JPS5834762Y2 - high frequency equipment - Google Patents

high frequency equipment

Info

Publication number
JPS5834762Y2
JPS5834762Y2 JP7414777U JP7414777U JPS5834762Y2 JP S5834762 Y2 JPS5834762 Y2 JP S5834762Y2 JP 7414777 U JP7414777 U JP 7414777U JP 7414777 U JP7414777 U JP 7414777U JP S5834762 Y2 JPS5834762 Y2 JP S5834762Y2
Authority
JP
Japan
Prior art keywords
high frequency
waveguide
short circuit
output terminal
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7414777U
Other languages
Japanese (ja)
Other versions
JPS541372U (en
Inventor
信彦 藤根
忠雄 白井
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP7414777U priority Critical patent/JPS5834762Y2/en
Publication of JPS541372U publication Critical patent/JPS541372U/ja
Application granted granted Critical
Publication of JPS5834762Y2 publication Critical patent/JPS5834762Y2/en
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は高周波装置、とくにこれに内蔵される半導体素
子が静電気、サージ電圧等によって破壊されたり劣化す
るのを防止する手段を備えた高周波装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high frequency device, and particularly to a high frequency device equipped with means for preventing semiconductor elements built therein from being destroyed or deteriorated by static electricity, surge voltage, or the like.

周波数変換器とか検波器等の装置では、そこに使用され
る周波数変換用ダイオードとか検波用ダイオードといっ
た半導体素子は電気信号の出力回路に配置されているが
、一般にその回路の出力インピーダンスは大きな出力電
圧を得るために高く設計されている。
In devices such as frequency converters and wave detectors, semiconductor elements such as frequency conversion diodes and detection diodes used therein are placed in the electrical signal output circuit, but the output impedance of that circuit generally has a large output voltage. It is highly designed to obtain.

そのためこれらの半導体素子には強電界が誘起され易い
Therefore, a strong electric field is likely to be induced in these semiconductor elements.

特に、前記の装置の出力部が開放されていたり、高抵抗
を通して接地されているような状態で強電界にさらされ
ると、出力回路の半導体素子にはもろに強電界が誘起さ
れそれらの半導体素子の破壊、劣化を招くところとなる
In particular, if the output section of the device described above is exposed to a strong electric field while it is open or grounded through a high resistance, a strong electric field will be induced in the semiconductor elements of the output circuit, causing damage to those semiconductor elements. This may lead to destruction and deterioration.

そこで、半導体素子を短絡するように金属線を前記装置
の出力部に半田付けしたり、機械的に巻き付けるといっ
た短絡器による保護策が従来より行われている。
Therefore, protection measures using short circuits have been conventionally used, such as soldering or mechanically wrapping a metal wire around the output part of the device to short-circuit the semiconductor element.

ところで、従来の方法では装置の特性チェックの度毎に
必要とされる短絡器の着脱が余り簡単でなく、経済的と
は言えないので、全てのチェック作業が終った時点で短
絡器を装着するのが一般的である。
By the way, in the conventional method, it is not easy to attach and detach the short circuit that is required every time the characteristics of the device are checked, and it cannot be said to be economical. Therefore, the short circuit is attached when all the checking work is completed. is common.

したがって、作業途中で半導体素子が強電界にさらされ
ると破壊したり、劣化する恐れがあるし、短絡器を半田
付けするような場合には半田こての漏洩電流で破壊ある
いは劣化することもある。
Therefore, if a semiconductor element is exposed to a strong electric field during work, it may be destroyed or deteriorated, and when soldering a short circuit, it may be destroyed or deteriorated by leakage current from the soldering iron. .

本考案の目的は装置本体に内蔵された半導体素子を静電
破壊あるいはサージ電圧破壊がら保護する機能を有する
高周波装置を提供することにある。
An object of the present invention is to provide a high frequency device having a function of protecting a semiconductor element built into the main body of the device from electrostatic discharge damage or surge voltage damage.

本考案の高周波装置は導波管マウント内に半導体素子が
内蔵され、この半導体素子の一端が導波管壁に電気的に
接続され、他端は導波管壁と絶縁されこれより外部へ導
出された出力端子に接続され、導波管外表面には接地端
子が設けられ、この接地端子と出力端子とは着脱可能な
バネ状導体によって両者間が短絡できるようになってい
る。
The high frequency device of the present invention has a semiconductor element built into the waveguide mount, one end of which is electrically connected to the waveguide wall, and the other end is insulated from the waveguide wall and led out from there. A ground terminal is provided on the outer surface of the waveguide, and the ground terminal and the output terminal can be short-circuited by a detachable spring-like conductor.

本考案を第1図を参照してより詳細に説明する。The present invention will be explained in more detail with reference to FIG.

第1図は本考案の一実施例として高周波帯の検波器に適
用した例を示す断面図である。
FIG. 1 is a sectional view showing an example of the present invention applied to a high frequency band detector.

この検波器は導波管マウント1内の適当な位置に検波ダ
イオード2を挿入したも°ので、検波ダイオード2の一
端は金属製のキャップ3によって導波管マウント1と電
気的に導通しており、もう一端は導波管マウント1とは
絶縁体4によって絶縁された出力端子5に接続されてい
る。
This detector has a detection diode 2 inserted at an appropriate position within the waveguide mount 1, so one end of the detection diode 2 is electrically connected to the waveguide mount 1 through a metal cap 3. , and the other end is connected to an output terminal 5 which is insulated from the waveguide mount 1 by an insulator 4 .

出力端子5と、導波管マウント1に設けられた接地端子
6の間には一般に検波器の負荷抵抗と呼ばれる抵抗体7
が接続されている。
Between the output terminal 5 and the ground terminal 6 provided on the waveguide mount 1, there is a resistor 7 which is generally called a load resistance of the detector.
is connected.

その抵抗値が十分小さければ抵抗体7は高電界から検波
ダイオード2を保護する短絡器としての役割を果すこと
ができるはずであるが、検波出力を十分に得ることと検
波器の次に接続されるであろう増幅器の人力インピーダ
ンスとの兼ね合いから抵抗体7は一般に数十オーム以上
の値のものが使われ短絡器としては不十分である。
If the resistance value is small enough, the resistor 7 should be able to play the role of a short circuit that protects the detection diode 2 from high electric fields, but it is necessary to obtain a sufficient detection output and to connect it next to the detector. In consideration of the human power impedance of the amplifier, the resistor 7 generally has a value of several tens of ohms or more, which is insufficient as a short circuit.

そこで、抵抗体7と並列に良導体の短絡器8を設け、使
用時に取り外すようにしている。
Therefore, a short circuit 8 made of a good conductor is provided in parallel with the resistor 7, and is removed during use.

本考案による半導体装置に用いる短絡器8の例を第2図
a−1)に示す。
An example of the short circuit 8 used in the semiconductor device according to the present invention is shown in FIG. 2a-1).

第2図aは弾性に富んだ金属線をコイル状のばねにする
ことによって、また第2図すは弾性に富んだ金属板をた
わませて平板ばねにすることによって、いずれも伸縮性
を十分持たせたものである。
Stretchability is achieved by making a highly elastic metal wire into a coiled spring, and by bending a highly elastic metal plate into a flat spring, as shown in Figure 2a. It has had enough.

このように伸縮性に富んだ短絡器によれば、装置への着
脱は極めて容易であり、しかも出力端子および接地端子
と各々半田付けすることなく、機械的に引掛けて、置く
だけで十分良好な電気的接触が得られる。
With such a highly elastic short circuit, it is extremely easy to attach and detach it to the device, and it is sufficient to simply hook it mechanically and place it without soldering to the output terminal and ground terminal. A good electrical contact can be obtained.

以上の記述によって本考案による半導体装置の有用性は
明らかである。
From the above description, the usefulness of the semiconductor device according to the present invention is clear.

また本考案は実施例として引用した検波器の他にも、短
絡器を必要とする高周波装置へ広く適用できることは明
らかである。
Furthermore, it is clear that the present invention can be widely applied to high frequency devices that require short circuits, in addition to the detectors cited as examples.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案になる半導体装置の一実施例を示す断面
図であり、第2図は本考案になる半導体装置に用いる短
絡器の一例を示す概観図である。 1・・・・・・導波管マウント、2・・・・・・半導体
素子、3・・・・・・キャップ、4・・・・・・絶縁体
、5・・・・・・出力端子、6・・・・・・接地端子、
7・・・・・・抵抗体、8・・・・・・短絡器。
FIG. 1 is a cross-sectional view showing an embodiment of the semiconductor device according to the present invention, and FIG. 2 is an overview diagram showing an example of a short circuit used in the semiconductor device according to the present invention. 1... Waveguide mount, 2... Semiconductor element, 3... Cap, 4... Insulator, 5... Output terminal , 6... Ground terminal,
7...Resistor, 8...Short circuit.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 導波管マウント内に半導体素子が内蔵され、該半導体素
子の一端が導波管壁に電気的に接続され、他端は前記導
波管壁と絶縁されこれにより外部へ導出された出力端子
に接続され、導波管外表面には接地端子が設けられ、前
記出力端子と端地端子とは着脱可能なバネ状導体によっ
て両者間が短絡できるように構成されていることを特徴
とする高周波装置。
A semiconductor element is built in the waveguide mount, one end of the semiconductor element is electrically connected to the waveguide wall, and the other end is insulated from the waveguide wall and is thereby connected to an output terminal led out to the outside. A high frequency device characterized in that the output terminal and the end terminal are connected to each other, and a ground terminal is provided on the outer surface of the waveguide, and the output terminal and the end terminal are configured so that a short circuit can be made between them by a detachable spring-like conductor. .
JP7414777U 1977-06-06 1977-06-06 high frequency equipment Expired JPS5834762Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7414777U JPS5834762Y2 (en) 1977-06-06 1977-06-06 high frequency equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7414777U JPS5834762Y2 (en) 1977-06-06 1977-06-06 high frequency equipment

Publications (2)

Publication Number Publication Date
JPS541372U JPS541372U (en) 1979-01-06
JPS5834762Y2 true JPS5834762Y2 (en) 1983-08-04

Family

ID=28987413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7414777U Expired JPS5834762Y2 (en) 1977-06-06 1977-06-06 high frequency equipment

Country Status (1)

Country Link
JP (1) JPS5834762Y2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929130U (en) * 1982-08-16 1984-02-23 有限会社エフ・テイ・エス企画社 bean cutter
JPS60104034U (en) * 1983-12-19 1985-07-16 山本農機株式会社 bean cutter

Also Published As

Publication number Publication date
JPS541372U (en) 1979-01-06

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