JPS5821824A - Wafer alignment method - Google Patents

Wafer alignment method

Info

Publication number
JPS5821824A
JPS5821824A JP56120641A JP12064181A JPS5821824A JP S5821824 A JPS5821824 A JP S5821824A JP 56120641 A JP56120641 A JP 56120641A JP 12064181 A JP12064181 A JP 12064181A JP S5821824 A JPS5821824 A JP S5821824A
Authority
JP
Japan
Prior art keywords
mask
chuck
alignment
mark
neutral position
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56120641A
Other languages
Japanese (ja)
Inventor
Hiroyuki Funatsu
舟津 博幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56120641A priority Critical patent/JPS5821824A/en
Publication of JPS5821824A publication Critical patent/JPS5821824A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To allow the array of a mask to be highly reproducibly positioned at the same place in the first exposure, by a method wherein before the mask is fixed, a mask chuck is returned to a neutral position by employing a return mark provided thereto. CONSTITUTION:A mask 41 has a pattern array 42, and alignment marks 43 are provided at predetermined positions corresponding to the coordinates of the pattern array 42. A mask chuck 44 is provided with a return mark 45 for returning the mask chuck 44 to a neutral position before fixing the mask 41, together with alignment targets 46, the return mark 45 and the alignment targets 46 being disposed at positions different from each other. To carry out the first lithography, the chuck 44 is returned to the neutral position by employing the return mark 45 provided thereto. Then, the target 46 provided to the chuck 44 and the marks 43 are aligned with each other by moving the mark 41, and the mask 41 is fixed to the chuck 44.

Description

【発明の詳細な説明】 この発明は、半導体装置の製造におけるウェハアライメ
ント方法の改良に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a wafer alignment method in the manufacture of semiconductor devices.

従来のウェハアライメント方法は、ガラス板上にパター
ニングされたマスクを、ホルダに装填しまたは直接アラ
イナのマスクチャックにセットしている。しかし、この
従来の方法では、第1図に示すように、マスク11がチ
ャック[2に装填される時に、ウェハ中心にX方向のロ
ート9誤差16゜X方向のロート9誤差15および結晶
軸を定めるオリエンテーションフラットに対して回転誤
差14が発生するという問題があった。また、マスクポ
ジション固定用ビン、検出部17も装rift Kより
固有の位置にあり、このため、ウェハ上にiJ?ターン
ア1/イ13′f!:再現性よく位置決めすることがむ
ずかしかった。さらに第2図のように、マスク21の)
9ターンア1/イ22は、マスクの製作時にできた回転
誤差23.X位置誤差?もっている。したがって、第1
回目の4元を行なう時のウェハば、第3図1C例示する
ように、各ロットごとに1ちまちの位置に配置されると
めう問題があった。
In the conventional wafer alignment method, a mask patterned on a glass plate is loaded into a holder or directly set on a mask chuck of an aligner. However, in this conventional method, as shown in FIG. 1, when the mask 11 is loaded onto the chuck [2, the funnel 9 error 16° in the X direction, the funnel 9 error 15 in the X direction, and the crystal axis are centered on the wafer. There is a problem in that a rotation error 14 occurs with respect to the determined orientation flat. In addition, the mask position fixing bin and the detection unit 17 are also located at a unique position from the mounting rift K, so that the iJ? Turn a 1/i 13'f! : It was difficult to position with good reproducibility. Furthermore, as shown in FIG. 2, the mask 21)
9th turn A1/I22 is due to rotational error 23. made during mask manufacturing. X position error? I have it. Therefore, the first
There was a problem in that the wafers during the second four-dimensional process were placed at different positions for each lot, as illustrated in FIG. 3, 1C.

この発明は、マスクの目標とマスクチャックに設けた゛
アライメントターゲットとを合せてマスクチャックにマ
スク全固定すると共に、マスクチャックに設けた復帰用
マーク全周いてマスクを固定する前にマスクチャックを
ニュートラルの位置に復帰させることによp、第1回目
の露光時にマスクのア1/イ位置を再現性よく同一の場
所に来るようにし7ζワエハアライメント方法を提供1
−ることを目的としてい75゜ 以下、この発明の一実施例につき第4図全参照して説明
する。
In this invention, the target of the mask and the alignment target provided on the mask chuck are aligned to completely fix the mask to the mask chuck, and the mask chuck is moved to the neutral position before fixing the mask by moving around the return mark provided on the mask chuck. By returning to the position, the A1/A position of the mask is brought to the same position with good reproducibility during the first exposure, thereby providing a 7ζwafer alignment method 1
- 75 degrees or less, one embodiment of the present invention will be described with full reference to FIG.

第4図にふ−いて%41&エマスクであり、との−マス
ク41に(α)!ターンアl/イ42があり、こil、
の座標と対応する所定位置にアライメントマーク43が
設けである。才た44はマスクチャックであり。
According to Figure 4, it is %41 & em mask, and -mask 41 (α)! There is a turn A/I 42, this is,
An alignment mark 43 is provided at a predetermined position corresponding to the coordinates. 44 years old is a mask chuck.

このチャック44にはマスク41を固定する前Vこニュ
ートラル位置に復・帰させろだめの復帰14]マーク4
5と、アライメントターゲット46とが互に異なつf−
、位置に設けてあう。なお、47(1アライメントスコ
一プ%48はポジションアライメソト用光源(図示せず
)からの投射光を通す半透鏡(ハーフミラ−)である。
Before fixing the mask 41, this chuck 44 has a V mark 4 indicating that the mask should be returned to the neutral position.
5 and the alignment target 46 are different from each other f-
, located at the same location. Note that 47 (1 alignment scope %) 48 is a semi-transparent mirror that passes projection light from a position alignment method light source (not shown).

そして、この冥施列では、第1回目のフオ) IJソグ
ラフーイを行なうに当り、マスクチャック44をこれに
設けた復帰用マーク45を用いてニュートラルの位置へ
復帰させ、その後、マスクチャック44に設けたアライ
メントターダット46とマスク4Iのアライメントマー
ク43とをマスク41を動かして合せ、バキューム吸着
たどの適宜の方法でマスクチャック441cマスク41
を固定する。
In this ritual process, when performing the first IJ sographie, the mask chuck 44 is returned to the neutral position using the return mark 45 provided on the mask chuck 44, and then Move the mask 41 to align the alignment dots 46 and the alignment marks 43 of the mask 4I, and use an appropriate method such as vacuum suction to attach the mask chuck 441c to the mask 41.
to be fixed.

さらに、i’jT 記’アライメントマーク43と、ウ
ェハを装着したウェハチャック(]ゴ1示せず)のアラ
イメソト茎傳マークとが重々9合うようにして、マスク
とウェハチャックとヲ位1炸決めし、第1回目のP ;
’t’l−を行なう、なお、前述したマスクとウェア1
チンツクとの位置決め(丁、この発明の出願人が先に出
門しノマニ特1f!’m昭5 !3 95920−号に
言己載した方法によることが好寸しい、。
Furthermore, the mask and wafer chuck are positioned so that the alignment mark 43 and the alignment mark 43 of the wafer chuck (not shown) on which the wafer is mounted are closely aligned. , 1st P ;
't'l-, please note the above mask and wear 1.
It is preferable that the applicant of the present invention first set out the positioning with the chin and use the method described in No. 1F!'M No. 95920-, published in 1973.

な5ご、この発明において、マスク4]には必ずしもア
ライメントマーク43を設けることなく、マースフのス
クライブラインなどを目標に【うてモヨい。
In addition, in this invention, the alignment mark 43 is not necessarily provided on the mask 4, and the alignment mark 43 is not necessarily provided on the mask 4, but the alignment mark 43 is targeted at the scribe line of Mars.

以上説明したように、この発明の方法によれば、マスク
を固定する前にマスクチャックをこれに設けた復・局側
マークを用いてニュートラルの位置に復帰させるようI
Cしたので、マスクチャックを高精度で再現性よく復帰
させることができ、゛またマスクのアライメントマーク
、スクライブラインの工う々目橢と前ン己マスクチャッ
クの゛アライメントマーケ9ツトとを合せて、マスクチ
ャックにマスクを取付け、う、Lうに!−だので、これ
ら2制;j′Δ度で14現性よく位置決め′することプ
・(でき、ウェハ上の・・ぐターノア1./イの位置ヲ
すべでのアライナ−C1同−位i VCコンl−D−ル
することが可能となり、したがって、アライナ相互での
)?ターソア1ノ・f位置が統一されることに1′す、
アラ1′す())互シーイ1法が同上すると共に、第2
回目JJ降のアレイメン) ’d9 ft1jの短縮を
にかることができるという幼芽が91)られ、とくにオ
ートアライメント方式充用いた場合に2′ループツトが
同士する利虚が得られる。
As explained above, according to the method of the present invention, before fixing the mask, the mask chuck is returned to the neutral position using the return/station side mark provided thereon.
C, the mask chuck can be returned with high precision and good reproducibility, and by combining the mask alignment mark and scribe line machining with the previous mask chuck's alignment mark. , Attach the mask to the mask chuck and, uh, L sea urchin! -Therefore, these two systems; It becomes possible to control the VC control and therefore the alignment between the aligners)? I'm glad that the positions of Tersoor 1 and f will be unified.
Ara 1'su()) Mutual Shii 1 law is the same as above, and
The seedlings that can be used to shorten the ``d9 ft1j'' of the 2nd JJ descending array member 91) have been found, and especially when the auto-alignment method is used, the advantage of making the 2' loops the same can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図に従来のウエハアライメソト方法によるマスクが
ロート°されたポジションを示す正面図。 第2図にマスクのA’ターンア1ノイ誤差を示す図。 第3図にウェハ上のパターンアレイの誤差を示す図、第
4図はこの発明の一実施例によるつ°エバアライメント
方法の説明図である。 41・・・マスク、42・・・ノ43’−7”71//
(,43・・・アライメントマーク、44・・・マスク
チャック。 45・・・復帰用マーク、46・・・アライメントター
ダット。
FIG. 1 is a front view showing the position in which the mask is rotated by the conventional wafer alignment method. FIG. 2 is a diagram showing the A' turn one noise error of the mask. FIG. 3 is a diagram showing errors in a pattern array on a wafer, and FIG. 4 is an explanatory diagram of an evaporative alignment method according to an embodiment of the present invention. 41...Mask, 42...ノ43'-7"71//
(, 43... Alignment mark, 44... Mask chuck. 45... Return mark, 46... Alignment tart.

Claims (1)

【特許請求の範囲】 半導体装置の製造におけるアライナにおいて。 マスクは・やターノア1/イに対応する所定位置にアラ
イメントマーク、スクライプラインのような目標ヲ有し
、マスクチャックには前記目ffl’eアライメントさ
せる位置にアライメントターゲットを設け、前記目標と
ターゲットとを合せてマスクチャックにマスクを取付け
ると共に、マスクチャックに設けた復帰用マークを用い
てマスクを固定する前にマスクチャックをニュートラル
の位置に復帰させることを特徴とするウェハアライメン
ト方法。
[Claims] In an aligner for manufacturing semiconductor devices. The mask has a target such as an alignment mark or a scribe line at a predetermined position corresponding to the turnor 1/a, and an alignment target is provided on the mask chuck at a position where the eye ffl'e is aligned, and the target is A wafer alignment method characterized in that the mask is attached to the mask chuck by adjusting the mask chuck, and the mask chuck is returned to a neutral position using a return mark provided on the mask chuck before fixing the mask.
JP56120641A 1981-08-03 1981-08-03 Wafer alignment method Pending JPS5821824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56120641A JPS5821824A (en) 1981-08-03 1981-08-03 Wafer alignment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56120641A JPS5821824A (en) 1981-08-03 1981-08-03 Wafer alignment method

Publications (1)

Publication Number Publication Date
JPS5821824A true JPS5821824A (en) 1983-02-08

Family

ID=14791243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56120641A Pending JPS5821824A (en) 1981-08-03 1981-08-03 Wafer alignment method

Country Status (1)

Country Link
JP (1) JPS5821824A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6360519A (en) * 1986-08-30 1988-03-16 Sony Corp Annealing method
EP1852746A2 (en) * 2006-05-05 2007-11-07 ASML Netherlands B.V. Lithographic apparatus and method
JP2008113046A (en) * 2003-10-27 2008-05-15 Asml Netherlands Bv Assembly of reticle holder and reticle
US7839489B2 (en) 2003-10-27 2010-11-23 Asml Netherlands B.V. Assembly of a reticle holder and a reticle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132358A (en) * 1977-04-20 1978-11-18 Thomson Csf Object positioning device of projector
JPS563711U (en) * 1980-05-27 1981-01-13

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132358A (en) * 1977-04-20 1978-11-18 Thomson Csf Object positioning device of projector
JPS563711U (en) * 1980-05-27 1981-01-13

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6360519A (en) * 1986-08-30 1988-03-16 Sony Corp Annealing method
JP2008113046A (en) * 2003-10-27 2008-05-15 Asml Netherlands Bv Assembly of reticle holder and reticle
US7839489B2 (en) 2003-10-27 2010-11-23 Asml Netherlands B.V. Assembly of a reticle holder and a reticle
EP1852746A2 (en) * 2006-05-05 2007-11-07 ASML Netherlands B.V. Lithographic apparatus and method
EP1852746A3 (en) * 2006-05-05 2007-12-19 ASML Netherlands B.V. Lithographic apparatus and method

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