JPS58206128A - Etching device - Google Patents

Etching device

Info

Publication number
JPS58206128A
JPS58206128A JP8857882A JP8857882A JPS58206128A JP S58206128 A JPS58206128 A JP S58206128A JP 8857882 A JP8857882 A JP 8857882A JP 8857882 A JP8857882 A JP 8857882A JP S58206128 A JPS58206128 A JP S58206128A
Authority
JP
Japan
Prior art keywords
etching
manifold
iron plate
nozzle
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8857882A
Other languages
Japanese (ja)
Inventor
Kazunari Hirayama
平山 和成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8857882A priority Critical patent/JPS58206128A/en
Publication of JPS58206128A publication Critical patent/JPS58206128A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To equalize the hydraulic pressure of an etching liquid applied to a material to be etched by moving the positions of openings of a plurality of nozzles st up to each manifold in a zigzag direction in a sine-curve form along the direction of movement of the material to be etched. CONSTITUTION:An iron plate 12 as the material to be etched is moved in an etching tank 11 at constant speed, the etching liquid 18 is ejected from a plurality of the manifolds 16 installed to an upper section and a lower section in the etching tank 11 and the nozzles 17 directly coupled with the manifolds, and the nozzles 17 are amplitude-operated within a prescribed range in the direction orthogonal to the direction of movement of the iron plate 12. Each manifold 16 itself is formed curvedly in the sine wave form. When the iron plate 12 is moved and the nozzles 17 are amplitude-operated in the direction orthogonal to the direction of movement of the iron plate, the value of hydraulic pressure applied to the iron plate 12 can be equalized.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、カラーブラウン管用シャドウマスクの製造等
に用いられるエツチング装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an etching apparatus used for manufacturing shadow masks for color cathode ray tubes.

〔発明の技術的背景〕[Technical background of the invention]

周知の如く、カラーブラウン管用のシャドウマスクは、
鉄板の板面に一定形状の小孔を多数規則的に配設したも
ので、上記小孔はエツチングにより形成される。すなわ
ち、所定のパターンを両面に焼ぎ付げた鉄板をエツチン
グ槽内に連続的に移動させ、エツチング槽内(配設した
ノズルからエツチング液、たとえば塩化才2塩の溶液を
噴出させ、パターンに従ってエツチングを行い、前述し
た多数の小孔を形成している。この小孔は一般に丸形か
矩形であり、それらの孔径や大ぎさは電子銃から放射さ
れる成子ビームの通過を規制し、パネル内面に形成され
たげい光面のげい光体へのランチングを左右するもので
あり、きわめて重要なものである。従ってシャドウマス
クの製造に当りては前記小孔をいかにサイズむらを生じ
ることなく所定形状にあげるかが重要なポイントとなる
As is well known, the shadow mask for color cathode ray tubes is
A large number of small holes of a certain shape are regularly arranged on the surface of an iron plate, and the small holes are formed by etching. In other words, an iron plate with a predetermined pattern baked on both sides is continuously moved into an etching tank, and an etching liquid, such as a dichloride solution, is spouted from a nozzle provided in the etching tank, and etching is performed according to the pattern. The large number of small holes mentioned above are formed.These small holes are generally round or rectangular, and their diameter and size regulate the passage of the Naruko beam emitted from the electron gun. This is extremely important as it determines the launching of the luminescent surface formed in the phosphor onto the phosphor.Therefore, when manufacturing a shadow mask, it is important to determine how to form the small holes in a predetermined manner without causing size irregularities. The important point is the shape.

ここで、従来の一役的なエツチングitを説明する。矛
1図において、1υはエツチング酸で、その内部には破
エツチング材である鉄板112が2組各一対のローラα
3(141により矢印方向に向って連続的に移動する如
く配設される61Gはエツチング夜供給用のマニホール
ドで、鉄板a2の両面と対1回するようにエツチング槽
(111内の上部および下部に配設される。このマニホ
ールド1eは、才2図で示すように、その畏さ方向が鉄
板α2の移動方向に沿う如<ia本が一定のピッチ(F
’m) Kて並設されている。
Here, the conventional etching IT will be explained. In Figure 1, 1υ is etching acid, and inside it there are two iron plates 112, which are etching materials, and each pair of rollers α.
3 (61G, which is arranged so as to move continuously in the direction of the arrow 141, is a manifold for night supply of etching. As shown in Figure 2, this manifold 1e is arranged at a constant pitch (F
'm) K are arranged side by side.

aηはエツチング液膚出用のノズルで、前記各マニホー
ルドfleにその長さ方向に対して一定のピッチ(P、
)で配設されており、その開口は鉄板u3と対向し1.
矢板α4の・両面に回ってエツチング液+、181を噴
出する。
aη is a nozzle for discharging the etching liquid, and a constant pitch (P,
), the opening of which faces the iron plate u3, and 1.
Spout etching liquid +, 181 on both sides of sheet pile α4.

上記構成ンこおいて、破エツチング材である鉄板りを2
組のローラ1I3H41により一定速度で移動させ、エ
ツチング槽(111内に設けたノズルαηからエツチン
グ!(ISを鉄板任2の両面に噴射し、鉄板圓に焼き付
ゆられたパターン通りのエツチングを行う。この場合、
各マニホールド傾に投げたノズル化ηは、才3図の矢印
で示すように、鉄板@の移動方向と直交する方向に、所
定範囲振幅動作させて、エツチング液1棚が鉄板u7J
のエツチング面に対し均等に当るようにしている。
Place 2 pieces of iron plate, which is an etching material, into the above-mentioned structure.
It is moved at a constant speed by a pair of rollers 1I3H41, and etching! (IS) is sprayed onto both sides of the iron plate 2 from a nozzle αη provided in the etching tank (111) to perform etching according to the pattern burned onto the iron plate circle. .in this case,
The nozzle η thrown on each manifold is operated with amplitude within a predetermined range in the direction orthogonal to the moving direction of the iron plate, as shown by the arrow in Figure 3, so that one shelf of etching liquid is applied to the iron plate U7J.
The etched surface is made to contact evenly.

なお、ノズルCI?lを振幅動作させる機構(は周知の
ものを用いてあり、図示は省略して(゛る。また、才3
図では鉄板(1:〕の下方に位置するマニホールド傾お
よびノズルαηを図示していないがもちろん才1図で示
すように配役してあり、上方に設けたノズルαηと同様
に所定範囲掘偏動作する。
In addition, nozzle CI? A well-known mechanism is used for the amplitude operation of l, and illustration is omitted.
Although the manifold tilt and nozzle αη located below the iron plate (1:) are not shown in the figure, they are of course arranged as shown in Figure 1, and similarly to the nozzle αη installed above, the manifold tilts and the nozzle αη operates in a predetermined range. do.

〔背景技術の問題点〕[Problems with background technology]

上記構成では次のような問題点が生じろ。すなわち、ノ
ズル惺ηから一定液圧でエツチング液u81を噴出して
いてもノズル鰭が振幅動作するため、ノズル(Lηの真
下とその画情とでは鉄板α3に加わるエツチング液CI
8の圧力に差が生じる。これはノイルσ゛nが真下に回
いたとぎがノズルαηと鉄板14とが距離が最も小さく
なるので鉄板u3に加わる液圧も高くなるが、その両画
ではノズルq1と鉄板0の距離が天才に大きくなるので
、鉄板113に加わる仮圧もそれにつれて低くなるため
である。このように、均一な圧力でエツチング液住碍が
かからないため、エツチングにより形成さnる孔の大ぎ
さ等にばらつきが生じてしまうっ ここで、矛4図1ま鉄板・12上にエツチングを施して
作製したフラットマスク12Gを示す。このフラットマ
スク・刀は多数の小孔2υを規則的て形成したもので、
鉄板(12の長さ方向に沿って、屓次作らnる。
The above configuration causes the following problems. In other words, even if the etching liquid u81 is ejected at a constant pressure from the nozzle η, the nozzle fin moves in an oscillating manner, so that the etching liquid CI applied to the iron plate α3 is
A difference occurs in the pressure of 8. This is because the distance between the nozzle αη and the iron plate 14 is the smallest when the nozzle σ゛n turns straight down, so the hydraulic pressure applied to the iron plate U3 is also high, but in both images, the distance between the nozzle q1 and the iron plate 0 is the genius. This is because the temporary pressure applied to the iron plate 113 also decreases accordingly. In this way, since the etching solution is not applied with uniform pressure, there will be variations in the size of the holes formed by etching. A flat mask 12G produced by the above method is shown. This flat mask/sword has many small holes 2υ regularly formed.
The iron plate (12) is made one after another along the length.

才5図(倶)は上記フラットマスク■を取出し、そこに
形成された小孔+211の図示X方凋、すなわち鉄板1
121の移動方向と直交する方向の孔径分布を透過率と
して測定する場合を示し、同図(lfi3はその結果を
表わす。この場合、X方司の透過率の分布は、才4図1
で示す如く、才2図で示した各7二木一ルド1lE9間
のピッチ(pm)にほぼ一致するように変化する。すな
わち、ノズル111の真下(マニホールドの真下でもあ
る)lマ液圧が高いため、孔径が大きくなり透過率が上
ってしま1、・、均一な孔径分布を得ることができない
Figure 5 (2) takes out the above flat mask (■) and inserts the small hole +211 formed therein in the X direction shown in the figure, that is, the iron plate 1.
This figure shows the case where the pore size distribution in the direction perpendicular to the direction of movement of 121 is measured as transmittance.
As shown in Fig. 2, the pitch (pm) changes to almost match the pitch (pm) between 7, 2, 1, 1, and 9 shown in Fig. 2. That is, since the liquid pressure is high directly below the nozzle 111 (also directly below the manifold), the pore diameter increases and the transmittance increases, making it impossible to obtain a uniform pore diameter distribution.

このよう江、従来のエツチング装、菫では、各マニホー
ルド(lGに亘績しているノズル1ηが初期位置(蚕鴫
停止時)建て一直線状に配設され、かつこれが全て鉄板
と直角に向いているため、ノズルqηを蚕福動作させな
がらエツチング液111を噴出しても鉄板α2に当るエ
ツチング液l18の液圧は均一とはならず、小孔2υの
孔径がマニホールドlleのピッチ(Pl)とほぼ等し
い周期で変動してしまい、シャドウマスクの性能が低下
する問題があった。
In the conventional etching equipment and Sumire, the nozzles 1η extending over each manifold (lG) are arranged in a straight line in the initial position (when the silkworm is stopped), and all of these are oriented at right angles to the iron plate. Therefore, even if the etching liquid 111 is ejected while operating the nozzle qη, the pressure of the etching liquid 118 hitting the iron plate α2 will not be uniform, and the hole diameter of the small hole 2υ will be different from the pitch (Pl) of the manifold lle. There was a problem in that the performance of the shadow mask deteriorated because it fluctuated at almost equal intervals.

上記問題点はマニホールドtieの本数を増やせば少し
ずつよくなるが、装置全体が複雑化し、コストが上昇す
るという新たな問題点を生じてしまう。
The above-mentioned problem can be gradually improved by increasing the number of manifold ties, but this results in new problems such as the complexity of the entire device and increased cost.

〔発明の目的〕[Purpose of the invention]

不発明の目的は、従来と司じマニホールド2よびノズル
本数にてコストアップを生じさせることなく、弧エツチ
ング材九対してエツチング液を均一な液圧で工えること
を可能i(したエツチング装置を提供することKある。
The purpose of the invention is to create an etching device that can apply etching liquid to arc-etched materials with uniform pressure without increasing the cost of the conventional manifold 2 and the number of nozzles. I have a lot to offer.

〔発明の概要〕[Summary of the invention]

本発明てよるエツチング装置;、内部を破エツチング材
が連続的て移動するエツチング層と、このエツチング層
内の層エツチング材と対向する部分に設けられ長さ方向
が翌エツチング材の移動方向K (a 5如く複数不一
定ピツチで並設されたマニホールドと、このマニホール
ドにその長さ方向に対して複数個一定ピツチで配8され
それぞれ前記噸エツチング材に岡って開口するエツチン
グ孜用のノズルと、このノズルを(エツチング材の移動
方向と電文する方1向に一足践囲蚕扁助乍させる・幾虜
とを備え、前記各マニホールドに投げた1数個のノズル
の開口位置を破エツチング材の#劾方回に沿う正弦a、
曲線状、で蛇行させたことにより、褒エツチング材に加
わるエツチング液の、液圧をその修動方向と直交する方
向に対しても均一にしたものである。
Etching apparatus according to the present invention; includes an etching layer in which a destructive etching material moves continuously, and a portion of this etching layer that faces the layer etching material, the length direction of which is the direction of movement of the next etching material K ( A. A plurality of manifolds arranged in parallel at irregular pitches as shown in 5, and a plurality of etching nozzles arranged on this manifold at a constant pitch in the length direction of the manifold, each of which opens toward the etching material. This nozzle is equipped with a number of screwdrivers (one step in the direction of movement of the etching material and the direction of transmission), and the opening position of one or more nozzles thrown into each manifold is set to the etching material. The sine a along the direction of #
By making it meander in a curved manner, the hydraulic pressure of the etching liquid applied to the etching material is made uniform even in the direction perpendicular to the direction of movement of the etching material.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一央、5!!i例を図面を参照して説明
する。本発明によるエツチング装置も71図で示した従
来装置と同庫に、エツチング臂i1υ内′/C破エツチ
ング材である鉄板12を一定運度で、#勤させ、エツチ
ングll’lll同の上部?よび下部に設けた運数本の
マニホールドu61兄よびこれに直着するノズル鼎から
エツチング液lを噴出させ、つ)つこのノズル1171
ffニオ3図で示すよう;−鉄板α2の移動力;司と直
交する方向に一定範囲振幅動4乍させるものであるうこ
こで、従来と具なる点はノズル11?)の開口位置を鉄
板f、17Jの埠動方向に沿う正弦波曲線状に蛇行させ
たことにある。このよう”な構成とするため、この実施
例では、オ6図で示す如く、各マニホールド(le自体
を正弦波曲線状に彎曲形成している。この場合、各ノズ
ル住ηは撮福動作停止時(初期状態)において、全て鉄
板112の面と直角を成すように向いていてもよい。す
なわち、鉄板112+と直角を成す最も液圧の高い所が
一直線上にならばないので、鉄板qカを移動させ、かつ
ノズルαηを上記移動方向と直交する方向に蚕幅動作さ
せれば、鉄板t12に加わる液圧の高低を均一化するこ
とができる。
Hereinafter, the central part of the present invention, 5! ! An example will be explained with reference to the drawings. The etching apparatus according to the present invention is also installed in the same chamber as the conventional apparatus shown in FIG. The etching solution is spouted from several manifolds U61 provided at the bottom and nozzles attached directly to these nozzles 1171.
As shown in Figure 3, the moving force of the iron plate α2 causes a certain range of amplitude movement in the direction orthogonal to the main plate. ) is made to meander in the shape of a sinusoidal curve along the wharfing direction of the iron plates f and 17J. In order to achieve such a configuration, in this embodiment, each manifold (le itself) is curved in the shape of a sine wave curve, as shown in Fig. (initial state), they may all be oriented perpendicular to the surface of the iron plate 112.In other words, since the point with the highest hydraulic pressure that is perpendicular to the iron plate 112+ is not in a straight line, the iron plate q By moving the nozzle αη and moving the nozzle αη in a direction perpendicular to the above-mentioned movement direction, it is possible to equalize the height of the hydraulic pressure applied to the iron plate t12.

オフ図(α)は本発明装置によりエツチングして作製し
たフラットマスクI刀を示し、同図(A)はそこに形成
された多数の小孔QυのX方向、fなわち鉄板σ2の移
動方向と直交する方向の孔径分布を透過率として測定し
た結果を示す。この図から明らかなように、本発明装置
Kよりエツチングした場合、X方向の孔径分布はほぼ平
坦となり、才5図(A)で示した従来装置によるものの
よ5に17二ホールドtteのピッチ(Pl)苺に孔径
分布が周期的に変化するようなことはな(、高品質のシ
ャドウマスクを得ることができる。
Off-line diagram (α) shows a flat mask made by etching using the apparatus of the present invention, and diagram (A) shows the X direction of the many small holes Qυ formed therein, that is, the direction of movement of the iron plate σ2. The results of measuring the pore size distribution in the direction orthogonal to the transmittance are shown below. As is clear from this figure, when etching is performed using the device K of the present invention, the pore diameter distribution in the X direction is almost flat, and the pitch ( Pl) A high quality shadow mask can be obtained without periodic changes in the pore size distribution of strawberries.

才8図は本発明の他の実施例を示す。こD実施例では、
マニホールド161目体はI2尿状のものを用いるが、
このマニホールド(18Iに対するノズル+171の1
1 取付位置を正弦波曲液状/c死行させることにより、ノ
ズルσでの開口位置を正弦波曲線状に蛇行させている。
Figure 8 shows another embodiment of the invention. In this D example,
Manifold 161 The eye body uses I2 urine-like material,
This manifold (nozzle for 18I + 1 of 171
1 By setting the mounting position in a sinusoidal curved line, the opening position of the nozzle σ is made to meander in a sinusoidal curved line.

才9図は才8図で示した1本のマニホールt’ tie
 K 敗けけられたノズル(17a ) (17,6)
 −−−(17y )を並置して見た図である。
Figure 9 shows one manifold t'tie shown in Figure 8.
K defeated nozzle (17a) (17,6)
---(17y) are juxtaposed.

このように構成してもノズル(lηの開口は蚕幅動咋停
止時(初期状態)において−直線に並ぶことはないので
、従来のようにマニホールド(16!の真下に液圧の高
い所が集中することはなく、液圧の高低を均一化するこ
とがで蓼、孔径分布のばらつきをおさえることができる
Even with this configuration, the openings of the nozzles (lη) are not lined up in a straight line when the silkworm movement is stopped (initial state). By equalizing the level of liquid pressure without concentration, variations in pore size distribution can be suppressed.

なお、上記説明はカラーブラウン管用シャドウマスクを
エツチングにより製作する場合について行ったが、不発
明によるエツチング装置はもちろん他のエツチングにも
適用することができる。
Although the above explanation has been made regarding the case where a shadow mask for a color cathode ray tube is manufactured by etching, the present invention can be applied to other types of etching as well as the etching apparatus according to the invention.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、被エツチング材に対する
エツチング族の液圧が均一化されるので、従来のように
マニホールドのピッチに用当する周期で孔径変化が生じ
るようなことはなくなる。また、そのためにマニホール
ドやノズルの本数を増やす必要はなく、コスト上昇を招
くこともない。
As described above, according to the present invention, the liquid pressure of the etching group against the material to be etched is made uniform, so that there is no possibility that the pore diameter changes in the period corresponding to the pitch of the manifold as in the prior art. Moreover, there is no need to increase the number of manifolds or nozzles for this purpose, and there is no need to increase the cost.

【図面の簡単な説明】[Brief explanation of drawings]

才1図は従来のエツチング装置を示す全体購成図、才2
図は才1図で示したもののマニホールドとノズルとの配
置状態を示す平面図、才3図は従来装置におけるノズル
の娠喝動作と被エツチング材との関係を示す部分正面図
、才4図は従来製置によりエツチングされた製品の形状
を示す図、才5図(6)は、1?4図で示した製品を取
出しその孔径分布の測定法を説明する図、才5図(Al
はその則定結果を示す図1,1′F6図は本発明による
エツチング装置の一実施例ケマニホールドとノズルとの
配電状倭lでて示す平面図、オフ図(α)は本発明装置
、てよつエツチングされた実見の孔・歪分布の測定法を
説明する図、オフ図(j)はその測定結果を示す図、才
8図は不発明の他の実施例を示す平面図1.?9図は才
8図で示した1本のマニホールドに取付げらnた各“ノ
ズルを並置して示す図である。 11υ・・エツチング着、13・・層エツチング材、:
1F3・命マニホールド、117111・ノズル、 l
IS・・エツチング液。
Figure 1 is an overall diagram showing a conventional etching device, Figure 2 is
The figure is a plan view showing the arrangement of the manifold and nozzle of the device shown in Fig. 1, Fig. 3 is a partial front view showing the relationship between the nozzle priming operation and the material to be etched in a conventional device, and Fig. 4 is a plan view showing the arrangement of the manifold and nozzle. Figure 5 (6) is a diagram showing the shape of a product etched by conventional manufacturing.
1, 1'F6 is a plan view showing the electrical distribution between the manifold and the nozzle of an embodiment of the etching apparatus according to the present invention, and the off-line view (α) is a diagram showing the results of the etching according to the present invention. A diagram explaining the method for measuring the hole/strain distribution of actual etched specimens, an off-line diagram (j) is a diagram showing the measurement results, and Figure 8 is a plan view showing another embodiment of the invention. ? Figure 9 is a diagram showing the nozzles attached to the single manifold shown in Figure 8 juxtaposed. 11υ...Etching material, 13...Layer etching material:
1F3・Life manifold, 117111・Nozzle, l
IS... Etching liquid.

Claims (3)

【特許請求の範囲】[Claims] (1)内部を被エツチング材が連続的に移動するエツチ
ング槽と、このエツチング槽内の被エツチング材と対向
する部分に設けられ長さ方向が破エツチング材の移動方
向に?E?5如く複数本一定ピツチで並設された7二ホ
ールドと、このマニホールドにその長さ方向に対して複
数個一定ピツチで配設されそれぞれ前記被エツチング材
に向って開口するエツチング液用のノズルと、このノズ
ルを被エツチング材の移動方向と直交する方向に一定範
囲蚕1嘔動作させる機構とを備え、前記各マニホールド
に設げた複数個のノズルの開口位置な僚エツチング材の
移動方向九清う正弦波曲線状に蛇行させたことを特徴と
するエツチング装置。
(1) An etching tank in which the material to be etched moves continuously, and a part of the etching tank that faces the material to be etched is provided so that the length direction is in the direction of movement of the material to be etched. E? A plurality of nozzles for etching liquid are arranged in this manifold at a constant pitch in the length direction thereof and each of them opens toward the material to be etched. , a mechanism for moving the nozzle within a certain range in a direction orthogonal to the direction of movement of the material to be etched; An etching device characterized by meandering in the shape of a sinusoidal curve.
(2)  ノズルの開口位置を正弦波曲氷状に蛇行させ
るため、ノズルを取付けたマニホールドを正弦波曲線状
に彎曲させたことを特徴とする特許請求の範囲室1項記
載のエツチング装置。
(2) The etching apparatus according to claim 1, wherein the manifold to which the nozzle is attached is curved in a sinusoidal curve in order to meander the opening position of the nozzle in a sinusoidal curve.
(3)  ノズルの開口位置を正弦波曲線状に蛇行させ
るため、マニホールドには1育線状のものを用い、この
マニホールドに対するノズルの取付位置を正弦波曲線状
に蛇行させたことを特徴とする特許請求の範囲室1項記
載のエツチング装置。
(3) In order to make the opening position of the nozzle meander in a sinusoidal curve shape, a manifold with a single line is used, and the nozzle mounting position with respect to this manifold is made to meander in a sinusoidal curve shape. An etching apparatus according to claim 1.
JP8857882A 1982-05-25 1982-05-25 Etching device Pending JPS58206128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8857882A JPS58206128A (en) 1982-05-25 1982-05-25 Etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8857882A JPS58206128A (en) 1982-05-25 1982-05-25 Etching device

Publications (1)

Publication Number Publication Date
JPS58206128A true JPS58206128A (en) 1983-12-01

Family

ID=13946725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8857882A Pending JPS58206128A (en) 1982-05-25 1982-05-25 Etching device

Country Status (1)

Country Link
JP (1) JPS58206128A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194830A (en) * 1985-02-25 1986-08-29 Dainippon Screen Mfg Co Ltd Organic material removing device for substrate
JP2016187049A (en) * 2016-06-29 2016-10-27 小林 光 Cleaning apparatus and cleaning method of wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS557558U (en) * 1978-06-30 1980-01-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS557558U (en) * 1978-06-30 1980-01-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194830A (en) * 1985-02-25 1986-08-29 Dainippon Screen Mfg Co Ltd Organic material removing device for substrate
JPH0241897B2 (en) * 1985-02-25 1990-09-19
JP2016187049A (en) * 2016-06-29 2016-10-27 小林 光 Cleaning apparatus and cleaning method of wafer

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