JPS5847825B2 - electronic microscope - Google Patents

electronic microscope

Info

Publication number
JPS5847825B2
JPS5847825B2 JP51102218A JP10221876A JPS5847825B2 JP S5847825 B2 JPS5847825 B2 JP S5847825B2 JP 51102218 A JP51102218 A JP 51102218A JP 10221876 A JP10221876 A JP 10221876A JP S5847825 B2 JPS5847825 B2 JP S5847825B2
Authority
JP
Japan
Prior art keywords
electron beam
electron
irradiation
aperture
object plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51102218A
Other languages
Japanese (ja)
Other versions
JPS5230154A (en
Inventor
カレル・デイーデリツク・ヴアン・デル・マスト
ヤン・バルト・レ・ポーレ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5230154A publication Critical patent/JPS5230154A/en
Publication of JPS5847825B2 publication Critical patent/JPS5847825B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1478Beam tilting means, i.e. for stereoscopy or for beam channelling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/21Means for adjusting the focus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261Details
    • H01J37/265Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Description

【発明の詳細な説明】 本発明は、照射電子ビームを発生する電子銃と、この電
子ビームを物体面に向ける対物レンズ装置と、電子ビー
ムを物体面から像面に向ける投影レンズ装置と、電子ビ
ームの開口を見かけ上拡大するための装置とを具える電
子顕微鏡に関するものである。
Detailed Description of the Invention The present invention provides an electron gun that generates an irradiation electron beam, an objective lens device that directs the electron beam toward an object surface, a projection lens device that directs the electron beam from the object surface to an image surface, and an electron gun that directs the electron beam toward an object surface. The present invention relates to an electron microscope comprising a device for apparently expanding the beam aperture.

著しく高い解偉力をもつ電子顕微鏡は、照射電子ビーム
の開口が比較的小さいことにより、像の焦点深度が非常
に深くなり、従って物体像が像面に正確に投影されるよ
うに調整することがきわめて困難となる欠点を有する。
Electron microscopes with extremely high resolving power have a relatively small aperture for the irradiating electron beam, resulting in a very deep image focal depth, which can therefore be adjusted so that the object image is precisely projected onto the image plane. It has the disadvantage of being extremely difficult.

英国特許明細書第687207号記載の電子顕微鏡にお
いて、比較的高い周波数をもった交番像をコンデンサー
レンズの焦平面に重ねることによって上述した欠点を除
去せんとする試みがなされた。
In the electron microscope described in British Patent Specification No. 687,207, an attempt was made to eliminate the above-mentioned drawbacks by superimposing an alternating image with a relatively high frequency on the focal plane of the condenser lens.

この方法においては、コンデンサーレンズの焦点が電子
顕微鏡の光軸方向に所定の軌跡に沿って移動することに
なる。
In this method, the focal point of the condenser lens moves along a predetermined trajectory in the optical axis direction of the electron microscope.

この結果、対物レンズの物体距離が変化することになり
、したがって照射電子ビームの開口が変化することにな
り,そのため最適焦点位置をより容易に調整できる。
As a result, the object distance of the objective lens changes, and therefore the aperture of the irradiated electron beam changes, so that the optimum focus position can be adjusted more easily.

しかし、このような解決法は球面収差の要因を増やし、
試料における電子ビームの照射強度選択の自由を制限し
、試料に照射される電子ビームの開口が実際に変化して
しまうことになる。
However, such a solution increases the contribution of spherical aberration and
This limits the freedom to select the intensity of electron beam irradiation on the sample, and actually changes the aperture of the electron beam irradiated onto the sample.

また、この方法では像の明暗が変化するため、物体偉を
記録するよな場合には適用が不可能である。
Furthermore, since this method changes the brightness and darkness of the image, it cannot be applied to cases such as recording the size of an object.

本発明の目的は上述した欠点が生ずることなく、電子ビ
ームの開口を見かけ上相当大きくすることができる電子
顕微鏡を提供せんとするものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide an electron microscope in which the aperture of the electron beam can be made considerably large in appearance without causing the above-mentioned drawbacks.

本発明は、照射電子ビームを発生するための放射源を有
する電子銃と、この照射電子ビームを物体面に向ける対
物レンズ装置と、電子ビームを物体面から像面に向けて
投影する投影レンズ装置と、電子ビームの開口を見かけ
上拡大するための装置とを具える電子顕微鏡において、
前記電子ビームの開口を見かけ上拡大するための装置が
、前記物体面に位置する点を中心として前記照射電子ビ
ームを傾けて前記点を頂点とする錐体の内部全体に亘っ
て電子ビームを等価的に形成する電源装置を含むビーム
偏向装置を具えることを特徴とするものである。
The present invention provides an electron gun having a radiation source for generating an irradiation electron beam, an objective lens device that directs the irradiation electron beam toward an object plane, and a projection lens device that projects the electron beam from the object plane toward an image plane. and a device for apparently expanding the aperture of the electron beam,
A device for apparently expanding the aperture of the electron beam tilts the irradiated electron beam around a point located on the object plane to equate the electron beam over the entire interior of a cone with the point as the apex. The present invention is characterized in that it includes a beam deflection device including a power supply device formed as a beam deflector.

本発明による電子顕微鏡においては、物体面における電
子ビームの横断面の大きさは常に一定に保たれるため、
見かけ上大きな開口にしたことによって電子ビーム電流
の大きさが変化することは全くなく、また照射電子ビー
ムの試料上の照射点が光軸方向に変位することもない。
In the electron microscope according to the present invention, the size of the cross section of the electron beam on the object plane is always kept constant;
Due to the apparently large aperture, the magnitude of the electron beam current does not change at all, and the irradiation point of the irradiated electron beam on the sample does not shift in the optical axis direction.

この光軸に対して垂直な横軸方向から見たときの照射ビ
ームの軌跡は、光軸に関して対称な任意の図形を描く。
The locus of the irradiation beam when viewed from the horizontal direction perpendicular to the optical axis draws an arbitrary figure that is symmetrical with respect to the optical axis.

この図形の形状と同様にこの図形の大きさも、電子ビー
ムの焦点が常に物体面に位置するようにすればほぼ任意
に選ぶことができる。
Similar to the shape of this figure, the size of this figure can be almost arbitrarily selected as long as the focus of the electron beam is always located on the object plane.

また,ビームの焦点ずれが生じないため、像面における
照射強度は一定であり、目的通り照射ビームの開口を見
かけ上増加させることにより,物体像の記録や研究が可
能である。
Furthermore, since no beam defocus occurs, the irradiation intensity at the image plane remains constant, and by increasing the apparent aperture of the irradiation beam as desired, it is possible to record and study object images.

好適実施例においては、対物レンズの光軸外を通過する
電子ビームに対し、ビームの横軸方向のずれの程度に応
じて、対物レンズ装置の励起に所定の修正を加えること
ができる。
In a preferred embodiment, for an electron beam passing off the optical axis of the objective lens, a predetermined modification can be made to the excitation of the objective lens system depending on the degree of deviation of the beam in the transverse direction.

次に図面を参照して本発明を詳細に説明する。Next, the present invention will be explained in detail with reference to the drawings.

図面は本発明電子顕微鏡の構成を示す線図であり、電子
銃1を具え、電子銃1は比較的高い電流密度を有する比
較的小さな横断面の電子ビームを発生する放射源2を具
えるものとするのが好適である。
The drawing is a diagram showing the configuration of an electron microscope of the present invention, which includes an electron gun 1, and the electron gun 1 includes a radiation source 2 that generates an electron beam with a relatively small cross section and a relatively high current density. It is preferable that

放射源2に対向して、アノード3と、電子ビームの進行
方向に見て順にビーム整列装置4、コンデンサーレンズ
装置5、ビーム偏向装置6、ポールシュ−8を具える対
物レンズ装置7、試料位置調整装置10を具える試料台
9、中間レンズ装置11、投影レンズ装置12を配置す
る。
Opposed to the radiation source 2, an anode 3, an objective lens device 7 comprising, in order as viewed in the traveling direction of the electron beam, a beam alignment device 4, a condenser lens device 5, a beam deflection device 6, a pole shoe 8, and a sample position adjustment. A sample stage 9 having a device 10, an intermediate lens device 11, and a projection lens device 12 are arranged.

電子顕微鏡の像空間13にカメラ14と螢光スクリーン
15を設け、窓16を通して螢光スクリーン15を観察
できるようにする。
A camera 14 and a fluorescent screen 15 are provided in the image space 13 of the electron microscope, and the fluorescent screen 15 can be observed through a window 16.

あらゆる電子光学素子を外匣1T内に設置し、外匣17
に他に窓16と、必要な電位を加えるための通路18と
、真空ダクト19を設け、真空ダクト19にはポンプ装
置への接続口20を設ける。
All electro-optical elements are installed in the outer case 1T, and the outer case 17
In addition, a window 16, a passage 18 for applying the necessary potential, and a vacuum duct 19 are provided, and the vacuum duct 19 is provided with a connection 20 to a pump device.

本発明においては、偏向装置6のための電源装置21を
、試料上の点22を中心として電子ビームを傾けること
ができるようなものとする。
In the present invention, the power supply device 21 for the deflection device 6 is designed to be able to tilt the electron beam around a point 22 on the sample.

電源装置をまた、印加すべき高電圧により制御するのが
好適である。
Preferably, the power supply is also controlled by the high voltage to be applied.

これを接続線23によって線図的に示す。This is illustrated diagrammatically by connecting line 23.

ビーム偏向装置6は普通2組の電磁コイルを具え、それ
によりビームを先づ既知の方法で光軸24から偏向させ
、次に光軸上の与えられた点・\再び偏向させることが
でき、その結果として電子ビームを傾けることができる
The beam deflection device 6 usually comprises two sets of electromagnetic coils, by means of which the beam can first be deflected in a known manner from the optical axis 24 and then again at a given point on the optical axis, As a result, the electron beam can be tilted.

光軸上の後者の点は、電子ビームが円錐体内部のあらゆ
る方向から投射される場合の収束点となる。
The latter point on the optical axis is the convergence point when the electron beam is projected from all directions inside the cone.

この円錐体の底面全体をビームによって走査する。The entire bottom surface of this cone is scanned by the beam.

その結果、時間を経て見ると電子ビームは円錐体の内部
を完全に満たすことになり、試料が弱い電子ビームの照
射によっては十分な画像情報を与えないようなものであ
っても、底面全体を走査することによって、十分な画像
情報を得ることができる。
As a result, over time, the electron beam completely fills the interior of the cone, covering the entire bottom surface even if the sample is such that weak electron beam irradiation would not provide sufficient image information. By scanning, sufficient image information can be obtained.

また、本発明では電子ビームの軌く図形は円錐体に限ら
れるものではなく、どんな図形をとることもできるが、
底面が円形或は矩形のような対称な図形となる円錐体や
角錐体とするのが好適である。
Furthermore, in the present invention, the shape of the electron beam is not limited to a cone, but can take any shape.
It is preferable to use a cone or a pyramid whose bottom surface has a symmetrical shape such as a circle or a rectangle.

特に底面を円形としてこれを走査する場合には、例えば
,わずかに位相のずれた2つの正弦波発生器を具える電
源装置を使用することによって、電子ビームにより円形
底面を螺旋状に走査するように電子ビームを偏向するこ
とができる。
Particularly when scanning a circular base, for example, a power supply with two slightly out-of-phase sine wave generators can be used to scan the circular base in a spiral manner with the electron beam. The electron beam can be deflected to

一方、底面を矩形としてこれを走査する場合には、テレ
ビジョンシステムにおいて走査ビームを偏向するのと同
じように、矩形底面をラスク状に走査するように電子ビ
ームを偏向させる電源装置を用いることができる。
On the other hand, when scanning a rectangular bottom surface, it is possible to use a power supply device that deflects the electron beam so as to scan the rectangular bottom surface in a rask-like manner, in the same way that a scanning beam is deflected in a television system. can.

偏向装置をこのように動作させると、ある時間に亘って
見た場合、円錐体の頂角によって規定される大きな開口
を有する1本の電子ビームによって試料は照射されるこ
とと等価になり、この開口は電子ビーム自体の開口の例
えば1000倍にも達する大きなものである。
Operating the deflection device in this way, when viewed over a period of time, is equivalent to irradiating the sample with a single electron beam with a large aperture defined by the apex angle of the cone; The aperture is as large as, for example, 1000 times the aperture of the electron beam itself.

このビーム偏向中には、電子ビーム電流の大きさは影響
を受けず、錐体の頂点に相当する試料上での照射点は軸
方向・\移動しない。
During this beam deflection, the magnitude of the electron beam current is not affected, and the irradiation point on the sample corresponding to the apex of the cone does not move in the axial direction.

前述した英国特許明細書第687207号記載の装置の
ように球面収差の補正も可能である。
It is also possible to correct spherical aberrations as in the device described in British Patent Specification No. 687207 mentioned above.

この目的のため、本発明電子顕微鏡においては、適当な
レンズ装置、この場合例えば対物レンズ装置を,電子ビ
ームの横軸方向の位置に依存して制御するだけでよい。
For this purpose, in the electron microscope according to the invention, it is only necessary to control a suitable lens arrangement, in this case for example an objective lens arrangement, as a function of the transverse position of the electron beam.

既知の電子顕微鏡においては、球面収差の補正をすると
電子ビームの径は広くなるが,本発明電子顕微鏡では電
子ビームの径は広くならず、単に対物レンズ装置の光軸
外を通過することになる。
In known electron microscopes, the diameter of the electron beam widens when spherical aberration is corrected, but in the electron microscope of the present invention, the diameter of the electron beam does not widen, but simply passes outside the optical axis of the objective lens device. .

しかしながら、この偏向によって生じる恐れのある球面
収集は、偏向されない電子ビームの光軸外の通路を基準
にして、完全に補正できる。
However, the possible spherical collection caused by this deflection can be completely corrected with reference to the off-axis path of the undeflected electron beam.

本発明電子顕微鏡の好適実施例では、偏向装置の電源装
置に調整可能な制御手段を付加して、光軸の外側の一個
の固定された点、或は連続する複数の固定された点から
電子ビームを照射することも可能である。
In a preferred embodiment of the electron microscope according to the invention, adjustable control means are added to the power supply of the deflection device so that the electrons can be supplied from a fixed point or from a series of fixed points outside the optical axis. It is also possible to irradiate with a beam.

このようにして、試験すべき物体の特性に応じて電子ビ
ームの照射態様を選定することができる。
In this way, the electron beam irradiation mode can be selected depending on the characteristics of the object to be tested.

以上説明したように本発明によれば、収差を発生するこ
となく焦点深度を浅くすることができるばかりでなく,
錐体の内部全体に亘って電子線を照射するようにしてい
るから、弱いエネルギー領域の電子線を用いても十分高
い輝度信号を得ることが可能になる。
As explained above, according to the present invention, not only can the depth of focus be made shallow without producing aberrations, but also
Since the entire interior of the cone is irradiated with the electron beam, it is possible to obtain a sufficiently high luminance signal even when using an electron beam in a weak energy range.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明電子顕微鏡の一例の構成を示す線図である
。 1・・・・・・電子銃,2・:・・・・放射源、6・・
・・・・ビーム偏向装置,9・・・・・・試料台、21
・・・・・・電源装置、22・・・・・・試料面におけ
る点。
The drawing is a diagram showing the configuration of an example of the electron microscope of the present invention. 1... Electron gun, 2... Radiation source, 6...
... Beam deflection device, 9 ... Sample stage, 21
...Power supply device, 22... Point on the sample surface.

Claims (1)

【特許請求の範囲】 1 照射電子ビームを発生するための放射源を有する電
子銃と,この照射電子ビームを物体面に向ける対物レン
ズ装置と、電子ビームを物体面から像面に向ける投影レ
ンズ装置と、電子ビームの開口を見かけ上拡大するため
の装置とを具える電子顕微鏡において、この開口を見か
け上拡大するための装置が,前記物体面上に位置する点
を中心として前記照射ビームを傾けて前記点を頂点とす
る錐体の内部全体に亘って偏向される電子ビームを等価
的に形成する電源装置を含むビーム偏向装置を具えるこ
とを特徴とする電子顕微鏡。 2 %許請求の範囲1記載の電子顕微鏡において、電子
ビームの横軸方向での偏向程度に応じて制御され,前記
ビーム偏向装置の後段の電子光学レンズに対して作用す
る収差補正装置を具えることを特徴とする電子顕微鏡。
[Claims] 1. An electron gun having a radiation source for generating an irradiation electron beam, an objective lens device that directs the irradiation electron beam toward an object plane, and a projection lens device that directs the electron beam from the object plane to an image plane. and a device for apparently enlarging the aperture of the electron beam, the device for apparently enlarging the aperture tilting the irradiation beam about a point located on the object plane. An electron microscope comprising a beam deflection device including a power supply device that equivalently forms an electron beam that is deflected throughout the entire interior of a cone having the point as its apex. 2% The electron microscope according to claim 1, further comprising an aberration correction device that is controlled according to the degree of deflection of the electron beam in the horizontal axis direction and that acts on an electron optical lens downstream of the beam deflection device. An electron microscope characterized by:
JP51102218A 1975-09-01 1976-08-28 electronic microscope Expired JPS5847825B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7510276A NL7510276A (en) 1975-09-01 1975-09-01 ELECTRONIC MICROSKOP.

Publications (2)

Publication Number Publication Date
JPS5230154A JPS5230154A (en) 1977-03-07
JPS5847825B2 true JPS5847825B2 (en) 1983-10-25

Family

ID=19824390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51102218A Expired JPS5847825B2 (en) 1975-09-01 1976-08-28 electronic microscope

Country Status (6)

Country Link
JP (1) JPS5847825B2 (en)
CA (1) CA1061477A (en)
DE (1) DE2637753A1 (en)
FR (1) FR2322452A1 (en)
GB (1) GB1563014A (en)
NL (1) NL7510276A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7804038A (en) * 1978-04-17 1979-10-19 Philips Nv ELECTRONIC MICROSKOP.
JPS55121259A (en) * 1979-03-14 1980-09-18 Hitachi Ltd Elelctron microscope
DE69939309D1 (en) 1999-03-31 2008-09-25 Advantest Corp Particle beam device for obliquely observing a sample

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081468A (en) * 1973-11-19 1975-07-02

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073655B (en) * 1958-11-29 1960-01-21 Fa. Carl Zeiss, Heidenheim/Brenz Method for changing the image brightness in particle beam devices, in particular in electron microscopes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081468A (en) * 1973-11-19 1975-07-02

Also Published As

Publication number Publication date
GB1563014A (en) 1980-03-19
DE2637753A1 (en) 1977-03-03
NL7510276A (en) 1977-03-03
FR2322452A1 (en) 1977-03-25
CA1061477A (en) 1979-08-28
JPS5230154A (en) 1977-03-07
FR2322452B1 (en) 1980-12-12

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