JPS5872151A - Production for photoreceptor - Google Patents

Abstract

PURPOSE:To eliminate the variance of sensitivity and the optical fatigue and improve the charging capacity and etc., by forming an SeTe alloy layer with a prescribed thickness after forming a ground Se layer on a conductive substrate and vapor-depositing Se and an SeTe alloy simultaneously onto this alloy layer to make the distribution of Te uniform. CONSTITUTION:A bell jar 1 is evacuated, and Se is vapor-deposited from a boat 7a to a substrate (such as an Al plate), which is heated at 60 deg.C by a heater 6, to form a ground layer with 50mu thickness. Next, 25wt% SeTe alloy is vaporized from a boat 7b at a vaporization source temperature of 350 deg.C to vapor-deposit an SeTe layer onto the ground layer with 1mu thickness. Se is vapor-deposited from the boat 7a while vapor-depositing SeTe to provide a layer where concentration of Te is reduced to 10wt% and the thickness is about 1. An obtained photoreceptor is subjected to the heat treatment in a thermostat at 70 deg.C for about 30min. Thus, the photoreceptor which has high sensitivity to the beam of 780nm wavelength of a semiconductor laser and is superior in charging capacity, wear resistance, etc. is obtained.

Description

[Detailed description of the invention] The present invention applies to long wavelength light such as semiconductor lasers.

S with high sensitivity and stable repetitive operation without optical fatigue
The present invention relates to a method of forming an e/5eTe laminated photoreceptor.

Conventionally, a highly doped S e Te / S e laminated photoreceptor has been proposed as an electrophotographic photoreceptor for long wavelengths.
There is a method in which an e-alloy is used as an evaporation source, and a method in which Se and Te are evaporated using separate evaporation sources. first.

In the method using a 5eTe alloy, the closer to the 99 surface, where the vapor pressures of Se and Te are significantly different, the more Te becomes excessive. This results in uneven sensitivity and
This can easily cause deterioration of charging performance. Furthermore, the method of depositing Se and Te using separate evaporation sources is particularly useful when forming a highly doped layer.

In order to achieve alloying, other manufacturing conditions such as substrate heating must be controlled very strictly, and even a slight change in conditions tends to greatly destabilize the photoreceptor characteristics.

The object of the present invention is to have high sensitivity to long wavelength light, and to prevent charging and
For repeated electrophotographic process of dew point.

5e to eliminate sensitivity unevenness and stabilize charging characteristics
The present invention relates to a method of manufacturing a photoreceptor including a Te layer.

Preferred embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 1 is a diagram for explaining one embodiment of the present invention, in which reference numeral 1 denotes a Pel jar, 2 a base, and a three-piece exhaust conduit connected to an exhaust motor (not shown). 4 is a holder, 5 is an aluminum (A/) substrate, 6 is a heater for heating the curtain plate, and 7a and 7b are boards made of selenium (Se) and selenite (Se), respectively.
Te) When the alloy is placed on the Pel jar and the exhaust motor is required to discharge 1 yen of air from the exhaust conduit 3, and the inside of the Pel jar is in a vacuum state, the substrate is heated to 60°C by the heater 6f. In step 5, 7 sK of Se was heated in a boat and evaporated to a thickness of 50 μm, and 25 W of Se was deposited on top of the Se layer.
A 5eTe alloy with a Te concentration of t%Te is deposited to a thickness of 1 μm at a boat 7, that is, an evaporation source temperature of 350°C, and 5eTe is deposited while simultaneously heating Se at the port to deposit Se, and the Te concentration is reduced to 10wt%. A layer with a thickness of about 1 μm was provided.

The thus obtained 5eTe/Se&layer body was heated to 70°C in a constant temperature bath.
A photoreceptor was prepared by heat-treating at ℃ for 30 minutes. .

The thus obtained photoreceptor was shaped into a drum as shown in FIG. 2, and the photoreceptor drum was used to examine changes in its photosensitive characteristics through a normal electrophotographic process.

In FIG. 2, the T1ti charger L is an exposure section and has a semiconductor laser light source or a light source of visible light for copying light. K is an electrometer for measuring the surface potential of the photosensitive drum, G is a developing device wT2 is a transfer corotron, PFi, recording paper 9M is a static elimination lamp + Ts is an AC corona charger for static elimination, and C is a cleaner.

Measure the potentials of the exposed and non-exposed areas of the photosensitive drum surface.

Thereafter, development is performed by a developing device G, and the toner image is transferred onto recording paper. In order to remove the toner charge remaining on the surface of the photoreceptor drum and the surface charge of the photoreceptor drum, the residual charge is neutralized by the static elimination lamp M and the AC corona charger Ts, and the residual toner is removed by the cleaner C. Then, the uniform charging process described above is started again. When a laser beam with a wavelength of about 780 is used as a semiconductor laser, the distribution energy is 2 μm/d! I then performed M recording on 100,000 sheets of recording paper, but as shown in the real axis in Figure 3, there was no change in photosensitivity. (This is the photosensitivity characteristic when the photoreceptor drum was used.) Furthermore, there was no change in the potential on the surface of the photoreceptor drum.

What is the reason for this improvement in the characteristics of the photoreceptor?

First, only a 5eTe layer is formed on the underlying Se layer, and then a 5eTe layer doped with tellurium (Te) at a high concentration is formed to obtain a photosensitive layer having high sensitivity to light at wavelengths e.g. from a semiconductor laser. By simultaneously depositing 5eTe alloy and Se on this photosensitive layer.

This is because the Te concentration is reduced to suppress the above-mentioned optical fatigue and to prevent a decrease in charge retention ability due to excessive Te.

Note that by forming a Se layer on this 5eTe (5eTe) layer, the wear resistance of the photoreceptor surface can be improved.

According to the present invention, the distribution of eTe is uniform and the concentration is low in the surface layer of the photoreceptor, so that 1) sensitivity unevenness is eliminated; 2) Charging performance is improved.

3) Eliminates light fatigue. 4) Improved wear resistance.

There are effects such as

[Brief explanation of drawings]

FIG. 1 is a block diagram of an embodiment of the present invention, FIG. 2 is a diagram explaining an electrophotographic process, and FIG. 3 is a diagram showing the photosensitivity characteristics of a photoreceptor. 1: bell jar, 4: holder, 5: board. 6: Heater + 7a, 7b: Boat.

Claims (2)

[Claims] (1) In a method for manufacturing a photoconductor having a selenium (Se) base layer and a selenium tellurium (SeTe) alloy layer formed on the selenium layer, after the step of forming the base selenium layer,
A method for producing a photoreceptor, characterized in that a 5eTe alloy layer is formed to a predetermined thickness, and then selenium and a selenium tellurium alloy are simultaneously vapor-deposited on the 5eTe alloy layer. (2) A selenium vapor deposited layer is formed after the step of simultaneously vapor depositing selenium and selenium telluride alloy! A method for producing a photoreceptor according to item (1).