JPS58201380A - Cooling type photoelectric converter - Google Patents
Cooling type photoelectric converterInfo
- Publication number
- JPS58201380A JPS58201380A JP57086115A JP8611582A JPS58201380A JP S58201380 A JPS58201380 A JP S58201380A JP 57086115 A JP57086115 A JP 57086115A JP 8611582 A JP8611582 A JP 8611582A JP S58201380 A JPS58201380 A JP S58201380A
- Authority
- JP
- Japan
- Prior art keywords
- terminal plate
- sealed
- tube
- photoelectric converter
- vacuum side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 19
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims description 30
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 230000009977 dual effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 241000218645 Cedrus Species 0.000 description 1
- 241000931705 Cicada Species 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
(a) 発明の技愉分舒
本発明は冷却型光゛邂変換装置の改良に係り、特にデユ
ワ構造の冷却#器に実装した光wL変侠水子に対する株
^用回路素子の配設構造に関するものである。[Detailed Description of the Invention] (a) Sharing of the Technology of the Invention The present invention relates to an improvement of a cooling type optical conversion device, and in particular to an optical conversion device mounted in a cooling device having a dewar structure. The present invention relates to the arrangement structure of circuit elements for use in the present invention.
(b) 従来技術と問題点
半導体よりhる赤外、m@知用の光電変換素子は、通常
筐体yj1素温度(約77″K)程度まで冷却した状態
で用いられている。従って従来の赤外線検知用光電変換
装W1は、内管と夕)管と力・らなるデユワ構造の断熱
冷却容器を用い、外管の一部に赤M線透過窓を設けると
共に、該透m窓に対向した内管に配設された冷却基台上
に赤りY線検知用九電変換素子を設筐し、かかる冷却容
器の内管内に液体窒素の如き液体冷媒を収納するかある
いはジュールトムソン型の冷却機を挿設して萌紀変換素
子を所定の低温に冷却して動作させる構成かとられてい
る。(b) Prior art and problems Photoelectric conversion elements using infrared light or light from semiconductors are usually used in a state where they are cooled to about the elementary temperature of the casing (approximately 77″K). The photoelectric conversion device W1 for infrared detection uses an adiabatic cooling container with a dewar structure consisting of an inner tube, an inner tube, and an outer tube. A nine electric conversion element for red Y-ray detection is installed on a cooling base placed in the opposing inner tube, and a liquid refrigerant such as liquid nitrogen is stored in the inner tube of the cooling container, or a Joule-Thomson type A cooler is installed to cool the Moeki conversion element to a predetermined low temperature and operate it.
一方上述した構成gcおける前記光電変換素子からの信
号出力は例えば変換素子が多素子型の場合、該変換素子
のIIIIi11+i1部に配設された中継端子板を介
して一散本のリード線によって前記外管祷−の一部を横
断する杉でMftされた禦状円板形のセラミック端子板
上の個別に管外に導出した導電膜パターンより取り出さ
れるものであるが、前記セラミック端子板上の個別に管
外に導出した導Wt展パタ−ンには、該該導aSパター
ンの各端部に予期しないリーク過電流や、また静電気等
による自火電圧が不測に印加され、前記光[変換素子が
破壊されるといった事態を防止するために保糟用の電流
制限抵抗を直列に配設するかあるいは前記直列に配設さ
れた電流mya抵抗と共に、電圧制御用のP1Nダイオ
ード等が並列に配設されている。On the other hand, in the case where the conversion element is a multi-element type, the signal output from the photoelectric conversion element in the above-mentioned configuration gc is carried out by scattered lead wires via a relay terminal board arranged at the IIIi11+i1 part of the conversion element. It is taken out from the conductive film pattern individually led out of the tube on the ceramic terminal plate in the shape of a circular disc made of cedar that crosses a part of the outer tube. Unexpected leakage overcurrent or self-ignition voltage due to static electricity or the like is unexpectedly applied to each end of the guided Wt expansion pattern led out of the tube individually, and the light [conversion In order to prevent the element from being destroyed, a current limiting resistor for protection may be arranged in series, or a P1N diode or the like for voltage control may be arranged in parallel with the current mya resistor arranged in series. It is set up.
ところが上述のように前記光電変換素子に対する体#用
の抵抗及びPINダイオード等カ)らなる回路素子を、
セフ(ツク端子板上の個別に外管に導出した導螺膜パ身
−ンに配設した構成にあっては、*t1記セ記文ラミッ
ク端子板上別tこ管外に導出した4fIi展パターンに
おける外管外周壁とMiJ記回路素子配設部位との間の
導′#L展パターン領域に直接過剰電流あるい社過大電
圧が印加される恐れがあり、no記保趙用回路素子の配
設構成の効果を充分に発揮することができないといった
欠点があった。また前記冷却g器の外周側に保護用回路
素子を配設することにより、その回路規模が増大し、当
該装置の小型化をさまたける一因にもなっている。However, as mentioned above, if a circuit element consisting of a resistor for the photoelectric conversion element, a PIN diode, etc.
In the case of a configuration in which the conductive spiral membrane is individually led out to the outer tube on the terminal board, *t1 marked 4fIi led out separately on the ramic terminal board There is a risk that excessive current or excessive voltage may be applied directly to the conductor pattern area between the outer circumferential wall of the outer tube and the MiJ circuit element arrangement area in the expansion pattern, and the protection circuit element in the no. There was a drawback that the effect of the arrangement configuration could not be fully demonstrated.Also, by arranging the protective circuit element on the outer circumferential side of the cooling device, the circuit scale increases, and the This is also one of the reasons for hindering miniaturization.
(C) f@明の目的
本発、明の目的は、上記従来の欠点を解消するため、光
電変換素子に対する保護用の電流制限抵抗素子やPIN
ダイオード等力)らなる回&I?1潮干を断熱冷却容器
内に配設し、該回路素子にょる保^効果を確実に発揮し
得るようにした■「規な冷jlfl型九電変換装置を提
供せんとするもσ〕である。(C) f@Aim of the present invention The purpose of the present invention is to eliminate the above-mentioned conventional drawbacks by providing a current limiting resistance element and PIN for protection of the photoelectric conversion element.
Diode, etc.) Ranaru times & I? 1. The circuit element is placed in an insulated cooling container to ensure that the circuit element has a protective effect. .
(d)@明の構成
上記目的を達成するために本発明の冷却型光電変換装W
1は、内管と外管と力・らなるデユワ構造の冷却容器を
主体とし、該内管の真空スペースI&1IIK元IIE
度換素子を支持せしめると共に、該光*変換素子のリー
ド標を、前記外晋器擬の一部を横断すチ
る形で封着したセラミック端末板上の導電膜パターンを
介して気密に導出してなる構成において、1記七う之ツ
ク端子板上にその上の導−膜パターンの真空鱈4部に接
続した杉で、ヒ記元電変換素子に対する保護用V)回路
素子を配設したことを特徴とするものである。(d) @Ming structure In order to achieve the above object, the cooling type photoelectric conversion device W of the present invention
1 is mainly composed of a cooling container with a dewar structure consisting of an inner tube and an outer tube, and the vacuum space of the inner tube is
In addition to supporting the optical conversion element, the lead mark of the optical conversion element is airtightly led out through a conductive film pattern on the ceramic terminal plate sealed in a cross-section across a part of the optical conversion element. In this configuration, V) a circuit element for protection against the electric power conversion element described in H is arranged on the terminal plate described in 1. It is characterized by the fact that
(e) 発明の実地例
以下図面を用いて本発明の実施例について嵯細に説明す
る。(e) Practical Examples of the Invention Examples of the present invention will be described in detail below with reference to the drawings.
第1図は本発明を適用した赤外酬検知用冷却型光電変換
装置の一実1池例を示す縦断面図、第2図はh1図のト
1′線に沿った横断面図である。第1図においてlはガ
ラス製の内管2と外W8とからなり、かつこれらの間を
排気’[4を通して真空排気されたデユワ構造の冷却容
器である。該内管2に配設された冷却基台5上には赤外
梅検知用光?it変換素子7が設置されており、また該
光電変換素子7に対向する外t8の紙部にゲルマニウム
等からなる赤外線通MK9が封着されている。また蔀外
督8の一部には、該外vr8を横断する形で環状円板形
のセラミック端子板10が図示のように封着されている
。そして該セラミック端子板10の表面には、第2図の
平囲図によって明らかなようにDII記九4貧侠累子7
に構成される膜数の受光素子(図示せず)と接続したり
一ドーロをIPi別に管外に導出するための金等からな
る導[Mパターン11が配設されて―るが本発明におい
て蝶、1111記専嵐膜パターン11の真空側配設部位
に、さらに例えをよ厚膜あるいは薄yIl技術によって
祠されたIKΩ〜IDKQf/!4度の上記光Wl駕換
索子7に対する保護用の回路素子、すなわち抵抗素子ν
がそれぞれ直列に配設されている。FIG. 1 is a longitudinal cross-sectional view showing an example of a cooled photoelectric conversion device for infrared radiation detection to which the present invention is applied, and FIG. . In FIG. 1, reference numeral 1 denotes a dewar-structured cooling container consisting of an inner tube 2 and an outer tube W8 made of glass, and the space between them is evacuated through an exhaust gas 4. An infrared detection light is provided on the cooling base 5 disposed in the inner tube 2. An IT conversion element 7 is installed, and an infrared transmitting MK9 made of germanium or the like is sealed to the paper portion of the outer t8 facing the photoelectric conversion element 7. Further, an annular disc-shaped ceramic terminal plate 10 is sealed to a part of the outer wall 8 so as to cross the outer wall 8, as shown in the figure. As is clear from the square diagram of FIG. 2, on the surface of the ceramic terminal plate 10,
In the present invention, a conductive pattern 11 made of gold or the like is provided to connect to a light receiving element (not shown) with a number of films configured to Butterfly, IKΩ~IDKQf/!, which is enshrined by thick film or thin yIl technology, is placed on the vacuum side of the 1111-specific storm membrane pattern 11. A circuit element for protection against the above-mentioned light Wl switching element 7 of 4 degrees, that is, a resistance element ν
are arranged in series.
このように充電変換素1−7にχ・1する保護用の抵抗
素干しを冷却容器l内の真空側411を膜パターン11
に直列に配設した構成にすることにより、口11記光電
&換素子7に、前記管外に導出せる4電麟パターン11
およびそのリード端子14より好ましくない過電流が流
入されることを確実に防止し、保−することができる。In this way, a protective resistor of χ・1 is placed on the charging conversion element 1-7, and the vacuum side 411 in the cooling container l is connected to the film pattern 11.
By configuring the photoelectric conversion element 7 to be arranged in series, a four-electron pattern 11 that can be led out of the tube is provided in the photoelectric conversion element 7.
And it is possible to reliably prevent and maintain undesirable overcurrent from flowing into the lead terminal 14.
またかかる抵抗素干しと、該抵抗素干し及びそれにつな
かる導MII11パターン11と七うミック膚子板lO
との間に生じるfPJIif容蓋とで構各音れるローパ
スフィルタによりスパイク状の電圧のt11間値を低く
することができるので、前記光1に変換素子7に対して
り)部力・ら過大′−圧が印加されるとと屯防止するこ
とがuJ舵となる。In addition, such a resistor drying, the conductor MII11 pattern 11 connected to it, and the seven UMIC skin board lO
Since it is possible to lower the t11 value of the spike-like voltage by using a low-pass filter that generates a noise between When the '-pressure is applied, the uJ rudder is used to prevent the rudder from collapsing.
#I8図は本発明に係る他の実j也雨を部分的に拡大し
て示しな端子板の要部平面図であり、第2図と同等部分
には同一符号を付している。第8図の実施例が第1図及
び第2図の実池例と異なる点は、冷却芥itの外管8の
一部を横りする形で封着されたセラ之ツク端子板lO上
の導[膜パターン11の真空側に抵抗素子臣をそれぞれ
型側に配設すると共に、その導電膜パターン11と前記
セラミック端子板10の裏面側に配設された図示しない
例えば充電変換素子7の基板電位と同電位を供給する導
電電極パターンとの間に前記セラミック端子板10に♀
殺されたスルーホール31を介して例えばPINダイオ
ードチップ32をフェイスダウンポンディング法により
並列に配設したことである。この実施例構成によっても
前記第1.第2図による実油例と同様に、1IIJ記光
邂変換素子7に対して外部より過心流あるいは過大磁圧
が流入印加されることを未然に防止し、体層することが
でき、本発明の目的を速成し得ることは明ら力・である
。Figure #I8 is a partially enlarged plan view of the main parts of another terminal board according to the present invention, and the same parts as in Figure 2 are given the same reference numerals. The embodiment shown in Fig. 8 is different from the actual pond example shown in Figs. Resistance elements are disposed on the vacuum side of the conductive film pattern 11 on the mold side, and the conductive film pattern 11 and a charge conversion element 7 (not shown) disposed on the back side of the ceramic terminal plate 10 are connected to each other. The ceramic terminal plate 10 is connected between the substrate potential and a conductive electrode pattern that supplies the same potential.
For example, PIN diode chips 32 are arranged in parallel via the blanked through holes 31 by face-down bonding. The configuration of this embodiment also allows the above-mentioned first. Similar to the actual oil example shown in FIG. It is obvious that the object of the invention can be accomplished quickly.
(f) 発明の効果
以上の説明力)も明らかなように本発明に係る冷却型光
電変WIA装隨によれば光−変換素子に対する体軸用の
抵抗素子、PINダイオード等からなる回路素子を冷却
容器内の真空側セラ尖ツク剤子板スペース上の4電膜パ
ターンに配設した構成がとられているので、1g器外よ
り光IM、変換素子に対して外部より好ましくない過′
6L流や自火電圧が流入印加され該素子が破壊されるこ
とを未然に、かつ確実に防止し、保護することができる
利点を有する。また装置の主体をなす冷tlII客器の
外周回路規模を増大させることがなくなり、力・つt」
11記抹護用の回路素子が真空中で保持されるので装置
aの周辺環境のi化や外力によって損慢するといったこ
とがなくなる等、すぐれた対果もイJし、表置の信頼性
が向上する。(f) Explanatory power that exceeds the effect of the invention) As is clear, the cooled photoelectric change WIA device according to the present invention has a circuit element consisting of a resistance element for the body axis, a PIN diode, etc. for the light-conversion element. Since the configuration is such that the 4-electrode film is arranged in a four-electrode film pattern on the vacuum side ceramic plate space in the cooling container, undesirable overload is applied to the optical IM and conversion elements from the outside of the 1g device.
This has the advantage of being able to reliably prevent and protect the element from being destroyed by the inflow of 6L current or self-ignition voltage. In addition, there is no need to increase the size of the outer circuit of the cold TL II customer equipment, which forms the main body of the device.
11. Since the circuit elements for erasure are held in a vacuum, there are excellent results such as no damage caused by the environment around the device or external force, and the reliability of the surface mounting is improved. will improve.
第1図及び第2図は本発明を適用した赤外IftA検知
用光゛醒に侠装置の一実地例を示す縦断面図及びそのl
−1f’切断蝉に沿った横断面図、第8図は本発明を適
用した赤外線検知用光七変換装丙の11シの実施例を示
すIM部平面図である。
図においてlは冷却容器、2は内骨、8は外管5は冷却
基台、7は光這変狭素子、lOけセラミック端子板、I
Iは導1’lU展パターン、臆は抵抗素子、13はリー
ド徊、31けスルホール、支はPINダイオードチップ
を示す。
37
第1図
第3IyIA
378−FIGS. 1 and 2 are longitudinal cross-sectional views showing an example of an infrared IftA detection light awakening device to which the present invention is applied, and its details.
-1f' is a cross-sectional view taken along the cut cicada, and FIG. 8 is a plan view of the IM section showing the eleventh embodiment of the seven optical conversion device for infrared detection to which the present invention is applied. In the figure, l is a cooling container, 2 is an inner bone, 8 is an outer tube 5 is a cooling base, 7 is an optically variable narrow element, 10 is a ceramic terminal plate, and I
I indicates a conductor 1'lU expansion pattern, 1 indicates a resistor element, 13 indicates a lead loop, 31 indicates a through hole, and a support indicates a PIN diode chip. 37 Figure 1 Figure 3 IyIA 378-
Claims (1)
し、該内管の真空スペース側に光電変換素子を支持せし
めると共に、該光電変換素子のリード線と、前記外管器
壁の一部を横断する形で封着吸 したセラミック端子に上の導電膜パターンを介して気密
に導出してなる構成において、前記セラミック端子板上
にその上の導電膜パターンの真空側端部に接続した形で
上記光電変換素子に対する保##Jの回路素子を配設し
たことを特徴とする冷却型光或変換装置。[Scope of Claims] The main body is a cooling device with a dewar structure consisting of an inner tube and an outer tube, and a photoelectric conversion element is supported on the vacuum space side of the inner tube, and the lead wire of the photoelectric conversion element and the In a structure in which a ceramic terminal is sealed and suctioned across a part of the wall of the outer vessel and is airtightly led out through a conductive film pattern on the ceramic terminal plate, the vacuum of the conductive film pattern thereon is placed on the ceramic terminal plate. 1. A cooling type light converting device, characterized in that a circuit element ##J connected to the photoelectric conversion element is arranged at a side end thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57086115A JPS58201380A (en) | 1982-05-20 | 1982-05-20 | Cooling type photoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57086115A JPS58201380A (en) | 1982-05-20 | 1982-05-20 | Cooling type photoelectric converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58201380A true JPS58201380A (en) | 1983-11-24 |
Family
ID=13877692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57086115A Pending JPS58201380A (en) | 1982-05-20 | 1982-05-20 | Cooling type photoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58201380A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03503862A (en) * | 1987-10-20 | 1991-08-29 | アルベリッド,ビルガー | Cutting tools with status indicators |
-
1982
- 1982-05-20 JP JP57086115A patent/JPS58201380A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03503862A (en) * | 1987-10-20 | 1991-08-29 | アルベリッド,ビルガー | Cutting tools with status indicators |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2469249B1 (en) | Infrared sensor | |
US4293768A (en) | Infrared radiation detecting apparatus and method of manufacturing | |
US5306915A (en) | Infrared detectors | |
US5379186A (en) | Encapsulated electronic component having a heat diffusing layer | |
US5167724A (en) | Planar photovoltaic solar concentrator module | |
US4302674A (en) | Infrared radiation detecting apparatus and method of manufacturing it | |
US4899204A (en) | High voltage switch structure with light responsive diode stack | |
US6111254A (en) | Infrared radiation detector | |
US5747876A (en) | Semiconductor device and semiconductor module | |
GB2145875A (en) | Infra-red-detector | |
US4535251A (en) | A.C. Solid state relay circuit and structure | |
US6180945B1 (en) | Dual spiral photoconductive detector | |
JP2001111159A (en) | Semiconductor laser device | |
US4950427A (en) | Transistor device | |
RU2760103C2 (en) | Radiation sensor with anti-glare protection | |
Sater et al. | The multiple junction edge illuminated solar cell | |
JPS58201380A (en) | Cooling type photoelectric converter | |
JPH0476943A (en) | Semiconductor element | |
JP2831616B2 (en) | Electrostatic discharge protection method and apparatus using high temperature superconductor | |
JPS5524405A (en) | Magnetoelectric conversion element and its manufacturing process | |
GB2133641A (en) | AC solid state relay circuit and thyristor structure | |
JP3160940B2 (en) | Thermopile | |
JPH049561Y2 (en) | ||
JPS59189619A (en) | Pyroelectric element | |
CN113629164B (en) | Down-in light type infrared sensor element and manufacturing method thereof |