JPS5852547A - Measuring device for concentration distribution of impurities in semiconductor crystal - Google Patents
Measuring device for concentration distribution of impurities in semiconductor crystalInfo
- Publication number
- JPS5852547A JPS5852547A JP15102681A JP15102681A JPS5852547A JP S5852547 A JPS5852547 A JP S5852547A JP 15102681 A JP15102681 A JP 15102681A JP 15102681 A JP15102681 A JP 15102681A JP S5852547 A JPS5852547 A JP S5852547A
- Authority
- JP
- Japan
- Prior art keywords
- light
- laser diode
- impurities
- concentration distribution
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/255—Details, e.g. use of specially adapted sources, lighting or optical systems
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体結晶中の不純物濃度分布測定装置、特に
ガリウム砒素（ＧａＡｓ）バルク結晶中のりｐム（Ｃｒ
） １１４度分布の測定装置に係り、波長１．３５（μ
ｍ）の単色光の峡部係数からＣｒ＃度を推定する方式に
基づいた不純物濃度分布測定装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for measuring impurity concentration distribution in a semiconductor crystal, and in particular to an apparatus for measuring impurity concentration distribution in a gallium arsenide (GaAs) bulk crystal.
) The wavelength is 1.35 (μ
The present invention relates to an impurity concentration distribution measuring device based on a method of estimating Cr# degree from the isthmus coefficient of monochromatic light.
Ｃｒ をドープした半絶縁性ガリウム砒素（ＧａＡａ
）結晶は、ＧａＡｓ ＦＥＴやｒｃ 等の半導体素
子の基板として用いられているが、当該基板結晶中の不
純物濃度のウニ・へ−面内の均一性は半導体素子の動作
特性延〜・では信頼性の面にも影響を及ぼす。このため
、半導体素子の製造を行うに当たって、基板結晶中の不
純物濃度分布を高分解能で調べることは重要な工程であ
る。Semi-insulating gallium arsenide (GaAa) doped with Cr
) crystals are used as substrates for semiconductor devices such as GaAs FETs and RCs, but the in-plane uniformity of the impurity concentration in the substrate crystals affects the operating characteristics of semiconductor devices and their reliability. It also affects aspects of Therefore, in manufacturing semiconductor devices, it is an important step to examine the impurity concentration distribution in the substrate crystal with high resolution.
上述のＧａＡｓ 基板中の不純物クロム原子濃度分布
の測定は、Ｃｒ の吸収係数測定に基礎をおいている
。第１図は従来技術における不純物濃度分布の測定装置
の概略図である。以下同図を診照して従来技術を説明す
る。The measurement of the impurity chromium atomic concentration distribution in the GaAs substrate described above is based on the measurement of the absorption coefficient of Cr. FIG. 1 is a schematic diagram of a conventional impurity concentration distribution measuring device. The prior art will be explained below with reference to the same figure.
光源１としてはタングステンランプが用いられており、
当該ランプは白色光源である。また図中２は分光器であ
’Ｊ、Ｃｒ が波長１．３５ （μｍ）付近に吸収帯
をもっていることから、白色光の中から当該波長の光を
選択する目的で使用される。かかる選択された光を工光
チョンパーにより強度変調された後に集光レンズ４およ
びピンホール５を通して小さな径のスポットに絞られ、
試料（ウェハ）３上に照射される。A tungsten lamp is used as the light source 1,
The lamp is a white light source. In addition, 2 in the figure is a spectroscope, which is used for the purpose of selecting light of that wavelength from white light, since Cr has an absorption band around a wavelength of 1.35 (μm). After the selected light is intensity-modulated by an optical chopper, it is focused into a small diameter spot through a condenser lens 4 and a pinhole 5,
A sample (wafer) 3 is irradiated with light.
ウェハ３を通過した透過光は光検知器６で電気信号に変
換され、増幅器７を通し、演算回路８で吸収係数に変換
される。この結果はＸ−ＹＶコーダー９にウェハ上の照
射位置とともに不純物嬢度の一次元分布として記録され
る。なお、ウェハ３は移動ステージ１２上に保持され、
光軸の垂直方向（図中矢印方向）に移動可能である。The transmitted light that has passed through the wafer 3 is converted into an electrical signal by a photodetector 6, passed through an amplifier 7, and converted into an absorption coefficient by an arithmetic circuit 8. This result is recorded in the X-YV coder 9 as a one-dimensional distribution of the impurity degree together with the irradiation position on the wafer. Note that the wafer 3 is held on a moving stage 12,
It is movable in the direction perpendicular to the optical axis (in the direction of the arrow in the figure).
ところで、上記従来技術において最も重要なことは濃度
分布に対する分解能であ心。高分解能を達成するにを工
、分光器２から出た単色光を集光レンズ４とピンホール
５ｉＣよってできるだけ／」＼さな径のスポットに絞Φ
必要があるが、タングステンランプ１のフィラメントが
太きいため十分小さなスポットを効率よく得ることがで
きない。By the way, the most important thing in the above conventional technology is the resolution of the concentration distribution. In order to achieve high resolution, the monochromatic light emitted from the spectrometer 2 is narrowed down to a spot with a small diameter as much as possible by the condenser lens 4 and pinhole 5iC.
However, since the filament of the tungsten lamp 1 is thick, it is not possible to efficiently obtain a sufficiently small spot.
一方、装置中に分光器や集光レンズなどを含むため、装
置構成の複雑化、測定手順の繁雑さの原因となり、測定
能率の低下、測定誤差の増大なまねくおそれがある。On the other hand, since the device includes a spectroscope, a condensing lens, etc., the device configuration becomes complicated and the measurement procedure becomes complicated, which may lead to a decrease in measurement efficiency and an increase in measurement errors.
以上述べた如（、従来技術におけるＧａＡｓ 結晶基
板中のＣｒ 不純物濃度の基板ウェハー面内における
一次元分布測定には、空間的分解能、装置構成の面で問
題があり、半導体素子製造効率の低下の原因になる。As mentioned above, the conventional one-dimensional distribution measurement of the Cr impurity concentration in a GaAs crystal substrate within the substrate wafer surface has problems in terms of spatial resolution and equipment configuration, and may lead to a decrease in semiconductor device manufacturing efficiency. become the cause.
本発明の目的は上述した従来技術における問題点を解決
する事にある。かかる目的を達成するため、本願の発明
者は、単色光光源を用い、空間的な分解能の向上した半
導体結晶中の不純物濃度測定製電を開発した。An object of the present invention is to solve the problems in the prior art described above. In order to achieve this objective, the inventors of the present application have developed an electronic method for measuring impurity concentration in semiconductor crystals with improved spatial resolution using a monochromatic light source.
以下、添付図面を参照して本発明の詳細な説明する。Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
第２図は本発明における不純物測定装置の概略図である
（図中、第１図と同じ部分は同じ符号で示されている。FIG. 2 is a schematic diagram of the impurity measuring device according to the present invention (in the figure, the same parts as in FIG. 1 are indicated by the same symbols.
）同図に於いてはインジウム燐（ＩｎＰ ）レーザーダ
イオード２１が光源として使用され、当該光源から出る
光は波長１．３５ （μｍ）の単色光である。上記単色
光は集光レンズ１４によって集光され、ＧａＡｓ ウ
ェハー３に照射されろ。) In the figure, an indium phosphide (InP) laser diode 21 is used as a light source, and the light emitted from the light source is monochromatic light with a wavelength of 1.35 (μm). The monochromatic light is condensed by a condenser lens 14 and irradiated onto the GaAs wafer 3.
一方、透過光強度は従来技術と同じ方法でウニ・・−照
射位置とともｖｃ ｘ −ｙレコーダー９１Ｃ記録され
る。光源として用いられるＩｎＰレーザーダイオード２
１は、第３図にその斜視図で示される如（、下部にリー
ド紗３１を設けたステム３２によって構成され、当該ス
テム３１の側面には光源用の照射孔３３が設けられてい
る。当該ＩｎＰレーザーダイオードは波長１．３５ （
μｍ）付近に発光帯を持ち、発光部の直径は数１０（μ
ｍ）程度であり点光源として用いられる。On the other hand, the transmitted light intensity is recorded on the VC x-y recorder 91C along with the irradiation position of the sea urchin in the same manner as in the prior art. InP laser diode 2 used as a light source
1 is composed of a stem 32 with a reed gauze 31 provided at its lower part, and an irradiation hole 33 for a light source is provided on the side surface of the stem 31, as shown in a perspective view in FIG. InP laser diode has a wavelength of 1.35 (
The diameter of the light-emitting part is several tens of micrometers (μm).
m) and is used as a point light source.
上述した如（本発明の測定装置においては、ＩｎＰレー
ザーダイオードの発光部の直径が数１０（μｍ）程度で
あるため、集光したスポットも同程度の太きさまで絞る
ことが容易にできることから、高分解能を得ることが可
能である。また、 ＩｎＰレーザーダイオードは単色光
源であるため、分光器や二次元カントフィルターを必要
とせず、またレーザーダイオードの電源としてパルス電
源を使用Ｙ ）：＋ため、光検知器のドリフトによる影
響などを除去するための光チョッパーも不要となり、光
学系の装置構成を簡易化が可能になる。As mentioned above (in the measuring device of the present invention, the diameter of the light emitting part of the InP laser diode is about several tens (μm), so the focused spot can be easily narrowed down to the same size. It is possible to obtain high resolution.Also, since the InP laser diode is a monochromatic light source, it does not require a spectrometer or two-dimensional cant filter, and a pulsed power source is used as the power source for the laser diode. There is also no need for an optical chopper to remove the effects of drift of the photodetector, making it possible to simplify the configuration of the optical system.
以上説明した如く、本発明によれば装置構成が簡単でし
かも高分解能が得られるＧａＡａ 結晶中のＣｒ
Ｂ度分布測定装置が提供され、半導体素子製造効率の向
上および装量信頼性の向上に太いに貢Ｍ−ｆ６ ｉ、、
１７）−ｔ）あ、。 １なお、本発明装置におけ
るＩｎＰレーザーダイオード２１および集光レンズ１４
０代わりに光ファイバー付きのレーザーダイオードを使
用することができる。かかる装置によれば、照射光をウ
ェハー表面まで光ファイバーによって誘導でき、自由度
の高〜・光学系を有する半導体結晶中の不純物濃度分布
測定装置を提供することが可能となる。As explained above, according to the present invention, the device configuration is simple and high resolution can be obtained.
A B degree distribution measurement device has been provided, which has greatly contributed to improving semiconductor device manufacturing efficiency and loading reliability.
17)-t) Ah. 1. Note that the InP laser diode 21 and the condensing lens 14 in the device of the present invention
0 can be replaced by a laser diode with an optical fiber. According to such an apparatus, irradiation light can be guided to the wafer surface by an optical fiber, and it is possible to provide an apparatus for measuring impurity concentration distribution in a semiconductor crystal having an optical system with a high degree of freedom.
第１図は従来技術におけ７） ＧａＡｇ 結晶中のＣ
ｒ不純物濃度分布測定装置の概略構成図、第２図は本発
明における上記測定装置の概略構成図、第３図はＩｎＰ
レーザーダイオード外観を示す斜視図である。
１・・・タングステンランプ、２・・・分光器、３・・
・試料（ウェハー）、４．１４・・・集光レンズ、５・
・・ピンホール、６・・・光検知器、７・・・増幅器、
８・・・演算回路、
９・・・Ｘ−Ｙレフーダ、１０・・・光チヨツパ−，１
２・・・移動ステージ、 ２１・・・ＩｎＰ レーザ
ーダイオード、３１・・・リード線、３２・・・ステム
、３３・・・照射孔特許出願人 富士通株式会社
第２図Figure 1 shows the conventional technology 7) C in GaAg crystal.
2 is a schematic diagram of the r-impurity concentration distribution measuring device, FIG. 2 is a schematic diagram of the measuring device of the present invention, and FIG. 3 is an InP
FIG. 2 is a perspective view showing the appearance of a laser diode. 1...Tungsten lamp, 2...Spectrometer, 3...
・Sample (wafer), 4.14...Condensing lens, 5.
...Pinhole, 6...Photodetector, 7...Amplifier,
8... Arithmetic circuit, 9... X-Y refuder, 10... Optical chopper, 1
2...Moving stage, 21...InP laser diode, 31...Lead wire, 32...Stem, 33...Irradiation hole Patent applicant Fujitsu Limited Figure 2
Claims (2)
測定する製電において、光源としてインジウム燐（Ｉｎ
Ｐ ）レーザーダイオードと集光レンズとを用い、当該
光源によりウェハを照射し、当該ウェハ透過光を電気的
装置ｌｖｃより検出、記録することを特徴とする半導体
結晶中の不純物嬢度測定装置。(1) Indium phosphide (In
P) An apparatus for measuring impurity levels in semiconductor crystals, which uses a laser diode and a condensing lens, irradiates a wafer with the light source, and detects and records the light transmitted through the wafer by an electric device lvc.
ァイバーとを組合わせた光学系を用いることを特徴とす
る特許請求の範囲第１項記載の半導体中の不純物織度測
定装置。(2) An apparatus for measuring impurity texture in a semiconductor according to claim 1, characterized in that an optical system combining an InP laser diode and an optical fiber is used as a light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15102681A JPS5852547A (en) | 1981-09-24 | 1981-09-24 | Measuring device for concentration distribution of impurities in semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15102681A JPS5852547A (en) | 1981-09-24 | 1981-09-24 | Measuring device for concentration distribution of impurities in semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5852547A true JPS5852547A (en) | 1983-03-28 |
Family
ID=15509673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15102681A Pending JPS5852547A (en) | 1981-09-24 | 1981-09-24 | Measuring device for concentration distribution of impurities in semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5852547A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62133027A (en) * | 1985-12-05 | 1987-06-16 | Honda Motor Co Ltd | Manufacture of sintered copper alloy having self lubricating property, material sheet and powder for sintered copper alloy |
| JPS62146994A (en) * | 1985-12-19 | 1987-06-30 | Honda Motor Co Ltd | Sliding member |
| JPS62146228A (en) * | 1985-12-19 | 1987-06-30 | Honda Motor Co Ltd | Manufacture of self lubricating sintered copper alloy |
| JPH01108304A (en) * | 1987-10-19 | 1989-04-25 | Oiles Ind Co Ltd | Production of sintered sliding member consisting of double layers |
-
1981
- 1981-09-24 JP JP15102681A patent/JPS5852547A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62133027A (en) * | 1985-12-05 | 1987-06-16 | Honda Motor Co Ltd | Manufacture of sintered copper alloy having self lubricating property, material sheet and powder for sintered copper alloy |
| JPS62146994A (en) * | 1985-12-19 | 1987-06-30 | Honda Motor Co Ltd | Sliding member |
| JPS62146228A (en) * | 1985-12-19 | 1987-06-30 | Honda Motor Co Ltd | Manufacture of self lubricating sintered copper alloy |
| JPH01108304A (en) * | 1987-10-19 | 1989-04-25 | Oiles Ind Co Ltd | Production of sintered sliding member consisting of double layers |
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