JPS58210652A - Resistance adjustment of thick film hybrid integrated circuit - Google Patents
Resistance adjustment of thick film hybrid integrated circuitInfo
- Publication number
- JPS58210652A JPS58210652A JP57093090A JP9309082A JPS58210652A JP S58210652 A JPS58210652 A JP S58210652A JP 57093090 A JP57093090 A JP 57093090A JP 9309082 A JP9309082 A JP 9309082A JP S58210652 A JPS58210652 A JP S58210652A
- Authority
- JP
- Japan
- Prior art keywords
- slit
- resistance value
- thick film
- laser beam
- fine adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は厚膜混成集積回路の抵抗調整方法に係り、特に
抵抗素子のレーザビームによるトリミング方法に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for adjusting the resistance of a thick film hybrid integrated circuit, and more particularly to a method for trimming a resistive element using a laser beam.
厚膜混成集積回路に用いられる抵抗素子はセラミック基
板上に印刷される回路パターンの導体間に酸化ルテニウ
ム等からなる厚膜抵抗膜を印刷するものであシ、また抵
抗素子として低抵抗値が要求される場合には上記回路パ
ターンの導体そのものが利用される場合がある。Resistance elements used in thick film hybrid integrated circuits are those in which a thick film resistance film made of ruthenium oxide or the like is printed between the conductors of a circuit pattern printed on a ceramic substrate, and a low resistance value is required for the resistance element. In some cases, the conductor itself of the circuit pattern may be used.
前記抵抗素子を所定の精度で所望の抵抗値に加工するの
にレーザビームによるトリミング方法が利用されている
。A trimming method using a laser beam is used to process the resistive element to a desired resistance value with a predetermined precision.
従来のこの種レーザビームによるトリミング方法を第1
図により説明する。The conventional trimming method using this type of laser beam is the first method.
This will be explained using figures.
1はセラミック基板上に印刷された長方形状の厚膜抵抗
体であシ、その長手方向両端は前記セラミック基板上に
印刷された回路パターン導体2゜2′に一部されている
。厚膜抵抗体1はレーザビームの照射によシL字状スリ
ット3.4が削シ取られ右。即ち、厚膜抵抗体1の巾方
向のスリット3は粗調整のためのものであシ、長手方向
のスリット4は微調整のためのものである。このレーザ
ビーム照射による抵抗調整方法は厚膜抵抗体1の一部を
溶融蒸発させて調整を行う方法のため、抵抗体の一部が
集中的に加熱され、削シ取られたスリットの周辺にクラ
ックが発生し、これが経時変化の一つの要因にもなって
いる。またレーザビームによって抵抗体をトリミングす
る速度が早いため、高精度の抵抗値を得ることが困難で
あった。Reference numeral 1 denotes a rectangular thick film resistor printed on a ceramic substrate, and both longitudinal ends of the resistor 1 are partially covered by circuit pattern conductors 2° 2' printed on the ceramic substrate. The L-shaped slits 3.4 of the thick film resistor 1 are removed by laser beam irradiation. That is, the slit 3 in the width direction of the thick film resistor 1 is for coarse adjustment, and the slit 4 in the longitudinal direction is for fine adjustment. This resistance adjustment method by laser beam irradiation is a method of adjusting by melting and vaporizing a part of the thick film resistor 1, so a part of the resistor is heated intensively and the area around the cut slit is heated. Cracks occur, and this is one of the causes of deterioration over time. Furthermore, since the speed at which the resistor is trimmed by the laser beam is fast, it is difficult to obtain a highly accurate resistance value.
本発明の目的は上記問題点を解決し、経時変化の少ない
高精度の抵抗値を作業能率を下げることなく得ることが
出来る、厚膜混成集積回路の抵抗素子のレーザトリミン
グ方法を提供するにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a method for laser trimming a resistor element of a thick film hybrid integrated circuit, which can obtain a highly accurate resistance value with little change over time without reducing work efficiency. .
本発明の一実施例を第2図により説明する。第1図に対
応して、1はセラミック基板上に印刷された厚膜抵抗体
であり、2.2’は同様にセラミック基板上に印刷され
た回路パターン導体の一部を示す。3は厚膜抵抗体1を
レーザビームの照射によって削夛取られたスリットであ
る。このスリット3は前述のように所望抵抗値に対して
の粗調整用であり、スリット3の長さは所望抵抗値よシ
抵抗値が多少小さい値になる様に決められる。厚膜抵抗
上の複数個の断続したスリット4′は抵抗値微調整用の
ものであシ、これもレーザビームの照射によって加工さ
れる。加工されるスリットの数は抵抗体が所望抵抗値に
なるまで継続され、その調整は微細に行われる。またス
リット間の間隔は、あまシ狭いとスリット間の電流密度
が大となシ、これによって厚膜抵抗体が局部的にカロ熱
されるという不具合が生ずるためスリット間の間隔は適
度に取ることが望ましい。スリット4′の長さはレーザ
ビームの照射時間を順次短くし本実施例のように順次短
いスリットヲ加工し抵抗値精度を得易くしても良く、同
一微細長さのスリットの断続としても良いことはもちろ
んである。An embodiment of the present invention will be described with reference to FIG. Corresponding to FIG. 1, 1 is a thick film resistor printed on a ceramic substrate, and 2.2' is a part of a circuit pattern conductor also printed on a ceramic substrate. Reference numeral 3 denotes a slit which is removed by irradiating the thick film resistor 1 with a laser beam. As described above, this slit 3 is used for coarse adjustment of the desired resistance value, and the length of the slit 3 is determined so that the resistance value is somewhat smaller than the desired resistance value. A plurality of intermittent slits 4' on the thick film resistor are for fine adjustment of the resistance value, and these are also processed by laser beam irradiation. The number of slits to be machined is continued until the resistor reaches a desired resistance value, and the adjustment is finely performed. Also, if the spacing between the slits is too narrow, the current density between the slits will be high, which will cause the problem that the thick film resistor will be locally heated, so the spacing between the slits must be set appropriately. desirable. The length of the slit 4' may be determined by sequentially shortening the irradiation time of the laser beam to make it easier to obtain resistance accuracy by processing shorter slits as in this embodiment, or by intermittent slits of the same minute length. Of course.
更に本発明では、抵抗値微調整用スリットを断続的にし
たことによる作業性の低下を、スリット3とスリット4
′とが成す角5を鈍角にすることにより補っている。即
ち、厚膜抵抗体1の主電流通路部6の巾を順次狭くする
ことによシ抵抗の変化率を大きくすることよりスリット
4′の全体の長さを短くすることにより作業性を向上さ
せることが出来る。Furthermore, in the present invention, the decrease in work efficiency due to the intermittent use of the slits for fine adjustment of the resistance value can be avoided by using slits 3 and 4.
This is compensated for by making the angle 5 formed by the angle 5 obtuse. That is, by sequentially narrowing the width of the main current path portion 6 of the thick film resistor 1, the rate of change in resistance is increased, and the overall length of the slit 4' is shortened, thereby improving workability. I can do it.
以上のように、本発明によれば、抵抗体に照射するレー
ザビームを断続的とするため従来に比し過度な熱的県中
を受けることが少く、それによるスリット周辺に生ずる
クラックも少くなり、経時変化の少ない安定した抵抗値
を得ることが出来る。As described above, according to the present invention, since the laser beam irradiated to the resistor is intermittent, it is less exposed to excessive thermal radiation than in the past, and the cracks that occur around the slit are also reduced. , it is possible to obtain a stable resistance value with little change over time.
また、レーザビームの断続照射周期を変化させて、最終
的には、極く短いスリットをあけながら抵抗値を調整す
るため、高精度の抵抗値を得ることが出来る。さらに、
粗調整用スリットと微調整用スリットとの角を鈍角とす
ることにより、作業性の良好な厚膜集積回路のレーザビ
ームトリミング方法が得られる。Furthermore, since the intermittent irradiation period of the laser beam is changed and the resistance value is finally adjusted while opening extremely short slits, a highly accurate resistance value can be obtained. moreover,
By making the angle between the coarse adjustment slit and the fine adjustment slit obtuse, a laser beam trimming method for thick film integrated circuits with good workability can be obtained.
第1図は従来のレーザトリミング法を示す図、第2図は
本発明よりなるレーザトリミング法を示す図である。
1・・・厚膜抵抗体、2.2’・・・回路パターン導体
、$1 目
/
茅2目FIG. 1 is a diagram showing a conventional laser trimming method, and FIG. 2 is a diagram showing a laser trimming method according to the present invention. 1...Thick film resistor, 2.2'...Circuit pattern conductor, $1/Kaya 2
Claims (1)
抗膜を、その巾方向にレーザビームの照射によりスリッ
トを加工することにより抵抗値の粗調整を行う工程と、
その長手方向にスリットを加工することにより抵抗値の
微調整を行う工程よシなるものにおいて、上記抵抗値の
微調整の工程がレーザビーム照射の工程が断続的に行わ
れ、粗調整のスリットと微調整のスリットとの成す角が
鈍角であることを特徴とする厚膜混成集積回路の抵抗調
整方法。L. Roughly adjusting the resistance value by processing a slit in the width direction of the thick film resistive film preprinted on the substrate of the thick film hybrid integrated circuit by irradiating it with a laser beam;
In the process of finely adjusting the resistance value by machining slits in the longitudinal direction, the process of finely adjusting the resistance value is performed intermittently with the process of laser beam irradiation, and the slits for coarse adjustment are performed intermittently. A method for adjusting the resistance of a thick film hybrid integrated circuit, characterized in that the angle formed by the fine adjustment slit is an obtuse angle.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57093090A JPS58210652A (en) | 1982-06-02 | 1982-06-02 | Resistance adjustment of thick film hybrid integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57093090A JPS58210652A (en) | 1982-06-02 | 1982-06-02 | Resistance adjustment of thick film hybrid integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58210652A true JPS58210652A (en) | 1983-12-07 |
JPH0221670B2 JPH0221670B2 (en) | 1990-05-15 |
Family
ID=14072819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57093090A Granted JPS58210652A (en) | 1982-06-02 | 1982-06-02 | Resistance adjustment of thick film hybrid integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58210652A (en) |
-
1982
- 1982-06-02 JP JP57093090A patent/JPS58210652A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0221670B2 (en) | 1990-05-15 |
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