JPS5821389A - Semiconductor laser device and its manufacture - Google Patents

Abstract

PURPOSE:To inject currents easily into a narrow region without forming a groove by diffusing an impurity having a reverse conduction type to an active layer in V-shaped form from one side of a clade layer and making the nose of the impurity reach to the active layer. CONSTITUTION:The semiconductor laser device with double hetero-structure is formed by a GaAs substrate 1, the first clad layer 2, the active layer 3, the second clad layer 4 and an ohmic contact layer 5. In the constitution, the impurity having the reverse conduction type to the layer 3 is diffused from the layer 4 side in V-shaped form, and the nose of the V-shaped diffusion section 13a is made reach to the layer 3. Since a diffusion layer 13 has low resistance in the laser device formed in this manner, the V-shaped diffusion section 13a of the layer 13 is utilized as a current guide, and currents can be injected to the narrow region. Mechanical stress can be prevented approximately because the groove is not formed to the layers 4, 5 at that time. The nose of the diffusion section 13a is not necessarily contacted with the layer 3, and may be positioned near the layer 3.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in an isocurricular ray device with a 1lll reduction and a pinching twist fIl rate.

Among optical over-reliability light sources, semiconductor radar equipment is considered as a light source with a problem of over-reliability.
In the 1 device, the number written in the EA layer in the high current inflow v-4, and the number of current inputs are important.
aL-1 current agca * Fudome & L,? The 6m view, which requires careful skill to install the electric wire IP to the area of the inflow of electricity or the destruction layer, is a current diffusion Φ.
The current confinement i in the low region is reduced by 1its. Since it is possible to efficiently confine the current by considering the structure and structure of the current, it is extremely effective in combating electrical defects in difficult areas.

The diagram shows the schematic configuration of the semiconductor radar device of the slave vehicle, which is equipped with 14 F electric wires. layer (*1 FF7P layer), s is the w-Gain layer (pyromagnetic layer), 4 is the P-Gain layer (second layer), J is the r-Gain layer (t-.

Mitsuta Kontata) layer), - is an N-type impurity diffusion region, r,
# indicates each electrode. In the semiconductor radar device with the diffusion stripe structure shown in No. 1 J7A, #-type layer 1
It has the advantage of having a high confinement effect because the current vM can be confined up to close to In a semiconductor radar device with an r-structure, the current flows through the V-shaped groove, so it is possible to perform a comparative function in which the current flows into the sandwiched region.
14. However, in this structure, the current t, Pv, and V
The character-shaped groove is Makunto 84Fg'￥f)//Eyl
lt - Mechanical stress [Uke is black, this is why Takako special
There were drawbacks such as deterioration and shortened lifespan.

The present invention was made in consideration of the above-mentioned WI, and its ID
Localized areas should not be provided with wires for electric wires (current inflow into the covered area), which may be exposed to mechanical stress (semiconductor material that can cause long-term hemorrhoids). In addition, the present invention and others have a 16% reduction in sales and sales, and the manufacture of semiconductor radar equipment that can extend the lifespan. It is about providing.

First, I will explain the outline of the zero-fired BA.The gist of the present invention is, for the most part, a V-shaped sieve, and instead of a V-shaped diffusion layer with a current of 141, a 5L-type one is applied. In other words, in a semiconductor laser setup where the S and am layers are sandwiched by the Clara r layer, the 7212 layer -1 or hfI
Number the military #I line which becomes the II sex layer and the transparency** in a V-shape,
Also, the first pigeon of the seven expansion layer ID flies once in the first layer, and the first pigeon flies once in one lap of the decimal number 1 and expansion Ik member than the first layer. Mayu, Book 11! On the first layer, the first touch layer, the first layer, the first crystal layer, the first contact layer, and the second crystal layer. l1ill
! Isi; After forming, /1-crystal layer 62 V-shaped fermentation is provided, and then from the surface of the dummy crystal layer upward &! Therefore, according to the present invention, the active layer and the impurities that become the transparent conductor 411 are diffused to a predetermined #1iIs, and then further removed. The diffused layer acts as a current guide, so
Current flow into a narrow area can be easily sensed. In this case, since there is no final constraint in each crystal 6 formed, it is possible to reduce the mechanical stress that is applied to the mount and the inductor.
It has the effect of being able to bring about life. In addition, the tip of the Iki diffusion layer reaches 11111IPi4; the minority carrier diffusion layer from the active layer or the fI4Ik layer.
Since it is only necessary to form, expansion #sister is also comparatively easy. i
Other manufacturing processes also have the advantage of being able to manufacture s*ii4' since no special manufacturing is required.

One below! The 1iW14III pancreatic lining will be explained with reference to Example 62 shown in the drawings.

sl- is a semiconductor radar device O according to an embodiment of the present invention
Figure 4--(0) is a cross-section showing the above-mentioned iiu+t noble work@ in the viI drawing which shows the general structure of II.

Note that the same reference numerals as in FIG. 111 and 42WiA are given to parts thereof, and detailed explanation thereof will be omitted. First, 1Ii
As shown in Figure 4 Country-2 (Gamu$ board 1 621ill9?/PMIJ, shielding Hz, tlA2f9yPil14
m and ohmic contact layer 1v upper kiganko; fist,
Further 4; Ohmic contact layer j upper W N -Ga
Mu1mu Hatake layer (/Mie crystal layer) 11v is formed.

Next 62, -dummy ink layer 11e center m5=
V-shaped tr* (Elk 應) J x t'1Hdcf
t.

Next, on the surface of the dummy crystal layer 11 on which the V-shaped l111 is provided, an impurity V which becomes a conductive type is diffused, and the diffusion layer I J4DV is formed as shown in FIG. 6 so that the tip of the shape extends to the conical layer 1.
Two. This is a method of performing V-shaped diffusion due to the *42 of Kokanganri, and due to the existence of the 111Hz
11 (diffusion is carried out with 4 g of 2 pieces, -'-Ash C;
, 114id (C14: dummy crystal layer J J as shown
If IQ★, the upper part of the ohmic contact layer 5 becomes flat. In other words, the ohmic contact layer 1 and the second coupled layer 4 do not have any curls, and the surface of the element becomes flat. Thereafter, by depositing electrodes 1, - on WJ on the ohmic conductive layer 14D and on the lower part of the N-Ga direct S substrate, a semiconductor radar i device shown in *iiigt- is formed S.

In this way, since the diffusion layer 13 has a low resistance, the V-shaped diffusion of the diffusion layer III is caused by a current! It can be used as an id, and current can be injected into the sandwiched region. In this case, each layer 4, 1L does not have to form a sieve as in the conventional device, so it can be subjected to mechanical stress. Also, top ii! The convex shape of the V-shaped widening part 11a4 can be changed from the shape 62 of the 11th century memy crystal layer thickness 1Φ thickness S and the shape of the memi single layer 114; Therefore, there is an advantage that the region in which the current t' is confined can be varied in the container.

FIG. 5 (-, (is) is a schematic structure of a semiconductor radar device according to another embodiment of this book.
This is the model shown in Fig. 3 and the part ≦; is marked with ``Hakama Jl#'', and detailed explanation thereof will be omitted. This embodiment differs from the previously described embodiment in that the ohmic contact layer 5 and the electrode 1 are connected to each other; # This is what we did to control the situation. In addition, si diagram (
1 indicates the enclosed area of the active layer 1, sbl is the ill area, and s'l is the area of the clad layer 2. Also, . indicates an electron, and 0 indicates a hole.

Even with this configuration, the effect is the same as that of the previous embodiment W@
Of course you should.

Note that the present invention is not limited to each of the above-mentioned IK examples. For example, the V-shaped diffusion of the IK distribution layer 11 is
The tip of a does not necessarily have to be in contact with the active layer 14K) Nearby 1: If there is, *
@m(4)! The tip of the V-shaped expansion InlJm is the active layer 1
This is the case where there is an active layer S that does not reach the point where the hole expands and leaves the hole. In this case, Δnd del is the 6th w/A(il
As shown in c, holes of small enemy carriers scattered from P/My Yank pii due to diffusion 6 are suitably recombined to active layer I and released. The character-shaped diffusion part 1 is carried over to the active layer, and the electron mine huan'er 11111Lt
This is the case where there is an active [7-2] within. In this case, the arm is 7ifi (@42, as shown, 1?/
The electrons of the small enemy carriers diffused from the N-jank V-conductor reach the active layer 3, recombine, and emit light.

In addition, in this case, since the b-holes are absorbed and recombined on the opposite side, the light-emitting region becomes wider than in the case shown in Fig. acts as a light 4m path, confining the light and becoming ttm.In other words, if the impurity diffusion deviates from the predetermined position, even if the impurity diffusion is deviated from the predetermined position, even if there is an active layer, To emit light: JM, and to rotate crops as RED. From this it can be seen that the diffusion layer xxID diffusion control is relatively Sa.

In addition, in the above embodiment, the semiconductor substrate is 01 $ substrate t.
'F@G1Mu5-Gamunodirect-direct-system-Lede-6-2-#i-explained, but of course it can be applied to the Ig*P-I Oga-Musr-system Rede-ku knee.

Furthermore, there are 0 kinds of unjust things that can be spread, sns that can be spread, etc.
Specification 4: The power may be applied as appropriate, and other modifications may be made without departing from the gist of the present invention.

[Brief explanation of drawings]

Figures 1 and 9182 are cross-sections of the conventional semiconductor radar device and schematic configuration -1 S- are -mm of the present invention.
Cross section showing the schematic structure of the example - No. 48 (--- (G) is a cross-section showing the above-mentioned device/sill construction 11v), No. 111 (a) (- is a cross-sectional view showing the schematic structure of other examples, and Schematic diagram showing the band sode kv, s6 figure (a) (@ and 117 i
n! 1(a) and (as) are respectively modified examples [- for explanation. 1...N-G1 board (*conductor board), 2...N
-Gamu JA@layer (1st Tatsutsu PJIil), 1...
N-G1 mover layer (m sister layer), 4-P--mu Im S layer (s3 closed layer), I...PG mover layer (ohmic contact layer), y, a... Electrode, 11...N
-Gamu Jmu Hatagami (dummy crystal layer), 11...V-shaped groove, 11...diffusion layer, ixa...diffusion part, 14...
・Insulating film. Representative Patent Attorney Suzue Takehiko 1 to 1 Figure 2 s3 Figure 1 401 Figure 4 (a) (b) (C)

Claims (1)

[Claims] 1) Chain-like band width/pinching weight layer IP! In the semiconductor radar installation with II control bud width and crowned Clara R layer/f Luhete W Aya structure I11, the tap role-7Th
& Upper ml! ＋ll! 11&&J6 The unholy matter is spread in a rectangular shape, and its tip is spread out from the upper layer or layer to the point where it spreads all over the place. A semiconductor radar device characterized by: (2) On the semiconductor substrate, the first shoes FIG, an additive layer and the second @kratsrNIt - a double head W that is similar to the above application.
II. Forming a knee structure, forming 1 mg of ohmic layer on the third layer 1r, forming a layer of ohmic layer on top of the 1r layer, and forming a meme embroidery layer. The process of forming a V-shape @IIvIIk in the crystal layer The process of diffusing the impurities in the storage layer and the conductive layer 11 & up to the #ls of the electrical disconnection, and then