JPS5873116A - X-ray exposure device - Google Patents

X-ray exposure device

Info

Publication number
JPS5873116A
JPS5873116A JP56171397A JP17139781A JPS5873116A JP S5873116 A JPS5873116 A JP S5873116A JP 56171397 A JP56171397 A JP 56171397A JP 17139781 A JP17139781 A JP 17139781A JP S5873116 A JPS5873116 A JP S5873116A
Authority
JP
Japan
Prior art keywords
mask
chamber
cover
ray
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56171397A
Other languages
Japanese (ja)
Other versions
JPS6156612B2 (en
Inventor
Yoshihiro Yoneyama
米山 義弘
Motoya Taniguchi
素也 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56171397A priority Critical patent/JPS5873116A/en
Publication of JPS5873116A publication Critical patent/JPS5873116A/en
Publication of JPS6156612B2 publication Critical patent/JPS6156612B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Radiography Using Non-Light Waves (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To miniaturize an X-ray generating device and to shorten exposure time by a method wherein a cover airtightly connected to a chamber is provided and airtight space formed by the chamber and cover is simultaneously replaced from the air to He. CONSTITUTION:In a cover 30, a recessed section 31 forming a space covering a mask 9 is formed at the center and an O ring 32 is provided at the outside circumference of the opening section. After mounting a mask 9 on a holding member 6, the cover 30 is fixed to the member 6 by a bolt 36 and a pipe 33 is connected to a pipe 20 by a flange 34. Next, valves 21, 23, 25 are opened to operate a vacuum generating source 24 and the inside of a chamber 7 and that of the cover 30 are maintained in vacuous condition. Next, the valve 23 is closed and a valve 22 is opened and He is supplied to a chamber 7 and the cover 30 from an He supplying source 25. When a predetermined amount of He is supplied, the valves 21, 22, 25 are closed, the flange 34 is separated, the bolt 36 and the cover 30 are removed. Next, a wafer 14 is positioned under the mask 9 by moving a table and an X ray is generated by operating an electron gun 1.

Description

【発明の詳細な説明】 本発明は、高密度集積回路の製造工程でマスクに形成さ
れたパターンをウエノ・の表面に塗布されたレジスト被
膜に転写する際にX線を使用するX線m元装置に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an X-ray source that uses X-rays when transferring a pattern formed on a mask to a resist film applied to the surface of a wafer in the manufacturing process of high-density integrated circuits. It is related to the device.

X線篇党装置の露光方式には真空中露光と大気中露光が
一般的に考えられている。真空中露光とは、マスク・ウ
ェハを共にX線発生源のある真空室内に入れて露光する
方式で、X線源とマスクφウェハ関が真空で何もさえぎ
るものがないため、比較的小容量のX線源で艮いなどの
長所がある反面、マスクとウエノ・のアライメント機構
を真空室内に内蔵することが難しい、歩留が悪いなどの
問題がおる。
Vacuum exposure and atmospheric exposure are generally considered to be the exposure methods for X-ray equipment. Vacuum exposure is a method in which the mask and wafer are placed in a vacuum chamber with an X-ray source for exposure, and since there is no obstruction between the X-ray source and the mask φ wafer in a vacuum, the volume is relatively small. Although this method has advantages such as the ability to use an X-ray source, it also has problems such as difficulty in incorporating a mask-to-wafer alignment mechanism in a vacuum chamber and poor yield.

このため最近ではウエノ・を大気中において露光を行な
う大気中m元が一般的となって来ている。
For this reason, in recent years, exposure has become common in the atmosphere, in which Ueno is exposed in the atmosphere.

人気露光方式では、波長5〜十数λ程度の軟X線を用い
る。X線源を真空中において、次にヘリウム家郷軟X線
を通しやすいガス室を通して、そのガス室の一端にマス
クを付けて、これに近接(10μm±1μ)してアライ
メントしたウエノ1にこのマスクを通してX線を照射す
るようになっている。
A popular exposure method uses soft X-rays with a wavelength of about 5 to about 10-odd λ. Place the X-ray source in a vacuum, then pass it through a gas chamber that allows soft X-rays to pass through. A mask is attached to one end of the gas chamber, and this mask is placed on Ueno 1, which is aligned close to this (10 μm ± 1 μ). It is designed to irradiate X-rays through the

このため吸収されやすい軟X縁をウェハに効率良く照射
するためには真空室とヘリウム室の区切にあるベリリウ
ム窓、ヘリウム、マスクなどを軟X線の透過し易い材質
、厚さのもので作る必要、がある。
Therefore, in order to efficiently irradiate the wafer with soft X-rays that are easily absorbed, the beryllium window, helium, mask, etc. that separate the vacuum chamber and helium chamber should be made of materials and thicknesses that allow soft X-rays to easily pass through. There is a need.

X線露光装置は、九とえば、第1図に示すような構成に
なっている。すなわち、電子銃1とターゲット2および
発生し九X線を透過するぺIJ IJウム製の窓3を備
えたX線発生装置4と、X線発生装fi114の下に、
気密固定されたベローズ5と、このベローズ5の下端に
気密支持された保持部材6とを備えたチャンバ7と、前
記保持部材6の下面に気密固定されるマスクホルダ8に
保持されたマスク9と、ペース12上にボールガイド1
5を介して、マスク11の下方の露光位置とウェハ14
を着脱する操作位置との間を往復移動可能に支持す11
.たYステージ15に、ボールガイド16を介しYステ
ージ15と直角方向に移動可能に支持され2xステージ
17およびこのXステージ17に回転自在に支持された
0ステージ18から成り、θステージ18上にウェハ1
4を載置するようにしたテーブル19と、前記チャンバ
9の内部と連通するパイプ20とこのパイプ20に中間
部に設けられた弁21,22.23を介してチャンバ9
に接続された真空発生源24とヘリウム供給源25を備
えている。
An X-ray exposure apparatus has a configuration as shown in FIG. 1, for example. That is, below the electron gun 1, the target 2, the X-ray generator 4 equipped with a window 3 made of plastic that transmits the generated X-rays, and the X-ray generator fi114,
A chamber 7 includes a bellows 5 that is hermetically fixed, a holding member 6 that is airtightly supported at the lower end of the bellows 5, and a mask 9 that is held in a mask holder 8 that is airtightly fixed to the lower surface of the holding member 6. , ball guide 1 on pace 12
5 to the exposure position below the mask 11 and the wafer 14
11
.. The 2x stage 17 is supported on the Y stage 15 via a ball guide 16 so as to be movable in a direction perpendicular to the Y stage 15, and the 0 stage 18 is rotatably supported on the X stage 17. 1
A pipe 20 communicating with the inside of the chamber 9 and valves 21, 22, and 23 provided in the middle of the pipe 20 connect the chamber 9 to the chamber 9.
A vacuum generation source 24 and a helium supply source 25 are provided.

上記構成において、たとえば、ベリリウム窓3の厚さを
25μm1ペリウム窓3からマスク9までの距離を約3
00mmマスク9を厚さ2μmのアルミナをベースとし
て所要のパターンを金メッキし次ものを用いた場合、各
部のX線の透過率は、90%、96慢、70%となり、
ウェハ14上に到達するX41は約60チになる。し九
がって、X線の透過率を同上させるには、マスク9をさ
らに薄くすることが一要求される。
In the above configuration, for example, the thickness of the beryllium window 3 is 25 μm, the distance from the perium window 3 to the mask 9 is approximately 3
When the 00mm mask 9 is made of 2μm thick alumina as a base and the required pattern is plated with gold and the following is used, the X-ray transmittance of each part is 90%, 96%, 70%,
The length of X41 that reaches the wafer 14 is approximately 60 inches. Therefore, in order to increase the X-ray transmittance, it is necessary to make the mask 9 even thinner.

しかし、マスク9を薄くすると、チャンバ7内を大気か
らヘリウムに置換する際、チャンバ7内を真空にすると
、マスク9の上下に圧力差が生じ、マスク9に大きな力
が作用し、第1図に示すように、マスク9を変形させる
ことになる。そして、マスク9の変形は、チャンバ7円
にヘリウムを供給したのちも永久変形として残ったり、
あるいは、マスク9に形成したパターンの歪として残り
、微細なパターンの転写ができなくなるなど重大な欠点
となる。このため、従来はX線の透過率を路しても、マ
スク9の強度を確保するために、マスク9の厚さを10
〜10数μmとし、ウエノ1に到達するX線の不足分は
X線発生装置4の大型化、あるいは、露光時間を長くし
て補なっていた。
However, if the mask 9 is made thinner, when the chamber 7 is evacuated when the atmosphere is replaced with helium, a pressure difference will be created between the top and bottom of the mask 9, and a large force will be applied to the mask 9, as shown in FIG. The mask 9 is deformed as shown in FIG. The deformation of the mask 9 remains as a permanent deformation even after helium is supplied to the chamber 7.
Alternatively, the distortion remains in the pattern formed on the mask 9, resulting in serious drawbacks such as the inability to transfer fine patterns. For this reason, conventionally, in order to ensure the strength of the mask 9 even if the X-ray transmittance is reduced, the thickness of the mask 9 has been increased to 10
~10-odd micrometers, and the shortage of X-rays reaching Ueno 1 was compensated for by increasing the size of the X-ray generator 4 or by lengthening the exposure time.

本発明の目的は、上記し次従来技術の欠点をなくシ、チ
ャンバ内を大気からヘリウムに置換する際に、マスクを
変形させることなく置換し得るようにしたX線露光装置
を提供するにある。
SUMMARY OF THE INVENTION It is an object of the present invention to eliminate the above-mentioned drawbacks of the prior art and to provide an X-ray exposure apparatus that can replace the atmosphere in a chamber with helium without deforming the mask. .

上記目的を達成するため、本発明においては、チャンノ
、(に気密固定し得るカバーを設け、チャンバ内の大気
とヘリウムの置換の際に、前記カッ(−をマスクを覆う
ようにチャンバに取付け、チャンバとの間にマスクを榎
う気密空間を作シ、この気密空間をチャンバと連通させ
るようにしたことを%徴とする。
In order to achieve the above object, the present invention provides a cover that can be airtightly fixed to the chamber, and when replacing the atmosphere and helium in the chamber, the cup (- is attached to the chamber so as to cover the mask, A characteristic feature is that an airtight space is created between the mask and the chamber, and this airtight space is communicated with the chamber.

以下、本発明の一実施例を図面にしたがって説明する。An embodiment of the present invention will be described below with reference to the drawings.

第2図は本発明の一実施例を示すもので、同図において
、第1図と同じものは、第1図と同じ符号を付けて示し
である。カバー50は、中央にマスク9を覆う空間を形
成する凹部51が形成され、その開口部の外周には0す
/グ62が取付けられている。また、前記凹部31には
パイプ33が連通し、フランジ34および弁35を介し
てパイプ20と接続されている。前記カバ31は、ボル
ト36で保持部材6に固定される。
FIG. 2 shows an embodiment of the present invention, and in this figure, the same parts as in FIG. 1 are designated by the same reference numerals as in FIG. 1. The cover 50 has a recess 51 formed in the center thereof to form a space for covering the mask 9, and a zero plate 62 is attached to the outer periphery of the opening. Further, a pipe 33 communicates with the recess 31 and is connected to the pipe 20 via a flange 34 and a valve 35. The cover 31 is fixed to the holding member 6 with bolts 36.

上記構成において、保持部材6にマスク9を取付は次の
ち、カバー30を保持部材6にボルト36で固定し、さ
らに7ランジ34で、パイプ33をパイプ20に接続す
る。ついで、弁21. 25゜35を開き、真空発生源
24を作動させ、チャンバ7とカバー30の中を真空に
する。ついで、弁23を閉じて、弁22.を開き、ヘリ
ウム供給源25カラヘリウムをチャンバ7およびカバー
30へ供給する。所定量のヘリウムが供給されたのち、
弁21.22.35を閉じ、フランジ34を切離すと共
に、ボルト36を外してカバー50を取除く。
In the above structure, after attaching the mask 9 to the holding member 6, the cover 30 is fixed to the holding member 6 with bolts 36, and the pipe 33 is connected to the pipe 20 with the 7 langes 34. Next, valve 21. 25° 35 is opened and the vacuum source 24 is activated to create a vacuum inside the chamber 7 and the cover 30. Then, valve 23 is closed and valve 22. The helium supply source 25 supplies calahelium to the chamber 7 and the cover 30. After a predetermined amount of helium is supplied,
Close the valves 21, 22, 35, disconnect the flange 34, remove the bolts 36 and remove the cover 50.

この状態でテーブル19を移動市せ、マスク9の下にウ
ェハ14を位置決めする。そして、位置決めが終ると、
電子銃1が作動してX線を発生させ、露光を行なう。
In this state, the table 19 is moved and the wafer 14 is positioned under the mask 9. Then, once the positioning is complete,
The electron gun 1 operates to generate X-rays and perform exposure.

上記において、チャンバ7内の大気をヘリウムに置換す
る際、マスク9の下面側にも気密空間を設け、チャンバ
7と同時に排気およびヘリウムの供給を行なうようにし
たので、マスク9の上下に圧力差が生じないため、上下
の圧力差によるマスク9のf珍を防止することができる
In the above, when replacing the atmosphere in the chamber 7 with helium, an airtight space was also provided on the bottom side of the mask 9, and the chamber 7 was evacuated and helium was supplied at the same time, so there was a pressure difference between the top and bottom of the mask 9. Since this does not occur, it is possible to prevent the mask 9 from becoming distorted due to the pressure difference between the upper and lower sides.

以上述べた如く、本発明によれば、チャンバに保持され
たマスクを覆うようにチャンバに気密結合されるカバー
を設はチャンバとカバーによって形成される気密空間と
を同時に大気からヘリウムに置換するようにし友ので、
マスク上下の圧力差が発生せず、マスクの変形を防止す
ることができる。また、ガス交換時にマスクを変形させ
る心配がないので、マスクを薄くすることができる。ま
友、マスクによるX@の吸収を少くし、X線発生装置1
に小型にすることができる。さらに露光時間も短縮する
ことができるなどの効果がある。
As described above, according to the present invention, the cover is hermetically coupled to the chamber so as to cover the mask held in the chamber, and the atmosphere is replaced with helium at the same time in the airtight space formed by the chamber and the cover. Because I'm a friend,
No pressure difference occurs between the top and bottom of the mask, and deformation of the mask can be prevented. Furthermore, since there is no need to worry about the mask being deformed during gas exchange, the mask can be made thinner. Mayu, reduce the absorption of X@ by the mask, X-ray generator 1
It can be made smaller. Furthermore, there are effects such as being able to shorten the exposure time.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、従来のX線露光装置の正面部分断面図、第2
図は、本発明によるX線露光装置の正面部分断面図であ
る。
Figure 1 is a front partial cross-sectional view of a conventional X-ray exposure device;
The figure is a front partial sectional view of an X-ray exposure apparatus according to the present invention.

Claims (1)

【特許請求の範囲】[Claims] X*を発生させるX線発生装置と、このX@発生装置の
下方に気密結合され、下端にマスクを保持するチャンバ
と、前記チャンバ内を空気からヘリウムに置換するガス
置換装置と、前記マスクの下方の露光位置とウェハを着
脱する操作位置との間をウェハを載置して往復移動する
テーブルとを設けたX@露光装置において、前記チャン
バの下面に、前記マスクを覆い、マスクの周囲に気密空
間を形成するように着脱可能に配置され、かつ、気密空
間が前記チャンバと連通するようにしたカバーを設け、
マスク交換時に、チャンバにマスクを取付は次のち、カ
バーを取付け、チャンバとカバー内部を同時にヘリウム
に置換したのち、カバーを取外すようにしたことを特徴
とするxIIiIjI元装置。
an X-ray generator that generates X*; a chamber that is hermetically coupled below the X@ generator and holds a mask at its lower end; a gas replacement device that replaces air in the chamber with helium; In an X@exposure apparatus, which is provided with a table that carries a wafer and moves back and forth between a lower exposure position and an operation position for loading and unloading the wafer, the lower surface of the chamber is covered with the mask, and the periphery of the mask is providing a cover that is removably arranged to form an airtight space and communicates the airtight space with the chamber;
xIIiIjI original device characterized in that when replacing the mask, the mask is attached to the chamber, the cover is attached after that, and the inside of the chamber and the cover are replaced with helium at the same time, and then the cover is removed.
JP56171397A 1981-10-28 1981-10-28 X-ray exposure device Granted JPS5873116A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56171397A JPS5873116A (en) 1981-10-28 1981-10-28 X-ray exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56171397A JPS5873116A (en) 1981-10-28 1981-10-28 X-ray exposure device

Publications (2)

Publication Number Publication Date
JPS5873116A true JPS5873116A (en) 1983-05-02
JPS6156612B2 JPS6156612B2 (en) 1986-12-03

Family

ID=15922394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56171397A Granted JPS5873116A (en) 1981-10-28 1981-10-28 X-ray exposure device

Country Status (1)

Country Link
JP (1) JPS5873116A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178660A2 (en) * 1984-10-19 1986-04-23 Hitachi, Ltd. X-ray exposure apparatus
JPS61104619A (en) * 1984-10-29 1986-05-22 Fujitsu Ltd X-ray exposure apparatus
JPS62237727A (en) * 1986-04-09 1987-10-17 Hitachi Ltd Mask for x-ray exposure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178660A2 (en) * 1984-10-19 1986-04-23 Hitachi, Ltd. X-ray exposure apparatus
JPS61104619A (en) * 1984-10-29 1986-05-22 Fujitsu Ltd X-ray exposure apparatus
JPS62237727A (en) * 1986-04-09 1987-10-17 Hitachi Ltd Mask for x-ray exposure
JPH0588534B2 (en) * 1986-04-09 1993-12-22 Hitachi Ltd

Also Published As

Publication number Publication date
JPS6156612B2 (en) 1986-12-03

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