JPS58704Y2 - plating equipment - Google Patents

plating equipment

Info

Publication number
JPS58704Y2
JPS58704Y2 JP1978116997U JP11699778U JPS58704Y2 JP S58704 Y2 JPS58704 Y2 JP S58704Y2 JP 1978116997 U JP1978116997 U JP 1978116997U JP 11699778 U JP11699778 U JP 11699778U JP S58704 Y2 JPS58704 Y2 JP S58704Y2
Authority
JP
Japan
Prior art keywords
plated
cathode
shield plate
plating
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1978116997U
Other languages
Japanese (ja)
Other versions
JPS5533970U (en
Inventor
良雄 泰
俊夫 和田
Original Assignee
松下電器産業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 松下電器産業株式会社 filed Critical 松下電器産業株式会社
Priority to JP1978116997U priority Critical patent/JPS58704Y2/en
Publication of JPS5533970U publication Critical patent/JPS5533970U/ja
Application granted granted Critical
Publication of JPS58704Y2 publication Critical patent/JPS58704Y2/en
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は円盤体の表面に均一なメッキ層を形成するメッ
キ装置、特に補助陰極と同等の効果を有する陰極用シー
ルド板に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plating device for forming a uniform plating layer on the surface of a disc body, and particularly to a cathode shield plate having an effect equivalent to that of an auxiliary cathode.

最近、映像及び音声信号を同時に再生し得るレコード状
高密度記録担体、いわゆるビテ゛オディスク(以下、デ
ィスクと称する)の開発が急速に進められている。
Recently, development of so-called video discs (hereinafter referred to as discs), which are record-like high-density recording carriers that can simultaneously reproduce video and audio signals, has been rapidly progressing.

その中で情報信号を機械的な凹凸として記録されたディ
スクから機械的に信号を再生する方式がある。
Among these methods, there is a method of mechanically reproducing signals from a disk on which information signals are recorded as mechanical unevenness.

このような機械式ディスクの記録用原盤の製作手段とし
ての銅メツキ方法がある。
There is a copper plating method as a means of manufacturing a recording master for such a mechanical disk.

このようなビデオテ゛イスタ方式において、ディスクの
大きさが例えば300φmmの物である場合には、原盤
の大きさは少なくとも350φmm程度の原盤が必要で
あり、一方、記録用原盤とするには記録時の安定な切削
性と再生時の良好な信号対雑音比を保障するために銅メ
ッキ層は均質で一様なものであることが不可欠である。
In such a video player system, if the disc size is, for example, 300 φmm, the master disc size must be at least 350 φmm; on the other hand, in order to use it as a recording master disc, It is essential that the copper plating layer be homogeneous and uniform to ensure stable machinability and a good signal-to-noise ratio during playback.

即ち、円盤メッキ層の各部の厚さが平均しくいいかえる
と、各部の電流密度が平均していること。
In other words, if the thickness of each part of the disk plating layer is average, the current density of each part is average.

)、且つ金属組織的にみて一様で均質なものでなければ
ならない。
), and must be uniform and homogeneous in terms of metallographic structure.

一般に円盤に電解メッキをすると、第1図に示すように
円盤状被メッキ物1の外周部のメッキ層2が厚くなり、
厚みムラが生じる。
Generally, when a disk is electrolytically plated, the plating layer 2 on the outer periphery of the disk-shaped object 1 becomes thicker, as shown in FIG.
Uneven thickness occurs.

この厚みムラを少なくするために、補助陰極を設けるこ
とが考えられている。
In order to reduce this thickness unevenness, it has been considered to provide an auxiliary cathode.

すなわち、第2図に示すように被メッキ物1に近接して
金属製の補助陰極3を設けることによって、被メッキ物
1の周辺の電界を調節して、電流密度を平均化し、メッ
キ層の厚みムラを押えようとするものである。
That is, as shown in FIG. 2, by providing a metal auxiliary cathode 3 close to the object to be plated 1, the electric field around the object to be plated 1 is adjusted, the current density is averaged, and the plating layer is This is intended to suppress uneven thickness.

しかし、第2図のように、被メッキ物1を支持するアー
ム4より、支持アーム5を介してリング状の補助陰極3
を保持する構成は、補助陰極3と被メッキ物1との相対
的な位置関係を調整保持することが困難であった。
However, as shown in FIG. 2, the ring-shaped auxiliary cathode 3
In the configuration in which the auxiliary cathode 3 and the object to be plated 1 are held, it is difficult to adjust and maintain the relative positional relationship between the auxiliary cathode 3 and the object to be plated 1.

厚みムラを少なくするための他の方法として、第3図に
示すような補助陰極を設けることが考えられる。
Another method for reducing thickness unevenness is to provide an auxiliary cathode as shown in FIG.

第3図において、円盤状の被メッキ物1より予め定めら
れた長さだけ径が大きいプラスチック等の絶縁物で形成
されたリング状の補助陰極保持体6の外周部には補助陰
極となる金属テープ(例えばアルミニウム)等の薄膜導
電体7が付着されている。
In FIG. 3, a ring-shaped auxiliary cathode holder 6 made of an insulating material such as plastic and having a diameter larger than the disc-shaped object 1 by a predetermined length has a metal that will become an auxiliary cathode on the outer periphery. A thin film conductor 7, such as tape (eg aluminum), is attached.

補助陰極保持体6はプラスチックネジ8および金属ネジ
9,10により、被メッキ物1の外側部に離反可能に固
定される。
The auxiliary cathode holder 6 is removably fixed to the outer side of the object to be plated 1 by plastic screws 8 and metal screws 9 and 10.

この時、被メッキ物1と保持体6は同じ中心軸を有する
よう調整されている。
At this time, the object to be plated 1 and the holder 6 are adjusted to have the same central axis.

ここで金属ネジ9は被メッキ物1と補助電極7を同電位
にするためのものであり、盤属ネジ10は通電の働きを
するものである。
Here, the metal screw 9 is used to bring the object to be plated 1 and the auxiliary electrode 7 to the same potential, and the panel screw 10 is used to conduct electricity.

この方法によると、容易に被メッキ物1と補助電極7の
位置関係を保持でき、メッキ作業中における位置変動も
ない。
According to this method, the positional relationship between the object to be plated 1 and the auxiliary electrode 7 can be easily maintained, and the position does not change during the plating operation.

しかし、補助電極保持体にメッキされ補助電極の表面積
が累積メッキ時間に応じて増加する為電流密度が変化す
る。
However, since the surface area of the auxiliary electrode plated on the auxiliary electrode holder increases in accordance with the cumulative plating time, the current density changes.

このため、全体の何%が被メッキ物にメッキされるかい
ちいち計算してから総電流を決めなければならない。
For this reason, the total current must be determined after calculating what percentage of the total is to be plated on the object to be plated.

また、所定時間使用後は補助電極を交換しなければなら
ない等の問題点がある。
Further, there are other problems such as the need to replace the auxiliary electrode after use for a predetermined period of time.

以上のような問題点を解決するものとして第4図に示す
構成のものが考えられる。
A configuration shown in FIG. 4 can be considered as a solution to the above-mentioned problems.

これは、補助陰極と同等の効果を有する陰極用リング状
シールド板11を被メッキ物1の両側に位置させ、相対
的な位置関係をスペーサ12で保持する。
In this case, cathode ring-shaped shield plates 11 having the same effect as an auxiliary cathode are positioned on both sides of the object to be plated 1, and the relative positional relationship is maintained by spacers 12.

被メッキ物1とスペーサ12はプラスチックネジ等の絶
縁物で固定する。
The object to be plated 1 and the spacer 12 are fixed with an insulating material such as a plastic screw.

陰極用リング状シールド板11とスペーサ12は、図示
していないがプラスチックネジ等の絶縁物で1定する。
Although not shown, the cathode ring-shaped shield plate 11 and the spacer 12 are fixed with an insulator such as a plastic screw.

金属ネジ10は被メッキ物1を固定すると共に通電の働
きをする。
The metal screw 10 serves to fix the object 1 to be plated and to conduct electricity.

陰極用リング状シールド板11.スペーサ12は絶縁物
であり、メッキ液に侵されないものであれば良い。
Cathode ring-shaped shield plate 11. The spacer 12 may be any insulating material as long as it is not corroded by the plating solution.

第5図は実験に使用したメッキ槽の具体例である。FIG. 5 shows a specific example of the plating bath used in the experiment.

陽極13.メッキ液14以外に冷却管、メッキ液吹出ノ
ズルなどが必要であるが、直接関係がないので省略した
Anode 13. In addition to the plating solution 14, a cooling pipe, a plating solution blowing nozzle, etc. are required, but they are omitted because they are not directly related.

ただし、メッキ槽の大きさ、2つの陽極間の距離は関係
がある。
However, the size of the plating bath and the distance between the two anodes are related.

陰極用リング状シールド板11の外径は被メ・シキ物1
の外径より大きくシ、その内径は被メッキ物1の外径よ
り小さくする。
The outer diameter of the ring-shaped shield plate 11 for the cathode is
The inner diameter is larger than the outer diameter of the object 1 to be plated.

このような構造の陰極用リング状シールド板11を用い
てメッキすると被メッキ物の外周付近の電流の集中が防
止され、円盤メッキ層の各部の電流密度が略々平均化さ
れる。
When plating is performed using the cathode ring-shaped shield plate 11 having such a structure, concentration of current near the outer periphery of the object to be plated is prevented, and the current density in each part of the disk plating layer is approximately averaged.

円盤状の被メッキ物の外径をaφとすると、陰極用リン
グ状シールド板11の外径を1.1a〜1.4a、内径
を0.7 a〜0.9aとしスペーサの長さを被メッキ
物の両面よりシールド板11までの距離が0.13−0
.2 aになるように設定すれば円盤メッキ層の各部の
電流密度が略々平均する。
If the outer diameter of the disk-shaped object to be plated is aφ, then the outer diameter of the cathode ring-shaped shield plate 11 is 1.1a to 1.4a, the inner diameter is 0.7a to 0.9a, and the length of the spacer is covered. The distance from both sides of the plated object to the shield plate 11 is 0.13-0
.. If the current density is set to 2a, the current density in each part of the disk plating layer will be approximately averaged.

より具体的には、第5図に示すメッキ槽と第4図に示す
構造の陰極用リング状シールド板を用い、外径が350
φmm、厚みがlQmmの円盤をメッキする場合、実験
によると陰極用リング状シールド板の外径を430φm
m、内径を280φmmとし、被メッキ物とシールド板
の距離を45mmにした時最も良い結果であった。
More specifically, the plating tank shown in Fig. 5 and the cathode ring-shaped shield plate having the structure shown in Fig. 4 were used, and the outer diameter was 350 mm.
When plating a disk with a diameter of φmm and a thickness of 1Qmm, according to experiments, the outer diameter of the ring-shaped shield plate for the cathode should be 430φm.
The best results were obtained when the inner diameter was 280 mm and the distance between the object to be plated and the shield plate was 45 mm.

即ち、円盤メッキ層の各部の電流密度が略々平均してい
る。
That is, the current density at each part of the disk plating layer is approximately averaged.

本考案は、各部の電流密度をさらに平均化せんとするも
のであり、第6図に本考案の一実施例を示す。
The present invention aims to further average the current density in each part, and FIG. 6 shows an embodiment of the present invention.

第6図において1、第4図と同一物には同一番号を付与
し、その説明(ン省略する。
In FIG. 6, the same parts as 1 and 4 are given the same numbers, and their explanations are omitted.

15は第2の陰極用リング状シールド板であり、絶縁物
である。
15 is a second cathode ring-shaped shield plate, which is an insulator.

この第2の陰極用リング状シールド板15は第1の陰極
用リング状シールド板11と被メッキ物1の間に設ける
This second ring-shaped cathode shield plate 15 is provided between the first cathode ring-shaped shield plate 11 and the object 1 to be plated.

第2の陰極用リング状シールド板15の外径は第1の陰
極用リング状シールド板11の外径より小さくシ、第2
の陰極用ノング状シールド板15の内径は第1の陰極用
リング状シールド板11の内径より大きくする。
The outer diameter of the second ring-shaped shield plate 15 for cathode is smaller than the outer diameter of the first ring-shaped shield plate 11 for cathode.
The inner diameter of the cathode long-shaped shield plate 15 is made larger than the inner diameter of the first cathode ring-shaped shield plate 11.

このような構造の陰極用リング状シールド板を用いてメ
ッキすると被メッキ物の外周付近の電流の集中が防止さ
れ、円盤メッキ層の各部の電流密度が平均化される。
When plating is performed using a cathode ring-shaped shield plate having such a structure, concentration of current near the outer periphery of the object to be plated is prevented, and the current density in each part of the disk plating layer is averaged.

円盤状被メッキ物をメッキする場合、外径をaとし、内
周のメッキ厚と比較して10%以上メッキ厚が増加する
点の径寸法を求める。
When plating a disc-shaped object to be plated, the outer diameter is assumed to be a, and the diameter dimension at the point where the plating thickness increases by 10% or more compared to the inner circumference plating thickness is determined.

第4図の構成でメッキすると0.91 aであり、第6
図に示す本考案の実施例でメッキすると0.932であ
り、本考案の実施例でメッキする方がより外周まで電流
密度が平均化されれ。
When plated with the configuration shown in Figure 4, it is 0.91 a, and the
When plated with the embodiment of the present invention shown in the figure, the current density is 0.932, and the current density is more averaged to the outer periphery when plated with the embodiment of the present invention.

すなわち、第4図の構成のように1つの陰極用リング状
シールド板11だけにより被メッキ物1の外周の電流密
度を平均化するのに比べ、本考案の構成では、大きさの
異なる2つの陰極用リング状シールド板で、電流密度の
平均化を行なうものであるためより平均化できるもので
ある。
That is, compared to the configuration shown in FIG. 4 in which the current density around the outer circumference of the object to be plated 1 is averaged using only one ring-shaped shield plate 11 for the cathode, the configuration of the present invention averages the current density around the outer circumference of the object to be plated 1 by using only one ring-shaped shield plate 11 for the cathode. This is a ring-shaped shield plate for the cathode, and because it averages the current density, it can further average the current density.

円盤状の被メッキ物の外径をaφとすると、第1の陰極
用リング状、シールド板の外径を1.1a〜1.4a、
内径を0.7a〜0.9 a 、被メッキ物のメッキ面
と第1のシールド板の距離を0.1a〜0.2aとし、
第2の陰極用リング状シールド板の外径をa 〜1.1
a 、内径をQ、8a−a、被メッキ物のメッキ面と
第2のシールド板の距離を0.03 a〜0゜07 a
とするシールド構造にすると円盤メッキ層の各部の電流
密度がより平均する。
If the outer diameter of the disk-shaped object to be plated is aφ, then the outer diameter of the first cathode ring shape and shield plate is 1.1a to 1.4a,
The inner diameter is 0.7a to 0.9a, the distance between the plating surface of the object to be plated and the first shield plate is 0.1a to 0.2a,
The outer diameter of the second cathode ring-shaped shield plate is a ~1.1
a, the inner diameter is Q, 8a-a, the distance between the plated surface of the object to be plated and the second shield plate is 0.03a to 0°07a
When the shield structure is adopted, the current density in each part of the disk plating layer becomes more average.

第5図に示すメッキ槽と第6図に示す構造の陰極用リン
グ状シールド板を用い、外径が350φm厚みがlQm
mの円盤をメッキする場合、実験によると、第1の陰極
用リング状シールド板11の外径を430φmm、内径
を280φmm、被メッキ物との距離を45mm、第2
の陰極用リング状シールド板15ノ外径を380φmm
、内径を320φmm、被メッキ物のメッキ面と第2の
シールド板15の距離を18mmとした時最も良い結果
であった。
Using the plating tank shown in Fig. 5 and the cathode ring-shaped shield plate having the structure shown in Fig. 6, the outer diameter is 350φm and the thickness is 1Qm.
According to experiments, when plating a disk of m, the outer diameter of the first cathode ring-shaped shield plate 11 is 430 φ mm, the inner diameter is 280 φ mm, the distance from the object to be plated is 45 mm, and the second
The outer diameter of the ring-shaped shield plate 15 for the cathode is 380φmm.
The best results were obtained when the inner diameter was 320 mm and the distance between the plated surface of the object to be plated and the second shield plate 15 was 18 mm.

即ち、円盤メッキ層の各部の電流密度が平均している。That is, the current density in each part of the disc plating layer is averaged.

以上のように本考案によれば次のように多くの利点があ
る。
As described above, the present invention has many advantages as follows.

1 円盤メッキ層の各部の電流密度が平均し、厚みが一
定となる。
1. The current density in each part of the disc plating layer is averaged, and the thickness is constant.

2 補助電極を使用しない為メッキ作業中電流密度が変
化しない。
2. Current density does not change during plating work because no auxiliary electrode is used.

3 補助電極を使用しない為、被メッキ物に100%メ
ッキされる。
3. Since no auxiliary electrode is used, 100% of the object to be plated is plated.

4 電流密度のコントロールが容易に行なえる。4. Current density can be easily controlled.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図イは円盤状の被メッキ物に付着したメッキ層を示
す平面図、口は同断面図、第2図は従来の補助陰極の構
造を示す斜視図、第3図イは従来の補助陰極の構造を示
す平面図、口は同断面図、第4図イは本考案の前段階と
して考えられる陰極用シールド板の1例を示す断面図、
口は同平面図、第5図イは実験に使用したメッキ槽の側
面図、口は同正面図、第6図イは本考案のメッキ装置の
一実施例を示す断面図、口は同平面図である。 1・・・・・・被メツキ層、2・・・・・・メッキ層、
3・・・・・・補助陰極、4・・・・・・アーム、5・
・・・・・支持アーム、6・・・・・・補助陰極保持体
、7・・・・・・薄膜導電体、8・・・・・・プラスチ
ックネジ、9,10・・・・・・金属ネジ、11・・・
・・・陰極用リング状シールド板、12・・・・・・ス
ペーサ、13・・・・・・陽極、14・・・・・・メッ
キ液、15・・・・・・第2の陰極用リング状シールド
板。
Figure 1A is a plan view showing the plating layer attached to a disc-shaped object to be plated, the opening is a sectional view of the same, Figure 2 is a perspective view showing the structure of a conventional auxiliary cathode, and Figure 3A is a conventional auxiliary cathode. A plan view showing the structure of the cathode, a cross-sectional view of the opening, and a cross-sectional view showing an example of a cathode shield plate considered as a preliminary stage of the present invention.
The opening is a plan view of the same, Figure 5A is a side view of the plating tank used in the experiment, the opening is a front view of the same, and Figure 6A is a sectional view showing an embodiment of the plating apparatus of the present invention, the opening is the same plane. It is a diagram. 1...Plated layer, 2...Plated layer,
3... Auxiliary cathode, 4... Arm, 5...
... Support arm, 6 ... Auxiliary cathode holder, 7 ... Thin film conductor, 8 ... Plastic screw, 9, 10 ... Metal screw, 11...
... Ring-shaped shield plate for cathode, 12 ... Spacer, 13 ... Anode, 14 ... Plating solution, 15 ... For second cathode Ring-shaped shield plate.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 円盤状被メッキ物の両側面にそれぞれ対向して、その被
メッキ物の側面よりそれぞれ所定の距離だけ離れた位置
に外径が前記円盤状被メッキ物より大きく、内径が前記
円盤状被メッキ物より小さい絶縁物よりなる第1の環状
体を配設し、前記第■の環状体と円盤状被メッキ物の間
に、外径が前記円盤状被メッキ物より大きく、内径が前
記第1の環状体の内径より大きく、かつ前記円盤状被メ
ッキ物より小さい絶縁物よりなる第2の環状体を配設し
たメッキ装置。
A disk-shaped object to be plated having an outer diameter larger than that of the disk-shaped object and an inner diameter of the disk-shaped object to be plated is located at a predetermined distance from each side of the object to be plated, facing each side of the disk-shaped object to be plated. A first annular body made of a smaller insulator is disposed between the first annular body and the disc-shaped object to be plated. A plating apparatus comprising a second annular body made of an insulator that is larger than the inner diameter of the annular body and smaller than the disc-shaped object to be plated.
JP1978116997U 1978-08-25 1978-08-25 plating equipment Expired JPS58704Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1978116997U JPS58704Y2 (en) 1978-08-25 1978-08-25 plating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1978116997U JPS58704Y2 (en) 1978-08-25 1978-08-25 plating equipment

Publications (2)

Publication Number Publication Date
JPS5533970U JPS5533970U (en) 1980-03-05
JPS58704Y2 true JPS58704Y2 (en) 1983-01-07

Family

ID=29070037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1978116997U Expired JPS58704Y2 (en) 1978-08-25 1978-08-25 plating equipment

Country Status (1)

Country Link
JP (1) JPS58704Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3568486B2 (en) * 2000-03-29 2004-09-22 三洋電機株式会社 Method for manufacturing semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5445380Y2 (en) * 1976-03-01 1979-12-26

Also Published As

Publication number Publication date
JPS5533970U (en) 1980-03-05

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