JPS5849619A - Preparation of photoconductive cadmium sulfide - Google Patents
Preparation of photoconductive cadmium sulfideInfo
- Publication number
- JPS5849619A JPS5849619A JP14575181A JP14575181A JPS5849619A JP S5849619 A JPS5849619 A JP S5849619A JP 14575181 A JP14575181 A JP 14575181A JP 14575181 A JP14575181 A JP 14575181A JP S5849619 A JPS5849619 A JP S5849619A
- Authority
- JP
- Japan
- Prior art keywords
- cds
- particle
- sulfur
- precipitated
- cadmium sulfide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052980 cadmium sulfide Inorganic materials 0.000 title claims abstract description 25
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 title claims abstract description 5
- 239000002245 particle Substances 0.000 claims abstract description 14
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 8
- 239000011593 sulfur Substances 0.000 claims abstract description 8
- 239000012298 atmosphere Substances 0.000 claims abstract description 6
- 238000010304 firing Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000003638 chemical reducing agent Substances 0.000 abstract description 3
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical compound [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 abstract description 2
- 238000009499 grossing Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 abstract description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 abstract 2
- 238000001354 calcination Methods 0.000 abstract 2
- 238000005054 agglomeration Methods 0.000 abstract 1
- 230000002776 aggregation Effects 0.000 abstract 1
- 230000001376 precipitating effect Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000012190 activator Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 101100273751 Caenorhabditis elegans cdc-42 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000282693 Cercopithecidae Species 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910021205 NaH2PO2 Inorganic materials 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000002969 egg yolk Anatomy 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は、光導電性硫化カドミウムの製造法に関する。[Detailed description of the invention] The present invention relates to a method for producing photoconductive cadmium sulfide.
硫化カドミウム顔料の製造法としては、大別して湿式法
と乾式法の2つの方法がるり、工業的には主にCdSO
4,CdC42等の水溶液に硫化水素ガスを反応させる
湿式法が実施されている。電子写真用としては、生成し
たCdS粉体を更に融剤、賦活剤と共に焼成、あるいは
反応時に予め賦活剤をCdSと共に共沈させてから焼成
しCdS粉体を活性化してから利用されている。ところ
で、この様な(1)
湿式法で得られるCdS粒子は、沈澱条件にもよるが、
一般的に電子顕微鏡等で観察すると、表面は非常に凹凸
が激しく、著しい場合は突起状のものが多数存在してい
る。この様な状態でめると、粉体特性的には凝集性が強
く取扱いが困難となり、また樹脂に分散させた場合強い
チクソトロピーを示し、導電性基板上への塗布が困難と
なることがある。また電子写真特性的にも、凹凸が多い
と一般的に前履歴による感光体の光減衰特性の劣化が大
きくなる順向が見られる他、比表面積が大きくなり、環
境依存性、特に湿度特性が悪くなる等の問題を生じる。There are two main methods for producing cadmium sulfide pigments: wet and dry.Industrially, CdSO is mainly used.
4. A wet method has been implemented in which an aqueous solution of CdC42 or the like is reacted with hydrogen sulfide gas. For electrophotography, the produced CdS powder is further fired with a flux and an activator, or the activator is co-precipitated with CdS in advance during the reaction and then fired to activate the CdS powder before use. By the way, CdS particles obtained by the wet method (1) like this depend on the precipitation conditions, but
Generally, when observed with an electron microscope, etc., the surface is extremely uneven, and in some cases, there are many protrusions. When mixed in this state, the powder has strong cohesive properties, making it difficult to handle, and when dispersed in resin, it exhibits strong thixotropy, making it difficult to coat onto conductive substrates. . Furthermore, in terms of electrophotographic characteristics, when there are many irregularities, there is generally a tendency for the deterioration of the light attenuation characteristics of the photoreceptor due to the previous history to increase, and the specific surface area increases, resulting in a decrease in environmental dependence, especially humidity characteristics. This may cause problems such as deterioration.
そこで本発明においてに、この様な凹凸のないCdS粒
子の製造を目的とし、CdS粒子の凹凸表面に、いわゆ
る化学めっき法によシ、cd廿イオン全溶液中で化学的
に還元析出させて表面の凹凸を滑らかに整えた後、Cd
Sに対して0.05〜0.5チの硫黄雰囲気中で、40
0℃〜600Cで焼成し、最終的に表面の清らかなCd
S粉体を得ることを特徴とするものでおる。Therefore, in the present invention, with the aim of manufacturing CdS particles without such unevenness, the uneven surface of CdS particles is chemically reduced and precipitated in a total solution of CD ions by a so-called chemical plating method. After smoothing the unevenness of Cd
In a sulfur atmosphere of 0.05 to 0.5 h for S, 40
Firing at 0°C to 600°C, the final surface is pure Cd.
This method is characterized by obtaining S powder.
9 A
本処理全施すCdS粉体としては、粒子形状的には制約
はないが水溶液中で凝集していないことが好ましいので
、粒径1μ以上のものが好まし゛い。9 A There are no restrictions on the particle shape of the CdS powder to be subjected to this treatment, but it is preferable that it not aggregate in an aqueous solution, so it is preferably a particle size of 1 μm or more.
使用する還元剤としては次亜リン酸ナトリウム、ツメチ
ルアミノボラン(DMAB ) 、ヒドラノン等があり
、Cd の析出量は反応条件や還元剤の種類によって
も異なるが、表面の凹凸が滑らかになる程度で充分であ
り、そn以上の析出は避けた方が良い。Cd析出後の硫
黄雰囲気中での焼成は、硫黄の量が多すぎると焼成後C
dS粉体は非常に高抵抗となり、電子写真特性、特には
画質に悪影響を与えるのでCdS重量に対して0.05
%〜0.5%の範囲とする。Reducing agents used include sodium hypophosphite, dimethylaminoborane (DMAB), hydranone, etc. The amount of Cd precipitated varies depending on the reaction conditions and type of reducing agent, but it is sufficient to smooth out surface irregularities. is sufficient, and it is better to avoid precipitation of n or more. When firing in a sulfur atmosphere after Cd precipitation, if the amount of sulfur is too large, carbon
dS powder has a very high resistance and has a negative effect on electrophotographic properties, especially image quality, so 0.05% of the CdS weight is
% to 0.5%.
以下に具体的な実施例を示す。Specific examples are shown below.
実施例I
CuとCtで活性化された、数平均粒径3.0〜4.0
μを有するCd5100g’に予め水洗、脱イオン処理
全繰返し表面全洗浄した後、70℃で24hr乾燥し、
その後、以下の条件で化学めっきを行った0
CdC1210、!i’
NaH2PO2・H2O24g
H201000rnl
上記CdS粉体 100g
CHCOONa’3H20’ 10 g浴 温
80 ℃pH5,4
各々10分間(資料−1)、30分間(資料−2)、6
0分間(資料−3)攪拌ちせた後、洗浄。Example I Cu and Ct activated number average particle size 3.0-4.0
Cd5100g' with μ was washed with water and deionized in advance, and the entire surface was thoroughly washed, and then dried at 70°C for 24 hours.
After that, 0 CdC1210 was chemically plated under the following conditions. i' NaH2PO2・H2O24g H201000rnl Above CdS powder 100g CHCOONa'3H20' 10g Bath temperature
80℃pH5,4 10 minutes each (Document-1), 30 minutes (Document-2), 6
After stirring for 0 minutes (Document-3), wash.
脱イオン処理を行い70℃で24 hr乾燥した。その
後、体黄粉末全めっき後のCdS粉体に対して重量比で
0.2 %加え、充分に混合後、スリ合せフタ付石英製
ルツデに充てんし、450℃で60分間焼成した。室温
まで冷却後、洗液の電導匿が1,0μV/−以下となる
まで、水洗脱イオン処理を行い、70℃で24 hr乾
燥した。乾燥後、電子顕微鏡で観察したところ、CdS
粒子はいずれも丸みを帯び、表面がかなシ平滑となって
いることが認められた。It was deionized and dried at 70°C for 24 hours. Thereafter, 0.2% by weight was added to the CdS powder after the whole body yolk powder plating, and after thorough mixing, it was filled into a quartz tube with a slotted lid and fired at 450° C. for 60 minutes. After cooling to room temperature, washing with water and deionization was performed until the conductivity of the washing liquid became 1.0 μV/- or less, and drying was performed at 70° C. for 24 hours. After drying, observation with an electron microscope revealed that CdS
It was observed that all the particles were rounded and had a slightly smooth surface.
第1図(a)に本実施例のiPI、同(b)に資料−2
の処理後の顕微鏡写真(3500倍)を示す。Figure 1(a) shows the iPI of this example, and Figure 1(b) shows the document-2.
A micrograph (3500x) after treatment is shown.
こムらのCdS i塩化ビニルコ酢酸ビニル共重合体系
樹脂(商品名VMCf(: VCC製)をバインダーと
して、アルミニウム基板上に40μの膜厚で塗布し、乾
燥後更に上に厚さ25μのポリエステルフィルム(商品
名マイラー:ダイヤホイル製)全貼布し、後述の測定用
試料とした。Komu et al.'s CdS i vinyl chloride co-vinyl acetate copolymer resin (trade name: VMCf (manufactured by VCC) was used as a binder and coated on an aluminum substrate in a film thickness of 40 μm, and after drying, a polyester film with a thickness of 25 μm was further applied on top. (Product name: Mylar: manufactured by Diafoil) was applied to the entire surface and used as a sample for measurement as described below.
実施例2
実施例1と同じ組成の浴で30分間攪拌して化学めっき
を行った後、添加する硫黄の1it0.01%(資料−
4)、0.05%(資料−5)、0.1%(資料−6)
、0.5%(資料−7)、、1.0%(資料−8)と変
化させ、以下実施例1、と四様に焼成し、感光板化し後
述の測定用試料とした。Example 2 After chemical plating was performed by stirring for 30 minutes in a bath with the same composition as in Example 1, 1it0.01% of the sulfur added (material-
4), 0.05% (Document-5), 0.1% (Document-6)
, 0.5% (Data-7), and 1.0% (Data-8), and baked in four different ways as in Example 1 below, and formed into a photosensitive plate, which was used as a sample for measurement as described below.
J七*91+リ l
実施例1,2で用いたCdSi、そのままルッゲに充て
んし、450℃60分間焼成した後、実施例と同じ条件
で感光板化し、比較例5資料とした。J7*91+Li l The CdSi used in Examples 1 and 2 was directly filled into a Rugge, and after baking at 450°C for 60 minutes, it was made into a photosensitive plate under the same conditions as in the Examples, and used as a material for Comparative Example 5.
以上資料−1〜資料−8の8棟類について、それぞれ2
5℃、湿度40%、光照射下と25℃、湿[40%、暗
所中と25℃、湿度100%、光照射下の3糧の槙境下
に24 hr放装して、以下の測定全行い、効果全比較
した。測定装置は第2図に示す装置を用いて行った。For each of the 8 buildings listed above, Document-1 to Document-8, 2
The following conditions were exposed for 24 hr under 5℃, humidity 40%, light irradiation and 25℃, humidity 40%, in the dark and 25℃, 100% humidity, light irradiation. All measurements were performed and all effects were compared. The measurement was carried out using the apparatus shown in FIG.
即ち、感光板9の絶縁層面に透明′電極4tもつガラス
板3を押しつけた。透明電極4はリレースインテ5全介
して高圧直流電源6に接続される。That is, the glass plate 3 having the transparent electrode 4t was pressed against the insulating layer surface of the photosensitive plate 9. The transparent electrode 4 is connected to a high-voltage DC power source 6 through a relay integer 5.
測定はりレースイッテ5 全0.2秒間とじて高電圧(
Va)ffi印加し、02秒間放置(オーブン)後光を
0.2秒間照射しその時の電圧変化(、Vp)全感光板
と同電圧にろる金属板7と表面電位計8で測定した。尚
、Vpは光導電層に印加されている電圧である。Measuring beam race itte 5 High voltage (
Va) ffi was applied, the film was left for 02 seconds (in an oven), and then light was irradiated for 0.2 seconds, and the voltage change (, Vp) at that time was measured using a metal plate 7 and a surface electrometer 8, which were at the same voltage as the entire photosensitive plate. Note that Vp is the voltage applied to the photoconductive layer.
更に前露光としてへログン27グ1の白色光(Vp)全
感光板と同電圧にある金属板7と表面電位計8で測定し
た。尚、vpは光導電層に印加されている電圧である。Further, as a pre-exposure, measurement was carried out using a metal plate 7 and a surface electrometer 8 at the same voltage as the white light (Vp) full photosensitive plate of Helogung 27g 1. Note that vp is the voltage applied to the photoconductive layer.
・
更に前露光として〜・ログンラング1の白色元金シャッ
ター2により0.2sec照射し、0.2aea放置し
た後、Va印加し、Q、2sec放置後再び元を0.2
sec照射しその時の電圧変化Vp’に測定した。・Furthermore, as a pre-exposure ~ ・Irradiate for 0.2 seconds with the white metal shutter 2 of Rogunlang 1, leave it for 0.2 aea, apply Va, Q, leave it for 2 seconds, and then change the original again for 0.2 seconds.
sec irradiation, and the voltage change Vp' at that time was measured.
Va−2000Vとした場合のVpおよびvp′、Eた
Vai十2000Vとした場合のVp値を測定しVa
ニー2000■印加時のVp −yp/刀・ら光減衰の
速さを判断し、師i40%壊境下に保存した試料の、V
a=−2000Vとした場合のVpと湿度100%種境
下に保存した試料の、Va=−2000Vとした場合の
Vpとの比から湿度特性全評価した。Measure the Vp and vp' when Va is set to 2000V, and the Vp value when Vai is set to 2000V.
By determining the speed of optical attenuation when applying Knee 2000 ■, V
The humidity characteristics were completely evaluated from the ratio of Vp when a=-2000V and Vp when Va=-2000V of the sample stored under a 100% humidity environment.
以下に粕釆全示す。The entire lees pot is shown below.
Vp−yp/の差が、実施例は比較例に比べて小さく、
光減、艮の速さが速いこと金示している。また明所放置
試料と暗所放置試料とのVp −yp/の差金比較する
と実施例の方がかなシ小さく、保存状態が違っていても
形成さnる画像のコントラストにほとんど差が出す、画
像形成の安定性に優れていることを示している。更に、
明所放置試料のVpと湿度100%猿境下放置試料のV
p ’fc比較すると、やはり実施例の方が湿度による
劣化が少なく、環境依存性が小さいことがわかる。The difference in Vp-yp/ is smaller in the example than in the comparative example,
The light fading indicates that the speed of the fly is fast. Also, when comparing the difference in Vp -yp/ between samples left in the light and samples left in the dark, the difference in Vp -yp/ in the example is slightly smaller, and even if the storage conditions are different, there is almost no difference in the contrast of the images formed. This shows that the formation stability is excellent. Furthermore,
Vp of a sample left in the light and Vp of a sample left in a monkey environment with 100% humidity
Comparing p'fc, it can be seen that the example shows less deterioration due to humidity and less environmental dependence.
第1図(t、) (b)は実施例1における原料CdS
及び処理後の資料−2の顕微鏡写真(X3500)、M
2図は感光体の感光特性を測定するための装置it、を
示す図である。
4・・・透明電極 5・・・リレースイッチ6・
・・高圧直流電源 7・・・金属板8・・・表面電位
計 9・・・感光板第1図
(a)
X、5500
(b)
−2・。
・′べ、 、・、”、 ′・Figure 1 (t,) (b) shows the raw material CdS in Example 1.
and micrograph of Material-2 after treatment (X3500), M
FIG. 2 is a diagram showing an apparatus it for measuring the photosensitive characteristics of a photoreceptor. 4...Transparent electrode 5...Relay switch 6.
...High voltage DC power supply 7...Metal plate 8...Surface electrometer 9...Photosensitive plate Fig. 1 (a) X, 5500 (b) -2.・′be, ,・,”, ′・
Claims (1)
金溶液中で化学的に還元析出させて表面を滑らかに整え
た後、CdSに対して0.05%〜0.5チの硫黄雰囲
気中で焼成することを特徴とする光導電性硫化カドミウ
ムの製造方法。CdS particles, which have many irregularities on the surface, are chemically reduced and precipitated in a cd''+ ion gold solution to make the surface smooth, and then treated with a sulfur atmosphere of 0.05% to 0.5% relative to CdS. A method for producing photoconductive cadmium sulfide, which comprises firing in a medium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14575181A JPS5849619A (en) | 1981-09-16 | 1981-09-16 | Preparation of photoconductive cadmium sulfide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14575181A JPS5849619A (en) | 1981-09-16 | 1981-09-16 | Preparation of photoconductive cadmium sulfide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5849619A true JPS5849619A (en) | 1983-03-23 |
Family
ID=15392307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14575181A Pending JPS5849619A (en) | 1981-09-16 | 1981-09-16 | Preparation of photoconductive cadmium sulfide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5849619A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59232353A (en) * | 1983-06-02 | 1984-12-27 | ゼロツクス・コ−ポレ−シヨン | Correction of electric nature for selenium and selenium alloy |
-
1981
- 1981-09-16 JP JP14575181A patent/JPS5849619A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59232353A (en) * | 1983-06-02 | 1984-12-27 | ゼロツクス・コ−ポレ−シヨン | Correction of electric nature for selenium and selenium alloy |
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