JPS582835A - Developing method - Google Patents

Abstract

PURPOSE:To reduce the amount of a developer to be used and to form a fine pattern with high precision in a short time, by placing a resist layer in a gaseous atmosphere of an org. solvent in the developer after exposing the resist layer on a substrate and spraying the developer after activiating the exposed part. CONSTITUTION:After a thin chromium film 6 is stuck on a substrate 5 and a substrate 1 to be treated on which a negative type phtoresist 7 is applied is exposed, the substrate 1 is placed on a platen 11 in a tightly closed container 10 in which an org. solvent 3'' being a developer is contained and the inside of the container 10 is filled with a gaseous solvent 9 by heating and the solvent is permeated into an exposed part of the resist 7 and the part 8 is activiated. While the substrate 1 is rotated, the developer 3' is sprayed to remove the resist on the exposed part 8 completely. By such an immersion developing method, the fine pattern such as LSI with high precision is obtained in a short time using a little developer and remaining no resist residue.

Description

DETAILED DESCRIPTION OF THE INVENTION The invention relates to a developing method, particularly a developing method used when forming fine paddle turns.

With the advanced integration of LIIIO, advanced O technology has become necessary for mold 1@A turn formation. Conventionally, the developing method carried out in JllA main ty #4111 is the immersion method (Up method) as shown in 1st WA, or the e-soufflé method as shown in Fig. 2 of the company. That is, in FIG. 5111, a substrate 1 (hereinafter referred to as a heat-treated substrate) which has been exposed to light every turn after being coated with photoresist is immersed in an organic solvent solution 3 of a developer in a container Wh2. With this immersion development method, as the number of times it is used increases, the developer becomes cloudy, leaving residues of Resos F, thin skin residue9,
In FIG. 2, where there are many problems such as the adhesion of organic substances, the developer 3 is sprayed onto the substrate to be processed using an IK spray layer 4. With this method, it is possible to obtain a better resist/turn with less resist residue and thin skin residue than the 1isp method shown in Figure 1, and the process time is also shorter than the 11p method. can do. However, the amount of developer used is the first! Compared to the glIID method, 2~! S times, which leads to an increase in costs.

An object of the present invention is to provide a developing method that requires a short processing time and uses a small amount of developer.

Another object of the present invention is to provide a method that allows a very sharp resist shape to be obtained and fine Δ turns to be formed.

In the case of unexploded WOS, the substrate to be processed is placed in a pre-exposure step 11011 in a gas atmosphere of an organic solvent in a development method in which a resist is coated on the side of the substrate to form fine Δ turns and then developed using an organic solvent. This is achieved by a developing method in which the organic solvent is placed in the film, and then spraying is carried out using the organic solvent described above.

The present invention does not incorporate a wrapping method, but instead incorporates a spray method in one part. That is, as a spray method, the substrate to be treated is placed in an organic solvent OtX atmosphere, which is a developing solution, and the organic solvent is applied onto the surface of the wrinkled surface. - Ping) and then conventional O
According to Book II@, the substrate to be processed t1i is used in the gas atmosphere of the writing liquid and an organic solvent is appropriately permeated into the yst (the exposed area is activated). The next spray development can be completed in a short time.

It is possible to shorten the development processing time and reduce the amount of developer used. Furthermore, according to the present invention, by placing the substrate to be processed in an organic solvent gas atmosphere, the exposed area is activated as described above, and then the resist stripping can be performed with high precision using an O. A resist shape is obtained on the shear f1, and a fine pattern pattern can be formed.

The following description will be made based on the third WJ, which is an embodiment of the present invention.

In No. **, xylene-type developer for organic solvent 0nef@7 Otrezos F, which is a developer, is put in the good book closed container 11, and the target group 4i21 is enlarged and placed on the target substrate mounting table 11. has been done. An atmosphere of xylene and organic solvents (31C) and gas (1G) is created in the opening/closing container (9). The J6 processed board has a thickness of 2.3 mm! 1 on the ras group #t5
Deposit ooolo thickness 0 chrome 6 and apply negative W on top of it.
7 Apply 100Q to 100001 of Otoresist 1,
It has an exposure section 8. The aforementioned airtight container 9 is SO
A container with W~1001 sides is preferable, and at about 26°C 5~1
When the developer 31 is put in for 0 hours and heated at 9 volumes, the rate of conversion of the developer to an organic surfactant in the sealed container increases.As a resist related to the present invention, fI! l! In addition to photoresist O, II Fujiresist (electron beam resist) such as Ne, ys
For GTO, MA and J-mounted P series are also used, and MIK (methyl ethyl keto 2
)l and MIIK (methyl isobutyl ketone) etc. may be used, sI! lIK As shown, the treated group I [developer O organic steel gas 1! After being exposed to the surrounding air 10 for about 60 minutes, the substrate 1 to be processed is shown to Kiien and the first step is performed.
o~lOO~/, l, 0 developer 3' is conventional OML/s
It is applied for 0#1e seconds and development is completed. There is no residual thin film, etc., and it is possible to remove the 4 o, s s Δ turns.

4 rlAWIO simple explanation III ■ and happy! The figures are schematic diagrams showing the conventional dlν method and spray method, respectively, and No. ** is a schematic cross-sectional view of the organic agent related to the unexploded @, enlarged in an Ot gas atmosphere, showing the equipment to be treated. .

l-Substrate to be processed, 3.3'-・Developer, 3#-, xylene m developing solution, 4--spray one type, 5...wys substrate, S-Z ROM, γ-1-f Type 7 Otorezost, 8--Exposed part, 9-- Sealed container, 10- Organic solvent gas atmosphere.

patent applicant Fujitsu Limited patent application agent Patent attorney Akira Aoki Patent attorney Kazuyuki Nishidate Patent attorney Yukio Uchida Patent attorney Akira Yamaguchi

Claims (1)

[Claims] A developing method K in which a resist coated on a substrate is exposed to an electron beam, ultraviolet light, deep ultraviolet light, etc. to form fine Δ turns, and then developed using an organic solvent. ; Place the J6m1 substrate to be subjected to the exposure process in an organic solvent gas atmosphere, and then apply SDA A using the organic solvent.
A developing method characterized by performing development by m-direction.