JPS58216246A - Continuous formation of oxide film - Google Patents
Continuous formation of oxide filmInfo
- Publication number
- JPS58216246A JPS58216246A JP57100425A JP10042582A JPS58216246A JP S58216246 A JPS58216246 A JP S58216246A JP 57100425 A JP57100425 A JP 57100425A JP 10042582 A JP10042582 A JP 10042582A JP S58216246 A JPS58216246 A JP S58216246A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- chromium
- film
- pure chromium
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の技術分野
本発明は連続酸化膜形成方法、詳しくは連続（１）
的に酸化膜をスパッタリングにより成長する方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method for forming a continuous oxide film, and more particularly to a method for (1) continuously growing an oxide film by sputtering.
（２）技術の背景
集積回路（ＩＣ）の製作に使われるメタルマスク（ハー
ドマスク）は、ガラス基板上の純クロム膜上に酸化クロ
ム膜を形成するいわゆる低反射処理が施される例が多い
。(2) Background of the technology Metal masks (hard masks) used in the production of integrated circuits (ICs) are often treated with so-called low-reflection treatment, which forms a chromium oxide film on a pure chromium film on a glass substrate. .
例工ばＩＣの製作においてウェハ上にアルミニウム（ｉ
）の膜が形成されている場合、低反射処理がなされず純
クロムのみのパターンが形成されたメタルマスクを通し
てウェハに照射された紫外線はｌの反射率が高いためｉ
によって反射され、この反射光がマスクの純クロム（Ｃ
ｒ）に照射される。クロムもまた反射率が高いから前記
反射光は純クロム膜によって反射される。かくしてウェ
ハとメタルマスクとの間で内部反射が発生し、その結果
パターン精度が悪くなる。For example, in the production of ICs, aluminum (i) is placed on a wafer.
) is formed, the ultraviolet rays irradiated onto the wafer through a metal mask with a pure chromium pattern without low-reflection treatment have a high reflectance of i.
This reflected light is reflected by the pure chromium (C) of the mask.
r). Since chromium also has a high reflectance, the reflected light is reflected by the pure chromium film. Internal reflections thus occur between the wafer and the metal mask, resulting in poor pattern accuracy.
上記欠点を解決するために、純クロムの表面上に酸化ク
ロム（Ｃｒｕｘ）の膜を第１図の断面図に示されるよう
に成長する。なお同図において、１（２）
はガラス基板、２は純クロム膜、３は酸化クロム膜を示
し、通常純クロム膜２と酸化クロム膜３とを合せたもの
の膜厚は０．１μｍ程度ときわめて薄いものである。酸
化クロム膜を形成する理由は、酸化クロム膜の表面で反
射する光と、はぼ透明に近い酸化クロム膜を透過し純ク
ロム膜で反射される光との干渉により、ウェハの露光に
用いる水銀灯の波長帯で反射率を最も低く抑えることが
可能であるからで、酸化クロム膜を上記の如く用い反射
率を１０％程度に低下しうろことが確認されている。In order to solve the above drawbacks, a chromium oxide (Crux) film is grown on the surface of pure chromium as shown in the cross-sectional view of FIG. In the figure, 1 (2) is a glass substrate, 2 is a pure chromium film, and 3 is a chromium oxide film. Normally, the combined film thickness of pure chromium film 2 and chromium oxide film 3 is about 0.1 μm. It is extremely thin. The reason why a chromium oxide film is formed is that the light reflected from the surface of the chromium oxide film interferes with the light that passes through the almost transparent chromium oxide film and is reflected by the pure chromium film. This is because it is possible to suppress the reflectance to the lowest level in the wavelength band of 100%, and it has been confirmed that the reflectance can be reduced to about 10% by using a chromium oxide film as described above.
上記したメタルマスクの製作には第２図の配置図に示さ
れる装置を用いる。なお同図以下において、既に示され
た部分と同しものは同じ符号を付して示す。同図におい
て、１１はアルゴン（Ａｒ）ガスのガスボックス、１２
は酸素（０２）ガスのガスボックス、１３はオートマス
フローメータ（流量計）、１４と１５はバルブ、１６は
真空室を示し、これらはパイプで連結されている。流量
計１３によりアルゴンガス、酸素ガスの一定量が真空室
１６に送られ、（３）
真空室１６内でスパッタリングが行われ、バルブ１４．
１５の開閉でガスの切り換えをなす。The apparatus shown in the layout diagram of FIG. 2 is used to manufacture the metal mask described above. Note that in the figures and subsequent figures, the same parts as those already shown are designated by the same reference numerals. In the figure, 11 is an argon (Ar) gas box, 12
1 is a gas box for oxygen (02) gas, 13 is an automatic mass flow meter (flow meter), 14 and 15 are valves, and 16 is a vacuum chamber, which are connected by a pipe. A certain amount of argon gas and oxygen gas is sent to the vacuum chamber 16 by the flow meter 13, (3) sputtering is performed in the vacuum chamber 16, and the valve 14.
The gas is switched by opening and closing 15.
操作においては、アルゴンガスで純クロムをスパッタリ
ングしてガラス基板に付着し、スパッタリングを一時中
断させ、酸素ガスを入れてからスパッタリングを再開し
、酸化クロムを純クロムの上に付着させる。こうするこ
との理由は、酸素ガスのための流量計１３とバルブ１５
の間のパイプ内に酸素ガスが充満しており、バルブ１５
を開けると一時的に真空室１６内の真空度が悪くなり、
スパッタリングを維持しえなくなるからである。In operation, pure chromium is sputtered onto a glass substrate using argon gas, sputtering is temporarily interrupted, oxygen gas is introduced, and sputtering is resumed to deposit chromium oxide onto the pure chromium. The reason for this is that the flow meter 13 and valve 15 for oxygen gas
The pipe between the valves 15 and 15 is filled with oxygen gas.
If you open it, the degree of vacuum inside the vacuum chamber 16 will deteriorate temporarily,
This is because sputtering cannot be maintained.
（３）従来技術と問題点
前記したスパッタリングの一時的中断なく連続して純ク
ロムのスパッタリング中に酸素ガスが加えられたとき、
純クロム膜と酸化クロム膜との境界はゆるやかに（漸進
的）に純クロムから酸化クロムに変る。このような膜を
エツチングすると、第１図に斜線４で示すようなテーバ
したエツチングが進行し、かくして形成されたパターン
を上から見ると第３図に示す如き形状となる。(3) Prior art and problems When oxygen gas is added during sputtering of pure chromium continuously without any temporary interruption of the sputtering described above,
At the boundary between the pure chromium film and the chromium oxide film, pure chromium changes gradually (gradually) to chromium oxide. When such a film is etched, tapered etching progresses as shown by diagonal lines 4 in FIG. 1, and the pattern thus formed has a shape as shown in FIG. 3 when viewed from above.
（４）
ところが、上記したスパッタリングの一時的中断がある
と、純クロム膜と酸化クロム膜の境界は第１図の断面図
に示す如く異質の２物質が重なった如くにはっきりした
ものとなる。かかる構成の膜をエツチングすると、エツ
チング液が境界にしみ込んで、第４図の断面で示される
構造が得られる。図にＰで示される幅がパターン幅であ
るが、このパターン幅はガラス基板１の事後の処理の間
に損傷されて本来のパターンとは異なったものとなる事
例が多い。また酸化クロム膜は図示の如くひさし状にな
っていて、低反射膜としての機能を果しえない。(4) However, when the above-mentioned sputtering is temporarily interrupted, the boundary between the pure chromium film and the chromium oxide film becomes sharp, as if two different substances were overlapped, as shown in the cross-sectional view of FIG. When a film with such a configuration is etched, the etching solution penetrates into the boundaries, resulting in the structure shown in the cross section of FIG. The width indicated by P in the figure is the pattern width, but this pattern width is often damaged during subsequent processing of the glass substrate 1 and becomes different from the original pattern. Furthermore, the chromium oxide film has an eave-like shape as shown in the figure, and cannot function as a low-reflection film.
更に、最近のマスク製作においては、ウェハの大口径化
に伴いマスクも大型になり、従来のバッチ処理による複
数個マスクの製作に代え、マスク１枚毎の処理がなされ
、かかる処理をライン作業でなすについては１秒程度の
時間の損失が問題とされる。ところで前述したスパッタ
リングの中断があると、スパッタリングの再開のとき電
圧調整等にかなりの時間が浪費され、それがライン作（
５）
業の支障となるという問題もある。Furthermore, in recent mask manufacturing, as wafer diameters have increased, masks have also become larger, and instead of manufacturing multiple masks using conventional batch processing, each mask is processed individually, and this processing can now be done on line operations. For eggplant, the loss of time of about 1 second is considered a problem. By the way, if the sputtering is interrupted as mentioned above, a considerable amount of time is wasted adjusting the voltage when restarting the sputtering, which causes line operation (
5) There is also the problem of hindering business operations.
（４）発明の目的
本発明は上記従来の欠点に鑑み、１０Ｍ作に用いるメタ
ルマスクの表面に低反射処理を施すためのガラス基板上
の純クロム膜と酸化クロム膜の成長において、これらの
膜の成長のためのスパッタリングを中断することなく連
続して行いうる方法を提供するにある。(4) Purpose of the Invention In view of the above-mentioned conventional drawbacks, the present invention provides a method for growing a pure chromium film and a chromium oxide film on a glass substrate for applying low reflection treatment to the surface of a metal mask used in 10M production. An object of the present invention is to provide a method that allows continuous sputtering for the growth of .
（５）発明の構成
そしてこの目的は本発明によれば、アルゴンガスおよび
酸素ガスを真空室に供給するパイプ系において、真空室
への前記ガスの供給、停止のために開閉される真空室側
バルブとガスの流量針の中間において、前記バルブと流
量計の間のパイプ内に充満するガスを常時排気し、スパ
ッタリングをなすときは前記排気を停止し、前記バルブ
を開いて真空室にアルゴンガスまたは酸素ガスを供給す
る方法を提供することによって達成される。(5) Structure and object of the invention According to the present invention, in a pipe system for supplying argon gas and oxygen gas to a vacuum chamber, the side of the vacuum chamber is opened and closed to supply and stop the gases to the vacuum chamber. Between the valve and the gas flow needle, the gas filling the pipe between the valve and the flowmeter is constantly exhausted, and when performing sputtering, the exhaust is stopped, and the valve is opened to supply argon gas to the vacuum chamber. Or by providing a method for supplying oxygen gas.
（６）発明の実施例 以下本発明の実施例を図面によって詳述する。(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.
（６）
第５図に本発明の方法を実施する装置の配置を示す。第
２図に示した装置の場合と同様に、１１はアルゴンガス
のガスボックス、１２は酸素ガスのガスボックス、１３
は流量計、１４と１５は真空室側のバルブ、１６はその
内部でスパッタリングが実施される真空室を示す。(6) FIG. 5 shows the arrangement of equipment for carrying out the method of the present invention. As in the case of the apparatus shown in FIG. 2, 11 is an argon gas gas box, 12 is an oxygen gas box, 13
14 and 15 are valves on the vacuum chamber side, and 16 is a vacuum chamber in which sputtering is performed.
本発明の方法を実施するためには、バルブ１５と流量計
１３、バルブ１４と流量計１３との間にそれぞれＴ字管
１７．１８を接続し、Ｔ字管１７．１８はそれぞれバル
ブ１９．２０を介してロータリポンプ２１に連結され、
ロータリポンプ２１から矢印Ｅの方向に排気する。通常
の状態ではバルブ１９と２０は開かれていて、バルブ１
５と流量計１３、バルブ１４と流量計１３の間のパイプ
は真空に保たれる。In order to carry out the method of the invention, a T-tube 17,18 is connected between the valve 15 and the flow meter 13, and between the valve 14 and the flow meter 13, and the T-tube 17,18 is connected to the valve 19. connected to the rotary pump 21 via 20;
Exhaust air is discharged from the rotary pump 21 in the direction of arrow E. Under normal conditions, valves 19 and 20 are open, and valve 1
5 and the flowmeter 13, and the pipes between the valve 14 and the flowmeter 13 are kept in vacuum.
スパッタリングをするときは、バルブ１９．２０を閉じ
、先ずバルブ１４を開き、真空室１６にアルゴンガスを
送り、アルゴンガス雰囲気中で純クロムのスパッタリン
グを行い純クロム膜２をガラス基板１上に成長する。When performing sputtering, close the valves 19 and 20, first open the valve 14, send argon gas to the vacuum chamber 16, and sputter pure chromium in the argon gas atmosphere to grow the pure chromium film 2 on the glass substrate 1. do.
次いで酸化クロム膜を成長するには、バルブ（７）
１５を開いて真空室１６に酸素ガスを送り、酸化クロム
を既に形成された純クロム膜上に成長して酸化クロム膜
３を形成する。がくすることによって、徐々に変化する
境界でもって純クロム膜２と酸化クロム膜３が連続して
形成される。Next, in order to grow a chromium oxide film, the valve (7) 15 is opened to send oxygen gas into the vacuum chamber 16, and chromium oxide is grown on the pure chromium film already formed to form the chromium oxide film 3. By peeling, the pure chromium film 2 and the chromium oxide film 3 are continuously formed with gradually changing boundaries.
マスクの１枚ずつの処理においてもバッチ処理において
も、上記の工程を繰り返し実施すればよく、スパッタリ
ングは中断されることなく連続して行うことができる。Whether processing masks one by one or batch processing, the above steps may be repeated, and sputtering can be performed continuously without interruption.
上記の方法で形成したマスクは第３図を参照して説明し
たマスクと同様であって、従来技術において経験された
欠点は認められなかった。The mask formed by the above method was similar to the mask described with reference to FIG. 3 and did not exhibit the drawbacks experienced in the prior art.
（７）発明の効果
以上詳細に説明したように、本発明の方法によるときは
、スパッタリングを中止することなく純クロム膜と酸化
クロム膜の形成が可能となるので、マスク製作の歩留り
が改善されるだけでなく、製作されるマスクの信頼性を
高めるに効果大である。(7) Effects of the Invention As explained in detail above, when using the method of the present invention, it is possible to form a pure chromium film and a chromium oxide film without stopping sputtering, so the yield of mask manufacturing is improved. In addition, it is highly effective in increasing the reliability of the manufactured mask.
（８）
第１図は従来のスパッタリング装置の配置を示す図、第
２図は第１図の装置で形成されるメタルマスクの断面図
、第３図は良好なメタルマスクのパターンの平面図、第
４図は従来技術により作られるマスクパターンの断面図
、第５図は本発明の方法を実施するための連続スパッタ
リング装置の断面図である。
１−ガラス基板、２−純クロム膜、
３−酸化クロム膜、１１−・アルゴンガスガスボックス
、１２−酸素ガスガスボックス、１３・−オートマスフ
ローメータ（流量針）、１４．１５．１９．２０−バル
ブ、１６−・真空室、１７．１８−・Ｔ字管、２１−
ロータリポンプ、（９）
第１ｆ’！Ｑ
第２図
、啼垢洞゛。(8) FIG. 1 is a diagram showing the arrangement of a conventional sputtering device, FIG. 2 is a cross-sectional view of a metal mask formed by the device in FIG. 1, and FIG. 3 is a plan view of a good metal mask pattern. FIG. 4 is a sectional view of a mask pattern made by the conventional technique, and FIG. 5 is a sectional view of a continuous sputtering apparatus for carrying out the method of the present invention. 1-Glass substrate, 2-Pure chromium film, 3-Chromium oxide film, 11-Argon gas box, 12-Oxygen gas box, 13-Auto mass flow meter (flow rate needle), 14.15.19.20-Valve , 16-・Vacuum chamber, 17.18-・T-tube, 21-
Rotary pump, (9) 1st f'! Q Diagram 2, Song Cave.
Claims (1)
イプを通して供給し当該真空室内で純クロムのスパッタ
リングを行なって基板上に純クロム膜を形成し、引続き
前記真空室に流量計と次いでバルブを介しパイプを通し
て酸素を供給することにより酸化クロムを前記純クロム
膜上に付着させるスパッタリング方法において、前記流
量計とバルブとの間のパイプ部分は常時排気して真空に
保ち、スパッタリングを行う際には前記パイプ部分の排
気を止め、真空室に通じる前記バルブを開いてアルゴン
ガスとそれに続く酸素ガスの供給を行なって前記スパッ
タリングを連続的に実施することを特徴とする連続酸化
膜形成方法。Argon gas is supplied to the vacuum chamber through a flow meter and then through a pipe, and pure chromium is sputtered in the vacuum chamber to form a pure chromium film on the substrate. In a sputtering method in which chromium oxide is deposited on the pure chromium film by supplying oxygen through a pipe, the pipe section between the flow meter and the valve is constantly evacuated and kept in a vacuum, and when performing sputtering, A continuous oxide film forming method, characterized in that the sputtering is continuously performed by stopping exhaust gas from the pipe portion, opening the valve leading to the vacuum chamber, and supplying argon gas followed by oxygen gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57100425A JPS58216246A (en) | 1982-06-11 | 1982-06-11 | Continuous formation of oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57100425A JPS58216246A (en) | 1982-06-11 | 1982-06-11 | Continuous formation of oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58216246A true JPS58216246A (en) | 1983-12-15 |
| JPS6228461B2 JPS6228461B2 (en) | 1987-06-20 |
Family
ID=14273605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57100425A Granted JPS58216246A (en) | 1982-06-11 | 1982-06-11 | Continuous formation of oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58216246A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6353260A (en) * | 1986-08-25 | 1988-03-07 | Nippon Telegr & Teleph Corp <Ntt> | Reactive sputtering device |
| JP2002190632A (en) * | 2000-12-20 | 2002-07-05 | Yamaha Corp | Method for forming oxide film and method for fabricating magnetic tunnel junction element |
| JP2015074812A (en) * | 2013-10-10 | 2015-04-20 | 株式会社アルバック | Film deposition apparatus, film deposition method, and manufacturing method of metal oxide thin film |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04145673A (en) * | 1990-10-08 | 1992-05-19 | Nec Corp | Stacked ceramic piezoelectric element |
-
1982
- 1982-06-11 JP JP57100425A patent/JPS58216246A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6353260A (en) * | 1986-08-25 | 1988-03-07 | Nippon Telegr & Teleph Corp <Ntt> | Reactive sputtering device |
| JP2002190632A (en) * | 2000-12-20 | 2002-07-05 | Yamaha Corp | Method for forming oxide film and method for fabricating magnetic tunnel junction element |
| JP2015074812A (en) * | 2013-10-10 | 2015-04-20 | 株式会社アルバック | Film deposition apparatus, film deposition method, and manufacturing method of metal oxide thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6228461B2 (en) | 1987-06-20 |
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