JPS5828833A - Preparing flat surface - Google Patents

Abstract

PURPOSE:To eliminate concave or convex on the glass substrate surface having been subjected to patterning by filling only the concaves of level different region with the silicon oxide film through the exposure with the polycrystal silicon which causes concave and convex used as the mask. CONSTITUTION:The desired polycrystal silicon pattern 5 is formed on the surface of glass substrate 4, and moreover the silicon oxide 6 in the same thickness as said polycrystalline silicon is formed on the entire surface in order to fill the convex where there is no polycrystal silicon. Then, the negative resist 7 is coated on the entire surface and is subjected to the irradiation of ultra-violet ray in order to expose this negative resist from the rear side of glass plate. In this case, the polycrystal silicon 5 is used as the mask for light beam and therefore the light beam passes only the region where the polycrystal silicon does not exist, exposing the resist 7. Then, an element is dipped into the resist developer and thereby unexposed resist (b) is removed completely and the silicon oxide is etched with the remaining resist (a) used as the mask. Thereby, only the silicon oxide formed on the polycrystalline silicon 5 is removed.

Description

[Detailed description of the invention] The present invention is produced by patterning a thin film.

The present invention relates to a method for flattening unevenness using an effective Fukiko force method.

Crystalline display device (('4, current plane f~ display device-S7
Technically, 'f' is also C.
41 From pure segment display method to large display capacity +, Ma for 4) IJ xare on the other hand (F- dramatic development
Niji, and more eye display items) For the Tetsuko, the LCD 1',!
The eclipse was 10 miku [everything under 1 m2 was defeated].

When using a thin liquid crystal layer for this A/V, the unevenness of the surface of the two glass plates sandwiching the 81 crystal (1.
Nage? +, + (J: Not.

In particular, in the case of a one-type active matrix array, a sandbag transistor or the like is used on one surface of two crows with 1 m of liquid interposed between them, and the array is π71. At this time, for example, polycrystalline silicon thin film, aluminum thin film, etc. are used as the substrate and transistor part side, and these thin films are patterned. For this reason, as shown in Part 1, there will always be unevenness on the surface of the board.
/1117c Polycrystalline silicon 2 and -γ luminium are patterned on the white surface of the glass plate 1, but the film thickness of the polycrystalline silicon 2 is usually 6000 to 5000 angstroms. The film thickness is aluminum 75+5,000 to 10,000 angstroms, and as can be seen from FIG. 2, this film thickness directly becomes the size of the step. When constructing a liquid crystal panel using this glass plate, this glass plate and another glass plate are faced in parallel and the liquid crystal is sealed between them, so polycrystalline silicon and aluminum are added to the thickness of the liquid crystal layer depending on the location. The result differs by the film thickness. For example, if the average thickness of the liquid crystal layer is 5 micrometers, the maximum thickness of the thin film can be considered to be 1 micrometer, and the variation in the thickness of the liquid crystal layer is 20
%, and therefore, when the crystalline light is turned on, the color unevenness is remarkable, and the display quality deteriorates.

The present invention aims to improve the above drawbacks. :,
In this method, only four parts of the step are filled with a silicon oxide film to eliminate the unevenness on the surface of the patterned glass substrate by using a highly effective exposure method.

The present invention will be explained in detail below with reference to the drawings.

Figure 2 shows a 1ζ thin I formed on the surface of a glass substrate according to the present invention.
I': & An example of a method θS for converting unevenness into one day is shown in the process 1111'i.

(a) (-r glass group (I and 4 and ``11
Is it 1+? ]'s multi-connection +ti'+'/'I con pattern 5 is formed before b・su, kira f/j.

Concave 711 without polycrystalline silicon (! In order to make polycrystalline silicon and silicon oxide 6 of turn 1 [11th] in shape 1',% Lπ time)
Cross section I'iI of k! This is what Ryukin showed. Next VC 2nd
Toss l (b) in the soil ((N/j Raynst 7 entire surface VC wooden cloth [7, glue the horn board ↓ Riko's negative resist to the swamp f<, shine ultraviolet T 17; 1-4 In this case, the polycrystalline silicon 5 light mask ("
Only a small amount of light passes through the polycrystalline silicon and falls onto the resist 7. Accordingly, in the figure, only one area of the head of the resist 7 indicated by A is exposed, and n unexposed grooves are formed in the area indicated by b. Next, all unexposed resists are removed by dipping in a resist developer, and the remaining resist toy 4τ is used as a mask to etch all of the silicon oxide 6. Only the silicon oxide formed on the multi-crystalline V silicon 5 is removed. . After etching the silicon oxide layer B, the remaining resist [.
c) As shown in K, the unevenness of the surface disappears everywhere and becomes flat. In the end, exposure is performed using polycrystalline silicon, which is the source of unevenness [4], as a mask, so this polycrystalline silicon pattern and the silicon oxide pattern that fills the four parts match perfectly, resulting in extremely high surface flatness. It becomes something. According to the present invention, like buried soil, the unevenness caused by configuring a thin film pattern on a transparent substrate such as glass,
Due to the transparency of the substrate, it is possible to completely fill the recesses by exposing the base to light from the back side and using the 'Nj film as a mask, making it possible to achieve extremely excellent flatness. Hanging in the above example? Although it is a thin +1ψ5 polycrystalline silicon as described above, it can be applied to all kinds of opaque and semi-transparent thin films, as well as metals such as aluminum. There must be. Furthermore, this technique can be applied not only to surface flattening, but also to patterning two types of members without alignment errors.

-5= 4 Drawings! The conventional surface unevenness 11 is 16L7ζ
FIG. 1 is an analytical view showing an example of glass W-shaped glass. Also, Figure 2 (a
, ) to (c) are cross-sectional views showing an example of a method for completely manufacturing a turret on a crow base 1 with no uneven surface shape according to the present invention.

+, A...Glass 2.5...Multi-bond silicon 3...Aluminum 6...Silicon oxide 7...Resist that's all Applicant: Suwa Tokogo Co., Ltd. 111 people, 10th number of patent attorneys 6-

Claims (1)

[Claims] An opaque pattern (1 semi-transparent thin film is formed on the transparent substrate, and the unevenness of the transparent substrate soil caused by the presence or absence of the thin film by patterning the semi-transparent thin film on the opaque pattern is formed by forming depressions on the uneven surface. Form a fill-in and negative type resist, expose to light from the back side of the transparent substrate using the opaque or semi-transparent thin film as a mask, develop and remove the unexposed resist on the opaque or semi-transparent thin film, and expose. The surface flattening method is characterized by etching away the side of the part where the grooves are filled with ink.