JPH0588534B2 - - Google Patents

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Publication number
JPH0588534B2
JPH0588534B2 JP7991486A JP7991486A JPH0588534B2 JP H0588534 B2 JPH0588534 B2 JP H0588534B2 JP 7991486 A JP7991486 A JP 7991486A JP 7991486 A JP7991486 A JP 7991486A JP H0588534 B2 JPH0588534 B2 JP H0588534B2
Authority
JP
Japan
Prior art keywords
ray
mask
rays
membrane
ray exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP7991486A
Other languages
Japanese (ja)
Other versions
JPS62237727A (en
Inventor
Yukio Kenbo
Minoru Ikeda
Ryuichi Funatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61079914A priority Critical patent/JPS62237727A/en
Publication of JPS62237727A publication Critical patent/JPS62237727A/en
Publication of JPH0588534B2 publication Critical patent/JPH0588534B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔産業上の利用分野〕 本発明は、マスクチヤツクに着脱自在に(取替
え可能に)装着されるX線露光用マスクにおいて
メンブレン上に異物が付着されないようにして異
物が被露光基板上に露光されるのを防止したX線
露光装置およびその方法を提供することにある。 〔従来の技術〕 従来のX線露光装置に使用されるX線露光用マ
スクは、特公昭53−24785号公報に記載のように
枠材にX線マスク支持下層(以下メンブレンと称
す)を張り、メンブレンにパターンを形成してい
た。 〔発明が解決しようとする問題点〕 上記従来技術は、X線露光用マスクのメンブレ
ン又はマスクパターンへの異物付着について配慮
がされておらず、露光時の歩留り低下(特にステ
ツパでは歩留りが零近くになる)及び異物洗浄に
よるマスクが劣化するという課題を有していた。 本発明の目的は、上記従来技術の課題を解決す
べく、X線を減衰させないX線透過気体が満たさ
れた雰囲気チヤンバのX線の出射端に設けられた
マスクチヤツクに着脱自在に装着されるX線露光
用マスクのメンブレン上への異物の付着を防止し
て被露光基板に上記異物が露光転写されるのを防
止してX線露光において歩留まり向上をはかると
共にX線の減衰を防止して高解像度で高速度でX
線露光を実現でき、更にX線露光用マスクの洗浄
回数を低減してX線露光用マスクの耐用期間(寿
命)の増大をはかるようにしたX線露光装置およ
びその方法を提供することにある。 〔問題点を解決するための手段〕 本発明は、上記目的を達成するために、X線源
を設け、該X線源からのX線を透過窓を通して入
射され、X線を減衰させないX線透過気体が満た
された雰囲気チヤンバを設け、該雰囲気チヤンバ
のX線の出射端に設けられたマスクチヤツクを設
け、回路パターンを形成したメンブレンの周囲の
被露光基板と反対のマスクチヤツク側の面を支持
枠で支持して、前記メンブレンに対して被露光基
板と反対のマスクチヤツク側に所望の距離離して
X線を透過する薄膜を設けて該薄膜とメンブレン
との間の空間内に異物が入り込まないように外気
に対し密閉させ、更に前記空間内にX線を減衰さ
せないX線透過気体を満たして構成したX線露光
用マスクを前記マスクチヤツクに装着し、前記X
線源からのX線を前記透過窓を通して前記雰囲気
チヤンバに入射されて前記雰囲気チヤンバを通し
て照射されたX線を前記マスクチヤツクに装着さ
れたX線露光用マスクの薄膜を通して異物が存在
しないで且つX線を減衰させないX線透過気体を
満たした空間を通してメンブレンに照射して該メ
ンブレン上に形成された回路パターンを該X線露
光用マスクの回路パターンに対して微小間隙形成
して対向配置された被露光基板上に露光転写する
ように構成したことを特徴とするX線露光装置で
ある。また本発明は、前記X線露光装置におい
て、前記X線露光用マスクを、前記X線透過気体
を封入した状態で前記マスクチヤツクに装着する
ように構成したことを特徴とする。また本発明
は、前記X線露光装置における前記X線露光用マ
スクにおいて、前記薄膜を張設した枠を前記支持
枠に接着して取付けて構成したことを特徴とす
る。また本発明は、回路パターンを形成したメン
ブレンの周囲の被露光基板と反対のマスクチヤツ
ク側の面を支持枠で支持して、前記メンブレンに
対して被露光基板と反対のマスクチヤツク側に所
望の距離離してX線を透過する薄膜を設けて該薄
膜とメンブレンとの間の空間内に異物が入り込ま
ないように外気に対し密閉させ、更に前記空間内
にX線を減衰させないX線透過気体を満たして構
成したX線露光用マスクを準備し、該準備された
X線露光用マスクを、入射側に透過窓を有してX
線を減衰させないX線透過気体が満たされた雰囲
気チヤンバのX線の出射端に設けられたマスクチ
ヤツクに装着し、X線源からのX線を前記透過窓
を通して前記雰囲気チヤンバに入射されて前記雰
囲気チヤンバを通して照射されたX線を前記マス
クチヤツクに装着されたX線露光用マスクの薄膜
を通して異物が存在しないで且つX線を減衰させ
ないX線透過気体を満たした空間を通してメンブ
レンに照射して該メンブレン上に形成された回路
パターンを該X線露光用マスクの回路パターンに
対して微小間隙形成して対向配置された被露光基
板上に露光転写することを特徴とするX線露光方
法である。また本発明は、前記X線露光方法にお
いて、前記X線露光用マスクを、前記X線透過気
体を封入した状態で前記マスクチヤツクに装着す
ることを特徴とする。 〔作用〕 前記構成により、X線を減衰させないX線透過
気体が満たされた雰囲気チヤンバのX線の出射端
に設けられたマスクチヤツクに装着されるX線露
光用マスクを、回路パターンを形成したメンブレ
ンの周囲の被露光基板と反対のマスクチヤツク側
の面を支持枠で支持して、前記メンブレンに対し
て被露光基板と反対のマスクチヤツク側に所望の
距離離してX線を透過する薄膜を設けて該薄膜と
メンブレンとの間の空間内に異物が入り込まない
ように外気に対し密閉させ、更に前記空間内にX
線を減衰させないHe等のX線透過気体を満たし
て構成したので、メンブレン上への異物の付着を
防止して薄膜上にのみ付着させるようにして薄膜
上の異物を半影ボケあるいは回折効果により被露
光基板上に上記異物が露光転写されるのを防止し
てX線露光において歩留まり向上をはかると共に
X線の減衰を防止して高解像度で高速度でX線露
光を実現でき、更にX線露光用マスクの洗浄回数
を低減してX線露光用マスクの耐用期間(寿命)
の増大をはかることができる。 〔実施例〕 以下、本発明の一実施例を第1図により説明す
る。X線露光用マスクにおいて、マスクメンブレ
ン1を張つたSi枠2及びSi枠2に接着されたバイ
レツクス製支持枠3、支持枠3に両面テープ4で
接着された金属枠5、金属枠5に接着された薄膜
6を基本構成とする。更に金属枠5にはHe注入
用穴7と、金属枠はがし用ネジ8があり、それら
のカバー9がある。又、He注入用穴7の中には
フイルタ10がある。又、Heのドレイン穴11
が支持枠3に設けられており、フタ12がされて
いる。 以上の構成のX線露光用マスクの組立方法及び
作用について以下説明する。クリーンエア内で、
薄膜6を張つた金属枠5を両面テープ4でX線露
光用マスクのバイレツクス枠3に接着する。この
時カバ9フタ12は外されている。別途用意する
He注入装置(当該技術者が容易に設計出来る。
図示せず。)により、He注入穴7からHeガスを
メンブレン1、薄膜6にダメージを与えないよう
徐々に注入する。この時、フイルタ10により異
物の侵入が防がれる。ドレインされたHeと空気
の混合比をモニタして、十分なHe(99%以上程
度)雰囲気が密閉空間13に形成されたら、カバ
ー9及びフタ12をする。組立作業そのものを
Heガス中で行なえばHe注入作業及び注入関係の
構造は不要となる。以上の如く組立てたマスク
は、薄膜6を上にして取扱うのが望ましい。これ
は、異物20が通常上方から付着し、下方からの
自然付着は極めて少ないからである。上記の如く
構成されたX線露光用マスクを、特願昭56−
54429号に示されるような、Heチヤンバを有する
X線露光装置のマスクチヤツクに装着する場合、
以下の如く、スループツトの向上が計れる。すな
わち、上記X線露光用マスクをマスクチヤツクか
ら交換するときににマスクチヤツク付近及び、マ
スクの枠2,3内に入る空気のHeへの置換時間
を極めて短くすることが出来、マスク交換時間が
短縮される。以上の第1図の構造により、マスク
メンブレン上への異物付着は防ぐことが出来る。
又、薄膜は、X線による劣化、異物付着、機械的
ダメージで交換することになるがこの場合は、カ
バー9を外し(第2図に示す止めネジ14によ
る)ネジ8により金属枠5を支持枠3からはが
す。ネジ8の頭には、真空グリース15が塗つて
あり、異物発生、Heもれを防ぐようにしてある。
その後、クリーンな雰囲気の中で新しい金属枠
5、薄膜6のセツトを支持枠3に組立てれば良
い。 第2図は、本発明による一実施例(第1図)の
平面図である。He注入穴7、ドレイン穴11は
3つずつあるが、これはHe交換が出来るのであ
れば、いくつでも良い。カバー9はHe注入穴7、
はがしネジ8共通で、止めネジ143ケにより金
属枠5に止めているが、要は、He注入穴7から
のHe流出を防げばカバー9、止め方は何でも良
い。又ドレイン11は支持枠3にでなく、金属枠
5に設けても良い。又、薄膜6は第3図に示すよ
うに支持枠3に直接付けても良い。なお、第3図
に示すように一体的に構成されたX線露光用マス
クは、マスクチヤツク24に交換可能に吸着して
装着される。 以下第3図により薄膜の条件を説明する。薄膜
6上の異物20はX線源21の大きさdと、薄膜
6ウエハ22間のギヤツプGによつて生ずる半影
ボケBによりウエハ22上には、ボケて結像す
る。すなわち、 B=d/lXG (1) 半影ボケBが異物20のウエハ22に結像しない
最大値となるが、結像せずとも異物20下にある
回路パターンのコントラスト低下を生ずるので、
異物20の許容値Rを仮に以下の如く決める。 R=B/2 (2) (1),(2)式にて条件を与えれば、薄膜6の位置が
決まる。今、下記の条件とする。 X線源の径 d=1mm X線源21と薄膜6間 l=200mn 異物20の許容大きさ R=5μm 式(2)より半影ボケB=10μm、式(1)より薄膜6
とウエハ22間距離Gは2mm。以上よりGは2mm
以上あれば良いことがわかる。通常マスク厚さは
2〜5mmであるので、マスクの上部に薄膜6を配
すれば良いことになる。次に薄膜6の物理的性質
について説明する。薄膜6は、第1にX線26を
透過しなければならない。具体的には90%程度以
上の透過率が必要である。次に、アライメント検
出可能でなければならず、図3の如き対物レンズ
23あるいはそれに類する光27を用いる検出で
は、検出光を透過する必要(95%位以上)があ
る。又、光学的に検出エリア内で均一である必要
がある。又強度的(耐久力)には、マスクメンブ
レン1よりは強い必要がある。弱ければ、マスク
の寿命が薄膜で決まつてしまう。又、密閉空間1
3にHeが注入されたX線露光用マスクは、特開
昭57−169242号公報(特願昭56−54429号)の方
式のX線露光装置であれば、マスクチヤツク24
に吸着して装着した状態では薄膜6上方もHe雰
囲気25である。又、同発明においては、メンブ
レン1とウエハ22間は大気雰囲気26である。
Heは、薄膜6、メンブレン1を若干は透過する
ので、密閉空間13をHe雰囲気に保つには、薄
膜6のHe透過量を、メンブレン1のそれより少
なくするか、図3の如く注入孔28とドレイン2
9によりHeを若干ずつ空間13内に注入する方
法がある。ドレイン29はHe注入孔28が十分
大きいか又は複数あつて、自然に換気できれば不
要である。以上の性質を満たす薄膜6の材料とし
ては、ニトロセルローズ(2μm)、塩化ビニリデ
ン(1〜2μm)、PIQ(1μm)等の有機膜が考えら
れる。勿論条件さえ満たせば、無機膜でも、有
機・無機合成膜でも良い。 第4図は、密閉空間13内をHe雰囲気に保つ
たまま、マスクを保管するケース30である。
He注入穴31からのHe注入もしくはHe雰囲気
内でマスク32をセツトしてフタ33をすること
により、第3図で説明した薄膜6あるいはメンブ
レン1からのHeもれによる密閉空間13のHe分
圧低下を防ぐ。このため、一度、セツトすると完
全密閉する必要がある。 第5図にて、別の実施例を説明する。密閉空間
13は、温度変動ΔT℃により容積が変化ΔVす
る。密閉空間13の容積をV,使用温度をT℃と
すると、 ΔV=ΔT/273+T×V (3) 密閉空間13を今直径D、高さhとすると、 V=(D/2)2π×h (4) T=24℃,D=40mm,h=5mm,ΔT=±0.5℃
とすると、(4)式よりV=6283mm3,(3)式より、ΔV
=±10mm3となる。今メンブレン1と薄膜6の剛
性比をBとすると、容積変化量ΔVによるそれぞ
れの膜の上下量は、高さhの変化量Δhを剛性比
Bで分けた量で近似できる。 Δh=h×ΔT/273+T (5) (5)式により、Δh=±8.4μmとなる。メンブレン
の上下量を±0.4μmに押さえようとすれば、剛性
比B=8.4/0.4=21となる。実際には、ΔTを±0.2℃ までは押さえられるので、剛性比Bは上記計算に
より8.4となり、十分実現可能である。別法とし
て図5に示す如く、径aの圧力調整穴40を設
け、圧力調整穴40の中に調整膜41を設けれ
ば、調整膜41を設ければ、調整膜41の上下量
±Cで密閉空間13の温度変動ΔTによる容積変
化ΔVを吸収することが考えられる。調整穴40
がN個あるとする。上下量Cは
[Industrial Field of Application] The present invention is an X-ray exposure mask that is detachably (replaceably) attached to a mask chuck, and a substrate to be exposed is exposed to foreign matter while preventing foreign matter from adhering to the membrane. An object of the present invention is to provide an X-ray exposure apparatus and a method thereof that prevent such problems. [Prior Art] An X-ray exposure mask used in a conventional X-ray exposure apparatus is made by covering a frame material with an X-ray mask supporting lower layer (hereinafter referred to as a membrane) as described in Japanese Patent Publication No. 53-24785. , forming a pattern on the membrane. [Problems to be Solved by the Invention] The above-mentioned conventional technology does not take into account the adhesion of foreign matter to the membrane of the X-ray exposure mask or the mask pattern, resulting in a decrease in yield during exposure (particularly in steppers, the yield is close to zero). ) and that the mask deteriorates due to cleaning with foreign substances. In order to solve the problems of the prior art described above, an object of the present invention is to provide an X-ray mask that is detachably attached to a mask chuck provided at the X-ray emission end of an atmosphere chamber filled with an X-ray transparent gas that does not attenuate X-rays. It is possible to prevent foreign matter from adhering to the membrane of a radiation exposure mask and to prevent the foreign matter from being transferred to the substrate to be exposed, thereby improving the yield in X-ray exposure, as well as preventing the attenuation of X-rays. resolution and high speed
An object of the present invention is to provide an X-ray exposure apparatus and a method thereof, which can realize radiation exposure and further increase the service life (life) of the X-ray exposure mask by reducing the number of times the X-ray exposure mask is washed. . [Means for Solving the Problems] In order to achieve the above object, the present invention provides an X-ray source, allows X-rays from the X-ray source to enter through a transmission window, and generates X-rays that do not attenuate the X-rays. An atmosphere chamber filled with a permeable gas is provided, a mask chuck is provided at the X-ray emission end of the atmosphere chamber, and a support frame is provided on the side of the mask chuck opposite to the substrate to be exposed around the membrane on which the circuit pattern is formed. A thin film that transmits X-rays is provided at a desired distance from the membrane on the side of the mask chuck opposite to the substrate to be exposed to prevent foreign matter from entering the space between the thin film and the membrane. An X-ray exposure mask, which is sealed from the outside air and further filled with an X-ray transparent gas that does not attenuate X-rays in the space, is attached to the mask chuck, and the
X-rays from a radiation source are incident on the atmospheric chamber through the transmission window, and the X-rays irradiated through the atmospheric chamber are transmitted through a thin film of an X-ray exposure mask attached to the mask chuck to prevent the presence of foreign matter and the X-rays. A circuit pattern formed on the membrane by irradiating the membrane through a space filled with an X-ray transparent gas that does not attenuate the radiation is placed opposite to the circuit pattern of the X-ray exposure mask with a minute gap formed therein. This is an X-ray exposure apparatus characterized in that it is configured to perform exposure transfer onto a substrate. Further, the present invention is characterized in that, in the X-ray exposure apparatus, the X-ray exposure mask is configured to be attached to the mask chuck in a state in which the X-ray transparent gas is enclosed. Further, the present invention is characterized in that the X-ray exposure mask in the X-ray exposure apparatus is configured by attaching the frame on which the thin film is stretched by adhering to the support frame. Further, the present invention supports the surface of the membrane on the side of the mask chuck opposite to the substrate to be exposed around the membrane on which the circuit pattern is formed by a support frame, and the membrane is spaced a desired distance from the side of the mask chuck opposite to the substrate to be exposed. A thin film that transmits X-rays is provided, the space between the thin film and the membrane is sealed from the outside air to prevent foreign matter from entering, and the space is further filled with an X-ray-transparent gas that does not attenuate X-rays. Prepare the configured X-ray exposure mask, and place the prepared X-ray exposure mask with a transmission window on the incident side.
It is attached to a mask chuck provided at the X-ray output end of an atmosphere chamber filled with an X-ray transparent gas that does not attenuate the radiation, and X-rays from the X-ray source are incident on the atmosphere chamber through the transmission window and the atmosphere is X-rays irradiated through the chamber are irradiated onto the membrane through a thin film of an X-ray exposure mask attached to the mask chuck and through a space filled with an X-ray transparent gas that is free of foreign matter and does not attenuate the X-rays. This is an X-ray exposure method characterized in that the circuit pattern formed in the X-ray exposure mask is exposed and transferred onto a substrate to be exposed which is placed opposite to the circuit pattern of the X-ray exposure mask by forming a minute gap therebetween. Further, the present invention is characterized in that, in the X-ray exposure method, the X-ray exposure mask is attached to the mask chuck in a state in which the X-ray transparent gas is enclosed. [Function] With the above configuration, the X-ray exposure mask attached to the mask chuck provided at the X-ray output end of the atmosphere chamber filled with an X-ray transparent gas that does not attenuate X-rays can be attached to a membrane formed with a circuit pattern. A thin film that transmits X-rays is provided at a desired distance from the membrane on the side of the mask chuck opposite to the substrate to be exposed, with the surface of the mask chuck opposite to the substrate to be exposed around the membrane being supported by a support frame. The space between the thin film and the membrane is sealed from the outside air to prevent foreign matter from entering, and the space is further sealed with X.
Since the structure is filled with an X-ray transparent gas such as He that does not attenuate the rays, it prevents foreign matter from adhering to the membrane and allows it to adhere only to the thin film. By preventing the above-mentioned foreign matter from being exposed and transferred onto the substrate to be exposed, it is possible to improve the yield in X-ray exposure, and to prevent the attenuation of X-rays, realizing high-resolution and high-speed X-ray exposure. The service life of X-ray exposure masks can be extended by reducing the number of times they are washed.
It is possible to increase the amount of [Example] Hereinafter, an example of the present invention will be described with reference to FIG. In an X-ray exposure mask, a Si frame 2 with a mask membrane 1 stretched thereon, a support frame 3 made of Virex bonded to the Si frame 2, a metal frame 5 bonded to the support frame 3 with double-sided tape 4, and a metal frame 5 bonded to the metal frame 5. The basic structure is the thin film 6. Further, the metal frame 5 has a hole 7 for injecting He, a screw 8 for peeling off the metal frame, and a cover 9 for these. Further, a filter 10 is provided in the He injection hole 7. Also, drain hole 11 of He
is provided on the support frame 3, and is covered with a lid 12. The method and operation of assembling the X-ray exposure mask having the above structure will be explained below. in clean air,
A metal frame 5 covered with a thin film 6 is adhered to a virex frame 3 of an X-ray exposure mask with double-sided tape 4. At this time, the cover 9 and the lid 12 are removed. Prepare separately
He injection device (can be easily designed by the engineer concerned).
Not shown. ), He gas is gradually injected from the He injection hole 7 so as not to damage the membrane 1 and the thin film 6. At this time, the filter 10 prevents foreign matter from entering. The mixture ratio of the drained He and air is monitored, and when a sufficient He atmosphere (approximately 99% or more) is formed in the closed space 13, the cover 9 and lid 12 are closed. the assembly work itself
If it is performed in He gas, He injection work and injection-related structures are not required. It is desirable to handle the mask assembled as described above with the thin film 6 facing upward. This is because the foreign matter 20 usually adheres from above, and natural adhesion from below is extremely rare. An X-ray exposure mask constructed as described above was manufactured in a patent application filed in 1983.
When attached to the mask chuck of an X-ray exposure device having a He chamber, as shown in No. 54429,
The throughput can be improved as follows. That is, when exchanging the X-ray exposure mask from the mask chuck, the time for replacing the air near the mask chuck and in the frames 2 and 3 of the mask with He can be extremely shortened, and the time for exchanging the mask is shortened. Ru. The above structure shown in FIG. 1 can prevent foreign matter from adhering to the mask membrane.
Also, the thin film will need to be replaced due to deterioration due to X-rays, adhesion of foreign substances, or mechanical damage. In this case, remove the cover 9 (using the set screw 14 shown in FIG. Peel it off from frame 3. Vacuum grease 15 is applied to the head of the screw 8 to prevent foreign matter generation and He leakage.
Thereafter, a new set of metal frame 5 and thin film 6 may be assembled to the support frame 3 in a clean atmosphere. FIG. 2 is a plan view of one embodiment (FIG. 1) according to the present invention. There are three He injection holes 7 and three drain holes 11, but any number may be used as long as He exchange is possible. Cover 9 has He injection hole 7,
The peeling screws 8 are common and are fixed to the metal frame 5 by 143 setscrews, but the bottom line is that the cover 9 can be fixed in any way as long as it prevents He from flowing out from the He injection hole 7. Further, the drain 11 may be provided not on the support frame 3 but on the metal frame 5. Alternatively, the thin film 6 may be attached directly to the support frame 3 as shown in FIG. The X-ray exposure mask integrally constructed as shown in FIG. 3 is attached to the mask chuck 24 so as to be replaceable. The conditions of the thin film will be explained below with reference to FIG. The foreign object 20 on the thin film 6 forms a blurred image on the wafer 22 due to the size d of the X-ray source 21 and the penumbra blur B caused by the gap G between the thin film 6 and the wafer 22. That is, B=d/lXG (1) The penumbra blur B becomes the maximum value at which the foreign object 20 is not imaged on the wafer 22, but even if no image is formed, the contrast of the circuit pattern under the foreign object 20 is reduced, so
The allowable value R of the foreign matter 20 is tentatively determined as follows. R=B/2 (2) If conditions are given using equations (1) and (2), the position of the thin film 6 is determined. Now, assume the following conditions. Diameter of X-ray source d = 1 mm Between X-ray source 21 and thin film 6 L = 200 mn Allowable size of foreign object 20 R = 5 μm Penumbra blur B = 10 μm from formula (2), thin film 6 from formula (1)
The distance G between the wafer 22 and the wafer 22 is 2 mm. From the above, G is 2mm
It turns out that more is better. Since the thickness of the mask is usually 2 to 5 mm, it is sufficient to place the thin film 6 on the top of the mask. Next, the physical properties of the thin film 6 will be explained. The membrane 6 must firstly be transparent to the X-rays 26. Specifically, a transmittance of about 90% or more is required. Next, alignment detection must be possible, and in detection using the objective lens 23 as shown in FIG. 3 or similar light 27, it is necessary to transmit the detection light (approximately 95% or more). Further, it is necessary to be optically uniform within the detection area. Also, in terms of strength (durability), it needs to be stronger than the mask membrane 1. If it is weak, the life of the mask will be determined by the thin film. Also, closed space 1
If the X-ray exposure mask injected with He in No. 3 is an
In the state where the thin film 6 is attached by adsorption, the He atmosphere 25 is also present above the thin film 6. Further, in the same invention, an atmospheric atmosphere 26 exists between the membrane 1 and the wafer 22.
Since He permeates through the thin film 6 and membrane 1 to some extent, in order to maintain the sealed space 13 in a He atmosphere, the amount of He permeated through the thin film 6 must be made smaller than that through the membrane 1, or the injection hole 28 as shown in FIG. and drain 2
There is a method in which He is injected into the space 13 little by little using 9. The drain 29 is not necessary if the He injection hole 28 is sufficiently large or has a plurality of holes to allow natural ventilation. Possible materials for the thin film 6 that satisfy the above properties include organic films such as nitrocellulose (2 μm), vinylidene chloride (1 to 2 μm), and PIQ (1 μm). Of course, as long as the conditions are met, an inorganic film or an organic/inorganic synthetic film may be used. FIG. 4 shows a case 30 in which masks are stored while maintaining a He atmosphere inside the closed space 13.
By injecting He through the He injection hole 31 or by setting the mask 32 in a He atmosphere and closing the lid 33, the partial pressure of He in the sealed space 13 due to He leaking from the thin film 6 or membrane 1 explained in FIG. Prevent decline. Therefore, once set, it must be completely sealed. Another embodiment will be explained with reference to FIG. The volume of the closed space 13 changes by ΔV due to temperature fluctuation ΔT°C. If the volume of the sealed space 13 is V and the operating temperature is T°C, then ΔV=ΔT/273+T×V (3) If the sealed space 13 is now diameter D and height h, then V=(D/2) 2 π× h (4) T=24℃, D=40mm, h=5mm, ΔT=±0.5℃
Then, from equation (4), V=6283mm 3 , and from equation (3), ΔV
= ± 10mm3 . Now, assuming that the stiffness ratio of the membrane 1 and the thin film 6 is B, the amount of vertical movement of each membrane due to the volume change ΔV can be approximated by dividing the change Δh in height h by the stiffness ratio B. Δh=h×ΔT/273+T (5) From equation (5), Δh=±8.4 μm. If we try to keep the vertical amount of the membrane within ±0.4 μm, the stiffness ratio B=8.4/0.4=21. In reality, ΔT can be suppressed to ±0.2°C, so the stiffness ratio B is 8.4 according to the above calculation, which is fully achievable. As an alternative method, as shown in FIG. 5, if a pressure adjustment hole 40 with a diameter of a is provided and an adjustment membrane 41 is provided in the pressure adjustment hole 40, if the adjustment membrane 41 is provided, the vertical amount of the adjustment membrane 41 ±C It is conceivable that the volume change ΔV due to the temperature fluctuation ΔT of the closed space 13 can be absorbed by. Adjustment hole 40
Suppose there are N pieces. The vertical amount C is

〔発明の効果〕〔Effect of the invention〕

本発明によれば、X線を減衰させないX線透過
気体が満たされた雰囲気チヤンバのX線の出射端
に設けられたマスクチヤツクに装着されたX線露
光用マスクを、回路パターンを形成したメンブレ
ンの周囲の被露光基板と反対のマスクチヤツク側
の面を支持枠で支持して、前記メンブレンに対し
て被露光基板と反対のマスクチヤツク側に所望の
距離離してX線を透過する薄膜を設けて該薄膜と
メンブレンとの間の空間内に異物が入り込まない
ように外気に対し密閉させ、更に前記空間内にX
線を減衰させないHe等のX線透過期待を満たし
て構成したので、メンブレン上への異物の付着を
防止して薄膜上にのみ付着させるようにして薄膜
上の異物を半影ボケあるいは回折効果によりの被
露光基板上に上記異物が露光転写されるのを防止
して、薄膜上の異物を数μmのゴミまで許容でき
るようにし、またX線が透過する異物においてX
線コントラスト低下による線幅不良もなくし、特
にステツプ&リピート方式のX線露光において歩
留まり向上をはかると共にX線の減衰を防止して
高解像度で高速度でX線露光を実現でき、更にX
線露光用マスクの洗浄回数を低減してX線露光用
マスクの耐用期間(寿命)の増大をはかることが
でき、高価なX線マスクのコストを1/10以下にす
ることができる効果を奏する。
According to the present invention, an X-ray exposure mask attached to a mask chuck provided at the X-ray output end of an atmosphere chamber filled with an X-ray transparent gas that does not attenuate X-rays is connected to a membrane formed with a circuit pattern. The surface on the side of the mask chuck opposite to the surrounding substrate to be exposed is supported by a support frame, and a thin film that transmits X-rays is provided at a desired distance from the membrane on the side of the mask chuck opposite to the substrate to be exposed. The space between the
Since the structure satisfies the expectation of X-ray transmission such as He that does not attenuate rays, it prevents foreign matter from adhering to the membrane and allows it to adhere only to the thin film, thereby eliminating foreign matter on the thin film through penumbra blur or diffraction effects. It prevents the foreign matter from being transferred onto the substrate to be exposed by exposure, allowing foreign matter on the thin film to be tolerated up to a few micrometers, and also makes it possible to prevent foreign matter through which X-rays can pass through.
It eliminates defective line widths due to line contrast deterioration, improves yield especially in step-and-repeat X-ray exposure, prevents X-ray attenuation, and realizes high-resolution and high-speed X-ray exposure.
It is possible to increase the service life (lifetime) of the X-ray exposure mask by reducing the number of times the X-ray exposure mask is washed, and it has the effect of reducing the cost of expensive X-ray masks to less than 1/10. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す断面図、第2
図は本発明の一実施例を示す平面図、第3図は本
発明の原理及び、詳細を説明する図、第4図は本
発明の別の実施例を示す断面図、第5図は本発明
の更に別の実施例を示す断面図、第6図は本発明
の更に別の実施例を示す断面図、第7図は本発明
の更に別の実施例を示す断面図である。 1……メンブレン、3……支持枠、5……金属
枠、6……薄膜、20……異物、21……X線
源、22……ウエハ、26……X線。
FIG. 1 is a sectional view showing one embodiment of the present invention, and FIG.
The figure is a plan view showing one embodiment of the present invention, FIG. 3 is a diagram explaining the principle and details of the present invention, FIG. 4 is a sectional view showing another embodiment of the present invention, and FIG. FIG. 6 is a sectional view showing still another embodiment of the invention, FIG. 7 is a sectional view showing still another embodiment of the invention. DESCRIPTION OF SYMBOLS 1... Membrane, 3... Support frame, 5... Metal frame, 6... Thin film, 20... Foreign matter, 21... X-ray source, 22... Wafer, 26... X-ray.

Claims (1)

【特許請求の範囲】 1 X線源を設け、該X線源からのX線を透過窓
を通して入射され、X線を減衰させないX線透過
気体が満たされた雰囲気チヤンバを設け、該雰囲
気チヤンバのX線の出射端に設けられたマスクチ
ヤツクを設け、回路パターンを形成したメンブレ
ンの周囲の被露光基板と反対のマスクチヤツク側
の面を支持枠で支持して、前記メンブレンに対し
て被露光基板と反対のマスクチヤツク側に所望の
距離離してX線を透過する薄膜を設けて該薄膜と
メンブレンとの間の空間内に異物が入り込まない
ように外気に対し密閉させ、更に前記空間内にX
線を減衰させないX線透過気体を満たして構成し
たX線露光用マスクを前記マスクチヤツクに装着
し、前記X線源からのX線を前記透過窓を通して
前記雰囲気チヤンバに入射されて前記雰囲気チヤ
ンバを通して照射されたX線を前記マスクチヤツ
クに装着されたX線露光用マスクの薄膜を通して
異物が存在しないで且つX線を減衰させないX線
透過気体を満たした空間を通してメンブレンに照
射して該メンブレン上に形成された回路パターン
を該X線露光用マスクの回路パターンに対して微
小間隙形成して対向配置された被露光基板上に露
光転写するように構成したことを特徴とするX線
露光装置。 2 前記X線露光用マスクを、前記X線透過気体
を封入した状態で前記マスクチヤツクに装着する
ように構成したことを特徴とする特許請求の範囲
第1項記載のX線露光装置。 3 前記X線露光用マスクにおいて、前記薄膜を
張設した枠を前記支持枠に接着して取付けて構成
したことを特徴とする特許請求の範囲第1項記載
のX線露光装置。 4 回路パターンを形成したメンブレンの周囲の
被露光基板と反対のマスクチヤツク側の面を支持
枠で支持して、前記メンブレンに対して被露光基
板と反対のマスクチヤツク側に所望の距離離して
X線を透過する薄膜を設けて該薄膜とメンブレン
との間の空間内に異物が入り込まないように外気
に対し密閉させ、更に前記空間内にX線を減衰さ
せないX線透過気体を満たして構成したX線露光
用マスクを準備し、該準備されたX線露光用マス
クを、入射側に透過窓を有してX線を減衰させな
いX線透過気体が満たされた雰囲気チヤンバのX
線の出射端に設けられたマスクチヤツクに装着
し、X線源からのX線を前記透過窓を通して前記
雰囲気チヤンバに入射されて前記雰囲気チヤンバ
を通して照射されたX線を前記マスクチヤツクに
装着されたX線露光用マスクの薄膜を通して異物
が存在しないで且つX線を減衰させないX線透過
気体を満たした空間を通してメンブレンに照射し
て該メンブレン上に形成された回路パターンを該
X線露光用マスクの回路パターンに対して微小間
隙形成して対向配置された被露光基板上に露光転
写することを特徴とするX線露光方法。 5 前記X線露光用マスクを、前記X線透過気体
を封入した状態で前記マスクチヤツクに装着する
ことを特徴とする特許請求の範囲第4項記載のX
線露光方法。
[Claims] 1. An X-ray source is provided, an atmospheric chamber is provided in which X-rays from the X-ray source are incident through a transmission window, and an X-ray transparent gas that does not attenuate the X-rays is filled; A mask chuck is provided at the X-ray emission end, and the side of the mask chuck opposite to the exposed substrate surrounding the membrane on which the circuit pattern is formed is supported by a support frame, and the membrane is placed opposite to the exposed substrate. A thin film that transmits X-rays is provided at a desired distance on the mask chuck side of the mask, and the space between the thin film and the membrane is sealed from the outside air to prevent foreign matter from entering.
An X-ray exposure mask filled with an X-ray transparent gas that does not attenuate radiation is attached to the mask chuck, and X-rays from the X-ray source are incident on the atmosphere chamber through the transmission window and irradiated through the atmosphere chamber. X-rays formed on the membrane are irradiated with the X-rays through the thin film of the X-ray exposure mask attached to the mask chuck and through a space filled with an X-ray transparent gas that is free of foreign matter and does not attenuate the X-rays. 1. An X-ray exposure apparatus characterized in that the X-ray exposure apparatus is configured to expose and transfer a circuit pattern formed on the X-ray exposure mask onto a substrate to be exposed, which is placed opposite to the circuit pattern of the X-ray exposure mask with a minute gap formed therebetween. 2. The X-ray exposure apparatus according to claim 1, wherein the X-ray exposure mask is configured to be attached to the mask chuck in a state in which the X-ray transparent gas is enclosed. 3. The X-ray exposure apparatus according to claim 1, wherein the X-ray exposure mask is constructed by attaching a frame on which the thin film is stretched by adhering it to the support frame. 4. Support the surface of the membrane on which the circuit pattern is formed on the side of the mask chuck opposite to the substrate to be exposed with a support frame, and apply X-rays at a desired distance from the membrane to the side of the mask chuck opposite to the substrate to be exposed. A thin film that transmits X-rays is provided, the space between the thin film and the membrane is sealed from the outside air to prevent foreign matter from entering, and the space is further filled with an X-ray-transparent gas that does not attenuate the X-rays. An exposure mask is prepared, and the prepared X-ray exposure mask is placed in an atmosphere chamber filled with an X-ray transparent gas that has a transmission window on the incident side and does not attenuate X-rays.
The X-rays from the X-ray source are incident on the atmosphere chamber through the transmission window, and the X-rays irradiated through the atmosphere chamber are transmitted to the X-rays attached to the mask chuck. The circuit pattern formed on the membrane by irradiating the membrane through the thin film of the exposure mask through a space filled with an X-ray transparent gas that is free of foreign matter and does not attenuate the X-rays is the circuit pattern of the X-ray exposure mask. An X-ray exposure method characterized by exposing and transferring onto a substrate to be exposed facing each other with a minute gap formed therebetween. 5. The X-ray exposure mask according to claim 4, wherein the X-ray exposure mask is attached to the mask chuck in a state in which the X-ray transparent gas is enclosed.
Line exposure method.
JP61079914A 1986-04-09 1986-04-09 Mask for x-ray exposure Granted JPS62237727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61079914A JPS62237727A (en) 1986-04-09 1986-04-09 Mask for x-ray exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61079914A JPS62237727A (en) 1986-04-09 1986-04-09 Mask for x-ray exposure

Publications (2)

Publication Number Publication Date
JPS62237727A JPS62237727A (en) 1987-10-17
JPH0588534B2 true JPH0588534B2 (en) 1993-12-22

Family

ID=13703557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61079914A Granted JPS62237727A (en) 1986-04-09 1986-04-09 Mask for x-ray exposure

Country Status (1)

Country Link
JP (1) JPS62237727A (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583232A (en) * 1978-12-20 1980-06-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for x ray exposure
JPS57169242A (en) * 1981-04-13 1982-10-18 Hitachi Ltd X-ray transferring device
JPS5873116A (en) * 1981-10-28 1983-05-02 Hitachi Ltd X-ray exposure device
JPS58191433A (en) * 1982-05-04 1983-11-08 Fujitsu Ltd Method and device for roentgen-ray transfer
JPS6065531A (en) * 1983-09-21 1985-04-15 Hitachi Ltd Method for fixing substrate in thin-leaf form
JPS6074527A (en) * 1983-09-30 1985-04-26 Hitachi Ltd Mask fixing process and device therefor
JPS6132521A (en) * 1984-07-25 1986-02-15 Nec Corp Method for x-ray exposure and device thereof
JPS6167917A (en) * 1984-09-11 1986-04-08 Nippon Telegr & Teleph Corp <Ntt> X-ray lead-out cylinder

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5583232A (en) * 1978-12-20 1980-06-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for x ray exposure
JPS57169242A (en) * 1981-04-13 1982-10-18 Hitachi Ltd X-ray transferring device
JPS5873116A (en) * 1981-10-28 1983-05-02 Hitachi Ltd X-ray exposure device
JPS58191433A (en) * 1982-05-04 1983-11-08 Fujitsu Ltd Method and device for roentgen-ray transfer
JPS6065531A (en) * 1983-09-21 1985-04-15 Hitachi Ltd Method for fixing substrate in thin-leaf form
JPS6074527A (en) * 1983-09-30 1985-04-26 Hitachi Ltd Mask fixing process and device therefor
JPS6132521A (en) * 1984-07-25 1986-02-15 Nec Corp Method for x-ray exposure and device thereof
JPS6167917A (en) * 1984-09-11 1986-04-08 Nippon Telegr & Teleph Corp <Ntt> X-ray lead-out cylinder

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JPS62237727A (en) 1987-10-17

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