JPS58220143A - Organic film - Google Patents
Organic filmInfo
- Publication number
- JPS58220143A JPS58220143A JP57103604A JP10360482A JPS58220143A JP S58220143 A JPS58220143 A JP S58220143A JP 57103604 A JP57103604 A JP 57103604A JP 10360482 A JP10360482 A JP 10360482A JP S58220143 A JPS58220143 A JP S58220143A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound
- substituted
- group
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
- G03G5/0622—Heterocyclic compounds
- G03G5/0644—Heterocyclic compounds containing two or more hetero rings
- G03G5/0661—Heterocyclic compounds containing two or more hetero rings in different ring systems, each system containing at least one hetero ring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
- G03G5/0601—Acyclic or carbocyclic compounds
- G03G5/0609—Acyclic or carbocyclic compounds containing oxygen
- G03G5/0611—Squaric acid
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
- G03G5/0664—Dyes
- G03G5/0666—Dyes containing a methine or polymethine group
- G03G5/0672—Dyes containing a methine or polymethine group containing two or more methine or polymethine groups
- G03G5/0674—Dyes containing a methine or polymethine group containing two or more methine or polymethine groups containing hetero rings
Abstract
Description
【発明の詳細な説明】
本発明は、レーザ特に長波長側に発振波長を有する半導
体レーザを効°果的に吸収し、別のエネルギーに変換し
うる有機被膜に関し、詳しくは半導体レーザを光源とし
た電子写真方式プリンターの電子写真用感光被膜、半導
体レーザによる書込みと再生が可能な光デイスク用被膜
あるいは赤外線カットフィルターなどに適用できる新規
な有機被膜に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an organic coating that can effectively absorb a laser, particularly a semiconductor laser having an oscillation wavelength on the long wavelength side, and convert it into another energy. The present invention relates to a novel organic coating that can be applied to electrophotographic photosensitive coatings for electrophotographic printers, coatings for optical discs that can be written and reproduced by semiconductor lasers, and infrared cut filters.
レーザを光源とした電子写真方式プリンターは、画像情
報に応じた電気信号によって、レーザの変調を行なわせ
、この変調されたレーザをがルパノミラーなどによって
感光体上に光走査して静電潜像を形成した後、トナー現
像および転写を順次施すことにより、所望の再生画像を
形成することができる。この際に用いられていたレーザ
は、一般にヘリウム−カドミウム(発振波長+ 441
.6 nm)やヘリウム−ネオン(発振波長: 6 !
12.8 nm)などのガスレーザであった。An electrophotographic printer that uses a laser as a light source modulates the laser using an electrical signal that corresponds to image information, and the modulated laser is optically scanned onto a photoreceptor using a lupanomirror, etc., to form an electrostatic latent image. After formation, a desired reproduced image can be formed by sequentially performing toner development and transfer. The laser used at this time was generally helium-cadmium (oscillation wavelength + 441
.. 6 nm) and helium-neon (oscillation wavelength: 6!
12.8 nm) gas laser.
従って、この様な光源に対して用いられる感光体は、6
50nm程度、までに分光増感されていればよく、例え
、ばポリビニルカルバゾールとトリニトロンルオレノン
との電荷移動錯体を感光層に用いたもの、セレンによっ
て増感させたテルル蒸着層を感光体に用いたもの、電荷
輸送層としてセレン蒸着層を導電層上く形成し、とのセ
レン蒸着層上にセレン−テルル蒸着層を形成させたこと
からなる感光層を用いたもの、増感色素によって分光増
感させた硫化カドミウムを感光層に用いたもの、また有
機−顔料を含有した電荷発生層と電荷輸送層に機能分離
し、その感光波長域を長波長側まで増感した感光層を用
いたものなどが知られている。Therefore, the photoreceptor used for such a light source is 6
It is sufficient that the photoreceptor is spectrally sensitized to about 50 nm, for example, a photoreceptor using a charge transfer complex of polyvinylcarbazole and trinitronefluorenone, or a photoreceptor using a tellurium vapor-deposited layer sensitized by selenium. One uses a photosensitive layer consisting of a selenium vapor deposited layer formed on a conductive layer as a charge transport layer, and a selenium-tellurium vapor deposited layer formed on the selenium vapor deposited layer.Spectral enhancement using a sensitizing dye Those using sensitized cadmium sulfide as a photosensitive layer, and those using a photosensitive layer that is functionally separated into a charge generation layer and a charge transport layer containing organic pigments and sensitized to the longer wavelength range. etc. are known.
一方、光デイスク技術で用いる記録被膜は、光学的に検
出可能な小さな(例えば、約1μ)ピットをらせん状又
は円形のトラック形態にして゛、高密度情報を記憶する
ことができる。この様なディスクに情報を書込むには、
レーザ感応層の表面に集束したレーザを走査し、とのレ
ーザ光線が照射された表面のみがピットを形成し、この
ピットをらせん状又は円形トラックの形態で形成する。On the other hand, recording coatings used in optical disk technology can store high-density information by forming optically detectable small pits (eg, about 1 micron) in the form of spiral or circular tracks. To write information to such a disk,
The surface of the laser sensitive layer is scanned with a focused laser beam, and only the surface irradiated with the laser beam forms pits, and the pits are formed in the form of a spiral or circular track.
レーザ感応層は、レーザ・エネルギーを吸収して光学的
に検出可能なピットを形成できる。例えば、ヒートモー
ド記録方式では、レーザ感応層は熱エネルギーを吸収し
、その個所に蒸発又は融解によシ小さな凹部(ピット)
を形成できる。また、別のヒートモード記録方式では、
照射されたレーザ・エネルギーの吸収によシ、その個所
に光学的に検出可能な濃度差を有するピットを形成でき
る。The laser sensitive layer can absorb laser energy to form optically detectable pits. For example, in the heat mode recording method, the laser sensitive layer absorbs thermal energy and forms small pits at that location due to evaporation or melting.
can be formed. In addition, in another heat mode recording method,
By absorbing the irradiated laser energy, pits with an optically detectable concentration difference can be formed at that location.
この光ディスクに記録された情報は、レーザをトラック
に沿って走査し、ピットが形成された部分とピットが形
成されていない部分の光学的変化を読み取るとLrよっ
て検出される。例えば、レーザがトラックに沿って走査
され、ディスクによシ反射されたエネルギーがフォトデ
ィテクターによってモニターされる。ピットが珍成され
ていない時、フォトディテクターの出力は低下し、一方
ピットが形成されている時はレーザ光線は下層の反射面
によって充分に反射されフォトディテクターの出力は大
きくなる。The information recorded on this optical disk is detected by Lr when a laser is scanned along a track and optical changes in areas where pits are formed and areas where pits are not formed are read. For example, a laser is scanned along a track and the energy reflected by the disk is monitored by a photodetector. When pits are not formed, the output of the photodetector decreases, while when pits are formed, the laser beam is sufficiently reflected by the underlying reflective surface and the output of the photodetector increases.
この様な光ディスクに用いる記録媒体として、これまで
アルミニウム蒸着膜などの金属薄膜、ビスマス薄膜、酸
化テルル薄膜やカルコゲナイド系非晶質ガラス膜などの
無機物質を主に用いたものが提案されている。As recording media for use in such optical discs, media that mainly use inorganic materials such as metal thin films such as aluminum evaporated films, bismuth thin films, tellurium oxide thin films, and chalcogenide-based amorphous glass films have been proposed so far.
ところで、近年レーザとして小型でしかも低コストの上
、直接変調が可能な半導体レーザが開発されているが、
とのレーザの発振波長が、750 nm以上の波長を有
していることが多い。Incidentally, in recent years, semiconductor lasers have been developed that are small, low-cost, and capable of direct modulation.
The oscillation wavelength of the laser often has a wavelength of 750 nm or more.
従って、この様な半導体レーザを用いて記録及び(又は
)再生を行なう場合圧は、レーザ感応被膜の吸収特性は
長波長側に吸収ピーク(一般に75 Q nm〜85
Q nmの領域)を有する必要がある。Therefore, when recording and/or reproducing using such a semiconductor laser, the absorption characteristics of the laser sensitive coating have an absorption peak on the long wavelength side (generally 75 Q nm to 85 Q nm).
Q nm).
しかし、これまでのレーザ感応被膜、特に無機材料を主
成分として形成した被膜は、レーザ光に対する反射率が
高いため、レーザの利用率が低くな)、高感度特性が得
られない欠点を有してお夛、しかも感応波長域を75
Q nm以上とすることは、レーザ感応被膜の層構成を
複雑化したり、特に電子写真用感光被膜の場合で社使用
した増感染料が繰ヤ返し帯電−露光を行なっているうち
に、退色してしまうなどの欠点を有している。However, conventional laser-sensitive coatings, especially those formed mainly of inorganic materials, have the drawback of not being able to obtain high sensitivity characteristics (because of their high reflectance to laser light, the utilization rate of the laser is low). In addition, the sensitive wavelength range is 75
A value of Q nm or more may complicate the layer structure of the laser-sensitive coating, or the sensitizing dye used in the electrophotographic photosensitive coating may fade during repeated charging and exposure. It has disadvantages such as
この様なことから、近年750 nm以上の波長光に対
して高感度特性を示す有機被膜が提案されている。例え
ば、米国特許第4515985号、 「Reeeac
h DiecloeureJ 20517(198
1,5)に開示のビIJ IJウム系染料や[J、Va
c、 S(!1゜Technol、、 j8(1)、
JLn、/Feb、 1981 、 pl 05〜p1
09に開示のスクェアリリウム染料を含有した有機被膜
が750 nm以上のレーザに対して感応性であること
が知られている。For this reason, in recent years, organic coatings have been proposed that exhibit high sensitivity to light with a wavelength of 750 nm or more. See, for example, U.S. Pat. No. 4,515,985, “Reeeac
h DiecloeureJ 20517 (198
1, 5) and [J, Va
c, S(!1゜Technol,, j8(1),
JLn, /Feb, 1981, pl 05-p1
It is known that organic coatings containing the square aryllium dye disclosed in 2009 are sensitive to lasers of 750 nm and above.
しかし、一般に有機化合物は吸収特性が長波長領域にな
るほど不安定で、わずかの温度上昇によ、って分解され
やすいなどの問題点を有すると同時に電子写真方式プリ
ンターあるいは光ディスクで要求される各種の特性を満
足する必要があるため、必ずしも実用性の点で十分に満
足できる有機被膜が開発されているものとは言えないの
が現状である。However, in general, organic compounds have problems such as their absorption characteristics becoming unstable in the longer wavelength region and being easily decomposed by a slight temperature rise. At present, it cannot be said that an organic film that is fully satisfactory in terms of practicality has been developed because it is necessary to satisfy certain characteristics.
従って、本発明の第1の目的は、新規且つ有用な有機被
膜を提供することにある。Accordingly, a first object of the present invention is to provide a new and useful organic coating.
本発明の第2の目的は、長波長側、特に750nm以上
に吸収帯をもつ有機被膜を提供することにある。A second object of the present invention is to provide an organic coating having an absorption band on the long wavelength side, particularly at 750 nm or more.
本発明の第6の目的は、熱に対して安定な有機被膜を提
供することにある。A sixth object of the present invention is to provide a thermally stable organic coating.
本発明の第4の目的は、レーザを光源とした電子写真方
式プリンターの電子写真用感光被膜を提供することにあ
る。A fourth object of the present invention is to provide an electrophotographic photosensitive coating for an electrophotographic printer using a laser as a light source.
本発明の第5の目的は、750 nm以上の波長域で高
感度な特性を有する電子写真用感光被膜を提供すること
にある。A fifth object of the present invention is to provide a photosensitive film for electrophotography that has high sensitivity in a wavelength range of 750 nm or more.
本発明の第6の目的は、光デイスク記録用被膜を提供す
る仁とにある。A sixth object of the present invention is to provide a coating for optical disc recording.
本発明の第7の目的は、750 nm以上の波長域で高
感度であシ、しかも十分なS/N比を有する光デイスク
記録用被膜を提供することにある。A seventh object of the present invention is to provide an optical disk recording film that is highly sensitive in a wavelength range of 750 nm or more and has a sufficient S/N ratio.
本発明のかかる目的は、下記一般式(1)で示される化
合物を含有する有機被膜に達成される。This object of the present invention is achieved by an organic film containing a compound represented by the following general formula (1).
一般式(1)
%式%
X、およびx2は、硫黄原子、酸素原子又はセレン原子
を示す。2.は、ピリリウム、チオピリリウム、セレナ
ピリリウム、ベンゾピリリウム、ベンゾチオピリリウム
、ペンゾセレナピリリ°ウム、ナフトピリリウム、ナン
ドチオピリリウム又はナフトセレナピリリウムを完成す
るに必要な原子群を示しておシ、z2はピラン、チオピ
ラン、セレナピラン、ベンゾピラン、ベンゾチオピラン
、ベンゾセレナピラン、ナフトピラン、ナフトチオピラ
ン又はナフトセレナピランヲ完成するに必要な原子を示
している。これらの環にはアルキル基(メチル、エチル
、n−プロピル、イソプロピル、n−ブチル、t−ブチ
ル、n−アシル、t−アシル、n−ヘキシル、n−オク
チル、t−オクチル、2−エチルヘキシルなど)、アル
コキシ基(メトキシ、エトキシ。General formula (1) % formula % X and x2 represent a sulfur atom, an oxygen atom or a selenium atom. 2. indicates the atomic group necessary to complete pyrylium, thiopyrylium, selenapyrylium, benzopyrylium, benzothiopyrylium, penzoselenapyrylium, naphtopyrylium, nandothiopyrylium, or naphthoselenapyrylium. , z2 represents an atom necessary to complete pyran, thiopyran, selenapyran, benzopyran, benzothiopyran, benzoselenapyran, naphthopyran, naphthothiopyran or naphthoselenapyran. These rings include alkyl groups (methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, n-acyl, t-acyl, n-hexyl, n-octyl, t-octyl, 2-ethylhexyl, etc.) ), alkoxy groups (methoxy, ethoxy.
プロポキシ、ブトキシなど)、置換もしくは未置換アリ
ール基(フェニル、トリル、キシリル。propoxy, butoxy), substituted or unsubstituted aryl groups (phenyl, tolyl, xylyl, etc.).
ビフェニル、エチルフェニル、メトキシフェニル、エト
キシフェニル、ジェトキシフェニル、ヒドロキシフェニ
ル、クロロフェニル、ジクロロフェニル、フロモフェニ
ル、シフロモフェニル、ニトロフェニル、ジエチルアミ
ノフェニル、ジメチルアミノフェニル、ジベンジルアミ
ノフェニルナト)、スチリル、4−フェニル−1,6−
ブタジェニル、メトキシスチリル、ジメトキシスチリル
、エトキシスチリル、ジエトキシスf IJ /l/、
ジメチルアミノスチリル、4−(P−ジメチルアミノフ
ェニル)−1,3−ブタジェニル、a−<P−ジエチル
アミノフェニル)−1,3−ブタジェニルなどのスチリ
ル基もしくは4−フエニ#−1,3−ブタジェニル又は
その置換体又は6−カルバゾリル、9−メチル−3−カ
ルバゾリル、9−エチル−3−カルバゾリル、9−カル
バゾリルなどの複素環基によって置換されることができ
る。biphenyl, ethylphenyl, methoxyphenyl, ethoxyphenyl, jetoxyphenyl, hydroxyphenyl, chlorophenyl, dichlorophenyl, fromophenyl, cyfromophenyl, nitrophenyl, diethylaminophenyl, dimethylaminophenyl, dibenzylaminophenyl nato), styryl, 4-phenyl -1,6-
butadienyl, methoxystyryl, dimethoxystyryl, ethoxystyryl, diethoxys f IJ /l/,
a styryl group such as dimethylaminostyryl, 4-(P-dimethylaminophenyl)-1,3-butadienyl, a-<P-diethylaminophenyl)-1,3-butajenyl, or 4-pheny#-1,3-butadienyl; It can be substituted by a substituent thereof or a heterocyclic group such as 6-carbazolyl, 9-methyl-3-carbazolyl, 9-ethyl-3-carbazolyl, 9-carbazolyl.
00 00
R1,R2,R3およびR4は、
(a) 水素原子
(b) アルキル基、特に炭素原子数1〜15のアル
キル基:例えば、メチル、エチル、プロピル、イソプロ
ピル、ブチル、t−ブチル、アミル、イソアミル、ヘキ
シル、オクチル、ノニル、ドデシル
(C) アルコキシ基:例えば、メトキシ、エトキシ
、プロポキシ、ブトキシ、アミロキシ、ヘキソキシ、オ
クトキシ
(d)アリール基=フェニル、α−ナフチル、β−ナフ
チル
(e) [換アリール基ニトリル、キシリル、ビフェ
ニル、エチルフェニル、メトキシフェニル、エトキシフ
ェニル、アミロキシフェニル、ジメトキシフェニル、ジ
ェトキシフェニル、ヒドロキシフェニル、クロロフェニ
ル、ジクロロフェニル、プ四モフェニル、シフロモフェ
ニル、ニトロフェニル、ジエチルアミノフェニル、ジメ
チルアミノフェニル、ジベンジルアミノフェニル
(f) スチリル基又は4−フェニル−1,6−ブタ
ジェニル基ニスチリル、4−フェニル−1,6−ブタジ
ェニル
(ω 置換スチリル基又は4−フェニル−1,3−ブタ
ジェニル基:メトキシスチリル、ジメトキシスチリル、
エトキシスチリル、ジェトキシスチリル、ジメチルアミ
ノスチリル、ジエチルアミノスチリル、4−(P−ジメ
チルアミノフェニル)−1,3−ブタジェニル、4−(
p−ジエチルアミノフェニル) −1,3−ブタジェニ
ル
(h) R,とR2ならびにR5とR4は、結合して
ベンゼンを形成してもよい
(1)f換又は未置換の複素環基:例えば6−カルバゾ
リル、9−メチル−3−カルバゾリル、9−エチル−3
−カルバゾリル、9−カルバゾリル
を表わす。00 00 R1, R2, R3 and R4 are (a) a hydrogen atom (b) an alkyl group, especially an alkyl group having 1 to 15 carbon atoms: for example, methyl, ethyl, propyl, isopropyl, butyl, t-butyl, amyl , isoamyl, hexyl, octyl, nonyl, dodecyl (C) Alkoxy group: For example, methoxy, ethoxy, propoxy, butoxy, amyloxy, hexoxy, octoxy (d) Aryl group = phenyl, α-naphthyl, β-naphthyl (e) [ Substituted aryl group nitrile, xylyl, biphenyl, ethylphenyl, methoxyphenyl, ethoxyphenyl, amyloxyphenyl, dimethoxyphenyl, jetoxyphenyl, hydroxyphenyl, chlorophenyl, dichlorophenyl, tetramophenyl, cyfuromophenyl, nitrophenyl, diethylaminophenyl, Dimethylaminophenyl, dibenzylaminophenyl (f) Styryl group or 4-phenyl-1,6-butadienyl group Nistyryl, 4-phenyl-1,6-butadienyl (ω substituted styryl group or 4-phenyl-1,3-butadienyl Group: methoxystyryl, dimethoxystyryl,
Ethoxystyryl, jetoxystyryl, dimethylaminostyryl, diethylaminostyryl, 4-(P-dimethylaminophenyl)-1,3-butadienyl, 4-(
p-diethylaminophenyl) -1,3-butadienyl (h) R, and R2 and R5 and R4 may combine to form benzene (1) f-substituted or unsubstituted heterocyclic group: for example 6- Carbazolyl, 9-methyl-3-carbazolyl, 9-ethyl-3
-Carbazolyl represents 9-carbazolyl.
前記一般式(1)で示される化合物の代表例を挙げると
、次のとおりである。Representative examples of the compound represented by the general formula (1) are as follows.
化合物A 化合物例
化合物層 化合物例
00
化合物ム 化合物例
化合物層 化合物例
化合物層 化合物例
0
これらの化合物は1例えば一般式
(式中、Xlは前述で定義したものと同様のものを意味
し、zOはバークロレート、フルオボレート、スルフォ
アセテート、アイオダイド、ブロマイドなどのアニオン
を表わす。)で示されるピリリウム塩と6.4−ジヒド
ロキシ−3−シクロブテン−1,2−ジオン又バクロコ
ン酸もしくはその誘導体(例えばモノ、ジアルキルエス
テル)とを溶媒中で反応させることKよって容易に得る
ことができる。Compound A Compound Example Compound Layer Compound Example 00 Compound M Compound Example Compound Layer Compound Example Compound Layer Compound Example 0 represents an anion such as berchlorate, fluoborate, sulfoacetate, iodide, bromide, etc.) and 6,4-dihydroxy-3-cyclobutene-1,2-dione or bacroconic acid or its derivatives (e.g. mono , dialkyl ester) in a solvent.
2−メチル−4,6−ジフェニルビリリウム塩は、5c
hneiderらのBar誌54巻、2289頁(19
21年)記載の方法によって、また2−メチル−4,6
−ジフェニルチオピリリウム塩はWizingerらの
He1v、 Chin、Acta誌69巻221頁(1
956年)の方法によって得ることができる。又、前述
の化合物の他に米国特許第4315983号公報に開示
の2,6−ジーt−ブチル−4−メチルチオピリリウム
など公知の活性メチル基を有するピリリウム塩を合成の
中間体として用いることができる。2-methyl-4,6-diphenylvirylium salt is 5c
Bar, Vol. 54, p. 2289 (19
21) and 2-methyl-4,6
-Diphenylthiopyrylium salt is described in He1v, Chin, Acta, Vol. 69, p. 221 (1) by Wisinger et al.
956). In addition to the above-mentioned compounds, known pyrylium salts having an active methyl group such as 2,6-di-t-butyl-4-methylthiopyrylium disclosed in U.S. Pat. No. 4,315,983 can be used as synthetic intermediates. can.
反応溶媒としては、広範な有機溶剤を使用することがで
きるが、好ましくはエタノール、ブタノール、ベンジル
アルコールなどのアルコール類、アセトニトリル、プロ
ピオニトリル等のニトリル類、酢酸などの有機カルボン
酸類、無水酢酸などの酸無水物が用いられる。また、ブ
タノール、ベンジルアルコールなトニベンゼンなどの芳
香族炭化水素を混合することもできる。As the reaction solvent, a wide range of organic solvents can be used, but preferably alcohols such as ethanol, butanol and benzyl alcohol, nitriles such as acetonitrile and propionitrile, organic carboxylic acids such as acetic acid, acetic anhydride, etc. acid anhydrides are used. Further, aromatic hydrocarbons such as butanol, benzyl alcohol, and tonibenzene can also be mixed.
反応系における原料化合物の割合は、3,4−ジヒドロ
キシ−3−シクロブテン−1,2−ジオン又はクロコン
酸の1当量モルに対してピリリウム塩は1・0〜5・0
当量モル、好ましくは1.5〜3.0当量モルである。The ratio of the raw material compounds in the reaction system is 1.0 to 5.0 of the pyrylium salt to 1 equivalent mole of 3,4-dihydroxy-3-cyclobutene-1,2-dione or croconic acid.
It is equivalent mole, preferably 1.5 to 3.0 equivalent mole.
反応溶媒は、原料化合物の合計量1gに対し、0.5か
ら100yt、好ましくは2 rtfLから10m1で
ある。The reaction solvent is used in an amount of 0.5 to 100 yt, preferably 2 rtfL to 10 ml, per 1 g of the total amount of raw material compounds.
反応温度は25℃から200℃、好ましくは60℃から
140℃で行なわれ、反応時間は5分から30時間、好
ましくは20分から5時間である。The reaction temperature is 25°C to 200°C, preferably 60°C to 140°C, and the reaction time is 5 minutes to 30 hours, preferably 20 minutes to 5 hours.
また反応の促進のために、塩基を加えることが出来る。Furthermore, a base can be added to promote the reaction.
具体的にはトリエチルアミン、ピリジン、キノリン、酢
酸ナトリウム、などの塩基を用いることが出来る。Specifically, bases such as triethylamine, pyridine, quinoline, and sodium acetate can be used.
次に、前述の化合物のうち、代表的な本のについてその
合成法を示す。Next, synthesis methods for representative examples of the above-mentioned compounds will be shown.
合成例1(化合物167)
100ml三ツロフラスコに、6.4−ジヒドロキシ−
3−シクロブテン−1,2−ジオン1.2g(0,01
05モル)と、n−ブタノール36m1を加え攪拌しな
がら、100℃まで加熱し、溶解させた。キノリン3m
l、2−メチル−4,6−シフエニルビリリウムパーク
ロレー)7.3g(0,0211モル)およびベンゼン
15.1を順次フラスコ内に加え、反応を開始させた。Synthesis Example 1 (Compound 167) 6,4-dihydroxy-
1.2 g of 3-cyclobutene-1,2-dione (0,01
05 mol) and 36 ml of n-butanol were added and heated to 100° C. with stirring to dissolve. quinoline 3m
7.3 g (0.0211 mol) of 1,2-methyl-4,6-cyphenylbyrylium perchlorate) and 15.1 mol of benzene were sequentially added to the flask to initiate the reaction.
反応は、95〜110℃においてベンゼン60m1とブ
タノール20m1を分割添加しながら、水を共沸留去さ
せて、6時間60分行なった。The reaction was carried out for 6 hours and 60 minutes at 95 to 110° C. while adding 60 ml of benzene and 20 ml of butanol in portions while azeotropically distilling off water.
反応液を冷却後吸引濾過し、n−ブタノール30蝙で洗
浄し、粗染料を得た。粗染料を200艷のメタノールで
5回煮沸濾過し、その後、テトラヒドロフラン100m
1で2回煮沸濾過し、染料41を得た。After cooling, the reaction solution was suction filtered and washed with 30 g of n-butanol to obtain a crude dye. The crude dye was boiled and filtered 5 times with 200ml of methanol, then 100ml of tetrahydrofuran.
Dye 41 was obtained by boiling and filtering twice at 1.
収量:1.9g、収率:31.7%
融点:255〜258℃
元素分析:分子式 C40H2604
計算値 分析値
0: 84.18 84.02H:
4.60 4.76可視
赤外吸収スペクトル:ジメチルフォルムアミド中910
rm 6.6X10’
815nm 6.2X10’
合成例2(化合物A5)
100艷三ツロフラスコに、3,4−ジヒドロキシ−3
−シクロブテン−1,2−ジオン1.0g。Yield: 1.9g, Yield: 31.7% Melting point: 255-258°C Elemental analysis: Molecular formula C40H2604 Calculated value Analysis value 0: 84.18 84.02H:
4.60 4.76 Visible infrared absorption spectrum: 910 in dimethylformamide
rm 6.6X10' 815nm 6.2X10' Synthesis Example 2 (Compound A5) 3,4-dihydroxy-3 was placed in a 100-length Mitsuro flask.
- 1.0 g of cyclobutene-1,2-dione.
(0,0088モ#)とn−ブタノール50dを加え、
攪拌しながら100℃まで加熱し、溶解1させた。次に
、キノリン2.5WfL、2−メチル−4,6−シフエ
ニルチオピリリウムパークロレート6.56 g(0,
0176モル)およびベンゼン10−を順次フラスコ内
に加え反応を開始させた。反応は95〜110℃におい
て、ベンゼン30dとn−ブタノ−#10+4を分割添
加しながら、水を共沸留去させ、3時間行なった。(0,0088 mo#) and n-butanol 50d,
The mixture was heated to 100° C. while stirring to cause dissolution. Next, 2.5 WfL of quinoline, 6.56 g of 2-methyl-4,6-cyphenylthiopyrylium perchlorate (0,
0176 mol) and benzene 10- were sequentially added into the flask to start the reaction. The reaction was carried out at 95 to 110° C. for 3 hours while adding 30 d of benzene and n-butano #10+4 in portions while azeotropically distilling water off.
反応液を一晩放置した後、吸引濾過し、n−プタノール
30m1で洗浄し、粗染料を得た。After the reaction solution was left overnight, it was suction filtered and washed with 30 ml of n-butanol to obtain a crude dye.
粗染料を200m1のメタノールで5回煮沸濾過し、そ
の後テトラヒドロンラン100−で2回煮沸濾過し、染
料層2を得だ。The crude dye was boiled and filtered five times with 200 ml of methanol, and then boiled and filtered twice with tetrahydrone 100-ml to obtain dye layer 2.
収量:1.36.li’ 収率: 25.7%′士1
゜
融点:232.5〜235℃
元素分析:分子式 C4oH2602S2計算値 分
析値
0: 79.70 79.59
H: 4.5 6 4
.4 58: 10.64 1
0.69可視赤外吸収スペクトル:ジメチルフォルムア
ミド中975nm 5.13X10’
885nm 5.29X10’
本発明は、前述の一般式(りで示されるピIJ リウム
系列の化合物は、アルキリデンジアリーレン部分の繰シ
返し単位を有する重合体との共晶錯体としてもよい。Yield: 1.36. li' Yield: 25.7%
°Melting point: 232.5-235°C Elemental analysis: Molecular formula C4oH2602S2 calculated value Analysis value 0: 79.70 79.59
H: 4.5 6 4
.. 4 58: 10.64 1
0.69 Visible and infrared absorption spectrum: 975 nm in dimethylformamide 5.13X10' 885 nm 5.29X10' It may also be a eutectic complex with a polymer having a repeating unit.
アルキリデンジアリーレン部分の繰り返し単位を有する
重合体は。A polymer having a repeating unit of an alkylidene diarylene moiety.
例えば一般式(5)
で示すことができる。式中、R6およびR7は、水素原
子、アルキル基(メチル、エチル、グロビル、イソプロ
ピル、ブチル、t−ブチル、ペンチル、ヘキシル、オク
チル、ノニル、デシル)、置換アルキル基(トリフルオ
ロメチル)、アリール基(フェニル、ナフチル)、置換
アリール(トリル、キシリル、エチルフェニル、フロビ
ルフェニル、アミルフェニル、クロロフェニル、ジクロ
ロフェニル、ブロモフェニル)ヲ示シ、凍たR6とR7
で結合してシクロヘキシルの如きシクロアルカン類ある
いはノルボルニルの如キポリシクロアルカン類を形成す
ることができる。For example, it can be represented by general formula (5). In the formula, R6 and R7 are a hydrogen atom, an alkyl group (methyl, ethyl, globyl, isopropyl, butyl, t-butyl, pentyl, hexyl, octyl, nonyl, decyl), a substituted alkyl group (trifluoromethyl), an aryl group (phenyl, naphthyl), substituted aryl (tolyl, xylyl, ethylphenyl, flobylphenyl, amyl phenyl, chlorophenyl, dichlorophenyl, bromophenyl), frozen R6 and R7
can be combined to form cycloalkanes such as cyclohexyl or polycycloalkanes such as norbornyl.
R5およびR8は、水素原子、炭素原子数1〜5のアル
キル基、ハロゲンi子(クロロ、ブロモ、ヨード)を表
わす、R2は、
OS O
II II
II−o−c−o−1−0−C−O−1−’c−o−
10 0 CH。R5 and R8 represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogen i atom (chloro, bromo, iodo), R2 is OSO II II
II-o-c-o-1-0-C-O-1-'c-o-
100 CH.
II II 1
− (! −0−0H2−1−0−0−CH−1O0
111
からなる二価の残基から選択された基である。II II 1
- (! -0-0H2-1-0-0-CH-1O0 111 It is a group selected from the divalent residues consisting of.
代表的な重合体は、下記のとおりである。Representative polymers are as follows.
重合体1 例
1: ポリ(4,4’−イソプロピリデンジフェニレン
−〇〇−1,4−シクロヘキシル−ジメチルカーボネー
ト)
2: ポIJ (3,3’−エチレンジオキシフェニレ
ンチオカーボネート)
6: ポリ(4,4’−イソフロピリデンジフエニレン
カルボネートーCO−テレフタレート)4: ポリ(4
,4’−イソフロピリデンジフエニレンカルボネート)
5: ポリ(4,4’−イソブロピリデンフエニレンチ
オカルポネート)
6: ホI) (2,2−fタンビス−4−フェニレ
ンカルボネート)
7: ポリ(4,4’−イソフロピリデンジフエニレン
カルボネートープロツクーエチレンオキシド
8: ポリ(4,4’−イソフロピリデンジフエニレン
カルボネートーブロックテトラメチレンオキシド)
9: ボ’) (’+”−イソプロピリデンビス(2−
メチルフェニレン)−カルボネート〕
重合体& flJ
lo: ポリ(4,4’−イソフロビリデンフェニレ
ン−co−1,4−フェニレンカルボネート)11:
ポリ(4,4’−イソプロピリデンジフェニレンーc
o−1,3−フェニレンカルボネート)12: ポリ
(4,4’−イソプロピリデンジフェニレン−co −
4、4′−ジフェニレンカルボネート)
13: ポリ(4,4’−イソフロピリデンジフェニ
レ/−co−4,4−オキシジフェニレンカルボネート
)
14: ポリ(4,4’−イソフロビリデンジフェニ
レ7− Co −4,4’−カルボニル−ジフェニレン
カルボネート)
15: ポリ(4,4’−イソプロピリデンジフェニ
レンーco−4,4’−エチレンジフェニレンカルボネ
ート)
16: ポリ〔4,4’−メチレンビス(2−メチル
フェニレン)カルボネート〕
17: ポリ(i、1−(p−ブロモフェニルエタン
)ビス(4−フェニレン)・1カルボネート〕18:
ポリ[4,4’−イソプロピリデンジフェニレン−c
o−スルホニルビス−(4−7エ二レン)カルボネート
]
重合体高 例
19: ポリ(4,4’−イソプロピリデンビス(2
−クロロフェニレン)−カルボネート、)20: ポ
リ(ヘキサフルオロイソフロビリデンジー4−フェニレ
ンカルボネート)
21: ポリ(4,4’−イソプロピリデンジフェニ
レン−4,4′−イソプロピリデンジベンゾアート)
22: ポリ(4,4’−イソプロピリデンジベンジ
ル−4,4’−イソプロピリデンジペンゾアート)26
: ポリ(2,2−(5−メチルブタン)ビス−4−
フェニレンカルボネート〕
24: ポリ(2,2、−(り、3−ジメチルフリン
)ビス−4−フェニレンカルボネート〕
25: ポリ(1,1−〔1−(ナフチル)〕〕ビス
ー4−フェニレンカルボネート
26: ポリ(2,2−(4−メチルペンタン)ビス
−4−7エニレンカルボネート〕
これらの共晶錯体は、例えば米国特許第3684502
号公報、オーストラリア公開第87757/75号公報
に開示された方法によって同様に得ることができる。例
′えば、前述のビIJ IJウム系列の化合物と前述の
重合体をハロゲン化炭化水素含有溶剤(ジクロルメタン
)に溶解させて、この溶液に非ノ・ロダン−非極性溶剤
(ヘキサン、オクタン、デカン、リグロイン、トルエン
)を注入して共晶錯体を沈澱させることができる。Polymer 1 Example 1: Poly(4,4'-isopropylidene diphenylene-〇〇-1,4-cyclohexyl-dimethyl carbonate) 2: PoIJ (3,3'-ethylenedioxyphenylenethiocarbonate) 6: Poly (4,4'-Isofuropylidene diphenylene carbonate CO-terephthalate) 4: Poly(4
, 4'-isopropylidene diphenylene carbonate) 5: Poly(4,4'-isopropylidene phenylene thiocarponate) 6: HoI) (2,2-f tanbis-4-phenylene carbonate) ) 7: Poly(4,4'-isofuropylidene diphenylene carbonate block ethylene oxide) 8: Poly(4,4'-isofuropylidene diphenylene carbonate block tetramethylene oxide) 9: Bo') ('+”-isopropylidene bis(2-
methylphenylene)-carbonate] Polymer & flJ lo: Poly(4,4'-isofuroylidenephenylene-co-1,4-phenylene carbonate) 11:
Poly(4,4'-isopropylidene diphenylene-c
o-1,3-phenylene carbonate) 12: poly(4,4'-isopropylidenediphenylene-co-
4,4'-diphenylene carbonate) 13: Poly(4,4'-isofuropylidene diphenylene/-co-4,4-oxydiphenylene carbonate) 14: Poly(4,4'-isofuropylidene carbonate) 15: Poly(4,4'-isopropylidene diphenylene-co-4,4'-ethylene diphenylene carbonate) 16: Poly [4,4'-methylenebis(2-methylphenylene)carbonate] 17: Poly(i,1-(p-bromophenylethane)bis(4-phenylene).1carbonate) 18:
poly[4,4'-isopropylidene diphenylene-c
o-sulfonyl bis-(4-7 enylene) carbonate] Polymer high Example 19: Poly(4,4'-isopropylidene bis(2
-chlorophenylene)-carbonate, ) 20: Poly(hexafluoroisofuropylidene di-4-phenylene carbonate) 21: Poly(4,4'-isopropylidene diphenylene-4,4'-isopropylidene dibenzoate) 22: Poly(4,4'-isopropylidene dibenzyl-4,4'-isopropylidene dipenzoate) 26
: Poly(2,2-(5-methylbutane)bis-4-
Phenylene carbonate] 24: Poly(2,2,-(ri,3-dimethylfurin)bis-4-phenylenecarbonate) 25: Poly(1,1-[1-(naphthyl)])bis-4-phenylenecarbo Poly(2,2-(4-methylpentane)bis-4-7enylene carbonate) These eutectic complexes are described, for example, in U.S. Pat. No. 3,684,502.
Australian Publication No. 87757/75. For example, the above-mentioned bicarbonate series compound and the above-mentioned polymer are dissolved in a halogenated hydrocarbon-containing solvent (dichloromethane), and this solution is mixed with a non-rodane-nonpolar solvent (hexane, octane, decane, etc.). , ligroin, toluene) can be injected to precipitate the eutectic complex.
本発明の有機被膜は、光デイスク記録に用いるととがで
きる。例えば、第1図に示す様な基板1の上に前述の有
機被膜2を形成した記録媒体とすることができる。かか
る有機被膜2は、前述の化合物を真空蒸着によって形成
でき、またバインダー中に前述の一般式(りで示される
化合物を含有させた塗工液を塗布するととによっても形
成することができる。塗工によって被膜を形成する際、
前述の化合物はバインダー中に分散状態で含有されてい
てもよく、あるいは非晶質状態で含有されていてもよい
。好適なバインダーとしては、広範な樹脂から選択する
ことができる。具体的には、ニトロセルロース、リン酸
セルロース、硫酸セルロース、酢酸セルロース、プロピ
オン酸セルロース、酪酸セルロース、ミリスチン酸セル
ロース、パルミチン酸セルロース、酢酸、フロピオン酸
セルロース、酢酸、酪酸セルロースなどのセルロースエ
ステル類、メチルセルロース、エチルセルロース、フロ
ビルセルロース、メチルセルロースなどのセルロースエ
ーテル類、ホリスチレン、ボ!J塩化ビニル、ポリ酢酸
ビニル、ポリビニルブチラール、ポリビニルアセクール
、ポリビニルアルコール、ポリビニルピロリドンなどの
ビニル樹脂類、スチレン−ブタジェンコポリマー、スチ
レンーアクリロニ) +7 /にコポリマー、スチレン
−ブタジェン−アクリロニトリルコポリマー、塩化ビニ
ル−酢酸ビニルコポリマーなどの共重合樹脂類、ポリメ
チルメタクリレート、ポリメチルアクリレート、ポリブ
チルアクリレート、ポリアクリル酸、ポリメタクリル酸
、ポリアクリルアミド、ポリアクリロニトリルなどのア
クリル樹脂類、ポリエチレンテレフタレートなどのポリ
エステル類、ポリ(4,4’−イソプロピリデンジフェ
ニレンーコ−1,4−シクロヘキシレンジメチレンカー
ボネート)、ポリ(エチレンジオキシ−6,3′−フェ
ニレンチオカーボネート)、ポリ(4,4’−イソプロ
ビリデンジフェニレンヵーボネートーコーテレフタレー
ト)、ポリ(4゜4′−イソプロピリデンジフェニレン
カーボネート)、ポリ(4,4’ −5ee−ブチリデ
ンジフェニレンカーボネート)、ポリ(4,4’−イソ
プロピリデンジフェニレンカーボネート−ブロック−オ
キシエチレン)などのボリアリレート樹脂類、あるいは
ポリアミド類、ポリイミド類、エポキシ樹脂類、フェノ
ール樹脂類、ポリエチレン、ポリプロピレン、塩素化ポ
リエチレンなどのポリオレフィン類などを用いることが
できる。The organic film of the present invention can be used for optical disc recording. For example, it is possible to use a recording medium in which the above-mentioned organic film 2 is formed on a substrate 1 as shown in FIG. Such an organic film 2 can be formed by vacuum deposition of the above-mentioned compound, or by applying a coating liquid containing a compound represented by the above-mentioned general formula (R) in a binder. When forming a film by
The above-mentioned compounds may be contained in the binder in a dispersed state or in an amorphous state. Suitable binders can be selected from a wide variety of resins. Specifically, cellulose esters such as nitrocellulose, cellulose phosphate, cellulose sulfate, cellulose acetate, cellulose propionate, cellulose butyrate, cellulose myristate, cellulose palmitate, acetic acid, cellulose propionate, acetic acid, cellulose butyrate, and methyl cellulose. , cellulose ethers such as ethylcellulose, flobylcellulose, and methylcellulose, folystyrene, and Bo! J Vinyl resins such as vinyl chloride, polyvinyl acetate, polyvinyl butyral, polyvinyl acecool, polyvinyl alcohol, polyvinylpyrrolidone, styrene-butadiene copolymer, styrene-acryloni) +7 / ni copolymer, styrene-butadiene-acrylonitrile copolymer, chloride Copolymer resins such as vinyl-vinyl acetate copolymer, acrylic resins such as polymethyl methacrylate, polymethyl acrylate, polybutyl acrylate, polyacrylic acid, polymethacrylic acid, polyacrylamide, polyacrylonitrile, polyesters such as polyethylene terephthalate, Poly(4,4'-isopropylidene diphenylene-co-1,4-cyclohexylene dimethylene carbonate), poly(ethylenedioxy-6,3'-phenylene thiocarbonate), poly(4,4'-isopropylidene Poly(4゜4'-isopropylidene diphenylene carbonate), Poly(4,4'-5ee-butylidene diphenylene carbonate), Poly(4,4'-isopropylidene diphenylene carbonate) Polyarylate resins such as (carbonate-block-oxyethylene), polyamides, polyimides, epoxy resins, phenolic resins, polyolefins such as polyethylene, polypropylene, chlorinated polyethylene, etc. can be used.
塗工の際に使用できる有機溶剤は、バインダーの種類や
前述の化合物をバインダー中に含有させる際、分散状態
とするか、あるいは非晶質状態とするかによって異なっ
てくるが、一般には、メタノール、エタノール、イソプ
ロパツールなどのアルコール類、アセトン、メチルエチ
ルケトン、シクロヘキサノンなどのケトン類、N、N−
ジメチルホルムアミド、N、N−ジメチル7セ)アミド
などのアミド類、ジメチルスルホキシドなどのスルホキ
シド類、テトラヒドロフラン、ジオキサン、エチレング
リコールモノメチルエーテルなどのエーテル類、酢酸メ
チル、酢酸エチル、酢酸ブチルなどのエステル類、クロ
ロホルム、塩化メチレン、ジクロルエチレン。The organic solvent that can be used during coating varies depending on the type of binder and whether the above-mentioned compound is contained in the binder in a dispersed or amorphous state, but in general, methanol is used. , alcohols such as ethanol and isopropanol, ketones such as acetone, methyl ethyl ketone, and cyclohexanone, N, N-
Amides such as dimethylformamide, N,N-dimethyl 7)amide, sulfoxides such as dimethyl sulfoxide, ethers such as tetrahydrofuran, dioxane, ethylene glycol monomethyl ether, esters such as methyl acetate, ethyl acetate, butyl acetate, Chloroform, methylene chloride, dichloroethylene.
四塩化炭素、トリクロルエチレンなどの脂肪族ハロゲン
化炭化水素類あるいはベンゼン、トルエン、キシレン、
リフロイン、モノクロルベンゼン、ジクロルベンゼンな
どの芳香族類などを用いることができる。Aliphatic halogenated hydrocarbons such as carbon tetrachloride and trichloroethylene, or benzene, toluene, xylene,
Aromatics such as refloin, monochlorobenzene, dichlorobenzene, etc. can be used.
塗工は、浸漬コーティング法、スプレーコーティング法
、スピンナーコーティング法、ビードコーティング法、
マイヤーバーコーティング法、ブレードコーティング法
、ローラーコーティング法、カーテンコーティング法な
どのコーティング法を用いて行なうことができる。Coating methods include dip coating, spray coating, spinner coating, bead coating,
This can be carried out using a coating method such as a Mayer bar coating method, a blade coating method, a roller coating method, or a curtain coating method.
バインダーとともに有機被膜2を形成する際、前述の一
般式(1)で示される化合物の含有量は、有機被膜2中
において1〜90重量%、好ましくは20〜70重量%
である。まだ、有機被膜2の乾燥膜厚あるいは蒸着膜厚
は、10ミクロン以下、好ましくは2ミクロン以下であ
る。When forming the organic film 2 together with the binder, the content of the compound represented by the above general formula (1) in the organic film 2 is 1 to 90% by weight, preferably 20 to 70% by weight.
It is. However, the dry film thickness or vapor deposited film thickness of the organic film 2 is 10 microns or less, preferably 2 microns or less.
基板1としては、ポリエステル、アクリル樹脂、ポリオ
レフィン樹脂、フェノール樹脂、エポキシ樹脂、ポリア
ミド、ポリイミドなどのプラスチック、ガラスあるいは
金属類などを用いることができる。As the substrate 1, plastics such as polyester, acrylic resin, polyolefin resin, phenol resin, epoxy resin, polyamide, polyimide, glass, or metals can be used.
また1本発明は、第2図に示す様に基板1と有機被膜2
の間に反射層6を設けることができる。反射層6は、ア
ルミニウム、銀、クロムなどの反射性金属の蒸着層又は
ラミネート層とすることができる。In addition, the present invention has a substrate 1 and an organic coating 2 as shown in FIG.
A reflective layer 6 can be provided between them. The reflective layer 6 can be a deposited layer or a laminate layer of a reflective metal such as aluminum, silver, or chromium.
有機被膜2は、第3図に示す集束されたレーザ光線4の
照射によってピット5を形成することができる。ピット
5の深さを有機被膜2の膜厚と同一にすると、ピット領
域における反射率を増加させることができる。読み出し
の際、書き込みに用いたレーザ光線と同一の波長を有す
るが、強度の小さいレーザ光線を用いれば、読み出し光
がビット領域で大きく反射されるが、非ピット領域にお
いては吸収されるうまた、別の方法は有機被膜2が吸収
する第1の波長のレーザ光線で実時間書込みを行ない、
読み出しに有機被膜2を実質的に透過する第2の波長の
レーザ光線を用いることである。読み出しレーザ光線は
、ビット領域と非ピット領域における異なる膜厚によっ
て生じる反射層の変化に応答することができる。The organic coating 2 can be formed with pits 5 by irradiation with a focused laser beam 4 as shown in FIG. By making the depth of the pits 5 the same as the thickness of the organic coating 2, the reflectance in the pit region can be increased. When reading, if a laser beam having the same wavelength as the laser beam used for writing but with low intensity is used, the reading light will be largely reflected in the bit area, but will be absorbed in the non-pit area. Another method is to perform real-time writing with a laser beam of a first wavelength that is absorbed by the organic coating 2;
For readout, a laser beam of a second wavelength that is substantially transmitted through the organic coating 2 is used. The readout laser beam can respond to changes in the reflective layer caused by the different film thicknesses in the bit and non-pit areas.
本発明の有機被膜は、アルゴンレーザ(発振波長488
nm ) 、ヘリウム−ネオンレーザ(発振波長63
3 nm ) 、ヘリウム−カドミウムレーザ(発振波
長442 nm )などのガスレーザーの照射によって
記録することも可能であるが、好ましくは750 nm
以上の波長を有するレーザ、特にガリウムーアルミニウ
ムーヒ素半導体レーザ(発振波長780 nm )など
の近赤外ある赤外領域に発振波長を有するレーザ光線の
照射によって記録する方法が適している。また、読み出
しのためには、前述のレーザ光線を用いることができる
。この際、書込みと読み出しを同一波長のレーザで行な
うことができ、また異なる波長のレーザで行なうことが
できる。The organic coating of the present invention can be used with argon laser (oscillation wavelength 488
nm), helium-neon laser (oscillation wavelength 63 nm), helium-neon laser (oscillation wavelength 63 nm)
It is also possible to record by irradiation with a gas laser such as a helium-cadmium laser (oscillation wavelength 442 nm), but preferably 750 nm).
A method of recording by irradiation with a laser beam having an oscillation wavelength in the near-infrared region or a certain infrared region such as a laser having a wavelength above the above, particularly a gallium-aluminum-arsenic semiconductor laser (oscillation wavelength 780 nm) is suitable. Furthermore, the aforementioned laser beam can be used for reading. At this time, writing and reading can be performed using a laser of the same wavelength, or can be performed using lasers of different wavelengths.
本発明の別の具体例では、電子写真感光体の感光層とし
て適用することができる。また、かかる感光層を電荷発
生層と電荷輸送層に機能分離した電子写真感光体におけ
る電荷発生層としても適用することができる。In another embodiment of the present invention, it can be applied as a photosensitive layer of an electrophotographic photoreceptor. Further, such a photosensitive layer can be applied as a charge generation layer in an electrophotographic photoreceptor in which the functions are separated into a charge generation layer and a charge transport layer.
電荷発生層は、十分な吸光度を得るために。charge generation layer to obtain sufficient absorbance.
できる限り多くの前述の光導電性を示す化合物を含有し
、且つ発生した電荷キャリアの飛程を短かくするために
薄膜層1例えば5ミクロン以下、好ましくは0.01ミ
クロン〜1ミクロンの膜厚をもつ薄膜層とすることが好
ましい。このことは、入射光量の大部分が電荷発生層で
吸収されて、多くの電荷キャリアを生成すること、さら
に発生した電荷キャリアを再結合や捕獲(ト2ッグ)に
より失活することなく電荷輸送層に注入する必要がある
ことに帰因している。In order to contain as much of the above-mentioned photoconductive compound as possible and shorten the range of the generated charge carriers, the thin film layer 1 has a thickness of, for example, 5 microns or less, preferably 0.01 micron to 1 micron. It is preferable to form a thin film layer having the following properties. This means that most of the incident light is absorbed by the charge generation layer, generating many charge carriers, and that the generated charge carriers are not deactivated by recombination or trapping (togging). This is due to the need to inject into the transport layer.
電荷発生層は、前述の化合物を適当なバインダーに分散
させ、これを基体の上に塗工することKよって形成でき
、また真空蒸着装置により蒸着膜を形成することによっ
て得ることができる。電荷発生層を塗工によって形成す
る際に用いうるバインダーとしては広範な絶縁性樹脂か
ら選択でき、またポリ−N−ビニルカルバゾール、ポリ
ビニルアントラセンヤボリビニルピレンなどの有機光導
電性ポリマーから選択できる。The charge generation layer can be formed by dispersing the above-mentioned compound in a suitable binder and coating it on the substrate, or it can be obtained by forming a vapor deposited film using a vacuum vapor deposition apparatus. The binder that can be used to form the charge generating layer by coating can be selected from a wide variety of insulating resins, and can also be selected from organic photoconductive polymers such as poly-N-vinylcarbazole, polyvinylanthracene, and polyvinylpyrene.
好ましくは、ポリビニルブチラール、ボリアリレート(
ビスフェノールAとフタル酸の縮重合体など)、ポリカ
ーボネート、ポリエステル、フェノキシ樹脂、ポリ酢酸
ビニル、アクリル樹脂、ポリアクリルアミド樹脂、ポリ
アミド、ポリビニルピリジン、セルロニス系樹脂、ウレ
タン樹脂、エポキシ樹脂、カゼイン、ポリビニルアルコ
ール、ポリビニルピロリドンなどの絶縁性樹脂を挙げる
ことができる。電荷発生層中に含有する樹脂は、80重
景%以下、好ましくは40重量%以下が適している。Preferably, polyvinyl butyral, polyarylate (
polycarbonate, polyester, phenoxy resin, polyvinyl acetate, acrylic resin, polyacrylamide resin, polyamide, polyvinylpyridine, cellulone resin, urethane resin, epoxy resin, casein, polyvinyl alcohol, Examples include insulating resins such as polyvinylpyrrolidone. The amount of resin contained in the charge generation layer is preferably 80% by weight or less, preferably 40% by weight or less.
これらの樹脂を溶解する溶剤は、樹脂の種類い。具体的
な有機溶剤としては、メタノール、エタノール、イソプ
ロパツールなどのアルコール類、アセトン、メチルエチ
ルケトン、シクロヘキサノンなどのケトン類、N、N−
ジメチルホルムアミド、N、N−ジメチルアセトアミド
などのアミド類、ジメチルスルホキシドなどのスルホキ
シド類、テトラヒドロフラン、ジオキサン、エチレング
リコールモノメチルエーテルなどのエーテル類、酢酸メ
チル、酢酸エチルなどのエステル類、クロロホルム、塩
化メチレン、ジクロルエチレン、四塩化炭素、トリクロ
ルエチレンなどの脂肪族ハロゲン化炭化水素類あるいは
ベンゼン、トルエン、キシレン、リグ目イン、モノクロ
ルベンゼン、ジクロルベンゼンなどの芳香族類などを用
いることができる。The solvent that dissolves these resins depends on the type of resin. Specific organic solvents include alcohols such as methanol, ethanol and isopropanol, ketones such as acetone, methyl ethyl ketone and cyclohexanone, N, N-
Amides such as dimethylformamide and N,N-dimethylacetamide, sulfoxides such as dimethyl sulfoxide, ethers such as tetrahydrofuran, dioxane, and ethylene glycol monomethyl ether, esters such as methyl acetate and ethyl acetate, chloroform, methylene chloride, and Aliphatic halogenated hydrocarbons such as chloroethylene, carbon tetrachloride, trichlorethylene, etc., or aromatics such as benzene, toluene, xylene, ligatoin, monochlorobenzene, dichlorobenzene, etc. can be used.
塗工は、浸漬コーティング法、スプレーコーティング法
、スピンナーコーティング法、ピードコーティング法、
マイヤーバーコーディング法、ブレードコーティング法
、ローラーコーティング法、カーテンコーティング法な
どのコーティング法を用いて行なうことができる。乾燥
は、室温における指触乾燥後、加熱乾燥する方法が好ま
しい。加熱乾燥は、30℃〜200℃の温度で5分〜2
時間の範囲の時間で、静止または送風下で行なうことが
できる。Coating methods include dip coating method, spray coating method, spinner coating method, peed coating method,
This can be carried out using a coating method such as a Mayer barcoding method, a blade coating method, a roller coating method, or a curtain coating method. For drying, it is preferable to dry to the touch at room temperature and then heat dry. Heat drying at a temperature of 30°C to 200°C for 5 minutes to 2
It can be carried out stationary or under blown air for a period of time within a range of hours.
電荷発生層中、前述の電荷発生層と電気的に接続されて
おシ、電界の存在下で電荷発生層から注入された電荷キ
ャリアを受は取るとともに、これらの電荷キャリアを表
面まで輸送できる機能を有している。この際、この電荷
輸送層は、電荷発生層の上に積層されていてもよく、ま
たその下に積層されていてもよい。しかし・、電荷輸送
層は、電荷発生層の上に積層されていることが望ましい
。A function in the charge generation layer that is electrically connected to the charge generation layer described above and capable of receiving and receiving charge carriers injected from the charge generation layer in the presence of an electric field and transporting these charge carriers to the surface. have. At this time, this charge transport layer may be laminated on or under the charge generation layer. However, it is desirable that the charge transport layer is laminated on the charge generation layer.
電荷輸送層における電荷キャリアを輸送する物質(以下
、単に電荷輸送物質という)は、前述の電荷発生層が感
応する電磁波の波長域に実質的に非感応性であることが
好ましい。ここで言う「1!磁波」とは、γ線、X線、
紫外線、可視光線、−Wf−4魂膚−近赤外線、赤外線
、遠赤外線などを包含する広義の「光線」の定義を包含
する。電荷輸送層の光感応性波長域が電荷発生層のそれ
と一致またはオーバーラツプする時には、両者で発生し
た電荷キャリアが相互に捕獲し合い、結果的には感度の
低下の原因となる。The substance that transports charge carriers in the charge transport layer (hereinafter simply referred to as charge transport substance) is preferably substantially insensitive to the wavelength range of electromagnetic waves to which the charge generation layer is sensitive. "1! Magnetic waves" mentioned here include γ-rays, X-rays,
It encompasses a broad definition of "light rays" that includes ultraviolet rays, visible light, -Wf-4 light rays, near-infrared rays, infrared rays, far infrared rays, and the like. When the photosensitive wavelength range of the charge transport layer coincides with or overlaps that of the charge generation layer, charge carriers generated in both layers trap each other, resulting in a decrease in sensitivity.
電荷輸送物質としては電子輸送性物質と正孔輸送性物質
があり、電子輸送性物質としては、クロルアニル、ブロ
モアニル、テトラシアノエチレン、テトラシアノキノジ
メタン、2,4.7−ドリニトロー9−フルオレノン、
2,4,5.7−テトラニトロ−9−フルオレノン、2
,4.7− )リートロー9−ジシアノメチレンフルオ
レノン、2.4,5.7−チトラニトロキザントン、2
,4.8−トリニドロチオキサントン等の電子吸引性物
質やこれら電子吸引物質を高分子化したもの等がある。Charge transporting substances include electron transporting substances and hole transporting substances, and electron transporting substances include chloranil, bromoanil, tetracyanoethylene, tetracyanoquinodimethane, 2,4.7-dolinitro-9-fluorenone,
2,4,5.7-tetranitro-9-fluorenone, 2
, 4.7-) Leetrow 9-dicyanomethylenefluorenone, 2.4,5.7-titranitroxanthone, 2
, 4.8-trinidrothioxanthone and other electron-withdrawing substances, and polymerized products of these electron-withdrawing substances.
正孔輸送性物質としては、ピレン、N−エチルカルバソ
ール、N−イソプロピルカルバソール、N−)チル−N
−フェニルヒドラジノ−3−メチリテン−9−エチルカ
ルバゾール、N、N−ジフェニルヒドラジノ−3−メチ
リデン−9−エチルカルバゾール、N、N−ジフェニル
ヒドラジノ−3−メチリデン−10−エチルフェノチア
ジン、N、N−ジフェニルヒドラジノ−6−メチリデン
−10−エチルフェノキサジン、P−ジエチルアミノベ
ンズアルデヒド−N、N−ジフェニルヒドラゾン、P−
ジエチルアミノベンズアルデヒドーN−α−ナフチル−
N−フェニルヒドラゾン、P−ピロリジノベンズアルデ
ヒド−N、N−ジフェニルヒト2シン、1,5.3−
)ジメチルインドレニン−ω−アルデヒド−N、N−ジ
フェニルヒドラゾン、p−ジエチルベンズアルデヒド−
3−メチルベンズチアゾリノン−2−ヒドラシイ等のヒ
ドラゾン類、2,5−ビス(p−ジエチルアミノフェニ
ル) −1,5,4−オキサジアゾール、1−フェニル
−5−(p−ジエチルアミノスチリル)−5−(P−ジ
エチルアミノフェニル)ピラゾリン、1−〔キノリル(
2)”1l−(P−ジエチルアミノスチリル)−5−(
P−ジエチルアミノフェニル)ピラゾリン、1−〔ピリ
ジル(2))−3−(P−ジエチルアミノスチリル)−
5−(P−ジエチルアミノフェニル)ピラゾリン、1−
〔6−メドキシービリジル(2))−3−(P−ジエチ
ルアミノスチリル)−5−(P−ジエチルアミノフェニ
ル)ピラゾリン、)−[ピリジル(5)]−5−(P−
ジエチルアミノスチリル)−5−(P−ジエチルアミノ
フェニル)ピラゾリン、1−〔レピジA=(2))−1
(P−ジエチルアミノスチリル)−5−(p−ジエチル
アミノフェニル)ピラゾリン、1−〔ピリジル(2)
) −3−(P−ジエチルアミノスチリル)−4−メチ
ル−5−(P−ジエチルアミノフェニル)ピラゾリン、
1−〔ピリジル(2))−3−(α−メチル−P−ジエ
チルアミノスチリル)−5−(P−ジエチルアミノフェ
ニル)ヒラゾリン、1−フェニル−3−(p−ジエチル
アミノスチリル)−4−メチル−5−(P−ジエチルア
ミノフェニル)ピラゾリン、1−フェニル−6−(α−
ベンジル−P−ジエチルアミノスチリル)−5−(F−
ジエチルアミノフェニル)ピラゾリン、スピロピラゾリ
ンなどのピラゾリン類、2−(P−ジエチルアミノスチ
リル)−6−ジニチルアミノベンズオキサゾール、2−
(p−ジエチルアミノフェニル)−4−(p−ジメチル
アミノフェニル)−5−(2−クロロフェニル)オキサ
ゾール等のオキサゾール系化合物、2−(P−ジエチル
アミノスチリル)−6−ジニチルアミノペンゾチアゾー
ル等のチアゾール系化合物、ビス(4−ジエチルアミノ
−2−メチルフェニル)−フェニルメタン等のトリアリ
ールメタン系化合物、1,1−ビス(4−N、N−ジエ
チルアミン−2−メチルフェニル)へブタン、1,1,
2.2−テ) ラキス(4−N、N−ジメチルアミ−ノ
ー2−メチルフェニル)エタン等のポリアリールアルカ
ン類、トリフェニルアミン、ポリ−N−ビニルカルバゾ
ール、ポリビニルピレン、ポリビニルアントラセン、ポ
リビニルアクリジン、ポリ−9−ビニルフェニルアント
ラセン、ピレン−ホルムアルデヒド樹脂、エチルカルバ
ゾールホルムアルデヒド樹脂等がある。Examples of hole-transporting substances include pyrene, N-ethylcarbasol, N-isopropylcarbasol, N-)thyl-N
-Phenylhydrazino-3-methylidene-9-ethylcarbazole, N,N-diphenylhydrazino-3-methylidene-9-ethylcarbazole, N,N-diphenylhydrazino-3-methylidene-10-ethylphenothiazine, N, N-diphenylhydrazino-6-methylidene-10-ethylphenoxazine, P-diethylaminobenzaldehyde-N, N-diphenylhydrazone, P-
Diethylaminobenzaldehyde N-α-naphthyl-
N-phenylhydrazone, P-pyrrolidinobenzaldehyde-N, N-diphenylhuman dicine, 1,5.3-
) Dimethylindolenine-ω-aldehyde-N,N-diphenylhydrazone, p-diethylbenzaldehyde-
Hydrazones such as 3-methylbenzthiazolinone-2-hydracy, 2,5-bis(p-diethylaminophenyl)-1,5,4-oxadiazole, 1-phenyl-5-(p-diethylaminostyryl) -5-(P-diethylaminophenyl)pyrazoline, 1-[quinolyl(
2)"1l-(P-diethylaminostyryl)-5-(
P-diethylaminophenyl)pyrazoline, 1-[pyridyl(2))-3-(P-diethylaminostyryl)-
5-(P-diethylaminophenyl)pyrazoline, 1-
[6-Medoxybilidyl(2))-3-(P-diethylaminostyryl)-5-(P-diethylaminophenyl)pyrazoline,)-[pyridyl(5)]-5-(P-
diethylaminostyryl)-5-(P-diethylaminophenyl)pyrazoline, 1-[lepidi A=(2))-1
(P-diethylaminostyryl)-5-(p-diethylaminophenyl)pyrazoline, 1-[pyridyl (2)
) -3-(P-diethylaminostyryl)-4-methyl-5-(P-diethylaminophenyl)pyrazoline,
1-[pyridyl(2))-3-(α-methyl-P-diethylaminostyryl)-5-(P-diethylaminophenyl)hilazoline, 1-phenyl-3-(p-diethylaminostyryl)-4-methyl-5 -(P-diethylaminophenyl)pyrazoline, 1-phenyl-6-(α-
benzyl-P-diethylaminostyryl)-5-(F-
pyrazolines such as diethylaminophenyl)pyrazoline and spiropyrazoline, 2-(P-diethylaminostyryl)-6-dinithylaminobenzoxazole, 2-
Oxazole compounds such as (p-diethylaminophenyl)-4-(p-dimethylaminophenyl)-5-(2-chlorophenyl)oxazole, 2-(P-diethylaminostyryl)-6-dinithylaminopenzothiazole, etc. Thiazole compounds, triarylmethane compounds such as bis(4-diethylamino-2-methylphenyl)-phenylmethane, 1,1-bis(4-N,N-diethylamine-2-methylphenyl)butane, 1, 1,
2.2-te) Polyarylalkanes such as lakis(4-N,N-dimethylamino-2-methylphenyl)ethane, triphenylamine, poly-N-vinylcarbazole, polyvinylpyrene, polyvinylanthracene, polyvinylacridine, Examples include poly-9-vinylphenylanthracene, pyrene-formaldehyde resin, and ethylcarbazole formaldehyde resin.
これらの有機電荷輸送物質の他に、セレン。Besides these organic charge transport substances, selenium.
セレン−テルルアモルファスシリコン、硫化カドミウム
などの無機材料も用いることができる。Inorganic materials such as selenium-tellurium amorphous silicon and cadmium sulfide can also be used.
また、これらの電荷輸送物質は、1種または2種以上組
合せて用いることができる。Further, these charge transport substances can be used alone or in combination of two or more.
形成できる。バインダーとして使用できる樹脂は、例え
ばアクリル樹脂、ボリア(リレート。Can be formed. Examples of resins that can be used as binders include acrylic resins and boria (relate).
ポリエステル、ポリカーボネート、ポリスチレン、アク
リロニトリル−スチレンコポリマー、アクリロニトリル
−ブタジェンコポリマー、ポリビニルブチラール、ポリ
ビニルホルマール、ポリスルホン、ポリアクリルアミド
、ポリアミド、塩素化ゴムなどの絶縁性樹脂、あるいは
ポリ−N−ビニルカルバゾール、ポリビニルアントラセ
ン、ポリビニルピレンなどの有機光導電性ポリマーを挙
げることができる。Insulating resins such as polyester, polycarbonate, polystyrene, acrylonitrile-styrene copolymer, acrylonitrile-butadiene copolymer, polyvinyl butyral, polyvinyl formal, polysulfone, polyacrylamide, polyamide, chlorinated rubber, or poly-N-vinylcarbazole, polyvinylanthracene, Mention may be made of organic photoconductive polymers such as polyvinylpyrene.
電荷輸送層は、電荷キャリアを輸送できる限界があるの
で、必要以上に膜厚を厚くすることができない。一般的
には、5ミクロン〜60ミクロンであるが、好ましい範
囲は8ミクロン〜20ミクロンである。塗工によって電
荷輸送層を形成する際には、前述した様な適当なコーテ
ィング法を用いることができる。Since the charge transport layer has a limit in its ability to transport charge carriers, it cannot be made thicker than necessary. Generally it is 5 microns to 60 microns, with a preferred range of 8 microns to 20 microns. When forming the charge transport layer by coating, an appropriate coating method as described above can be used.
この様な電荷発生層と電荷輸送層の積層構造からなる感
光層は、導電層を有する基体の上に設けられる。導電層
を有する基体としては、基体自体が導電性をもつもの、
例えばアルミニウム、アルミニウム合金、銅、亜鉛、ス
テンレス。A photosensitive layer having such a laminated structure of a charge generation layer and a charge transport layer is provided on a substrate having a conductive layer. Examples of substrates having a conductive layer include those in which the substrate itself is conductive;
For example, aluminum, aluminum alloy, copper, zinc, stainless steel.
バナジウム、モリブデン、クロム、チタン、ニッケル、
インジウム、金や白金などを用いるととができ、その他
にアルミニウム、アルミニウム合金、酸化インジウム、
酸化錫、酸化インジウム−酸化、錫合金などを真空蒸着
法によって被膜形成された層を有するプラスチック(例
えばポリエチレン、ポリプロピレン、ポリ塩化ビニル、
ポリエチレンテレフタレート、アクリル樹脂、ポリフッ
化エチレンなど)、導電性粒子(例えば、カーボンブラ
ック、鋼粒子など)、を適当なバインダーとともにプラ
スチックの上に被覆した基体、導電性粒子をプラスチッ
クや紙に含浸した基体や導電性ポリマーを有するプラス
チックなどを用いることができる。vanadium, molybdenum, chromium, titanium, nickel,
It can be made using indium, gold, platinum, etc. In addition, aluminum, aluminum alloy, indium oxide,
Plastics (e.g. polyethylene, polypropylene, polyvinyl chloride,
(polyethylene terephthalate, acrylic resin, polyethylene fluoride, etc.), conductive particles (e.g. carbon black, steel particles, etc.) coated on plastic with a suitable binder, and substrates made of plastic or paper impregnated with conductive particles. or plastics containing conductive polymers.
導電層と感光層の中間に、バリヤー機能と接着機能をも
つ下引層を設りることもできる。下引層は、カゼイン、
ポリビニルアルコール、ニトロセルロース、エチレン−
アクリル酸コポリマー、ポリアミド(ナイロン6、ナイ
ロン66、ナイロン610.共重合ナイロン、アルコキ
シメチル化ナイロンなど)、ポリウレタン、ゼラチン、
酸化アルミニウムなどによって形成できる下引層の膜厚
は、0.1ミクロン〜5ミクロン。A subbing layer having barrier and adhesive functions can also be provided between the conductive layer and the photosensitive layer. The subbing layer is casein,
Polyvinyl alcohol, nitrocellulose, ethylene-
Acrylic acid copolymer, polyamide (nylon 6, nylon 66, nylon 610, copolymerized nylon, alkoxymethylated nylon, etc.), polyurethane, gelatin,
The thickness of the undercoat layer that can be formed from aluminum oxide or the like is 0.1 micron to 5 micron.
好ましくけ0.5ミクロン〜3ミクロンが適当である。Preferably, the thickness is between 0.5 micron and 3 micron.
導電層、電荷発生層、電荷輸送層の順に積層した感光体
を使用する場合において電荷輸送物質が電子輸送性物質
からなるときは、電荷輸送層表面1を正に帯電する必要
があり、帯電後露光すると露光部では電荷発生層におい
て生成した電子が電荷輸送層に注入され、そのあと表面
に達して正電荷を中和し、表面電位の減衰が生じ未露光
部との間に静電コントラストが生じる。When using a photoreceptor in which a conductive layer, a charge generation layer, and a charge transport layer are laminated in this order, and the charge transport material is an electron transport material, the surface 1 of the charge transport layer must be positively charged, and after charging, When exposed to light, electrons generated in the charge generation layer are injected into the charge transport layer in the exposed area, and then reach the surface and neutralize the positive charge, resulting in attenuation of the surface potential and an electrostatic contrast between it and the unexposed area. arise.
この様にしてできた静電潜像を負荷電性のトナーで現像
すれば可視像が得られる。これを直接定着するか、ある
いはトナー像を紙やプラスチックフィルム等に転写後、
現像し定着することができる。A visible image can be obtained by developing the electrostatic latent image thus formed with a negatively charged toner. Either fix this directly, or transfer the toner image to paper or plastic film, etc.
It can be developed and fixed.
また、感光体上の静電潜像を転写紙の絶縁層上に転写後
現像し、定着する方法もとれる。現像剤の種類や現像方
法、・定着方法は公知のものや公知の方法のいずれを採
用しても良く、特定のものに限定されるものではない。Alternatively, a method may be used in which the electrostatic latent image on the photoreceptor is transferred onto an insulating layer of transfer paper, then developed and fixed. The type of developer, developing method, and fixing method may be any known ones or known methods, and are not limited to specific ones.
一方、電荷輸送物質が正孔輸送物質から成る場合、電荷
輸送層表面を負に帯電する必要があり、帯電後、露光す
ると露光部では電荷発生層において生成した正孔が電荷
輸送層に注入され、その後表面に達して負電荷を中和し
、表面電位の減衰が生じ未露光部との間に静電コントラ
ストが生じる。現像時には電子輸送物質を用いた場合と
は逆に正電荷性トナーを用いる必要がある。On the other hand, when the charge transport material consists of a hole transport material, the surface of the charge transport layer must be negatively charged, and when exposed to light after charging, holes generated in the charge generation layer are injected into the charge transport layer in the exposed area. , which then reaches the surface and neutralizes the negative charges, resulting in attenuation of the surface potential and an electrostatic contrast between the surface potential and the unexposed area. During development, it is necessary to use a positively charged toner, contrary to the case where an electron transport material is used.
また、本発明の別の具体例では、前述のヒドラゾン類、
ピラゾリン類、オキサゾール類、チアゾール類、トリア
リールメタン類、ポリアリールアルカン類、lJフェニ
ルアミン、ポリ−N−ビニルカルバゾール類など有機光
導電性物質や酸化亜鉛、硫化カドミウム、セレンなどの
無機光導電性物質の増感剤として前述の一般式(1)で
示される化合物を含有させた有機被膜とすることができ
る。この有機被膜は、とれらの光導電性物質と前述の化
合物をバインダーとともに塗工によって被膜形成され、
また、別の具体例では、前述の一般式(りで宗さ云る化
合物を含有する有機被膜を感光層として用いることがで
きる。Further, in another specific example of the present invention, the above-mentioned hydrazones,
Organic photoconductive substances such as pyrazolines, oxazoles, thiazoles, triarylmethanes, polyarylalkanes, lJ phenylamine, poly-N-vinylcarbazoles, and inorganic photoconductive substances such as zinc oxide, cadmium sulfide, and selenium. The organic film may contain a compound represented by the above-mentioned general formula (1) as a sensitizer for the substance. This organic film is formed by coating the photoconductive substance and the above-mentioned compound together with a binder.
In another specific example, an organic film containing a compound of the general formula (Rideso) described above can be used as the photosensitive layer.
いずれの感光体においても、本発明は一般式(1)で示
される化合物から選ばれる少なくとも1種類の化合物を
含有し、必要に応じて光吸収の異なる顔料を組合せて使
用した感光体の感度を高めたり、パンクロマチックな感
光体を得るなどの目的で一般式(1)で示される化合物
を2種類以上組合せえり、または公知の染料、顔料から
選ばれた電荷発生物質と組合せて使用することも可能で
ある。In any of the photoreceptors, the present invention contains at least one compound selected from the compounds represented by the general formula (1), and if necessary, pigments with different light absorptions are used in combination to improve the sensitivity of the photoreceptor. It is also possible to use a combination of two or more types of compounds represented by general formula (1), or to use them in combination with a charge-generating substance selected from known dyes and pigments, for the purpose of increasing the photoreceptor's performance or obtaining a panchromatic photoreceptor. It is possible.
本発明の有機被膜は、前述の光デイスク記録体や電子写
真感光体のレーザ感応被膜として用いる他に、赤外線カ
ットフィルター、太陽電池あるいは光センサーなどにも
用いることができる。太陽電池は、例えば酸化インジウ
ムとアルミニウムを電極として、これらの間に前述の有
機被膜をサンドイッチ構造とすることによって調製でき
る。The organic coating of the present invention can be used not only as a laser-sensitive coating for the above-mentioned optical disk recording bodies and electrophotographic photoreceptors, but also for infrared cut filters, solar cells, optical sensors, and the like. A solar cell can be prepared, for example, by using indium oxide and aluminum as electrodes and sandwiching the above-mentioned organic film therebetween.
本発明の有機被膜は、従来のレーザ用電子写真感光体と
比較して75 Q nm以上の波長域で著しく高感度と
することができ、また従来の光デイスク記録体と比較し
ても高感度でしかも十分に改善されたS/′N比を与え
ることができる。さらに、本発明で用いる化合物は、7
50nm以上に吸収ピークを有しているにもかかわらず
、熱に対して極めて安定している利点を有している。The organic film of the present invention can have significantly higher sensitivity in the wavelength range of 75 Q nm or more compared to conventional laser electrophotographic photoreceptors, and also has higher sensitivity than conventional optical disk recording materials. Moreover, it is possible to provide a sufficiently improved S/'N ratio. Furthermore, the compound used in the present invention has 7
Although it has an absorption peak at 50 nm or more, it has the advantage of being extremely stable against heat.
以下、本発明を実施例に従って説明する。Hereinafter, the present invention will be explained according to examples.
実施例1
アルミニウムシリンダー上にカゼインのアンモとア水溶
液(カゼイン11.2g、28%アンモニア水1g、水
222m)を浸漬コーティング法で塗工し、乾燥して塗
工量1.0.9/m2 の下引層を形成した。Example 1 An aqueous solution of casein (11.2 g of casein, 1 g of 28% ammonia water, 222 m of water) was coated on an aluminum cylinder using a dip coating method, and dried to give a coating amount of 1.0.9/m2. A subbing layer was formed.
次に、前述の化合物A (5)の化合物1重量部、ブチ
ラール樹脂(エスレツクBM−2:積水化学■製)1重
量部とインプロピルアルコール30重量部をボールミル
分散機で4時間分散した。Next, 1 part by weight of the aforementioned compound A (5), 1 part by weight of butyral resin (Eslec BM-2, manufactured by Sekisui Chemical Co., Ltd.), and 30 parts by weight of inpropyl alcohol were dispersed for 4 hours using a ball mill disperser.
との分散液を先に形成しだ下引層の上に浸漬コーティン
グ法で塗工し、乾燥して電荷発生層を形成した。この時
の膜厚は0.3μであった。A dispersion of the above was first formed and coated on the subbing layer by a dip coating method, and dried to form a charge generating layer. The film thickness at this time was 0.3μ.
次に、P−ジエチルアミノベンズアルデヒド−N−フェ
ニル−N−α−ナフチルヒトラソン1重量部、ポリスル
ホン樹脂(P1700:ユニオンカーバイド社製、1重
量部とモノクロルベンゼン6重量部を混合し、攪拌機で
攪拌溶解した。この液を電荷発生層の上に浸漬コーティ
ング法で塗工し、乾燥して電荷輸送層を形成した。この
時の膜厚は、12μであった。Next, 1 part by weight of P-diethylaminobenzaldehyde-N-phenyl-N-α-naphthylhydrasone, 1 part by weight of polysulfone resin (P1700: manufactured by Union Carbide Co., Ltd.) and 6 parts by weight of monochlorobenzene were mixed and dissolved by stirring with a stirrer. This liquid was applied onto the charge generation layer by dip coating and dried to form a charge transport layer.The film thickness at this time was 12μ.
こうして調製した感光体に−5にVのコロナ放電を行な
った。この時の表面電位を測定した(初期電位Vo)。Corona discharge at -5 V was applied to the photoreceptor thus prepared. The surface potential at this time was measured (initial potential Vo).
さらに、この感光体を5秒間暗所で放置した後の表面電
位を測定した(暗減衰Vs )。感度は、暗減衰し死後
の電位v5を%に減衰するに必要な露光量(′F−%マ
イクロジュール/倒2)を測定することによって評価し
た。この際、光源としてガリウム、アルミニウム・ヒ素
半導体レーザー(発振波長780nm)を用いた。これ
らの結果は1次のとおりであった。Furthermore, the surface potential of this photoreceptor was measured after it was left in a dark place for 5 seconds (dark decay Vs). Sensitivity was evaluated by measuring the amount of exposure ('F-% microjoules/d2) required to dark decay and attenuate the post-mortem potential v5 to %. At this time, a gallium, aluminum/arsenic semiconductor laser (oscillation wavelength: 780 nm) was used as a light source. These results were as follows.
v(1: −590ボルト
v5: −5soボルト
B、:1.2fイクロジュ−/I//cm2実施例2〜
16
実施例1で用いた化合物層(5)の化合物に代えて、第
1表に示す化合物をそれぞれ用いたはかは、実施例1と
全く同様の方法で感光体を調製し、この感光体の特性を
測定した。これらの結果を第1表に示す。v(1: -590 volts v5: -5so volts B,: 1.2f icloj/I//cm2 Example 2~
16 In place of the compound in compound layer (5) used in Example 1, each of the compounds shown in Table 1 was used.A photoreceptor was prepared in exactly the same manner as in Example 1, and this photoreceptor was We measured the characteristics of These results are shown in Table 1.
第1表
2 化合物層(1) −570−5401,5
6化合物層(2) −580−5401,314化
合物層(5) 、−580−5501,65化合物層
(4) −590−5701,56化合物層(+5
) −570−5501,87化合物4(7)
−550−5301,48化合物4(8) −5
80−ssoo、99 化合物層(13) −5
70−5401;110 化合物層(14)
−560−5301,711化合物ム(15) −5
70−5361,412化合物層(16) −570
−5401,51!I 化合物層(17) −
560−530,0,9実施例前記例示化合物Vo (
V) Vs (v)F’ M(マイクロジューyv/
cm2 )14 化合物層(18) −570−
5500,815化合物層(19) −580−54
01,516化合物/16(2o) −570−54
01,2実施例17
厚さ100ミクロン厚のアルミ板上にカゼインのアンモ
ニア水溶液を塗布し、乾燥して膜厚1.1ミクロンの下
引層を形成した。Table 1 2 Compound layer (1) -570-5401,5
6 compound layer (2) -580-5401,314 compound layer (5), -580-5501,65 compound layer (4) -590-5701,56 compound layer (+5
) -570-5501,87 Compound 4 (7)
-550-5301,48 compound 4(8) -5
80-ssoo, 99 compound layer (13) -5
70-5401; 110 compound layer (14)
-560-5301,711 Compound (15) -5
70-5361,412 compound layer (16) -570
-5401,51! I compound layer (17) -
560-530,0,9 Example The above-mentioned exemplified compound Vo (
V) Vs (v)F' M (microjoule yv/
cm2)14 Compound layer (18) -570-
5500,815 compound layer (19) -580-54
01,516 compound/16(2o) -570-54
01, 2 Example 17 An ammonia aqueous solution of casein was coated on an aluminum plate with a thickness of 100 microns and dried to form a subbing layer with a thickness of 1.1 microns.
次に、2,4.7− )ジニトロ−9−フルオレノン5
IIとポリ−N−ビニルカルバゾール(数平均分子量3
00,00.0 ) 5gをテトラヒドロフラン70艷
に溶かして電荷移動錯化合物を形成また。この電荷移動
錯化合物と前述の化合物層(5)の化合物1gをポリエ
ステル樹脂(パイロン東洋紡製)5gをテトラヒドロフ
ラン70dに溶かした液に加え5分散した。・この分散
液を下引層の上に乾燥後の膜厚が12ミクロンとなる
様に塗布し、乾燥した。Next, 2,4.7-) dinitro-9-fluorenone 5
II and poly-N-vinylcarbazole (number average molecular weight 3
00,00.0 ) to form a charge transfer complex compound by dissolving 5g in 70g of tetrahydrofuran. This charge transfer complex compound and 1 g of the compound of the aforementioned compound layer (5) were added to a solution in which 5 g of polyester resin (manufactured by Pylon Toyobo) was dissolved in 70 d of tetrahydrofuran, and dispersed therein.・Place this dispersion on the undercoat layer to a film thickness of 12 microns after drying.
It was applied and dried.
ズ
こうじが調製した感光体の帯電特性を実施例1と同様の
方法で測定した。これの結果は1次のとおりであった。The charging characteristics of the photoreceptor prepared by Kouji Zuko were measured in the same manner as in Example 1. The results of this were as follows.
但し、帯電極性は■とした。However, the charging polarity was set to ■.
V(1:Q:+530ボルト
Vs: 0490ボルト
EM:4.2マイクロジユ一ル/酷2
実施例18
アルミ蒸着ポリエチレンテレフタレートフィルムのアル
ミ面上に膜厚1.1ミクロンのポリビニルアルコールの
被膜を形成した。V (1: Q: +530 volts Vs: 0490 volts EM: 4.2 microunits/unit 2 Example 18 A polyvinyl alcohol film with a thickness of 1.1 microns was formed on the aluminum surface of an aluminum vapor-deposited polyethylene terephthalate film. .
次に、実施例1で用いた前述の化合物A(5)の化合物
の分散液を先に形成したポリビニルアルコール層の上に
乾燥後の膜厚が0.5ミクロンとなる様にマイヤーバー
で塗布し、乾燥して電荷発生層を形成した。Next, a dispersion of the aforementioned compound A(5) used in Example 1 was applied onto the previously formed polyvinyl alcohol layer using a Meyer bar so that the film thickness after drying was 0.5 microns. and dried to form a charge generation layer.
次に、構造式
のピラゾリン化合物5yとボリアリレート樹脂(ビスフ
ェノールAとテレフタル酸−イソフタ隻
ル酸の縮會合体)5gをテトラヒドロフラン70m1に
溶かした液を電荷発生層の上に乾燥後の膜厚が10ミク
ロンとなる様に塗布し、乾燥して電荷輸送層を形成した
。Next, a solution prepared by dissolving pyrazoline compound 5y of the structural formula and 5 g of polyarylate resin (condensation product of bisphenol A and terephthalic acid-isophthalic acid) in 70 ml of tetrahydrofuran was placed on the charge generation layer to give a film thickness after drying. It was applied to a thickness of 10 microns and dried to form a charge transport layer.
こうして調製した感光体の帯電特性を実施例1と同様の
方法によって測定した。これの結果は、次のとおりであ
った。The charging characteristics of the photoreceptor thus prepared were measured in the same manner as in Example 1. The results of this were as follows.
vo : −540ボルト
Vs: −510ボルト
F、%:2,4マイクロジュール/32前述の各実施例
から判るとおり、本発明の電子写真感光体は、750
nm以上の波長域で著しい高感度特性を有するとともに
、初期電位や暗減良などの帯電特性に優れている。vo: -540 volts Vs: -510 volts F, %: 2.4 microjoules/32 As can be seen from the above-mentioned examples, the electrophotographic photoreceptor of the present invention has a voltage of 750 volts.
It has remarkable high sensitivity characteristics in the wavelength range of nm or more, and has excellent charging characteristics such as initial potential and dark reduction quality.
実施例19
=)ロセルロース溶液(ダイセル化学工業■製;オーハ
ーレスラッカー二ニトロセルロース25重量%のメチル
エチルケトン溶液12重量部、前述の化合物* (5)
の化合物6重量部およびメチルエチルケトン70重量部
を混合し、十分に分散した。この分散液をアルミ蒸着ガ
ラス板上に浸漬コーティング法によシ塗布した後、乾燥
して0.6g/m2の記録層を得た。Example 19 =) Cellulose solution (manufactured by Daicel Chemical Industries, Ltd.; Ohares Lacquer 12 parts by weight of a 25% by weight dinitrocellulose solution in methyl ethyl ketone, the above-mentioned compound* (5)
6 parts by weight of the compound and 70 parts by weight of methyl ethyl ketone were mixed and sufficiently dispersed. This dispersion was coated on an aluminized glass plate by dip coating and dried to obtain a recording layer of 0.6 g/m2.
こうして作成した光デイスク記録体をターンテーブル上
に取り付け、ターンテーブルをモータf1800rpm
の回転を与えながら、スポットサイズ1.0ミクロンに
集束した5mWおよび8MHzのガリウムーアルミニウ
ムーヒ素半導体レーザ(発振波長780 nm )を記
録層面にトラック状で照射して記録を行なった。The optical disc recording medium thus created was mounted on a turntable, and the turntable was turned on with a motor f1800 rpm.
Recording was performed by irradiating the surface of the recording layer in a track shape with a 5 mW and 8 MHz gallium-aluminum-arsenide semiconductor laser (oscillation wavelength: 780 nm) focused to a spot size of 1.0 microns while giving a rotation of .
この記録された光ディスクの表面を走査型電子顕微鏡で
観察しだところ、鮮明なビットが認められた。また、こ
の光ディスクに低出力のガリウムーアルミニウムーヒ素
半導体レーザを入射し1反射光の検知を行なったところ
、十分なS/′N比を有する波形が得られた。When the surface of this recorded optical disc was observed using a scanning electron microscope, clear bits were observed. Furthermore, when a low-output gallium-aluminum-arsenide semiconductor laser was incident on this optical disk and one reflected light was detected, a waveform with a sufficient S/'N ratio was obtained.
実施例20
前述の化合物層(7)の化合物500■を蒸着用モリブ
デンボー)K入れ、lX10 朋HF 以下に排気し
た後、アルミ蒸着ガラス板に蒸着した。蒸着中は真空室
内の圧力が10−5mHf以−ヒに上昇しない様にヒー
ターを制御しながら、0.2ミクロンの蒸着膜を形成さ
せた。Example 20 500 μm of the compound of the compound layer (7) described above was added to molybdenum powder for vapor deposition, and the mixture was evacuated to less than 1×10 HF, and then vapor-deposited on an aluminum-deposited glass plate. During the deposition, the heater was controlled so that the pressure in the vacuum chamber did not rise above 10@-5 mHf, and a 0.2 micron thick deposited film was formed.
そして作成した光デイスク記録体に実施例1と同様の方
法で情報を記憶させたところ、実施例19と同様の鮮明
なビットが認められ、また実施例19と同様の方法で情
報を再生したが、この際十分−fi S/N比を有する
波形が認められた。When information was stored on the produced optical disc recording medium in the same manner as in Example 1, clear bits similar to those in Example 19 were observed, and information was reproduced in the same manner as in Example 19. At this time, a waveform with a sufficient -fi S/N ratio was observed.
実施例21
前述の化合物ム(5)の化合物を実施例2oと同様の方
法でアルミ蒸着ガラス板の上に蒸着して、0.2ミクロ
ンの記録層を有する光デイスク記録体を作成した。Example 21 The above-mentioned compound (5) was vapor-deposited on an aluminum-deposited glass plate in the same manner as in Example 2o to prepare an optical disc recording medium having a recording layer of 0.2 microns.
この光デイスク記録体に実施例19と同様の方法で情報
を記憶させてから、再生したところ、十分なS/)J比
を有する波形が認められた。又、情報を書き込みした後
の記録層面を走査型電子顕微鏡で観察したところ、鮮明
なビットが形成されていた。When information was stored on this optical disk recording medium in the same manner as in Example 19 and then reproduced, a waveform with a sufficient S/)J ratio was observed. Further, when the surface of the recording layer after information was written was observed with a scanning electron microscope, clear bits were found to have been formed.
実施例22
前述の化合物4(13)の化合物を実施例20と同様の
方法でアルミ蒸着ガラス板の上に蒸着して、0.2ミク
ロンの記録層を有する光デイスク記録体を作成した。Example 22 The above-mentioned compound 4 (13) was vapor-deposited on an aluminum-deposited glass plate in the same manner as in Example 20 to produce an optical disc recording medium having a recording layer of 0.2 microns.
この光デイスク記録体に実施例19と同様の方法で情報
を記憶させてから、再生したととる、十分なりA比を有
する波形が認められた。又、情報を書き込みした後の記
録層面を走査型電子顕微鏡で観察しだところ、鮮明なビ
ットが形成されていた。A waveform with a sufficient A ratio was observed, indicating that information was recorded on this optical disc recording medium in the same manner as in Example 19 and then reproduced. Furthermore, when the surface of the recording layer on which information had been written was observed using a scanning electron microscope, clear bits were found to have been formed.
実施例23
前述の化合物A(15)の化合物を実施例20と同様の
方法でアルミ蒸着ガラス板の上に蒸着して、0.2ミク
ロンの記録層を有する光デイスク記録体を作成した。Example 23 The above-mentioned compound A (15) was vapor-deposited on an aluminum-deposited glass plate in the same manner as in Example 20 to produce an optical disk recording medium having a recording layer of 0.2 microns.
この光デイスク記録体に実施例19と同様の方法で情報
を記憶させてから、再生したところ、十分なs、M比を
肩する波形が認められた。又、情報を書き込みした後の
記録層面を走査型電子顕微鏡で観察したところ、鮮明な
ビットが形成されていた。When information was stored on this optical disk recording medium in the same manner as in Example 19 and then reproduced, a waveform with sufficient s and M ratios was observed. Further, when the surface of the recording layer after information was written was observed with a scanning electron microscope, clear bits were found to have been formed.
実施例24
前記例示の化合物4 (5)の化合物2.0Iとポリ(
4,4’−イソプロピリデンジフエニレンカーボネー)
)2.0#を攪拌下にジクロルメタン100−に溶解し
た。この溶液に50gのトルエンを加えて沈澱させ、さ
らにこの沈澱物を再溶解するために充分なジクロルメタ
ンを注入した後、n−ヘキサン500gを攪拌下に注入
したところ、紫青の結晶が析出した。この結晶を戸別し
た後、再結晶を繰シ返しだ。Example 24 Compound 2.0I of the exemplified compound 4 (5) and poly(
4,4'-isopropylidene diphenylene carbonate)
) 2.0# was dissolved in dichloromethane 100° while stirring. 50 g of toluene was added to this solution to precipitate it, and after injecting enough dichloromethane to redissolve the precipitate, 500 g of n-hexane was injected with stirring, and purple-blue crystals were precipitated. After distributing this crystal from house to house, it is recrystallized repeatedly.
この結晶を前述の実施例19で用いた化合物A (5)
の化合物に代えて用いたほかは、実施例19と全く同様
の方法で光デイスク記録体を作成してから、情報記録お
よび再生を繰り返した結果、同様の結果が得られた。Compound A (5) using this crystal in Example 19 above
An optical disk recording medium was prepared in exactly the same manner as in Example 19, except that the compound was used in place of the following compound, and then information recording and reproduction were repeated, and the same results were obtained.
実施例25
実施例24で調製した共晶錯体を実施例1で用いた化合
物4 (5)の化合物に代えて用いたほかは、実施例1
と全く同様の方法で感光体を調製し、この感光体の特性
を測定した。この時の結果は、次のとおりであった。Example 25 Example 1 except that the eutectic complex prepared in Example 24 was used in place of compound 4 (5) used in Example 1.
A photoreceptor was prepared in exactly the same manner as described above, and the characteristics of this photoreceptor were measured. The results at this time were as follows.
Vn: −590ボルト V5: −550ボルト Eに:0.8マイクロジュール/信2Vn: -590 volts V5: -550 volts To E: 0.8 microjoules/trust 2
第1図および第2図は、本発明の有機被膜を光デイスク
記録体に用いた時の断面図で、第6図はこの光デイスク
記録体の実施態様を示す説明図である。第4図は、化合
物腐(7)の赤外線吸収スペクトルを示す説明図である
。
1・・・基板
2・・・有機被膜
3・・・反射層
4・・・レーザ光線
5・・・ビット □1 and 2 are cross-sectional views when the organic coating of the present invention is used in an optical disk recording medium, and FIG. 6 is an explanatory view showing an embodiment of this optical disk recording medium. FIG. 4 is an explanatory diagram showing an infrared absorption spectrum of compound rot (7). 1...Substrate 2...Organic coating 3...Reflection layer 4...Laser beam 5...Bit □
Claims (1)
徴とする有機被膜。 一般式(1) X、およびX2は硫黄原子、酸素原子又はセレン原子を
示す。2.はそれぞれ置換されてもよいピリリウム、チ
オピリリウム、セレナピリリウム、ベンゾピリリウム、
ベンゾチオピリリウム、ベンゾセレナピリリウム、ナフ
トピリリウム、ナフトチオピリリウム又はナフトセレナ
ピリリウムを完成するに必要な原子群を示す、z2は、
それぞれ置換されてもよいビラン、チオビラン、セレナ
ピツン、ベンゾビラン、ベンゾチオビラン、ベンゾセレ
ナビラン、ナフトピラン、ナフトチオビラン又はナフト
セレナビランを完成するに必要な原子群を示す。R,、
R2,R,およびR4は、水素原子、アルキル基、アル
コキシ基、置換もしくは未置換のアリール基、置換もし
くは未置換のスチリル基、置換もしくは未置換の4−フ
ェニル−1,5−ブタジェニル基又は置換もしくは未置
換の複素環基を示す。又、R1とR2で置換もしくは未
置換のベンゼン環を形成してもよく、又R5とR4で置
換もしくは未置換のベンゼン環を形成してもよい。mお
よびnは、1又は2である。)[Scope of Claims] An organic film characterized by containing a compound represented by the following general formula (1). General formula (1) X and X2 represent a sulfur atom, an oxygen atom or a selenium atom. 2. are optionally substituted pyrylium, thiopyrylium, selenapyrylium, benzopyrylium,
z2 represents the atomic group necessary to complete benzothiopyrylium, benzoselenapyrylium, naphthopyryllium, naphthothiopyrylium or naphthoselenapyrylium,
The atomic groups necessary to complete biran, thiobilane, selenapyran, benzobylane, benzothiobilane, benzoselenabilane, naphthopyran, naphthothiobilane, or naphthoselenabilane, which may each be substituted, are shown. R,,
R2, R, and R4 are a hydrogen atom, an alkyl group, an alkoxy group, a substituted or unsubstituted aryl group, a substituted or unsubstituted styryl group, a substituted or unsubstituted 4-phenyl-1,5-butadienyl group, or a substituted Or it represents an unsubstituted heterocyclic group. Further, R1 and R2 may form a substituted or unsubstituted benzene ring, and R5 and R4 may form a substituted or unsubstituted benzene ring. m and n are 1 or 2. )
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57103604A JPS58220143A (en) | 1982-06-16 | 1982-06-16 | Organic film |
US07/512,587 US5079127A (en) | 1982-04-06 | 1989-04-24 | Optical recording medium and process for recording thereupon |
US07/512,588 US5079128A (en) | 1982-04-06 | 1990-04-24 | Optical recording medium and process for recording thereupon |
US07/769,636 US5246814A (en) | 1982-04-06 | 1991-10-01 | Process for recording on optical recording medium |
US07/769,397 US5278026A (en) | 1982-04-06 | 1991-10-01 | Optical recording medium and process for recording thereupon |
US08/086,113 US5320930A (en) | 1982-04-06 | 1993-07-06 | Optical recording medium and process for recording thereon |
US08/221,904 US5382497A (en) | 1982-04-06 | 1994-04-01 | Optical recording medium and process for recording thereupon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57103604A JPS58220143A (en) | 1982-06-16 | 1982-06-16 | Organic film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58220143A true JPS58220143A (en) | 1983-12-21 |
JPH0211140B2 JPH0211140B2 (en) | 1990-03-13 |
Family
ID=14358372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57103604A Granted JPS58220143A (en) | 1982-04-06 | 1982-06-16 | Organic film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58220143A (en) |
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