JPS5861684A - Light emitting semiconductor device - Google Patents
Light emitting semiconductor deviceInfo
- Publication number
- JPS5861684A JPS5861684A JP56160592A JP16059281A JPS5861684A JP S5861684 A JPS5861684 A JP S5861684A JP 56160592 A JP56160592 A JP 56160592A JP 16059281 A JP16059281 A JP 16059281A JP S5861684 A JPS5861684 A JP S5861684A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- epitaxial layer
- gap
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract 3
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910002058 ternary alloy Inorganic materials 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 3
- 239000002019 doping agent Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001325 element alloy Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000155 melt Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 241001272720 Medialuna californiensis Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 101150092200 alx-1 gene Proteins 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は窒素をドープした燐化ガリウムアルミニラ・ム
（ＧＥＬ 、−Ｘ Ａｌｘｐ） ３元混晶の半導体発光
装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light emitting device using nitrogen-doped gallium aluminum phosphide (GEL, -X Alxp) ternary mixed crystal.
窒素をドープした燐化ガリウム（Ｇａｐ）発光ダイオー
ドは、緑色発光ダイオードとして現在各方面で広く使用
されている。この発光ダイオードの発光効率の増大には
、発光中心となる窒素の濃度の増加が不可欠であるが、
他方ではこの窒素濃度の増加は発光ピーク波長の長波長
側への移動をまねく。例えば、窒素をドープしないＧａ
Ｐ発光ダイオードは発光ピーク波長が６５５０ムと純緑
色に近くなるが発光効率は０．０１％と低く、逆に窒素
を約１ｏ ｃＩｎドープしたＧａｐミル発光ダイオード
発光効率は０．１〜０．２％と高いが、その発光ピーク
波長は５６７ｏムとなシ発光ダイオードの色調は緑より
も黄に近いものとなる。このことは、緑色発光ダイオー
ドとして要求される波長領域６６００五以下をはずれる
ことを意味し、特性上不都合なものとなる。Nitrogen-doped gallium phosphide (Gap) light emitting diodes are currently widely used as green light emitting diodes in various fields. In order to increase the luminous efficiency of this light emitting diode, it is essential to increase the concentration of nitrogen, which is the luminescent center.
On the other hand, this increase in nitrogen concentration causes the emission peak wavelength to shift toward longer wavelengths. For example, Ga without nitrogen doping
P light-emitting diodes have a peak emission wavelength of 6550 μm, which is close to pure green, but their luminous efficiency is as low as 0.01%, whereas Gap-mil light-emitting diodes doped with about 10 cIn of nitrogen have a luminous efficiency of 0.1 to 0.2. %, but its emission peak wavelength is 567 ohm, and the color tone of the light emitting diode is closer to yellow than green. This means that the wavelength range of 6,600 or less required for a green light emitting diode is outside the range, which is disadvantageous in terms of characteristics.
このように、従来のＧａｐミル発光ダイオード光中心の
窒素濃度の増加とともに発光効率は向上するが、他方で
は発光ダイオードの重要な特性の一つである色調を悪化
させるという問題点を有している。As described above, as the nitrogen concentration in the light center of the conventional Gap mill light-emitting diode increases, the luminous efficiency improves, but on the other hand, it has the problem of deteriorating the color tone, which is one of the important characteristics of light-emitting diodes. .
本発明はこの問題点の解決を計るものであり、本発明の
発光ダイオードは、燐化ガリウムアルミニウム（Ｇａ＋
−Ｘｈｌｘｐ：Ｏ＜Ｘ＜１）３元■−■族混晶を材料と
しこれに発光中心として窒素をドープした発光ダイオー
ドである。すなわち、本発明は燐化アルミニウム（ムｌ
ｐ）が２・４５ （ｅＶ）と燐化ガリウム（Ｇａｐ）の
２．２６ （ｅＶ）よりも大きいエネルギーギャップＥ
ｇを有することに着目し、Ｇａｐに組成Ｘのムｌを加え
た３元混晶燐化ガリウムアルミニウム（ＧＩＬ ＋−ｘ
Ａｌ！ｘｐ）を用いることにより、そのエネルギーギ
ャップＥ、９をＧａｐ ヨＩＩ） モ犬きくするととも
に、このＧａ１−エムｅ ’ｘ ｐ Ｋ： 窒素をドー
プし発光中心の濃度を増加させ、発光効率を向上させ、
また、発光ピーク波長の長波長側への移動を上記のエネ
ルギーギャップＲｇの増大によって、前述の緑色発光波
長領域５６００ム以１−′に押えだことを特徴としてい
る。The present invention aims to solve this problem, and the light emitting diode of the present invention is made of gallium aluminum phosphide (Ga+
-Xhlxp: This is a light emitting diode made of a ternary ■-■ group mixed crystal (O<X<1) and doped with nitrogen as a luminescent center. That is, the present invention uses aluminum phosphide (mul
p) is 2.45 (eV), which is larger than the 2.26 (eV) of gallium phosphide (Gap).
Focusing on the fact that it has g, we created ternary mixed crystal gallium aluminum phosphide (GIL +-x
Al! By using xp), the energy gap E, 9 can be increased by increasing the energy gap E, 9, and this Ga1-M e 'x p K: Doping with nitrogen can increase the concentration of luminescent centers and improve luminous efficiency. let me,
Further, the shift of the emission peak wavelength to the long wavelength side is suppressed to 1-' beyond the green emission wavelength range of 5600 μm by increasing the energy gap Rg.
以下、本発明について実施例を参照にして詳細に述べる
。Hereinafter, the present invention will be described in detail with reference to Examples.
第１図はＧａ＋−ｘＡｌｘｐエピタキシャル層をＧａｐ
基板上に形成するための液相エピタキシャル成長装置の
構成を示す図であり、１は基板支持体、２Ｉ−ｉ四基板
支持体の基板支持部内へ収納されたサルファ（Ｓ）ドー
プのｎ型−Ｇａｐ基板、３は溶融液槽４゜５をもち、基
板支持体１上でスライドが可能な溶融液収納装置、そし
て６，７は溶融液でありたとえば、矢印Ｘ方向へ溶融液
収納装置３を移動させ、溶融液６，７を順次接触させる
ことによってエピタキシャル層が形成される。Figure 1 shows the Ga+-xAlxp epitaxial layer.
It is a diagram showing the configuration of a liquid phase epitaxial growth apparatus for forming on a substrate, in which 1 is a substrate support, 2I-i is a sulfur (S)-doped n-type Gap housed in a substrate support part of a four-substrate support. The substrate 3 has a melt tank 4°5 and is a melt storage device that can slide on the substrate support 1, and 6 and 7 are melt liquids, and for example, the melt storage device 3 is moved in the direction of the arrow X. An epitaxial layer is formed by sequentially bringing the melts 6 and 7 into contact with each other.
Ｇａｐ・基板２は７Ｘ１０ ｉｌｍの電子濃度を有す
る。Gap substrate 2 has an electron concentration of 7×10 ilm.
溶融液６は、金属ガリウム（Ｇａ）にこのＧａに対して
３．ｅｓ（ｗｔ、％）のノンドープのＧａｐ多結晶なら
びに０．０５（Ｗｔ、％）のアルミニウム（ムｌ）を加
え、ドーパントとしてテ／ｌ／／ｌ／（Ｔ６）を０．０
０１２６（ｗｔ−％）添加して形成されている。一方、
溶融液７はＧａに２ｓ（ｗｔ、％）の多結晶Ｇａｐなら
びに０・１（ｗｔ％）のアルミニウム（ム７りを添加し
て形成されている。これらの溶融液をその組成が均一に
なるよう所定の温度たとえば１，０２０’Ｃの温度で十
分に加熱したのち、溶融液収納装置３を矢印Ｘの方向へ
スライドさせ、先ず溶融液６をＧａｐ基板２に接触させ
る。次いで、接触状態を均一にするために必要な時間に
わたって溶融液６の温度を上記の温度で保持、したのち
、冷却速度ＣＮｊを１〜２°Ｃ／分に設定して徐冷を行
ないｎ型ＧＩＬ１−ｘｌｘｐエピタキシャル層ｎ１
を形成する。炉の温度が所定の温度、たとえば９９０
’Ｃに到達したところで、溶融液収納装置を再びＸ方向
にスライドさせ、溶融液６をＧａｐ基板２から除去し、
溶融液７をＧａｐ基板２に接触させる。再び所定の時間
、たとえば１０分間この状態を保持した後に冷却速度Ｃ
Ｎ２１〜２°Ｃ／分で徐冷を行いｎ型Ｇａ１ ｚ Ａ
７ｚｐエピタキシャル層ｎ２の成長を開始する。この時
、同時に水素（Ｎ２）をキャリアガスとしてアンモニア
（ＮＨ５）ガスを反応管中に入れ、発光中心のＮを上記
ｎ２領域に導入する。そして炉温度が９４０°Ｃ付近に
達したところで亜鉛（Ｚｎ）を気相より導入し、ｐ型Ｇ
ａ ＋ −Ｘ Ａｌｘ１） エピタキシ＋ ル層ｐ＋の
形成を開始する。炉温度が９００ ’Ｃに到達したとこ
ろでＧａｐ基板２から溶融液７を除去しＰｌの成長を停
止するとともに、ＮＨ５およびＺｎの導入も終了させる
。The melt 6 contains metallic gallium (Ga) with a ratio of 3. Add undoped Gap polycrystal of es (wt, %) and 0.05 (wt, %) aluminum (mul), and add 0.0 te/l//l/(T6) as dopant.
It is formed by adding 0126 (wt-%). on the other hand,
The melt 7 is formed by adding 2s (wt, %) of polycrystalline Gap and 0.1 (wt%) of aluminum (glu) to Ga. After sufficiently heating the melt to a predetermined temperature, for example, 1,020'C, slide the melt storage device 3 in the direction of arrow X to first bring the melt 6 into contact with the Gap substrate 2. After maintaining the temperature of the melt 6 at the above temperature for the time required to make it uniform, slow cooling is performed by setting the cooling rate CNj to 1 to 2 °C/min to form an n-type GIL1-xlxp epitaxial layer. n1
form. When the temperature of the furnace is a predetermined temperature, for example 990
'C, slide the melt storage device in the X direction again to remove the melt 6 from the Gap substrate 2,
The melt 7 is brought into contact with the Gap substrate 2. After holding this state again for a predetermined period of time, for example 10 minutes, the cooling rate C
N-type Ga1 z A was slowly cooled at 21-2°C/min.
Growth of the 7zp epitaxial layer n2 is started. At this time, ammonia (NH5) gas is simultaneously introduced into the reaction tube using hydrogen (N2) as a carrier gas, and N, which is the luminescent center, is introduced into the n2 region. Then, when the furnace temperature reached around 940°C, zinc (Zn) was introduced from the gas phase, and the p-type G
a + -X Alx1) Start forming epitaxial layer p+. When the furnace temperature reaches 900'C, the melt 7 is removed from the Gap substrate 2 to stop the growth of Pl, and the introduction of NH5 and Zn is also terminated.
このような条件の下で形成される各エピタキシャル層は
、ｎ１層で厚み２５μ・平均キャリア濃リア濃度４ Ｘ
１０ ＣＩＬ ９１層で厚み１２μ、半月キャリ
ア＃１１Ｘ１０ ｃｒｒＬである。また、各エピタキ
シャル層のＧａ ｊ −ｘ Ａ７！ＸＩ）の組成は第２
図に示すような傾向を示し、ｐｎ接合界面付近で）（＝
０．１２となり、Ｎ＃に度は１０ ｃｒ／Ｌである。こ
こで、ｎエピタキシャル層としてムｌ仕込み量の異なる
ｎｌ、ｎ２ 層を形成しているのは、Ｇａｐ基板とのエ
ピタキシャル成長を容易にするだめである。Each epitaxial layer formed under these conditions is an n1 layer with a thickness of 25μ and an average carrier concentration of 4X.
10 CIL 91 layers, thickness 12μ, half-moon carrier #11X10 crrL. Moreover, G j −x A7! of each epitaxial layer. The composition of XI) is the second
It shows a tendency as shown in the figure, near the p-n junction interface) (=
0.12, and the degree of N# is 10 cr/L. Here, the reason why the nl and n2 layers having different amounts of mulch are formed as the n epitaxial layer is to facilitate epitaxial growth with the gap substrate.
以上のエピタキシャルウェーハより製作されたＧｌ＋−
ｘＡｌｘｐの発光ダイオードは６５４０〜５６６ｏムの
純緑色の発光ピーク成長を示し、発光効率は０．０６％
とすぐれたものであった。Gl+- manufactured from the above epitaxial wafer
The xAlxp light emitting diode exhibits a pure green emission peak growth of 6540-566 ohm, and the luminous efficiency is 0.06%.
It was excellent.
このように、本発明のＧａ１−ＸＡ１ｘｐ発光ダイオー
ドは従来のＧａｐミル緑色発光ダイオード較して、色調
が改善されるとともに発光効率も高く、工業的価値が犬
なるものである。As described above, the Ga1-XA1xp light emitting diode of the present invention has improved color tone and higher luminous efficiency than the conventional Gap mill green light emitting diode, and has great industrial value.
第１図は本発明の一実施例にかかるＧａ１−ＸＡｊ！ｘ
ｌ）発光ダイオードを製作するために用いる液相エピタ
キシャル成長装置の構造を示す図、第２図は本発明の一
実施例から得られたＧａ ＜ −ｘ Ａｌｘ１）のＡｌ
のエピタキシャル層内の分布を示す。
１・・・・・・基板支持体、２・・・・・・ｎ形Ｇａｐ
基板、ｎｌ。
ｎ２ ・・・・・・ｎ 型Ｇａ １−ｘＡＡ！ＸＰエピ
タキシャル層、ｐｌ・・・・・・ｐｆｆＪＧ４＋−ｘ’
ｌｘｐエピタキシャル層。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図FIG. 1 shows Ga1-XAj! according to an embodiment of the present invention. x
l) A diagram showing the structure of a liquid phase epitaxial growth apparatus used for manufacturing a light emitting diode.
distribution within the epitaxial layer. 1...Substrate support, 2...N-type Gap
Substrate, nl. n2......n-type Ga 1-xAA! XP epitaxial layer, pl...pffJG4+-x'
lxp epitaxial layer. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2
Claims (1)
体層を形成し、前記化合物半導体層でｐｎ接合を構成す
るとともに該ｐｎ接合に窒素をドープしたことを特徴と
する発光半導体装置。1. A light emitting semiconductor device comprising: a gallium aluminum phosphide ternary alloy compound semiconductor layer formed on a substrate; the compound semiconductor layer forming a pn junction; and the pn junction doped with nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56160592A JPS5861684A (en) | 1981-10-07 | 1981-10-07 | Light emitting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56160592A JPS5861684A (en) | 1981-10-07 | 1981-10-07 | Light emitting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5861684A true JPS5861684A (en) | 1983-04-12 |
Family
ID=15718279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56160592A Pending JPS5861684A (en) | 1981-10-07 | 1981-10-07 | Light emitting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5861684A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0617470A2 (en) * | 1993-03-25 | 1994-09-28 | Shin-Etsu Handotai Company Limited | A semiconductor light emitting device and methods of manufacturing it |
-
1981
- 1981-10-07 JP JP56160592A patent/JPS5861684A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0617470A2 (en) * | 1993-03-25 | 1994-09-28 | Shin-Etsu Handotai Company Limited | A semiconductor light emitting device and methods of manufacturing it |
| EP0617470A3 (en) * | 1993-03-25 | 1995-03-01 | Shinetsu Handotai Kk | A semiconductor light emitting device and methods of manufacturing it. |
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