JPS585108U - Reference voltage generation circuit - Google Patents

Reference voltage generation circuit

Info

Publication number
JPS585108U
JPS585108U JP9756881U JP9756881U JPS585108U JP S585108 U JPS585108 U JP S585108U JP 9756881 U JP9756881 U JP 9756881U JP 9756881 U JP9756881 U JP 9756881U JP S585108 U JPS585108 U JP S585108U
Authority
JP
Japan
Prior art keywords
reference voltage
generation circuit
voltage generation
igfets
threshold potentials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9756881U
Other languages
Japanese (ja)
Inventor
名野　隆夫
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP9756881U priority Critical patent/JPS585108U/en
Publication of JPS585108U publication Critical patent/JPS585108U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図乃至第３図は本考案の回路を説明する回路図であ
る。 主な図番の説明、Ｒは負荷抵抗、ＴＩ、Ｔ２はスレッシ
ョルド電位を異ならしめたＩＧＦＥＴである。1 to 3 are circuit diagrams illustrating the circuit of the present invention. Explanation of main figure numbers: R is a load resistance, TI and T2 are IGFETs with different threshold potentials.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] スレッショルド電位の異なる絶縁ゲート型電界効果半導
体装置（以下ＩＣＦＥＴという）を直列に接続し、該Ｉ
ＧＦＥＴのゲート電極を同電位にバイアスして同一電流
を供給し、前記ＩＧＦＥＴの接続点より両ＩＧＦＥＴの
スレッショルド電位の差電位を取り出すことを特徴とす
る基準電圧発生回路。Insulated gate field effect semiconductor devices (hereinafter referred to as ICFETs) with different threshold potentials are connected in series, and
A reference voltage generation circuit characterized in that gate electrodes of the GFETs are biased to the same potential to supply the same current, and a potential difference between threshold potentials of both IGFETs is extracted from a connection point of the IGFETs.
JP9756881U 1981-06-29 1981-06-29 Reference voltage generation circuit Pending JPS585108U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9756881U JPS585108U (en) 1981-06-29 1981-06-29 Reference voltage generation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9756881U JPS585108U (en) 1981-06-29 1981-06-29 Reference voltage generation circuit

Publications (1)

Publication Number Publication Date
JPS585108U true JPS585108U (en) 1983-01-13

Family

ID=29892366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9756881U Pending JPS585108U (en) 1981-06-29 1981-06-29 Reference voltage generation circuit

Country Status (1)

Country Link
JP (1) JPS585108U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05250050A (en) * 1991-12-17 1993-09-28 Internatl Business Mach Corp <Ibm> Reference voltage generating circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05250050A (en) * 1991-12-17 1993-09-28 Internatl Business Mach Corp <Ibm> Reference voltage generating circuit

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