JPS5831530A - Manufacturing apparatus for semiconductor device - Google Patents
Manufacturing apparatus for semiconductor deviceInfo
- Publication number
- JPS5831530A JPS5831530A JP12972181A JP12972181A JPS5831530A JP S5831530 A JPS5831530 A JP S5831530A JP 12972181 A JP12972181 A JP 12972181A JP 12972181 A JP12972181 A JP 12972181A JP S5831530 A JPS5831530 A JP S5831530A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- wafer
- supply
- solution
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 この発明社半導体装置の製造装置に関するものである。[Detailed description of the invention] This invention relates to an apparatus for manufacturing semiconductor devices.
従来、半導体装置の製造装置、特に写真蝕刻に使用する
塗布装置や現像装置に於いては、つ゛エハース上にノズ
ルよシ処理液を噴出して、当該工程の処理を行っていた
。このとき、処理液をノズルから供給する際に１従来の
システムであれば、ノズルから溶剤の蒸発などが起り処
理液の組成変化などがあった。また、処理が終了した場
合の液切夛においても、ノズルから空気勢の逆流があシ
仁れらが、円滑な供給の障害となっていた。Conventionally, in semiconductor device manufacturing equipment, particularly in coating equipment and developing equipment used in photolithography, processes have been carried out by jetting a processing liquid from a nozzle onto the wafer. At this time, when the processing liquid is supplied from the nozzle, in a conventional system, the solvent evaporates from the nozzle and the composition of the processing liquid changes. Furthermore, when the liquid is drained after the treatment is completed, the backflow of air from the nozzle is an obstacle to smooth supply.
この発明の目的は、半導体装置製造において前記の欠点
のないノズルからの処理液を円滑に供給できる装置を提
供することにある。An object of the present invention is to provide an apparatus that can smoothly supply a processing liquid from a nozzle without the above-mentioned drawbacks in semiconductor device manufacturing.
この発明の半導体装置れ、従来の装置と違ってノズルと
供給源との間に適当な大きさの液だめを有する事を特徴
とするものである。すなわち、半導体製造に於ける写真
蝕刻工程に使用する塗布装置及び現像装置において、処
理液を噴出できるノズルを有し、このノズルと供給ポン
プとの間に液だめを有する事を特徴とする塗布装置及び
現像装置である。The semiconductor device of the present invention is different from conventional devices in that it has a liquid reservoir of an appropriate size between the nozzle and the supply source. That is, in a coating device and a developing device used in a photolithography process in semiconductor manufacturing, a coating device is characterized by having a nozzle capable of spouting a processing liquid and having a liquid reservoir between the nozzle and a supply pump. and a developing device.
この発明の半導体製造装置によれば、液だめをノズル付
近に設置した場合は、ノズルから溶剤の蒸発を起りに＜
＜シたり、液切りの際の空気の逆流を防いだりし、また
、液だめを供給ボ／グ付近に設置した場合などは急激な
圧送に対する緩衝の働きをしたりする。According to the semiconductor manufacturing apparatus of the present invention, when the liquid reservoir is installed near the nozzle, the solvent evaporates from the nozzle.
It prevents the backflow of air during draining and draining, and also acts as a buffer against sudden pressure feeding when the liquid reservoir is installed near the supply bog.
次にこの発明の実施例につき図を用いて説明する。Next, embodiments of the present invention will be described with reference to the drawings.
第１図はこの発明の一実施例を説明するための装置の見
識シ図である。この実施例の見識シ図は、説明を簡単に
するために塗布装置のしかも液だめをノズル付近に設置
したものである。まず、ウェハース１が塗布装置９に入
ると同転軸２が作動して、ウェハース１を固定する。次
に供給タンク６にあるフォトレジスト１０はポンプ５に
圧送されて、液切シ装置８及びパイプ４を通ってノズル
３よりウェハースに滴下される。滴下の終了したレジス
トは、液切シ装置８によ〕、またノズル３へもどされる
。このとき、液切シ装置８が強く作動し九場合などは、
フォトレジストはかなシ逆流し、空気などがノズル３に
入）ζむ。また、液切シが不十分であった場合には、ノ
ズル３にフォトレジストがたまシ、雫となりてウェハー
スに滴下することがある。従って液切シのタイミングお
よび条件にはかな多のむずかしさを伴うものとなってい
九しかしながら、ノズ、ル３の付近に適当な大きさの液
だめ装置７を設置することによって、液切りが強すぎた
場合でも、フォトレジストの逆流力；防止でき、を九液
切シが不十分であったとしてもノズル３からの雫の落下
を防止することが可能である。FIG. 1 is a schematic diagram of an apparatus for explaining an embodiment of the present invention. The diagram of this embodiment shows a coating device with a liquid reservoir located near the nozzle to simplify the explanation. First, when the wafer 1 enters the coating device 9, the rotary shaft 2 is activated to fix the wafer 1. Next, the photoresist 10 in the supply tank 6 is fed under pressure to the pump 5, passes through the draining device 8 and the pipe 4, and is dropped onto the wafer from the nozzle 3. The resist that has been dropped is returned to the nozzle 3 by the liquid draining device 8. At this time, if the liquid drain device 8 operates strongly,
The photoresist flows back and air enters the nozzle 3). Furthermore, if the liquid draining is insufficient, the photoresist may form in the nozzle 3 and drip onto the wafer. Therefore, the timing and conditions for draining the liquid are very difficult to determine.9 However, by installing a reservoir device 7 of an appropriate size near the nozzle 3, the draining can be strengthened. Even if the photoresist backflow force is exceeded, it is possible to prevent the backflow force of the photoresist, and even if the liquid cutting is insufficient, it is possible to prevent drops from falling from the nozzle 3.
また実施例で説明した以外にもたとえば、液だめ装置を
ポンプ付近に設置した場合などにも、フォトレジストの
圧送の際に緩衡効果がちシ、フォトレジストの急激な滴
下などを防止できる。Further, in addition to the example described in the embodiment, for example, when the liquid reservoir device is installed near the pump, a buffering effect tends to occur when the photoresist is pumped, and sudden dropping of the photoresist can be prevented.
以上説明したとおシ、特に写真蝕刻における塗布工程に
本発明の装置を適用すれば、当該工程における不良は著
しく低減し、製品の歩留りは大巾に向上する。As explained above, if the apparatus of the present invention is applied to the coating process, especially in photoetching, defects in the process will be significantly reduced and the yield of products will be greatly improved.
なお、上述の実施例において説明を簡単にする為、写真
蝕刻における塗布工程を例にとりだが、本発明がノズル
からパイプを通って液を噴射する装置全てに通用できる
のは言うまでもない。In the above embodiments, in order to simplify the explanation, a coating process in photolithography was used as an example, but it goes without saying that the present invention is applicable to any device that sprays liquid from a nozzle through a pipe.
第１図は塗布装置を例にとった本発明の見識シ図である
。
なお図において、１はウエノ・−ス、２社回転軸、３は
ノズル、４はパイプ、５はポンプ、６は供給タンク、７
は液だめ装置、８は液切シ装置、９は塗布装置、を各々
示している。FIG. 1 is a schematic diagram of the present invention, taking a coating device as an example. In the figure, 1 is Ueno-su, 2 is the rotating shaft, 3 is the nozzle, 4 is the pipe, 5 is the pump, 6 is the supply tank, and 7
Reference numeral 8 indicates a liquid reservoir device, 8 indicates a liquid draining device, and 9 indicates a coating device.
Claims (1)
有する事を特徴とする半導体装置の製造装置。1. An apparatus for manufacturing a semiconductor device, comprising a nozzle and a liquid reservoir between the skeleton nozzle and a supply pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12972181A JPS5831530A (en) | 1981-08-19 | 1981-08-19 | Manufacturing apparatus for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12972181A JPS5831530A (en) | 1981-08-19 | 1981-08-19 | Manufacturing apparatus for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5831530A true JPS5831530A (en) | 1983-02-24 |
Family
ID=15016551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12972181A Pending JPS5831530A (en) | 1981-08-19 | 1981-08-19 | Manufacturing apparatus for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5831530A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5977225U (en) * | 1982-11-15 | 1984-05-25 | ソニー株式会社 | Semiconductor device manufacturing equipment |
| JPS63319078A (en) * | 1987-06-22 | 1988-12-27 | Tokyo Electron Ltd | Discharger |
| WO2005069077A3 (en) * | 2003-12-29 | 2009-03-26 | Asml Holding Nv | Method and system of coating polymer solution on surface of a substrate |
-
1981
- 1981-08-19 JP JP12972181A patent/JPS5831530A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5977225U (en) * | 1982-11-15 | 1984-05-25 | ソニー株式会社 | Semiconductor device manufacturing equipment |
| JPH0128671Y2 (en) * | 1982-11-15 | 1989-08-31 | ||
| JPS63319078A (en) * | 1987-06-22 | 1988-12-27 | Tokyo Electron Ltd | Discharger |
| WO2005069077A3 (en) * | 2003-12-29 | 2009-03-26 | Asml Holding Nv | Method and system of coating polymer solution on surface of a substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60033084T2 (en) | Apparatus and method for coating a metal layer on the surface of a seed layer of a semiconductor wafer | |
| KR20090121215A (en) | Coating treatment method, computer-readable storage medium, and coating treatment apparatus | |
| US4855775A (en) | Developing apparatus | |
| JPS5831530A (en) | Manufacturing apparatus for semiconductor device | |
| JP2003324052A (en) | Method and device for removing coating film | |
| JPH0248137B2 (en) | ||
| JPH03272140A (en) | Chemical treater for semiconductor substrate | |
| JP2594577Y2 (en) | Substrate dip processing equipment | |
| JPS5941300B2 (en) | Development processing equipment | |
| JP2507966B2 (en) | Coating device | |
| JPS61239625A (en) | Resist coating apparatus | |
| JP2533149B2 (en) | Wet etching method | |
| US10042262B2 (en) | Negative developing method and negative developing apparatus | |
| JPS5817443A (en) | Photoresist developing method and its device | |
| JPS6342130A (en) | Cleaning method for substrate and cleaning device | |
| JPH03286517A (en) | Treatment method | |
| US9063428B2 (en) | Method for manufacturing semiconductor device | |
| JPS6281715A (en) | Semiconductor manufacturing equipment | |
| JPH0128671Y2 (en) | ||
| JPS59145065A (en) | Inhibition of liquid dripping from two-fluid spray nozzle | |
| JP2809754B2 (en) | Developing device | |
| JPH0294435A (en) | Etching apparatus | |
| JPH021298B2 (en) | ||
| JPH03263816A (en) | Treatment method | |
| JPS6247125A (en) | Manufacture of semiconductor device |