JPS587885A - Manufacture of semiconductor photodetector - Google Patents
Manufacture of semiconductor photodetectorInfo
- Publication number
- JPS587885A JPS587885A JP56105834A JP10583481A JPS587885A JP S587885 A JPS587885 A JP S587885A JP 56105834 A JP56105834 A JP 56105834A JP 10583481 A JP10583481 A JP 10583481A JP S587885 A JPS587885 A JP S587885A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- guard ring
- compound semiconductor
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims abstract 6
- 230000031700 light absorption Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 abstract description 3
- 229910001423 beryllium ion Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、ガード・リングを有する半導体受光装置を製
造する方法の改ｊＬＫ関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a modified method for manufacturing a semiconductor light receiving device having a guard ring.
従来、この種の半導体受光装置として第１図に見られる
ものが知られている。Conventionally, the one shown in FIG. 1 has been known as this type of semiconductor light receiving device.
図に於いて、１は％＋型Ｉ％Ｐ基板、２はＣ型１ｍにｍ
ＪＩｚＰ光吸収層、３は外−型１ｓＰガード・リング形
成層、４は％ＷＩ％Ｐ倍増層、５はｐ型不純物領域、Ａ
は受光部、Ｇはガード・リング部をそれぞれ示している
。伺、主な層の不純物濃度を例示すると、
光吸収層２ ： ８ Ｘ （Ｏ” （ｃｍ−畠〕ガード
・リング形成層３ ： ８Ｘ １０” ｌ：ｃ＋ｍ−’
）増倍層４ ：’ ２ Ｘ １０” （ｅ＋ｍ−’）で
ある。In the figure, 1 is a %+ type I%P substrate, 2 is a C type 1 m
JIzP light absorption layer, 3 is an outer-type 1sP guard ring forming layer, 4 is a %WI%P doubling layer, 5 is a p-type impurity region, A
1 indicates a light receiving section, and G indicates a guard ring section. To give an example of the impurity concentration of the main layers, light absorption layer 2: 8X (O" (cm-Hatake) Guard ring forming layer 3: 8X 10"l:c+m-'
) Multiplier layer 4: ' 2 X 10''(e+m-').
ところで、図示の装置を製造するには、基板１に連続液
相エピタキシャル成長法を適用して光吸収層２、ガード
・リング形成層３、増倍層４を成長させ、次いで、増倍
層４をメサ・エツチングして図示の如き形状となし、次
いで、例えばカドオウム（ｃｄ）を気相拡散してｐｍ不
純物領域５を形成するようＫしている。即ち、Ｃｄの拡
散に依シ増倍層４に増倍作用をするｐ−ｎ ８合を形成
するとともにガード・リング形成層３に於いてはキャリ
ヤ密度を減少させガード・リング部Ｇの耐圧を向上させ
るようにしている。By the way, in order to manufacture the illustrated device, a continuous liquid phase epitaxial growth method is applied to a substrate 1 to grow a light absorption layer 2, a guard ring forming layer 3, and a multiplication layer 4, and then the multiplication layer 4 is grown. Mesa etching is performed to form the shape as shown in the figure, and then, for example, cadmium (CD) is vapor phase diffused to form a PM impurity region 5. That is, depending on the diffusion of Cd, a pn 8 coupling is formed which has a multiplication effect on the multiplication layer 4, and at the same time, the carrier density is reduced in the guard ring forming layer 3, and the withstand voltage of the guard ring portion G is increased. I'm trying to improve it.
しかしながら、この従来技術では、ガード・リング部Ｇ
Ｋ於けるキャリヤ密度を８ Ｘ １０” 〔ｏｘ−”）
以下にすることは困難であシ、ガード・リング部Ｇの耐
圧向上に限界がおった。However, in this prior art, the guard ring portion G
The carrier density at K is 8 x 10” [ox-”]
It was difficult to do the following, and there was a limit to the improvement in pressure resistance of the guard ring portion G.
本発明は、増倍層にｐ−ｎ接合を形成するとともにガー
ド・リング部に於けるキャリヤ密度を低下させる為のｐ
ＴＩｌ不純物の種類を適切に選択し、且つ、それをイオ
ン注入法を適用して打ち込むことに依シガー）°・リン
グ部の耐圧を大幅に向上させようとするものであυ、以
下これを詳細に説明する。The present invention provides a p-n junction in the multiplication layer and a p-n junction for reducing the carrier density in the guard ring part.
The aim is to significantly improve the withstand voltage of the ring part by appropriately selecting the type of TIl impurity and implanting it using the ion implantation method.This will be explained in detail below. Explain.
本発明に依って得られる装置の構造は第１図に示したも
のと同じであるが、増倍層４にｐ−ｎ接合を形成し、′
ｔた、ガード・リンク部Ｇにｐ−ｎ接合を形成する為の
ｐ型不純物としてベリリウム（Ｂ＃）を使用する。The structure of the device obtained according to the invention is the same as that shown in FIG. 1, except that a pn junction is formed in the multiplication layer 4, and
Additionally, beryllium (B#) is used as a p-type impurity to form a p-n junction in the guard link portion G.
即ち、第１図について説明した工程を経て図示の形状と
なし、次いで、Ｂ＃＋を加速エネルギ１４０（ｆｇＦ）
、ドーズ量Ｉ Ｘ １０” （ｅｓ−”：ｌとして注入
し、次いで、窒素雰囲気中にて温度７５０ （℃）で時
間２０ω〕の熱処理を行なう。これに依シ、第１図に見
られるよりなｐ＋型層が形成される。That is, the shape shown in the figure is formed through the process explained in connection with FIG.
, at a dose of I.times. A p+ type layer is formed.
このｐ型層の存在で、ｐ−ｎ接合近傍のキャリヤ密度は
Ｂ＃の補償効果に依って第２８図（ロ）、（６） Ｋ見
られるような分布となるもの′ｃある。Due to the presence of this p-type layer, the carrier density near the p-n junction has a distribution as shown in FIGS. 28(b) and (6) K due to the compensation effect of B#.
第２図（ロ）は受光部Ａに於ける分布を表わす線図、第
２図（６）はガード・リング部Ｇに於ける分布を表わす
線図をそれぞれ示している。FIG. 2(B) shows a diagram showing the distribution in the light receiving part A, and FIG. 2(6) shows a diagram showing the distribution in the guard ring part G.
いずれの図に於いても、実線はＢ−注入後のホール密度
、１点鎖線は同じ（Ｉｈ＋注入後の電子密度、破線はＢ
−“注入前の電子密度をそれぞれ示すものである。In both figures, the solid line is the hole density after B- injection, the dashed line is the same (electron density after Ih+ injection, and the broken line is B
−“Indicates the electron density before injection.
このように、Ｂ−イオンを注入してガード・リング形成
層３にｐ＋型層を形成することに依シ、その下側の１型
層に於けるキャリヤ密度は減少し、ガード・リング部Ｇ
としての耐圧は大になる。In this way, by implanting B- ions to form a p+ type layer in the guard ring forming layer 3, the carrier density in the type 1 layer below it decreases, and the guard ring portion G
As a result, the pressure resistance increases.
第６図はＢ＃＋を注入して形成したｒ型層のキャリヤ密
度と表面からの距離との関係を表わす線図でおる。FIG. 6 is a diagram showing the relationship between carrier density and distance from the surface of an r-type layer formed by implanting B#+.
このデータを得た条件は次の通シである。The conditions for obtaining this data are as follows.
イオン注入対象：ｎ−型１ｍＰ基板Ｒ＝４Ｘ１０”（ａ
ｍ−り注入イオン：Ｂ＃＋
ドーズ量： Ｉ Ｘ １０” Ｃｅ講４〕アニール時間
：２０〔分〕
雰囲気二Ｎｌ
活性化率： ６０ （−）
アニール温度７５０ （Ｃ）にテ％ｚ ： ｓ、ｏｘ
１０” ［：ａｍ−”）アニール温度７００ （Ｃ）
Ｋて％＃ ： Ｓ’、２ Ｘ １０” （ａｍ−”）ア
ニール温度６５０ ＣＣ）にて外ＪＦ ： ９．６Ｘ
１０” 〔ｅｘ−”〕同、％Ｉは表面濃度、Ｘｊは接合
深さ
である。Ion implantation target: n-type 1mP substrate R = 4X10" (a
Re-implanted ion: B#+ Dose: I x 10" Ce course 4] Annealing time: 20 [minutes] Atmosphere 2Nl Activation rate: 60 (-) Annealing temperature 750 (C) %z: s , ox
10” [:am-”) Annealing temperature 700 (C)
K%#: S', 2 x 10"(am-") annealing temperature 650 CC) outside JF: 9.6X
10"[ex-"] Same, %I is the surface concentration and Xj is the junction depth.
以上の説明で判るように、本発明に依れば、半導体受光
装置に於けゐ受光部及びガード・リング部のｐ−ｎ接合
を形成するに際し、ｐＨｉ不純物としてＢ−を使用し、
イオン注入法にて深く打ち込むことに依シ、従来技術で
形成したガード・リング形成層に於けるキャリヤ密度を
更に減少させることができるから、ガード・リング部の
耐圧を向上することができる。As can be seen from the above description, according to the present invention, B- is used as a pHi impurity when forming a p-n junction in a light receiving part and a guard ring part in a semiconductor light receiving device.
By deeply implanting ions using the ion implantation method, the carrier density in the guard ring forming layer formed by the conventional technique can be further reduced, so that the withstand voltage of the guard ring portion can be improved.
第１図は半導体受光装置の要部説明図、第２図はキャリ
ヤ分布を表わす線図、第３図はＩｎ基板のｐ＋型層に於
けるキャリヤ分布を表りす線図である。
図に於いて、１は基板、２は光吸収珊、３はガード・リ
ング形成層、４は増倍層である。
特許出願人 富士通株式会社FIG. 1 is an explanatory diagram of the main part of a semiconductor light receiving device, FIG. 2 is a diagram showing carrier distribution, and FIG. 3 is a diagram showing carrier distribution in the p+ type layer of an In substrate. In the figure, 1 is a substrate, 2 is a light absorbing coral, 3 is a guard ring forming layer, and 4 is a multiplication layer. Patent applicant Fujitsu Limited
Claims (1)
層及び化合−半導体からなる外−型ガード・リング形成
層及び化合物半導体からなる謡型増倍層を順次形成し、
次いで、前記％型増倍層をメサ状にエツチングしてから
ベリリウムを導入して前記５ｉｌｌ増倍層及び前記％−
型ガード・リング形成層内Ｋ ｐ−ｓ接合を形成する工
程を含んでなることを特徴とする半導体受光装置の製造
方法。sequentially forming on a semiconductor substrate an n-type light absorption layer made of a quaternary compound semiconductor, an outer-type guard ring forming layer made of a compound semiconductor, and a song-type multiplication layer made of a compound semiconductor;
Next, the %-type multiplication layer is etched into a mesa shape, and beryllium is introduced to form the 5ill multiplication layer and the %-type multiplication layer.
1. A method of manufacturing a semiconductor light receiving device, comprising the step of forming a K ps junction in a mold guard ring forming layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56105834A JPS587885A (en) | 1981-07-06 | 1981-07-06 | Manufacture of semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56105834A JPS587885A (en) | 1981-07-06 | 1981-07-06 | Manufacture of semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS587885A true JPS587885A (en) | 1983-01-17 |
Family
ID=14418064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56105834A Pending JPS587885A (en) | 1981-07-06 | 1981-07-06 | Manufacture of semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS587885A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810511U (en) * | 1981-07-13 | 1983-01-24 | シルバ−工業株式会社 | Wick for combustion appliances |
-
1981
- 1981-07-06 JP JP56105834A patent/JPS587885A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810511U (en) * | 1981-07-13 | 1983-01-24 | シルバ−工業株式会社 | Wick for combustion appliances |
| JPS5913448Y2 (en) * | 1981-07-13 | 1984-04-21 | シルバ−工業株式会社 | Wick for combustion appliances |
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