JPS5856304A - コンテイギユアス・デイスク・磁気バブル素子用ガ−ネツト膜 - Google Patents
コンテイギユアス・デイスク・磁気バブル素子用ガ−ネツト膜Info
- Publication number
- JPS5856304A JPS5856304A JP56154384A JP15438481A JPS5856304A JP S5856304 A JPS5856304 A JP S5856304A JP 56154384 A JP56154384 A JP 56154384A JP 15438481 A JP15438481 A JP 15438481A JP S5856304 A JPS5856304 A JP S5856304A
- Authority
- JP
- Japan
- Prior art keywords
- garnet film
- ion
- film
- contiguous
- garnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 37
- 239000002223 garnet Substances 0.000 title claims abstract description 31
- -1 yttrium) Chemical class 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 239000011575 calcium Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 150000002910 rare earth metals Chemical class 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 4
- 239000002356 single layer Substances 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 2
- 238000005468 ion implantation Methods 0.000 description 22
- 239000010410 layer Substances 0.000 description 16
- 230000008859 change Effects 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 230000005415 magnetization Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005350 ferromagnetic resonance Effects 0.000 description 2
- 241000047703 Nonion Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56154384A JPS5856304A (ja) | 1981-09-29 | 1981-09-29 | コンテイギユアス・デイスク・磁気バブル素子用ガ−ネツト膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56154384A JPS5856304A (ja) | 1981-09-29 | 1981-09-29 | コンテイギユアス・デイスク・磁気バブル素子用ガ−ネツト膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5856304A true JPS5856304A (ja) | 1983-04-04 |
| JPS6244843B2 JPS6244843B2 (enrdf_load_stackoverflow) | 1987-09-22 |
Family
ID=15582953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56154384A Granted JPS5856304A (ja) | 1981-09-29 | 1981-09-29 | コンテイギユアス・デイスク・磁気バブル素子用ガ−ネツト膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856304A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109023527A (zh) * | 2018-08-30 | 2018-12-18 | 电子科技大学 | 一种面外各向异性石榴石单晶薄膜及其制备方法 |
-
1981
- 1981-09-29 JP JP56154384A patent/JPS5856304A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109023527A (zh) * | 2018-08-30 | 2018-12-18 | 电子科技大学 | 一种面外各向异性石榴石单晶薄膜及其制备方法 |
| CN109023527B (zh) * | 2018-08-30 | 2021-03-30 | 电子科技大学 | 一种面外各向异性石榴石单晶薄膜及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244843B2 (enrdf_load_stackoverflow) | 1987-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li | Domain walls in antiferromagnets and the weak ferromagnetism of α-Fe 2 O 3 | |
| US4070658A (en) | Ion implanted bubble propagation structure | |
| US4563236A (en) | Method for making large area stable domains | |
| Boon et al. | Rotational hysteresis loss in single-crystal silicon-iron | |
| JPS5856304A (ja) | コンテイギユアス・デイスク・磁気バブル素子用ガ−ネツト膜 | |
| McCurrie et al. | Dependence of the permanent magnet properties of Mn 55 Al 45 on particle size | |
| Taylor | Charged walls in amorphous magnetic films | |
| Bates et al. | The domain structure of magnetoplumbite | |
| JPS6029997A (ja) | 磁気バブル転送路 | |
| JPS6213801B2 (enrdf_load_stackoverflow) | ||
| Spratt et al. | Two interacting cubic particles: effect of placement on switching field and magnetisation reversal mechanism | |
| JPS5933963B2 (ja) | 磁気バブル用磁性ガ−ネット膜 | |
| JPH0348403A (ja) | 磁気バブル素子 | |
| JPS636949B2 (enrdf_load_stackoverflow) | ||
| Han et al. | Engineered spin configuration in spin valve with customized synthetic antiferromagnetic coupling and perpendicular magnetic anisotropy | |
| Breed et al. | Garnet films for fast magnetic bubbles | |
| JPS5834904A (ja) | コンテイギユアス・デイスク磁気バブル素子用ガ−ネツト膜 | |
| US4207613A (en) | Bubble device containing a ferrite biasing magnet | |
| JPS5987805A (ja) | 磁気バブル素子用ガ−ネツト膜 | |
| JPS6048061B2 (ja) | 磁気バブル装置 | |
| JPS586579A (ja) | バブル磁区素子 | |
| JPS58125806A (ja) | コンテイギユアス・デイスク・磁気バブル素子用ガ−ネツト膜 | |
| JPS6216268B2 (enrdf_load_stackoverflow) | ||
| JPH039079B2 (enrdf_load_stackoverflow) | ||
| JPH0395792A (ja) | 磁気バブルメモリ |