JPS58454U - magnetoelectric conversion element - Google Patents

magnetoelectric conversion element

Info

Publication number
JPS58454U
JPS58454U JP1981093441U JP9344181U JPS58454U JP S58454 U JPS58454 U JP S58454U JP 1981093441 U JP1981093441 U JP 1981093441U JP 9344181 U JP9344181 U JP 9344181U JP S58454 U JPS58454 U JP S58454U
Authority
JP
Japan
Prior art keywords
substrate
focusing
main surface
focusing substrate
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1981093441U
Other languages
Japanese (ja)
Inventor
淳一 須藤
Original Assignee
太陽誘電株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 太陽誘電株式会社 filed Critical 太陽誘電株式会社
Priority to JP1981093441U priority Critical patent/JPS58454U/en
Publication of JPS58454U publication Critical patent/JPS58454U/en
Pending legal-status Critical Current

Links

Landscapes

  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のホール素子を示す断面図、第2図、第3
図、第4図、第5図、及び第6図は本考案の実施例に係
わるホール素子を第9図のVI−VI線に対応させて製
造工程順に示す断面図、第7図は第3図のチップの底面
図、第8図は第5図の支持基板の平面図、第9図は第6
図のホール素子の平面図である。 尚図面に用いられている符号に於いて、1は磁気集束基
板、2はフェライト、3は保護絶縁層、4は支持基板、
5は感磁部、6a〜6dは引き出し電極、7a、7bは
リード部材、8はフェライト、9は保護絶縁層、10は
チップ、11a〜   11dは中継電極である。 第5図 −第6図
Figure 1 is a sectional view showing a conventional Hall element, Figures 2 and 3.
4, 5, and 6 are cross-sectional views showing the Hall element according to the embodiment of the present invention in the order of manufacturing steps, corresponding to the line VI-VI in FIG. 9, and FIG. Figure 8 is a bottom view of the chip in Figure 8, Figure 9 is a top view of the support substrate in Figure 5, Figure 9 is the
FIG. 3 is a plan view of the Hall element shown in the figure. In the symbols used in the drawings, 1 is a magnetic focusing substrate, 2 is a ferrite, 3 is a protective insulating layer, 4 is a support substrate,
5 is a magnetic sensing part, 6a to 6d are extraction electrodes, 7a and 7b are lead members, 8 is a ferrite, 9 is a protective insulating layer, 10 is a chip, and 11a to 11d are relay electrodes. Figures 5-6

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] (1)高透磁率磁性体から成る磁気集束基板と、前記集
束基板の一方の主面に形成された薄膜状磁、電変換感磁
部と、前記集束基板の前記一方の主面に形成され且つ前
記感磁部に接続された引き出し電極と、前記集束基板を
支持するために該集束基板の前記一方の主面よりも大き
な面積の対向面を有する支持基板と、前記集束基板の前
記一方の主面に対向する前記支持基板の面に形成され且
つ一前記引き出し電極に電気的及び機械的に結合された
中継電極と、前記中継電極に結合された金属リード部材
とから成る磁電変換素子。
(1) A magnetic focusing substrate made of a high magnetic permeability magnetic material, a thin film-like magnetic, electric conversion magnetically sensitive portion formed on one main surface of the focusing substrate, and a magnetic focusing substrate formed on the one main surface of the focusing substrate. and an extraction electrode connected to the magnetically sensitive part, a support substrate having a facing surface having a larger area than the one main surface of the focusing substrate for supporting the focusing substrate, and the one main surface of the focusing substrate. A magnetoelectric conversion element comprising a relay electrode formed on a surface of the support substrate opposite to the main surface and electrically and mechanically coupled to one of the extraction electrodes, and a metal lead member coupled to the relay electrode.
(2)前記感磁部は前記集束基板上に形成された保護絶
縁層と該絶縁層上に形成されたホール効果半導体薄膜と
から成る部分であり、前記引き出し電極は前記集束基板
上に形成された保護絶縁層と該絶縁層上に形成された導
電層とから成るものであり、前記中継電極は前記支持基
板上に保護絶縁層を介して設けられたスクリーン印刷に
よる導電層である実用新案登録請求の範囲第1項記載の
磁電変換素子。
(2) The magnetically sensitive part is a part consisting of a protective insulating layer formed on the focusing substrate and a Hall effect semiconductor thin film formed on the insulating layer, and the extraction electrode is formed on the focusing substrate. and a conductive layer formed on the insulating layer, and the relay electrode is a screen-printed conductive layer provided on the support substrate via the protective insulating layer. A magnetoelectric transducer according to claim 1.
JP1981093441U 1981-06-24 1981-06-24 magnetoelectric conversion element Pending JPS58454U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981093441U JPS58454U (en) 1981-06-24 1981-06-24 magnetoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981093441U JPS58454U (en) 1981-06-24 1981-06-24 magnetoelectric conversion element

Publications (1)

Publication Number Publication Date
JPS58454U true JPS58454U (en) 1983-01-05

Family

ID=29888405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981093441U Pending JPS58454U (en) 1981-06-24 1981-06-24 magnetoelectric conversion element

Country Status (1)

Country Link
JP (1) JPS58454U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183484A (en) * 1975-01-18 1976-07-22 Asahi Chemical Ind Jidenhenkansochi

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183484A (en) * 1975-01-18 1976-07-22 Asahi Chemical Ind Jidenhenkansochi

Similar Documents

Publication Publication Date Title
JPH01177408U (en)
JPS60179862U (en) oxygen concentration detector
JPS58454U (en) magnetoelectric conversion element
JPH0227757U (en)
JPS59125833U (en) semiconductor equipment
JPH01146559U (en)
JPS60101785U (en) hybrid integrated circuit device
JPS58160346U (en) humidity sensor
JPS59117102U (en) thick film varistor
JPS58159764U (en) magnetoelectric conversion element
JPS60174856U (en) polaro sensor
JPS58195864U (en) Capacitive humidity sensor
JPS59187776U (en) Thin layer magnetic field sensor
JPS60155195U (en) Structure of ceramic heater
JPS59125834U (en) semiconductor equipment
JPS58124965U (en) Multi-element photoelectric conversion device
JPS5997487U (en) magnetic sensor
JPS5863703U (en) chip resistor
JPS60931U (en) semiconductor equipment
JPS5978637U (en) Hybrid integrated circuit device
JPS5965478U (en) thermocompression connector
JPS60142469U (en) Electrode terminal extraction structure
JPS60153550U (en) Lateral transistor
JPS6411561U (en)
JPS59158393U (en) hybrid integrated circuit