JPS5849619A - Preparation of photoconductive cadmium sulfide - Google Patents

Preparation of photoconductive cadmium sulfide

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Publication number
JPS5849619A
JPS5849619A JP14575181A JP14575181A JPS5849619A JP S5849619 A JPS5849619 A JP S5849619A JP 14575181 A JP14575181 A JP 14575181A JP 14575181 A JP14575181 A JP 14575181A JP S5849619 A JPS5849619 A JP S5849619A
Authority
JP
Japan
Prior art keywords
cds
particle
sulfur
precipitated
cadmium sulfide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14575181A
Other languages
Japanese (ja)
Inventor
Fumio Sumino
文男 角野
Masabumi Hisamura
久村 正文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14575181A priority Critical patent/JPS5849619A/en
Publication of JPS5849619A publication Critical patent/JPS5849619A/en
Pending legal-status Critical Current

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  • Photoreceptors In Electrophotography (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

PURPOSE:To obtain photoconductive cadmium sulfide particle having smooth surface, by reducing and precipitating Cd<2+> in solution to the surface of Cd particle having rough surface thereby smoothing the surface, and calcining the particle in sulfur atmosphere. CONSTITUTION:Cd<2+> ions are chemically reduced in a solution and precipitated to the surface of a Cd particle having a number of protrusions and indents to make the surface smooth, and the particle is calcined in an atmosphere containing 0.05-0.5% sulfur based on the CdS. The CdS particle has preferably a diameter of >=1mu to prevent the agglomeration in water. The reducing agent is, e.g. sodium hypophosphite, dimethylaminoborane, hydrazine, etc. When the amount of sulfur in the atmosphere for the calcination of precipitated Cd is too high, the electrical resistance of the calcined CdS becomes extremely high to cause undesirable effect to the electrophotographic characteristics of the CdS, especially the quality of the image, and accordingly, the amount is to be selected within the range between 0.05 and 0.5% based on the weight of CdS.

Description

【発明の詳細な説明】 本発明は、光導電性硫化カドミウムの製造法に関する。[Detailed description of the invention] The present invention relates to a method for producing photoconductive cadmium sulfide.

硫化カドミウム顔料の製造法としては、大別して湿式法
と乾式法の2つの方法がるり、工業的には主にCdSO
4,CdC42等の水溶液に硫化水素ガスを反応させる
湿式法が実施されている。電子写真用としては、生成し
たCdS粉体を更に融剤、賦活剤と共に焼成、あるいは
反応時に予め賦活剤をCdSと共に共沈させてから焼成
しCdS粉体を活性化してから利用されている。ところ
で、この様な(1) 湿式法で得られるCdS粒子は、沈澱条件にもよるが、
一般的に電子顕微鏡等で観察すると、表面は非常に凹凸
が激しく、著しい場合は突起状のものが多数存在してい
る。この様な状態でめると、粉体特性的には凝集性が強
く取扱いが困難となり、また樹脂に分散させた場合強い
チクソトロピーを示し、導電性基板上への塗布が困難と
なることがある。また電子写真特性的にも、凹凸が多い
と一般的に前履歴による感光体の光減衰特性の劣化が大
きくなる順向が見られる他、比表面積が大きくなり、環
境依存性、特に湿度特性が悪くなる等の問題を生じる。
There are two main methods for producing cadmium sulfide pigments: wet and dry.Industrially, CdSO is mainly used.
4. A wet method has been implemented in which an aqueous solution of CdC42 or the like is reacted with hydrogen sulfide gas. For electrophotography, the produced CdS powder is further fired with a flux and an activator, or the activator is co-precipitated with CdS in advance during the reaction and then fired to activate the CdS powder before use. By the way, CdS particles obtained by the wet method (1) like this depend on the precipitation conditions, but
Generally, when observed with an electron microscope, etc., the surface is extremely uneven, and in some cases, there are many protrusions. When mixed in this state, the powder has strong cohesive properties, making it difficult to handle, and when dispersed in resin, it exhibits strong thixotropy, making it difficult to coat onto conductive substrates. . Furthermore, in terms of electrophotographic characteristics, when there are many irregularities, there is generally a tendency for the deterioration of the light attenuation characteristics of the photoreceptor due to the previous history to increase, and the specific surface area increases, resulting in a decrease in environmental dependence, especially humidity characteristics. This may cause problems such as deterioration.

そこで本発明においてに、この様な凹凸のないCdS粒
子の製造を目的とし、CdS粒子の凹凸表面に、いわゆ
る化学めっき法によシ、cd廿イオン全溶液中で化学的
に還元析出させて表面の凹凸を滑らかに整えた後、Cd
Sに対して0.05〜0.5チの硫黄雰囲気中で、40
0℃〜600Cで焼成し、最終的に表面の清らかなCd
S粉体を得ることを特徴とするものでおる。
Therefore, in the present invention, with the aim of manufacturing CdS particles without such unevenness, the uneven surface of CdS particles is chemically reduced and precipitated in a total solution of CD ions by a so-called chemical plating method. After smoothing the unevenness of Cd
In a sulfur atmosphere of 0.05 to 0.5 h for S, 40
Firing at 0°C to 600°C, the final surface is pure Cd.
This method is characterized by obtaining S powder.

 9 A 本処理全施すCdS粉体としては、粒子形状的には制約
はないが水溶液中で凝集していないことが好ましいので
、粒径1μ以上のものが好まし゛い。
9 A There are no restrictions on the particle shape of the CdS powder to be subjected to this treatment, but it is preferable that it not aggregate in an aqueous solution, so it is preferably a particle size of 1 μm or more.

使用する還元剤としては次亜リン酸ナトリウム、ツメチ
ルアミノボラン(DMAB ) 、ヒドラノン等があり
、Cd  の析出量は反応条件や還元剤の種類によって
も異なるが、表面の凹凸が滑らかになる程度で充分であ
り、そn以上の析出は避けた方が良い。Cd析出後の硫
黄雰囲気中での焼成は、硫黄の量が多すぎると焼成後C
dS粉体は非常に高抵抗となり、電子写真特性、特には
画質に悪影響を与えるのでCdS重量に対して0.05
%〜0.5%の範囲とする。
Reducing agents used include sodium hypophosphite, dimethylaminoborane (DMAB), hydranone, etc. The amount of Cd precipitated varies depending on the reaction conditions and type of reducing agent, but it is sufficient to smooth out surface irregularities. is sufficient, and it is better to avoid precipitation of n or more. When firing in a sulfur atmosphere after Cd precipitation, if the amount of sulfur is too large, carbon
dS powder has a very high resistance and has a negative effect on electrophotographic properties, especially image quality, so 0.05% of the CdS weight is
% to 0.5%.

以下に具体的な実施例を示す。Specific examples are shown below.

実施例I CuとCtで活性化された、数平均粒径3.0〜4.0
μを有するCd5100g’に予め水洗、脱イオン処理
全繰返し表面全洗浄した後、70℃で24hr乾燥し、
その後、以下の条件で化学めっきを行った0 CdC1210、!i’ NaH2PO2・H2O24g H201000rnl 上記CdS粉体    100g CHCOONa’3H20’ 10 g浴  温   
          80 ℃pH5,4 各々10分間(資料−1)、30分間(資料−2)、6
0分間(資料−3)攪拌ちせた後、洗浄。
Example I Cu and Ct activated number average particle size 3.0-4.0
Cd5100g' with μ was washed with water and deionized in advance, and the entire surface was thoroughly washed, and then dried at 70°C for 24 hours.
After that, 0 CdC1210 was chemically plated under the following conditions. i' NaH2PO2・H2O24g H201000rnl Above CdS powder 100g CHCOONa'3H20' 10g Bath temperature
80℃pH5,4 10 minutes each (Document-1), 30 minutes (Document-2), 6
After stirring for 0 minutes (Document-3), wash.

脱イオン処理を行い70℃で24 hr乾燥した。その
後、体黄粉末全めっき後のCdS粉体に対して重量比で
0.2 %加え、充分に混合後、スリ合せフタ付石英製
ルツデに充てんし、450℃で60分間焼成した。室温
まで冷却後、洗液の電導匿が1,0μV/−以下となる
まで、水洗脱イオン処理を行い、70℃で24 hr乾
燥した。乾燥後、電子顕微鏡で観察したところ、CdS
粒子はいずれも丸みを帯び、表面がかなシ平滑となって
いることが認められた。
It was deionized and dried at 70°C for 24 hours. Thereafter, 0.2% by weight was added to the CdS powder after the whole body yolk powder plating, and after thorough mixing, it was filled into a quartz tube with a slotted lid and fired at 450° C. for 60 minutes. After cooling to room temperature, washing with water and deionization was performed until the conductivity of the washing liquid became 1.0 μV/- or less, and drying was performed at 70° C. for 24 hours. After drying, observation with an electron microscope revealed that CdS
It was observed that all the particles were rounded and had a slightly smooth surface.

第1図(a)に本実施例のiPI、同(b)に資料−2
の処理後の顕微鏡写真(3500倍)を示す。
Figure 1(a) shows the iPI of this example, and Figure 1(b) shows the document-2.
A micrograph (3500x) after treatment is shown.

こムらのCdS i塩化ビニルコ酢酸ビニル共重合体系
樹脂(商品名VMCf(: VCC製)をバインダーと
して、アルミニウム基板上に40μの膜厚で塗布し、乾
燥後更に上に厚さ25μのポリエステルフィルム(商品
名マイラー:ダイヤホイル製)全貼布し、後述の測定用
試料とした。
Komu et al.'s CdS i vinyl chloride co-vinyl acetate copolymer resin (trade name: VMCf (manufactured by VCC) was used as a binder and coated on an aluminum substrate in a film thickness of 40 μm, and after drying, a polyester film with a thickness of 25 μm was further applied on top. (Product name: Mylar: manufactured by Diafoil) was applied to the entire surface and used as a sample for measurement as described below.

実施例2 実施例1と同じ組成の浴で30分間攪拌して化学めっき
を行った後、添加する硫黄の1it0.01%(資料−
4)、0.05%(資料−5)、0.1%(資料−6)
、0.5%(資料−7)、、1.0%(資料−8)と変
化させ、以下実施例1、と四様に焼成し、感光板化し後
述の測定用試料とした。
Example 2 After chemical plating was performed by stirring for 30 minutes in a bath with the same composition as in Example 1, 1it0.01% of the sulfur added (material-
4), 0.05% (Document-5), 0.1% (Document-6)
, 0.5% (Data-7), and 1.0% (Data-8), and baked in four different ways as in Example 1 below, and formed into a photosensitive plate, which was used as a sample for measurement as described below.

J七*91+リ l 実施例1,2で用いたCdSi、そのままルッゲに充て
んし、450℃60分間焼成した後、実施例と同じ条件
で感光板化し、比較例5資料とした。
J7*91+Li l The CdSi used in Examples 1 and 2 was directly filled into a Rugge, and after baking at 450°C for 60 minutes, it was made into a photosensitive plate under the same conditions as in the Examples, and used as a material for Comparative Example 5.

以上資料−1〜資料−8の8棟類について、それぞれ2
5℃、湿度40%、光照射下と25℃、湿[40%、暗
所中と25℃、湿度100%、光照射下の3糧の槙境下
に24 hr放装して、以下の測定全行い、効果全比較
した。測定装置は第2図に示す装置を用いて行った。
For each of the 8 buildings listed above, Document-1 to Document-8, 2
The following conditions were exposed for 24 hr under 5℃, humidity 40%, light irradiation and 25℃, humidity 40%, in the dark and 25℃, 100% humidity, light irradiation. All measurements were performed and all effects were compared. The measurement was carried out using the apparatus shown in FIG.

即ち、感光板9の絶縁層面に透明′電極4tもつガラス
板3を押しつけた。透明電極4はリレースインテ5全介
して高圧直流電源6に接続される。
That is, the glass plate 3 having the transparent electrode 4t was pressed against the insulating layer surface of the photosensitive plate 9. The transparent electrode 4 is connected to a high-voltage DC power source 6 through a relay integer 5.

測定はりレースイッテ5 全0.2秒間とじて高電圧(
Va)ffi印加し、02秒間放置(オーブン)後光を
0.2秒間照射しその時の電圧変化(、Vp)全感光板
と同電圧にろる金属板7と表面電位計8で測定した。尚
、Vpは光導電層に印加されている電圧である。
Measuring beam race itte 5 High voltage (
Va) ffi was applied, the film was left for 02 seconds (in an oven), and then light was irradiated for 0.2 seconds, and the voltage change (, Vp) at that time was measured using a metal plate 7 and a surface electrometer 8, which were at the same voltage as the entire photosensitive plate. Note that Vp is the voltage applied to the photoconductive layer.

更に前露光としてへログン27グ1の白色光(Vp)全
感光板と同電圧にある金属板7と表面電位計8で測定し
た。尚、vpは光導電層に印加されている電圧である。
Further, as a pre-exposure, measurement was carried out using a metal plate 7 and a surface electrometer 8 at the same voltage as the white light (Vp) full photosensitive plate of Helogung 27g 1. Note that vp is the voltage applied to the photoconductive layer.

・ 更に前露光として〜・ログンラング1の白色元金シャッ
ター2により0.2sec照射し、0.2aea放置し
た後、Va印加し、Q、2sec放置後再び元を0.2
sec照射しその時の電圧変化Vp’に測定した。
・Furthermore, as a pre-exposure ~ ・Irradiate for 0.2 seconds with the white metal shutter 2 of Rogunlang 1, leave it for 0.2 aea, apply Va, Q, leave it for 2 seconds, and then change the original again for 0.2 seconds.
sec irradiation, and the voltage change Vp' at that time was measured.

Va−2000Vとした場合のVpおよびvp′、Eた
Vai十2000Vとした場合のVp値を測定しVa 
ニー2000■印加時のVp −yp/刀・ら光減衰の
速さを判断し、師i40%壊境下に保存した試料の、V
a=−2000Vとした場合のVpと湿度100%種境
下に保存した試料の、Va=−2000Vとした場合の
Vpとの比から湿度特性全評価した。
Measure the Vp and vp' when Va is set to 2000V, and the Vp value when Vai is set to 2000V.
By determining the speed of optical attenuation when applying Knee 2000 ■, V
The humidity characteristics were completely evaluated from the ratio of Vp when a=-2000V and Vp when Va=-2000V of the sample stored under a 100% humidity environment.

以下に粕釆全示す。The entire lees pot is shown below.

Vp−yp/の差が、実施例は比較例に比べて小さく、
光減、艮の速さが速いこと金示している。また明所放置
試料と暗所放置試料とのVp −yp/の差金比較する
と実施例の方がかなシ小さく、保存状態が違っていても
形成さnる画像のコントラストにほとんど差が出す、画
像形成の安定性に優れていることを示している。更に、
明所放置試料のVpと湿度100%猿境下放置試料のV
p ’fc比較すると、やはり実施例の方が湿度による
劣化が少なく、環境依存性が小さいことがわかる。
The difference in Vp-yp/ is smaller in the example than in the comparative example,
The light fading indicates that the speed of the fly is fast. Also, when comparing the difference in Vp -yp/ between samples left in the light and samples left in the dark, the difference in Vp -yp/ in the example is slightly smaller, and even if the storage conditions are different, there is almost no difference in the contrast of the images formed. This shows that the formation stability is excellent. Furthermore,
Vp of a sample left in the light and Vp of a sample left in a monkey environment with 100% humidity
Comparing p'fc, it can be seen that the example shows less deterioration due to humidity and less environmental dependence.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(t、) (b)は実施例1における原料CdS
及び処理後の資料−2の顕微鏡写真(X3500)、M
2図は感光体の感光特性を測定するための装置it、を
示す図である。 4・・・透明電極    5・・・リレースイッチ6・
・・高圧直流電源  7・・・金属板8・・・表面電位
計   9・・・感光板第1図 (a) X、5500 (b) −2・。 ・′べ、  、・、”、 ′・
Figure 1 (t,) (b) shows the raw material CdS in Example 1.
and micrograph of Material-2 after treatment (X3500), M
FIG. 2 is a diagram showing an apparatus it for measuring the photosensitive characteristics of a photoreceptor. 4...Transparent electrode 5...Relay switch 6.
...High voltage DC power supply 7...Metal plate 8...Surface electrometer 9...Photosensitive plate Fig. 1 (a) X, 5500 (b) -2.・′be, ,・,”, ′・

Claims (1)

【特許請求の範囲】[Claims] 表面に多くの凹凸を持つCdS粒子に、cd″+イオン
金溶液中で化学的に還元析出させて表面を滑らかに整え
た後、CdSに対して0.05%〜0.5チの硫黄雰囲
気中で焼成することを特徴とする光導電性硫化カドミウ
ムの製造方法。
CdS particles, which have many irregularities on the surface, are chemically reduced and precipitated in a cd''+ ion gold solution to make the surface smooth, and then treated with a sulfur atmosphere of 0.05% to 0.5% relative to CdS. A method for producing photoconductive cadmium sulfide, which comprises firing in a medium.
JP14575181A 1981-09-16 1981-09-16 Preparation of photoconductive cadmium sulfide Pending JPS5849619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14575181A JPS5849619A (en) 1981-09-16 1981-09-16 Preparation of photoconductive cadmium sulfide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14575181A JPS5849619A (en) 1981-09-16 1981-09-16 Preparation of photoconductive cadmium sulfide

Publications (1)

Publication Number Publication Date
JPS5849619A true JPS5849619A (en) 1983-03-23

Family

ID=15392307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14575181A Pending JPS5849619A (en) 1981-09-16 1981-09-16 Preparation of photoconductive cadmium sulfide

Country Status (1)

Country Link
JP (1) JPS5849619A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232353A (en) * 1983-06-02 1984-12-27 ゼロツクス・コ−ポレ−シヨン Correction of electric nature for selenium and selenium alloy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232353A (en) * 1983-06-02 1984-12-27 ゼロツクス・コ−ポレ−シヨン Correction of electric nature for selenium and selenium alloy

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