JPS582807A - Manufacture of diffraction grating - Google Patents

Manufacture of diffraction grating

Info

Publication number
JPS582807A
JPS582807A JP10025981A JP10025981A JPS582807A JP S582807 A JPS582807 A JP S582807A JP 10025981 A JP10025981 A JP 10025981A JP 10025981 A JP10025981 A JP 10025981A JP S582807 A JPS582807 A JP S582807A
Authority
JP
Japan
Prior art keywords
lattice
grating
layer
forming
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10025981A
Other languages
Japanese (ja)
Inventor
Osamu Mikami
修 三上
Kazuo Hirata
一雄 平田
Masatoshi Oda
政利 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10025981A priority Critical patent/JPS582807A/en
Publication of JPS582807A publication Critical patent/JPS582807A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • G02B5/1847Manufacturing methods
    • G02B5/1857Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a diffraction grating used for a branching filter for <=1,000Angstrom wavelength, by providing an easily oxidizable layer on a substrate, forming a grating pattern for masking, etching away the easy-to-oxide layer, and then performing an oxidation treatment. CONSTITUTION:On a substrate 2, an easily oxidizable layer 3 Al, etc., is provided and then a masking grating M with a striped grating pattern of synchronism 2v is formed. Then, only a masking striped body (m) with width (e) and an easily oxidizable material grating (h) beneath it are formed the substrate is dipped in about 60 deg.C warm water to carry out an oxidation treatment. The oxidation proceeds from both sides 9 and 10 where the warm water comes into contact, thus obtaining a linear oxide body (g) with width D. Then, the striped body (m) for a color mask is etched away and the remaining layer (h) is removed similarly to obtain a precise diffraction grating of only the linear oxide body (g).

Description

【発明の詳細な説明】 本−―は、光集積回路に掛ける波長分波用フィルタ、分
me@置牟導体レーダ等に用いられている1lfr暢子
等を得る場合に適用し得る回折格子のIIK#&の改良
に関する。
DETAILED DESCRIPTION OF THE INVENTION This is a IIK of a diffraction grating that can be applied to obtain a 1lfr Nobuko etc. used in a wavelength demultiplexing filter applied to an optical integrated circuit, a demultiplexing radar, etc. Regarding improvements to #&.

回折格子は予定・lem(これを−11に、Aとする)
の格子パターンを有するものであるが、近時、S子パI
−yの周期Aが10oo1オ一/回路に於ける波長分波
用フィルタ、分布帰遺置半導体し−ずに用いられている
回折格子等に所望とされている。
The diffraction grating is planned/lem (set this to -11 and call it A)
It has a lattice pattern of
A period A of -y is desired for a wavelength demultiplexing filter in a 1000-1/1 circuit, a diffraction grating used without a distributed repository semiconductor, and the like.

然し乍ら従来の回折格子の製法に於いては、上述せる所
望事項を満足せしめるに困難を伴うものであった。即ち
回折格子の製法として、従来、感光性材層にレーザ光の
干渉縞を露光せしめる工程を含んで、感光性材層より形
成された周期Aの格子パターンを有するマスク用格子を
得、そのマスク用格子を用いて目的とする回折楊子を得
るという方法が、回折格子を、その格子パターンの周期
Aが他の回折格子の製法にて得られる回折格子の格子パ
ターンの周84(比しより小なるものとして容易に得る
ことが出来るとして、提案されている。
However, in the conventional method of manufacturing a diffraction grating, it has been difficult to satisfy the above-mentioned desired requirements. That is, as a manufacturing method for a diffraction grating, conventional methods include a step of exposing a photosensitive material layer to interference fringes of a laser beam to obtain a grating for a mask having a grating pattern with a period A formed from the photosensitive material layer. The method of obtaining the desired diffraction tooth using a diffraction grating is that the period A of the grating pattern is smaller than the circumference 84 of the grating pattern of the diffraction grating obtained by other diffraction grating manufacturing methods. It has been proposed that it can be easily obtained.

然し乍ら祈る方法く、よるも回折格子を m期−へ )が1o o ois度又はその以下である本のと  
  ・・して得るのは極めて困難であった。因みに上述
せる方法による場合、レーザ光の波長をλ、感感性性材
層屈折率を鴫とすると者1回折格子を。
However, in order to pray, the diffraction grating (to the m period) is less than or equal to 1 o ois degrees.
It was extremely difficult to obtain... Incidentally, in the case of the method described above, if the wavelength of the laser beam is λ and the refractive index of the sensitive material layer is λ, then the number of diffraction gratings is 1.

Δ11/2■ て与えられる最小周期A、を有するもの
として得ることが出来るも、レーず光として比較的値い
波長を有するkm −Cdイオン・レーず光(その波長
は52soi)を用い、又感光性材層として履折率鳳が
1であるものを用いても、最小周期A、が16zslで
しか得らいないものであった。
Although it can be obtained with a minimum period A given by Even if a photosensitive material layer having a refractive index of 1 was used, a minimum period A of only 16 zsl could be obtained.

依って本脅明は上達せる所望事項を賽易に満足せしめ得
るflIllLな回折格子のl1tiCを提案せんとす
るものて以下靜違する所より明らかとなるであろう。
Therefore, it will become clear from what follows that this threat is intended to propose a flIllL diffraction grating l1tiC that can easily satisfy the desired improvements.

菖1−は本願I11香lのs@cよるllN格子の一法
の一例を示し、平らな生肉1を有する基1[2を予め用
意しくll51WAム)1画してその基轍2の主−1上
k例えばム1てなる蟲酸化性層Sをそれ自体は全知の真
空蒸着、スパッタリング等によって形成する(第1 l
AB )。
Iris 1- shows an example of a method of the llN lattice according to s@c of the present application I11. -1 For example, an oxidizing layer S consisting of a layer S is formed by vacuum evaporation, sputtering, etc., which is known in itself (first l
AB).

次に墨酸化性層墨上に1例えば7オ)vシストてなる@
Wを有するマスク用ストツイプ状体鵬の多数が周期2A
を以って配列されてなるストライプ状格子パターンを有
するマスク用格子Mを、それ自体は全知の例えばフォト
レジスト層に対する例え43・−041イをンレーデ光
、ムrレーず党等のレーず光による干渉縞の露光逃場そ
れに絖<aS処1を含んで形成する(jlllllc)
。但しこの場合ストライブ状体−の暢Wは後述する酸化
物線状体gの@Dとの関″1’W−A+Dなる関係の得
られる値に選ばれている。
Next, on the ink oxidizing layer, 1, for example, 7 o) v cysts are formed.
Many of the striped body parts for masks with W have a period of 2A.
A mask grating M having a striped grating pattern arranged in the form of a mask grating M is an omniscient analogy to, for example, a photoresist layer. The exposure escape of the interference fringes is formed by including the interference pattern 1 (jllllllc)
. However, in this case, the width W of the stripe-like body is selected to a value that provides the relationship "1'W-A+D" with @D of the oxide linear body g, which will be described later.

次にマスタ用格子Mをマスクとせる墨酸化性層Sに対す
るそれ自体は公知の化学エツチング処暑、プラズマエツ
チング逃場等のエツチングam<より、易酸化性層重の
iスタ用格子Mの多数の!スフ用ストツイグ状体閣下の
OKよる多数の易酸化性材ストライプ状体りを以って構
成せる1酸化性層葛から形成された周期2Aのストライ
プ状格子パターンを有する島酸化性層Sの#科による墨
酸化性材格子Hを形成する(JIIIID)。
Next, the black oxidizable layer S using the master grating M as a mask is etched by a known chemical etching treatment, plasma etching, etc. ! # of an island oxidizable layer S having a striped lattice pattern with a period of 2A formed from a mono-oxidizing layer consisting of a large number of easily oxidizable material stripes according to His Excellency's OK. A black oxidizing material lattice H is formed by the family (JIIID).

次ICVスク用格子Nをマスクとせる態様を以晶酸化性
材格子Hを構成せる墨酸化性材ストライプ状体りの夫々
につ11.それをその相対向する繻1及び第2の儒Ii
5及び6儒より酸化し。
11. Next, the manner in which the ICV screen grid N is used as a mask is explained for each of the black oxidizing material stripes forming the crystal oxidizing material lattice H. It is the first and second Confucian II that oppose it.
Oxidized from 5 and 6 years old.

斯くて墨酸化性材ストライプ状体りの第1及び1112
の儒1i11L7及び口を、晶酸化性材ストライプ状体
りを構威せる材料の酸化物てなる幅りを有する纂1及び
JII2の酸化物線状体9及び10に彫威し、Jl<て
酸化物線状体91び10を共#cll化物−状体gとす
ると会1幅りを有する酸化−線状体gの多数が周期Aを
以って配列されてなる線状−ターンを有する酸化物格子
Gを形成する(菖1−1)。
Thus, the first and 1112 striped bodies of black oxidizing material
The oxide linear bodies 9 and 10 of 纒1 and JII2 having widths made of oxide of the material constituting the crystalline oxidizing material stripe-like body are carved into the oxide linear bodies 9 and 10 of Jl< When the oxide linear bodies 91 and 10 are defined as a co-cll compound g, a linear turn is formed by arranging a large number of oxidized linear bodies g each having a width of 1 with a period A. An oxide lattice G is formed (Iris 1-1).

次にマスタ用格子麓を鳥酸化性材格子H上より瞼★しく
III■F)、I!いて墨酸化性材格子Hに対するエツ
ナyl:i11度が酸化物格子Gのそれに比し大である
というエッチャントを層いたエッチンダ処11例えば易
酸化性格子Hがムjでなり、l!つて酸化物楊子ati
shi酸化物である楊舎1例えばCCj4iIスを用い
たプラズマエラをンダ処暑をなし、易酸化性格子Hを榔
威せる墨酸化性材ストライプ状体りの夫々につ舎その酸
化物線状体9及び10以外の領域を基板!上より除去す
る(11111図G)。
Next, attach the foot of the master grid to the top of the bird oxidizing material grid H (III■F), I! For example, if the etchant layer 11 is coated with an etchant in which the etchant yl:i11 degree for the black oxidizing material lattice H is larger than that for the oxide lattice G, then the easily oxidizable lattice H becomes muj, and l! oxide yang ati
The oxidizing material has a striped body, which heats up the plasma elastomer using an oxide, for example CCj4iI, and makes the oxidizable lattice H stronger. Areas other than 9 and 10 on the board! Remove from above (Figure 11111G).

斯くてIIIIIGK示す如含基板1上に周期Aの格子
パターンを有する酸化物格子Gが形成されてなる構成を
有する目的とせる回折格子を得る。
In this way, a desired diffraction grating having a structure in which an oxide grating G having a grating pattern with a period A is formed on a substrate 1 as shown in IIIGK is obtained.

以上が本願1m1番醐0−例による回折格子のIl法の
一例であるが、斯る製法(よって得られる$1119(
HC示す回折格子によれば、その酸化物格子Gにより、
回折格子としての機能が得られること明らかである。
The above is an example of the Il method for the diffraction grating according to the 1m1 No. 0-example of the present application.
According to the diffraction grating showing HC, due to its oxide lattice G,
It is clear that the function as a diffraction grating can be obtained.

従って11111&cて上述せる本lI@によるII法
によれば、a祈格子としての機能の得られる回折格子を
得ることが出来るが、その−新格子の周期Aがiスフ層
格子Mを形成する工@(III−c)<@ける!スフ用
ストツイプ状体mの幅Wと酸化物格子Gを形成する工程
(纂1図m)Iける酸化物線状体gの幅りとにより(W
−D)   ゛て表わ専れるものとして決められるもの
である。
Therefore, according to the II method according to the book lI@ mentioned above in 11111&c, it is possible to obtain a diffraction grating that can function as an a-ply grating. @(III-c)<@Keru! Due to the width W of the strip-shaped body m for fabric and the width of the oxide linear body g in the process of forming the oxide lattice G (Summary 1, Figure 1 m), (W
-D) ゛It is decided as something that is expressed exclusively.

この為−新格子の周期Aを、!スフ用格子Mを形成する
ニーに旋て!スフ用ストライプ状体鵬の@Wを最小寸法
″r!形成するとした場合に於けるその最小寸法幅以下
に形成し得、しかもその周期Aは、これを鹸化物格子G
l形成する1薯に旋ける駿化処聰の時間を大として酸化
物線状体厘の幅りを大とするに応じて小となるものであ
る。
For this reason - the period A of the new lattice,! Turn it around the knee to form the lattice M for the sufu! If @W of the striped body for fabric is formed with the minimum dimension "r!", it can be formed to have a width smaller than the minimum dimension width, and its period A is smaller than that of the saponide lattice G.
It becomes smaller as the width of the oxide linear body becomes larger by increasing the time required for the spinning process to form a loaf.

値って嬉IIIにで上達せる本原第1爵よるlI織Cよ
れば、マスク用格子Mを冒11にで曽違せる回折格子を
得る方法と同機の方法によって形成し得ることkより欺
く形成して目的とせる回折格子を得るものとした場合、
その回折格子を、馬Jlljが、冒頭にて前述せる方f
&によって得られる回折格子の周期に比し格段的に小で
ある。1ooo1mm又はそれ以下であるものとして得
ることが出来るという大なるIfli像を有するもので
ある。
According to the 1I Ori C by the 1st Earl Motohara, who can improve his value to the best of his ability, there is a method for obtaining a diffraction grating that is 11 times different from the mask grating M, and that it can be formed by the same method. When forming a desired diffraction grating,
The diffraction grating was described by Ma Jllj at the beginning.
This is much smaller than the period of the diffraction grating obtained by &. It has a large Ifli image that can be obtained as 1 mm or less.

次に本願第2番目の一例による回折格子の製法の一例を
遮べるに、ll51111ム〜G4Cて上述せると同様
の工程を採って、第2図ムに示す如く。
Next, to explain an example of the method of manufacturing a diffraction grating according to the second example of the present application, steps similar to those described above are adopted for Il51111m to G4C, as shown in Fig. 2m.

基板2上に周期Aの格子パターンを有する酸化物格子G
が形成されてなる構成を得る・次に第2図Bに示す如く
、酸化物格子Gをマスクとせる基板2に対するそれ自体
は公知のエツチング処瑞により基板2の主面1儒に、基
板2の酸化物格子Gの多数の酸化−線状体g下の領域に
よる多数の基板材線状体g′を以って構成せる周期lの
線状格子パターンを有する基板2の材料による基板材格
子G′を形成し、絖いて藻2iCに示す如く酸化物格子
Gを基板材格子G′上より除去し、斯くて目的とする回
折格子を得る。
Oxide lattice G having a lattice pattern of period A on substrate 2
Next, as shown in FIG. 2B, the substrate 2 with the oxide lattice G as a mask is etched on the main surface of the substrate 2 by a known etching process. A substrate material lattice made of the material of the substrate 2 having a linear lattice pattern with a period l constituted by a large number of substrate material linear bodies g' formed by a large number of oxide lattice G of the oxide-linear body g'G' is formed, and then the oxide grating G is removed from above the substrate grating G' as shown in Fig. 2iC, thus obtaining the desired diffraction grating.

以上が本願第2番目の畿明による回折格子の製法の一例
であるが、斯る製法によって得られる1112図Cに示
す回折格子によれば、その基板材格子G′によりWXA
折格子としての機−が得られること明らかである。
The above is an example of the method of manufacturing a diffraction grating according to Kimei, which is the second in this application. According to the diffraction grating shown in Figure 1112C obtained by such a manufacturing method, the WXA
It is clear that the structure can be used as a folded lattice.

従って第2図にて上述せる本1lv1による製法によれ
ば1回折格子としての機能の得られるー折格子を得るこ
とが出来るが、その周期Aが、嬉1■にて上達せる場合
とM嫌に、1スタ用格子Mを形成する工場Kmけるマス
ク用ストライプ状体−〇暢Wと酸化物格子arts威す
る工Sに験ける酸化物−状体冨の@Dとkより(W−D
 )で秦わ8れるものとして決められるものである。ζ
Φ為−新格子の周期Aを縞1′図にて上遠せるー(に小
にし得るものである。
Therefore, according to the manufacturing method according to Book 1lv1 described above in Fig. 2, it is possible to obtain a folded grating that can function as a single diffraction grating, but the period A can be improved at 1. From @D and k (W-D
). ζ
Because of Φ, the period A of the new lattice can be made smaller in the fringe 1' diagram.

依って第211[て上述せる本願1II2書■の穐―に
よ4m渋くよるも、詳am@はこれを省略するも、嬉1
m111Cて上述せる本願繻1番−の1−と同様の優れ
た畳徽を有するものである。
Therefore, the 211th article is based on the above-mentioned book 1 II book 2 of the present application, but although this is omitted in the details,
m111C has the same excellent tatami texture as the above-mentioned Patent Application No. 1-1.

崗上遠に論ては本願亀1及び1111喬■の発明の夫々
につ会−例を述べたに過ぎず1本発明の精神を脱するこ
となしに種々の変量変更をなし得るてあろう。
The above discussion is merely an example of the inventions of Benganme 1 and 1111 Qiao, and various changes may be made without departing from the spirit of the invention. .

【図面の簡単な説明】[Brief explanation of drawings]

菖1■ム〜Gは本願I/I!1番lのm@による回折格
子の81機の一例を示す鵬次の工場に於ける鴫曹的l1
IIli−,11211ム〜Cは本願112番Iの発明
化よる回折格子の製法の一例を示す111次の工5uc
hける略縁的断tII@lである。 ■中2は基板、Sは鳥酸化性層1Mはマスク用格子、H
はTo酸酸化性格格子hは易酸化性材ストライプ状体、
7及び8は儒画部、?、10及びgは酸化−纏状体%G
は酸化物格子、G′は基板材格子を夫々示す。 出願人 日本電値電話公社 第1図 第1図
Iris 1■Mu~G is the original I/I! The 1st model of the 81st diffraction grating based on the 1st m@ at Hoji's factory.
IIli-, 11211-C are 111th-order process 5uc showing an example of the method for manufacturing a diffraction grating according to the invention of No. 112 I of the present application.
It is almost a close cutoff tII@l. ■Middle 2 is the substrate, S is the bird oxidation layer 1M is the mask grid, H
is To acid oxidizing lattice h is easily oxidizable material striped body,
7 and 8 are Confucian painting club,? , 10 and g are oxidized mass %G
indicates an oxide lattice, and G' indicates a substrate material lattice. Applicant: Nippon Electric Telephone Public Corporation Figure 1 Figure 1

Claims (1)

【特許請求の範囲】 t !!板の主面上に易酸化性層を形成する工程と、 ・ 骸晶酸化性層上に周期2Aのストライプ状格子パタ
ーンを有するマスク用格子を形成する工場と、′   
   ・“ 鋏マスク用格子をマスクとせる上記墨駿柘−−−■シ 化性層に対するエツチング処理により上記易酸化性層か
ら形成された・周期2Aのストライプ状格子パI−ンを
有する上記易酸化性層の材料による墨酸化性材格子を形
成する工場と。 上記島酸化4!I材格子に対する酸化処ll/Icより
轟鎮易鐙化性材格子を構成せる易酸化性材ストライプ機
体の夫々につきその相対向する第111Lび第2の儒画
部を纏1及び纂2の酸化物線状体に形成して周期Aの線
状格子パターンを有する酸化物格子を形成する工程と。 上記易酸化性材格子に対するエツチング処理により当該
墨酸化性材格子を構成せる轟鹸化性材ストライプ状体の
夫々につき上記第1及び第2の酸化物線状体以外の領槍
を除去する工場とを含む事を特徴とする回折格子の製法
。 2 基板の主面上に易酸化性層を形成する工程と。 該晶酸化性層上に周期2Aのストライプ状格子パターン
を有するマスク用格子を形成する工程と。 咳マスク用格子をマスクとせる上記Toal化性層に対
するエツチング処場により上紀畠酸化性層から形成され
た周期2Aのストライプ状格子パターンを有する上記易
酸化性層の材料による墨酸化性材格子を形成する工程と
。 上記易酸化性材格子に対する酸化地塊により幽練易酸化
性材格子を構成せる易酸化性材ストライプ状体の夫々に
つきその相対向するJll及び第2のN面部をtsl及
び第2の酸化−1軟体に形成して周期Aの線状格子パタ
ーンを有する酸化物格子を形成する工程と、上記晶酸化
性材格子に対するエツチング逃場により蟲鍍墨酸化性材
格子を構成せる易酸化性材ストライプ状体の夫々につき
その上記ill及び82の酸化物線状体以外の領域を除
去する工1と。 上記酸化物楊子をマスクと甘る111M板に対するエツ
チングam<より上記基板の主画側に局Jllの鐘状格
子パターンを有する上記基板の材料による基@#格子を
形成する工程とを含む事を轡徽とする回折格子の製法。
[Claims] t! ! a step of forming an easily oxidizable layer on the main surface of the plate; a factory forming a mask grating having a striped grating pattern with a period of 2A on the skeleton oxidizable layer;
・“The above-mentioned Sumishunsho using the lattice for scissor mask as a mask” ・The above-mentioned easy-to-understand film having striped lattice pins with a period of 2A formed from the oxidizable layer by etching the silica layer A factory that forms a black oxidizable material lattice using the material of the oxidizing layer.The oxidation treatment of the above-mentioned island oxidation 4! forming an oxide lattice having a linear lattice pattern with a period A by forming the 111L and the second Confucian pattern portions facing each other in the oxide linear bodies of the first and second oxide bodies, respectively; a factory in which the oxidizable material lattice is subjected to an etching process to remove the rays other than the first and second oxide linear bodies from each of the saponifiable material striped bodies constituting the black oxidizable material lattice; A method for manufacturing a diffraction grating characterized by comprising: 2. Forming an easily oxidizable layer on the main surface of a substrate. Forming a mask grating having a striped grating pattern with a period of 2A on the crystal oxidizable layer. Step: Ink oxidation by the material of the easily oxidizable layer having a striped grating pattern with a period of 2A formed from the Jokihata oxidizable layer by an etching treatment for the toalizable layer using the cough mask grating as a mask. a step of forming a lattice of easily oxidizable material.For each of the easily oxidizable material stripes forming the lattice of easily oxidized material made of the oxidized ground mass for the lattice of easily oxidized material, Jll and the second N are opposed to each other. A step of forming a surface portion into TSL and a second oxidation-1 soft body to form an oxide lattice having a linear lattice pattern with a period A, and etching relief for the crystalline oxidizing material lattice to form an ink oxidizing material. Step 1 of removing the area other than the ill and 82 oxide linear bodies of each of the easily oxidizable material stripes constituting the lattice. Etching the 111M plate using the oxide toothpick as a mask. A method for manufacturing a diffraction grating, comprising the step of forming a base@# grating using the material of the substrate, having a bell-shaped grating pattern of Jll on the main image side of the substrate.
JP10025981A 1981-06-27 1981-06-27 Manufacture of diffraction grating Pending JPS582807A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10025981A JPS582807A (en) 1981-06-27 1981-06-27 Manufacture of diffraction grating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10025981A JPS582807A (en) 1981-06-27 1981-06-27 Manufacture of diffraction grating

Publications (1)

Publication Number Publication Date
JPS582807A true JPS582807A (en) 1983-01-08

Family

ID=14269213

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10025981A Pending JPS582807A (en) 1981-06-27 1981-06-27 Manufacture of diffraction grating

Country Status (1)

Country Link
JP (1) JPS582807A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647513B1 (en) 2005-11-08 2006-11-23 한국과학기술원 Nano-pattern mold for wire grid polarizers and method for forming thereof
CN102540297A (en) * 2010-12-15 2012-07-04 电子科技大学 Preparation method of micron-sized anti-reflection metal grating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100647513B1 (en) 2005-11-08 2006-11-23 한국과학기술원 Nano-pattern mold for wire grid polarizers and method for forming thereof
CN102540297A (en) * 2010-12-15 2012-07-04 电子科技大学 Preparation method of micron-sized anti-reflection metal grating

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