JPS58209168A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS58209168A JPS58209168A JP57091332A JP9133282A JPS58209168A JP S58209168 A JPS58209168 A JP S58209168A JP 57091332 A JP57091332 A JP 57091332A JP 9133282 A JP9133282 A JP 9133282A JP S58209168 A JPS58209168 A JP S58209168A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- type
- junction
- battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 55
- 239000013078 crystal Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 241000218645 Cedrus Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001538234 Nala Species 0.000 description 1
- 241001098054 Pollachius pollachius Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000000936 intestine Anatomy 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 ード形太陽電池に関するものである。[Detailed description of the invention] The present invention relates to a board-type solar cell.
太＠電池を最も高効単にする構造として、従来、第１図
に刈くずように、同一基板上に２つの太陽電池ヲ檀階し
たモノリシックカスフード形太陽電池が提案されている
。８ｌ４／図において、／は基板単結晶、λは） ｈ
’ｔｌｔ池層であるｐｎ接合電池、３はｎＬｐ＋接合に
よるトン早ル接合層、ダは上部電池層であるｐｎ接合電
池、Ｓは窓層でシリ、各層ｌ〜ｊをこの順序で積層し、
更に窓ＩＩＩ Ｓ上に上部電ＭＩＡ６を配置し、基板／
の）面に下部電極７を配電する９。As the most efficient structure for thick batteries, a monolithic cass hood type solar cell has been proposed in which two solar cells are mounted on the same substrate, as shown in Fig. 1. 8l4/In the figure, / is the substrate single crystal, λ is)h
'tlt is a pn junction battery which is a cell layer, 3 is a fast junction layer by nLp+ junction, da is a pn junction battery which is an upper battery layer, S is a window layer, each layer l to j is laminated in this order,
Furthermore, place the upper electric MIA6 on the window IIIS, and connect the board/
9 for distributing power to the lower electrode 7 on the surface).
ここで、上部電池層ｌに／．６ ｅＶ、下部電池層λに
ｏ．ｑｓ ｅＶのバンドギャップをそれぞれ持つ半４体
祠料を用い、トンネル接合３により、これらコつのｐｎ
従合奄池の電気的接合を行わせる構造が理想的な構造と
されている。Here, the upper battery layer l has /. 6 eV, o. These pn
The ideal structure is one that allows electrical connections to be made.
このようなモノリシックカスケード形電池は、基板／の
上に多層をエビタキンヤル成長させ、順次に積層し一こ
い作製するので、各層の格子定数が一致しないと、各層
に、格子不整による欠陥が導入され、効革の低下を招く
。Such a monolithic cascade battery is manufactured by growing multiple layers on a substrate and sequentially stacking them in a single layer, so if the lattice constants of each layer do not match, defects due to lattice misalignment will be introduced in each layer. This leads to a decrease in effectiveness.
ところで、ＧａＡｓ太陽嵐池でもよく知られているよう
に、直接濱移の光吸収を利用する太陽電池では、舛キャ
リアの発生は牛導体のごく表面で起るので、その表面栴
結合が著しく、効率の向上を図ることができない。この
ため、上部電池層ダと上部電極６との間に、上部電池層
ｌの材料よりもバンドギャップが約０．３ ｅＶ程度大
きい材料による窓層ｊを設けて表面再結合の低減を図る
方法が採用されている。しかしながら、基板／がら上部
電池層ｅまでは格子定数が一致し、かつ上部電池層グの
バンドギャップがへ乙ｅＶ 、下部電池層コのバンドギ
ャップが０．９！； ｅＶ七勝う条件を満たす材料の組
み合わせは楓々存在するが、窓１ｔｉ ！まで考慮する
と、上記エネルギーギャップ値の関係を満たし、かつ格
子整合のとれる組４合わせは存在しない。By the way, as is well known in the case of GaAs solar storm ponds, in solar cells that utilize direct light absorption, carriers are generated on the very surface of the conductor, so the surface coupling is significant. Unable to improve efficiency. For this reason, there is a method of reducing surface recombination by providing a window layer j made of a material whose band gap is about 0.3 eV larger than that of the material of the upper battery layer l between the upper battery layer D and the upper electrode 6. has been adopted. However, the lattice constants from the substrate/glass to the upper battery layer e are the same, and the band gap of the upper battery layer is eV, and the band gap of the lower battery layer is 0.9! ; There are many combinations of materials that satisfy the conditions for achieving eV7, but there is no window 1ti! Considering the above, there are no four combinations that satisfy the above energy gap value relationship and are lattice matched.
そこで、エネルギーギャップ値を理想状麿からずらすか
、あるいは格子整合を犠牲にして、モノリシンクカスケ
ード太＠電池を作製する以外に方法はない。しかし、い
ずれにしでも、理想状態からずれるから、効率は向上せ
ず、編−素子の太陽電池よりも低い／Ｓ％程度の変換効
率しか実現されていなかった。Therefore, there is no other way than to deviate the energy gap value from the ideal value or to sacrifice lattice matching to create a monolithic cascade thick battery. However, in any case, the efficiency does not improve because of deviation from the ideal state, and only a conversion efficiency of about /S%, which is lower than that of a solar cell using a knitted element, has been achieved.
そこで、本発明の目的は、これら欠点を除去して、変侠
効￥の高い太陽電池を提供することにある０
かかる目的を達成するために、本発明でな、同一基板上
に下部電池層、トンネル接合層および上部電池層をこの
順序で積層したモノリシックカスケード形太−電池に２
いて、前記下乱、電池響をｐｎ接合電池で構成し、前記
上部電池層をＭＩＳ構債笥池で横８表する。Therefore, an object of the present invention is to eliminate these drawbacks and provide a solar cell with high variable efficiency. , a monolithic cascade type thick battery with a tunnel junction layer and an upper battery layer stacked in this order.
In this case, the above-mentioned disturbance and battery are constructed of pn junction batteries, and the upper battery layer is horizontally represented by an MIS structure.
以下に１面を参照して本発明の詳細な説明する。The present invention will be described in detail below with reference to one side.
本開明太・湯電池の一例を第２図に示す。梁２・・′１
に２いて、ｌは基板となるＩｎＰ単結晶、ヲ、は下部電
池層である工ｎＯ，５５ＧａＯ，４７Ａｓのｐｎｉ合３
、／θ゛丁ＩｎＰのｐ＋ｎ＋のトンネル接合層、／／け
上部篭池會であるｎ形の工ｎＯ，５２Ａ１８．４６Ａ−
６Ｎ ’２け絶縁層としての工ｎＯ，５２”ｏ、４ｓＡ
ｓ％極聾化絶縁膜であり、こ＋１ｊ−各層ｌ〜／２をこ
り順序で積層する。An example of the present invention pollack/hot water battery is shown in Fig. 2. Beam 2...'1
In 2, l is the InP single crystal that is the substrate, and wo is the lower battery layer, which is the pni composite of nO, 55GaO, and 47As.
, /θ゛D InP p+n+ tunnel junction layer, // an n-type junction layer with an upper cage association nO, 52A18.46A-
6N'2 as insulation layer nO, 52''o, 4sA
This is a s% extremely deafening insulating film, and layers 1 to 2 are laminated in this order.
具体的には、液相エピタキシアル法でまずｎ層のＩｎＰ
（キャリア濃度ｎ ＃ｌ′ｉｔ’θ ／ｃｃ）Ｊｈ板
ｒの（／／／）面上にＩｎ、、 Ｇａ、４． Ａｓ層り
のｎ形およびｐ形の各層を成長させた。＃厚はｐ層およ
びｎ層ともに０．１μｍとした。その上に、ＩｎＰのト
ンネル接合部／θのｐ層層およびｎ層層を順次に成長さ
せた。その膜厚は、それぞｎ、 ０．０７μｍとなるよ
うにした。Specifically, we first created an n-layer InP using a liquid phase epitaxial method.
(Carrier concentration n #l'it'θ /cc) In, Ga, 4. N-type and p-type layers of As were grown. #The thickness was 0.1 μm for both the p layer and the n layer. Thereon, an InP tunnel junction/θ p-layer and n-layer were sequentially grown. The film thickness was set to n and 0.07 μm, respectively.
その後、ｎ形のＩｎ。、５゜Ａｌ。、４８Ａｓ層／／を
Ｏ，，２ｐｍ成長させた。このＩｎＡｌＡｓ層／／の表
面に、陽極酸化法により、絶縁嘆１２を設けた。最後に
、Ａｕによる上部電極１３およびＡｕＧｅ （１０％）
による下ｓｉｉ極／１を形成した。Then, n-type In. , 5°Al. , 48As layer// was grown to a thickness of O,,2 pm. An insulating layer 12 was provided on the surface of this InAlAs layer// by an anodic oxidation method. Finally, the upper electrode 13 by Au and AuGe (10%)
The lower sii pole/1 was formed.
このようにして得られた太陽電池のエネルギー帯構造ば
゛、第３図に示すようになる。Ｉｎ。、５□Ａｌ。、４
８Ａｓ層／／の表面では、空乏智１５が形成されている
ため、太陽光の吸収により励起きれた電子は内部電界に
よりすみやかにトンネル接合部／θへ移動する。他方、
正孔は絶縁撲１２の界面へ集まる。The energy band structure of the solar cell thus obtained is shown in FIG. In. , 5□Al. , 4
Since a depletion layer 15 is formed on the surface of the 8As layer //, electrons excited by absorption of sunlight quickly move to the tunnel junction /θ due to the internal electric field. On the other hand,
The holes gather at the interface of the insulator 12.
このように、工ｎ。、５２Ａ１０．４８Ａｓ ＩＩ ／
／の表面では、正孔と電子が大きな内部電界により分離
さｎるので、従来のような窓層５を中いなくても、電子
と正孔の再結合確率が減少する。また、本例では、基板
ｒと各層との格子整合が完全に取れているため、効率の
低下を招く結晶欠陥が導入でれること本ない。In this way, engineering n. , 52A10.48As II /
On the surface of /, holes and electrons are separated by a large internal electric field, so the probability of recombination of electrons and holes is reduced without passing through the window layer 5 as in the conventional case. Furthermore, in this example, since the lattice matching between the substrate r and each layer is completely achieved, it is unlikely that crystal defects that would cause a decrease in efficiency would be introduced.
以上のようにして作製したモノリシックカスケード形太
陽亀池は、〃〜Ｂ％の変換効率を有１−１従来のものに
比較して、はるかく優れていることが確認された。It was confirmed that the monolithic cascade type Taiyo Kameike produced as described above has a conversion efficiency of ~B% which is far superior to that of the conventional one.
本実施例では、液相エピタキシアル法１（より作製した
太陽電池について述べたか、他の作製法、例えばＭＢＥ
法あるいはＭＯＣＶＤ法を明いても全く同様に作製でき
る。In this example, solar cells fabricated by liquid phase epitaxial method 1 are described, or other fabrication methods such as MBE are used.
It can be produced in exactly the same manner using the MOCVD method or the MOCVD method.
前述の実施例では、ｎ形のＩｎＰ ４板ｒ上にＩｎ。、
、Ｇａｏ、４． Ａｓ層？をｎ形層よびｐ形の順序で積
層したが、更に、ｐ形のＩｎＰ基板を用いて、ｐ形およ
びｎ形の順序に積層して、ＩｎＰ ）ンネル愛合／θを
ｎ層およびｐ層の順序に、また、下部電池層・θを工ｎ
Ｏ，５２Ａ’０，４８ Ａｓのｐ形層にすることによす
、絶赫膜との界面を蓄積層とする構造の太＠電池を得る
こともできる。しかし、この場合には、上述した実施例
に比較して、２％程度効率は低い。これはｐ形のＩｎＡ
ｌＡｓと絶縁膜界面でのバンドベンディングかｎ形のＩ
ｎ ＡｌＡｓの場合程には顕著でないためと考えられる
。In the above example, InP was deposited on four n-type InP plates. ,
, Gao, 4. As layer? were laminated in the order of the n-type layer and the p-type layer, but further, using a p-type InP substrate, the layers were laminated in the order of the p-type layer and the n-type layer, and the InP layer was laminated in the order of the n-type layer and the p-type layer. In addition, the lower battery layer θ is constructed in the order of
By using a p-type layer of O,52A'0,48As, it is also possible to obtain a thick battery having a structure in which the interface with the absolute film serves as an accumulation layer. However, in this case, the efficiency is about 2% lower than in the embodiment described above. This is p-type InA
Band bending at the interface between lAs and the insulating film or n-type I
This is thought to be because it is not as pronounced as in the case of nAlAs.
以上に説明したように、本発明による構造のモノリシッ
クカスケード形太陽電池では、基板と上部電池層および
下部電池層との格子不整合がなく、かつ窓層を用いなく
ても、表面再結合確率が減少しているため、変換効率が
向上する利点がある。As explained above, in the monolithic cascade solar cell having the structure according to the present invention, there is no lattice mismatch between the substrate and the upper and lower cell layers, and the surface recombination probability is high even without using a window layer. This has the advantage of improving conversion efficiency.
第１肉は従来構造のモノリシックカスケード杉太腸亀池
を模式的に示す断面図、第一図は本発明のモノリシック
カスケード形太＠電池の構成例を模式的に示す断面図、
第３図は第２１４示の太陽電電ノエネルギーバンド図で
ある。
ｌ・・・基板、 ２・・・下部電池層、３・
・・トノネル接合部、 ≠・・・上部電池層、Ｓ・・
窓層、 乙・・上部電極、７・・下部電極、
に 工ｎＰ基板、９ ・Ｉｎ。、５３Ｇａｏ
、４．Ａｓ下ｉｔ池層、／θ・・・工ｎＰ ｐ”ｎ十
トンネル接合部、／／ ・−・Ｉｎ。、５□Ａｌｏ、、
８Ａｓ 、ｆ部電池層、／２”’ １ｎＱ、５２ Ａ’
ｏ、４ＢＡｓ＠ 極０化絶縁膜、／３− Ａｕ上Ｎｉｌ
［、／ａ ＝・ＡｕＧｅ下九［Ｌｉ３・・・空乏層。
刊許出嘘人 日本電信電帖公社The first figure is a cross-sectional view schematically showing a conventional monolithic cascade type cedar intestine Kameike, and the first figure is a cross-sectional view schematically showing a configuration example of the monolithic cascade type thick@ battery of the present invention.
FIG. 3 is a solar energy band diagram shown in FIG. 214. l...Substrate, 2...Lower battery layer, 3...
...Tononel junction, ≠...upper battery layer, S...
Window layer, B...upper electrode, 7...lower electrode,
In Engineering nP substrate, 9 ・In. , 53 Gao
,4. As bottom layer, /θ... nP p”n ten tunnel junction, // ・-・In., 5□Alo,,
8As, f part battery layer, /2"' 1nQ, 52 A'
o, 4BAs@ polarized insulating film, /3-Nil on Au
[, /a = AuGe lower 9 [Li3... depletion layer. Liar published by Nippon Telegraph Telegraph Corporation
Claims (1)
部電池層をこの順序で積層したモノリシックカスケード
形太陽電池において、前記下部電池層をｐｎ接合電池で
構成し、前記上部電池層をＭＩＳ＠＠電池で構成したこ
とを特徴とする太陽電池。 ２、特許請求の範囲第１項記載の太陽゛転地において、
前記基板をＩｎＰで形成し、削紀下部電池層にＩｎＰに
格子整合したＩｎＧａＡＳ 、前記トンネル接合層とし
てＩｎＰのｐｎ 接合、前記上部電池層としてＩｎＰ
に格子整合゛したＩｎ１Ａｓを用いたことを特徴とする
太＃、送池。[Scope of Claims] Shun A monolithic cascade solar cell in which a lower battery layer, a tunnel junction layer, and an upper battery layer are laminated in this order on the same substrate, wherein the lower battery layer is composed of a pn junction battery, and the upper battery layer A solar cell characterized in that its layers are composed of MIS@@cells. 2. In the sun rotation location described in claim 1,
The substrate is made of InP, the lower battery layer is made of InGaAS lattice matched to InP, the tunnel junction layer is an InP pn junction, and the upper battery layer is InP.
A thick water supply pond characterized by using In1As with lattice matching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57091332A JPS58209168A (en) | 1982-05-31 | 1982-05-31 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57091332A JPS58209168A (en) | 1982-05-31 | 1982-05-31 | Solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58209168A true JPS58209168A (en) | 1983-12-06 |
Family
ID=14023484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57091332A Pending JPS58209168A (en) | 1982-05-31 | 1982-05-31 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58209168A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100374020B1 (en) * | 2000-09-25 | 2003-02-26 | 학교법인고려중앙학원 | Thin film solar cell and method for its manufacture |
| CN113690335A (en) * | 2021-10-26 | 2021-11-23 | 南昌凯迅光电有限公司 | Improved three-junction gallium arsenide solar cell and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS571268A (en) * | 1980-03-25 | 1982-01-06 | Us Government | Device for convering electromagnetic radiation to electric energy |
-
1982
- 1982-05-31 JP JP57091332A patent/JPS58209168A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS571268A (en) * | 1980-03-25 | 1982-01-06 | Us Government | Device for convering electromagnetic radiation to electric energy |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100374020B1 (en) * | 2000-09-25 | 2003-02-26 | 학교법인고려중앙학원 | Thin film solar cell and method for its manufacture |
| CN113690335A (en) * | 2021-10-26 | 2021-11-23 | 南昌凯迅光电有限公司 | Improved three-junction gallium arsenide solar cell and manufacturing method thereof |
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