversion
foreign object
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17898781A
Other languages
Japanese (ja)
Other versions
JPS6361613B2 (en
Inventor
Mitsuyoshi Koizumi
小泉 光義
Nobuyuki Akiyama
秋山 伸幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17898781A priority Critical patent/JPS5880544A/en
Publication of JPS5880544A publication Critical patent/JPS5880544A/en
Publication of JPS6361613B2 publication Critical patent/JPS6361613B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Abstract

PURPOSE:To detect foreign matter in a reticle while the reticle is held set in the optical path for exposure by providing a means for generating laser light and an optical conducting means which conducts the laser light in the same direction as that of the exposure light in the optical path before the light for exposure enters a condenser lens. CONSTITUTION:A detector for foreign matter on the reticle of an exposure device is so constituted as to irradiate a reticle 5 having a pattern with the light condensed by condenser lenses 2, 4 and to form the pattern image on the photoresist coated on a wafer 8 or a mask. A means for generating laser light 20 is provided to this device, and an optical conductive means for introducing the laser light 20 in the same direction as exposure light is provided in the optical path before the light for exposure enters the lenses 2, 4. The foreign matter in the reticle 5 is detected while the reticle is held set in the optical path for exposure.

Description

【発明の詳細な説明】 5  。[Detailed description of the invention] 5.

本発明は縮小投影式露光装置、ホ) IJビータ、1:
1 露光装置等の露光装置におけるレチクル上に付着し
た異物の検査方法に関するものである。
The present invention relates to a reduction projection type exposure apparatus, (e) IJ beater, 1:
1. This invention relates to a method for inspecting foreign matter adhering to a reticle in an exposure device such as an exposure device.

先ず、露光装置の代表例として、縮小投影式線光装置の
原理を第1図に基づいて説明する。この露光装置の露光
照明光50の光源には水銀灯1が使用される。水銀灯1
よシの光はコンデンサレンズ2、干渉フィルタ15、絞
シ16、ミラ6、コンデンサレンズ4を径て、LSIパ
ターン5at−有する乾板のレチクル5を照明する。パ
ターン5aの像はM小レンズ7によシウエハ8の上面に
縮小結像される(光路を実線で示しである。)。ウェハ
8上にはホトレジストが塗布されてあり、LSIパター
ン5aの縮小礒がホトレジスト内の潜像となる。シャッ
タ51による設定露光時間の照明光50の露光完了後、
ウェハ8を取出し、現偉すると、ホトレジスト上にLS
Iパターン5aの縮小パターンを得る。
First, as a representative example of an exposure apparatus, the principle of a reduction projection type linear light apparatus will be explained based on FIG. A mercury lamp 1 is used as a light source for exposure illumination light 50 of this exposure apparatus. Mercury lamp 1
The light passes through a condenser lens 2, an interference filter 15, an aperture 16, a mirror 6, and a condenser lens 4, and illuminates a dry plate reticle 5 having an LSI pattern 5at. The image of the pattern 5a is reduced and formed on the upper surface of the wafer 8 by the M small lens 7 (the optical path is shown by a solid line). A photoresist is coated on the wafer 8, and the reduced size of the LSI pattern 5a becomes a latent image in the photoresist. After the exposure of the illumination light 50 for the set exposure time by the shutter 51 is completed,
When wafer 8 is removed and exposed, LS is formed on the photoresist.
A reduced pattern of I pattern 5a is obtained.

ここで、レチクル5上に異物6が存在する場合には、異
物6がホトレジスト上に誤った像を形成し、所望のLS
Iパターンが得られず、ウェハ8は及び現象の後に、つ
霊ハ8上のホトレジストパターンを検査する必要がある
が、目視検査の為、見逃しが発生する。
Here, if a foreign object 6 exists on the reticle 5, the foreign object 6 forms a wrong image on the photoresist, and the desired LS
After the I-pattern cannot be obtained and the wafer 8 is removed, it is necessary to inspect the photoresist pattern on the wafer 8, but because the inspection is done visually, oversights occur.

作業所内での空気中の塵埃が、異物6としてレチクル5
を装置内に装着後にレチクル5上に付着することがある
ので、レチクル5の装着状態で、レチクル5上を顕微鏡
観察することによる異物検査を適宜性なうことが望まし
い。
Dust in the air in the workplace is detected as a foreign object 6 on the reticle 5.
Since foreign objects may adhere to the reticle 5 after being installed in the apparatus, it is desirable to conduct a foreign matter inspection by observing the reticle 5 with a microscope while the reticle 5 is installed.

しかしながら、装着後のレチクル5上にはコンデンサレ
ンズ4やレチクル装着機構が存在する為に装着後のレチ
クル5を目視観察することはできない。そこで、従来は
レチクル5を適宜外部に取出して検査を行っている。こ
の場合には、レチクルの取出し取入れ作業中に作業員の
発生する塵埃のため更に異物が付着するという問題があ
る。
However, since the condenser lens 4 and the reticle mounting mechanism are present on the mounted reticle 5, the mounted reticle 5 cannot be visually observed. Therefore, conventionally, the reticle 5 is taken out to the outside and inspected. In this case, there is a problem in that dust generated by the worker during the reticle take-out and take-in operations causes further foreign matter to adhere to the reticle.

縮小レンズ7の縮小比をlAoとした場合(例えば、Z
eiaa 5−Planar 50mを使用した場合)
、レチクル上面に10μm以上、下面に5μm以上の大
きさの異物が付着した場合は誤った潜像を形成するので
、これらの異物の検出をレチクルの装着状態で行う必要
がある。
When the reduction ratio of the reduction lens 7 is lAo (for example, Z
When using eiaa 5-Planar 50m)
If a foreign object with a size of 10 μm or more adheres to the top surface of the reticle and 5 μm or more to the bottom surface, an erroneous latent image will be formed, so it is necessary to detect these foreign objects while the reticle is attached.

本発明の目的は、上記した従来技術の欠点をなくシ、レ
チクルを露光光路にセットした状態でレチクルに付着し
九異物を検出することができる露光装置のレチクル上の
異物検出装置を提供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to provide a foreign object detection device on a reticle of an exposure apparatus that can detect foreign objects attached to a reticle while the reticle is set in an exposure optical path. be.

本発明による露光装置のレチクル上の異物検出装置は、
コンデンサレンズで集光された元でパターンを有するレ
チクルを照射し、ウェハ又はマスク上に塗布されたホト
レジスト上にパターン像を結像させる露光装置における
前記レチクル上の異物の検出装置において、(a)レー
ザ光を発生する手段と、(b)前記の露光の為の光が前
記コンデンサレンズに入る前の光路に、咳露元党と同一
方向に前記レーザ光を導入する導光手段と、(C)該レ
ーザ光をレチクルのパターン面に集光し、該面に来光ス
ポットを形成させる光学手段と、(d)該集光レーザ元
スボツ)tレチクル全面に亘って走査させる走査手段と
、(e)該レーザ光がレチクル上の異物に反射して発生
する散乱光を光電変換素子に導く導光手段と、げ)該散
乱光を導光手段を介して、又は導光手段を介して及び直
接に、受光する光電変換素子と、(2))光電変換素子
の出力信号に基き、異物の有無を判断表示する手段と、
よ多生としてなることを特徴とする検出装置である。
A foreign matter detection device on a reticle of an exposure apparatus according to the present invention includes:
In an apparatus for detecting foreign matter on a reticle in an exposure apparatus that irradiates a reticle having a pattern with light focused by a condenser lens and forms a pattern image on a photoresist coated on a wafer or a mask, (a) means for generating laser light; (b) light guide means for introducing the laser light in the same direction as the exposure light onto an optical path before the light for exposure enters the condenser lens; (d) an optical means for condensing the laser beam onto a patterned surface of a reticle and forming an incident spot on the surface; (d) a scanning means for scanning the entire surface of the reticle; e) a light guide means for guiding the scattered light generated by the laser light reflected by a foreign object on the reticle to the photoelectric conversion element; a photoelectric conversion element that directly receives light; (2) means for determining and displaying the presence or absence of foreign matter based on the output signal of the photoelectric conversion element;
This is a detection device that is characterized by being very versatile.

本発明による異物検出装置の好ましい態様においては、
前記の散乱光の導光手段が、レーザ光の導入の為の導光
手段、集光の為の光学手段及び走査手段を利用して構成
され、該散乱光をレーザ光の入射光路を逆に進行させた
後、ミラによシ該光路より正反射光と分離して取出して
、光電変換素子に導光するようにしである。
In a preferred embodiment of the foreign object detection device according to the present invention,
The light guiding means for the scattered light is configured using a light guiding means for introducing the laser beam, an optical means for condensing light, and a scanning means, and the scattered light is reversed in the incident optical path of the laser beam. After advancing, the mirror separates the specularly reflected light from the optical path and takes it out, and guides the light to a photoelectric conversion element.

本発明による異物検出装置の更に好ましい態様において
は、前記の散乱光の導光手段が、前記のレーザ元巣元の
為の光学手段のコンデンサレンズに並置され、該コンデ
ンサレンズが集光不能の散乱光を光軸に向ける補助レン
ズ全有する。
In a further preferred embodiment of the foreign object detection device according to the present invention, the light guiding means for the scattered light is arranged in parallel with a condenser lens of the optical means for the laser source, and the condenser lens It has a full set of auxiliary lenses that direct the light toward the optical axis.

本発明による異物検出装置の他の好ましい態様において
は、前記光電変換素子が、前記の散乱光の導光手段の導
光路の端末に設けられていると共に、前記レチクルの周
縁の上側と下側に、該レチクルに向けて複数個設けられ
である。
In another preferred embodiment of the foreign object detection device according to the present invention, the photoelectric conversion element is provided at the end of the light guide path of the light guide means for the scattered light, and at the upper and lower sides of the periphery of the reticle. , are provided in plurality toward the reticle.

先ず、第2図にレーザ光20ヲレチクル5上に照射した
時の異物6からの散乱光210発生状況を模式的に示す
。回路パターン5aはレチクル5の下面に形成されてあ
り、また、レーザ光20はレチクル5の下面にスポット
を形成している。従ってレチクル5の下面におけるレー
ザ光20の照射強度は上面におけるものよυ大となる。
First, FIG. 2 schematically shows how scattered light 210 is generated from the foreign object 6 when the laser beam 20 is irradiated onto the reticle 5. The circuit pattern 5a is formed on the lower surface of the reticle 5, and the laser beam 20 forms a spot on the lower surface of the reticle 5. Therefore, the irradiation intensity of the laser beam 20 on the lower surface of the reticle 5 is υ larger than that on the upper surface.

即ち、異物6からの反射散乱光の強度は、同一大きさで
は下面付層の異物によるものの方が大で、同一強度とな
る為には上面付着の異物が大きなければならなく、その
大きさく径)の比率は概ね1:2である。従って、前述
の如き誤った潜像を形成する上面10μm1下面5μm
の異物よりの散乱光が同一強度となるので、照射レーザ
光の強度を適切に選ぶことにより、一つのレーザスポッ
トの形成で上述の大きさ以上の上下面の異物を同時に検
出することができる。
In other words, the intensity of the reflected and scattered light from the foreign object 6 is greater when the intensity is the same for the foreign object on the lower surface layer, and in order to have the same intensity, the foreign object attached to the upper surface must be large, and its size The ratio of diameter) is approximately 1:2. Therefore, the upper surface 10 μm and the lower surface 5 μm form the erroneous latent image as described above.
Since the scattered light from the foreign object has the same intensity, by appropriately selecting the intensity of the irradiated laser beam, it is possible to simultaneously detect foreign objects of the above-mentioned size or larger on the upper and lower surfaces by forming one laser spot.

LSIパターン5aのエッヂでの散乱光主成分22の角
その強度も著しく弱い。また、LSIパターン5a裏面
に照射されたレーザ光は、レチクル5面におけると同様
に正反射する。
The intensity of the main component 22 of the scattered light at the edge of the LSI pattern 5a is also extremely weak. Further, the laser beam irradiated onto the back surface of the LSI pattern 5a is specularly reflected in the same manner as on the reticle 5 surface.

次に、第6図の本発明の装置の実施例を説明する。この
装置は、第1図の縮小投影式露光装置に装着されたもの
である。但し、水銀灯1よりの照明光50を反射させる
反射用ミラ6を、レーザ20を通過させる為にダイクロ
イックミラ6aとしである。
Next, an embodiment of the apparatus of the present invention shown in FIG. 6 will be described. This apparatus is attached to the reduction projection type exposure apparatus shown in FIG. However, the reflecting mirror 6 that reflects the illumination light 50 from the mercury lamp 1 is a dichroic mirror 6a to allow the laser 20 to pass through.

レーザ発振器9によシレーザ20が発振され、レーザビ
ーム変換用レンズ10ヲ透過し、偏向器11a111b
で反射し、ダイクロイックミラ5a f透過し、コンデ
ンサレンズ4によりレチクル5下面にレーザスポット2
0a k形成する。レチクル5下面のレーザビーム) 
20aは、偏向器10a 、 10bの同期偏向により
、レチクル5上を第4図に示すように全面走査する。走
査間隔Pはレーザビーム) 21aと同−径又はそれ以
下にすることが必要である。      □第3図(e
)に示すように、異物6に照射されたレーザ20により
反射散乱光21が発生する。散乱光21はコンデンサレ
ンズ4、ダイクロイックミラ5a t−透過、偏光器1
1m、11bに反射され、レンズ10ヲ透過し、反射き
う12′で反射されて、光電変換素子15に導かれる。
A laser beam 20 is oscillated by the laser oscillator 9, transmitted through the laser beam conversion lens 10, and deflected by the deflector 11a111b.
It is reflected by the dichroic mirror 5a, transmitted by the dichroic mirror 5a, and a laser spot 2 is formed on the lower surface of the reticle 5 by the condenser lens 4.
Form 0a k. (Laser beam on the bottom surface of reticle 5)
20a scans the entire surface of the reticle 5 as shown in FIG. 4 by synchronized deflection of the deflectors 10a and 10b. The scanning interval P needs to be the same diameter as the laser beam 21a or smaller. □Figure 3 (e
), reflected and scattered light 21 is generated by the laser 20 irradiated onto the foreign object 6. The scattered light 21 is transmitted through a condenser lens 4, a dichroic mirror 5a, and a polarizer 1.
1m and 11b, passes through the lens 10, is reflected by the reflection plate 12', and is guided to the photoelectric conversion element 15.

反射ばう12は第5図(b)に示すように、環状をなし
、中央開口部で、入射レーザ20及び該入射光がレチク
ル5及びパターン5aに照射され、反射する正反射光を
通過せしめ、異物にて乱反射して発生して、入射光の元
軸より逸れる散乱光21のみを環状の碗部で反射する。
As shown in FIG. 5(b), the reflection chamber 12 has an annular shape, and has a central opening through which the incident laser 20 and the incident light are irradiated onto the reticle 5 and the pattern 5a, and the reflected specularly reflected light is allowed to pass through. , only the scattered light 21 that is generated by diffuse reflection from a foreign object and deviates from the original axis of the incident light is reflected by the annular bowl portion.

第6図(a)で斜線を入れである部分を進む反射光は光
電変換素子13に導かれない。
In FIG. 6(a), the reflected light that travels through the shaded area is not guided to the photoelectric conversion element 13.

光電変換素子15が受光すると電気信号を出力する。第
5図に光電変換素子よりの出力信号の処理回路管示しで
ある。光電変換素子15よシの出力電流は抵抗Rで電圧
に変換され、利得回路50で増幅され、二値化回路51
で予め設定された電圧値VOとの大小比較が行われ、入
力電圧値がVOよシ大なるときは、異物表示回路62で
異物の表示が行なわれる。
When the photoelectric conversion element 15 receives light, it outputs an electric signal. FIG. 5 shows a processing circuit for output signals from the photoelectric conversion element. The output current from the photoelectric conversion element 15 is converted into a voltage by a resistor R, amplified by a gain circuit 50, and then converted to a voltage by a binarization circuit 51.
A comparison is made between the input voltage value and a preset voltage value VO, and when the input voltage value is greater than VO, the foreign object display circuit 62 displays a foreign object.

本発明の装置の他の実施例を第6図に示す。この装置は
、第6図の装置と較べるに、コンデンサレンズに並べて
退去可能な補助レンズ60が設けである以下は同じであ
る。補助レンズ60は図示のように異物検出時のみ露光
装置に装着(IN)され、露光時は退去(OUT)され
る。この装置においては、コンデンサレンズ4への入射
角が大で、コンデンサレンズ4が集光不能な散乱光21
a を補助レンズ60が元軸に向け、光電変換素子16
に受光可能とする。これにより異物検出能を向上するこ
とができる。補助レンズ60ヲ第6図に示すようにダイ
クロイックミラ6aとレチクル50間に設けるときは、
パターンj1元時に退去させる必要があるが、補助レン
ズ60をダイクロイックミラ5aとミラ12の間に設け
るときは退去させる必要はない。但し補助レンズ60が
レチクル5よ9隔たるに従って、レチクル5と補助レン
ズ60間の部材の受光面を大きくする必要があり、補助
レンズ60の効果も少くなる。
Another embodiment of the device of the invention is shown in FIG. This device is the same as the device shown in FIG. 6 except that it is provided with an auxiliary lens 60 that can be removed alongside the condenser lens. As shown in the figure, the auxiliary lens 60 is attached to the exposure apparatus (IN) only when foreign matter is detected, and is removed (OUT) during exposure. In this device, the incident angle to the condenser lens 4 is large, and the scattered light 21 that cannot be collected by the condenser lens 4
The auxiliary lens 60 directs a toward the original axis, and the photoelectric conversion element 16
It is possible to receive light. This makes it possible to improve the ability to detect foreign objects. When the auxiliary lens 60 is installed between the dichroic mirror 6a and the reticle 50 as shown in FIG.
Although it is necessary to remove the lens when forming the pattern j1, there is no need to remove it when the auxiliary lens 60 is provided between the dichroic mirror 5a and the mirror 12. However, as the distance between the auxiliary lens 60 and the reticle 5 increases by 9, it is necessary to increase the light receiving surface of the member between the reticle 5 and the auxiliary lens 60, and the effect of the auxiliary lens 60 also decreases.

本発明の装置における光電変換素子の設置についての他
の実施例を第7図に基づいて説明する。
Another embodiment of the installation of photoelectric conversion elements in the apparatus of the present invention will be described based on FIG. 7.

本発明の装置においては、前述の如き散乱光の導光手段
の導光路の端末に光電変換素子を設けると共に、更にレ
チクル周縁の上側と下側に、レチクルに向けて複数個の
別の光電変換素子を設けるときは、異物検出能を更に向
上させることができる。
In the apparatus of the present invention, a photoelectric conversion element is provided at the end of the light guide path of the light guide means for scattered light as described above, and a plurality of other photoelectric conversion elements are further provided above and below the periphery of the reticle toward the reticle. When the element is provided, the ability to detect foreign matter can be further improved.

第7図にこの複数個の光電変換素子の配置例を示しであ
る。第7図において、14μはレチクル5の周縁の上側
、14dは下側に配置された光電変換素子(14μ、1
5d共各8個)である。
FIG. 7 shows an example of the arrangement of the plurality of photoelectric conversion elements. In FIG. 7, 14μ is a photoelectric conversion element (14μ, 1
5d and 8 pieces each).

第6図(a)及び(e)よシ明らかなように散乱光21
の導光手段に導かれるものは一部のものに限定される。
As is clear from FIGS. 6(a) and (e), the scattered light 21
What can be guided by the light guide means is limited to some things.

其他のものはコンデンサレンズ4とレチクル50間又は
レチクル5の下側より四囲に散乱してしまう。この実施
例においては、これらの散乱光を光電変換素子1゛4μ
又は14dが受光することができる。
Others are scattered between the condenser lens 4 and the reticle 50 or from below the reticle 5 to the surrounding area. In this example, these scattered lights are converted to a photoelectric conversion element 1゛4μ.
Or 14d can receive light.

光電変換素子、14μ及び14dよりの出力は、第8図
に示すように、抵抗Rで電圧に変換され、利得回路40
で加算され、二値化回路51でV、と比較され、voよ
り大なるときは表示回路に信号が送られる。
The outputs from the photoelectric conversion elements 14μ and 14d are converted to voltage by a resistor R, as shown in FIG.
and is compared with V in the binarization circuit 51, and when it is greater than vo, a signal is sent to the display circuit.

光電変換素子15.14μ、14dよりの信号処理の原
レチクル5上をレーザスボッ) 20aがX方向に走査
されている状態を図化したもので、中段及び下段の線図
は上段の固止横軸のt(時刻)=X(距離)を一致させ
て記載した光電変換素子よりの原信号値及び二値化信号
値の線図である。
This is a diagram showing the state where the original reticle 5 for signal processing from the photoelectric conversion elements 15, 14μ, and 14d is scanned in the X direction. FIG. 2 is a diagram of original signal values and binarized signal values from a photoelectric conversion element in which t (time) = X (distance) of FIG.

レチクル5の下面にはパターン5aが形成されている。A pattern 5a is formed on the lower surface of the reticle 5.

レチクル5に付着した異物を6.6aで示しである。前
述のように、光電変換素子に受光される異物よシの散乱
光による出力は、レーザ光をレチクル5の下面に集光さ
せている(スポットf:20aで示す。)ことより、上
面に付着した10μmの異物のものと、下面に付着した
5μmの異物のものとで同じとなる。6は上面付着で1
0μm以上、下面付着で5pm以上の異物’k、6mは
上面付着で10μm以下、下面付着で5μm以下の異物
を示す。
Foreign matter attached to the reticle 5 is shown at 6.6a. As mentioned above, since the laser beam is focused on the lower surface of the reticle 5 (shown as spot f: 20a), the output due to the scattered light from the foreign object received by the photoelectric conversion element is not attached to the upper surface. The result is the same for the 10 μm foreign matter attached to the bottom surface and the 5 μm foreign matter attached to the bottom surface. 6 is attached to the top surface and 1
Foreign matter 'k' is 0 μm or more, 5 pm or more when attached to the bottom surface, and 6m is a foreign matter of 10 μm or less when attached to the top surface and 5 μm or less when attached to the bottom surface.

レーザスボツ) 20a f上段の図のように移動して
行くと、異物6.6&及びパターン5&の個所で散  
)乱光が発生し、光電変換素子がこれを受光し、中段の
線図のように出力(電圧変換vk)する。出力値をVで
示しである。そこで上面10μm1下面5μmの異物よ
りの散乱光を受光した場合の光電変換素子の出力Voを
設定値としておくときは、二値化回路51で異物6m、
パターン5aのエツジからの散乱光による光電変換素子
の出力は二値化されず、異物6からの散乱光による出力
のみが二値化され、表示回路52で異物の存在が表示さ
れる。
20a f As you move as shown in the upper diagram, foreign objects will be scattered at the locations of 6.6& and pattern 5&.
) Scattered light is generated, the photoelectric conversion element receives it, and outputs it (voltage conversion vk) as shown in the middle diagram. The output value is indicated by V. Therefore, when setting the output Vo of the photoelectric conversion element when receiving scattered light from a foreign object with a length of 10 μm on the upper surface and 5 μm on the lower surface as a set value, the binarization circuit 51 uses a foreign object of 6 m,
The output of the photoelectric conversion element due to the scattered light from the edges of the pattern 5a is not binarized, but only the output due to the scattered light from the foreign object 6 is binarized, and the presence of the foreign object is displayed on the display circuit 52.

第6図に示す補助レンズ60と、第7図に示すレチクル
5の上側及び下側の光電変換素子14N、 14dを併
せて使用するときは、本発明の装置の検出感度が更に向
上することは勿論でめる。以上、本発明の装置を縮小投
影式露光装置に装着した場合について説明したが、1:
1露元装置、ホトリピータ等の他の露光装置においても
同様に適用出来ることは言うまでもない。
When the auxiliary lens 60 shown in FIG. 6 and the photoelectric conversion elements 14N and 14d on the upper and lower sides of the reticle 5 shown in FIG. 7 are used together, the detection sensitivity of the apparatus of the present invention can be further improved. Of course you can. Above, we have explained the case where the apparatus of the present invention is installed in a reduction projection type exposure apparatus, but 1:
It goes without saying that the present invention can be similarly applied to other exposure apparatuses such as a single exposure apparatus and a photorepeater.

以上の如く本発明の装置によるときは露光装置に装着し
た状態でレチクル上の異物を自動的に検出することがで
きる。また、強力なレーザ光111−1史用し、適切な
構成をとっているので、優れた異物の検出能を発揮する
ことがτきる。従って、不発4 明の装置を適用することにより、不良ウェハ又は不良マ
スクの製造を著しく減少することができる。
As described above, when the apparatus of the present invention is used, foreign objects on a reticle can be automatically detected while the apparatus is attached to an exposure apparatus. In addition, since the powerful laser beam 111-1 is used and has an appropriate configuration, it is possible to exhibit excellent foreign object detection ability. Therefore, by applying the defective device, the production of defective wafers or defective masks can be significantly reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は縮小投影式露光装置の原理図、第1図(
b)は第1図(a)におけるA部拡大図、第2図はレチ
クルよりの散乱光の発生状況を示す模式図、第5図は本
発明の装置の実施例を示すもので、(a)図は全体の構
成図、(b)図は反射ミラの斜、視図、(C)図は(a
)図におけるA部拡大図、第4図は第6図の装置におけ
るレチクル上のレーザスポットの走査状態の一例を示す
平面図、第5図は第5図の装置の光電変換素子の信号処
理回路図、第6図は本発明の装置の別の実施例の構成図
、第7図は本発明の装置の更に他の実施例におけるレチ
クル上下側の光電変換素子の配置状態を示す平面図(a
図)及び側面図(b図)、WJs図は第7図の光電変換
素子の信号処理回路図、第9図は光電変換素子の信号処
理の原理を示す状態図及び線図である。 1・・・水銀灯、2.4・・・コンデンサレンズ、6・
・、ミラ、5a・・・ダイクロイックミラ、5・・・レ
チクル、5a・・・回路パターン、6.6a・・・異物
、7・・・縮小レンズ、8・・・ウェハ、10・・・レ
ーザビーム変換用レンズ、118111b・・・偏光器
、12・・・反射ミラ、16.14μ、14d・・・光
電変換素子、15・・・干渉フィルタ、16・・・絞り
、20・・・レーザ光、20a・・・レーザ集光スポッ
ト、21.21a・・・レーザ反射散乱光、60・・・
補助レンズ。 代理人 弁理士  秋 本 正 実 第1因(a) 1 第1因(b) 第2図 拓3区 (a) 第3A81(b) 第3図(C) 第4丙 第5図 第6図 第7図(a) も   凸   σ 第8図 第9区 −1,工
Figure 1(a) is a principle diagram of a reduction projection type exposure apparatus;
b) is an enlarged view of part A in FIG. 1(a), FIG. 2 is a schematic diagram showing the generation of scattered light from the reticle, and FIG. ) Figure is the overall configuration diagram, Figure (b) is a perspective view of the reflecting mirror, Figure (C) is the (a)
), Figure 4 is a plan view showing an example of the scanning state of the laser spot on the reticle in the apparatus shown in Figure 6, and Figure 5 is a signal processing circuit of the photoelectric conversion element of the apparatus shown in Figure 5. 6 is a block diagram of another embodiment of the apparatus of the present invention, and FIG. 7 is a plan view (a
), side view (b), and WJs diagram are signal processing circuit diagrams of the photoelectric conversion element in FIG. 7, and FIG. 9 is a state diagram and line diagram showing the principle of signal processing of the photoelectric conversion element. 1...Mercury lamp, 2.4...Condenser lens, 6.
・, Mira, 5a... Dichroic mirror, 5... Reticle, 5a... Circuit pattern, 6.6a... Foreign object, 7... Reduction lens, 8... Wafer, 10... Laser Beam conversion lens, 118111b...Polarizer, 12...Reflection mirror, 16.14μ, 14d...Photoelectric conversion element, 15...Interference filter, 16...Aperture, 20...Laser light , 20a... Laser focused spot, 21.21a... Laser reflected scattered light, 60...
Auxiliary lens. Agent Patent Attorney Tadashi Akimoto Actual 1st cause (a) 1 1st cause (b) Figure 2 Taku 3 (a) Figure 3A81 (b) Figure 3 (C) Figure 4C Figure 5 Figure 6 Fig. 7 (a) also convex σ Fig. 8 Section 9-1,

Claims (1)

【特許請求の範囲】 1、 コンデンサレンズで集光された元でパターンを有
するレチクルを照射し、ウエノ・又はマスク上に塗布さ
れたホトレジスト上にパターンat−結儂させる露光装
置における前記レチクル上の異物の検出装置において、
(a)レーザ光を発生する手段と、(b)前記の露光の
為の光が前記コンデンサレンズに入る前の光路に、誼露
光元と同一方向に前記レーザ光を導入する導光手段と、
(C)該レーザ光をレチクルのパターン面に集光し該面
に集光スポットを形成させる光学手段と、(d)該集光
レーザ光スポットをレチクル全面に亘って走査させる走
査手段と、(e)咳レーザ光がレチクル上の異物に反射
して発生する散乱光を光電変換素子に導く導光手段と、
(f)咳散乱元を導光手段を介して、又は導光手段を介
して及び直接に、受光する光電変換素子と、億)光電変
換素子の出力信号に基き、異物の有無を2頁 判断表示する手段と、より主としてなることを特徴とす
る露光装置のレチクル上の異物検出装置。 2、 前記の散乱光の導光手段が、レーザ光の導入の為
の導光手段、集光の為の光学手段及び走査手段を利用し
て構成され、該散乱光をレーザ光の入射光路を逆に進行
させた後、ミラによシ該元路より正反射光と分離して散
出して、光電変換素子に導光するようにしである特許請
求の範囲第1項の異物検出装置。 五 前記の散乱光の導光手段が、前記のレーザ党集元の
為の光学手段のコンデンサレンズに並置され、咳コンデ
ンサレンズが集光不能の散乱光を光軸に向ける補助レン
ズを有する特許請求の範囲all!!2項の異物検出装
置。 4、 前記光電変換素子が、前記の散乱光の導光手段の
導光路の端末に設けられて偽ると共に、前記レチクルの
周縁の上側と下側に、誼レチクル゛に向けて複数個設け
られている特許請求の範囲第2項又は第6項の異物−出
装置。
[Scope of Claims] 1. A reticle having a pattern is irradiated with light condensed by a condenser lens, and a pattern is formed on the photoresist coated on a photoresist or a mask in an exposure device. In a foreign object detection device,
(a) means for generating laser light; (b) light guiding means for introducing the laser light into an optical path before the light for exposure enters the condenser lens in the same direction as the exposure source;
(C) an optical means for condensing the laser beam onto a patterned surface of the reticle to form a condensed spot on the surface; (d) a scanning means for scanning the condensed laser beam spot over the entire surface of the reticle; e) a light guide means for guiding scattered light generated when the cough laser light is reflected by a foreign object on the reticle to a photoelectric conversion element;
(f) A photoelectric conversion element that receives light from a cough scattering source through a light guiding means or directly through a light guiding means; A device for detecting foreign matter on a reticle of an exposure apparatus, characterized in that it serves as a means for displaying and, more particularly, a device for detecting foreign matter on a reticle of an exposure apparatus. 2. The light guiding means for the scattered light is configured using a light guiding means for introducing the laser beam, an optical means for focusing the light, and a scanning means, and the scattered light is guided along the incident optical path of the laser beam. 2. The foreign object detection device according to claim 1, wherein the foreign object detection device is configured such that after the light travels in the opposite direction, the light is separated from the specularly reflected light from the original path by a mirror and is emitted and guided to a photoelectric conversion element. (5) A patent claim in which the light guiding means for the scattered light is arranged in parallel with the condenser lens of the optical means for concentrating the laser beam, and the condenser lens has an auxiliary lens that directs the scattered light that cannot be focused toward the optical axis. The range of all! ! Foreign object detection device in Section 2. 4. The photoelectric conversion element is provided at the end of the light guide path of the light guide means for the scattered light, and a plurality of photoelectric conversion elements are provided on the upper and lower sides of the periphery of the reticle toward the reticle. A foreign matter removal device according to claim 2 or 6.
JP17898781A 1981-11-10 1981-11-10 Detector for foreign matter on reticle of exposure device Granted JPS5880544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17898781A JPS5880544A (en) 1981-11-10 1981-11-10 Detector for foreign matter on reticle of exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17898781A JPS5880544A (en) 1981-11-10 1981-11-10 Detector for foreign matter on reticle of exposure device

Publications (2)

Publication Number Publication Date
JPS5880544A true JPS5880544A (en) 1983-05-14
JPS6361613B2 JPS6361613B2 (en) 1988-11-29

Family

ID=16058127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17898781A Granted JPS5880544A (en) 1981-11-10 1981-11-10 Detector for foreign matter on reticle of exposure device

Country Status (1)

Country Link
JP (1) JPS5880544A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643539A (en) * 1979-09-19 1981-04-22 Hitachi Ltd Defect inspection device of face plate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643539A (en) * 1979-09-19 1981-04-22 Hitachi Ltd Defect inspection device of face plate

Also Published As

Publication number Publication date
JPS6361613B2 (en) 1988-11-29

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