JPS58199799A - Liquid growth method of group 3-5 compound - Google Patents

Abstract

PURPOSE:To improve reproducibility and workability in liquid growth of a group III-V compd., by using a soln. containing dissolved group V elements in a multi- element alloy added with other metals to a base metal such as Ga, In or the like. CONSTITUTION:A two-element or multi-element alloy wherein >=1 kind among Al, Zn, Te, Cd, Sn, Ge, Si are added in a trace amt. in a base metal such as Ga, In, Ga-In or the like and elements of the group V such as As are both fluxed. A semiconductor laser of a group III-V compd. or the like is epitaxially grown in a liquid phase by using such soln. The variation in oscillation wavelength of the semiconductor laser or the like is reduced by the above-mentioned method. It is desirable to use the two-element or multi-element alloy after forming the same into roughly the same shape as the soln. phase in a boat for growth in the above-mentioned method.

Description

[Detailed description of the invention] The present invention relates to a method for liquid phase growth of m-v group compounds.

Liquid phase epitaxial growth is widely used in the production of light emitting diodes and semiconductor lasers, and is currently an indispensable crystal growth technique for the production of these devices. In order to obtain a desired epitaxial layer, the ratio of elements constituting the solution and the temperature are set, the solution is introduced onto the substrate, and liquid phase epitaxial growth is performed. At this time, in order to control the crystal composition and impurity concentration with good reproducibility, it is necessary to weigh each component with good reproducibility when forming the solution.

However, it is particularly difficult to reproducibly weigh substances that are added in very small amounts among the substances that make up the solution.
The time required for weighing is also increased.

ClA1! -Due to variations in the amount of Af added to G& in the V group mixed crystal, and variations in the amount of Ga added to In in the InGa-V group mixed crystal; physical quantities such as the band gap and lattice constant of the grown crystal Change. Also, ■
- Even when adding a donor or acceptor impurity to the group solution, a very small amount must be weighed, and variations in this amount will change the characteristics of the fabricated device. For example, in light emitting diodes, semiconductor lasers, etc., the oscillation wavelength per emission cannot be controlled with good reproducibility, and variations in the threshold current per emission output and luminous efficiency per oscillation are caused.

The present invention provides a method for liquid phase growth of m-v group compounds that solves the conventional problems as described above.

The present invention is directed to materials that serve as a host (e.g., Ga,
In) is first added with a trace additive metal (e.g. he
, Zn, Te, Cd, Sn, Ge
, Si, etc.) is prepared, and it is rapidly cooled to produce a solid binary or multi-component alloy. This is a method in which a small amount of this alloy is dissolved together with elements of groups 1 and 2 to prepare a solution, and this solution is used to perform liquid phase growth.

Specific examples will be described below.

When producing a GaAs-GaAzAs laser π, the amount of AI added to the solution meter and Ga is 1.5 m9. 0.3 for active layer solution
It is 2 mg. When a laser wafer is produced by liquid phase epitaxial growth by weighing each time it is grown, the laser oscillation wavelength varies from 804 nm to 822 nm for every 10 wafers, as shown in the figure.
When using the method of the present invention to use a Ga-mul alloy and a solution containing GaAs dissolved therein, the variation in oscillation wavelength becomes as small as 807 to 81 nm per set. The n-type and p-type impurities are S, respectively.
n and Ge were used, and these were weighed and added sequentially. Growth temperature was controlled within 1°C between each loft.

According to the liquid phase growth method using such an alloy, the reproducibility in forming a solution is improved, and workability is also improved. In this example, Ga-A/ alloy was used, but Ga-A
/ -3n and Ga-1-Ge alloys may also be produced.

The alloy solid material produced here does not have to have a completely uniform composition, and may be locally non-uniform.

For example, even if the material is dissolved uniformly at high temperature, when the temperature is lowered to form a solid, the components added in small amounts at the beginning may segregate on the surface. Therefore, in order to increase the uniformity of the solution in the boat used for liquid phase growth, it is desirable that the alloy solid material to be produced has the same shape as the solution reservoir in the boat.

[Brief explanation of drawings]

The figure shows the distribution of oscillation wavelengths of semiconductor lasers fabricated from wafers (Al) and wafers (Bl) on which crystal growth was performed. Name of person Patent attorney Toshio Nakao and 1 other person A
B

Claims (2)

[Claims] (1) Group III elements are dissolved in a binary or multi-component alloy consisting of any one of gallium, indium, gallium-indium, and at least one of aluminum, zinc, tellurium, cadmium, tin, germanium, and silicon. 1. A method for liquid phase growth of m-v group compounds, characterized in that liquid phase growth is carried out using a solution of (2) Solution method in a boat for growing binary or multi-component alloys.