JPS58206995A - Radiant ray detector - Google Patents
Radiant ray detectorInfo
- Publication number
- JPS58206995A JPS58206995A JP57089900A JP8990082A JPS58206995A JP S58206995 A JPS58206995 A JP S58206995A JP 57089900 A JP57089900 A JP 57089900A JP 8990082 A JP8990082 A JP 8990082A JP S58206995 A JPS58206995 A JP S58206995A
- Authority
- JP
- Japan
- Prior art keywords
- face
- scintillator
- ray detector
- light
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 230000005855 radiation Effects 0.000 claims description 17
- 238000001514 detection method Methods 0.000 abstract description 12
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、シンチレータと多チャ/ネル型フォトダイ
オードとを有する放射線検出器の技術分野に属する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention belongs to the technical field of radiation detectors having a scintillator and a multi-channel photodiode.
放射線断層撮影装置たとえば第6世代あるいは第4世代
のX線CT装置は、複数の検出素子を高密度に一次元配
列してなるX線検出器を有して(Aる。X線検出器とし
ては、従来主流を占めていたガス電離箱の代わりに、近
年、シンチレータとフォトダイオードとを組み合わせた
固体シンチレーション検出器が汎用さnて来た。という
のは、固体シンチレーション検出器に使用されるフォト
ダイオードは高密度実装が可能であるので、高分解能の
01画像を得るためには検出素子の配列ピッチをできる
だけ小さくしなければならないという要請に応すること
ができるからである。Radiation tomography devices For example, 6th generation or 4th generation X-ray CT devices have an In recent years, solid-state scintillation detectors that combine a scintillator and a photodiode have become widely used instead of gas ionization chambers, which have traditionally been the mainstream. This is because diodes can be mounted in high density, so it is possible to meet the requirement that the array pitch of the detection elements must be made as small as possible in order to obtain a high-resolution 01 image.
第1図に示すように、X線検出器1は、半導体層2王に
複数の受光素子 3.(−3Eを、−次元に配列ざ・n
るように、形成してなる多チヤンネル型フォトダイオー
ド6と、受光素子シ〜6Eに透明な接着剤4たとえばガ
ラス用接着剤で接合さnたシンチレーション素子5A〜
5Eとを具備する。そして、多チヤンネル型フォトダイ
オード6σ)製造上の都合から、半導体層2にはその裁
断縁辺から一定領域を不感領域とするために、半導体層
2上さくしなければならなかった。また、前記多チヤン
ネル型フォトダイオード6で嘴、各受光素子6A%Eの
間隔が等しくなるように受光素子3A−3Bが形成され
ており、シンチレーション素子5A〜5Eは、そnぞ几
同−の直方体状をなすと共に、同一ピッチをもって前記
フォトダイオード6中の受光素子67〜6Eに接合さn
ており、受光素子’5に一5Eとの接合面以外の各面に
は、クロストーク防止のために、元反射材6がコーティ
ングさnている。As shown in FIG. 1, the X-ray detector 1 includes a plurality of light receiving elements on a semiconductor layer 2.3. (-3E is arranged in the - dimension.
The multi-channel photodiode 6 formed as shown in FIG.
5E. For reasons of manufacturing the multi-channel photodiode (6σ), it was necessary to provide a certain area on the semiconductor layer 2 from the cut edges thereof as a non-sensitive area. Further, in the multi-channel photodiode 6, the light receiving elements 3A to 3B are formed so that the spacing between the beak and each light receiving element 6A%E is equal, and the scintillation elements 5A to 5E are arranged in the same manner. It has a rectangular parallelepiped shape and is connected to the light receiving elements 67 to 6E in the photodiode 6 with the same pitch.
Each surface of the light-receiving element 5 other than the bonding surface with the light-receiving element 5E is coated with a reflective material 6 to prevent crosstalk.
しかしながら、前記構成のX線検出器1には、−次元に
配列されたシンチレータ素子5A〜5EO)うち、両端
に位置するシンチレータ素子5A、5Eは、発する蛍光
を完全に受光素子3A、5Eに導びくことができないの
で、各シンチレータ素子5A−5Eに同じX1!量が入
射するにもかかわらず、両端に位置する受光素子5A、
5Eよりの出力信号が内側に位置する受光素子3B−3
Dよりの出力信号よりも小さくなることにより、多チヤ
ンネル型フォトダイオードの検出精度が低下するという
欠点がある。However, in the X-ray detector 1 having the above configuration, among the scintillator elements 5A to 5EO arranged in the − dimension, the scintillator elements 5A and 5E located at both ends completely guide the emitted fluorescence to the light receiving elements 3A and 5E. Since it cannot move, the same X1 is applied to each scintillator element 5A-5E! Despite the incident amount, the light receiving elements 5A located at both ends,
Light receiving element 3B-3 where the output signal from 5E is located inside
Since the output signal is smaller than the output signal from D, there is a drawback that the detection accuracy of the multi-channel photodiode is reduced.
前記欠点を解消するために、第2図に示すように、半導
体層2上に形成する受光素子6A〜6Eの受光面それぞ
nを同一にすると共に、不感領域を十分にとるために、
両端に位置する受光素子5A。In order to eliminate the above-mentioned drawbacks, as shown in FIG. 2, in order to make the light-receiving surfaces n of each of the light-receiving elements 6A to 6E formed on the semiconductor layer 2 the same, and to secure a sufficient dead area,
Light receiving elements 5A located at both ends.
6Eの受光面縁辺と半導体層2の縁辺との車路2A。A roadway 2A between the edge of the light-receiving surface of 6E and the edge of the semiconductor layer 2.
2Bを各受光素子5A−5Eの受光面間距離よりも大き
くしてなる多チヤンネル型フォトダイオード3を使用す
るx7検出器1も昶られている。A x7 detector 1 using a multi-channel photodiode 3 in which 2B is larger than the distance between the light-receiving surfaces of each of the light-receiving elements 5A to 5E has also been proposed.
しかしながら、第2図に示すX線検出器1は、たしカブ
に、両端に位置するシンチレータ素子5、イ。However, the X-ray detector 1 shown in FIG. 2 has scintillator elements 5, located at both ends of the top.
5Eは、その発する元を完全に両端に位置する受光素子
′!?A、6Eに導びくことができるのでちるが、複数
個のX線検出器1を一次元に配列した場什、xm検出器
1の端に位置するシンチレータ素子と隣のX線検出61
の端に位置するシンチレータ素子との間隔が、X線検出
器1内の内側に位置するシンチレータ素子の相互間隔よ
りも大きくなってしまうことにより、配列さnてなるX
線検出器全体しこおけるシンチレータ素子のピッチが等
間隔でなくなり、X線検出器全体の検出精度が低下する
という別の欠点を有する。5E is a light-receiving element located at both ends of the light emitting source! ? A, 6E, so if a plurality of X-ray detectors 1 are arranged in one dimension, the scintillator element located at the end of the xm detector 1 and the adjacent X-ray detector 61
The distance between the scintillator elements located at the ends of the X-ray detector 1 becomes larger than the mutual distance between the scintillator elements located inside the
Another drawback is that the pitch of the scintillator elements throughout the X-ray detector is no longer equal, reducing the detection accuracy of the X-ray detector as a whole.
なお、第1図および第2図において、矢印XはX?PM
の進行方向を示す。In addition, in FIG. 1 and FIG. 2, the arrow X is X? PM
Indicates the direction of travel.
この発明は、前記事情に鑑みてなさゎたものであり、多
チヤンネル型フォトダイオードの検出精度の低下がなく
、また、放射線検出器全体の検出精度の低下もない放射
線検出器を提供することを目的とするものである。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a radiation detector in which the detection accuracy of the multi-channel photodiode does not deteriorate, and the detection accuracy of the radiation detector as a whole does not deteriorate. This is the purpose.
前記目的を達成するためのこの発明の概要は、放Ha入
躬面がそわ、ぞわ同一形状である各シンチレータ素子と
、半導体層上の長手方向に配列、形成した各受光素子と
を、各シンチレータ素子の各放射線入射面が同一ピッチ
で一次元に配列されるように、接合してなる放射線検出
器において、長手方向の両端に位置する受光素子の受光
面を、両端より内側に位置する受光素子の受光面よりも
小さく形成すると共に、両端に位置するシンチレータ素
子の光出力面を、両端に位置する受光素子の受光面と同
一形状に形成したことを特徴とするものである。The outline of the present invention for achieving the above object is that each scintillator element whose Ha emitting surface is stiff and has the same shape, and each light receiving element arranged and formed in the longitudinal direction on a semiconductor layer, In a radiation detector made by bonding so that each radiation incident surface of the scintillator element is arranged one-dimensionally at the same pitch, the light receiving surfaces of the light receiving elements located at both ends in the longitudinal direction are aligned with the light receiving surfaces of the light receiving elements located inside from both ends. It is characterized in that it is formed smaller than the light-receiving surface of the element, and the light output surfaces of the scintillator elements located at both ends are formed in the same shape as the light-receiving surfaces of the light-receiving elements located at both ends.
第6図はこの発明の一実施例を示す概略断面図である。 FIG. 6 is a schematic sectional view showing an embodiment of the present invention.
第6図に示すように、この発明の一実施例である放射線
検出器たとえばX線検出器1が、第1図に示すX線検出
器1と相違するところは、主として一次元に配列されて
いるシンチレータ素子5A〜5J (/ζうち、1II
11端に位置するシンチレータ素子5A 、 5Eの光
出力面(底面)の形状が、−次元に配列さnた受光素子
6A〜6Eのっち両端に位置する受光素子3.(,3E
の受光面と同一1どなるように、側面から底面に向けて
切り欠いてなるシンチレータ素子5A、5Eを用いるこ
とである。もちろん、両端のシンチレータ素子5A、5
Eの光出力面以外の各面にはすべて元反射材6がコーテ
ィングさn、ており、また、目11記シンチレータ素子
5A、5EO)光出力面と両端に位置する受光素子ろA
、”、Eの受光面とは奇問な接着剤たとえLtガラス用
接接着剤接合さnている。As shown in FIG. 6, a radiation detector, for example, an X-ray detector 1, which is an embodiment of the present invention, differs from the X-ray detector 1 shown in FIG. scintillator elements 5A to 5J (of which /ζ, 1II
The shapes of the light output surfaces (bottom surfaces) of the scintillator elements 5A and 5E located at the ends of the light receiving elements 3. (,3E
The scintillator elements 5A and 5E are cut out from the side surface to the bottom surface so that the light receiving surface is the same as the light receiving surface. Of course, the scintillator elements 5A and 5 at both ends
All surfaces other than the light output surface of E are coated with an original reflective material 6, and scintillator elements 5A and 5EO) are coated with the light output surface and the light receiving elements A located at both ends.
The light-receiving surface of E is bonded with a strange adhesive, even an adhesive for Lt glass.
なお、第5図Iこおいて、第1図および第2図にイ3け
る番号と同一の番号で示すものは、第1図および第2図
におけるものと同一の部材である、以上のようにX線検
出器1を構成しているので。In addition, in Figure 5 I, the parts indicated by the same numbers as in Figures 1 and 2 are the same parts as in Figures 1 and 2. Since the X-ray detector 1 is configured as follows.
同じX HJitのXHを入射しても、各シンチレータ
素子5 A〜5E、特に両端に位置するシンチレータ素
子5A、5Eで発する蛍光を、完全に、両端に位置する
受光素子sA、sp:の受光面に導びくことができるか
ら、X線検出器1の検出精度の低下を防止することがで
きる。しかも、両側に位置するシンチレータ素子5A、
5Eの光出力面の面積を小さくしているので、それに応
じて両端に位置する受光素子3A、6EcD受光面を小
さくしたままで良く。Even if XH of the same XHJit is incident, the fluorescence emitted by each scintillator element 5A to 5E, especially the scintillator elements 5A and 5E located at both ends, is completely transferred to the light receiving surface of the light receiving element sA, sp: located at both ends. Therefore, a decrease in detection accuracy of the X-ray detector 1 can be prevented. Moreover, the scintillator elements 5A located on both sides,
Since the area of the light output surface of 5E is made small, the light receiving surfaces of light receiving elements 3A and 6EcD located at both ends can be kept small accordingly.
顕2図に示すX線検出器1のように、半纏体層2の長手
方向の長さを太きくシナくてもすむから、第6図に示す
複数のX線検出器1を一次元に配列しても、各シンチレ
ータ素子のX線入豹面を同じピッチで配列することがで
き、X線検出器全体としての検出精度の悪化を防止する
ことができる。As shown in the X-ray detector 1 shown in Fig. 2, it is not necessary to increase the longitudinal length of the semi-integrated body layer 2, so the plurality of X-ray detectors 1 shown in Fig. 6 can be arranged in one dimension. Even if they are arranged, the X-ray incident surfaces of the respective scintillator elements can be arranged at the same pitch, and it is possible to prevent deterioration of the detection accuracy of the entire X-ray detector.
以上、この発明の一実施例について詳述したが、この発
明は前記実施例に限定されるものではなく、この発明の
要旨の範囲内で適宜tこ変形して実施することができる
。Although one embodiment of the present invention has been described above in detail, the present invention is not limited to the embodiment described above, and can be implemented with appropriate modifications within the scope of the gist of the invention.
たとえば、両端に位置するシンチレータ素子5A(5E
)の形状は、前記実施例におけるものに限らず、第4図
に示すように、長手方向断面が台形となるような六面体
、あるいは第5図に示すよう蛋こ、光出躬面出光出豹面
に隣接する長手方向側面との間に豚曲面を形成したもの
であってもよい。For example, scintillator elements 5A (5E
) is not limited to the shape of the above embodiment, but may be a hexahedron with a trapezoidal cross section in the longitudinal direction as shown in FIG. A pig-curved surface may be formed between the surface and the longitudinal side surface adjacent to the surface.
この発明によると、長手方向の配列における両端に位置
する受光素子の受光面が、内側に位置する受光素子の受
光面よりも小さくなっていたとしても、放射線検出器の
検出精度の低下を防止することができる。しかも、放射
線入射面が同一であるシンチレータ素子を同一ピッチで
配列し、また、半導体層を長手方向に不必要に長くする
こともないので、放射線検出器を一次元に配列してなる
放射線検出器は、全体として、シンチレータ素子を同一
ピッチで一次元に配列することができ、全体としての検
出精度の低下をも防止することができる。According to this invention, even if the light-receiving surfaces of the light-receiving elements located at both ends of the longitudinal arrangement are smaller than the light-receiving surfaces of the light-receiving elements located inside, the detection accuracy of the radiation detector is prevented from deteriorating. be able to. Moreover, the scintillator elements with the same radiation incident surface are arranged at the same pitch, and the semiconductor layer is not unnecessarily long in the longitudinal direction, so the radiation detector is made by arranging the radiation detectors in one dimension. As a whole, scintillator elements can be arranged one-dimensionally at the same pitch, and a decrease in detection accuracy as a whole can be prevented.
【図面の簡単な説明】
第1図および第2図は従来の放射線検出器を示す断面図
、第6図はこの発明の一実施例を示す断面図、並びに第
4図および第5図はこの発明の他の実施例(こ使用され
るシンチレータ素子を示す概略斜視図である6
1・・・放射線検出器、 2・・・半導体層、 6
・・・多チヤンネル型フォトダイオードアレイs
3A〜3E・・・受光素子、 4・り接着剤s 57
〜5E川シンチレータ素子、 6・・・元反射材。
代理人 弁理士 則 近 憲 佑(ほか1名)XXXX
1 11
(
xxx
51
]′
/′
(′5.ル 4 国
、5A(5E)
;
“ 弔 5 図[Brief Description of the Drawings] Figures 1 and 2 are cross-sectional views showing a conventional radiation detector, Figure 6 is a cross-sectional view showing an embodiment of the present invention, and Figures 4 and 5 are cross-sectional views of a conventional radiation detector. Other embodiments of the invention (this is a schematic perspective view showing a scintillator element used here) 6 1... Radiation detector, 2... Semiconductor layer, 6
...Multi-channel photodiode arrays
3A to 3E... Light receiving element, 4. Adhesive s 57
~5E river scintillator element, 6... Original reflective material. Agent Patent Attorney Noriyuki Chika (and 1 other person) XXXX 1 11 (xxx 51]'/'('5. Ru 4 Country, 5A (5E); "Condolence 5 Diagram
Claims (1)
素子と、半導体一層上の長手方向に配列、形成した各受
光素子とを、各シンチレータ素子の各放射線入射面が同
一ピッチで一次元に配列されるように、接合してなる放
射線検出器において、長手方向の両端に位置する受光素
子の受光面を、両端より内側に位置する受光素子の受光
面よりも小さく形成すると共に、両端に位置するシンチ
レータ素子の光出力面を、両端に位置する受光素子の受
光面と同一形状に形成したことを特徴とする放射線検出
器。Each scintillator element whose radiation entrance surface has the same shape and each light receiving element arranged and formed in the longitudinal direction on one layer of semiconductor are arranged one-dimensionally with each radiation entrance surface of each scintillator element at the same pitch. As shown in FIG. A radiation detector characterized in that the light output surface of the scintillator element is formed in the same shape as the light receiving surfaces of the light receiving elements located at both ends.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57089900A JPS58206995A (en) | 1982-05-28 | 1982-05-28 | Radiant ray detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57089900A JPS58206995A (en) | 1982-05-28 | 1982-05-28 | Radiant ray detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58206995A true JPS58206995A (en) | 1983-12-02 |
Family
ID=13983604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57089900A Pending JPS58206995A (en) | 1982-05-28 | 1982-05-28 | Radiant ray detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58206995A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017129457A (en) * | 2016-01-20 | 2017-07-27 | 東芝メディカルシステムズ株式会社 | X-ray detector and X-ray CT apparatus |
-
1982
- 1982-05-28 JP JP57089900A patent/JPS58206995A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017129457A (en) * | 2016-01-20 | 2017-07-27 | 東芝メディカルシステムズ株式会社 | X-ray detector and X-ray CT apparatus |
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