JPS5868036A - Sensitizer for photoresist or radiation resist - Google Patents

Sensitizer for photoresist or radiation resist

Info

Publication number
JPS5868036A
JPS5868036A JP16580881A JP16580881A JPS5868036A JP S5868036 A JPS5868036 A JP S5868036A JP 16580881 A JP16580881 A JP 16580881A JP 16580881 A JP16580881 A JP 16580881A JP S5868036 A JPS5868036 A JP S5868036A
Authority
JP
Japan
Prior art keywords
compound
enhanced
ethanol
radiation
sensitizer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16580881A
Other languages
Japanese (ja)
Other versions
JPH0151171B2 (en
Inventor
Fumio Kataoka
文雄 片岡
Fusaji Shoji
房次 庄子
Isao Obara
小原 功
Kazunari Takemoto
一成 竹元
Ataru Yokono
中 横野
Tokio Isogai
磯貝 時男
Mitsumasa Kojima
児嶋 充雅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Hitachi Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP16580881A priority Critical patent/JPS5868036A/en
Publication of JPS5868036A publication Critical patent/JPS5868036A/en
Publication of JPH0151171B2 publication Critical patent/JPH0151171B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/008Azides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

PURPOSE:To attain enhanced solubility in a polar solvent or an alkali soln., enhanced resist sensitivity or the like by using a specified bisazido compound as a sensitizer. CONSTITUTION:A bisazido compound represented by formulaI[where n is 0 or 1; X is -R<1>-OH, -COOR<2>, -SiR3<3>, -OR<4> or halogen (R<1> is lower alkylene; R<2> is H or lower alkyl; and each of R<3> and R<4> is lower alkyl); each of Y and Z is H, -N3, or -SO2N3, when Y is H, Z is -N3 or -SO2N3, and when Z is H, Y is -N3 or -SO2N3], e.g., the compound of formula II or III is used as a sensitizer for a photoresist or a radiation resist. A compound contg. -R<1>-OH (A) as a substituent X in formulaIhas enhanced solubility in a polar solvent. A compound contg. -COOR<2> (B) has enhanced solubility in an alkali soln. A compound contg. -SiR3<3> (C) results in an increased adhesive property to a semiconductor substrate. A compound contg. -OR<4> (D) has enhanced solubility in a polar solvent and enhanced compatibility with a polar polymer. A compound contg. halogen (E) results in increased radiation sensitivity and enhanced resist sensitivity.

Description

【発明の詳細な説明】 本発明はネカ型のフォト又は放射線レジストに用いる新
規なビスアジド系感光剤に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel bisazide photosensitizer for use in negative type photo or radiation resists.

本発明による感光剤と信造的に関連している化合物とし
ては米国特許第2940853号に記載されている2、
6−ビス(p−アジドベンジリデン)ンクロヘキサノン
、2,6−ビス(P−アジドベンジ1)デン)−4−メ
チルシクロヘキサノンあるいは米国特許第374971
3号に記載されている2゜6−ビス(p−アジドベンジ
リデン)−4−ヒドロキシンクロヘキサノン、2,6−
ビス(p−アジドシンナミIIデン)−4−ヒドロキシ
ンクロへギサノンなどが挙げられるが、シクロヘキサノ
ン環の4位(一般式CI)で表わされる化合物のX)の
置換基の違いに於いて本発明と異なっている。
Compounds that are credibly related to the photosensitizers of the present invention include those described in U.S. Pat. No. 2,940,853;
6-bis(p-azidobenzylidene)cyclohexanone, 2,6-bis(p-azidobenzylidene)-4-methylcyclohexanone or U.S. Patent No. 374971
2゜6-bis(p-azidobenzylidene)-4-hydroxyclohexanone, 2,6-
Examples include bis(p-azidocinnamiiden)-4-hydroxychlorohegisanone, which differs from the present invention in the difference in the substituent at the 4-position (X) of the compound represented by the general formula CI of the cyclohexanone ring. ing.

半導体工業における累子微細加工技術の分野などにおい
て、ビスアジド化合物は微細パターンの形成に腺して使
用されるフォト又は放射線レジストの感光剤として有用
に用いられてlAる。近年の半導体工業の急速な進歩に
伴ない、フォトレジストの製造に於いても広範な機能1
%性回上が求められているが初め引用しにビスアジド化
合物群は有機溶剤に対Tる溶解性およびベース樹脂との
相溶性の制約からポ11イソプレン、ボ11ブタジン等
のゴム糸フォトレジストに使用が限られていた。
In the field of microfabrication technology in the semiconductor industry, bisazide compounds are usefully used as photosensitizers in photo or radiation resists used to form fine patterns. With the rapid progress of the semiconductor industry in recent years, a wide range of functions have been developed in the production of photoresists1.
First of all, bisazide compounds are used in rubber thread photoresists such as poly-11 isoprene and poly-11 butadine due to their solubility in organic solvents and compatibility with base resins. Use was limited.

第2に引用したイじ合物群は溶解性の観、壱から前記ビ
ス了52ドに数置に加えたものであるが、前駆体たる4
−ヒドロギシンクロヘキサノンの市販原料からの収率が
著しく低い(165%、 D、E Emmertand
 D、 Lednicer、 orB、 Prep、 
Procedl、 1(2)、 127−129(19
69)ことなどから実用性に問題があった。
The second group of compounds cited above is one that has been added to the above-mentioned bis 52 compound from the point of view of solubility.
- Significantly low yield of hydroxycin clohexanone from commercially available raw materials (165%, D, E Emmertand
D, Lednicer, orB, Prep,
Procedl., 1(2), 127-129(19
69) There were problems with practicality.

この佃にも現用のビスアジド化合物には以下の、Qに改
善又は特性向上が望まれている。
In this case, the following improvements in Q or properties are desired for the currently used bisazide compounds.

アルカ11水溶液による現像はレジスト膨潤が少ないた
め微細パターン形成に有効な方法として知られているが
、手配ビスアジド化合物はアルカ1)水溶液に対重る浴
m性が乏しいためこの埃稼法を用いることができない。
Development with an alkali aqueous solution is known as an effective method for forming fine patterns because it causes little resist swelling, but this dust-producing method cannot be used because a bisazide compound has poor bath properties compared to an alkali aqueous solution. I can't.

父、半導体基板とレジストとの接着性は素子微バー11
加工の祐黒゛1歩止りに中要な役割を果丁ので向上の望
1れている特性であるが、功用ビス了シト化合物は基8
i表面(無機質)との相互作用に乏しいため接着性の面
では寄与が少ない。
Father, the adhesion between the semiconductor substrate and the resist is the element microbar 11.
It is a property that is desired to be improved because it plays an important role in the first step of processing, but the functional bis-recipitate compound has the following properties:
Since it has poor interaction with the i-surface (inorganic), it makes little contribution in terms of adhesiveness.

ヌ、ビスアジド化合物は光のみならず放射線に対しても
感応下るが、エネルギーの吸収効率が低いためこれ?用
いにレジストは感度が低い。
Bisazide compounds are sensitive not only to light but also to radiation, but this is due to their low energy absorption efficiency. Resists have low sensitivity when used.

本発明の目的に、上記した駅用ビスアジド化合物の欠点
をなくしたフォトヌは放射線レジスト用感光剤を提供す
るにある。
The object of the present invention is to provide a photosensitizer for radiation resists that eliminates the drawbacks of the above-mentioned bisazide compounds.

上記目的を達ffTるkめに鋭意検討した結果、一般式 %式% −3iR;、−OR’、ハロゲン(R玉低級了ルキレン
基、R2は水素又は低級アルキル基、R5、Rtは低級
アルキル基を表わす。)から選択されに基、Y、Zは水
素又は−N、又は−3o2N、を表ゎり、  Yが水素
の時1ff−N、ヌは一3o2N、、  Zが水素の時
Yfl−N3又1d−3o2N、である。〕で表わされ
るビスアジド化合物が置換基Xの違いによって前述した
個々の目的に合致したフォト又は放射線レジスト用感光
剤となることを見い出し、これらを合成した。
As a result of intensive studies to achieve the above objectives, we found that the general formula % -3iR;, -OR', halogen (R lower arykylene group, R2 is hydrogen or lower alkyl group, R5, Rt are lower alkyl Y and Z represent hydrogen, -N, or -3o2N, and when Y is hydrogen, 1ff-N, nu is -3o2N, and when Z is hydrogen, Yfl- N3 or 1d-3o2N. It was discovered that the bisazide compounds represented by the following formula can be used as photosensitizers for photo or radiation resists that meet the above-mentioned individual objectives depending on the difference in the substituent X, and these were synthesized.

以下1本発明について詳細に説明下る。The present invention will be explained in detail below.

置換基Xを−R’−OH(但し R1は低級アルキレン
基を表わ丁。)とした場合1分子内に極性な水酸基が導
入されるため、Xがアルキルの場合に比べて化合物CI
)の極性溶剤に対する溶解性は大幅に向上する。この場
合CI)は1級アルコールであるので、2級アルコール
であるX=−OHの場合に片べてもより極性が高まり、
極性溶剤に対する溶解性が大幅に向上すると共に極性ポ
リマとの相溶性も艮くなっfco この結果、フォト又
は放射線レレスト用ベースボ117も極性ボ1】マを含
んだ広い範囲から選択できるようになった。
When the substituent X is -R'-OH (where R1 represents a lower alkylene group), a polar hydroxyl group is introduced into one molecule, so the compound CI
) in polar solvents is significantly improved. In this case, CI) is a primary alcohol, so if X = -OH, which is a secondary alcohol, it becomes more polar,
The solubility in polar solvents is greatly improved, and the compatibility with polar polymers is also reduced.As a result, the base plate 117 for photo or radiation suppression can now be selected from a wide range including polar polymers. .

置換基X ’f−COOHとした場合、ビスアジド化合
物の分子内に酸性基が導入されるためアルカリ水溶液に
対Tる溶解性が大きくなる。このため、従来のビスアジ
ド化合物を用いたフォトレジストでは問題点のあったア
ルカ11現像が本化合物を用いることにより極めて容易
となった。
When the substituent X'f-COOH is used, an acidic group is introduced into the molecule of the bisazide compound, so that the solubility in an alkaline aqueous solution increases. Therefore, the alkali 11 development, which has been problematic with conventional photoresists using bisazide compounds, has become extremely easy with the use of this compound.

置換基Xを一3iR: (但し R3は低級アルキル基
を表わ丁。)とした場合、基板下地の無機質との相互作
用が有機成分のみからなるビスアジド化合物に片べて増
大するためこれを感光剤とするレジストは半導体基板と
の接着性が大幅に同上する。
When the substituent X is -3iR: (where R3 represents a lower alkyl group), the interaction with the inorganic substance underlying the substrate is increased compared to the bisazide compound consisting only of organic components, so it is not exposed to light. The adhesiveness of the resist used as the agent to the semiconductor substrate is significantly the same as above.

置換基Xを一0R4(但し、 R’fl低級アルキル基
を表わ丁。)とし女湯合1分子内に極性なメトキシ基が
導入されるためXがアルキル基に比べて化合物CI)の
榛性溶剤に対重る溶解性、極性ポリマに対する相溶性が
向上する。但し、Xが水酸基の場合に比べると上記のい
ずれの特徴においてもその効果は若干低い傾向にある。
Since the substituent X is 10R4 (however, R'fl represents a lower alkyl group) and a polar methoxy group is introduced into one molecule, Improves solubility in polar solvents and compatibility with polar polymers. However, compared to the case where X is a hydroxyl group, the effects tend to be slightly lower in all of the above characteristics.

しかしながら本化合物が大きな%徴とするところに前駆
体の収率が極めて萬い点にあり工業的観、壱からの効果
は極めて大きい。即ち、前駆体である4−メトキシシク
ロヘキサノンはP−メトキシフェノールから水素添加と
それにわtくクロム酸酸化によって70%以上の高収藁
で得ることができる。
However, the yield of the precursor is extremely low even though the present compound has a large percentage value, and from an industrial perspective, the effect is extremely large. That is, the precursor 4-methoxycyclohexanone can be obtained from P-methoxyphenol with a high yield of 70% or more by hydrogenation and chromic acid oxidation.

#換基Xをハロゲンとした場合、従来のビスアシト化合
物とに異なって分子を構成する原子群の中に密度の高い
屯絆子ハロゲンを含むkめ、′市午i、X&!なとの放
射線エイ・ルキー吸収効率が増大−「る。このfcW>
放射線しtンスト用感元剤として用いたJZ3合にはか
・射線感応性が大きくなりハロゲンを含寸ないものに比
べしiンスト感度が向上する。
# When the substituent X is a halogen, unlike conventional bisacyto compounds, the atomic group that makes up the molecule contains a high-density halogen. Radiation radiation absorption efficiency increases - "Ru. This fcW>
When JZ3 is used as a sensitizing agent for irradiation, the radiation sensitivity is increased and the irradiation sensitivity is improved compared to that containing no halogen.

り下、木ヅ己明によって1R−供されるビス了亡ンド化
合物とその合成法を実施例によって説明する。
Below, the 1R-benzened compound provided by Kimiaki Kizu and its synthesis method will be explained with reference to Examples.

実施例12.6−ジ(4′−アジドベンザル)−4−ヒ
ドロキンメチルンクロヘキサノンttE、 jung、
 R,W Brownらの方法(Tetrahadro
nLet、t、、、2771〜2774(1978))
に従って合成した4−ヒトロギンメチルンクロへギザノ
ン1g。
Example 12.6-di(4'-azidobenzal)-4-hydroquinemethylen clohexanone ttE, jung,
The method of R, W Brown et al. (Tetrahadro
nLet, t,, 2771-2774 (1978))
1 g of 4-hytrogine methylun clohegizanone synthesized according to the method.

バラ了シトベンヌ゛了ルデヒ)’ 3 i ’xエタノ
ール10m犯に溶乃・9し、0.49の水酸化ナトII
ウムを04m1(1)/KMこfc4 V L fc溶
液w175ii−加え、かっ色フラスコ中室温で2日間
反応させた。吸引口過によって化1ノlj L fc結
晶を分は収り、エタノール洗浄後エチルセロソルブから
再結晶して分解点145−155℃(示差熱分析法、昇
温速度5℃/m1n)の黄色結晶05Iを得た。この生
成物はスペクトル分析により題記の化合物であることを
確認しに0以下に生成物の構造に特徴的な赤外吸収スペ
クトルのデータ及び元素分析値を示T。赤外吸収。
3 i 'x 10 m of ethanol dissolved in 10 m of ethanol, 0.49 sodium hydroxide II
04ml(1)/KM fc4 V L fc solution w175ii- was added thereto, and the mixture was allowed to react in a brown flask at room temperature for 2 days. The L fc crystals were collected by suction, washed with ethanol, and then recrystallized from ethyl cellosolve to give yellow crystals with a decomposition point of 145-155°C (differential thermal analysis, heating rate 5°C/m1n). 05I was obtained. This product was confirmed to be the title compound by spectral analysis, and infrared absorption spectrum data and elemental analysis values characteristic of the structure of the product were shown below 0. Infrared absorption.

16oocm’(\C=O)、2130cm ’(N3
)。元素/ 分析” 21H1802N6  としての計算値: C
,65,3;H。
16oocm' (\C=O), 2130cm' (N3
). Element / Analysis” Calculated value as 21H1802N6: C
,65,3;H.

4.7;N、21.8夫験値:C,65,5;H,4,
7;N;22.0゜2.6−ジ(4′−7ジドベンザル
)−4−ヒドロキシンクロヘキサノンに比べ1本生成物
は6倍以上のメチルセロソルブに対する溶解性を示し女
4.7; N, 21.8 Empirical value: C, 65.5; H, 4,
7; N; 22.0° 2.6-di(4'-7didobenzal)-4-hydroxyl The product showed more than 6 times the solubility in methyl cellosolve compared to clohexanone.

実ts例22.6−ジ(4′−アジドシンナミリデン)
−4−とドロキシメチルシクロヘキサノン4−ヒドロキ
シメチルiノグロへキサノン12゜バラ7ジドケイ皮ア
ルテヒ)’ 3.5 g 、エタノール15m2から成
るけん濁液に水酸化す1・IIウム・ 7 052、水0.8yから成る溶液を加えかっ色フラスコ
中室温2日間檀拌した。生成した紗晶を吸引口過KLっ
て分は収りエタノールで洗浄しに後、エチルセロソルブ
から再結晶して分解点160−165℃(示差熱分析法
、昇温速度5℃/m1n)の橙色結晶0.6 、q ’
ltr、jた。この生成物にスペクトル分析により題H
1の化合物であること乞確認しに0赤外吸収: 160
0cm ’ (\C=O) 、2150cm ’(−N
3)。
Actual ts Example 22.6-di(4'-azidocinnamylidene)
-4- and Droxymethyl cyclohexanone 4-Hydroxymethyl i Noglohexanone 12゜Bara 7 Didocinnamate Altehy)' 3.5 g, 1.IIium hydroxide 7052, water in a suspension consisting of 15 m2 of ethanol. A solution consisting of 0.8y was added and stirred at room temperature for 2 days in a brown flask. The formed gauze crystal was filtered through a suction port, washed with ethanol, and then recrystallized from ethyl cellosolve with a decomposition point of 160-165°C (differential thermal analysis, heating rate 5°C/m1n). Orange crystal 0.6, q'
ltr, j. Spectral analysis revealed that this product had the title H.
0 infrared absorption to confirm that it is a compound of No. 1: 160
0cm' (\C=O), 2150cm' (-N
3).

/ 元素分析” 2SH2202Ndとしての計算値:C,
68,5;H、5,Oi  N  、  1 9. 2
  ’4ノ;f験イ@  :  C,68,7;H,4
,7;H,18,9゜2.6−ジ(4′−7ジドンンナ
ミ11テン)−4−ヒドロキシンクロへキサノンに比べ
1本生成物は2倍り」−のメチルセロソルブに対する溶
解性を示しに0 実施fl13 2 、6−ジ(4′−7,ンドベンザル
)−4−カルポギノルノグロヘキザノン 4−メトキンカルボニルシクロへキサノン52゜パラア
ジドベンズテルデヒド1011を50mAのエタノール
に溶解し、2tの水酸化ナトリウムを4m2 の水に溶
解した溶液を加え、かっ色フラスコ中で6時間還流し女
。吸引口過によって生成した結晶を分は取り、次いでこ
れを希塩酸で数回処理しに0水による洗浄の後、メタノ
ールから再結晶して分解点150〜155℃(示差熱分
析法、昇温速度5℃/m1n)の黄橙色結晶t e 1
 y、、(得に0この生成物はスペクトル分析1允素分
析、ブロモチモールブルーによるカルボキシル基の比色
試験により頭記の化合物であること乞確認した。赤外吸
収:1600cm’(”C=0)、2130cm  ’
(−N5)。元素/ 分析゛C21H460,N6としての計算値:C,63
,[l;H。
/ Elemental analysis” Calculated value as 2SH2202Nd: C,
68,5; H, 5, Oi N , 19. 2
'4ノ; f test i @: C, 68, 7; H, 4
,7; 0 Implementation fl13 2,6-di(4'-7,dobenzal)-4-carpogynornoglohexanone 4-methquine carbonylcyclohexanone 52° paraazidobenzterdehyde 1011 was dissolved in 50 mA ethanol, A solution of 2 tons of sodium hydroxide dissolved in 4 m2 of water was added and refluxed for 6 hours in a brown flask. The crystals generated by filtration through the suction port were collected, and then treated with dilute hydrochloric acid several times, washed with zero water, and then recrystallized from methanol with a decomposition point of 150 to 155°C (differential thermal analysis, heating rate). 5℃/m1n) yellow-orange crystals t e 1
y,, (particularly 0) This product was confirmed to be the above compound by spectral analysis, elemental analysis, and colorimetric test of carboxyl group with bromothymol blue. Infrared absorption: 1600 cm'("C= 0), 2130cm'
(-N5). Element/ Analysis ゛C21H460, Calculated value as N6: C, 63
,[l;H.

4.0 ;N 、 2 +、o 、実測値:C,62,
6;H,3,9;H,20,6゜実施例42,6−ジ(
4′−アジドシンナミリデン)−4−カルボキシルンク
ロへキサノン4−メトキシカルボニルシクロへキサノン
12、パラアジドケイ皮アルデヒド2y’、r10J2
のエタ7ノールに’fR岸fL、0.4 p(7)Na
OH乞4mRの水に浴厘〔した浴液を加え、かっ色フラ
スコ中で50℃6時間反応させた。吸引口過に、Uっで
生成した結晶を分は取り、次いでこれに希塩酸で数回処
理した。水による洗浄の後ノヂルセロソルブかう再結晶
して分解点165−170℃(示差熱分析法、昇温、’
+l += 5℃/m1n)の橙色結晶031?得に0
この生成物(rlスベグトル分分析9素素析、ブロモチ
モールブルーによる1ヒ色試験により連記の化合物であ
ること”e 6(tl認しに、赤外吸収 1595cm
’(ゝc =o) 。
4.0; N, 2 +, o, actual value: C, 62,
6;H,3,9;H,20,6゜Example 42,6-di(
4'-azidocinnamylidene)-4-carboxylcyclohexanone 4-methoxycarbonylcyclohexanone 12, paraazidocinnamaldehyde 2y', r10J2
'fR shorefL, 0.4 p(7)Na to the ethanol 7Nol
The bath solution was added to 4 mR of OH water and reacted in a brown flask at 50°C for 6 hours. A portion of the crystals generated in U was collected through a suction port, and then treated with dilute hydrochloric acid several times. After washing with water, the cellosolve was recrystallized with a decomposition point of 165-170°C (differential thermal analysis, temperature increase,
+l += 5℃/m1n) orange crystal 031? 0%
This product (rl svegtol fraction analysis, 9-element analysis, bromothymol blue 1-color test shows that it is the compound listed in the list).
'(ゝc=o).

/ 2140cm−’(−N5)。元素分析 C2,H2o
O3N6 としての31 p“11白   C,66,
4;H,4,4;を寸 、18.6.  実測イp  
 C。
/2140cm-'(-N5). Elemental analysis C2, H2o
31 p“11 white C,66, as O3N6
4; H, 4, 4; dimensions, 18.6. Actual IP
C.

59.9:H,4,5;N、18.2゜実施イ列5 2
.6−、/(4’−アジドベンザル)−4−工1−キン
カルボニルシクロヘキサノン実施例5でイ1、;られに
2,6−ジ(4′−アジドベンザル)−4−カルホキジ
ルカルボニルシクロへキサノン0.81を10mRのエ
タノールに加えてけん濁液とした。次に畠硫酸?数滴加
えた後ろ時間還流した。冷却後、得られた結晶を吸引口
過によって分は収り、水洗浄の後アルコールから再結晶
して分解点150−155℃(示差熱分析法、昇温速度
5℃/m1n)の黄橙色の結晶0.5 f’lax得た
。この生成物はスペクトル分析9兄素分析から連記の化
合物であることを確認した。赤外吸収 1595cm’
(′C−0) 、 2140cm ’(−N5)。元素
分析’ C27H2405/ Nとしての利算値 C,67,5,H,5,O;N、1
7.5゜実測価:C,67,3;H,4,9;N、16
.9゜実施例62,6−ジ(4′〜アジドベンザル)−
4−トリメチルシリルンクロへキサノン4−トリメチル
シリルシクロへキサノン17t。
59.9: H, 4, 5; N, 18.2° Implementation A row 5 2
.. 6-,/(4'-azidobenzal)-4-carboxylcarbonylcyclohexanone In Example 5, 2,6-di(4'-azidobenzal)-4-carboxylcarbonylcyclohexanone 0.81 was added to 10 mR of ethanol to make a suspension. Next is Hatake sulfuric acid? A few drops were added and then refluxed for an hour. After cooling, the obtained crystals were filtered through a suction port, washed with water, and then recrystallized from alcohol to give a yellow-orange color with a decomposition point of 150-155°C (differential thermal analysis, heating rate 5°C/m1n). Crystals of 0.5 f'lax were obtained. This product was confirmed to be the compound mentioned above from spectral analysis. Infrared absorption 1595cm'
('C-0), 2140cm' (-N5). Elemental analysis' C27H2405/ Profit value as N C,67,5,H,5,O;N,1
7.5゜ Actual value: C, 67,3; H, 4,9; N, 16
.. 9゜Example 62,6-di(4'-azidobenzal)-
4-Trimethylsilylcyclohexanone 4-trimethylsilylcyclohexanone 17t.

パラアジドベンズアルデヒド22#’&100n12の
エタノールに溶解し、1tの水酸化ナトリウムを1 1mRの水に’Aii jQすI した浴液を加え、か
っ色フラスコ中室温で2日間反応させR0吸引口過によ
って生成した結晶を分は収り、エタノールとエチルセロ
ソルブの混合液から再結晶して分解小145−150℃
(示差熱分析法、昇温速度5℃/m1n)の黄色結晶4
.29”;l f7i°に0この生成物はスペクトル分
析及び元素分析(でより連記の化合物であること馨確認
した。赤外吸収:1600cm’(ゝC=0) 、 2
130aml’/ (−旧)。元素分析 C,H24ON6S工としての計
算価。
Dissolve paraazidobenzaldehyde in 22#'& 100n12 of ethanol, add 1 t of sodium hydroxide to 11 mR of water and react for 2 days at room temperature in a brown flask, and pass through the R0 suction port. The formed crystals were collected for a while, recrystallized from a mixture of ethanol and ethyl cellosolve, and decomposed at 145-150°C.
(differential thermal analysis, heating rate 5°C/m1n) yellow crystal 4
.. 29''; 0 at f7i° This product was confirmed to be the compound listed above through spectral analysis and elemental analysis. Infrared absorption: 1600 cm' (C=0), 2
130aml'/ (-old). Elemental analysis Calculated value as C, H24ON6S engineering.

C,64,5;H,5,6;N、  196 、  実
験イ面 :C,64,7;H。
C, 64,5; H, 5, 6; N, 196, Experiment I: C, 64, 7; H.

5.2;N、19.5゜ 実施例72.6−ジ(4′−アジドシンナミリデン)−
4−トリフチルシクロヘキサノン4−トリメチルシリル
ンクロへキサノン152゜バラアジドケイ皮アルデヒド
2.5y、エタノール15m2から成るけん濁液に水酸
化ナトリウノso、2yt水049から成る溶液ン加え
、かっ色フラスコ中・ 12 室温で2日間攪拌し女。生成した結晶を吸引口過によっ
て分は取りエタノールで洗浄後、エチルセロソルブから
再結晶して分解、l、1.1165−170℃(示差熱
分析法、昇温速度5℃/m1n)の橙色結晶042を得
た。この生成物はスペクトル分析及び元素分析により連
記の化合物であることを確認した。赤外吸収: 159
5cm ’ (ゝC=0) 、 2150cm ’(−
N、)。
5.2; N, 19.5° Example 72.6-di(4'-azidocinnamylidene)-
4-Triphthylcyclohexanone 4-Trimethylsilylcyclohexanone To a suspension consisting of 152゜ azidocinnamic aldehyde 2.5y and ethanol 15m2 was added a solution consisting of sodium hydroxide and 2yt water 049, in a brown flask.12 at room temperature. A woman who stirred for two days. The formed crystals were filtered through a suction port, washed with ethanol, recrystallized from ethyl cellosolve and decomposed, yielding orange crystals of 1.165-170°C (differential thermal analysis, heating rate 5°C/m1n). 042 was obtained. This product was confirmed to be the compound mentioned above by spectral analysis and elemental analysis. Infrared absorption: 159
5cm' (ゝC=0), 2150cm'(-
N,).

/ 元素分析゛C27H28ON6S1としての計算値:C
,67,5iH,5,8;N、17.5.実験値 C,
67,4,H,5,7:N。
/ Elemental analysis ゛Calculated value as C27H28ON6S1: C
,67,5iH,5,8;N,17.5. Experimental value C,
67,4,H,5,7:N.

172゜ 実施例82.6−ジ(4′−アジドベンザル)−4−メ
トキシンクロヘキサノン 4−メトキンシクロへキサノン10#、バラアジドベン
ズアルデヒド30#をエタノール100mf!。
172゜Example 82. 6-di(4'-azidobenzal)-4-methoxine clohexanone 10# of 4-methoxycyclohexanone and 30# of baraazidobenzaldehyde in 100 mf of ethanol! .

に溶解し、1tの水酸化ナトリウム71nJの水に溶解
した溶液?加え、かっ色フラスコ中室温で2日間々応さ
せた。吸引口過によって生成した結晶ヶ分けIIYす、
エタノール洗浄後エチルセロソルブからFS Mr□品
して分l?1I(y:、i 145−150℃(示差熱
分析法、Y1温斗度5℃/nn1n)の黄色結晶471
を得几。
A solution of 1 t of sodium hydroxide dissolved in 71 nJ of water? The mixture was then allowed to react in a brown flask at room temperature for two days. Separation of the crystals generated by the suction port IIY,
After washing with ethanol, remove 1 liter of FS Mr□ from ethyl cellosolve. 1I (y:, i 145-150°C (differential thermal analysis, Y1 temperature 5°C/nn1n) yellow crystal 471
Get it.

この主成物はスペクトル分析及び元素分析により題31
′の化合物であること”x 1m: W2しに0赤外吸
収1600cm’−’(\[:=O) 、2130cm
 ’(−N3)。元素分/ (ブl” C21H1802N6としての泪算領: C
,65,3;H,4,7;N、21.8.実験値 C,
65,1;H,4,7;N、21.5゜実施例92.6
〜ジ(4′−アジドシンナミリデン)−4−メトギ7ン
ク口へキサノン 4−メトキシンクロへキサノン1!、バラアジドケイ皮
アルデヒド35F、エタノール15mρから成るけんン
蜀1+に水酸化ナトリウム05t、水08gからIJY
るMU?加えかっ色フラスコ中2日間攪拌しfc、生成
した結晶?吸引17過によって分は収りエタノールで洗
浄した後、エチルセロソルブから再結晶して分力’f、
I、’、、i + 65 170℃(示差熱分析法)。
This main component was identified by spectral analysis and elemental analysis.
'x 1m: W2 0 infrared absorption 1600cm'-'(\[:=O), 2130cm
'(-N3). Elemental content/(Blue) C21H1802N6 calculation: C
,65,3;H,4,7;N,21.8. Experimental value C,
65,1; H, 4,7; N, 21.5° Example 92.6
~Di(4'-azidocinnamylidene)-4-methoxy 7 to xanone 4-methoxin chlor to xanone 1! IJY from 05t of sodium hydroxide and 08g of water to Kenshu 1+ consisting of 35F of roseazide cinnamic aldehyde and 15mρ of ethanol.
RuMU? After stirring in a brown flask for 2 days, crystals were formed. After 17 filtration of suction, the fraction was collected, washed with ethanol, and then recrystallized from ethyl cellosolve.
I,',, i + 65 170°C (differential thermal analysis method).

昇温速度5℃/m1n)の橙色結晶051を得R0この
生成物はスペクトル分析9九素分析によって連記のイじ
合物であること乞確認した。赤外吸収。
Orange crystal 051 was obtained at a heating rate of 5°C/m1n).This product was confirmed by spectral analysis to be the same compound as described above. Infrared absorption.

1100cm’(−0CHx)、1600cm  (/
C=0)。
1100cm' (-0CHx), 1600cm (/
C=0).

2150cm ’ (−Na)。元素分析’ C25H
2202N/、  としての計算値 C,68,5iH
,5,OiN、19.2.実験値。
2150 cm' (-Na). Elemental analysis' C25H
2202N/, calculated value as C,68,5iH
,5,OiN,19.2. Experimental value.

C,68,1;H,4,8;N、19.0゜実施例10
 2.6−ジ(4′−アジドベンザル)−4−クロロシ
クロ−キサノン 4−クロロシクロへギザノン1f、バラアジドベンズア
ルデヒド3trエタノール10mβに溶解し、0.1f
の水酸化ナトリウムを0.1mlの水に溶触した溶液を
加え、かっ色フラスコ中室温で2日m1反応させに0吸
引口過によって生成しん結晶を分は取り、エタノール洗
浄後エタノールとエチルセロソルブの混液から再結晶し
て分解点145−150℃(示差熱分析広、契温速度5
℃/m i n )の黄色結5 晶0ろt 馨11r ft a この生成物にバイルン
ユタインテスト(陽性を示しIC)、スペクトル分析に
工V題配り1し合物であることを確認し声。赤外吸収1
595cm ’ (、c=o ) 、2已Gem’(−
N3)。
C, 68,1; H, 4,8; N, 19.0° Example 10
2.6-Di(4'-azidobenzal)-4-chlorocyclo-xanone 4-chlorocyclohegizanone 1f, barazidobenzaldehyde 3tr Dissolved in ethanol 10mβ, 0.1f
Add a solution of sodium hydroxide dissolved in 0.1 ml of water, react in a brown flask at room temperature for 2 days, remove the formed crystals by filtration with zero suction, and wash with ethanol. Recrystallized from the mixed solution with a decomposition point of 145-150°C (differential thermal analysis wide, contract temperature rate 5
℃/min) Yellow crystals 5 0 filtration 11 r ft a This product was subjected to Bayrunutain test (positive result was IC) and spectral analysis was conducted to confirm that it was a compound. A voice. Infrared absorption 1
595 cm' (, c=o), 2 Gem' (-
N3).

′実施例11 2,6−ジ(4′−アジドベンザル)−
4−ブ自モンク[J−\キサノン 4−)゛自モ7り[1ヘキサン1g、バラアジドベンズ
アルデヒド33をエタノール10mRに溶解し、012
水酸化ナトリウノ4 Y o、 1 mρの水に溶解し
kC賓液?加え、かっ色フラスコ中室温で2日間反応さ
せた。吸引口過によって生成した結晶を分は取り、エタ
ノール洗浄後エタノールとエチルセロソルブの混液から
再結晶して分解、+j、5140150℃(示差熱分析
法、昇11.1速度5℃/m1n)の黄色結晶031 
’l ?’j ft: 0 この生成物はパイルンユタ
インテスト(陽性)、スペクトル分析にエリtLMeの
化合物であることq (1゛l+謔した。赤外吸収:i
60Dcm’°16 (\C=O) 、 2130cm ’ (−Ng)。
'Example 11 2,6-di(4'-azidobenzal)-
4-butomonk [J-\xanone 4-)゛omo7ri [1 Dissolve 1g of hexane and 33% of barazidobenzaldehyde in 10mR of ethanol, 012
Sodium hydroxide 4 Y o, 1 mρ dissolved in kC solution? The mixture was added and reacted for 2 days at room temperature in a brown flask. The crystals generated by filtration through the suction port were removed, washed with ethanol, recrystallized from a mixture of ethanol and ethyl cellosolve, and decomposed, giving a yellow color of +j, 5140150°C (differential thermal analysis, rate of increase 11.1 5°C/m1n). crystal 031
'l? 'j ft: 0 This product was found to be a compound of ElytLMe in the Pailungutaine test (positive) and spectral analysis.
60Dcm'°16 (\C=O), 2130cm' (-Ng).

/ 以上詳述し几ように本発明により極性浴剤に対する溶解
性、アルカリ現像性、無機角基板との接層性、放射線感
応性などの応で大幅に特性向上のなされるフォト又は放
射線レジヌト用感光剤?提供することができた。
/ As described in detail above, the present invention provides a photo or radiation resin material with significantly improved properties such as solubility in polar bath agents, alkaline developability, contact with inorganic square substrates, and radiation sensitivity. Photosensitizer? I was able to provide it.

第1頁の続き @発 明 者 横野中 横浜市戸塚区吉田町292番地株 式会社日立製作所生産技術研究 所内 @発 明 者 磯貝時男 横浜市戸塚区吉田町292番地株 式会社日立製作所生産技術研究 所内 Q)発 明 者 児嶋充雅 日立市東町四丁目13番1号日立 化成工業株式会社山崎工場内 0出 願 人 日立化成工業株式会社 東京都新宿区西新宿2丁目1番 1号 210−Continuation of page 1 @From Yokono Junior High School 292 Yoshida-cho, Totsuka-ku, Yokohama Production technology research company Hitachi, Ltd. Inside the office @Publisher Tokio Isogai 292 Yoshida-cho, Totsuka-ku, Yokohama Production technology research company Hitachi, Ltd. Inside the office Q) Initiator Mitsumasa Kojima Hitachi 4-13-1 Higashimachi, Hitachi City Kasei Kogyo Co., Ltd. Yamazaki Factory 0 applicants Hitachi Chemical Co., Ltd. 2-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo No. 1 210-

Claims (1)

【特許請求の範囲】 一般式 %式% −8iR5,−OR’ 、ハロゲン(R1に低級了ルギ
レン基、R2は水素ヌに低級アルギル基、 R’、R’
は低級アルギル基を表わ丁。)から遷択された基、Y。 Zに水素又は−N、ヌに一3o2N、  を表わl、Y
が水素の11、〒Zに−N、ヌに一3O2N、、  Z
が水素の時Yは−N、又は−3O2N、である。〕で表
わされる化合物!ITから選択されたフォー・ヌは紗射
線レジスト用IIへ光削。 2一般式CI)においてR1は−CH2−、R2に水素
父に−CH,ヌに−C2H5,R’、R’に−CH,、
ハロケンとしてはBr 又にC2である特許請求の範囲
第11”4記載のフAト又は放射線レジスト用感光剤。
[Claims] General formula % -8iR5, -OR', halogen (R1 is a lower argylene group, R2 is hydrogen and a lower argyl group, R', R'
represents a lower argyl group. ), the group selected from Y. Z represents hydrogen or -N, N represents -3o2N, l, Y
is 11 for hydrogen, -N for Z, -3O2N for N,, Z
When is hydrogen, Y is -N or -3O2N. ] A compound represented by! Four Nu, selected from IT, was optically polished to Sharay resist II. 2 General formula CI), R1 is -CH2-, R2 is -CH, hydrogen is -C2H5, R', R' is -CH,
The photosensitizer for photo- or radiation resists according to claim 11, wherein the halogen is Br or C2.
JP16580881A 1981-10-19 1981-10-19 Sensitizer for photoresist or radiation resist Granted JPS5868036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16580881A JPS5868036A (en) 1981-10-19 1981-10-19 Sensitizer for photoresist or radiation resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16580881A JPS5868036A (en) 1981-10-19 1981-10-19 Sensitizer for photoresist or radiation resist

Publications (2)

Publication Number Publication Date
JPS5868036A true JPS5868036A (en) 1983-04-22
JPH0151171B2 JPH0151171B2 (en) 1989-11-01

Family

ID=15819383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16580881A Granted JPS5868036A (en) 1981-10-19 1981-10-19 Sensitizer for photoresist or radiation resist

Country Status (1)

Country Link
JP (1) JPS5868036A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60238827A (en) * 1984-05-14 1985-11-27 Nippon Telegr & Teleph Corp <Ntt> Photosensitive resin composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60238827A (en) * 1984-05-14 1985-11-27 Nippon Telegr & Teleph Corp <Ntt> Photosensitive resin composition
JPH0344291B2 (en) * 1984-05-14 1991-07-05 Nippon Telegraph & Telephone

Also Published As

Publication number Publication date
JPH0151171B2 (en) 1989-11-01

Similar Documents

Publication Publication Date Title
JPWO2005097725A1 (en) Calix resorcinarene compound, photoresist substrate and composition thereof
US5114816A (en) Radiation-sensitive compounds, radiation-sensitive mixture prepared therewith and copying material
US4522911A (en) Deep ultra-violet lithographic resists with diazohomotetramic acid compounds
JPH06214395A (en) Positive type photoresist composition
JPS61223837A (en) Lithography resist
JPS5868036A (en) Sensitizer for photoresist or radiation resist
JP3312756B2 (en) Fluorescent material
US4728594A (en) Photosensitive composition with azide or bisazide compound with oxazolone group
JPH01146845A (en) Novel squarylium compound and production thereof
JP4168191B2 (en) Sulphonium salt compound and photosensitive resin composition containing the same
JPS614765A (en) Novel disazo compound and production thereof
SU613590A1 (en) Derivatives of 4,4-diazidostylbene-2,2-disulfonic acid as photo-cross-linking agents
JPH02164874A (en) Purification of bisazo pigment
JPH01209445A (en) Radiation sensitive material
JPS6151063A (en) Tetrazonium salt compound, disazo compound and production thereof
JPS62255492A (en) Triphenylimidazole and dimer thereof
JPH06239930A (en) Production of aqueous solution of water-soluble photosensitive resin
JPS6389570A (en) Novel bisazo compound and production thereof
JPS5984936A (en) Sensitization of photosensitive polymer composition
JPH01110566A (en) Bisazide compound and photosensitive polymer composition containing said compound
JP2014237598A (en) Compound and photo-base generator consisting of the compound
JPH01151573A (en) Novel meldrum&#39;s acid derivative
JPS609060B2 (en) Disazo compound and its manufacturing method
JPH0335061A (en) Bisazo compound and its production
US1442818A (en) Manufacture of aromatic arylsulphonyl and arylene-disulphonyl derivatives of 1:4 naphthylenediamine and its sulphonic acids