JPS58454U - magnetoelectric conversion element - Google Patents
magnetoelectric conversion elementInfo
- Publication number
- JPS58454U JPS58454U JP1981093441U JP9344181U JPS58454U JP S58454 U JPS58454 U JP S58454U JP 1981093441 U JP1981093441 U JP 1981093441U JP 9344181 U JP9344181 U JP 9344181U JP S58454 U JPS58454 U JP S58454U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- focusing
- main surface
- focusing substrate
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims 3
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000605 extraction Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 230000005355 Hall effect Effects 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000035699 permeability Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来のホール素子を示す断面図、第2図、第3
図、第4図、第5図、及び第6図は本考案の実施例に係
わるホール素子を第9図のVI−VI線に対応させて製
造工程順に示す断面図、第7図は第3図のチップの底面
図、第8図は第5図の支持基板の平面図、第9図は第6
図のホール素子の平面図である。
尚図面に用いられている符号に於いて、1は磁気集束基
板、2はフェライト、3は保護絶縁層、4は支持基板、
5は感磁部、6a〜6dは引き出し電極、7a、7bは
リード部材、8はフェライト、9は保護絶縁層、10は
チップ、11a〜 11dは中継電極である。
第5図
−第6図Figure 1 is a sectional view showing a conventional Hall element, Figures 2 and 3.
4, 5, and 6 are cross-sectional views showing the Hall element according to the embodiment of the present invention in the order of manufacturing steps, corresponding to the line VI-VI in FIG. 9, and FIG. Figure 8 is a bottom view of the chip in Figure 8, Figure 9 is a top view of the support substrate in Figure 5, Figure 9 is the
FIG. 3 is a plan view of the Hall element shown in the figure. In the symbols used in the drawings, 1 is a magnetic focusing substrate, 2 is a ferrite, 3 is a protective insulating layer, 4 is a support substrate,
5 is a magnetic sensing part, 6a to 6d are extraction electrodes, 7a and 7b are lead members, 8 is a ferrite, 9 is a protective insulating layer, 10 is a chip, and 11a to 11d are relay electrodes. Figures 5-6
Claims (2)
束基板の一方の主面に形成された薄膜状磁、電変換感磁
部と、前記集束基板の前記一方の主面に形成され且つ前
記感磁部に接続された引き出し電極と、前記集束基板を
支持するために該集束基板の前記一方の主面よりも大き
な面積の対向面を有する支持基板と、前記集束基板の前
記一方の主面に対向する前記支持基板の面に形成され且
つ一前記引き出し電極に電気的及び機械的に結合された
中継電極と、前記中継電極に結合された金属リード部材
とから成る磁電変換素子。(1) A magnetic focusing substrate made of a high magnetic permeability magnetic material, a thin film-like magnetic, electric conversion magnetically sensitive portion formed on one main surface of the focusing substrate, and a magnetic focusing substrate formed on the one main surface of the focusing substrate. and an extraction electrode connected to the magnetically sensitive part, a support substrate having a facing surface having a larger area than the one main surface of the focusing substrate for supporting the focusing substrate, and the one main surface of the focusing substrate. A magnetoelectric conversion element comprising a relay electrode formed on a surface of the support substrate opposite to the main surface and electrically and mechanically coupled to one of the extraction electrodes, and a metal lead member coupled to the relay electrode.
縁層と該絶縁層上に形成されたホール効果半導体薄膜と
から成る部分であり、前記引き出し電極は前記集束基板
上に形成された保護絶縁層と該絶縁層上に形成された導
電層とから成るものであり、前記中継電極は前記支持基
板上に保護絶縁層を介して設けられたスクリーン印刷に
よる導電層である実用新案登録請求の範囲第1項記載の
磁電変換素子。(2) The magnetically sensitive part is a part consisting of a protective insulating layer formed on the focusing substrate and a Hall effect semiconductor thin film formed on the insulating layer, and the extraction electrode is formed on the focusing substrate. and a conductive layer formed on the insulating layer, and the relay electrode is a screen-printed conductive layer provided on the support substrate via the protective insulating layer. A magnetoelectric transducer according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1981093441U JPS58454U (en) | 1981-06-24 | 1981-06-24 | magnetoelectric conversion element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1981093441U JPS58454U (en) | 1981-06-24 | 1981-06-24 | magnetoelectric conversion element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58454U true JPS58454U (en) | 1983-01-05 |
Family
ID=29888405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1981093441U Pending JPS58454U (en) | 1981-06-24 | 1981-06-24 | magnetoelectric conversion element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58454U (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5183484A (en) * | 1975-01-18 | 1976-07-22 | Asahi Chemical Ind | Jidenhenkansochi |
-
1981
- 1981-06-24 JP JP1981093441U patent/JPS58454U/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5183484A (en) * | 1975-01-18 | 1976-07-22 | Asahi Chemical Ind | Jidenhenkansochi |
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