JPS5849696A - リチウムタンタレ−ト単結晶の単一分域化方法 - Google Patents

リチウムタンタレ−ト単結晶の単一分域化方法

Info

Publication number
JPS5849696A
JPS5849696A JP56147012A JP14701281A JPS5849696A JP S5849696 A JPS5849696 A JP S5849696A JP 56147012 A JP56147012 A JP 56147012A JP 14701281 A JP14701281 A JP 14701281A JP S5849696 A JPS5849696 A JP S5849696A
Authority
JP
Japan
Prior art keywords
single crystal
lithium tantalate
temperature
crystal
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56147012A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6234718B2 (en, 2012
Inventor
Kenji Enokida
榎田　憲治
Masao Tsunoda
角田　柾雄
Mitsunobu Otani
大谷　光伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56147012A priority Critical patent/JPS5849696A/ja
Publication of JPS5849696A publication Critical patent/JPS5849696A/ja
Publication of JPS6234718B2 publication Critical patent/JPS6234718B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP56147012A 1981-09-19 1981-09-19 リチウムタンタレ−ト単結晶の単一分域化方法 Granted JPS5849696A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56147012A JPS5849696A (ja) 1981-09-19 1981-09-19 リチウムタンタレ−ト単結晶の単一分域化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56147012A JPS5849696A (ja) 1981-09-19 1981-09-19 リチウムタンタレ−ト単結晶の単一分域化方法

Publications (2)

Publication Number Publication Date
JPS5849696A true JPS5849696A (ja) 1983-03-23
JPS6234718B2 JPS6234718B2 (en, 2012) 1987-07-28

Family

ID=15420548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56147012A Granted JPS5849696A (ja) 1981-09-19 1981-09-19 リチウムタンタレ−ト単結晶の単一分域化方法

Country Status (1)

Country Link
JP (1) JPS5849696A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0168628U (en, 2012) * 1987-10-27 1989-05-02

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364699A (en) * 1976-11-22 1978-06-09 Toshiba Corp Extending method for single orientation zone of single crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364699A (en) * 1976-11-22 1978-06-09 Toshiba Corp Extending method for single orientation zone of single crystal

Also Published As

Publication number Publication date
JPS6234718B2 (en, 2012) 1987-07-28

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