JPS58223074A - Testing of demagnetization - Google Patents
Testing of demagnetizationInfo
- Publication number
- JPS58223074A JPS58223074A JP57105478A JP10547882A JPS58223074A JP S58223074 A JPS58223074 A JP S58223074A JP 57105478 A JP57105478 A JP 57105478A JP 10547882 A JP10547882 A JP 10547882A JP S58223074 A JPS58223074 A JP S58223074A
- Authority
- JP
- Japan
- Prior art keywords
- point
- magnetic field
- demagnetization
- bias magnetic
- minor loop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
(1)発明の技術分野
本発明は成子計算装置あるいはその端末機等の記憶装置
として用いられる磁気バブルメモリの試験法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a testing method for a magnetic bubble memory used as a storage device for a Seiko computing device or its terminal.
(2)技術の背景
磁気バブルメモリは不揮発性、高記憶密度、低消費電力
、小型軽量である等積々の特徴をもち、さらには機械的
要素を全く含まない固体素子であることから非常に高い
信頼性を有しておシ、大容量メモリとして将来が期待さ
れている。この磁気バブルメモリは磁気バブルが磁界に
より一軸異方性を有する磁性薄膜内を自由に動かすこと
かで′きることを利用したものであって第1図に示す如
く磁気バブルメモリ素子1、バブルを駆動するための回
転磁界発生用コイル212<バブルを安定に保持するた
めのバイアス磁界発生用磁石3,3′等に、!ニジ構成
されている。(2) Background of the technology Magnetic bubble memory has numerous features such as non-volatility, high storage density, low power consumption, small size and light weight, and is also extremely popular because it is a solid-state device that does not contain any mechanical elements. It has high reliability and is expected to have a promising future as a large capacity memory. This magnetic bubble memory utilizes the fact that magnetic bubbles can be freely moved within a magnetic thin film having uniaxial anisotropy by a magnetic field.As shown in FIG. Rotating magnetic field generating coil 212 for driving < bias magnetic field generating magnets 3, 3', etc. for stably holding the bubble, etc.! It is composed of two.
そしてメモリ素子1は、例えばガドリニウム・ガリウム
・ガーネット単結晶基飯の上に液相エピタキシャル成長
法によシ磁性ガーネットの薄膜を形成し、その上にパー
マロイ薄膜によυ絶2図に示す如きハーフディスクなど
のi9ターンを行列させたバブル転送路が形成されてい
る。このノ々プル転送路の構成にはシリアルループ構成
と、メジャーマイナー構成とがある。第3図はメジャー
マイナー構成の1例に示した図であり、・々プル発生器
4を有する書き込み用メジャーライン5と、ノぐプル検
出器6を有する読み用し用メジャーライン7と、これら
にトランスファダート8及びレグリケードゲート9で接
続された複数個のマイナーループ1o9.〜10−nで
構成されている。The memory element 1 is made by forming a thin film of magnetic garnet on a gadolinium-gallium-garnet single-crystal substrate by liquid phase epitaxial growth, for example, and then forming a permalloy thin film on top of the half-disk as shown in Figure 2. A bubble transfer path is formed by arranging i9 turns such as The configuration of this no-pull transfer path includes a serial loop configuration and a major-minor configuration. FIG. 3 is a diagram showing an example of a major/minor configuration, and shows a major line 5 for writing having a pull generator 4, a major line 7 for reading having a nog pull detector 6, and A plurality of minor loops 1o9. ~10-n.
このような磁気バブルメモリ素子においては、その製造
工程中の条件のばらつきにょシ、特性値にもばらつきを
生ずる。このためバイアス磁界印加用の永久磁石の着磁
強さを調整する必要から製品化する前に予め素子の特性
を調べておく必要がある。In such a magnetic bubble memory element, variations in conditions during the manufacturing process lead to variations in characteristic values. For this reason, since it is necessary to adjust the magnetization strength of the permanent magnet for applying the bias magnetic field, it is necessary to investigate the characteristics of the element before commercializing it.
(3)従来技術と問題点
第4図は磁気バブルメモリ素子の代表的な特性であるノ
ξイアス磁界マージンを示す図である。同図において、
横軸には駆動磁界を、縦軸にはバイアス磁界をとり、曲
線Aにより特性値を示した。(3) Prior Art and Problems FIG. 4 is a diagram showing the noise magnetic field margin, which is a typical characteristic of a magnetic bubble memory element. In the same figure,
The driving magnetic field is plotted on the horizontal axis, and the bias magnetic field is plotted on the vertical axis, and characteristic values are shown by curve A.
なおハツチングを施した領域が安定動作を行なう範囲で
ある。Note that the hatched area is the range in which stable operation occurs.
従来バイアス磁界印加用磁石の磁界値を決めるときの設
定ポイントとして、第4図に示したバイアス磁界マージ
ンの下限を用いていた。しかしこの方法はマイナールー
プへのバブルのつめこみベージ数、及びダート関係の特
性等によってばらつきが大きいため、バイアス磁界値設
定のずれを生ずるという欠点があった@
(4)発明の目的
本発明は上記従来の欠点に鑑み磁気バブルメモリ素子の
バイアス磁界設定置をばらつきが少なく且つ短時間で測
定できる減磁試験法を提供することを目的とう゛るもの
である。Conventionally, the lower limit of the bias magnetic field margin shown in FIG. 4 has been used as a setting point when determining the magnetic field value of the bias magnetic field applying magnet. However, this method has a disadvantage in that it causes deviations in the bias magnetic field value setting because there are large variations depending on the number of bubbles packed into the minor loop and dirt-related characteristics. (4) Purpose of the Invention The present invention In view of the drawbacks of the conventional art, it is an object of the present invention to provide a demagnetization test method that can measure the bias magnetic field setting of a magnetic bubble memory element in a short time and with little variation.
(5)発明の構成
ぞしてこの目的は本発明によれば、メジャーマイナー構
成の磁気バブルメモIJ X子について、そのバイアス
磁界値を予想されるバイアス磁界マージン特性の上限よ
りも高い点よシ低下させながら素子の安定動作範囲を測
定する減磁試験法において、動作不良のループ数が全体
のマイナーループ数の鉤棒となる磁界値を減磁設定ポイ
ントとすることを特徴とする減磁試験法を提供すること
によって達成される。(5) According to the present invention, the purpose of the present invention is to reduce the bias magnetic field value of the magnetic bubble memo IJ A demagnetization test method for measuring the stable operating range of an element while subjecting the device to a demagnetization test method, the demagnetization test method is characterized in that the demagnetization set point is a magnetic field value at which the number of malfunctioning loops is equal to the total number of minor loops. This is achieved by providing
(6) 5#5明の実施例 以下本発明実施例を図面によって詳述する。(6) 5 #5 Bright example Embodiments of the present invention will be described in detail below with reference to the drawings.
第5図は本発明による減磁試験法を説明するための図で
ある。同図において、横軸は駆動磁界を、縦軸に、はバ
イアス磁界をとり、曲線Bがある磁気パズルメモリ素子
の予想されるバイアス磁界マージン曲線歿とする。FIG. 5 is a diagram for explaining the demagnetization test method according to the present invention. In the figure, the horizontal axis represents the driving magnetic field, and the vertical axis represents the bias magnetic field, and curve B is the expected bias magnetic field margin curve of a certain magnetic puzzle memory element.
本発明法はこの予想されるマージン曲線の上限より更に
高い点Pにバイアス(1剋界値をとり、この点Pより徐
々に減磁して行くのである。この場合、点Pにおいては
マイナーループの全数が動作不良であり、曲#B上の点
Qではマイナーループのうち特定の不良ループを除いた
ほぼ全数が安定動作を行なうことになるが、本発明法で
は、点Pと点Qとの間で全マイナーループ数の釣機が動
作不良である点Rを見出し、この時のバイアス磁界値を
減磁設定ポイントとするのである。The method of the present invention takes a bias (one threshold value) at a point P that is higher than the upper limit of this predicted margin curve, and gradually demagnetizes from this point P. In this case, a minor loop occurs at point P. All of the minor loops are malfunctioning, and at point Q on song #B, almost all of the minor loops except for a specific malfunctioning loop operate stably. However, in the method of the present invention, the points P and Q The point R at which all the fishing machines with minor loops are malfunctioning is found between them, and the bias magnetic field value at this time is set as the demagnetization setting point.
この点Rはマイナーループへのつめこみページ数に依存
せず、また特定の不良ループ依存も少ないので設定ポイ
ントとして安定しており、パズルライドリードのシーケ
ンスも数ページのライドリードで可能であるので試験時
間も短かくなる。This point R is stable as a setting point because it does not depend on the number of pages packed into the minor loop and is less dependent on a specific defective loop, and the puzzle ride read sequence is possible with a ride read of several pages, so it can be tested. It also takes less time.
(7)発明の効果
以上、詳細に説明したように、本発明の減磁試験法は、
バイアス磁界設定値を、全マイナーループ数の鉤棒が動
作不良である磁界値を用いることにより、測定値のばら
つきが少なく且つ試験時間を従来に比して短縮し得ると
いった効果大なるものである。(7) Effects of the invention As explained in detail above, the demagnetization test method of the present invention has the following effects:
By using the bias magnetic field setting value at which the hook rods of all the minor loops are malfunctioning, there is a great effect that the variation in measured values is small and the test time can be shortened compared to the conventional method. .
第1図は従来の磁気バブルメモリデバイスを説明するた
めの図、第2図は磁気バブルメモリ素子のバブル転送路
を説明するための図、第3図は従来のメジャーマイナー
構成の磁気バブルメモリ素子を説明するだめの図、第4
図は磁気バブルメモリ素子のバイアス磁界マージン特性
を示した図、第5図は本発明による減磁試験法を説明す
るための図である。
図面において、4はバブル発生器、5は書き込み用メジ
ャーライン、6はバブル検出器、7は読み出し用メジャ
ーライン、8はトランスフアr−ト、9はレプリケート
ダート、10−1〜10−はマイナーループをそれぞれ
示す。
特許出願人
富士通株式会社
特許出願代理人
九理士 宵 木 朗
弁理士 西 舘 和 之
弁理士 内 1)幸 男
弁理士 山 口 昭 之
第2図Figure 1 is a diagram for explaining a conventional magnetic bubble memory device, Figure 2 is a diagram for explaining a bubble transfer path of a magnetic bubble memory element, and Figure 3 is a diagram for explaining a conventional magnetic bubble memory element with a major-minor configuration. 4th diagram to explain
This figure shows the bias magnetic field margin characteristics of the magnetic bubble memory element, and FIG. 5 is a diagram for explaining the demagnetization test method according to the present invention. In the drawing, 4 is a bubble generator, 5 is a major line for writing, 6 is a bubble detector, 7 is a major line for reading, 8 is a transfer r-, 9 is a replicate dirt, and 10-1 to 10- are minor Each loop is shown. Patent Applicant Fujitsu Limited Patent Application Agent Akira Yoiki Patent Attorney Kazuyuki Nishidate Patent Attorney 1) Yukio Patent Attorney Akira Yamaguchi Figure 2
Claims (1)
ついて、そのバイアス磁界値を予想されるバイアス磁界
マージ特性の上限よシも高い点より低下させながら素子
の安定動作範囲を測定する減磁試験法において、動作不
良ループ数が全体のマイナーループ数の約捧となる磁界
値を減磁設定ポイントとすることを特徴とする減磁試験
法。1. Regarding a magnetic bubble memory element with a major-minor configuration, in a demagnetization test method that measures the stable operating range of the element while lowering the bias magnetic field value from a point higher than the upper limit of the expected bias magnetic field merging characteristic, the operation A demagnetization test method characterized in that the demagnetization setting point is a magnetic field value at which the number of defective loops is approximately equal to the total number of minor loops.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57105478A JPS58223074A (en) | 1982-06-21 | 1982-06-21 | Testing of demagnetization |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57105478A JPS58223074A (en) | 1982-06-21 | 1982-06-21 | Testing of demagnetization |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58223074A true JPS58223074A (en) | 1983-12-24 |
JPS6235187B2 JPS6235187B2 (en) | 1987-07-31 |
Family
ID=14408693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57105478A Granted JPS58223074A (en) | 1982-06-21 | 1982-06-21 | Testing of demagnetization |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58223074A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5341950A (en) * | 1976-09-29 | 1978-04-15 | Fujitsu Ltd | Stability continuous testing method for bubble information |
JPS5378741A (en) * | 1976-12-23 | 1978-07-12 | Fujitsu Ltd | Automatic bias margin measurement method for bubble element |
JPS551615A (en) * | 1978-06-19 | 1980-01-08 | Hitachi Ltd | Magnetizing and demagnetizing unit of magnetic bubble memory device and its production |
JPS5680874A (en) * | 1979-11-30 | 1981-07-02 | Fujitsu Ltd | Magnetization device for bubble memory |
JPS56163574A (en) * | 1980-05-16 | 1981-12-16 | Hitachi Ltd | Automatic magnetizing device for bias magnetic field magnet of magnetic bubble storage device |
-
1982
- 1982-06-21 JP JP57105478A patent/JPS58223074A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5341950A (en) * | 1976-09-29 | 1978-04-15 | Fujitsu Ltd | Stability continuous testing method for bubble information |
JPS5378741A (en) * | 1976-12-23 | 1978-07-12 | Fujitsu Ltd | Automatic bias margin measurement method for bubble element |
JPS551615A (en) * | 1978-06-19 | 1980-01-08 | Hitachi Ltd | Magnetizing and demagnetizing unit of magnetic bubble memory device and its production |
JPS5680874A (en) * | 1979-11-30 | 1981-07-02 | Fujitsu Ltd | Magnetization device for bubble memory |
JPS56163574A (en) * | 1980-05-16 | 1981-12-16 | Hitachi Ltd | Automatic magnetizing device for bias magnetic field magnet of magnetic bubble storage device |
Also Published As
Publication number | Publication date |
---|---|
JPS6235187B2 (en) | 1987-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Ferré et al. | Magnetization-reversal processes in an ultrathin Co/Au film | |
Bobeck et al. | Magnetic bubbles—An emerging new memory technology | |
CN103824588B (en) | A kind of method regulated and controled to magnetic multidomain state | |
Raffel et al. | Magnetic film memory design | |
Victora | Quantitative theory for hysteretic phenomena in CoNi magnetic thin films | |
CN108109668A (en) | A kind of test method of magnetic memory, device, storage medium and electronic device | |
JPS58223074A (en) | Testing of demagnetization | |
Pardavi-Horvath | Switching properties of a regular two-dimensional array of small uniaxial particles | |
Shapira et al. | Phase transitions of MnP for a field parallel to the hard-magnetization direction: A possible new Lifshitz point | |
JPS58208985A (en) | Method for testing magnetic bubble memory element | |
Ehrmann | Examination and simulation of new magnetic materials for the possible application in memory cells | |
Perković et al. | Improved magnetic information storage using return-point memory | |
US3890604A (en) | Selective dipole orientation of individual volume elements of a solid body | |
US3899779A (en) | Magnetic bubble domain system using different types of domains | |
Bosch et al. | 1024 bit bubble memory chip | |
US3493940A (en) | Serial access memory using traveling domain walls | |
Lim et al. | Multibit MRAM using a pair of memory cells | |
US3979737A (en) | Bistable magnetic bubble domain devices | |
JPS58208988A (en) | Method for testing deffective loop mask | |
Dorleijn et al. | Repulsive interactions between magnetic bubbles: Consequences for bubble devices | |
Sano et al. | Static and dynamic properties of a gadolinium garnet | |
Tsuboya et al. | 2 Mbit magnetic bubble memory | |
Tanaka | Magnetic data storage technology: from perpendicular magnetic recording to the computational-storage integration | |
SU1522285A1 (en) | Memory cell | |
Shirakura et al. | A conductor-permalloy loop bubble domain memory |