JPS5825628Y2 - Charge-coupled imaging device - Google Patents
Charge-coupled imaging deviceInfo
- Publication number
- JPS5825628Y2 JPS5825628Y2 JP1978138506U JP13850678U JPS5825628Y2 JP S5825628 Y2 JPS5825628 Y2 JP S5825628Y2 JP 1978138506 U JP1978138506 U JP 1978138506U JP 13850678 U JP13850678 U JP 13850678U JP S5825628 Y2 JPS5825628 Y2 JP S5825628Y2
- Authority
- JP
- Japan
- Prior art keywords
- charge
- imaging device
- ccd
- image
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003384 imaging method Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims description 3
- 238000001444 catalytic combustion detection Methods 0.000 description 17
- 238000001514 detection method Methods 0.000 description 5
- 206010073261 Ovarian theca cell tumour Diseases 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 208000001644 thecoma Diseases 0.000 description 2
- IGRCWJPBLWGNPX-UHFFFAOYSA-N 3-(2-chlorophenyl)-n-(4-chlorophenyl)-n,5-dimethyl-1,2-oxazole-4-carboxamide Chemical compound C=1C=C(Cl)C=CC=1N(C)C(=O)C1=C(C)ON=C1C1=CC=CC=C1Cl IGRCWJPBLWGNPX-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【考案の詳細な説明】
本考案は、フレーム転送方式に依る電荷結合型撮像装置
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a charge-coupled imaging device using a frame transfer method.
電荷結合素子（以下ＣＣＤと略す）に光検出機能とアナ
ログ信号転送機能とを持つ事から固体撮像装置に用いら
れつつある。Charge-coupled devices (hereinafter abbreviated as CCDs) are being used in solid-state imaging devices because they have a photodetection function and an analog signal transfer function.
その−例を第１図に示す同図に於て、１，１・・・・・
・は多数配列された光検出ＣＣＤ列で、夫々の列は光検
出機能を持たせる為に多結晶シリコン等の透明材料から
戒る光検出電極２，２・・・・・・とこの光検出電極２
．２・・・・・・に依って検出された光に応答して生じ
る電荷を矢印で示す図の左方向へ転送させる為の転送電
極３，３・・・・・・が交互に配置されている。An example of this is shown in Figure 1, where 1, 1...
- is a photodetection CCD array arranged in large numbers, and each column has photodetection electrodes 2, 2 made of transparent material such as polycrystalline silicon to have a photodetection function, and this photodetection Electrode 2
．． Transfer electrodes 3, 3... are arranged alternately to transfer the charges generated in response to the light detected by the transfer electrodes 3, 3... to the left in the figure indicated by the arrow. There is.
これ等の検出電極２，２・・・・・・並びに転送電極３
，３・・・・・・は夫々適宜２相の転送信号源φ１．φ
２に連っている。These detection electrodes 2, 2... and transfer electrode 3
, 3... are appropriate two-phase transfer signal sources φ1. φ
It is connected to 2.
４は各ＣＣＤ列１，１・・・・・・の左端に縦方向に設
けられた転送ＣＣＤ列で、別の転送信号源（Ｐｌ、（ｐ
２に夫々に連った転送電極５，５・・・・・・がら戒っ
ており、その終端には拡散領域６が設けられていて転送
されて来る電荷に応じた電気信号が出力電極７がら取り
出される。Reference numeral 4 denotes a transfer CCD column provided vertically at the left end of each CCD column 1, 1, . . .
The transfer electrodes 5, 5, etc. connected to the terminals 2 and 2 are connected to each other, and a diffusion region 6 is provided at the end of each of the transfer electrodes 5, 5. It is taken out completely.
而して夫々の光検出ＣＣＤ列１，１・・・・・・で画像
に応じた光信号が電荷の形で得られ、その電荷が夫々左
方向へ転送されて転送ＣＣＤ列４に到達し、更にこのＣ
ＣＤ列４に依って拡散領域６まで転送されてシリアルな
画像信号を出力電極７に得ている。Thus, a light signal corresponding to the image is obtained in the form of an electric charge in each of the photodetection CCD columns 1, 1, . , and further this C
The signal is transferred to the diffusion region 6 by the CD array 4, and a serial image signal is obtained at the output electrode 7.
ところでテレビジョン等の撮像装置に利用する目的のも
のは、高度の解像度、鮮明な画面が要求される為、光検
出を行なう光検出ＣＣＤ列１，１・・・・・・の本数が
２５０本以上或いは５００本以上必要であり、このよう
な大規模なアレーのＣＣＤ撮像素子のチップサイズは現
在の微細パターン技術をもってしても一辺がｌＱｍｍを
越える大きなものになる。By the way, for the purpose of use in imaging devices such as televisions, high resolution and clear screens are required, so the number of light detection CCD arrays 1, 1, etc. that perform light detection is 250. The chip size of such a large-scale array CCD image sensor is large, with each side exceeding 1Q mm even with the current fine pattern technology.
即ち１ｃｍ平方以上の面に画像を結像する必要がある。That is, it is necessary to form an image on a surface of 1 cm square or more.
ところが通常のレンズを用いて１ｃｍ平方以上の面に画
像を結像させると、第２図に示すように周辺部で像がぼ
やける。However, when an ordinary lens is used to form an image on a surface of 1 cm square or more, the image becomes blurred at the periphery, as shown in FIG.
これは第２図で物体ＡをレンズＢでＣＣＤＣＣ撮像素子
結像させようとするとレンズの主軸付近では正しく像を
結ぶが、主軸からはなれてくると物体Ａのａ点の像はレ
ンズのコマ収差とよばれる現象によってＣＣＤ面上では
なくｂ点で結像し、それゆえ、ＣＣＤ面上ではａの像は
Ｃの如くぼやけた像になってしまうがらである。This is because in Figure 2, when object A is imaged on the CCDC image sensor using lens B, the image is correctly formed near the principal axis of the lens, but as it moves away from the principal axis, the image at point a of object A is due to the coma aberration of the lens. Due to a phenomenon called point b, the image is formed not on the CCD surface but at point b, and therefore the image at point a becomes a blurred image like point C on the CCD surface.
したがってこのような方法でえられた画像は周辺部と中
央部とで画像の分解度、鮮明度がことなりみにくいもの
となる。Therefore, the image obtained by this method has different resolution and sharpness between the peripheral part and the central part, making it difficult to see.
本考案はこのような問題点を解決する事を目的として為
されたものであって第３図にその詳細が示されている。The present invention was devised to solve these problems, and its details are shown in FIG.
この第３図の図番は第１図のそれと全て対応している。All the figure numbers in FIG. 3 correspond to those in FIG. 1.
第１図と異るところは、各光検出ＣＣＤ列１，１・・・
・・・の光検出電極２，２・・・・・・の電極巾Ｘ並び
に電極長ｙを周辺部に於て中央部より夫々広く設定した
ところにある。The difference from FIG. 1 is that each photodetection CCD array 1, 1...
The electrode widths X and electrode lengths y of the photodetecting electrodes 2, 2, . . . are set wider at the periphery than at the center.
即ち各ＣＣＤ列１゜１・・・・・・の中央部に於ては光
検出電極２，２・・・・・・の長さｙは両端部のそれｙ
′に比して短く、また中央部に位置するＣＣＤ列１，１
・・・・・・の検出電極２，２・・・・・・の巾Ｘは両
端部のそれＸ′より狭く設定されている。That is, at the center of each CCD row 1゜1..., the length y of the photodetecting electrodes 2, 2... is equal to that at both ends.
' CCD rows 1, 1, which are shorter than 1 and located in the center.
The width X of the detection electrodes 2, 2, . . . is set narrower than that at both ends X'.
その結果、ＣＣＤ列の周辺部に於ける画像のぼやけは周
辺部の光検出部の面積が大きく設定されているので、打
ち消されてしまう。As a result, the blurring of the image at the periphery of the CCD array is canceled out because the area of the light detection section at the periphery is set to be large.
従って本考案に依るＣＣＤ撮像装置をテレビジョンカメ
ラに使用した場合、比較的簡単なレンズ系を用いてもレ
ンズのコマ収差に依る画像の中央部と周辺部との画質の
ムラは改善し得る。Therefore, when the CCD imaging device according to the present invention is used in a television camera, it is possible to improve the unevenness in image quality between the center and periphery of the image due to the coma aberration of the lens even if a relatively simple lens system is used.
第１図は現存のＣＣＤ撮像装置の平面図並びに要部の断
面図、第２図はレンズに依る光の収束状態を示す光学系
図、第３図は本考案装置の平面図並びに要部の断面図で
あって、１は光検出ＣＣＤ列、２は光検出電極、３は転
送電極、４は転送ＣＣＤ列、を夫々示している。Fig. 1 is a plan view and a sectional view of the main parts of an existing CCD imaging device, Fig. 2 is an optical system diagram showing the state of convergence of light by a lens, and Fig. 3 is a plan view and a sectional view of the main parts of the device of the present invention. In the figure, 1 indicates a photodetection CCD column, 2 a photodetection electrode, 3 a transfer electrode, and 4 a transfer CCD column.
Claims (1)
検出を行いその検出光に依る電荷信号を転送する電荷結
合素子列を多数列配列すると共に、該各電荷結合素子列
の光検出電極の電極巾並びに電極長を、周辺部のそれを
中央部のそれより広く設定して戊る電荷結合型撮像装置
。In a charge-coupled imaging device using a frame transfer method, a large number of charge-coupled device rows are arranged to detect light and transfer charge signals based on the detected light, and a photodetection electrode of each charge-coupled device row is arranged. A charge-coupled imaging device in which the electrode width and length are set wider at the periphery than at the center.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1978138506U JPS5825628Y2 (en) | 1978-10-04 | 1978-10-04 | Charge-coupled imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1978138506U JPS5825628Y2 (en) | 1978-10-04 | 1978-10-04 | Charge-coupled imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5553361U JPS5553361U (en) | 1980-04-10 |
| JPS5825628Y2 true JPS5825628Y2 (en) | 1983-06-02 |
Family
ID=29111747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1978138506U Expired JPS5825628Y2 (en) | 1978-10-04 | 1978-10-04 | Charge-coupled imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5825628Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168402U (en) * | 1982-05-06 | 1983-11-10 | 株式会社マキタ電機製作所 | Ruler device for guiding workpieces |
-
1978
- 1978-10-04 JP JP1978138506U patent/JPS5825628Y2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5553361U (en) | 1980-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10440301B2 (en) | Image capture device, pixel, and method providing improved phase detection auto-focus performance | |
| JP2739586B2 (en) | Color solid-state imaging device | |
| US7456881B2 (en) | Method and apparatus for producing Bayer color mosaic interpolation for imagers | |
| JPH1084507A (en) | Active picture element image sensor and its manufacture | |
| JPH10136391A (en) | Solid-state image pickup device | |
| JPH0636599B2 (en) | Light detection system | |
| TWI235606B (en) | Solid state image pick up device | |
| JP4579043B2 (en) | Solid-state imaging device and imaging apparatus | |
| JP2004103785A (en) | Solid state imaging device | |
| JPH11205532A (en) | Solid-state image pickup device | |
| JPS5825628Y2 (en) | Charge-coupled imaging device | |
| CN213522136U (en) | Image sensor and imaging device | |
| JPH0637289A (en) | Solid-state image sensing device | |
| JPH09116815A (en) | Solid-state image pickup device | |
| JPH0574945B2 (en) | ||
| US7460165B2 (en) | Photo-array layout for monitoring image statistics | |
| JPH06104418A (en) | Solid-state image sensing device | |
| JPH05190828A (en) | Solid-state image-sensing element | |
| JP6789699B2 (en) | Solid-state image sensor and image sensor | |
| JP7047907B2 (en) | Image sensor and image sensor | |
| JP2609133B2 (en) | Solid-state imaging device | |
| JPH04218965A (en) | Solid state pickup device | |
| JPH10289993A (en) | Solid-state image pickup device and its manufacture | |
| JP2900382B2 (en) | Solid-state imaging device | |
| JPH0831587B2 (en) | Method of manufacturing solid-state image sensor |