JPS58212004A - Semiconductive composition - Google Patents

Semiconductive composition

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Publication number
JPS58212004A
JPS58212004A JP9370282A JP9370282A JPS58212004A JP S58212004 A JPS58212004 A JP S58212004A JP 9370282 A JP9370282 A JP 9370282A JP 9370282 A JP9370282 A JP 9370282A JP S58212004 A JPS58212004 A JP S58212004A
Authority
JP
Japan
Prior art keywords
composition
layer
parts
semiconductive
semiconductive composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9370282A
Other languages
Japanese (ja)
Inventor
柳生 秀樹
育雄 関
高月 英男
利吉 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP9370282A priority Critical patent/JPS58212004A/en
Publication of JPS58212004A publication Critical patent/JPS58212004A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Conductive Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は電気機器類例えばゴム・プラスチック絶縁電カ
ケープルの外部半導電層などに用いられ、絶縁被覆層と
の剥離性に優れた半導電性組成物に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductive composition that is used as an external semiconductive layer of electrical equipment such as rubber/plastic insulated capacitors and has excellent peelability from an insulating coating layer.

最近、例えばポリエチレンまたは架橋ポリエチレン絶縁
型カケープルにおける絶縁層の上に押出被櫟された外部
半導電層に対し、ケーブルの接続作業を容易にするため
、剥離性が優れていることが強く1要望されるようにな
った。
Recently, there has been a strong demand for an external semiconducting layer extruded on top of the insulating layer, for example in polyethylene or cross-linked polyethylene insulated cables, to have excellent peelability in order to facilitate cable connection work. It became so.

この剥離性に優れた外部半導電層として、従来、エチレ
ン・酢酸ビニル−塩化ビニルクラフトポリ−1、あるい
は塩素化ポリエチレ7を主体とする組成物が用いられて
いる。しかし、これら塩素を含むポリマは耐熱性に劣る
ため、架橋ポリエチレン絶縁層の加熱架橋時に熱分解し
て塩化水素ガスを発生[、これが遮蔽用銅テープを腐蝕
したり、絶Misの市気特性を低下させるという問題が
あった。
Conventionally, a composition mainly composed of ethylene/vinyl acetate/vinyl chloride kraft poly-1 or chlorinated polyethylene 7 has been used as the external semiconductive layer having excellent releasability. However, since these chlorine-containing polymers have poor heat resistance, they thermally decompose and generate hydrogen chloride gas during heating and cross-linking of the cross-linked polyethylene insulation layer [this may corrode the shielding copper tape or reduce the commercial characteristics of There was a problem of lowering the

特に生産性向りのため架橋ポリエチレン絶縁層の加熱τ
品度を高くするという操作が必安になっており、t+i
lえば220℃を越える場合には熱分解が徹しく、従来
の塩素を含むポリマから成る外部半導電層の実用は雌し
かった。
Heating τ of cross-linked polyethylene insulation layer especially for productivity
The operation of increasing the quality has become a necessity, and t+i
For example, if the temperature exceeds 220° C., thermal decomposition is severe, and conventional outer semiconducting layers made of polymers containing chlorine cannot be put to practical use.

+発明は前記した従来技術の欠点を解消したもので、耐
熱性に優れ、しかも剥離性に優れた半導電性組成物に関
するものである。
The + invention eliminates the drawbacks of the prior art described above and relates to a semiconductive composition that has excellent heat resistance and peelability.

すなわち、本発明の振旨は、テトラフルオロエチレ/−
プロピレン系共重合体100重量部に対し、4% 市(
/lカーボンブランクを30〜150重量部混和し−C
構成した半導電性組成物にある。
That is, the gist of the present invention is that tetrafluoroethylene/-
For 100 parts by weight of propylene copolymer, 4% (
/l carbon blank is mixed with 30 to 150 parts by weight -C
The composition is a semiconductive composition.

本発明におけるテトラフルオロエチレン−プロビレ/糸
共重合体としては、主成分のテトラフルオロエチレンと
プロピレンに加えて、これらと共重合可能な成分、例え
ばエチレン、インブチレン、アクリル酸およびそのアル
キルエステル、メタクリル酸およびそのアルキルエステ
ル、フン化ビニル、フッ化ビニリチン、ヘキサフルオロ
プロペ/、クロロエチルビニルエーテル、クロロトリフ
ルオ、ロエチレン、パーフルオロアルキルビニルエーテ
ル等を適当に含有せしめたものであってもよい、−1か
かる共重合体において、テトラフルオロエルシン/プロ
ピレンの含有モル比としては9515〜30/70、特
に90/10〜45155の範囲から選定することが、
耐熱性、成形性等の面から好ましく、また、適宜加えら
れる主成分以外の成分の含有量としては通常50モルチ
以下、特に30モルチ以下の範囲から選定することが好
ましい。
The tetrafluoroethylene-propylene/thread copolymer in the present invention includes, in addition to the main components tetrafluoroethylene and propylene, components copolymerizable with these, such as ethylene, imbutylene, acrylic acid and its alkyl esters, methacrylate, etc. -1 Such compounds may contain acids and their alkyl esters, vinyl fluoride, vinylitin fluoride, hexafluoroproprene, chloroethyl vinyl ether, chlorotrifluoro, loethylene, perfluoroalkyl vinyl ether, etc. In the polymer, the content molar ratio of tetrafluoroersin/propylene is selected from the range of 9515 to 30/70, particularly 90/10 to 45155.
It is preferable from the viewpoint of heat resistance, moldability, etc., and the content of components other than the main component, which may be added as appropriate, is usually selected from a range of 50 molti or less, particularly 30 molti or less.

また、このテトラフルオロエチレン−プロピレン糸井重
合体に対し、塩素系ポリマよりも耐熱性+7)優しタ、
l−’!Jエチレン、エチレンプロピレノゴムなどのエ
チレン系ポリマをプレイドすることも可能である。
In addition, this tetrafluoroethylene-propylene Itoi polymer has higher heat resistance than chlorine-based polymers, +7) gentleness, and
l-'! It is also possible to plaid ethylene polymers such as J ethylene and ethylene propylene rubber.

41M、性力−ボンブランクの配合量を規定した理由は
、30重ν部に満た′なければ電気機器類の半As ’
di tL JtA料として要求される導電性が得られ
ない/こめてあり、甘た150重量部を越えると機械強
度、押出加り性が著しく低下するからである。
41M, Strength - The reason for specifying the blending amount of the bomb blank is that if it is less than 30 parts, it is half As' for electrical equipment.
This is because the electrical conductivity required as a di tL JtA material cannot be obtained/it is difficult to obtain, and if the amount exceeds 150 parts by weight, the mechanical strength and extrusion property are significantly reduced.

この組成物の調整は常法により混練しておこなうことが
できるが、この時必要に応じてジクミル・・−4キサイ
ドなどの架橋剤、金属石けんなどのυII 1’、 I
IJJ削、タルクなどの充てん剤を加えることも可能で
ある。
This composition can be prepared by kneading it in a conventional manner, but at this time, if necessary, a crosslinking agent such as dicumyl...-4oxide, υII 1', I such as metal soap, etc.
It is also possible to add fillers such as IJJ scraping and talc.

を発明の組成物は種々の形態で電力機器類の半専電1曽
形成材料として適用できる。例えば本発明の組成物を、
架橋ポリエチレン絶縁層形成材料と共に同時押出しをお
こない、電カケープルの外部半導電層 てy2 造される市カケープルは、この外部半導電層か
満当な剥離性を備えており、更に耐熱性が極めて潰t1
ているために、架橋化処理時の高熱によっても堝素糸ポ
リマのように腐食性ガスを発生することもなく、長期に
わたり安定したケーブル性能を保持することができる。
The composition of the invention can be applied as a semi-electronic forming material for power equipment in various forms. For example, the composition of the present invention,
The outer semiconductive layer of the electric cable is co-extruded with the crosslinked polyethylene insulation layer forming material.The outer semiconductive layer of the electric cable has adequate releasability and is extremely heat resistant. t1
Because of this, it does not generate corrosive gases even when subjected to high heat during the crosslinking process, unlike the case with the yarn polymer, and can maintain stable cable performance over a long period of time.

次に、本発明の実施例を比較例と共に説明する。Next, examples of the present invention will be described together with comparative examples.

実施例1〜3および比較例1〜3 表1に示す組成物を、外部半導電層形成のために、架橋
性ポリエチレンから成る絶縁層影成組底物と共に導体周
上に同時押出しした後、架橋化処理せしめて架橋ポリエ
チレン絶縁電カケープルを製造した。
Examples 1 to 3 and Comparative Examples 1 to 3 After coextruding the compositions shown in Table 1 onto the conductor periphery together with an insulating layer-containing composite bottom made of crosslinkable polyethylene to form an external semiconductive layer, A crosslinked polyethylene insulated capeple was produced by crosslinking treatment.

(表中の各成分の配合蓋は1景部表示である)。(The compounding lid for each component in the table is for one scene).

この場合、架橋化はガス媒体を柑い、230℃、10分
でおこなった。また、導体径は20−1絶縁層の厚さは
6■、外部半4電層の厚さは0.51である。
In this case, crosslinking was carried out at 230° C. for 10 minutes in a gaseous medium. The diameter of the conductor is 20-1, the thickness of the insulating layer is 6 cm, and the thickness of the outer semi-conductor layer is 0.51 cm.

各側の特性測定結果も同じく表1に示す。Table 1 also shows the characteristic measurement results for each side.

本発明による実施例1〜3では、遮蔽用の銅テープの変
色もなく、剥離強度も適当で、4を性も十分である。こ
れに対し、比較例1のようにアセチレンプラックの配合
量が限定値より少なければ24%L性は不十分である。
In Examples 1 to 3 according to the present invention, there was no discoloration of the copper tape for shielding, the peel strength was appropriate, and the properties of 4 were sufficient. On the other hand, if the amount of acetylene plaque blended is less than the limit value as in Comparative Example 1, the 24% L property is insufficient.

また、従来の組成である比較例2.3はここで適用した
厳しい架橋条件では銅テープの変色が認められた。
Furthermore, in Comparative Example 2.3, which has a conventional composition, discoloration of the copper tape was observed under the severe crosslinking conditions applied here.

Claims (1)

【特許請求の範囲】[Claims] (1)  テトラフルオロエチレン−プロピレン系共重
合体100重量部に対し、導電性カーボンブランクを3
0〜150重量部混和して構成したことを特徴とする半
導電性組成物。
(1) 3 parts by weight of conductive carbon blank per 100 parts by weight of tetrafluoroethylene-propylene copolymer.
1. A semiconductive composition comprising 0 to 150 parts by weight of the composition.
JP9370282A 1982-06-01 1982-06-01 Semiconductive composition Pending JPS58212004A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9370282A JPS58212004A (en) 1982-06-01 1982-06-01 Semiconductive composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9370282A JPS58212004A (en) 1982-06-01 1982-06-01 Semiconductive composition

Publications (1)

Publication Number Publication Date
JPS58212004A true JPS58212004A (en) 1983-12-09

Family

ID=14089730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9370282A Pending JPS58212004A (en) 1982-06-01 1982-06-01 Semiconductive composition

Country Status (1)

Country Link
JP (1) JPS58212004A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431852A (en) * 1987-07-28 1989-02-02 Mitsubishi Cable Ind Ltd Flame-retardant fluorine polymer composition
JPS6456866U (en) * 1987-09-30 1989-04-10
JP2004514757A (en) * 2000-11-20 2004-05-20 スリーエム イノベイティブ プロパティズ カンパニー Conductive fluoropolymer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4990340A (en) * 1972-12-29 1974-08-29
JPS538648A (en) * 1976-07-13 1978-01-26 Asahi Glass Co Ltd Fluorine-containing elastomer composition having good moldability

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4990340A (en) * 1972-12-29 1974-08-29
JPS538648A (en) * 1976-07-13 1978-01-26 Asahi Glass Co Ltd Fluorine-containing elastomer composition having good moldability

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431852A (en) * 1987-07-28 1989-02-02 Mitsubishi Cable Ind Ltd Flame-retardant fluorine polymer composition
JPS6456866U (en) * 1987-09-30 1989-04-10
JP2004514757A (en) * 2000-11-20 2004-05-20 スリーエム イノベイティブ プロパティズ カンパニー Conductive fluoropolymer

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