JPS5834973B2 - acoustic surface wave device - Google Patents

acoustic surface wave device

Info

Publication number
JPS5834973B2
JPS5834973B2 JP11185876A JP11185876A JPS5834973B2 JP S5834973 B2 JPS5834973 B2 JP S5834973B2 JP 11185876 A JP11185876 A JP 11185876A JP 11185876 A JP11185876 A JP 11185876A JP S5834973 B2 JPS5834973 B2 JP S5834973B2
Authority
JP
Japan
Prior art keywords
electrodes
electrode
wave device
split
idt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11185876A
Other languages
Japanese (ja)
Other versions
JPS5338241A (en
Inventor
剛 間
良彦 野呂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11185876A priority Critical patent/JPS5834973B2/en
Publication of JPS5338241A publication Critical patent/JPS5338241A/en
Publication of JPS5834973B2 publication Critical patent/JPS5834973B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14544Transducers of particular shape or position
    • H03H9/14552Transducers of particular shape or position comprising split fingers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02842Means for compensation or elimination of undesirable effects of reflections
    • H03H9/0285Means for compensation or elimination of undesirable effects of reflections of triple transit echo

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Description

【発明の詳細な説明】 本発明は、トリプルトランシットエコーヲ減少させた音
響表面波装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an acoustic surface wave device that reduces triple transit echoes.

音響表面波装置は圧電性基板表面を伝播する音響表面波
SAWを利用した装置で、SAWを発信および受信する
出力変換器および入力変換器を、上記基板表面に設置し
た構成を有する、集積化された固体機能素子である。
A surface acoustic wave device is a device that uses surface acoustic waves SAW that propagate on the surface of a piezoelectric substrate, and is an integrated device that has an output transducer and an input transducer that transmit and receive SAWs installed on the surface of the substrate. It is a solid-state functional device.

出力及び入力変換器は、通常一対の、互に入りくんだ櫛
歯形電極からなる交さ相変換器IDTが用いられる。
The output and input transducers are usually crossed phase transducers IDT consisting of a pair of interdigitated comb-shaped electrodes.

入力電気信号は、入力IDTでSAWに変換され、基板
表面を伝播し、出力IDTに達する。
The input electrical signal is converted to a SAW at the input IDT, propagates across the substrate surface, and reaches the output IDT.

出力IDTに達した上記SAWは、一部電気信号に変換
され、季望信号となるが、SAWの他の一部は、出力■
DTを通過し、また残りの一部は出力IDTで反射する
Part of the above SAW that has reached the output IDT is converted into an electrical signal and becomes a seasonal signal, but the other part of the SAW is output
The remaining part is reflected by the output IDT.

後二者の信号は不用な信号で除去する必要があるが、前
者は基板端部に設けられた音波吸収材で吸収され、後者
は入力IDTに向って伝播し、入力IDTでもう一度反
射し、その一部は出力IDTより電気信号として検出さ
れる。
The latter two signals are unnecessary signals and need to be removed, but the former is absorbed by the sound wave absorbing material provided at the edge of the board, and the latter propagates toward the input IDT and is reflected once again by the input IDT. A part of it is detected as an electrical signal by the output IDT.

この信号は希望信号の遅延時間の3倍の遅延時間を持つ
ため三重反射TTEとよばれている。
This signal is called a triple reflection TTE because it has a delay time three times the delay time of the desired signal.

このTTEの成因はダブリュ・アール・スミス(Ul
traso−nics synposivm proc
eedings 、 l 973゜pp、410〜41
3)により、電極部分と伝播路部分の音響インピーダン
スの不整合による反射MELと負荷での再放射RWから
なることが明らかにされており、さらに前者は第1図に
示したような、SAWの中心周波数における波長の約1
/8の電極幅を有する、いわゆるスプリット電極方式を
用いて実用上十分に小さくする事が出来ることが、米国
特許3,727,155に述べられている。
The cause of this TTE is W.R. Smith (Ul.
traso-nics synposivm proc
eedings, l 973゜pp, 410-41
3), it has been clarified that it consists of reflected MEL due to acoustic impedance mismatch between the electrode part and the propagation path part, and re-radiation RW at the load, and the former is caused by the SAW as shown in Figure 1. Approximately 1 wavelength at the center frequency
It is stated in US Pat. No. 3,727,155 that the electrode width can be made sufficiently small for practical use by using a so-called split electrode method having an electrode width of /8.

他、後者は挿入損失と密接な関係があり、挿入損失を増
加させずに減少させる事は、原理的に不可能である。
In addition, the latter is closely related to insertion loss, and it is impossible in principle to reduce the insertion loss without increasing it.

犬ざつばな見積りをするならばよく知られているように
、RWはデシベル単位で測定した挿入損失の2倍となる
As a rough estimate, it is well known that RW is twice the insertion loss measured in decibels.

すなわち、TTEを一40dB以下とするためには必然
的に挿入損失は20dB以上となる。
That is, in order to make the TTE less than -40 dB, the insertion loss necessarily becomes more than 20 dB.

音響表面波装置のような電気信号処理装置において、こ
のような大きな挿入損失は実用上大きな問題である。
In electrical signal processing devices such as acoustic surface wave devices, such a large insertion loss is a serious problem in practice.

従来、この点を改良するため出力IDTを2つもうけ、
一方より生じた反射を他方で打消す方法(米国特許3,
596,211)が提案されているが、IDTの数が多
くなり、したがって基板寸法が大きくなるため実用的で
ない。
Conventionally, to improve this point, two output IDTs were provided,
A method of canceling the reflection caused by one side (U.S. Patent 3,
596, 211) has been proposed, but it is not practical because it increases the number of IDTs and therefore increases the board size.

本発明は、上述した従来技術の欠点をなくし、TTE効
果の小さな音響表面波装置を提供せんとするものである
The present invention aims to eliminate the above-mentioned drawbacks of the prior art and provide an acoustic surface wave device with a small TTE effect.

本発明の要点およびその原理を図面を用いて説明する。The gist of the present invention and its principle will be explained using the drawings.

発明者らは、TTEの成因を詳細に解析した結果、中心
周波数において音響表面波の約1/4波長幅の、いわゆ
るソリッド電極3のMELと、1/8波長幅の、いわゆ
るスプリット電極1のRWとの位相差が次のように与え
られる事を得た。
As a result of detailed analysis of the causes of TTE, the inventors found that the MEL of the so-called solid electrode 3 has a width of about 1/4 of the acoustic surface wave at the center frequency, and the MEL of the so-called split electrode 1 has a width of 1/8 of the wavelength of the acoustic surface wave. It was found that the phase difference with RW is given as follows.

ここで、Ga、GTはIDTのコンダクタンス及び容量
、GL、BLは負荷のコンダクタンス及びサセプタンス
である。
Here, Ga and GT are the conductance and capacitance of the IDT, and GL and BL are the conductance and susceptance of the load.

は第1図に示すようにスプリット電極2の周期的な位
置2(点線で示す)とソリッド電極3の位置との偏差で
ある。
is the deviation between the periodic position 2 (indicated by the dotted line) of the split electrode 2 and the position of the solid electrode 3, as shown in FIG.

M本(M/2対)のソリッド電極のMELの中心周波数
に於ける大きさは、イー・ケー・シテッグの論文(IE
EE Trans 、 S U−15、42。
The size at the center frequency of the MEL of M solid electrodes (M/2 pairs) is based on the paper by E.K.
EE Trans, S U-15, 42.

1968 、 pp、I l l〜119)を発展させ
た発明者らの結果によると、次式で与えられる。
According to the results of the inventors who developed the paper (1968, pp. Ill-119), it is given by the following equation.

Kは電極長さに比例する定数、VはSAWの速度、△V
はSAWの速度が電極金属の存在で変化を受ける大きさ
である。
K is a constant proportional to the electrode length, V is the speed of SAW, △V
is the magnitude at which the SAW speed changes due to the presence of the electrode metal.

MELの周波数依存性は次式で与えられる。The frequency dependence of MEL is given by the following equation.

一方、M/2対の、中心周波数におけるスプリット電極
の反射は次式で表わされる。
On the other hand, the reflection of M/2 pairs of split electrodes at the center frequency is expressed by the following equation.

ここで、Yr、Yiは(2) 、 (3)式で与えられ
る。
Here, Yr and Yi are given by equations (2) and (3).

Ga、CTはダブリュ・−・アール・スミス等(IEE
E Trans 、 Vol、MTT−17、l I
Ga, CT is double--R. Smith et al. (IEE
E Trans, Vol, MTT-17, l I
.

1969 、pp、856〜864)により、次のよう
に写えられている。
1969, pp. 856-864), as follows:

ここで、k2はSAWに対する電気機械結合係数Ciは
一対の電極間の容量である。
Here, k2 is the electromechanical coupling coefficient Ci for the SAW and is the capacitance between the pair of electrodes.

R,Wの周波数依存性はエイ・ジェオ・ドウブリーズ(
Ultrasonics Symposium Pro
eeedings、1972.pp、35:3〜358
)によると、次式で近似的に表現される。
The frequency dependence of R and W is determined by A.G.O. de Vries (
Ultrasonics Symposium Pro
eeedings, 1972. pp. 35:3-358
), it can be approximately expressed by the following equation.

この式および(5)式より同対数のII)Tより反射さ
れるRWとMERとの関係は、MELがあたかも2倍の
対数を有するIDTからのRW反射と等価な周波数依存
性を持つことを示唆していると理解される。
From this equation and equation (5), the relationship between RW reflected from II)T with the same logarithm and MER is as if MEL had a frequency dependence equivalent to the RW reflection from an IDT with twice the logarithm. understood as suggesting.

本発明の要点とするところは、以上述べたMELとR,
Wの性質より、M/2対のソリッド電極とM対のスプリ
ット電極とからなる構造のIDTにより、両者から生ず
る反射を(1) 、 (4) 、 (5)を用いて、互
いに打消すように加えあイつせる事により広い帯域にわ
たってTTEを消滅せしめたものである。
The main points of the present invention are the above-mentioned MEL and R,
Due to the properties of W, by using an IDT with a structure consisting of M/2 pairs of solid electrodes and M pairs of split electrodes, reflections generated from both can be canceled out using (1), (4), and (5). In addition to this, TTE is eliminated over a wide band.

以下本発明を実施例を用いて詳細に説明する。The present invention will be explained in detail below using examples.

第2図は音響表面波装置のIDT4,5の配置を示す拡
大斜視図である。
FIG. 2 is an enlarged perspective view showing the arrangement of the IDTs 4 and 5 of the surface acoustic wave device.

第3図は第2図図示のII)T4,5の本発明による詳
細構造の一部省略パターンである。
FIG. 3 is a partially omitted pattern of the detailed structure of II) T4 and 5 shown in FIG. 2 according to the present invention.

以下簡単に装置の構造を述べる。サンプルはニオブ酸リ
チウム(LiNb03 )基板6上に、通常の半導体集
積回路加工法を用いて、アルミニウム材料よりなるID
TifU極4,5を設置した。
The structure of the device will be briefly described below. The sample is an ID made of aluminum material on a lithium niobate (LiNb03) substrate 6 using a normal semiconductor integrated circuit processing method.
TifU poles 4 and 5 were installed.

中心周波数での波長は、60μであり、電極ピッチは6
0μとした。
The wavelength at the center frequency is 60μ, and the electrode pitch is 6
It was set to 0μ.

入力IDTの交さ幅は1.000關、出力IDTの交さ
幅は1.077朋で入出力とも15対の一様な交さ幅の
電極よりなる、いわゆる正規型IDTである。
The input IDT has a crossing width of 1.000 mm, and the output IDT has a crossing width of 1.077 mm, and is a so-called regular type IDT consisting of 15 pairs of electrodes having a uniform crossing width for both input and output.

本実施例では入力IDTにのみ本発明を適用し、16対
の電極のうち、第3図に示すように中心部の8対が一部
ソリッド電極を含む本発明の電極1で、残りの8対がス
プリット電極1のみより成る電極で構成されている。
In this embodiment, the present invention is applied only to the input IDT, and among the 16 pairs of electrodes, as shown in FIG. A pair of electrodes consists of only a split electrode 1.

中心部分の8対の電極1は一部分1′がソリッドより成
り、他の部分子“がスプリットより成り、電極のソリッ
ドとスプリットの比率は1:13、相対的位置の変位は
、4,3μとした。
In the eight pairs of electrodes 1 in the center part, one part 1' is made of solid and the other part is made of split, the ratio of solid and split electrodes is 1:13, and the relative positional displacement is 4.3μ. did.

以上述べた本実施例のサンプル装置を、50Ωの信号源
で駆動し、50Ωの負荷を加えて動作させた結果、TT
Eは約48dBであった。
As a result of driving the sample device of this example described above with a 50Ω signal source and operating it with a 50Ω load added, TT
E was approximately 48 dB.

これは通常のスプリット構造のIDTからなる音響表面
波装置に比較し、約6dB改善されており、改善効果が
大きい。
This is an improvement of about 6 dB compared to a surface acoustic wave device consisting of a normal split-structure IDT, and the improvement effect is large.

以上述べたように、本発明により、広い帯域に於てTT
E効果が著しく少い、音響表面波装置が得られたので、
従来TTEか障害となって使用出来なかった広範囲な用
途の拡大が期待され、本発明の音響表面波装置に対する
寄与は極めて大きい。
As described above, according to the present invention, TT
Since we have obtained an acoustic surface wave device with significantly less E effect,
The present invention is expected to expand into a wide range of applications that could not be used due to TTE or other obstacles, and the contribution of the present invention to the acoustic surface wave device is extremely large.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は交さ指変換器を構成する2種類の電極形状の一
部構造の上面図、第2図は交さ指変換器の配置を示す模
式図、第3図は本発明による交さ指変換器を実用例とし
て入力文さ指変換器の電極に適用したパターン構造の一
部省略図である。 1.2・・・・・・スプリット電極、2・・・・・・ス
プリット電極の周期的な位置、3・・・・・・ソリッド
電極、4・・・・・・入力文さ指変換器、5・・・・・
・出力文さ指変換器、6・・・・・・L t N b
Os基板、7・・・・・・本発明を適用したソリッドと
スプリットの組合せよりなる電極、1′・・・・・・電
極7のソリッド部、γ“・・・・・・電極りのスプリッ
ト部。
Fig. 1 is a top view of a partial structure of two types of electrode shapes constituting the interdigital transducer, Fig. 2 is a schematic diagram showing the arrangement of the interdigital transducer, and Fig. 3 is a schematic diagram showing the arrangement of the interdigital transducer. It is a partially omitted diagram of a pattern structure applied to the electrodes of an input finger transducer as a practical example of a finger transducer. 1.2...Split electrode, 2...Periodic position of split electrode, 3...Solid electrode, 4...Input finger transducer , 5...
・Output sentence finger converter, 6...L t N b
Os substrate, 7... Electrode consisting of a combination of solid and split to which the present invention is applied, 1'... Solid part of electrode 7, γ"... Split of electrode Department.

Claims (1)

【特許請求の範囲】[Claims] 1 圧電基板上に配置された複数の交さ相変換器のうち
少なくとも一つはN対の交さ相変換器を有する音響表面
波装置において、該交さ相変換器は三つの電極部に区分
され、その中央部のN/2対の電極部はソリッド形電極
とスプリット形電極とよりなり、その両側部のN/4対
の電極部はスプリット形電極よりなる、電極部について
対称形構造を特徴とする交さ相変換器を有する音響表面
波装置。
1. In a surface acoustic wave device in which at least one of the plurality of crossed phase converters arranged on a piezoelectric substrate has N pairs of crossed phase converters, the crossed phase converter is divided into three electrode parts. The N/2 pairs of electrodes in the center are composed of solid electrodes and split electrodes, and the N/4 pairs of electrodes on both sides are split electrodes.The electrodes have a symmetrical structure. An acoustic surface wave device having a characteristic crossed phase converter.
JP11185876A 1976-09-20 1976-09-20 acoustic surface wave device Expired JPS5834973B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11185876A JPS5834973B2 (en) 1976-09-20 1976-09-20 acoustic surface wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11185876A JPS5834973B2 (en) 1976-09-20 1976-09-20 acoustic surface wave device

Publications (2)

Publication Number Publication Date
JPS5338241A JPS5338241A (en) 1978-04-08
JPS5834973B2 true JPS5834973B2 (en) 1983-07-30

Family

ID=14571914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11185876A Expired JPS5834973B2 (en) 1976-09-20 1976-09-20 acoustic surface wave device

Country Status (1)

Country Link
JP (1) JPS5834973B2 (en)

Also Published As

Publication number Publication date
JPS5338241A (en) 1978-04-08

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