JPS5849642A - Glass for electronic device - Google Patents

Abstract

PURPOSE:To provide the titled glass having low surface leak current, and excellent energy beam resistance and uniformity, and composed mainly of SiO2, B2O3, PbO and ZrO2, and containing CaO, MgO, SrO, BaO, etc. and a clarifying agent at specific weight ratios. CONSTITUTION:The glass of the present invention is composed mainly of 25- 70(wt)% SiO2, 10-55% B2O3, 10-40% PbO and 1-10% ZrO2, and contains 1-8% RO (R is Ca, Mg, Sr or Ba) and 0.1-1% clarifying agent (e.g. As2O3, Sb2O3, etc.). The surface resistance of the glass is 10<12>-10<13>OMEGA, which is considerably higher than that of the ordinary soda-lime glass, i.e. 10<10>-10<11>OMEGA. Since the glass keeps high strength after irradiation with a laser beam in contrast with ordinary sode-lime glass which is destroyed by the radiation of 12W-CW Ar laser, it can be suitably used as a substrate for the integration of semiconductor elements (all in wt%).

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a glass for electronic devices useful for use as a substrate on which semiconductor elements are integrated.

In LCD televisions, etc., which have been attracting attention recently, a glass substrate is used as the drive circuit board, and in order to arrange transistors on it to form the entire drive circuit, the glass substrate is unnecessary in order to reduce surface leakage current 17I'L. Must be made of alkali glass.

Furthermore, when making a transistor using an amorphous or polycrystalline semiconductor material deposited on a glass substrate, the semiconductor material on the substrate is heated or exposed to energy beams (laser beams) in order to increase the crystal grain size of the semiconductor material. It is safe to anneal using a 2-electron beam) or the like. At this time, if the side heat, side beam strength, and mechanical strength of the glass are insufficient, the glass substrate will be destroyed. Therefore, it is impossible to use ordinary soda lime glass as a glass substrate on which such semiconductor elements are integrated. On the other hand, quartz glass is heat resistant.

Although it lags behind in terms of energy beam resistance, it has the disadvantages of high cost and lack of homogeneity due to many bubbles and striae. In view of the above points, the present invention has been developed to reduce the surface leakage current. The object of the present invention is to provide a glass for electronic devices which has low heat resistance and energy beam resistance, and has good homogeneity.

The glass material according to the present invention is 5iO225-70wt%
1BaO310-55wt%, PbO10-40wt%
, ZrO21~10 wt% k R as main component,
0(R='Ca, , Mg, Sr or Ba
) to maintain homogeneity, AS20. ,
It is characterized by containing 0.1 to 1 wt% of Kiyose agents such as 5b2o3. 5i02. B20B and PbO form a glass network, and the others are network modifying ions, while ZrO2 and B2O3 improve energy beam resistance. RO(R=Ca.

Mg, Sr, Ba) stabilize the glass and lower the melting temperature. Also, 8102. ZrO2 lowers the surface resistance.

Here, the reason for limiting the composition is as follows. 81
If 02 is less than 25 wt %, it will lack stability and homogeneity will be lost, and if it is more than 70 wt %, the melting temperature of the bath will become high, causing a national problem in production. When BaO3 is less than 10 wt%, heat resistance and energy beam resistance become insufficient, and 55 w
If it exceeds t%, the melting temperature will be lowered, but phase separation will occur easily, resulting in a lack of homogeneity.Although PbO has the effect of lowering the bath melting temperature, below 10wt%, this effect will be small, and above 40wt%, it will tend to devitrify. arise. ZrO2 lowers the resistance and improves energy beam resistance, but its effect is not observed when it is less than 1 wt%, and devitrification occurs when it is more than 10 wt%. R.O.
contributes to stabilizing the glass, but below 1 wt%, its effect is small (over 8 wt%, devitrification occurs.
Below wtφ, the effect is small, and below 1 wt%, the valence of the clarifying agent tends toward oxidation, so there is no foam-cutting effect.

Next, the effects of this invention will be explained in detail with reference to examples.

Glass of the above composition is melted at about 1100-1300°C. These batch compositions were boiled in an aluminum crucible, a rod with a diameter of 3 ttan was drawn, and while the rod was heated to 300° C., a 12 W-CWAr laser was scanned at a scanning speed of 12 c1y'sec.

After irradiation with a spot size of 100 μm, the total strength of the glass rod was measured. A plate of glass melted in a bath with a thickness of 1 mm
The surface resistance was measured after polishing. The results are shown in the table below. Samples (1) to (5) have slightly different compositions.

5- The surface resistance of ordinary soda lime glass is 1 x 1010~1
×lO0, whereas samples (i) to (5) are about 10
The surface resistance of the glass of this example is quite high, being 12-10 Ω. Ordinary soda lime glass has a strength of 7 to 10 klu + 2, which is 12 W - CWk.
In contrast to this, which is destroyed by laser irradiation, the above example shows great strength even after laser irradiation. Regarding the homogeneity of these glasses, there were very few bubbles, lI's, etc. observed with the naked eye, and no non-uniformity that would be particularly harmful for practical use was observed. In fact, using a glass substrate with the composition described above, a transistor with a chirality group was fabricated by graph epitaxial growth, and it showed the desired characteristics without any problems.

In addition, the glass according to the present invention can be used only as a substrate for forming a semi-solid structure, for use in motherboards,
It goes without saying that it can be widely used in electronic devices such as isolation materials and window materials for solar cells.

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Claims (1)

[Claims] 510225-70wt%, B2O310-55w
t%. PbO10~40wt%, Zr021~10w
Let t'% be the generated component, RO (R = Ca, Mg,
A glass for electronic devices, characterized in that it contains 1 to 8 wt% of Sr'): or Ba)'i, a Kiyose agent, and O, l-1 wt.