JPS5832370U - Voltage detection circuit for low voltage circuits - Google Patents
Voltage detection circuit for low voltage circuitsInfo
- Publication number
- JPS5832370U JPS5832370U JP12436381U JP12436381U JPS5832370U JP S5832370 U JPS5832370 U JP S5832370U JP 12436381 U JP12436381 U JP 12436381U JP 12436381 U JP12436381 U JP 12436381U JP S5832370 U JPS5832370 U JP S5832370U
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- transistor
- tested
- power supply
- detection circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measurement Of Current Or Voltage (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
図面は本考案の電圧検出回路の一実施例の構。成因であ
る。
１・・・入力端子、２・・・トランジスタ、３・・・抵
抗、４・・・ダイオード、５・・・抵抗、６・・・抵抗
〔負荷〕、７・・・電圧検出端子、■１・・・ダイオー
ド順方向降下 □電圧、ＶＥｌｅ”・・トランジス
タのベース−エミッタ間のスレッシュホールド電圧。The drawing shows the structure of one embodiment of the voltage detection circuit of the present invention. It is the cause. 1... Input terminal, 2... Transistor, 3... Resistor, 4... Diode, 5... Resistor, 6... Resistor [load], 7... Voltage detection terminal, ■1 ...Diode forward drop □Voltage, VEle"...Threshold voltage between the base and emitter of the transistor.
Claims (1)
と負荷との直列回路に印加し、前記トランジスタのベー
スに被検査電源電圧から所定のバイアス電圧を印加する
と共にこのバイアス回路に前記トランジスタと温度係数
が同じダイオードを直列に被検査電源電圧に対して順方
向に介装し、被検査電源電圧の変動に応じて前記トラン
ジスタをベース−エミッタ間のスレッシュホールド電圧
でスイッチングさせて前記トランジスタのオン−オフで
被検査電源の電圧変化を検出するよう構成したことを特
徴とする低電圧回路用電圧検出回路。A power supply voltage to be tested is applied to a series circuit between the collector emitter of the transistor and the load, a predetermined bias voltage is applied from the power supply voltage to be tested to the base of the transistor, and a diode having the same temperature coefficient as the transistor is connected to the bias circuit. are connected in series in the forward direction relative to the power supply voltage to be tested, and the transistor is switched at a threshold voltage between the base and emitter according to fluctuations in the power supply voltage to be tested, and the transistor to be tested is turned on and off. A voltage detection circuit for a low voltage circuit, characterized in that it is configured to detect voltage changes in a power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12436381U JPS5832370U (en) | 1981-08-21 | 1981-08-21 | Voltage detection circuit for low voltage circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12436381U JPS5832370U (en) | 1981-08-21 | 1981-08-21 | Voltage detection circuit for low voltage circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5832370U true JPS5832370U (en) | 1983-03-02 |
Family
ID=29918232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12436381U Pending JPS5832370U (en) | 1981-08-21 | 1981-08-21 | Voltage detection circuit for low voltage circuits |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5832370U (en) |
-
1981
- 1981-08-21 JP JP12436381U patent/JPS5832370U/en active Pending
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