JPS5861633A - Metallic pattern forming method - Google Patents

Abstract

PURPOSE:To simplify the manufacture of a metallic pattern by a method wherein, when the comb-type electrode pattern which will be used for an elastic surface wave generating device and the like is formed, a metal layer which can be etched by sputter etching is laminated on a substrate, and an etching process is performed using a mask. CONSTITUTION:The prescribed substrate 25 is obtained by forming and laminating on an Si substrate 21 a layer 22 to be used for mask substrate having a small X-ray damping factor, a metal layer 23 such as Au/Ti and the like to be used as ground layer, an intermediate layer 24 to be used as a mask such as SiO2 and the like, and a mask material layer 29 with an aperture 30 is provided on the back side of the substrate 21. A metal layer 26 for etching such as Ti and the like and ground layer 27 of SiO2 are laminated on the layer 24, and a resist layer 32 of prescribed pattern is provided on the layer 27. Then, the layer 24 is exposed from the layer 32 by performing a reactive sputter-etching, and a metal layer 35 of the material same as that of the layer 34 is coated while maintaining a space between the small-sized layers 34 consisting of a layer 26 remained under the layer 32. Subsequently, the layers 34 and 35 only are left over, a comb-shaped X-ray absorbing layer 39 is formed by removing the exposed part of the layer 22, to be used for the substrate, by performing an etching using said layers 34 and 35 as a mask, and a concavity is provided on the back side of the substrate 21.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a metal pattern, and for example, when forming an X-ray mask plate having an i-splash effect with respect to X-rays, the present invention relates to a method for forming a metal pattern. This is suitable for use in cases where the film is formed.

As a metal pattern forming method applicable to forming an X-ray mask plate, the method described below with reference to the vg1 diagram has been proposed.

That is, a group fi1 made of, for example, St is prepared in advance (FIG. 1A), and then, for example, 8102, 81 are formed on the substrate 1.
．． An etching mask@layer 2 made of N. ), Next, by etching the layer 2 which uses the mask layer 3 as a mask, a mask layer 4 having the same pattern as the pattern of the mask) ii15 is formed from the mask material layer 2. Remove layer 3 (FIG. 1E).

Next, by selectively etching the substrate 1 using the mask layer 4 as a mask, e#5 having a V-shaped cross section and having a pattern corresponding to the pattern of the mask layer 4 is formed on the substrate 1 (F° in FIG. 1). After that, the mask layer 4 is removed (FIG. 1G).
).

Next, on the substrate 1 on which the grooves 5 are to be formed, a layer 6 made of, for example, a polymeric material with a low X-ray attenuation rate is formed by burying the grooves 5 (FIG. 1H). After that, the layer 6 is separated from the base &1, and the layer 6 is formed into a protrusion 7 having an inverted V-shaped cross section and having a pattern corresponding to the pattern of the groove 5 of the substrate 1.
(FIG. 1 I).

After that, a metal layer 9 made of Au having a high absorption rate of XWA is formed as a metal pattern on one inclined surface of the protrusion s7 of the layered body 8 by an oblique vapor deposition method (FIG. 1J). , an X-ray mask plate 10 having a structure in which a metal layer 9 having a pattern corresponding to the pattern of the mask layer 6 is formed as a mask layer on a layered body 8 is obtained.

The above is a conventionally proposed method for forming a metal pattern that can be applied to forming an X-ray mask plate. The steps described above with reference to FIGS. 1A to 1 are required to obtain the metal pattern, and many steps are therefore required to obtain the layered body 8 for forming the metal pattern. In addition, when forming #15 of the base &1 having #I15 to obtain the layered body 8, the flange 5 is formed only with limited depth and width2, so the pattern of the metal pattern can be adjusted as desired.・Substrate 1 with 1115 in history
After forming the layer 6 which becomes the layered body 8 on top, when the layer 6 is obtained as the layered body 8 by separating it from the substrate 1 on which the grooves 5 are formed, the layered body 8 is damaged and the layered body 8 is damaged. has
Therefore, they have a habit of not being able to obtain the expected monetary pattern. Furthermore, the protrusion of the layered body 8
When forming the metal layer 9 on one of the inclined surfaces of the layer 7 by diagonal evaporation, the layered body 8 may be deformed and deteriorated due to the heat during the evaporation, and as a result, the metal pattern may differ from the intended pattern. There is a longing that you will never be able to have.

Furthermore, when the metal layer 8 is formed by oblique vapor deposition, it is difficult to make the metal layer 9 uniform in each part and to form it to a relatively large thickness. However, it has been difficult to form a mask layer having an X-ray attenuation rate of

Therefore, the present invention aims to propose a novel metal pattern forming method free from the above-mentioned drawbacks, which will become clear from the detailed description below.

For example, a relatively thin mask substrate layer 22 made of a material with a small attenuation rate of X-rays is placed on the surface of the substrate body 21 made of 8K.
, a base metal layer 26 made of, for example, AVη, 'Ni10r, etc., and a relatively thick mask intermediate layer 24 made of an organic compound such as an inorganic compound such as 8tO, 8t, N4, or polyimide, in that order. A substrate 25 formed by laminating layers by a method known per se is prepared in advance (see FIG. 2).

Then, on the substrate 25, that is, on the mask intermediate layer 24, an etching metal layer 26 made of, for example, T110r, Peng, T, etc., and a base layer 27 made of, for example, 8i02.8i, N4, etc.
A layer 28 made of, for example, electron beam resist is formed by a method known per se, and an etching mask material layer 29 made of, for example, 5tsN4 is formed on the long surface of the substrate body 21 by a method known per se. form (Figure 2B).

Next, for example, 02F6 is applied to the etching mask material layer 29.
A large opening 50 is formed by reactive sputter etching using a Freon gas such as, etc., and the mask material layer 29 having the opening 50 is thus obtained as the mask layer 61, and then the required hole 28 is formed on the mask layer 61. A mask #62 having the following characteristics is formed (FIG. 20).

Next, by performing a reactive sputter etching process on the base layer 27 using the mask layer 62 as a mask, using a Freon gas such as OF4.02F6, IIIjiI! The mask layer 33 having the pattern of the mask layer 32 is removed from the base layer 27.
is formed under the mask layer 32 (FIG. 2D).

Next, for example, OF4.02F6 for the metal layer 26 using the masks N52 and 56, and the cape and 02
The area of the metal layer 26 other than under the V-splash layers 52 and 53 and the area under the mask layers 52 and 33 is etched by Itagas plasma etching using Freon-based scum such as a mixed gas with
By removing S, a metal layer 5 is formed from the metal layer 26 having a smaller pattern according to the pattern of the mask layer 32.
4 is obtained under mask layers 32 and 33 (FIG. 2E).

Next, by depositing a metal of the same material as the metal layer 54 from above, the substrate 2 is deposited using the mask layers 32 and 33 as a mask.
5. A metal layer 35 made of the same material as gold 11sWp54 is formed on the intermediate layer 24 for the upper mask.
and 55 to form gold kJm5t5 (Fig. 2F)
. In this case, a metal layer 57 made of the same material as the metal layer 35 is formed on the mask layer 32.

Next, the mask layers 52 and 53 and the metal layer 67 are removed by a lift-off method, sputter etching method, ion etching method, etc. which are known per se (FIG. 2G).

Next, the masking intermediate layer 24 using the metal layer 36 as a mask is subjected to a reactive sputtering process using, for example, 02 gas to remove the area of the intermediate layer 24 other than under the metal WIi 56, and the metal layer 36 is removed from the intermediate layer 24. A patterned mask layer 38 is formed under the metal layer 36 (@2H).

Next, the metal layer 36 and the mask layer 38 are used as a mask by vapor deposition, electroplating, etc. to control the soft X@absorber layer 3 consisting of Au and Pt
9 is deposited (FIG. 2I). In this case, a layer 40 made of the same material as the X-ray absorber layer 39 is formed on the metal layer 36.

The metal layer '56 and the layer 40 above it are then removed in a manner known per se (FIG. 2J).

Next, by etching the mask layer 6B using the XP absorber layer 39 as a mask, the mask 1-58 is completely removed, and then by etching the underlying metal mesh layer 25 by 1%, The area other than the area under the ray absorber layer 39 is removed, and the X-ray absorber layer 59 is removed from the base metal layer 25.
7141 with a pattern of X! ! ! It is formed under the absorber layer 39 (FIG. 2K).

Next (by etching the substrate body 21 using this mask N451 as a mask, the boundary area of the substrate body 21 except under the mask layer !+1 is removed and an opening 42 is formed in the substrate 21 (see FIG. 2L)). on the mask substrate 1-22,
An X-ray mask plate 45 is obtained in which the X# class acquisition layer 39 having the next pattern is formed as a mask layer via the layer 41.

The above has clarified an example of the metal pattern forming method according to the present invention that can be applied to forming an X-ray mask plate.
According to the method of the present invention, there are a step of forming a metal layer 26 on a substrate 25 (FIG. 2B), and a step of forming a predetermined pattern on the metal layer 26 via a hierarchical body (base layer 27). The process of forming a mask layer 52 (#!2 Figure C) and the etching treatment of the metal layer 26 using the mask layer 52 as a mask result in a pattern of the metal layer 26 to the mask layer 52 compared to that of the mask layer 52. 1. Forming a metal layer 34 with a small pattern (FIG. 2E); i-splash layer'52
This method includes a step of forming a metal layer 55 on the substrate 25 using the mask as a mask (see Figure 2F) to obtain the desired metal pattern using the metal layer 36 made up of the metal layers 34 and 35. This method has the great feature that the desired metal pattern can be easily obtained by stirring compared to the method shown in FIG. 1 without having the drawbacks of the conventional method described above in FIG. be. Further, according to the present invention, it is possible to obtain a desired metal pattern finely.

Next, with reference to FIG. 5, an example in which the metal pattern forming method according to the present invention is applied to a method for forming a comb-shaped electrode of a surface acoustic wave device having a bowl-shaped electrode will be described.
tNb05. A substrate 51 made of an optical crystal material such as LITaO, s- is prepared in advance (31A).

Then, on the substrate 51, Al, Al-Ou, A
A metal layer 52 made of T-81 or the like is formed to a required thickness by a method known per se (No. 3-B).

A layer 53 of, for example, electron-resist is then formed on the metal layer 52 by a method known per se (FIG. 3C), followed by irradiation of the layer 55 with an electron beam in the desired pattern. A subsequent process including a '#Li& process forms a mask layer 54 with the desired pattern from layer 56 (fifth step D).

Next, the metal layer 52 using the mask layer 54 as a mask is subjected to a plasma etching process using a chlorine gas such as 0OJ4 to remove the area of the metal layer 52 other than the area under the mask layer 54 and the outer part under the mask layer 54. Then, metal layer 5
2, a metal layer 55 is obtained under the mask layer 54 having a pattern corresponding to, but smaller than, the pattern of the mask layer 52 (FIG. 3B).

Next, a metal nozzle 56 made of the same material as the metal layer 55 from above is formed on the substrate 51 using the mask layer 54 as a mask by a known deposition process. Figure 3F). In this case, a metal layer 57 made of the same material as the metal layer 56 is formed on the mask layer 54.

Next, the mask layer 54 and the metal layer 57 are removed by a known method such as a lift-off method or a gas plasma etching method using 02 gas (FIG. 3G), thus forming a desired pattern on the substrate 51. metal layers 55 and 5 having
A surface acoustic wave device 58 is obtained in which 6 is formed as a comb-shaped electrode. .

The above has clarified an example of the metal pattern forming method according to the present invention that can be applied when forming a surface acoustic wave device.According to the method of the present invention, the metal layer 52 is formed on the substrate 51. (FIG. 3B) and the metal layer 52
By forming a mask layer 54 having a predetermined pattern thereon (FIG. 3D) and etching the metal layer 52 using the mask layer 54 as a mask, the metal layer 52 is etched according to the pattern of the mask layer 54. That is, a step of forming a metal layer 55 having a smaller pattern than that (FIG. 3E), and a step of forming a metal layer 56 on the substrate 51 using the mask layer 54 as a mask (FIG. 3F). Since this is a method in which a desired metal pattern is obtained by including the metal pattern, the desired metal pattern can be formed using the features of the present invention described in Section 2- above.

[Brief explanation of drawings]

Figures 1 λ to J are line sectional views of the conventional metal pattern forming method when applied to the manufacturing method of an X-ray mask plate. Sequential steps showing an example of the metal pattern forming method according to the present invention when applied to a manufacturing method - Linear cross-sectional diagrams in this section, Figures 6A to 6G are applied when forming a bowl-shaped electrode of a surface acoustic wave device FIG. 3 is a line cross-sectional view showing one example of the metal pattern forming method according to the present invention in successive steps. In the figure, 25 is a substrate, 26 is a metal layer, 27 is a base layer, 2B
is a resist layer, 32.35 is a mask layer, 54.35 and 36 are metal layers, 39 is an X@ absorber layer, 43 is an X-ray mask plate, 51 is a substrate, 52 is a metal layer, 54 is a mask layer, 58
indicate surface acoustic wave devices, respectively. Applicant: Nippon Electric Power Bank Corporation III Figure 1 @ Figure 2 JLI ;I! ! j Figure 2 Figure 2 Figure 8

Claims (1)

[Claims] A step of forming a metal layer on a predetermined substrate; a step of forming a mask layer having a first pattern on the metal layer with or without a layered body; and the mask. forming a second metal layer having a second pattern smaller than the first pattern according to the first pattern from the metal layer by etching the metal layer using the layer as a mask; forming a fifth metal layer having the first pattern on the substrate using the mask as a mask.