JPS58209167A - Amorphous silicon solar battery - Google Patents
Amorphous silicon solar batteryInfo
- Publication number
- JPS58209167A JPS58209167A JP57091180A JP9118082A JPS58209167A JP S58209167 A JPS58209167 A JP S58209167A JP 57091180 A JP57091180 A JP 57091180A JP 9118082 A JP9118082 A JP 9118082A JP S58209167 A JPS58209167 A JP S58209167A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- amorphous
- amorphous silicon
- ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101100008048 Caenorhabditis elegans cut-4 gene Proteins 0.000 description 1
- 101100454194 Caenorhabditis elegans mei-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000238557 Decapoda Species 0.000 description 1
- 241001648319 Toronia toru Species 0.000 description 1
- WBGNVADHURSIJJ-UHFFFAOYSA-N [In].[Pb].[Sn] Chemical compound [In].[Pb].[Sn] WBGNVADHURSIJJ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- FWQHNLCNFPYBCA-UHFFFAOYSA-N fluoran Chemical compound C12=CC=CC=C2OC2=CC=CC=C2C11OC(=O)C2=CC=CC=C21 FWQHNLCNFPYBCA-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
〔発明の4fる技術分野j
本宅間はアモルファスシリコンt−用いた太・′4イm
に1すもものである。[Detailed description of the invention] [4F technical field of the invention] Hontakuma is a thick 4-inch film using amorphous silicon T-
1 plum.
従栄の太・44池や光横出4のような光起電力裟瀘は、
天場光線を・区接亀気エネルギーに変換することができ
るが、こ比らの湊處の間@点として、他の[気エネルギ
ー発生を段と比較して艷屈jストが非常・て大きいこと
があげられる。その玉り)原因は、主体を構成する半導
体材料の↑り胴切4が低く、またその半導体材料の11
11i漬コストが高1ハことt/lる。睦近アモルファ
スシリコンはこれらの問題哉を解決できる半導′体材料
として庄目さ性だ1〜て奄へる。すなわち、アモルファ
ス7リコ/は7ランやフロルンランなどのシリコン化合
物ガスのグロー放14E<より店主するプラズマをfu
用して、ガス原料より直接製造することができ、また輌
遺時の益度も薬結晶材料製造に比較してきわめて低樋で
あるためをl1tli且つ大1に装作することが町々ヒ
で、ある。Photovoltaic power sources such as Juei's Tai 44 Pond and Hikari Yokoide 4,
It is possible to convert the celestial rays into ``Kei energy'', but as a point between these two points, the bending is extremely difficult compared to other ``Ki energy generation'' steps. I can say something big. The cause of this is that the ↑ body cut 4 of the semiconductor material that makes up the main body is low, and the 11
11i pickling cost is high 1 t/l. Muchika amorphous silicon is considered to be a semiconductor material that can solve these problems. In other words, amorphous 7 Lico/Fu generates plasma from glow emission of silicon compound gas such as 7 Lan or Fluoran.
Since it can be produced directly from gas raw materials, and the benefit in terms of disposal is extremely low compared to the production of medicinal crystal materials, it has become popular in towns and cities to use So, there it is.
しかし、従来知られているreルファスシリコンを用い
た太4イ池に分いてもいくつり)の、+rj :* =
xがある。第1図は如来のアモルファスシリコ/太1l
IIイ池の1例の断司模式図である。11は贋九性絶醸
苓板、12け透明導鑞極からなる哨1の#を嘱、13は
rモルフアメシリコンIn、14d−&41+IIt・
Iアルミニウムからなる第2のt啄でろりオーミノり・
t−i、=ケも、rモルファスシリコ71113には厚
み方向に所定の接合が形成されている。これによると−
rをルファスシリコン+113とのオーミック4垂でわ
る第2電極14にけrルミニウムを用いているダ、1汀
紀アルミニウムは例えばスパッタや藁着によって形成さ
せている。しかしこのアルミ:クムとアモルファスシリ
コンと(はオーミック性が良いと′はLlttt’一般
!(接触抵抗が大きい。又、リード→とり出しのための
、1/vだ付けがむrかしいと1ハう欠点がj)ろ。@
71記の接触抵抗を低減させろべくクロムを用いたりし
ているが、このクハムナ高1曲でちり、また公害の1川
哨があるなどの欠点+月゛している。また−rルミニウ
ムは拡赦しやすいという性質があり、アルミニウム形成
時の4度上昇尋も加わり、アモルファスシリコン中に拡
ML太44池4)時性を悪化さきたり、第1イ囁12で
ある*1.41141t4とショートしたりする尋の問
題を何している。However, +rj : * =
There is x. Figure 1 is the Tathagata's amorphous silico/thick 1l.
It is a schematic diagram of an example of a pond II. 11 is a counterfeit board, 12 transparent conductive electrodes are used for #1, 13 is r-morph American silicon In, 14d- & 41+IIt.
I The second T-takuderori-ominori made of aluminum.
t−i,=ke also has a predetermined bond formed in the rmorphous silicon 71113 in the thickness direction. According to this -
The second electrode 14, in which r is divided by an ohmic quadrature of rfus silicon + 113, is made of aluminum, and the first period aluminum is formed by, for example, sputtering or straw deposition. However, this aluminum and amorphous silicon (have good ohmic properties and 'Llttt' in general! (contact resistance is large. Also, it is difficult to attach 1/V for lead → extraction). The drawback is j)ro.@
Although chromium is used to reduce the contact resistance as described in No. 71, it has drawbacks such as dust and pollution at just one turn of Kuhamuna High School. In addition, -r aluminum has the property of being easily amenable, and with the addition of the 4 degree rise when aluminum is formed, the expansion of ML in amorphous silicon may worsen the temporality and cause the first problem. 1. What are you doing about the short circuit with 41141t4?
ド゛シ明はhg己した徹に鑑みてなされたものでろり、
リード1線の取り出しを簡単化して歩dりを向上さする
と埃にアモルファスシリコンと宅属4*の接触抵抗を低
減さげ、特性の区いアモルファスシリコン太・場鑞池を
提供出来るようにするものでろも。Doshiaki was probably made with Toru in mind,
It simplifies the removal of one lead wire, improves the lead rate, reduces the contact resistance between amorphous silicon and metal 4*, and makes it possible to provide amorphous silicon with different characteristics. Deromo.
本発明はrモルファスンリコン!−上のオーミック成極
をモリブデン等とニッケルで構すyきせもことによね上
記目的を達成する。The present invention is rMorphson Recon! - The above object is particularly achieved by constructing the upper ohmic polarization with molybdenum or the like and nickel.
本発明VCよt′LIli、ニッケルを用いる参りこよ
り、・リード取抄出しが4易に行なえるようンこなり、
1〜かもアモルファスシリコンとのi5にモリjデン逓
を介挿させることによりオーミック性つ;阪好となり接
触抵抗が減少゛ζもと共にアモルファスシリコン中への
メタルの拡赦の問題もなくなり、友4戒池の特性を向上
させることができる。Since the VC of the present invention uses nickel, lead extraction can be easily performed.
1 ~ By inserting molybdenum into i5 with amorphous silicon, the ohmic property is improved, the contact resistance is reduced, and the problem of metal expansion into the amorphous silicon is also eliminated, making it possible to You can improve the characteristics of Kaiike.
本活明1でよるl鵠輸列の断時模式1菌全IL 2・閾
に承t、21はガラス等の透光性絶碌瘍板、22は11
[’J1f)Onλノ秀”1J−4イ;莫([rO)
6・ラー1’2ルm l′1t41 テ4 rl、F
醜K 5 o O’<)lJl+7) モ+)−1デン
(+4o )4 rliげ没けられてVhも。ここでは
、アモルファスシリ−1y 4 ゛dンランK F32
1(6,Pt13 f奈卯してグロー改電分解さす、1
4さ150λつP4.5000尺の1−4次(へで5o
o’l−のn−を形成し欠。この陵、:W(O次0でN
’ t’l M〜l 50’017)Arガス中テア7
) X ハノ4’−で形成した。これは鮨(蝮1rも邊
い。Time-interruption model of the l-transportation sequence according to the present activity Mei 1. 1. Total IL 2. Acceptable at the threshold. 21 is a translucent insufficiency board such as glass. 22 is 11
['J1f) Onλ no Hide” 1J-4i; Mo ([rO)
6・ra1'2rum l'1t41 te4 rl,F
Ugly K 5 o O'<)lJl+7) Mo+)-1den(+4o)4 rli is lost and Vh is also lost. Here, amorphous series 1y 4 dn run K F32
1 (6, Pt13
4.150λ P4.1-4th order of 5000 shaku (Hede 5o
Forms n- of o'l- and lacks. This mausoleum, :W(O next 0 and N
't'l M~l 50'017) Tear 7 in Ar gas
) X formed with Hano4'-. This is sushi (1r of shrimp is also close).
□帽−を・直ちくけける4倉には時に6浬は必要tケ(
ハが、大気中に比較的民時、iJi・tかれた4倉に−
iミラエツトはドライエツチングにより〜(o p面の
室体4を・余去tろ。この麦、着板を100°Cに加熱
しながらリード(Cu)をニッケル・−に半1t」1・
tけした。□Sometimes 6 yen is required for 4 storeys where you can put on a hat directly.
There was a relatively small amount of water in the atmosphere, and there were 4 warehouses with iJi・t.
The lead is made by dry etching (remove the chamber body 4 on the op side. While heating the plate to 100°C, add half a ton of lead (Cu) to nickel.
I got it.
許、#!dイ/ジウムースズ又はインジウム−鉛−スズ
を用・−>to
晴るTs戎によって、4E素材料の拡故が防止され、尺
JII4池特性の方体を防とできると決にニッケル・曽
、ζLり半lB付けが嘱りて6鈷とtっだ。rE1’J
% ニッケルけそのままではアモルファス/すjンと
のオーミック性が悪く、特性劣化の1■囚とf 、、
rlり密着性が劣っているため剥れが生じ感いが l:
IJブデンを介挿させた事にLゆこれらの間4 シi
4夫さ性、接@低抗の減少、剥離つ防止を46参ができ
toこの実施例ではモリブデンを介挿さc石1合J(C
つ1ハで述べたが、チタン([’i)、タングスデ/〜
■、タンタル(’ra)でもIf1様の幼縦を得る事が
できる。Huh, #! By using d/dium-tin or indium-lead-tin, the expansion of the 4E material can be prevented, and the cube characteristic of Shaku JII 4 can be prevented. ζL and half lB were attached, and it was 6 and t. rE1'J
% If nickel is used as it is, it will have poor ohmic properties with amorphous/sun, resulting in deterioration of characteristics.
Due to poor adhesion, it may peel off and feel like l:
L Yuko for having IJ Budden inserted 4 shi
4. In this example, molybdenum is inserted to reduce the contact resistance, reduce contact resistance, and prevent peeling.
As mentioned in 1c, titanium (['i), tangsude/~
■You can also obtain If1's youthful height with tantalum ('ra).
4、!望i苗の側御な虎刈
・薫1・91J It士従来のアモルファスシリコン入
・4.tlt12C:) 1列を示した所面号でちり、
・コル2図は本発月しでよる1寿4例のアモルファスシ
リコ/太・場4池を示した断面図である。、・41こ於
いて、21・・・透光性絶縁+ξ板、
22・・・透明導邂僕(@1ば甑)、
23・・・アモルファスシリコンー1
、z4・・・ニッケル(第2電極)、
25・・・モリブデン(I窮2鑞甑)。4,! Nozomi Nae's side Torakari Kaoru 1 91J It's conventional amorphous silicon containing 4. tlt12C:) Dust with the place number showing 1 column,
・Figure 2 is a cross-sectional view showing the amorphous silico/Taiba 4 pond of 4 cases of 1st life according to Honbatsugetsu Shide. ,・41 Here, 21...Transparent insulation + ξ plate, 22...Transparent conductor (@1 Bakoshi), 23...Amorphous silicon-1, z4...Nickel (second Electrode), 25...Molybdenum (I-Kin2).
Claims (1)
る第2のIt極が順次形成されたアモルファス7リコン
反・場4池にお瞥ハで、前記第21蝋をニッケルj−受
び該・−丁に役けられたモリブデン、チタン、タングス
テン又はタンタルf−かう成る211(造とし免ことを
持gとするrモルファスシリコン太44池。Looking at the amorphous 7-recon board, in which the second It pole, which is the first pole made of a transparent conductor, was sequentially formed on the blue-light-emitting resistant plate, the 21st wax was applied. A morphous silicon material made of molybdenum, titanium, tungsten or tantalum with a nickel base.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57091180A JPS58209167A (en) | 1982-05-31 | 1982-05-31 | Amorphous silicon solar battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57091180A JPS58209167A (en) | 1982-05-31 | 1982-05-31 | Amorphous silicon solar battery |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58209167A true JPS58209167A (en) | 1983-12-06 |
Family
ID=14019250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57091180A Pending JPS58209167A (en) | 1982-05-31 | 1982-05-31 | Amorphous silicon solar battery |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58209167A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0275166A2 (en) * | 1987-01-13 | 1988-07-20 | Siemens Solar Industries L.P. | Thin film solar cell |
US4765845A (en) * | 1984-06-15 | 1988-08-23 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Heat-resistant thin film photoelectric converter |
-
1982
- 1982-05-31 JP JP57091180A patent/JPS58209167A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4765845A (en) * | 1984-06-15 | 1988-08-23 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Heat-resistant thin film photoelectric converter |
EP0275166A2 (en) * | 1987-01-13 | 1988-07-20 | Siemens Solar Industries L.P. | Thin film solar cell |
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