JPS5861666A - Semiconductor device and preparation of the same - Google Patents
Semiconductor device and preparation of the sameInfo
- Publication number
- JPS5861666A JPS5861666A JP16125481A JP16125481A JPS5861666A JP S5861666 A JPS5861666 A JP S5861666A JP 16125481 A JP16125481 A JP 16125481A JP 16125481 A JP16125481 A JP 16125481A JP S5861666 A JPS5861666 A JP S5861666A
- Authority
- JP
- Japan
- Prior art keywords
- purity
- metal
- high melting
- semiconductor device
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 18
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 11
- 230000008020 evaporation Effects 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005477 sputtering target Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000004821 distillation Methods 0.000 claims 1
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 238000004857 zone melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 abstract description 24
- 238000002844 melting Methods 0.000 abstract description 24
- 239000004020 conductor Substances 0.000 abstract description 11
- 239000007789 gas Substances 0.000 abstract description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 229910052776 Thorium Inorganic materials 0.000 abstract description 6
- 229910052770 Uranium Inorganic materials 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003085 diluting agent Substances 0.000 abstract description 2
- 239000012495 reaction gas Substances 0.000 abstract description 2
- 229910015255 MoF6 Inorganic materials 0.000 abstract 1
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 1
- RLCOZMCCEKDUPY-UHFFFAOYSA-H molybdenum hexafluoride Chemical compound F[Mo](F)(F)(F)(F)F RLCOZMCCEKDUPY-UHFFFAOYSA-H 0.000 abstract 1
- 239000000941 radioactive substance Substances 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 description 7
- 238000003860 storage Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241001092070 Eriobotrya Species 0.000 description 1
- 235000009008 Eriobotrya japonica Nutrition 0.000 description 1
- 241000020719 Satsuma Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000015278 beef Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 235000015219 food category Nutrition 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- LNDHQUDDOUZKQV-UHFFFAOYSA-J molybdenum tetrafluoride Chemical compound F[Mo](F)(F)F LNDHQUDDOUZKQV-UHFFFAOYSA-J 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は千尋体ｔｃよ、特にメモリ部を有する半導体集
積回路装置及びその製造方法に関す。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to Chihirotai TC, and particularly to a semiconductor integrated circuit device having a memory section and a manufacturing method thereof.
半導体装置の導体層形成材料として、アルミニタム（Ａ
Ｉ）よｔ）４関急照で６って、製造工程中にセルフアラ
イメント（ｓ＋ｅｌｆ ａｔｔｇｎｔｎ＊ｎｔ）法等を
導入した場合に必要とされる熱処理条件に耐え、かつ多
結晶シリコン（Ｓｔ）ｊジも低い電気抵抗を有するモリ
ブデン（Ｍｏ）等の高融点金属、或いはこれよｐも化学
的に安定でるるモリブデン・シリナイド（ＭｏＳｉｔ）
等の高１点並属化合資が試みられて−る０またこれらの
導体ノーの形成方法としては真空蒸着法、スパッタリン
グ法或いは−Ａ相成長（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ
Ｄｅｐｏｓｉｔｉｏｎ ；−以下ＣＶＬ）と略称する
）法等が知られている。Aluminum (A
I) Yot) 4) 6) Polycrystalline silicon (St) that withstands the heat treatment conditions required when self-alignment (s+elf attgntn*nt) method etc. is introduced during the manufacturing process. A high melting point metal such as molybdenum (Mo), which has low electrical resistance, or molybdenum silinide (MoSit), which is also chemically stable.
Attempts have been made to synthesize high-point parallel materials such as
Deposition (hereinafter abbreviated as CVL) method is known.
半導体基板上に真空蒸着法又はスノ（ツタリング法によ
って高融点金属よシなる導体Ｊｌを形成する場合に、蒸
発源又はスパッタ・ターゲットとされる核高融点金属の
線区は蛾もＮ度の萬いもので９９．９９−であり、これ
らの蒸発源又はスノくツタｅターダットにはトリウム（
Ｔｂ）、ウラン（Ｕ、）が１００ ｐｐｂ程度以上存在
し、又、高融点金、属化合物に関しても、該高融点金属
に対する比率が前記と同程度のＴｈ、 Ｕが存在する。When a conductor made of a high melting point metal is formed on a semiconductor substrate by a vacuum evaporation method or a sputtering method, the line area of the nuclear high melting point metal used as an evaporation source or sputtering target is approximately N. Thorium (99.99-
About 100 ppb or more of Tb) and uranium (U) are present, and as for high melting point metals and metal compounds, Th and U are present in the same proportion as above with respect to the high melting point metal.
かくの如き蒸発源又はスノくツタ・ターゲットを用いて
導体層を形成した半導体装置においては、該導体層に含
まれるＴｈ、 Ｕの放射性〜１磯によムアルファ粒子が
１６’個／ｄ・ｈｏｕｒ程度放出され為このアルファ粒
子がチップ表面を透過する際に記憶ノード付近に多数の
電子−正孔対を生成し、これがメモリ中の蓄積データを
逆転し、シングル・ビット・エラーｔ−発生するＯこの
シングルｅビット・エラーは該半導体装置の記憶領域内
で２ンダ復するものであって、以下ソフト・エラーと呼
ぶ。In a semiconductor device in which a conductive layer is formed using such an evaporation source or a snow ivy target, the radioactivity of Th and U contained in the conductive layer ~16' alpha particles/d・hour When these alpha particles pass through the chip surface, they create a large number of electron-hole pairs near the storage node, which reverses the stored data in the memory and causes a single bit error. This single e-bit error repeats in two orders within the storage area of the semiconductor device, and is hereinafter referred to as a soft error.
前記高融点差属としｔは、第１ＶＡ族、第ＶＡ族。The high melting point difference t is Group 1 VA or Group VA.
第ＶＴＡ族もしくはＳ−涙に勇し、かつ第４周期乃至＄
６周ＪｇＪｖＣ属する金属が対象とされるが、これらの
金属中、例えばタンタル（Ｔａ）、チタン（Ｔｉ）等の
虜化物をＤＲＡ；□／Ｔのコ／ｆンサの誘４体とするこ
とが試みられており、こ０・場合においても該蓋属にｆ
ｔｎるＴｈ、 Ｕは前記ソフト−エラーの要因となる。Group VTA or S--Tearful, and Period 4 to $
Metals belonging to 6 circles JgJvC are targeted, but among these metals, for example, captive substances such as tantalum (Ta) and titanium (Ti) can be used as di4 materials of co/f of DRA;□/T. It has been attempted, and even in this case, f
tnTh, U is the cause of the soft error.
アルファ線の放射は劣えばパッケージ材料からも必シ得
るが、チップ上に計Ａ護痕を設けることによシかな９４
Ｍ諷させることが可能であるのに対し、半導体素子を形
成する４体層又は絶縁層に対して紘防博が困翔で必るｏ
’フル７Ｉ祿放射に起因する前６己ンフト・工２−の
発生は薩牛専体ａ寛の構造。Emission of alpha rays can be obtained from the packaging material to a lesser extent, but it may be possible to do so by providing a trace on the chip.94
While it is possible to make a comparison with M, it is difficult and necessary for Hirobo Hiroshi to deal with the four-layer or insulating layer that forms a semiconductor element.
'The occurrence of the previous 6th self-lift and engineering 2- due to the full 7I radiation is the structure of the Satsuma beef exclusive a-hiro.
動作条件等に依存し、一般に半纏体記憶装置ρ；高集積
化され、各メモリーセルθシ荷蓄ａｔが少くなるに伴っ
てノット曇エン−が発生し易くなる。Depending on operating conditions and the like, in general, as semi-integrated storage devices become highly integrated and the storage capacity of each memory cell θ decreases, knot clouding becomes more likely to occur.
従来′＠肯された一例としては、４ｒ（ｂｉｔの１４Ｍ
をこりいて、アルファ縁によるソフト・エラーで偏Ａｌ
ｌシが１０４乃至１０”ＦＩＴ裸度まで劣化する場合が
めることが知られている０
４ｉ：礒明は、系ＩＶＡ族、箒Ｖム族、縞Ｖｔ人族もし
くは嬉％′１１臘に属し、かつ４４周期乃至第６周期に
属する金属（以下４融点金属と略称する２又は咳高戚点
金ｌＩ４を含むオ菫４Ｌ、＜は化奮ｑよすなる、真空４
膚法又はスバッタリ／グ去により形成された導体層又は
絶縁４ｔ−有する一Ｐ４体値−に関して、前記のアルフ
ァ線による〕７）・エフ−に就ｉての１ｉ！願性を改善
することｔ−目的とする０本発明においては、前ｖ！、
都体層又は絶縁層を形成するにあたりて、〆空蒸着のｉ
ＩＡ発源又はスノ（ツタ・ターゲットとして、純度が９
９．９９９％以上＋２）該高融点金属、又は純度が９９
．９９９４以上の核高融点金属を含む合金もしくは化合
物を用いること全労歓とし、それによって純度が９９．
９９９−以上の該高融点金属又は該高融点食Ｊ４を含む
合金もしくは化合物よルなる導体層又は絶縁層を有する
半導体装置が提供される。An example that has been accepted in the past is 4r (bit of 14M).
due to the soft error caused by the alpha edge.
It is known that when the lushi deteriorates to 104 to 10" FIT nakedness, it is known that Metals belonging to the 44th period to the 6th period (hereinafter abbreviated as 4 melting point metals 2 or 4L containing metals with high melting points,
Regarding the conductor layer or insulation 4t formed by the skin method or the splatter/glue removal, the above-mentioned alpha rays]7)・F-i for 1i! In the present invention, the purpose is to improve the applicability of the previous v! ,
When forming a metropolitan layer or an insulating layer,
IA source or snow (as ivy target, purity 9
9.999% or more +2) The high melting point metal or purity is 99%
．． It is acceptable to use an alloy or compound containing a nuclear refractory metal with a purity of 999.
There is provided a semiconductor device having a conductive layer or an insulating layer made of an alloy or compound containing the high melting point metal or the high melting point eclipse J4 of 999- or higher.
更に前記の純度が９．９．９９９％以上の該高融点金属
、又は純度が９９．９９９％以上Ｑ該高融点金ｍｔ−含
む合金もしくは化合物よりなる蒸発源又はスパッタータ
ーゲットｔｓ該高融点金属の気体状化合゛物管用いてＣ
ＶＤ法により形成すること、又はゾ。Furthermore, an evaporation source or sputter target made of the high melting point metal with a purity of 9.9.999% or more, or an alloy or compound containing the high melting point gold mt with a purity of 99.999% or more of the high melting point metal. C using a gaseous compound tube
Forming by VD method, or
−／メルト法により実現することを特徴と子るＯ以下本
発明を実施例により具体的に説明する０まｆ、ｃｖｏ法
によ）蒸発源又はスパッタ・り′−グツトを形成する実
施例としては例えば水素（８）ｔ−命ヤリアガス、アル
ゴン（ムｒ）を皇軍（Ｎ重）或いはＨａ！希釈ガスとし
て、例えば弗化モリブデン（ＭｏＦＪよｐ化学反応
Ｍ ｏ Ｆｓ ＋ ３１１ｔ ４ Ｍｏ ＋ ６ ＨＦ
によりＭｏｔ４る０この際にＴｈ、ＵはＭｏとの蒸気圧
の羞によｐ形成された固相Ｍｏ中に混入１く、原料とし
たＭｏＦ・よ９１１度が同上する０この効果は反応温度
が高くなるに伴って大きくなるために１０００℃以上、
例えば１２０００程直で実施するが、半導体基板上に直
接導体層を形成する場合と異な１反応ｉｕｃ’ｅ任意に
選択することがり能でらりて、不方法によりて９９．９
９９チ以上９９．９９９９チ根度θ純度の蒸発源又はス
パッタφターゲッ）１−得ることが可能である。The present invention will be explained below in detail with reference to examples, as examples of forming an evaporation source or sputtering groove (by CVO method). For example, hydrogen (8) t-life gas, argon (mr) the imperial army (N heavy) or Ha! As a diluent gas, for example, molybdenum fluoride (MoFJ)
At this time, Th and U are mixed into the solid phase Mo formed by the vapor pressure of Mo, and the raw material MoF is 911 degrees.This effect is due to the reaction temperature. 1000℃ or more because it becomes larger as the temperature increases,
For example, it is carried out directly at about 12,000 yen, but unlike the case of directly forming a conductor layer on a semiconductor substrate, it is possible to arbitrarily select one reaction IUC'e, and it is 99.9 yen depending on the method.
It is possible to obtain an evaporation source or sputter φ target with a purity of 99.9999 degrees or more.
ま友、ｆ４一点食属化合物例えばＭｏ５１ｇ’を得るた
めには、モノシラン（Ｓ１ｆＩＪ等を反応気体中に混合
する。Well, in order to obtain the f4 single-point edible compound, for example Mo51g', monosilane (S1fIJ, etc.) is mixed into the reaction gas.
高純度の蒸発源又はスパッタ・ターゲットを得る油の′
Ａ実施例しては、例えば會属ＭＯにゾーンメルト法５ｃ
通用して９９．９９９１以上にＩＡ遜することがｏＪ能
でるる。of oil to obtain a high purity evaporation source or sputter target.
As an example of A, for example, zone melt method 5c is applied to the associated MO.
Generally speaking, it is possible to outperform IA over 99.9991.
前記実施例等によ多形成された線区９９．９９９−以上
の蒸発源又はスパッタ争ターゲツ）を用いて半導体装置
の導体層又はｌＡ＃層を形成する実施例としては次のよ
うな棟々の方法がめる０まず、線区９９．９９９チ以上
の一種類のｄＩ＆一点食属よりなるターグツｌ用い、Ａ
ｒ等の茶請性ガス中でスパッタさせて、半導体基板上に
４４ｇ９９．９９９チ以上の咳高融点金属よりなる導体
層を形成するＯ純度９９．９９９チ以上の高融点金属よ
りなるター偵
ゲｙトを二種類又はそれ以上を用い、Ａｒ等の不燈に＠
ｆ ９９．９９９％以上の咳高融点金属の合金又は化合
物よりなる導体層を形成する。Examples of forming a conductor layer or lA# layer of a semiconductor device using the 99.999- or more line sections (evaporation source or sputtering target) formed in the above embodiments, etc. are as follows. First, use one type of dI & one-point food category consisting of line section 99.999 or more, A
A target made of a high melting point metal with a purity of 99.999 cm or more is formed on a semiconductor substrate by sputtering in a tea-like gas such as R. Using two or more types of y, @ to non-lighting such as Ar
f A conductor layer made of an alloy or compound of a high melting point metal of 99.999% or more is formed.
前記例と同様に、純度９９．ｅｖ９％以上のＡ一点食属
よりなるターゲットと、高純度シリコンよシ晃
なるターゲットとを用いＡｒ等の不治性ガス中で同時に
スパッタさせて、半導体４板上に高ｆ４度の該金属珪化
豐よりなる導体層を形成する。As in the previous example, the purity was 99. Using a target made of single-point A metal with an ev of 9% or more and a target such as high-purity silicon, sputtering is performed simultaneously in an incurable gas such as Ar, and the metal silicide with a high f4 degree is sputtered onto four semiconductor substrates. A conductor layer consisting of the following is formed.
又、金ＩＩ４珪化吻よシなる導体ノーは、該高融点食上
属のみをターゲットとし、Ａｒ尋の茶漬性ガスに５ｉＨ
４等を添加した混合気体ｔ４人してスパッタリングを実
施することによっても形成場れる。In addition, the conductor No. 4, which has a gold II4 silicified nose, targets only the high melting point eclipse, and 5iH
The formation field can also be formed by performing sputtering using a mixed gas to which 4 or the like is added.
更にＩＩ４ｆｍ点金属窒点食は、窒素ガス（Ｎ宜ンｋ
Ａｒうｈ
等の不治性ガスに代え或いは〃αえることに゛よ多形成
され、高融点金Ｊ４＃！化物は酸素ガス（ＯｌＪをＡｒ
ｈ
等の不信性ガスに加えることにより形成される。Furthermore, point II4fm metal nitrogen pitting is caused by nitrogen gas (N
High melting point gold J4#! The compound is oxygen gas (OlJ is Ar
It is formed by adding it to an untrustworthy gas such as h.
なお、高融点金属酸化物は前記方法によシｌＸ金属層を
形成した後に熱酸化法等により酸化物とすることも可能
である。Incidentally, the high melting point metal oxide can also be made into an oxide by thermal oxidation method or the like after forming the IX metal layer by the above method.
以上の例はスパッターターゲットとして高融点金属を用
いた例であるが、先に述べた如き閥融点金属化合物もし
くは合金をターゲットとじてスノくノタリングヲ果厖す
ることによりても、該尚融点釜属化合物もしくは合金よ
ｐなる導体層又は杷一層が得られる。The above example is an example in which a high melting point metal is used as a sputter target, but it is also possible to use a high melting point metal compound or alloy as a target to achieve a high melting point metal compound as described above. Alternatively, a conductive layer or a loquat layer made of alloys can be obtained.
以上側れの場合においてもスノ（ツタ・ターゲット（ｉ
：純度９９．９９９チ以上の純度とするときに、形成さ
れる４体躯又は絶縁層の純ｆｔ−９’ｊ、’ｊ９９チ以
上とすることが可能で６夕、又、酩子ビーム蒸宥法につ
いても蒸発源を９９．９９９−以上の純度とするときト
コ様の結果が得られる。Even in the case of sideways, snow (ivy target (i)
: When the purity is 99.999cm or higher, the purity of the four-body structure or insulating layer to be formed can be ft-9'j,'j99cm or higher. Regarding the method, similar results can be obtained when the purity of the evaporation source is 99.999 or higher.
以上の如くにして形成されｆｃ純１ｉ９９．９９９−以
上の導体ノー又は絶縁ノーはφずれもアルファ線放射−
がｌδ’１ｌｉｉ！／”ｈｏｕｒ以下を示し、純度９９
．９９９９％と得た例についてはアルファ巌放射量が１
０１Ｊ６１／ｃｔｌｌ・ｈｏｕｒ以下を得る例も得られ
た。そしてこの導体層を半纏体記憶装置に通用して、１
０乃玉１Ｏ１Ｉ″ＩＴ４！度以下の高信頼度を得ること
ができた。The fc pure 1i99.999 or more conductor or insulator formed as described above also emits alpha rays even if there is a φ deviation.
is lδ'1lii! /”hour or less, purity 99
．． For the example obtained with 9999%, the alpha ion radiation amount is 1
An example was also obtained in which less than 01J61/ctll·hour was obtained. Then, this conductor layer is used in a semi-integrated storage device, and 1
We were able to obtain high reliability of less than 0 degrees 1O1I''IT4! degrees.
以上説明した即く、本発明は、純度９９．９９９−以上
の前記扁融点並属、又は咳高融点差属金含む合金もしく
は化合物よりなる１ＩＡ４Ｉ源又はスパッタ壷ターゲッ
トを用いる真！、にｄ法文はスバッタリ／グ法によ１純
度９９．９９９チ以上の導体層又は絶縁４ｔ−形成する
ことによシ、トリタム（Ｔｂ）２り２／（Ｕ）等のアル
ファ嶽奴耐吻質の含ｉ菫を従来の１／１０以−Ｆとし、
アルファ編放射によるソフト・工２−に関する信頼ＢＬ
：ｔｌＯ倍以工高める効果を有する。As described above, the present invention provides a method using a 1IA4I source or a sputtering target made of an alloy or compound containing metals with similar or high melting points having a purity of 99.999 or higher. , by forming a conductive layer or insulating layer with a purity of 99.999 or higher by the Subbattari/G method, alpha resistant materials such as tritum (Tb) 2 and 2/(U) etc. The quality of the violet is set to 1/10 or more of the conventional value,
Trust BL regarding software/engineering 2- by alpha edition radiation
:Has the effect of increasing tlO times more.
Claims (1)
ｙｅ ４ Ｌ ＜ ハｇＶＩ族に属し、かつ、第４ＰＭ
期乃至第６Ａ期に属する純度が９９．９９９係以上の金
属、又は純度が９９．９９９チ以上の該金４を含む合金
もしくは化合物で構成した導体層又は絶縁層を半導体基
板上に設けてなる半導体装置０ （２１ｇｌＶＡ族、！ＶＡ族ｔ ａｉＶＩＡ族もＬ＜、
４ｍ）ＪＩＡに属し、かつ、第４ｆＲＩＡ乃至！Ｘ６周
期に属する純度が９９．９９９−以上の金属、又は純度
が９９．９９９−以上の該金属を含むせ薫もしくは化合
″ａｔ−蒸発源又はスパッタ・ターゲットとして、半導
体ｉ板上に、該金属又は該金属を含む曾釡もしくは化合
物よりなる導体層又は絶縁層を、真空蒸着又はスパッタ
蒸着すること′ｆｔ籍砿とする半導体装置のＪＡ：Ｉ！
Ｌｙ５法０ （３） 前記蒸発源又は前記スノ（ツタ・ターゲット
が該＃Ｌ属を言む化合留よシ気相成長法によって形成さ
れたものであること′ｆｔ籍倣とする脣Ｉ／ｆ請求の城
門第２現記−の半導体装置の製造方法。 （４）１５１記蒸発源又は前記スパッタ・ターゲットが
、ゾーンメルト法によりｄ［ｔ９９．９９９−以上とさ
れたものでるることを特徴とする特１ｆｆ−請求の範囲
第２現記−の半導体装置の製造方法。[Claims] (1) glVA, i, jgVAfjj gvrA
ye 4 L < Belongs to the HagVI tribe and is the 4th PM
A conductive layer or an insulating layer made of a metal with a purity of 99.999% or higher belonging to the period to 6A period, or an alloy or compound containing the gold 4 with a purity of 99.999% or higher is provided on a semiconductor substrate. Semiconductor device 0 (21glVA group, !VA group taiVIA group also L<,
4m) Belongs to JIA and is from the 4th fRIA to! A metal with a purity of 99.999 or more belonging to the Or vacuum-depositing or sputter-depositing a conductive layer or an insulating layer made of a metal or a compound containing the metal.JA:I!
Ly5 method 0 (3) The evaporation source or the ivy target is formed by a compound distillation method or a vapor phase epitaxy method that refers to the #L group. A method for manufacturing a semiconductor device according to Claim No. 2 of the present invention. (4) The 151st evaporation source or the sputtering target is produced by a zone melting method to have d[t99.999- or more. A method of manufacturing a semiconductor device according to the second aspect of claim 1ff.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16125481A JPS5861666A (en) | 1981-10-09 | 1981-10-09 | Semiconductor device and preparation of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16125481A JPS5861666A (en) | 1981-10-09 | 1981-10-09 | Semiconductor device and preparation of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5861666A true JPS5861666A (en) | 1983-04-12 |
Family
ID=15731589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16125481A Pending JPS5861666A (en) | 1981-10-09 | 1981-10-09 | Semiconductor device and preparation of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5861666A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066425A (en) * | 1983-09-22 | 1985-04-16 | Nippon Telegr & Teleph Corp <Ntt> | High-purity molybdenum target and high-purity molybdenum silicide target for lsi electrode and manufacture thereof |
| JPS60234364A (en) * | 1984-05-07 | 1985-11-21 | Toshiba Corp | Semiconductor device |
| JP2002069624A (en) * | 2000-08-30 | 2002-03-08 | Toshiba Corp | Sputtering target |
-
1981
- 1981-10-09 JP JP16125481A patent/JPS5861666A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066425A (en) * | 1983-09-22 | 1985-04-16 | Nippon Telegr & Teleph Corp <Ntt> | High-purity molybdenum target and high-purity molybdenum silicide target for lsi electrode and manufacture thereof |
| JPS60234364A (en) * | 1984-05-07 | 1985-11-21 | Toshiba Corp | Semiconductor device |
| JP2002069624A (en) * | 2000-08-30 | 2002-03-08 | Toshiba Corp | Sputtering target |
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