JPS58223247A - Setting method for brightness of electron gun - Google Patents

Setting method for brightness of electron gun

Info

Publication number
JPS58223247A
JPS58223247A JP10716382A JP10716382A JPS58223247A JP S58223247 A JPS58223247 A JP S58223247A JP 10716382 A JP10716382 A JP 10716382A JP 10716382 A JP10716382 A JP 10716382A JP S58223247 A JPS58223247 A JP S58223247A
Authority
JP
Japan
Prior art keywords
brightness
electron gun
cathode
beam current
current value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10716382A
Other languages
Japanese (ja)
Other versions
JPS6335064B2 (en
Inventor
Isao Sasaki
勲 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10716382A priority Critical patent/JPS58223247A/en
Publication of JPS58223247A publication Critical patent/JPS58223247A/en
Publication of JPS6335064B2 publication Critical patent/JPS6335064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/24Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H01J37/243Beam current control or regulation circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To stabilize the brightness of an electron gun and improve the working ratio of an electron beam plotting device by detecting all beam current when used and controlling all beam current so that the current value can match the preset current value to the desired brightness based on the measurement result. CONSTITUTION:The operation temperature of a cathode 2 is held at 1,500 deg.C or more. In this status, the brightness of an electron gun is measured by applying proper bias between the cathode 2 and a Wehnelt electrode 4 and all beam current in this case is measured. Then all beam current for the brightness is measured in the same way by properly varying the bias and these types of information are stored in the CPU9. Furthermore, when the electron gun is used actually, a bias resistor 8 is varied so that the detected current value by an ammeter 10 can match the preset current value to the desired brightness stored in the CPU9. As a result, the brightness of an electric gun 1 can easily and stably be set to the desired size.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、電子ビーム描画製質等に用いらJする電子銃
の輝度設定方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for setting the brightness of an electron gun used for electron beam lithography quality.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

電子ビーム描画装置では、高速描画r可能とする次め電
子銃の高輝度化が要求され、また高精度描画?可能とす
るため輝度の安定化が要求される。電子ビーム描画装置
に用いられる電子銃は、通常カソード、ウェネルト電極
お工びアノードからなる3電極構造に形成されでおり、
最近高輝度化?はかる目的でそのカソードと1゜て単結
晶ランタンへキサポライド(LaB6)が用いられてい
る。この種の電子銃では、カソード温度やバイアス電圧
等の僅かな変化に↓っ′Cも輝度が大きく変化する。し
たがって、輝度の安定化?はかるには、使用時における
実際の輝度r求め、この輝度が所望の大きさとなる。L
う各種の条件r設定し直さなければならない。
In electron beam lithography equipment, high brightness of the electron gun is required to enable high-speed lithography, and high-precision lithography is required. To make this possible, stabilization of brightness is required. The electron gun used in an electron beam lithography system is usually formed into a three-electrode structure consisting of a cathode, a Wehnelt electrode, and an anode.
Has it become brighter recently? For measurement purposes, single crystal lanthanum hexapolide (LaB6) is used at 1° with the cathode. In this type of electron gun, the brightness changes greatly due to slight changes in cathode temperature, bias voltage, etc. Hence the stabilization of brightness? To measure it, find the actual brightness r during use, and this brightness will be the desired level. L
Various conditions must be set again.

電子銃の輝度?求めるには、描画面上において電子ビー
ムの直径tシャープエツジ法により測定し、さらにその
電流値を測定する必要があるが、これらの測定は非常に
煩雑であり、その測定に要する時間も短くはない。また
、前述しに工うにカソード温度やバイアス等の僅かな変
化によっても輝度が大きく変化するため、これらの条件
が変化する毎に上記測定?行う必要がある。このため、
電子銃の輝度の安定化?はかろうとすると、電子ビーム
描画装置の稼動率低下?招き、ひいてはスルーブツトの
低下ケ招いた0 第1図(a)〜(c)は先端曲率15(μm)のLaB
6カンード?用いた電子銃の輝度と温度、バイアスお↓
び全ビーム電流とのそれぞれの関係ケ示す特性図である
0第1図(a)に示す輝度βの温度依存性においてn、
I Bt  6 Bgはバイアス抵抗を意味し B+<Bg<”s である0まA、Tl  + Tt  e Tsはそれぞ
れの輝度が最大となる温度である。1g1図(b)に示
す輝度βのバイアス依存性においてT1mT1  。
Brightness of electron gun? To find this, it is necessary to measure the diameter of the electron beam on the drawing surface using the sharp edge method, and also to measure the current value, but these measurements are very complicated and the time required for the measurement is short. do not have. Also, as mentioned above, the brightness changes greatly due to slight changes in cathode temperature, bias, etc., so the above measurements should be performed every time these conditions change. There is a need to do. For this reason,
Stabilization of electron gun brightness? Does the operation rate of the electron beam lithography system decrease when trying to measure it? Figures 1 (a) to (c) show LaB with a tip curvature of 15 (μm).
6 candos? Brightness, temperature, and bias of the electron gun used↓
In the temperature dependence of brightness β shown in Figure 1(a), which is a characteristic diagram showing the relationship between n and total beam current, n,
I Bt 6 Bg means bias resistance, 0 to A where B+<Bg<”s, and Tl + Tt e Ts are the temperatures at which the respective brightness is maximum.1g1The bias of brightness β shown in Figure (b) T1mT1 in dependence.

T、は同図(a)のそれと同一であり、輝度が最大とな
るバイアスは温度によらず略等しい。第1図(C)に示
す輝度βの全ビーム電流依存性において’r、s T1
  + ’r、は同図(&) 、 (b)のそれと同一
であり、温度が高くなる程輝度が最大となる全ビーム電
流は増加している。この第1図(a)〜(、)からも判
るように輝度βはパラメータとしての温度、バイアス、
全ビーム電流の高次関数であり、さらにその形状は各パ
ラメータに依存性があり、したがって必要な輝度ケ温度
、バイアス。
T is the same as that in FIG. 3A, and the bias at which the brightness is maximized is approximately the same regardless of temperature. In the total beam current dependence of the brightness β shown in Fig. 1(C), 'r,s T1
+'r is the same as that in (&) and (b) of the same figure, and the total beam current at which the brightness is maximum increases as the temperature increases. As can be seen from Fig. 1 (a) to (,), the brightness β depends on the temperature and bias as parameters.
It is a higher-order function of the total beam current, and furthermore its shape is dependent on each parameter, hence the required brightness, temperature, bias.

全ビーム電流のいずれからも一義的に求めることは困難
である。また、ここには−例しか示していないが、それ
ぞれの曲線にはカソードに↓るバラツキがかなり有り、
必要な輝度の条件?求めることはエリ以上に困難であっ
た。
It is difficult to determine it uniquely from any of the total beam currents. Also, although only an example is shown here, there is considerable variation in each curve from the cathode.
What brightness conditions do you need? It was even more difficult to ask than Eli.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、単結晶LaB6カソード〒用いた電子
銃の輝度?容易に求めることができ、輝度の安定化?は
かり得ると共に、電子線描画装置の稼動率向上管に寄与
し得る電子銃の輝度設定方法を提供することにある0 〔発明の概要〕 本発明は、単結晶LaB、カソードケ用い皮3電極構造
電子銃の輝度を設定する方法において、上記カソードの
軸方位v<1oo>或いは<310>に設定すると共に
カソード先端直径70〔μm〕以上の平面に加工し、か
つカソード使用温度r1500〔℃〕 以上に設定して
おき、予め上記カソードに流れる全ビーム電流に対する
輝度ケ測定し、使用時に上記全ビーム電流を検出し、こ
の検出電流値と上記測定結果に基づく所望の輝度に対す
る設定電流値とが一致する↓う全ビーム電流依存性する
工うにした方法である0上記に述ベア℃条件、すなわち
軸方位(100)。
The purpose of the present invention is to improve the brightness of an electron gun using a single crystal LaB6 cathode. Brightness stabilization can be easily determined? [Summary of the Invention] The present invention provides a method for setting the brightness of an electron gun, which can be used to measure the brightness of an electron beam, and which can contribute to improving the operation rate of an electron beam lithography system. In the method of setting the brightness of a gun, the axial direction of the cathode is set to v<1oo> or <310>, the cathode tip is machined into a flat surface with a diameter of 70 [μm] or more, and the cathode operating temperature is r1500 [°C] or more. The brightness of the total beam current flowing through the cathode is measured in advance, and the total beam current is detected during use, and this detected current value matches the set current value for the desired brightness based on the measurement results. ↓ This is a method to make the total beam current dependent on the 0 °C condition mentioned above, i.e. the axial orientation (100).

<310>、カソード先端直径70〔μm〕以上。<310>, cathode tip diameter 70 [μm] or more.

カソード使用温度1500(℃、]  以上の条件で電
子銃?用いると、輝度の温度おLびバイアス依存性に関
しては前記第1図(a) 、 (b)に示し九のと同様
に複雑な変化?示し、かつバラツキが見られるが、輝度
の全ビーム電流依存性について見ると非常に単純な関係
が得られる。第2図はこの結果を示す特性図であり、図
中曲線Pはカソード先端平面領域の直径が70〔μ?n
〕2曲線Qは曲線(μ*L)、曲線Rは150 (p 
m )  (7)場4yr。
The cathode operating temperature is 1500 (°C). When an electron gun is used under the above conditions, the dependence of brightness on temperature and bias will undergo complex changes similar to those shown in Figure 1 (a) and (b) above. ?, and some variation is seen, but a very simple relationship is obtained when looking at the dependence of brightness on the total beam current. Figure 2 is a characteristic diagram showing this result, and the curve P in the figure is the cathode tip plane. The diameter of the area is 70 [μ?n
]2 Curve Q is a curve (μ*L), curve R is 150 (p
m) (7) field 4yr.

示している。この図から判る工うにいずれも単調増加で
あり、LaB6カソードの温度が1500〔℃〕 以上
であるならば温度に↓る差異は殆んどなく、第2図の曲
線とよく一致する0また、軸方位が<100>、<31
0)ならばこれにぶる差異も見られない0 かくして前記条件下でLaB、カソードr用いtば、電
子銃の輝度は測定が非常に容易な全ビーム電流から一義
的に求められることになる。
It shows. As can be seen from this figure, all of the curves increase monotonically, and if the temperature of the LaB6 cathode is 1500 [℃] or higher, there is almost no difference in temperature, and the curve closely matches the curve in Figure 2. Axial orientation is <100>, <31
0), then no significant difference is observed.0 Thus, if LaB and cathode r are used under the above conditions, the brightness of the electron gun can be uniquely determined from the total beam current, which is very easy to measure.

なお、カソード先端平面領域の直径が70〔μm〕エリ
小さい場合、輝度の全ビーム電流依存性が前記第1図(
C)に示すのと同様になる0また、70〔μm)以上の
直径であっても軸方位が<100>、<310>以外の
場合にはさらに複雑な変化τ示す。したがって、軸方位
、カンード先端直径お2びカンード温度等は前述した条
件でなければならない。
Note that when the diameter of the cathode tip plane region is 70 μm smaller, the dependence of the brightness on the total beam current is as shown in Fig. 1 (
0 similar to that shown in C) Furthermore, even if the diameter is 70 [μm] or more, if the axis orientation is other than <100> or <310>, a more complicated change τ will occur. Therefore, the axial direction, cand tip diameter, cand temperature, etc. must meet the conditions described above.

〔発明の効果〕〔Effect of the invention〕

本発明に↓れば、電子銃の輝度?容易に測定することが
でき、かつ輝度ケ所望の大きさに容易に設定することが
できる。このため、電子銃の輝度安定化をはかり得ると
共に、描画プロセスの単線化ケはかり得る。そして、輝
度安定化?容易かつ短時間で行い得ることから、電子ビ
ーム描画装置の稼動率向上およびスルーブツト向」−に
寄与I7得る等の効果?奏する。
According to the present invention, what is the brightness of the electron gun? It can be easily measured and the brightness can be easily set to a desired level. Therefore, the brightness of the electron gun can be stabilized, and the drawing process can be made into a single line. And brightness stabilization? Because it can be done easily and in a short time, it contributes to improving the operation rate of electron beam lithography equipment and throughput. play.

〔発明の実施例〕[Embodiments of the invention]

第3図は本発明の一実施例に用いた電子銃およびその制
御系ケ示す概略構成図である0図中1は単結晶LaB6
カソード2、ヒータ3、ウェネルト電極4お工びアノー
ド5からなる電子銃であり、この電子銃1のヒータ3に
はカソード加熱用電源6が接続されている。また、カソ
ード2はその軸方位が<100>に設定され、先端が直
径90〔μm〕の平面に加工されている。ウェネルト電
極4とアノード5との間には図示極性の高圧電源7が接
続され、カソード2とウェネルト電極4との間にはバイ
アス抵抗8が接続されている。そして、このバイアス抵
抗8の抵抗値はCPU9からの制御指令にぶり可変せら
れるものとなっている。なお、図中10はカソード2に
流れる全ビーム電流?検出するための電流計、11は試
料ケ示している。
Figure 3 is a schematic diagram showing the electron gun and its control system used in one embodiment of the present invention.
The electron gun consists of a cathode 2, a heater 3, a Wehnelt electrode 4, and an anode 5. The heater 3 of the electron gun 1 is connected to a power source 6 for heating the cathode. Further, the axial direction of the cathode 2 is set to <100>, and the tip is processed into a flat surface with a diameter of 90 [μm]. A high-voltage power supply 7 with the illustrated polarity is connected between the Wehnelt electrode 4 and the anode 5, and a bias resistor 8 is connected between the cathode 2 and the Wehnelt electrode 4. The resistance value of this bias resistor 8 can be varied based on control commands from the CPU 9. In addition, 10 in the figure is the total beam current flowing through the cathode 2? An ammeter for detection, 11 indicates the sample.

この↓うな構成とし、まずカソード2の使用温度’k1
500〔℃)  以上に保持し、この状態でカソード−
ウェネルト間に適当なバイアスケ印加し、周知の方法に
エリ輝度?測定した。そして、このときの全ビーム電流
?電流計10にて検出した。次に、上記バイアスr適宜
可変し上記と同様にして輝度に対する全ビーム電流の検
出値?測定した。この結果が前記第2図中に示した曲線
Qである。そして、この曲線は最小2乗法に↓り次の3
次式で近似される。
With this ↓ configuration, first the operating temperature of cathode 2 'k1
Maintain the temperature above 500 [℃], and in this state, connect the cathode to
Is it possible to apply an appropriate bias voltage between Wehnelts and adjust the brightness using a well-known method? It was measured. And the total beam current at this time? It was detected with an ammeter 10. Next, change the bias r as appropriate and do the same as above to calculate the detected value of the total beam current with respect to the brightness? It was measured. This result is the curve Q shown in FIG. 2 above. Then, this curve is calculated by the least squares method as follows:
It is approximated by the following formula.

輝度β[AArJ−str)=AIt”+BIt”+C
It+D  −・す(1)ただし、It  は全ビーム
電流の大きさ、A、B。
Luminance β[AArJ-str)=AIt”+BIt”+C
It+D-・S(1)where, It is the magnitude of the total beam current, A, B.

C,Dは係数であり、本発明者等の実験によればカンー
ド先端直径に応じて次表のように規定された。
C and D are coefficients, and according to the experiments conducted by the present inventors, they were defined as shown in the following table according to the diameter of the tip of the cand.

表 この工うに定められた情報’fzcPU9に格納してお
き、実際の電子銃使用に際し、電流計10による検出電
流値がCPU9に格納された所望の輝度に対する設定電
流値と一致する↓う前記バイアス抵抗8の抵抗値を可変
する。これにより、電子銃1の輝度r所望の大きさに容
易、かつ安定に設定することが可能となる。
The information specified in this table is stored in the fzcPU 9, and when the electron gun is actually used, the current value detected by the ammeter 10 matches the set current value for the desired brightness stored in the CPU 9. The resistance value of resistor 8 is varied. This makes it possible to easily and stably set the brightness r of the electron gun 1 to a desired level.

なお、本発明は上述した実施例に限定されるものではな
く、その要旨?逸脱しない範囲で、種々変形して実施す
ることができる。例えば、前記LaB、カソードの先端
平面は円形に限るものではなく、直径70〔μm〕の円
と同等以上、の面積?持つならば矩形であってもよい。
It should be noted that the present invention is not limited to the embodiments described above, and the gist of the invention is not limited to the embodiments described above. Various modifications can be made without departing from the scope. For example, the tip plane of the LaB cathode is not limited to a circular shape, but has an area equal to or larger than a circle with a diameter of 70 [μm]? If it has one, it may be rectangular.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)〜(c)は従来の問題点を説明する几めの
もので輝度と温度・バイアス・全ビーム電流との関係?
示す特性図、第2図は本発明方法に係わる電子銃の輝度
と全ビーム電流との関係ケ示す特性図、第3図は本発明
の一実施例に用いた電子銃お工びその制御系を示す概略
構成図である。 1・・電子銃、2・・・単結晶LaI3.カソード、3
°°°ヒータ、4°°°ウエネルト電極、5・・・アノ
ード、6・・・カソード加熱用電源、7・・・高圧電源
、8・・・バイアス抵抗、9・・・CPU、10・・・
電流計、11・・・試料。 出願人代理人 弁理士  鈴 江 武 彦−一’を契の
         −−i俣C派 266− −v〈仁 つ
Figures 1 (a) to (c) are detailed explanations of the conventional problems: What is the relationship between brightness, temperature, bias, and total beam current?
2 is a characteristic diagram showing the relationship between the brightness of the electron gun and the total beam current according to the method of the present invention, and FIG. 3 is a characteristic diagram showing the electron gun control system used in an embodiment of the present invention. FIG. 1...electron gun, 2...single crystal LaI3. cathode, 3
°°° heater, 4°°° Wehnelt electrode, 5... anode, 6... cathode heating power supply, 7... high voltage power supply, 8... bias resistor, 9... CPU, 10...・
Ammeter, 11...sample. Applicant's agent Patent attorney Suzue Takehiko

Claims (2)

【特許請求の範囲】[Claims] (1)単結晶ランタンへキサポライドからなるカソード
温度いた3電極構造電子銃の輝度?設定する方法におい
て、上記力ンードの軸方位k<100)或いは<31 
o)に設定すると共にカソード先端ケ直径70〔μm〕
以上の平面に加工し、かつカソード使用温度11soo
(℃)以上に設定しておき、予め上記カソードに流れる
全ビーム電流に対する輝度?測定し、使用時に上記全ビ
ーム電流ケ検出し、この検出電流値と上記測定結果に基
づく所望の輝度に対する設定電流値とが一致する工う上
記全ビーム電流?制御することt特徴とする電子銃の輝
度設定方法。
(1) What is the brightness of a three-electrode electron gun with a cathode temperature of single crystal lanthanum to xaporide? In the setting method, the axial direction of the force node k<100) or <31
o) and the cathode tip diameter is 70 [μm].
Processed into a flat surface with a cathode operating temperature of 11soo.
(℃) or more, and the brightness relative to the total beam current flowing to the cathode above? Detect the total beam current during use, and find out whether this detected current value matches the set current value for the desired brightness based on the measurement results. A method for setting brightness of an electron gun characterized by controlling.
(2)前記全ビーム電流?制御する手段は、前記電子銃
のウェネルトバイアス?可変するものであること?特徴
とする特許請求の範囲第1項記載の電子銃の輝度設定方
法。
(2) Said total beam current? Is the means for controlling the Wehnelt bias of the electron gun? Is it something that can be changed? A method for setting brightness of an electron gun according to claim 1.
JP10716382A 1982-06-22 1982-06-22 Setting method for brightness of electron gun Granted JPS58223247A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10716382A JPS58223247A (en) 1982-06-22 1982-06-22 Setting method for brightness of electron gun

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10716382A JPS58223247A (en) 1982-06-22 1982-06-22 Setting method for brightness of electron gun

Publications (2)

Publication Number Publication Date
JPS58223247A true JPS58223247A (en) 1983-12-24
JPS6335064B2 JPS6335064B2 (en) 1988-07-13

Family

ID=14452081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10716382A Granted JPS58223247A (en) 1982-06-22 1982-06-22 Setting method for brightness of electron gun

Country Status (1)

Country Link
JP (1) JPS58223247A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190044A (en) * 1989-12-19 1991-08-20 Ebara Corp Electron beam accelerator
WO2002084696A1 (en) * 2001-04-13 2002-10-24 Advantest Corporation Electron beam generator and electron beam aligner
JP2003297272A (en) * 2002-04-04 2003-10-17 Ebara Corp Electron beam apparatus and method of manufacturing device using the same
JPWO2016110996A1 (en) * 2015-01-09 2017-04-27 技術研究組合次世代3D積層造形技術総合開発機構 Electron gun, electron gun control method, control program, and three-dimensional modeling apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127671A (en) * 1975-04-30 1976-11-06 Hitachi Ltd Power supply for electron gun
JPS5671236A (en) * 1979-11-14 1981-06-13 Toshiba Corp Electron gun
JPS5679828A (en) * 1979-12-05 1981-06-30 Toshiba Corp Electron gun
JPS5682539A (en) * 1979-12-07 1981-07-06 Toshiba Corp Electron gun

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51127671A (en) * 1975-04-30 1976-11-06 Hitachi Ltd Power supply for electron gun
JPS5671236A (en) * 1979-11-14 1981-06-13 Toshiba Corp Electron gun
JPS5679828A (en) * 1979-12-05 1981-06-30 Toshiba Corp Electron gun
JPS5682539A (en) * 1979-12-07 1981-07-06 Toshiba Corp Electron gun

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190044A (en) * 1989-12-19 1991-08-20 Ebara Corp Electron beam accelerator
WO2002084696A1 (en) * 2001-04-13 2002-10-24 Advantest Corporation Electron beam generator and electron beam aligner
JP2003297272A (en) * 2002-04-04 2003-10-17 Ebara Corp Electron beam apparatus and method of manufacturing device using the same
JPWO2016110996A1 (en) * 2015-01-09 2017-04-27 技術研究組合次世代3D積層造形技術総合開発機構 Electron gun, electron gun control method, control program, and three-dimensional modeling apparatus
US10217599B2 (en) 2015-01-09 2019-02-26 Technology Research Association For Future Additive Manufacturing Electron gun, control method and control program thereof, and three-dimensional shaping apparatus

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