JPS5821386A - Controller for semiconductor laser - Google Patents

Controller for semiconductor laser

Info

Publication number
JPS5821386A
JPS5821386A JP11971981A JP11971981A JPS5821386A JP S5821386 A JPS5821386 A JP S5821386A JP 11971981 A JP11971981 A JP 11971981A JP 11971981 A JP11971981 A JP 11971981A JP S5821386 A JPS5821386 A JP S5821386A
Authority
JP
Japan
Prior art keywords
output
semiconductor laser
register
monitor
rvb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11971981A
Other languages
Japanese (ja)
Inventor
Shuji Kimura
修治 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11971981A priority Critical patent/JPS5821386A/en
Publication of JPS5821386A publication Critical patent/JPS5821386A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06825Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Abstract

PURPOSE:To grasp the degree of the degradation of the semiconductor laser by controlling a bias level so that monitor output in case of operation and monitor output in case of initial adjustment equalize and displaying the level. CONSTITUTION:When initial adjustment, monitor output Pmo in the case when prescribed output is obtained, bias voltage VBO and the change DELTAVB of vias voltage required for predetermined output change are set to a register R. The semiconductor laser LD is brought to an ON state for a specified period while the value of the register R is set to a register RVB. When the controller reaches a control period, a microprocessor MPU compares value set to a register RPm and monitor output Pm from a light-receiving element M, and sets the approximate value of the output Pm to the RPm. The MPU detects the output Pm through the operation, controls the bias level so that the output Pm and Pmo agree, and addes difference with the VBO to value set to the RVB. When said operation is completed, value set to the RVB is displayed to a display circuit DSP.

Description

【発明の詳細な説明】 本発明は半導体レーザの出力を一定に保ち、かつ半導体
レーザの動作点及び劣化状態t?lK把握することが可
能な半導体レーザ制御装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention maintains the output of a semiconductor laser at a constant level, and determines the operating point and deterioration state t? of the semiconductor laser. The present invention relates to a semiconductor laser control device that can grasp lK.

第1図は半導体レーザの出力特性である。本図において
縦軸Pは光出力、横軸工fは順方向電流。
FIG. 1 shows the output characteristics of a semiconductor laser. In this figure, the vertical axis P is the optical output, and the horizontal axis f is the forward current.

破線は劣化時の特性管示す◎ 半導体レーザは順方向電滝工fがしきい値管越えると急
峻に順方向電流が増加し発光!開始する。
The broken line indicates the characteristic tube when it deteriorates.◎ In a semiconductor laser, when the forward current flow f exceeds the threshold tube, the forward current increases sharply and emits light! Start.

前記しきい値は温度あるいは素子の経時変化により破線
で示すように変動する大め一定の光出力を得るためKは
半導体レーザに流すバイアス電流を変化させなければな
らない〇 その丸め従来、光出力の一部をフィードバックして、こ
れt規準値と比較してバイアス電流管制御する方法がと
られている。しかしながらヒの様な方法では半導体レー
ザの動作点や劣化状態を知ることは不可能であシ、装置
の保守上、不便である。
The threshold value fluctuates as shown by the broken line due to temperature or aging of the element.In order to obtain a relatively constant optical output, K must change the bias current flowing through the semiconductor laser. A method is used in which a portion of the current is fed back and compared with a reference value t to control the bias current tube. However, with the method described above, it is impossible to know the operating point and deterioration state of the semiconductor laser, and it is inconvenient in terms of maintenance of the device.

本発明は上記の問題点上解消し、半導体レーザの出力音
一定に保ち、かつその劣化状態を表示可能な半導体レー
ザ制御装置tII供することを目的とし、半導体レーザ
の出力管モニタするモニタ囲路、初期調整時において規
定の出力を得た時のモニタ出力、該半導体レーザのバイ
アスレベル、単位出力変化Kl!するバイアス変化量上
記憶する記憶回路、該半導体レーザ【一定期間オン状態
にしモニタ出力と該記憶回路に記憶されているモニタ出
力管比較し両者が一致するようにバイアスレベルの制御
を行なう制御回路、制御後のバイアスレベルを表示する
表示回路より成ること’to黴とするものである。
The present invention solves the above-mentioned problems, and aims to provide a semiconductor laser control device tII that can maintain a constant output sound of a semiconductor laser and display its deterioration state, and includes: a monitor circuit for monitoring an output tube of a semiconductor laser; The monitor output when the specified output is obtained during initial adjustment, the bias level of the semiconductor laser, and the unit output change Kl! a memory circuit that stores the amount of change in the bias to be generated; It consists of a display circuit that displays the bias level after control.

以下間管用いて本発明の詳細な説明する〇第2図は初期
調整時の出力特性、第3図は本発明の一実施例である。
The present invention will be explained in detail below with reference to FIG. 2. FIG. 2 shows the output characteristics at the time of initial adjustment, and FIG. 3 shows an embodiment of the present invention.

第2.3図においてPmはモニタ出力PmO,VB□は
それぞれ規定の出力を得た時のモニタ出力、バイアス電
圧、ΔvBは一定出力変化に要するバイアス電圧の変化
lMPUはマ1クロプロセッサ、OMPq比較器D8F
は表示回路* D/AS 、 D/A@はD/A変換器
、LADは半導体レーザ、Mは受光素子、RvB、RP
m、Rはレジスタであり、RVB、RPmはバイアス設
定用。
In Figure 2.3, Pm is the monitor output PmO, VB□ is the monitor output when the specified output is obtained, bias voltage, ΔvB is the change in bias voltage required for a constant output change, lMPU is the microprocessor, and OMPq comparison. Vessel D8F
is a display circuit* D/AS, D/A@ is a D/A converter, LAD is a semiconductor laser, M is a light receiving element, RvB, RP
m and R are registers, and RVB and RPm are for bias setting.

出力モニタ用、Rは初期調整時のデータ記憶用に使用さ
れる。
R is used for output monitoring, and R is used for data storage during initial adjustment.

本発明は初期調整時、例えば装置の出荷時に得九基準デ
ータ管もとに出力の安定化をはかるものである。従って
初期調整時に第2図の様な出力特性が得られたとすると
、規定の出力を得た時の七二タ出力Pmo、vBo一定
出力変化に要するバイアス電圧の変化ΔvBがレジスタ
RK設定される。
The present invention aims to stabilize the output based on nine reference data tubes obtained at the time of initial adjustment, for example, at the time of shipping the device. Therefore, assuming that the output characteristics as shown in FIG. 2 are obtained at the time of initial adjustment, the change in bias voltage ΔvB required for a constant output change in the 72-taper output Pmo and vBo when a specified output is obtained is set in the register RK.

バイブスレベルの制御は、一定の期間半導体V−ザt−
ON状態にして制御を行なう・例えばレーザプリンタの
場合には紙送りの期間等に行なう。
The vibration level is controlled by semiconductor V-the-T- for a certain period of time.
Control is performed by turning it on. For example, in the case of a laser printer, this is done during the paper feeding period.

すなわち装置の電#oNw#にはレジスタRに記憶され
ているVBOがレジスタRVB  Kセットされる。制
御期間になるとマづクロプロセラ?MPυはレジスタR
Pm t−以下の様に操作して半導体レーザLDの出力
管モニタする。
That is, VBO stored in register R is set to register RVBK in device power #oNw#. When it comes to the control period, is it Magukuro Procera? MPυ is register R
Pm t- Monitor the output tube of the semiconductor laser LD by operating as follows.

まずマ1クロプロセッサMPυはレジスタRPmの最上
位ビット(M2R)lolilcする。レジスタRPm
にセットされた値はD/A変換器D/り。
First, the microprocessor MPυ lolilcs the most significant bit (M2R) of register RPm. Register RPm
The value set to D/A converter D/A.

によQD/A変換され比較器oMPにおいて受光素子M
からのモニタ出力Pmと比較される。マ1クロプロセッ
サMPUは比較器OMFの出力t−試み取り、レジスタ
RPmの値(P mである時は、レジスタRI’m(0
M8BIO1iにし九ママ次の桁IOHにし、レジスタ
RPmの値) P mである時はMSBIOFFにして
次の桁’IONとする0この操作管下位のビットに向か
って、順次繰り返す□ことKより、モ二り出力Pmの近
似値がレジスタRPmにセットされるととKなる〇 上記の動作によυマイクロプロセッサMPUqモニタ出
力Pm知り、基準出力PmOとの差を求める。その差が
例えば5×ΔvBであれば現在レジスタRVBにセット
されている値に5×ΔV13を加えた値をセットし、P
mとPmoの差が小さければΔVBt−加えた値をレジ
スタRVBにセットし、再びモニタを行なう。この動作
t−P mとpmoがほぼ一致する壕で1例えばグlP
m−Pm0l矛〈ΔPm  (ΔPm許容誤差)になる
まで繰り返す。
QD/A converted by
It is compared with the monitor output Pm from . The microprocessor MPU takes the output t of the comparator OMF and sets the value of the register RPm (Pm) to the register RI'm(0).
Set M8BIO1i to the next digit IOH, and set the value of register RPm) P m, turn MSBI OFF and turn the next digit 'ION' 0 Repeat sequentially toward the lower bits of this operation tube When the approximate value of the output Pm is set in the register RPm, it becomes K. By the above operation, υ microprocessor MPUq knows the monitor output Pm and finds the difference from the reference output PmO. If the difference is, for example, 5×ΔvB, set the value that is currently set in register RVB plus 5×ΔV13, and set P
If the difference between m and Pmo is small, the value added by ΔVBt is set in register RVB and monitoring is performed again. For example, in a trench where t-Pm and pmo are almost the same,
Repeat until m-Pm0l <ΔPm (ΔPm tolerance).

上記操作が終了した時点でレジスタRVBにセットされ
ている値が表示回路DBPIC表示され、切起調整時か
らのバイアス電圧の変化、すなわち半導体レーザの劣化
の度合を知ることができ、半導体レーザの寿命に達する
前に素子の交換環の保守を行なうことが可能となり、装
置のトラブル管未然に防ぐことができる0 なお本実施例では、動作時のバイアス電圧VBのみ會表
示したが、初期調整時のバイアス電圧vnoも同時に表
示してもよい□を九初−整時のバイアス電圧vBoと動
作時のバイアス電圧の差をマイクロプロセッサMPUで
求め、その差が一定値以上罠なったら警告灯を点灯する
ようにしてもよい◎ 以上説明したように本発明によれば半導体レーザの出力
t?lK一定に保ち、かつ半導体レーザの状態’tNK
把握できるので半導体レーザの組み込まれる装置のトラ
ブル!未然に防止するヒとが可能となり、装置の保守に
非常に有効である。
When the above operation is completed, the value set in the register RVB is displayed on the display circuit DBPIC, and it is possible to know the change in bias voltage since the time of cut-off adjustment, that is, the degree of deterioration of the semiconductor laser, and the life span of the semiconductor laser. It is possible to perform maintenance on the replacement ring of the element before reaching the voltage VB, which prevents equipment trouble.In this example, only the bias voltage VB during operation is shown, but the bias voltage VB at the time of initial adjustment is The bias voltage vno may also be displayed at the same time.The difference between the bias voltage vBo during adjustment and the bias voltage during operation is determined by the microprocessor MPU, and if the difference exceeds a certain value, a warning light is turned on. ◎ As explained above, according to the present invention, the output t? of the semiconductor laser may be Keep lK constant and keep the semiconductor laser state 'tNK
Troubles with equipment in which semiconductor lasers are installed can be detected! This makes it possible to prevent accidents from occurring, which is very effective for equipment maintenance.

【図面の簡単な説明】[Brief explanation of the drawing]

fgx図は半導体レーザの出力特性、第2図は初期調整
時の出力特性、第3図は本発明の一実施例である。 Pm・・・モニタ出力、Pmo、VB□・・・初期調整
時□に規定の出力聖書た時のモニタ出力、バイアス電圧
、ΔvBは一定出力変化に要するバイアス電圧の変化、
MPUはマイクロプロセッサ、OMPFi比較器、DS
Fは表示回路、D/ム8.D/ム。 ・・・D/A変換器、LD・・・半導体レーザ、M・・
・受光素子、RVB、RPm、R・・・レジスタゴ51
;・ イ 1や忙l 簿z8
The fgx diagram shows the output characteristics of the semiconductor laser, FIG. 2 shows the output characteristics at the time of initial adjustment, and FIG. 3 shows an embodiment of the present invention. Pm...Monitor output, Pmo, VB□...Monitor output when the specified output is set to □ during initial adjustment, bias voltage, ΔvB is the change in bias voltage required for a constant output change,
MPU is a microprocessor, OMPFi comparator, DS
F is a display circuit, D/mu8. D/Mu. ...D/A converter, LD...semiconductor laser, M...
・Photodetector, RVB, RPm, R...Register Go 51
;・ I 1 and busy l book z8

Claims (1)

【特許請求の範囲】 半導体レーザの出力管モニタするモニタ回路。 初期調整時において規定の出力を得た時のモ二り出力、
該半導体レーザのバイアスレベル、単位出力変化に要す
るバイアス変化量を記憶する記憶回路、該半導体レーザ
を一定期間オン状態にしモニタ出力と該記憶回路に記憶
されているモニタ出力を比較し両者が一致するようにバ
イアスレベルの制御を行なう制御囲路、少なくとも制御
後のバイアスレベル管表示する表示囲路より成ること!
特徴とする半導体レーザ制御装置〇
[Claims] A monitor circuit that monitors an output tube of a semiconductor laser. Monitoring output when the specified output is obtained during initial adjustment,
A memory circuit that stores the bias level of the semiconductor laser and the amount of bias change required for a unit output change; the semiconductor laser is kept on for a certain period of time, and a monitor output stored in the memory circuit is compared with the monitor output, and the two match. It should consist of a control circuit for controlling the bias level, and at least a display circuit for displaying the bias level after control!
Featured semiconductor laser control device〇
JP11971981A 1981-07-30 1981-07-30 Controller for semiconductor laser Pending JPS5821386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11971981A JPS5821386A (en) 1981-07-30 1981-07-30 Controller for semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11971981A JPS5821386A (en) 1981-07-30 1981-07-30 Controller for semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5821386A true JPS5821386A (en) 1983-02-08

Family

ID=14768417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11971981A Pending JPS5821386A (en) 1981-07-30 1981-07-30 Controller for semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5821386A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225482A (en) * 1985-07-25 1987-02-03 Olympus Optical Co Ltd Driving device of semiconductor laser
JPS62130578A (en) * 1985-12-03 1987-06-12 Ricoh Co Ltd Semiconductor laser driving circuit
JPS62130579A (en) * 1985-12-03 1987-06-12 Ricoh Co Ltd Semiconductor laser driving circuit
JPH01302788A (en) * 1987-04-13 1989-12-06 Sharp Corp Semiconductor laser driving system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225482A (en) * 1985-07-25 1987-02-03 Olympus Optical Co Ltd Driving device of semiconductor laser
JPS62130578A (en) * 1985-12-03 1987-06-12 Ricoh Co Ltd Semiconductor laser driving circuit
JPS62130579A (en) * 1985-12-03 1987-06-12 Ricoh Co Ltd Semiconductor laser driving circuit
JPH01302788A (en) * 1987-04-13 1989-12-06 Sharp Corp Semiconductor laser driving system

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