JPS5867095A - Method of producing ceramic circuit board - Google Patents
Method of producing ceramic circuit boardInfo
- Publication number
- JPS5867095A JPS5867095A JP16576981A JP16576981A JPS5867095A JP S5867095 A JPS5867095 A JP S5867095A JP 16576981 A JP16576981 A JP 16576981A JP 16576981 A JP16576981 A JP 16576981A JP S5867095 A JPS5867095 A JP S5867095A
- Authority
- JP
- Japan
- Prior art keywords
- steel
- ceramic
- substrate
- plating
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 48
- 238000000034 method Methods 0.000 title claims description 30
- 229910000831 Steel Inorganic materials 0.000 claims description 42
- 239000010959 steel Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 38
- 238000007747 plating Methods 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000011282 treatment Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 229910000510 noble metal Inorganic materials 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000008139 complexing agent Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000006104 solid solution Substances 0.000 claims description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- -1 alkali metal salt Chemical class 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000010970 precious metal Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 206010011732 Cyst Diseases 0.000 claims 1
- 208000031513 cyst Diseases 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 24
- 239000000203 mixture Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 229960004643 cupric oxide Drugs 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000005751 Copper oxide Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- WPTCSQBWLUUYDV-UHFFFAOYSA-N 2-quinolin-2-ylquinoline Chemical compound C1=CC=CC2=NC(C3=NC4=CC=CC=C4C=C3)=CC=C21 WPTCSQBWLUUYDV-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 206010041349 Somnolence Diseases 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229940077239 chlorous acid Drugs 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- IYRGXJIJGHOCFS-UHFFFAOYSA-N neocuproine Chemical compound C1=C(C)N=C2C3=NC(C)=CC=C3C=CC2=C1 IYRGXJIJGHOCFS-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、七ツミック基板表面に配線するセラミック配
線板の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a ceramic wiring board for wiring on the surface of a seven-dimensional substrate.
セラミック基板を配線化する従来技術には、薄膜法°、
厚膜法、直接結谷法などがある。Conventional techniques for wiring ceramic substrates include thin film methods,
There are thick film method, direct knot method, etc.
薄膜法はセラミック基板に金属を蒸着した後、工、fン
グで配線化するものである。この方式には次のような欠
点があった。In the thin film method, metal is vapor-deposited on a ceramic substrate and then wired by etching. This method had the following drawbacks.
(1)量産性が悪い; (1) セラミックと蒸着金属の接合強度が低い。(1) Poor mass production; (1) The bonding strength between the ceramic and the vapor-deposited metal is low.
したがって、コストと性能の両面から、基板がえりサイ
ズの半導体への適用に限られ、センチサイズのセラミッ
ク基板への適用はなかった。Therefore, in terms of both cost and performance, the application has been limited to semiconductors with collar-sized substrates, and has not been applied to centimeter-sized ceramic substrates.
厚膜法は貴金属の粒子からなるペーストを印刷、焼成に
よってセラミック基板を配線化するものである。この方
法KK次の欠点があった。The thick film method is a method of wiring a ceramic substrate by printing and firing a paste made of noble metal particles. This method had the following drawbacks.
0 印刷法で配線化するので、導体幅として1507a
n以上となp、細密化ができない;OV) 導体厚さ
が薄く、導体としての電気伝導性に省シ、高電流の適用
がでよない;
M 導体が銀、パラジウムなどの貴金属で形成される
のでコストが高い。0 Since wiring is done by printing method, the conductor width is 1507a.
If the conductor is n or more, it cannot be made fine; OV) The conductor is thin, resulting in poor electrical conductivity as a conductor, and high current cannot be applied; M The conductor is made of noble metals such as silver or palladium. Therefore, the cost is high.
直接結合法は特1d52−57914号会報に示されて
°いるよ冗、セラミック基iに、表面を酸化鋼とした金
属鋼を配置し、酸素を含む不活するものである。この方
法は、セラミ、りと銅量に大きな接合強度が得られる長
所があるが、次の欠点があった。The direct bonding method, as shown in the special bulletin No. 1d52-57914, is a method in which metallic steel with an oxidized steel surface is placed on a ceramic substrate, and the surface is inert and contains oxygen. Although this method has the advantage of providing a large bonding strength due to the amount of ceramic, porcelain, and copper, it has the following drawbacks.
(VO第1図に示すように、セラミ、り11上に、ハツ
チ部分12の金属鋼を導体パターンとするにはご導体パ
ターン状に打ち抜い友金属鋼をセラミ、り上に配置する
必要が81シ、細密化ができなかった。さらに、パター
ンに囲まれた、独立した状態のパターンを形成できなか
った。(As shown in Figure 1 of VO, in order to use the metal steel of the hatch part 12 as a conductor pattern on the ceramic plate 11, it is necessary to punch out the metal steel in the shape of a conductor pattern and place it on the ceramic plate. , it was not possible to refine the pattern.Furthermore, it was not possible to form an independent pattern surrounded by patterns.
(vl) セラミ、り上に配置した金属鋼の全宍面が
セラミ、りと接合するものではなく、非接合部を生じて
金属鋼の1ふくれ“を生じるので、歩留シの低いもので
めった。(vl) The entire surface of the metal steel placed on the ceramic plate is not bonded to the ceramic plate, but a non-bonded area is created, resulting in a bulge in the metal steel, so the yield rate is low. Rarely.
従来技術に共通する欠点として、セツミック基板の平面
、側面を同等に三次元的に配線化できなかった。A common drawback of the prior art is that it is not possible to equally form three-dimensional wiring on the plane and side surfaces of a static substrate.
本発明の目的は、上記した従”来技術の欠点をなくシ、
量産性良く、歩留夛高く、接合強度大に、電気伝導性曳
く、かつ細密な/(ターンの形成、セツミック基板の平
面と側面を同時に配線化できる、セラミック基板へ配線
するセラミック配線板の製造方法を提供するにある。The purpose of the present invention is to eliminate the above-mentioned drawbacks of the prior art.
Manufacture of ceramic wiring boards that can be wired to ceramic substrates with good mass production, high yield, high bonding strength, electrical conductivity, fine turn formation, and simultaneous wiring on the flat and side surfaces of ceramic substrates. We are here to provide you with a method.
本発明のセラミック配線板の製造方法は、セラミ、り基
板表面に鋼と全率固溶体を形成する貴金属よりなる第1
層を設け、さらに、その上に酸化第1鋼、酸化第2鋼を
主成分とする化学酸化鋼めっきよプなる第2層を設゛け
て基体となし、該基体を酸素を含む不活性気体中で50
0〜1085℃の温度に加熱して該第2層を導電性金属
鋼としてセラミックー銅基板となし;該セラえツク−鋼
基板の必要としない部分をレジストで選択的に覆い;該
選択的にレジストで覆ったセラミ−、クー鋼基板につき
必要とする部分を選択的にめっきし;レジストを除去し
、該レジスト下にあった部分は除去されるが、レジスト
に覆われていなかつため−)#され九°部分は除去され
ない程度に工、チングすることよりなるものである。上
記において、第1層を、2価ノζラジク−、ムと塩酸を
必須成分としてなる処理液に浸漬すること釦よって形成
される金属パラジウムよ)なる4のとすることは好まし
い・ことであシ、マた前記の第2層を、2価−イオン、
2側端イオンの錯化剤としての酒石酸ま九は酒石酸の′
アルカリ金属塩、2側端イオンの還元剤としてのホルム
アルデヒド、1画調イオンと正四面体錯体を形成する錯
化剤を必須成分として含んでなる化学酸化銅め5#液に
浸漬することに二って化学酸化鋼めっきを形成されるも
のとすることは好ましいことである。このような*ニ明
のセラtyり配線板の製造方法によれば、量産性良く、
歩留り高く、接合強度を大に、暉気伝導性良く、かつ細
密なパターンの形成を可能とし、セラミ ・、り基板の
平面と側Itを同時に配線化でよる。The method for manufacturing a ceramic wiring board of the present invention includes a first ceramic wiring board made of a noble metal that forms a solid solution with steel on the surface of a ceramic substrate.
A second layer of chemically oxidized steel plating containing oxidized No. 1 steel and oxidized No. 2 steel as main components is provided on top of the second layer to form a base, and the base is made of an inert material containing oxygen. 50 in gas
Heat the second layer to a temperature of 0 to 1085°C to form a ceramic copper substrate using conductive metal steel; selectively cover unnecessary portions of the ceramic steel substrate with a resist; Selectively plate the required parts of a ceramic or steel substrate covered with a resist; remove the resist, and the parts that were under the resist are removed, but because they are not covered with the resist -) The 9° part must be machined and chipped to the extent that it will not be removed. In the above, it is preferable that the first layer is made of metallic palladium, which is formed by immersing the first layer in a treatment solution consisting of divalent ζ radical, hydrogen, and hydrochloric acid as essential components. The above-mentioned second layer is made of divalent ions,
Tartaric acid as a complexing agent for the 2-terminal ion is tartaric acid'
The two were immersed in a 5# chemical copper oxide solution containing as essential components an alkali metal salt, formaldehyde as a reducing agent for the 2-side end ion, and a complexing agent that forms a regular tetrahedral complex with the 1-gradation ion. It is preferable that chemical oxidation steel plating be formed. According to *Nimei's manufacturing method of ceramic wiring board, mass production is possible,
It has a high yield, high bonding strength, good thermal conductivity, and enables the formation of fine patterns, and enables simultaneous wiring on the plane and sides of the ceramic substrate.
本発明を第2図の五〜−の図解縦断面図を参照してさら
に具体的に説明すれば次の通りである。The present invention will be described in more detail with reference to the illustrated vertical cross-sectional views 5 to 5 in FIG. 2.
二に示すセラミック基板10表WJK:、−に示すよう
釦、銅と全率固溶体を形成する貴金属の第1層2を設け
る。Ceramic substrate 10 shown in Table 2 WJK: As shown in -, a first layer 2 of noble metal forming a solid solution with copper is provided.
その上に、!に示すように、酸化銅1鋼、酸化第2銅を
主成分とする化学酸化銅めっきの第2層3t−設けて基
体とする。in addition,! As shown in FIG. 1, a second layer 3t of chemical copper oxide plating containing copper oxide 1 steel and cupric oxide as a main component is provided to form a base.
前記の基体を酸素を含む不活性気体中で加熱し、立に示
すように、前記の第2層を電気伝導性金属鋼51 K加
熱還元するとともへセラミックと金属鋼31を強固に接
合してセラミックー鋼基板とする。このセラミックー鋼
基板は、不活性気体中で加熱されると、まず鋼と全率固
溶体を形成する貴金属の第1層が鋼中に拡散し、実質上
、セラミックと第2′層の酸化鋼が接することになシ、
酸化鋼が金属鋼へと加熱還元されるとともに、酸化−か
関係するセツミックとの共有納金によって強固くセラミ
ック全真面と金属鋼が接合するものである。The above-mentioned substrate is heated in an inert gas containing oxygen, and the second layer is reduced by heating to electrically conductive metal steel 51K, and the ceramic and metal steel 31 are firmly bonded to each other, as shown in the figure. Ceramic steel substrate. When this ceramic steel substrate is heated in an inert gas, the first layer of noble metal, which forms a complete solid solution with the steel, diffuses into the steel, and the ceramic and the second layer of oxidized steel are substantially dissolved. I don't want to come into contact with you,
The oxidized steel is heated and reduced to metallic steel, and the ceramic surface and metallic steel are strongly bonded together by oxidation and related ceramics.
このようにして得られたセラミ、クー鋼基板(銅の厚さ
:数PIII)を出発材として、以下のごとく、ユーザ
ーの冨む用途に加工できる。Using the thus obtained ceramic and copper substrates (thickness of copper: several PIII) as starting materials, they can be processed into various applications desired by the user, as described below.
まず、二に示すように、導体パターンとしなレジスト4
を選択的に覆う方法としては、例えば、フ、ノーI系樹
脂あるいはロジン客性マレイン酸系樹脂にフィラーおよ
び溶剤などを加えて印刷可能としたペーストを非導体パ
ターン状に印刷、硬化し友ものが使用できる。あるいは
、露光によりて硬化ま念は一硫化するフォトレジストを
用いてもよい。どのような方法を用いるかは、どの程度
の細密導体パターンを必要とするかによる。。前者は安
価であるが、導体パターンとして150μm以上であル
、後者は高価であるが150μm以下の導体パターンを
形成できる。すなわち、レジスト材料の必須特性は後述
するめつき工程に耐える材料であればよい。First, as shown in Figure 2, use a conductor pattern and a thin resist 4.
As a method for selectively covering the material, for example, a printable paste made by adding a filler and a solvent to a non-conducting resin or a rosin-conducting maleic acid resin is printed in a non-conductive pattern and cured. can be used. Alternatively, a photoresist that is hardened by exposure to light may be used. The method to be used depends on how dense a conductor pattern is required. . The former is inexpensive but can form a conductor pattern of 150 μm or more, while the latter is expensive but can form a conductor pattern of 150 μm or less. In other words, the essential characteristics of the resist material are as long as it can withstand the plating process described below.
次に、iK示すようにルジストで覆われていない導体パ
ターンKl気を通じて眠気めりき5を行い、導体パター
ンのみを厚くするとともに、導体パターンを、よ)良い
電気伝導体となす。このめっ#5は、一般には電気銅め
っきが曳い、しかし、半田、二、ゲル、金、銀などのめ
−)きを行ってもよい、ユーザーが争要とする特性を満
足するならば、コストの問題である。Next, as shown in FIG. 5, drowsiness cutting 5 is performed through the conductor pattern K1 which is not covered with the lurgist to thicken only the conductor pattern and make the conductor pattern a good electrical conductor. This plating #5 is generally electrolytic copper plating, but solder, secondary, gel, gold, silver, etc. plating may also be used, if the characteristics desired by the user are satisfied. , it is a cost issue.
電気めっきの厚さは導体とする電気伝導性を満足すれば
よい。一般の半導体を搭載するものは数Vムのため、厚
さ10声鵬もあれば十分である。The thickness of the electroplating may satisfy the electrical conductivity required for a conductor. Since the thickness of a device mounted with a general semiconductor is several volts, a thickness of 10 volts is sufficient.
10000 ’Vム級のパワー素子を搭載するものであ
れば、10〜500声鵬の電気め2#をすればよい。If it is equipped with a power element of 10,000'V class, an electric power element of 10 to 500 V can be used.
次に、五に示すように1前記したレジスト4を剥離する
。この場合は、用いたレジストの特性に対して、手段方
法を選べばよい。例えば、印刷されたレジストであれば
高アルカリ水溶液を用いることもできるし、フォトレジ
ストであればイソプロピルアルプールなど有機溶剤が用
いられる。Next, as shown in 5, the resist 4 described above in 1 is peeled off. In this case, the method may be selected depending on the characteristics of the resist used. For example, a highly alkaline aqueous solution can be used for a printed resist, and an organic solvent such as isopropyl alcohol can be used for a photoresist.
次、Vc1ユに示すように、非導体パターン部の除去を
行う、前記のレジスト4下に6.5九非導体パターン部
は、電気めりきされておらず、すなわち数声鵬程度の金
属鋼であるのに対μ導体パターン部は電気めっきされて
、それだ砂よ〕厚くなっている。このような構成になう
て−るセラミックー鋼基板を全面工、テングすれば、薄
い非導体パターン部が優先的にエツチング除去されるこ
とは説明する必要もない。用いるエツチング液は非導体
パターン部を形成する金属鋼(少し酸化鋼を含む)t−
溶解する特性を持っていれば十分で、過酸化水素、塩化
第2鋼、塩化fs2鉄、亜塩素酸、過マンガン酸、クロ
ム酸系エツチング液など、従来技術のエツチング液を用
いることができる。Next, as shown at Vc1, the non-conductor pattern portion is removed.The non-conductor pattern portion 6.59 under the resist 4 is not electrically plated, that is, it is made of metal with a thickness of about 100 ml. However, the anti-μ conductor pattern is electroplated and is thicker than sand. There is no need to explain that if a ceramic steel substrate having such a structure is completely etched and etched, the thin non-conductive pattern portion will be preferentially etched away. The etching solution used is t-
Any conventional etching solution may be used as long as it has the property of dissolving it, such as hydrogen peroxide, ferric chloride, fs2 iron chloride, chlorous acid, permanganic acid, or chromic acid based etching solution.
以下に1本発明を実施例につき、さらに詳細K159明
する。The present invention will be explained in more detail below with reference to embodiments.
実施例1゜
本実施例においては、セラミック基板に、純度96慢の
ムjimoiよシなるものを用い、まず、下記の同のア
ルカリ脱脂処理と(嗜の中和処理の前処理を施した後、
下記の(ハ)、に)−7,−−−(ν)の順序に本発明
になる処理を施し配線化し九〇なお、下記の工@には、
常法とおシ、必要とすれは、水洗、乾燥などの処理がは
いることは言うまでもないことである−0 、
。Example 1 In this example, a ceramic substrate having a purity of 96% was used. First, it was subjected to the same alkaline degreasing treatment as described below and a pretreatment of neutralization treatment. ,
The process according to the present invention is applied to the order of (c), 2)-7, ---(ν) below and wired.
Needless to say, if necessary, treatments such as washing and drying are necessary.
.
(イ) アルカリ脱脂処理
アルカリ脱脂液組吠寡
水酸化ナトリクム ・−LOO/−・全体を
1車とする量
条件870℃、5分間洗浄
(嗜 中和処理(前処理)
中和液組成;
12規定塩酸 ・・・150−水
・・・全体t1jとする量条件!塞
温、1分間洗浄
G/1 めりき核形成処理(第1層形成)めっき核形
成液組成=
米国シシプレー社 力クリスト404
条件:!温、S分間浸漬
に) イヒ学めっき処!!(第2層形成)化学めりき液
組成冨
0uSOn ・5HtO=501
0ツシエル塩 ・−1501MaOH・
−1>1! t−<40とする量57%−ホルマリン
・−10d−5@I−ジピリジル
・・・100雫水
・・・全体を11とする量条件:40℃、1.5
h(5声賜)
(ホ)加熱処理
20ppmの酸素を含む窒素中、
800℃、30分の後% 1050”、2CI分(へ)
レジストの形成処理
レジスト組成:
東京応化社 0MR83
条件2
上記の工程(ホ)を完了後の基板を脱脂、酸洗後、レジ
ストインクを塗布(3μ履)、露光:2分
()) 1気めっき処理
電気めっき液組成:
ビロリン酸鋼 ・−901ビロリン酸
カリ ・・・350/光沢剤
・−5wJポリリン駿 ・
・・pHをa6とする量水
・・・全体を11とする量条件! 5 AIIp /
si/ 、 50分()9烏)(至) レジスジの剥離
処理
レジスジの剥離剤組成:
東京応化社 スシリタA−502
条件!90℃、2分
(!J) 工、fング処還
エツチング処理液組成:
jJE化112鉄−4ap
12規定塩酸 ・−50d水
−・全体を11とする量条件!50
”、1分
上記の工程によって、導体のパターン幅として50声易
以上細密パターンを形成できた。ノ曵ターンには、銅の
1ふくれ1もなく、十分の接合強度< 500 m )
がアリ、従来技術では不可能でめり九高い接合強度の細
密パターンを形成できた。なお、上起工鴇中、(ハ)工
程におけるめ9#−核形成液は、PL −8n −Oj
l系の水溶液で一1液中、金属パラジウムがコロイドと
して分散してお9、セラミック基板を浸漬すると、セラ
ミック基板!RWJ#/clk着して第1層を形成する
ものである。(B) Alkaline degreasing treatment Alkaline degreasing liquid composition Sodium hydroxide ・-LOO/-・Amount condition: 870°C, 5 minutes cleaning (deposition) Neutralization treatment (pretreatment) Neutralization liquid composition; 12 Normalized hydrochloric acid...150-water
...Amount condition that makes the whole t1j! Incubation, washing for 1 minute G/1 Plating nucleation treatment (first layer formation) Plating nucleation liquid composition = Sisypre Co., Ltd., USA, ChikaraCryst 404 Conditions:! (For warm and S minute immersion) Ihi Gaku plating place! ! (Second layer formation) Chemical plating liquid composition: 0uSOn ・5HtO=501 0 Tsusiel salt ・-1501MaOH・
-1>1! 57% formalin for t-<40
・-10d-5@I-dipyridyl ...100 drops of water
...Quantity conditions where the whole is 11: 40℃, 1.5
h (5 voices) (e) Heat treatment in nitrogen containing 20 ppm oxygen at 800°C, after 30 minutes % 1050", 2CI min (f)
Resist formation process Resist composition: Tokyo Ohkasha 0MR83 Condition 2 After completing the above step (E), the substrate is degreased and pickled, then resist ink is applied (3μ), exposure: 2 minutes ()) 1-step plating Treatment electroplating solution composition: Birophosphate steel -901 Potassium birophosphate ...350/Brightener
・-5wJ Polyrin Shun ・
・・Quantity of water to adjust the pH to a6
...quantity condition that makes the whole 11! 5 AIIp /
si/, 50 minutes ()9) (to) Registration stripping treatment Registration stripping agent composition: Tokyo Ohkasha Susilita A-502 Conditions! 90°C, 2 minutes (!J) Processing and processing Etching treatment solution composition: jJE 112 iron-4ap 12N hydrochloric acid -50d water
-・Quantity condition that makes the whole 11! 50
'', 1 minute By the above process, we were able to form a fine pattern with a conductor pattern width of more than 50 mm.There was no copper bulge in the turn, and sufficient bonding strength < 500 m)
However, we were able to form a fine pattern with extremely high bonding strength that was impossible with conventional technology. In addition, the 9#-nucleation solution in the (c) step is PL-8n-Oj
Metallic palladium is dispersed as a colloid in a l-based aqueous solution9, and when a ceramic substrate is immersed, it becomes a ceramic substrate! The first layer is formed by depositing RWJ#/clk.
なお、本実施例におけるに)工程の化学め−)#析出物
は% xlli回析によシ、酸化第1銅、酸化第2鋼を
主成分とするものであることが確認された。In this example, it was confirmed by xlli diffraction that the chemical precipitates in step (i)) were mainly composed of cuprous oxide and secondary oxidized steel.
実施例λ
化学めっき処理を下記のように行った以外は、実施例1
.0場合と全く同一の処理工程によつ念。Example λ Example 1 except that the chemical plating treatment was performed as follows.
.. Make sure that the processing process is exactly the same as in case 0.
に) 化学めりき砥1!(第2層形成)化学めっき液組
成:
0uBOa ・5H!O・”50P
口、Vエル塩 ・・・1501Naoa
”・餌を1′!h、Oとする量
37 % −ホA’”Yすy
−”1(JdO−フェナンFロリン
・・・30ヤ粂件: 40m+ 、 1.5h(5%
” )本実施例における工程に)による化学めっきは、
実施例1.の場合と同様、めっき析出物は、X線回折に
よシ、酸化第1銅、酸化第2銅を主成分とするもので、
黒色皮膜であった。ni) Chemical grinding wheel 1! (Second layer formation) Chemical plating solution composition: 0uBOa ・5H! O・"50P mouth, Vel salt...1501Naoa
"・Amount of bait 1'!h, O 37% -HoA'"Ysy
-”1 (JdO-Phenane F Lorin
...30 meters: 40m+, 1.5h (5%
”) Chemical plating according to the process in this example)
Example 1. As in the case of , the plating precipitates are mainly composed of cuprous oxide and cupric oxide according to X-ray diffraction.
It was a black film.
本II施例においても、実施例1.0場合と同様に1接
合強度高く、細密パターンを形成で#友。In Example II, as in Example 1.0, the bonding strength was high and a fine pattern was formed.
なお、Ou+の正四面体錯体を形成する錯化剤として、
上記に記載したー、−′−ジピリジル、0−フ、ナンド
ロリン以外のクプロイン、ネオクプロイン、パックプロ
インなど、含窒素複素還式化合物を用い九ところ、いず
れも、上記と全く同様の結果を示し比。In addition, as a complexing agent to form a regular tetrahedral complex of Ou+,
Nine nitrogen-containing heterocyclic compounds such as cuproine, neocuproine, and pacproine other than -, -'-dipyridyl, 0-ph, and nandroline described above were used, and the results were exactly the same as those described above. .
実施側御
セラミ、り基板として、タングステン導体が配線された
湿式セラミック基板(グリーンシート)を用いた。A wet ceramic substrate (green sheet) on which tungsten conductors were wired was used as the ceramic substrate for the implementation side.
実施例1.と同様の工程によって、100声鵬の細密導
体パターンを形成でき、セラミ、り嵌面のタングステン
導体と接続した回路の接合強度の高い、細密パターンを
形成で#九。Example 1. By using the same process as above, it is possible to form a fine conductor pattern of 100 wires, and it is possible to form a fine pattern with high bonding strength for the circuit connected to the tungsten conductor on the ceramic and fitting surface.
実施例4゜
実施例1.における、(ハ)のめ5#核形成処環工at
下記のものとしt以外は、すべて実施例1゜0とお9と
した。Example 4゜Example 1. (c) Nome 5# nucleation process ring engineering at
All of the following except t were set as Example 1°0 and 9.
め5#核形成液組成:
ム犠OAs ・−自111Pエ
タノール ・−全体t−200dとする量条件
8Wi温3分浸漬後、乾燥
上記のような組成のめうき核形成液を用いても、実施例
1.と同様の結果を得た。5# Nucleation liquid composition: Mu sacrificial OAs ・-111P ethanol ・-Total amount to be t-200d Condition 8Wi temperature After soaking for 3 minutes, drying Even if a nucleation liquid with the above composition is used, Example 1. obtained similar results.
さらに、種々検討の結果、鋼と全率固溶体を形成するP
(L 、 Au 、 Ptなどが本発明のめりき核形成
に有効であることが判り九。Furthermore, as a result of various studies, we found that P, which forms a total solid solution with steel,
(It has been found that L, Au, Pt, etc. are effective for forming plated nuclei in the present invention.
以上本発明を具体的に説明したが、適用するセラt、り
基板としては、Aj*Oiを主成分とするものであれば
良い。Although the present invention has been described in detail above, the ceramic substrate to which it is applied may be one containing Aj*Oi as a main component.
以上のように、本発明によれば、従来技術では不可能で
あった、セラミ、り基板への平面と側面の三次元的配線
を、導体が1ふくれすることがないので、量産性良く、
歩留シ高<、眠気伝導性の曳い細密な導体パターンとし
て形成でよるものなのである。As described above, according to the present invention, three-dimensional wiring on the plane and side surfaces of a ceramic substrate, which was impossible with the conventional technology, can be easily mass-produced because the conductor does not bulge.
The high yield rate is due to the formation of a fine conductive pattern with drowsy conductivity.
第1図は、従来技術において、セツミック上。
に導体形成のため銅箔を導体の形状に打ち抜1〜。
九構成を示す平面図である。
b
M2図−〜−は、本発明のセラミック基板の。
配線化工St−順次的に示す図解縦断面図′Cある。
1・−セラミック基板; 2・・・貴金属;3・・・化
学酸化鋼めりき:
3′・・・金属鋼; 4・−レジスト;5・・
・電気めっき。
代塩入弁環士 薄 1)利 aご
オ 1 囚
2
手続補正書(方式)
事件の表示
昭和56 年特許願第 165769号補正をする
者
2、 +(・ ’5101林式会神 日 立 製作
折代 表 名 三 1) 勝 茂代 理
人FIG. 1 shows the conventional technology on the Setumik. To form a conductor, punch the copper foil into the shape of the conductor. FIG. 9 is a plan view showing nine configurations. b M2 figures - to - are of the ceramic substrate of the present invention. Wiring process St-Illustrated vertical cross-sectional views 'C' shown sequentially. 1.-Ceramic substrate; 2.-Precious metal; 3.-Chemical oxidation steel plating: 3'...Metal steel; 4.-Resist;5.
・Electroplating. Daishioiri Benkanshi Susuki 1) Ri Agoo 1 Prisoner 2 Procedural amendment (method) Indication of case 1982 Patent Application No. 165769 Amendment person 2, +(・'5101 Hayashi Shikiikagami Hitachi production Representative Name: 3 1) Masato Katsu Shigeyo
Claims (1)
る貴金属よりなる第1層を゛設け、さらにその上に酸化
#11鋼、酸化第2鋼を主成分として含む化学酸化鋼め
っきよルなる第2′層を設けて基体と迦し、該基体を酸
素を含む不活性気体中、5oot〜1085”の温度に
加熱して該#I2層を導電性金属鋼としてセラミックー
銅基板とする第1工程、該セラミックー銅基板の必要と
しない部分を選択的にし゛シストで覆うjlI2工程、
該選、択−ICレジストで覆ったセラ1.クー鋼基板を
、必要とする部分のみ選、択的にめっきする第3工程、
該レジス十を除去するlI4工程、該レジスト下に6つ
九部分は除去されるが、lI3工程でめっきされた部分
は除去されることのないようにエツチングする第5工程
、を含んでなること倉特徴とするセラ【、り配線板の製
造方法。 +2) @貴金属よりなる第1層は、2価パラジク。 ムと塩酸を必須成分として含んでなる処理液に浸漬する
ことkよって1成される金属パラジウムよりなるもので
ある特許請求の範囲第1項C載のセラミック配線板の製
造方法。 (3) 腋化学酸化鋼めっきよシなる骸第2層は、2
画調イオン、2画調イオンの錯化剤としての酒石酸また
は酒石酸のアルカリ金属塩、2画調イオンの還元剤とし
てのホルムアルデヒド、1側端イオンと正四面体錯体を
形成する錯化剤を必須成分として含んでなる化学酸化鋼
め−)き液に浸漬することによって化学酸化鋼めっきを
形成されるものである特許請求の範囲第1項または第2
項記載のセラミ、り配線板の製造方法。[Scope of Claims] (1) A first layer consisting of a noble metal forming a solid solution with steel is provided on the surface of a ceramic substrate, and furthermore, oxidized #11 steel and oxidized #2 steel are provided as main components. A second layer of chemically oxidized steel plating containing the metal is applied to the substrate, and the substrate is heated to a temperature of 50 to 1085'' in an inert gas containing oxygen to coat the second layer of conductive metal steel. a first step of forming a ceramic-copper substrate as a ceramic-copper substrate; a second step of selectively covering unnecessary portions of the ceramic-copper substrate with a cyst;
The selection, selection-Cera covered with IC resist 1. A third step of selectively plating only the necessary parts of the Ku steel substrate;
1I4 step of removing the resist; and a 5th step of etching so that the portions under the resist are removed but the portions plated in II3 are not removed. Kura's characteristic feature is the production method for wiring boards. +2) @The first layer made of precious metal is divalent palladium. 2. The method for manufacturing a ceramic wiring board according to claim 1C, wherein the ceramic wiring board is made of metallic palladium which is formed by immersing the ceramic wiring board in a treatment solution containing silica and hydrochloric acid as essential components. (3) The second layer of armpit chemical oxidized steel plating is 2
Tartaric acid or an alkali metal salt of tartaric acid as a complexing agent for the two-tone ion and two-tone ion, formaldehyde as a reducing agent for the two-tone ion, and a complexing agent that forms a regular tetrahedral complex with the one-side end ion are required. A chemical oxidized steel plating is formed by immersing the steel in a chemical oxidized steel plating solution containing the chemical oxidized steel plating as a component.
A method for manufacturing a ceramic wiring board as described in Section 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16576981A JPS5867095A (en) | 1981-10-19 | 1981-10-19 | Method of producing ceramic circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16576981A JPS5867095A (en) | 1981-10-19 | 1981-10-19 | Method of producing ceramic circuit board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5867095A true JPS5867095A (en) | 1983-04-21 |
Family
ID=15818681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16576981A Pending JPS5867095A (en) | 1981-10-19 | 1981-10-19 | Method of producing ceramic circuit board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5867095A (en) |
-
1981
- 1981-10-19 JP JP16576981A patent/JPS5867095A/en active Pending
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