JPS5866325A - Susceptor for epitaxial growth - Google Patents

Abstract

PURPOSE:To contrive an increase in treatment amount by a method wherein a susceptor is held at the opposite sides of a strut perpendicular to the base of a core tube and wafers are supported with a tilt angle of 5 deg. degrees or less. CONSTITUTION:A susceptor 1 has SiC coated on the surface of a C substrate and is held perpendicular to the base by a holder 2 and Si wafers 3 are mounted on the irregular sections 4 on the surfaces of the opposite sides of the susceptor 1. This assembled body is inserted in a core tube 5 and epitaxially grown by induction heating 6. At that time, the inclination theta of the wafers 3 is held within 5 deg. to perpendicular. If the angle exceeds 5 deg., the flow of Si-family vapor causes significance to the diameter direction of the core tube to have an influence upon an epitaxial growth layer. This constitution increases more treatment capability as compared with conventional horizontal-type device and furthermore can form an epitaxial layer which is entrirely equal to the conventional one.

Description

[Detailed description of the invention] Misfire F! iiH This relates to a susceptor used in the epitaxial growth of silicon used as a semiconductor.0 The susceptor used is one in which 1At silicon carbide is deposited on the surface of a carbon base material, and there are barrel types, disk types, etc. , classified as horizontal type o
The barrel type is a truncated polygonal pyramid made by combining flat plates, and the iBK wafer is placed on each flat plate with irregularities on the outer surface.
The disk type is a type in which the que/%- is placed on the upward uneven part of the disc, and the horizontal type is the one in which the que/%- is placed on the uneven part on the upper surface of the flat plate.
A susceptor is mounted on the wafer, which is heated by lamp heating or induction heating, and silicon JI gold is generated on the surface of the wafer by the silane vapor in the system.

In this case, a long-standing challenge has been how to overcome problems such as temperature unevenness and uneven gas flow and achieve uniform silicon epitaxial growth. Furthermore, the barrel type and horizontal type had a small capacity, and there was a need for improved manufacturing capacity.

However, even if the mt of the disk type and horizontal type was increased, there was uneven heating, and the unevenness of the gas flow was also large when the temperature was increased, and the processing of several wafers at 11 degrees was the limit. .

Misfire @ is in the ho1J sintal type ゛, its contemplation [
It is related to a susceptor that suppresses uneven heating and uneven gas flow that occur when using a large number of wafers, and can generate homogeneous epitaxial layers. -The scepter is almost against the bottom of the furnace core tube! i
The inclination angle of the wafer in the concavo-convex section of the susceptor is within 5'' with respect to the vertical.

That is, in the conventional horizontal type, as mentioned above, a flat plate is placed horizontally on the bottom 11 of the furnace core tube, a wafer is placed in the uneven portion of the surface of this horizontal plate, and the wafer is heated while being supplied with silicon vapor. be. Therefore, in order to increase the throughput, K must be a long processing furnace, or a multi-stage or other method must be adopted.

However, a long one requires a larger soaking zone, and a simple multi-stage one makes the gas flow non-uniform, making it difficult to obtain homogeneous epitaxial growth. For this reason, the inventors of the present invention have studied the gas flow, the orientation of the wafer, and other factors, and have found that if the orientation of the susceptor is as close to vertical as possible, relatively uniform epitaxial growth can be achieved. As a result, it was possible to process the susceptors placed on the Uni-No-1 side by side on both the left and right sides. 0 votes 1 to explain In the figure, 1 is a susceptor formed by coating silicon carbide on the surface of a carbon base material, and the susceptor 1 is held at both ends by a susceptor holder 2, and a silicon wafer is attached to the susceptor 03.
It is placed on the irregularities s4 circles provided on both sides of the surface.

This structure is inserted into a furnace core tube 5, and the susceptor 1 is heated by an induction heating device 6 to cause epitaxial growth. At this time, the inclination θ of the silicon wafer 3 is within 5@, preferably 11 ~2''. When this inclination is 5'' or more, there will be a significant difference in the flow of the cylindrical steam in the radial direction of the furnace core tube 5, which will affect the thickness of the epitaxially formed layer.

In this case, giving an inclination of 56 or more has the disadvantage that uniform heating becomes difficult because the depth of the uneven portion 4 of the susceptor 1 to be placed differs in the thickness of the susceptor itself. will occur.

Figures 1 and 2 show two susceptors 1 held together by a support 2, with 3 tons of wafers on both sides.
- It has a protrusion 114 for placing the wafer 3. In this case as well, the inclination of the wafer 3 with respect to the vertical must be within 5''.

In the case of Fig. 2 of Jin, since the susceptor itself is tilted, the depth of the uneven portion on its surface can be set to the same depth as the susceptor itself.Therefore, there is also the effect that temperature unevenness can be easily adjusted during heating. have

Since the present invention is constructed as described above, the processing capacity can be significantly increased compared to the conventional horizontal type, and the results are comparable to those of the conventional method. It is possible to form epitaxial lengths that do not differ -0

[Brief explanation of the drawing]

Figure 1 is a cross-sectional view of the susceptor of the present invention, with a Ni-No- mounted and held inside the furnace core tube, and Figure 2 is a cross-sectional view of another embodiment of the susceptor. It is a diagram. 1... Susceptor 2... Holder 3... Silicon wafer 4... Uneven portion 5... Furnace core tube 6... Induction heating device inventor Hoshina bladder inventor Taku Yamazaki Applicant Toshiba Ceramic , Tsukusu Shutdown Company Procedures Amendment (Voluntary) April 9, 19957 Haruki Shimada, Commissioner of the Japan Patent Office, Indication of Case 1982 Patent Original No. 164612 2 Name of Invention Susceptor for Epitaxial Growth 36 Make amendments Patent applicant address: 1-26-2 Nishi-Shinjuku, Shinjuku-ku, Tokyo Name: Toshiba Ceramics Co., Ltd. 4 Agent:
103 6. The number of inventions increased by the amendment 141 The scope of the claims is amended in Appendix 9. 2. In the specification side, line 2112, line 0, the phrase ``simply disk type'' is corrected to ``simply barrel type.''0 3. Lines 16 and 17 of line 211 of the specification are deleted. Add the following sentence. "The present invention is designed to prevent uneven heating and gas problems that occur when processing a large number of wafers." 4. Meiyeonsho 1i112 - Line 19 and 2 (Delete "on both sides" in the 1st line. 5. In the second line of the specification IE3ml, "by...
” is corrected to “Both sides K of”. 6. Delete the 4th line of the 3rd paragraph of the specification and add ``It can also be called a pillar type.'' 7. In the 5th line of Part 3 of the specification, delete “that is” and replace it with “
For example, add ". & Specification Tube 4 ``$11 In the first line, ``The tar is on both the left and right sides'' is corrected to ``The tar is on both the left and right sides of the support.''" is divided by PA 0. 10. In the 5th-3rd line of the specification, the phrase ``Fig. 2 is'' is corrected to read ``Fig. 12. In the 2nd line of No. 6W of the specification, the phrase ``Fig. 2 shows other embodiments of the susceptor'' has been replaced with [2nd Fig. 3]. 13. In the sixth line of specification No. 611, the claim characterized by "induction" The susceptor is mounted on both sides of the support substantially perpendicular to the bottom surface of the furnace core tube. A susceptor for epitaxial growth, characterized in that the angle of inclination of the wafer in the uneven portion of the susceptor is within 5° with respect to the total vertical.

Claims (1)

[Claims] Que bar on both sides almost against the bottom of the furnace core tube! ii) A susceptor for epitaxial growth, characterized in that the susceptor is held by supports, and the inclination angle of the wafer in the uneven portion of the susceptor is within 5@ with respect to the vertical.